CN113539992A - Insulated gate bipolar transistor terminal - Google Patents
Insulated gate bipolar transistor terminal Download PDFInfo
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- CN113539992A CN113539992A CN202110638932.9A CN202110638932A CN113539992A CN 113539992 A CN113539992 A CN 113539992A CN 202110638932 A CN202110638932 A CN 202110638932A CN 113539992 A CN113539992 A CN 113539992A
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 40
- 229910052742 iron Inorganic materials 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 238000009423 ventilation Methods 0.000 claims 2
- 230000007774 longterm Effects 0.000 abstract description 4
- 238000001125 extrusion Methods 0.000 description 11
- 239000000523 sample Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 210000004907 gland Anatomy 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005382 thermal cycling Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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Abstract
The invention belongs to the technical field of insulated gate bipolar transistors, and particularly relates to an insulated gate bipolar transistor terminal which comprises a shell, an IGBT chip and a radiator; in the prior art, when the insulated gate bipolar transistor terminal passes through an excessive current amount, a large amount of heat is generated inside the insulated gate bipolar transistor terminal, and long-term thermal circulation in work can impact a bonding wire, so that the risk of falling and breaking of the bonding wire exists, and the insulated gate bipolar transistor terminal is caused to generate faults; when the temperature of the IGBT chip is increased, the current of the bonding wire passing through the first thermistor and the second thermistor is gradually increased, so that the electromagnet reaches the working current and starts to work, the heat dissipation block is lowered to be in contact with the bonding wire, and the temperature of the bonding wire is lowered; meanwhile, partial current of the IGBT chip, which is led to the bonding wire, is used for acting by the electromagnet, so that the current passing through the bonding wire is reduced, the current-carrying efficiency of the bonding wire in a circuit is weakened, the generation of heat in the bonding wire is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is maintained.
Description
Technical Field
The invention belongs to the technical field of insulated gate bipolar transistors, and particularly relates to an insulated gate bipolar transistor terminal.
Background
An insulated-Gate Bipolar Transistor (IGBT) integrates the advantages of a Power Transistor (Giant Transistor-GTR) and a Power field effect Transistor (Power MOSFET), has good characteristics and is wide in application field; IGBTs are also three-terminal devices: a gate, a collector and an emitter. An igbt (insulated gate bipolar transistor) is a bipolar device of a MOS structure, and belongs to a power device having high-speed performance of a power MOSFET and bipolar low-resistance performance. The application range of the IGBT is generally in the region of a withstand voltage of 600V or more, a current of 10A or more, and a frequency of 1kHz or more. The present invention is widely used in the fields of industrial motors, small-capacity commercial motors, inverters, stroboscopes for cameras, induction heating (electric) cookers, and the like. The IGBT is roughly classified into two types, one being a three-terminal one-package type of mold resin sealing, according TO the difference in package, and has been formed in series from TO-3P TO small surface mount. The other is a module type in which IGBTs and fwds (fleeweeldiodes) are packaged in pairs (2 or 6 groups), and is mainly used in industry. The types of modules are classified into various shapes and packaging modes according to different purposes, and are serialized.
For example, a chinese patent with application number CN201610688245.7 discloses an IGBT module, including: the IGBT lining plate is mounted on a gland on the IGBT lining plate, a probe mounting hole and a conductive probe penetrate through the gland, the main body of the probe is located in the probe mounting hole, an upper contact and a lower contact extend out of the probe mounting hole, and the lower contact is in contact with the IGBT lining plate. And a locking bulge which is in interference fit with the probe mounting hole is formed on the main body of the probe. In the IGBT module of the invention, the probe is not jointed with the gland by using the easily damaged elastic ring, and the operation of a user is convenient.
However, in the technical scheme, when the insulated gate bipolar transistor terminal passes through an excessive current amount, a large amount of heat is generated inside the insulated gate bipolar transistor terminal, and since different materials have different thermal conductivities and different expansion coefficients, long-term thermal cycling in work can impact a bonding wire, so that the risk of falling off and breaking of the bonding wire exists, and the insulated gate bipolar transistor terminal is caused to generate faults.
