CN113517363A - Infrared photoelectric detector and manufacturing method thereof - Google Patents

Infrared photoelectric detector and manufacturing method thereof Download PDF

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CN113517363A
CN113517363A CN202110548026.XA CN202110548026A CN113517363A CN 113517363 A CN113517363 A CN 113517363A CN 202110548026 A CN202110548026 A CN 202110548026A CN 113517363 A CN113517363 A CN 113517363A
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nanowires
nanowire
substrate layer
electrode
metal wire
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CN113517363B (en
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王利明
张蓓
胡辉勇
张一驰
张宁宁
孙浩
韩钊
苑西西
舒斌
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Xidian University
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract

The invention discloses an infrared photoelectric detector, which relates to the technical field of photoelectricity, and comprises an intrinsic substrate layer, a nanowire, a metal wire and an electrode, wherein the nanowire, the metal wire and the electrode are positioned on one side of the intrinsic substrate layer; meanwhile, the introduction of the metal wire structure and the nanowire structure can effectively improve the responsivity of the photoelectric detector in an infrared communication band, and widen the detection range of the photoelectric detector. In addition, the nanowire includes many first nanowires and many second nanowires, and many first nanowires are perpendicular with many second nanowires, and this kind of design can make infrared photoelectric detector be symmetrical structure, and when incident light changed between 0 to 360, infrared photoelectric detector's light absorption performance did not basically change, has guaranteed infrared photoelectric detector's reliability.

Description

Infrared photoelectric detector and manufacturing method thereof
Technical Field
The invention belongs to the technical field of photoelectricity, and particularly relates to an infrared photoelectric detector and a manufacturing method thereof.
Background
Short wave infrared photoelectric detectors attract more and more attention due to their wide application prospects in the fields of optical fiber communication, on-chip optical interconnection, remote sensing and the like. Group IV materials have characteristics that are compatible with standard Complementary Metal Oxide Semiconductor (CMOS) processes and thus dominate the many infrared detector material competitions. However, for the traditional Si and Ge materials, the cut-off wavelengths of the optical detection are respectively 1100nm and 1600nm, no response or very low response is generated at 1550nm of the infrared communication window which is most widely applied, and the response is almost zero at the infrared band with longer wavelength.
For this reason, infrared photodetectors based on group IV GeSn alloy materials have come into force. In the related art, Sn is doped into Ge lattices to form a GeSn alloy, the GeSn alloy can be converted into a direct band gap material with a proper Sn component, and the band gap of the GeSn alloy is continuously reduced with the increase of the Sn component, which is helpful for improving light absorption and expanding the photoresponse cutoff wavelength of the material.
However, the problems of insufficient responsivity, poor signal-to-noise ratio and the like of the GeSn infrared photoelectric detector still stand out, so that the GeSn infrared photoelectric detector cannot meet the detection requirement of an infrared communication waveband. Therefore, how to enhance the detection efficiency of the GeSn infrared photoelectric detector in the infrared communication band is a technical problem to be solved urgently at present on the basis of ensuring the process feasibility and controlling the manufacturing cost.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides an infrared photodetector and a method for manufacturing the same. The technical problem to be solved by the invention is realized by the following technical scheme:
in a first aspect, the present invention provides an infrared photodetector comprising:
an intrinsic substrate layer;
the nanowire, the metal wire and the electrode are positioned on one side of the intrinsic substrate layer;
the nanowires comprise a plurality of first nanowires and a plurality of second nanowires perpendicular to the first nanowires, the first nanowires and the second nanowires are intersected to form a plurality of unit cells, and the intrinsic substrate layer and the nanowires comprise germanium tin materials;
the metal wire is positioned in the unit cell; the metal wires comprise a first metal wire and a second metal wire, the extending direction of the first metal wire is the same as that of the first nanowire, and the extending direction of the second metal wire is the same as that of the second nanowire;
the electrodes comprise a first electrode and a second electrode; in the extending direction of the second nanowires, two first nanowires farthest away are respectively in contact with the first electrode and the second electrode, or in the extending direction of the first nanowires, two second nanowires farthest away are respectively in contact with the first electrode and the second electrode.
In one embodiment of the present invention, the number of the first nanowires is the same as the number of the second nanowires, and each of the unit cells includes two first metal lines and two second metal lines.
In one embodiment of the present invention, the metal line is made of a material including at least one of gold and silver.
In one embodiment of the invention, the duty cycles of the nanowires and the metal lines are equal.
In one embodiment of the present invention, the duty cycles of the nanowires and the metal lines are both 1/8.
In one embodiment of the invention, the unit cell is a square, and the side length of the square is 0.3 μm;
and the height of the nanowire is 0.3 mu m and the height of the metal wire is 115.3nm along the direction vertical to the plane of the intrinsic substrate layer.
In one embodiment of the present invention, the electrode is made of a material including at least one of gold, silver, and aluminum.
In one embodiment of the present invention, the tin component in the germanium tin material is 1% to 10%.
In a second aspect, the present invention provides a method for manufacturing an infrared photodetector, including:
providing an intrinsic substrate layer, wherein the intrinsic substrate layer comprises germanium tin material;
coating polymethyl methacrylate with a preset thickness on the surface of the intrinsic substrate layer, and heating according to a preset temperature and a preset time length;
exposing the polymethyl methacrylate on the surface of the intrinsic substrate layer by using an electron beam, and developing and fixing the exposed polymethyl methacrylate;
in an etching mask machine, performing chlorine-based plasma reactive ion etching by using an etching mask to form a nanowire, rinsing the nanowire in isopropanol, and drying the nanowire in compressed nitrogen;
coating polymethyl methacrylate with a preset thickness on the surface of the nanowire, heating according to a preset temperature and a preset time, performing electron beam exposure, and developing and fixing the exposed polymethyl methacrylate;
sequentially depositing a chromium film with the thickness of 2nm and a gold film with the thickness of 100nm on the surface of the intrinsic substrate layer by using an electron beam evaporation system to form a metal wire;
and removing impurities in the acetone to obtain the finished infrared photoelectric detector.
Compared with the prior art, the invention has the beneficial effects that:
(1) the infrared photoelectric detector provided by the invention comprises an intrinsic substrate layer, and a nanowire, a metal wire and an electrode which are positioned on one side of the intrinsic substrate layer, wherein the intrinsic substrate layer and the nanowire both comprise germanium tin materials, so that the intrinsic absorption of semiconductor materials is enhanced, and the photoresponse cutoff wavelength of the intermediate infrared detector can be expanded; meanwhile, the introduction of the nanowire structure can effectively improve the responsivity of the photoelectric detector in an infrared communication band and widen the detection range of the photoelectric detector.
(2) In the infrared photoelectric detector provided by the invention, the nanowires comprise a plurality of first nanowires and a plurality of second nanowires, and the plurality of first nanowires are perpendicular to the plurality of second nanowires.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an infrared photodetector provided in an embodiment of the present invention;
fig. 2