Disclosure of Invention
In order to make up for the defects of the prior art, the invention provides the insulated gate bipolar transistor terminal, when the temperature of an IGBT chip is increased, the current of a bonding wire passing through a first thermistor and a second thermistor is gradually increased, so that the electromagnet reaches the working current and starts to work, a radiating block fixedly connected with an iron block is lowered to be in contact with the bonding wire, and the temperature of the bonding wire is lowered under the action of the radiating block; meanwhile, through the work of the electromagnet, part of current of the IGBT chip communicated to the bonding wire is used for the electromagnet to do work, the current passing through the bonding wire is reduced, the current carrying efficiency of the bonding wire in a circuit is weakened, the generation of heat in the bonding wire is reduced, and the work efficiency of the insulated gate bipolar transistor terminal is maintained.
The technical scheme adopted by the invention for solving the technical problems is as follows: the insulated gate bipolar transistor terminal comprises a shell, an IGBT chip and a radiator; the top of the radiator is provided with a shell, the middle of the top of the radiator is fixedly connected with a base, and the top of the base is fixedly connected with an IGBT chip and a copper sheet; the top of the IGBT chip is fixedly connected with a bonding wire, and one end of the bonding wire, which is far away from the IGBT chip, is fixedly connected with a copper sheet; the top of the inner wall of the shell is fixedly connected with a spring, the bottom of the spring is fixedly connected with a heat dissipation block, and the bottom of the heat dissipation block is fixedly connected with an iron block; the heat dissipation block is made of ceramic materials; the base is fixedly connected with a supporting block, and the top of the supporting block is positioned below two sides of the top of the IGBT chip and is positioned at the bottom of the iron block; the top of the supporting block is fixedly connected with an electromagnet; the bonding wire is arranged at one end of the IGBT chip and fixedly connected with a first thermistor, and the bonding wire is arranged at one end of the copper sheet and fixedly connected with a second thermistor; the electromagnet, the first thermistor and the second thermistor are connected in series through a lead;
in the prior art, when the insulated gate bipolar transistor terminal passes through an excessive current amount, a large amount of heat is generated inside the insulated gate bipolar transistor terminal, and because different materials have different heat conductivities and different expansion coefficients, long-term thermal circulation in work can impact a bonding wire, so that the risk of falling and breaking of the bonding wire exists, and the insulated gate bipolar transistor terminal is caused to generate faults;
therefore, when the temperature of the IGBT chip is increased, the radiator cools the shell, the radiator is a radiating fin, the resistance of the first thermistor and the resistance of the second thermistor are gradually reduced through the first thermistor and the second thermistor which are fixedly connected with the bonding wire, the current of the bonding wire passing through the first thermistor and the second thermistor is gradually increased, the electromagnet connected with the wire is connected through the wire to reach the working current to start working, the magnetic force of the electromagnet is gradually increased along with the increase of the current, the magnetic force of the electromagnet does work to attract the iron block to gradually decrease until the electromagnet and the iron block are attracted, the supporting block is used for controlling the height position of the electromagnet, the radiating block fixedly connected with the iron block is lowered to be in contact with the bonding wire, the temperature of the bonding wire is cooled through the action of the radiating block, and the thermal cycle in the terminal working of the insulated gate bipolar transistor is reduced, the impact of thermal cycle on the bonding wire is reduced, the risk of falling and breaking of the bonding wire is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is ensured; meanwhile, through the work of the electromagnet, part of current of the IGBT chip communicated to the bonding wire is used for the electromagnet to do work, so that the current passing through the bonding wire is reduced, the current carrying efficiency of the bonding wire in a circuit is weakened, and the generation of heat in the bonding wire is reduced; when the temperature in the insulated gate bipolar transistor terminal is reduced, the resistances of the first thermistor and the second thermistor are gradually increased, the current of the bonding wire passing through the first thermistor and the second thermistor is gradually reduced, the magnetic force of the electromagnet is gradually reduced until the bonding wire is reduced to a working current, the electromagnet stops working, the iron block is separated, the radiating block is gradually pulled up under the action of the spring, the bonding wire is recovered to work, the current-carrying efficiency of the bonding wire in the insulated gate bipolar transistor terminal is maintained, and the working efficiency of the insulated gate bipolar transistor terminal is maintained.
Preferably, the bottom of the heat dissipation block is provided with a groove, so that when the heat dissipation block descends, the groove is attached to the bonding wire; through the groove arranged at the bottom of the radiating block, when the radiating block is attached to the bonding wire, the contact area of the radiating block and the bonding wire is increased, the radiating efficiency of the radiating block on the bonding wire is further increased, the thermal cycle of the insulated gate bipolar transistor terminal in work is reduced, meanwhile, when the radiating block is attached to the bonding wire, the groove is limited on the bonding wire, the deformation of the radiating block for extruding the bonding wire is reduced, the risk that the bonding wire falls off and is broken is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is ensured.
Preferably, the end part of the heat dissipation block is fixedly connected with a connecting block, and one end of the connecting block, which is far away from the heat dissipation block, is in sliding contact with the shell; the connecting block is made of ceramic materials; through the connecting block that the radiating block tip links firmly, make the absorbing heat of radiating block pass through the leading-in shell of connecting block, through the leading-in radiator of the heat in with the connecting block of shell, further increase the radiating efficiency of radiating block to the bonding wire, reduce the thermal cycle in the work of insulated gate bipolar transistor terminal, reduce the impact of thermal cycle to the bonding wire, reduce the bonding wire and drop, cracked risk, guaranteed the work efficiency at insulated gate bipolar transistor terminal.
Preferably, one end of the heat dissipation block, which faces the copper sheet, is fixedly connected with an extrusion block, and the extrusion block is made of a ceramic material; through the extrusion block that links firmly on the radiating block, make the radiating block when descending for extrusion block and bonding wire laminating, with the leading-in extrusion block of the heat in the bonding wire, increase the heat radiating area of bonding wire, further increase the radiating efficiency of radiating block to the bonding wire, reduce the thermal cycle in the work of insulated gate bipolar transistor terminal, reduce the impact of thermal cycle to the bonding wire, reduce bonding wire and drop, cracked risk, guaranteed the work efficiency at insulated gate bipolar transistor terminal.
Preferably, the shell is provided with a group of vent holes, and the inner walls of the vent holes are fixedly connected with a filter screen; the hot air in the insulated gate bipolar transistor terminal is discharged to the outside of the insulated gate bipolar transistor terminal through the filter screen fixedly connected with the inner wall of the vent hole, so that the temperature in the insulated gate bipolar transistor terminal is reduced, the thermal cycle of the insulated gate bipolar transistor terminal in work is reduced, the impact of the thermal cycle on a bonding wire is reduced, the risk of falling and breaking of the bonding wire is reduced, the work efficiency of the insulated gate bipolar transistor terminal is ensured, meanwhile, the filter screen arranged in the vent hole is used for preventing dust in the air from entering the insulated gate bipolar transistor terminal in the air circulation process, the operation of internal components of the insulated gate bipolar transistor terminal is influenced, and the work efficiency of the insulated gate bipolar transistor terminal is maintained.
Preferably, the bottom of the shell is fixedly connected with a group of first positioning blocks; the top of the radiator is fixedly connected with a group of second positioning blocks; the first positioning block and the second positioning block are connected through a screw; when the insulated gate bipolar transistor terminal has a fault, the screw rod is rotated to separate the screw rod from the first positioning block and the second positioning block, so that the shell is separated from the radiator; after the overhaul is finished, the shell is connected with the radiator by rotating the screw, so that the overhaul of the insulated gate bipolar transistor terminal is facilitated for workers, namely, the firm connection degree of the shell and the radiator is increased, the heat conduction efficiency between the shell and the radiator is increased, and the working efficiency of the workers is increased.
The invention has the following beneficial effects:
1. according to the insulated gate bipolar transistor terminal, when the temperature of an IGBT chip is increased, the current of a bonding wire passing through a first thermistor and a second thermistor is gradually increased, so that the electromagnet reaches the working current and starts to work, a radiating block fixedly connected with an iron block is lowered to be in contact with the bonding wire, and the temperature of the bonding wire is lowered under the action of the radiating block; meanwhile, through the work of the electromagnet, part of current of the IGBT chip communicated to the bonding wire is used for the electromagnet to do work, the current passing through the bonding wire is reduced, the current carrying efficiency of the bonding wire in a circuit is weakened, the generation of heat in the bonding wire is reduced, and the work efficiency of the insulated gate bipolar transistor terminal is maintained.
2. According to the insulated gate bipolar transistor terminal, the groove is formed in the bottom of the radiating block, so that when the radiating block is attached to the bonding wire, the contact area between the radiating block and the bonding wire is increased, the radiating efficiency of the radiating block on the bonding wire is further increased, the thermal cycle of the insulated gate bipolar transistor terminal in working is reduced, the impact of the thermal cycle on the bonding wire is reduced, the risk of falling and breaking of the bonding wire is reduced, the working efficiency of the insulated gate bipolar transistor terminal is ensured, meanwhile, when the radiating block is attached to the bonding wire, the groove limits the bonding wire, the deformation of the bonding wire is reduced, the risk of falling and breaking of the bonding wire is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is ensured.
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a perspective view of the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is an enlarged view of a portion of FIG. 1 at B;
FIG. 4 is an enlarged view of a portion of FIG. 1 at C;
in the figure: 1. a housing; 11. an IGBT chip; 12. a heat sink; 13. a base; 14. a copper sheet; 15. a bonding wire; 16. a spring; 17. a heat dissipating block; 18. an iron block; 19. a support block; 110. an electromagnet; 111. a first thermistor; 112. a second thermistor; 113. a wire; 2. a groove; 3. connecting blocks; 4. extruding the block; 5. a vent hole; 51. a filter screen; 6. a first positioning block; 61. a second positioning block; 62. a screw.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1 to 4, an insulated gate bipolar transistor terminal according to the present invention includes a case 1, an IGBT chip 11, and a heat sink 12; the top of the radiator 12 is provided with a shell 1, the middle of the top of the radiator 12 is fixedly connected with a base 13, and the top of the base 13 is fixedly connected with an IGBT chip 11 and a copper sheet 14; the top of the IGBT chip 11 is fixedly connected with a bonding wire 15, and one end, far away from the IGBT chip 11, of the bonding wire 15 is fixedly connected with the copper sheet 14; the top of the inner wall of the shell 1 is fixedly connected with a spring 16, the bottom of the spring 16 is fixedly connected with a heat dissipation block 17, and the bottom of the heat dissipation block 17 is fixedly connected with an iron block 18; the heat dissipation block 17 is made of ceramic material; the base 13 is fixedly connected with a supporting block 19, and the top of the supporting block 19 is positioned below two sides of the top of the IGBT chip 11 and is positioned at the bottom of the iron block 18; the top of the supporting block 19 is fixedly connected with an electromagnet 110; the bonding wire 15 is arranged at one end of the IGBT chip 11 and fixedly connected with a first thermistor 111, and the bonding wire 15 is arranged at one end of the copper sheet 14 and fixedly connected with a second thermistor 112; the electromagnet 110, the first thermistor 111 and the second thermistor 112 are connected in series through a lead 113;
in the prior art, when the insulated gate bipolar transistor terminal passes through an excessive current amount, a large amount of heat is generated inside the insulated gate bipolar transistor terminal, and due to different materials with different thermal conductivities and different expansion coefficients, long-term thermal cycling in work can impact the bonding wire 15, so that the risk of falling and breaking of the bonding wire 15 exists, and the insulated gate bipolar transistor terminal is caused to generate faults.
Therefore, when the temperature of the IGBT chip 11 increases, the heat sink 12 cools the housing 1, the heat sink 12 is a heat dissipation fin, the resistances of the first thermistor 111 and the second thermistor 112 are gradually decreased through the first thermistor 111 and the second thermistor 112 fixedly connected to the bonding wire 15, so that the current of the bonding wire 15 passing through the first thermistor 111 and the second thermistor 112 is gradually increased, the electromagnet 110 connected to the wire 113 is connected to the wire 113 through the wire 113, the working current of the electromagnet is reached, the magnetic force of the electromagnet gradually increases with the increase of the current, the magnetic force of the electromagnet 110 works to attract the iron block 18 to gradually decrease until the electromagnet 110 and the iron block 18 are attracted, the supporting block 19 is used for controlling the height position of the electromagnet 110, so that the heat dissipation block 17 fixedly connected to the iron block 18 is lowered to be in contact with the bonding wire 15, and under the action of the heat dissipation block 17, the temperature of the bonding wire 15 is reduced, so that the thermal cycle in the operation of the insulated gate bipolar transistor terminal is reduced, the impact of the thermal cycle on the bonding wire 15 is reduced, the risk of falling and breaking of the bonding wire 15 is reduced, and the working efficiency of the insulated gate bipolar transistor terminal is ensured; meanwhile, through the work of the electromagnet 110, part of current of the IGBT chip 11 led to the bonding wire 15 is used for the electromagnet 110 to do work, so that the current passing through the bonding wire 15 is reduced, the current-carrying efficiency of the bonding wire 15 in a circuit is weakened, and the generation of heat in the bonding wire 15 is reduced; when the temperature in the insulated gate bipolar transistor terminal is reduced, the resistances of the first thermistor 111 and the second thermistor 112 are gradually increased, the current of the bonding wire 15 passing through the first thermistor 111 and the second thermistor 112 is gradually reduced, the magnetic force of the electromagnet 110 is gradually reduced until the bonding wire is reduced to the working current, the electromagnet block 18 is separated, the radiating block 17 is gradually pulled up under the action of the spring 16 by the radiating block 17, the bonding wire 15 is recovered to work, the current-carrying efficiency of the bonding wire 15 in the insulated gate bipolar transistor terminal is maintained, and the working efficiency of the insulated gate bipolar transistor terminal is maintained.
As an embodiment of the present invention, a groove 2 is disposed at the bottom of the heat dissipation block 17, so that when the heat dissipation block 17 is lowered, the groove 2 is attached to the bonding wire 15; through the recess 2 that radiating block 17 bottom set up, when making radiating block 17 laminate with bonding wire 15, increase the area of contact of radiating block 17 and bonding wire 15, further increase the radiating efficiency of radiating block 17 to bonding wire 15, reduce the thermal cycle in the work of IGBT terminal, reduce the impact of thermal cycle to bonding wire 15, simultaneously when radiating block 17 laminates with bonding wire 15, make recess 2 carry on spacingly to bonding wire 15, reduce the deformation that radiating block 17 extrudeed bonding wire 15, reduce bonding wire 15 and drop, cracked risk, the work efficiency at IGBT terminal has been guaranteed.
As an embodiment of the invention, the end of the heat dissipation block 17 is fixedly connected with a connection block 3, and one end of the connection block 3, which is far away from the heat dissipation block 17, is in sliding contact with the housing 1; the connecting block 3 is made of ceramic materials; through connecting block 3 that the radiating block 17 tip links firmly, make the absorptive heat of radiating block 17 pass through in the leading-in shell 1 of connecting block 3, through in the shell 1 with the leading-in radiator 12 of heat in the connecting block 3, further increase radiating block 17 is to the radiating efficiency of bonding wire 15, reduce the thermal cycle in the work of insulated gate bipolar transistor terminal, reduce the impact of thermal cycle to bonding wire 15, reduce bonding wire 15 and drop, cracked risk, guaranteed the work efficiency at insulated gate bipolar transistor terminal.
As an embodiment of the invention, one end of the heat dissipation block 17 facing the copper sheet 14 is fixedly connected with a pressing block 4, and the pressing block 4 is made of a ceramic material; through the extrusion block 4 that links firmly on the radiating block 17, make the radiating block 17 when descending, make extrusion block 4 and bonding wire 15 laminate, with the leading-in extrusion block 4 of the heat in the bonding wire 15, increase the heat radiating area of bonding wire 15, further increase radiating block 17 is to the radiating efficiency of bonding wire 15, reduce the thermal cycle in the work of insulated gate bipolar transistor terminal, reduce the impact of thermal cycle to bonding wire 15, reduce bonding wire 15 and drop, cracked risk, the work efficiency at insulated gate bipolar transistor terminal has been guaranteed.
As an embodiment of the invention, a group of vent holes 5 are arranged on the housing 1, and the inner walls of the vent holes 5 are fixedly connected with a filter screen 51; the hot air in the insulated gate bipolar transistor terminal is discharged to the outside of the insulated gate bipolar transistor terminal through the filter screen 51 fixedly connected with the inner wall of the vent hole 5 in a convection manner of the vent hole 5, so that the temperature in the insulated gate bipolar transistor terminal is reduced, the thermal cycle in the operation of the insulated gate bipolar transistor terminal is reduced, the impact of the thermal cycle on the bonding wire 15 is reduced, the risk of falling and breaking of the bonding wire 15 is reduced, the working efficiency of the insulated gate bipolar transistor terminal is ensured, and meanwhile, the filter screen 51 arranged in the vent hole 5 prevents dust in the air from entering the inside of the insulated gate bipolar transistor terminal in the air circulation process, so that the operation of internal components of the insulated gate bipolar transistor terminal is influenced, and the working efficiency of the insulated gate bipolar transistor terminal is maintained.
As an embodiment of the invention, the bottom of the shell 1 is fixedly connected with a group of first positioning blocks 6; the top of the radiator 12 is fixedly connected with a group of second positioning blocks 61; the first positioning block 6 is connected with the second positioning block 61 through a screw 62; when the insulated gate bipolar transistor terminal fails, the screw 62 is separated from the first positioning block 6 and the second positioning block 61 by rotating the screw 62, so that the shell 1 is separated from the heat sink 12; after the overhaul is finished, the shell 1 is connected with the radiator 12 by rotating the screw rod 62, so that the overhaul of the insulated gate bipolar transistor terminal is facilitated for workers, namely, the firm connection degree of the shell 1 and the radiator 12 is increased, the heat conduction efficiency between the shell 1 and the radiator 12 is increased, and the working efficiency of the workers is increased.
The specific working process is as follows:
when the temperature of the IGBT chip 11 increases, the resistances of the first thermistor 111 and the second thermistor 112 are gradually reduced through the first thermistor 111 and the second thermistor 112 fixedly connected with the bonding wire 15, so that the current of the bonding wire 15 through the first thermistor 111 and the second thermistor 112 is gradually increased, the bonding wire 15 is connected through the wire 113, the electromagnet 110 connected with the wire 113 reaches the working current to start working, the magnetic force of the electromagnet is gradually increased along with the increase of the current, the magnetic force of the electromagnet 110 works to attract the iron block 18 to gradually decrease until the electromagnet 110 and the iron block 18 are attracted, the support block 19 controls the position of the electromagnet 110, the heat dissipation block 17 fixedly connected with the iron block 18 is lowered to be in contact with the bonding wire 15, and the temperature of the bonding wire 15 is lowered through the action of the heat dissipation block 17; meanwhile, through the work of the electromagnet 110, part of current of the IGBT chip 11 led to the bonding wire 15 is used for the electromagnet 110 to do work, so that the current passing through the bonding wire 15 is reduced, and the current carrying efficiency of the bonding wire 15 in a circuit is weakened; when the temperature in the insulated gate bipolar transistor terminal is reduced, the resistances of the first thermistor 111 and the second thermistor 112 are gradually increased, so that the current of the bonding wire 15 passing through the first thermistor 111 and the second thermistor 112 is gradually reduced, the magnetic force of the electromagnet 110 is gradually reduced, the operation is stopped until the current is reduced to be lower than the operating current, the iron block 18 is separated, the radiating block 17 is gradually pulled up under the action of the spring 16, and the bonding wire 15 is recovered to operate; through the groove 2 arranged at the bottom of the radiating block 17, when the radiating block 17 is attached to the bonding wire 15, the contact area between the radiating block 17 and the bonding wire 15 is increased, and the radiating efficiency of the radiating block 17 on the bonding wire 15 is further increased; meanwhile, when the radiating block 17 is attached to the bonding wire 15, the groove 2 limits the bonding wire 15, and deformation of the radiating block 17 extruding the bonding wire 15 is reduced; the connecting block 3 is fixedly connected with the end of the radiating block 17, so that heat absorbed by the radiating block 17 is guided into the shell 1 through the connecting block 3, and the heat in the connecting block 3 is guided into the radiator 12 through the shell 1, and the radiating efficiency of the radiating block 17 on the bonding wire 15 is further increased; through the extrusion block 4 fixedly connected to the heat dissipation block 17, when the heat dissipation block 17 descends, the extrusion block 4 is attached to the bonding wire 15, heat in the bonding wire 15 is guided into the extrusion block 4, the heat dissipation area of the bonding wire 15 is increased, and the heat dissipation efficiency of the heat dissipation block 17 on the bonding wire 15 is further increased; hot air in the insulated gate bipolar transistor terminal is discharged to the outside of the insulated gate bipolar transistor terminal through the filter screen 51 fixedly connected with the inner wall of the vent hole 5 in a convection manner of the vent hole 5, so that the temperature in the insulated gate bipolar transistor terminal is reduced, and meanwhile, dust in the air is prevented from entering the inside of the insulated gate bipolar transistor terminal in the air circulation process through the filter screen 51 arranged in the vent hole 5, so that the operation of internal components of the insulated gate bipolar transistor terminal is influenced, and the working efficiency of the insulated gate bipolar transistor terminal is maintained; when the insulated gate bipolar transistor terminal fails, the screw 62 is separated from the first positioning block 6 and the second positioning block 61 by rotating the screw 62, so that the shell 1 is separated from the heat sink 12; after the overhaul is finished, the shell 1 is connected with the radiator 12 by rotating the screw rod 62, so that the insulated gate bipolar transistor terminal is convenient for workers to overhaul, namely the firm connection degree of the shell 1 and the radiator 12 is increased, and the working efficiency of the workers is increased.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience in describing the present invention and for simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the scope of the present invention.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. An insulated gate bipolar transistor terminal, comprising: the IGBT device comprises a shell (1), an IGBT chip (11) and a radiator (12); the top of the radiator (12) is provided with a shell (1), the middle of the top of the radiator (12) is fixedly connected with a base (13), and the top of the base (13) is fixedly connected with an IGBT chip (11) and a copper sheet (14); the top of the IGBT chip (11) is fixedly connected with a bonding wire (15), and one end, far away from the IGBT chip (11), of the bonding wire (15) is fixedly connected with a copper sheet (14); the top of the inner wall of the shell (1) is fixedly connected with a spring (16), the bottom of the spring (16) is fixedly connected with a heat dissipation block (17), and the bottom of the heat dissipation block (17) is fixedly connected with an iron block (18); the heat dissipation block (17) is made of ceramic materials; the base (13) is fixedly connected with a supporting block (19), and the top of the supporting block (19) is positioned below two sides of the top of the IGBT chip (11) and is positioned at the bottom of the iron block (18); the top of the supporting block (19) is fixedly connected with an electromagnet (110); one end of the bonding wire (15) arranged on the IGBT chip (11) is fixedly connected with a first thermistor (111), and one end of the bonding wire (15) arranged on the copper sheet (14) is fixedly connected with a second thermistor (112); the electromagnet (110), the first thermistor (111) and the second thermistor (112) are connected in series through a lead (113).
2. The insulated gate bipolar transistor terminal of claim 1, wherein: the bottom of the heat dissipation block (17) is provided with a groove (2), so that when the heat dissipation block (17) descends, the groove (2) is attached to the bonding wire (15).
3. The insulated gate bipolar transistor terminal of claim 2, wherein: the end part of the heat dissipation block (17) is fixedly connected with a connecting block (3), and one end, far away from the heat dissipation block (17), of the connecting block (3) is in sliding contact with the shell (1); the connecting block (3) is made of ceramic materials.
4. An insulated gate bipolar transistor termination according to claim 3 wherein: one end of the heat dissipation block (17) facing the copper sheet (14) is fixedly connected with a squeezing block (4), and the squeezing block (4) is made of ceramic materials.
5. The insulated gate bipolar transistor terminal of claim 1, wherein: a group of ventilation holes (5) are formed in the shell (1), and a filter screen (51) is fixedly connected to the inner wall of each ventilation hole (5).
6. The insulated gate bipolar transistor terminal of claim 5, wherein: the bottom of the shell (1) is fixedly connected with a group of first positioning blocks (6); the top of the radiator (12) is fixedly connected with a group of second positioning blocks (61); the first positioning block (6) is connected with the second positioning block (61) through a screw (62).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110638932.9A CN113539992A (en) | 2021-06-08 | 2021-06-08 | Insulated gate bipolar transistor terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110638932.9A CN113539992A (en) | 2021-06-08 | 2021-06-08 | Insulated gate bipolar transistor terminal |
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| CN113539992A true CN113539992A (en) | 2021-10-22 |
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| CN202110638932.9A Pending CN113539992A (en) | 2021-06-08 | 2021-06-08 | Insulated gate bipolar transistor terminal |
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| US20100254426A1 (en) * | 2009-03-27 | 2010-10-07 | Fujitsu Limited | Heat sink for measuring temperature of electronic component |
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| CN110954237A (en) * | 2019-11-22 | 2020-04-03 | 奇瑞汽车股份有限公司 | Engine coolant temperature sensor and vehicle |
| CN112863557A (en) * | 2021-03-03 | 2021-05-28 | 宿州吾君信息服务有限公司 | Convenient mounting, dismounting and automatic heat dissipation device for data encryption hard disk |
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2021
- 2021-06-08 CN CN202110638932.9A patent/CN113539992A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100254426A1 (en) * | 2009-03-27 | 2010-10-07 | Fujitsu Limited | Heat sink for measuring temperature of electronic component |
| CN103365317A (en) * | 2013-07-31 | 2013-10-23 | 成都电业局双流供电局 | Transformer with automatic heat dissipation function |
| CN105974969A (en) * | 2016-06-28 | 2016-09-28 | 成都科创城科技有限公司 | Temperature control flow valve for intelligent household electrical appliance water cooling heat radiation system |
| CN110954237A (en) * | 2019-11-22 | 2020-04-03 | 奇瑞汽车股份有限公司 | Engine coolant temperature sensor and vehicle |
| CN112863557A (en) * | 2021-03-03 | 2021-05-28 | 宿州吾君信息服务有限公司 | Convenient mounting, dismounting and automatic heat dissipation device for data encryption hard disk |
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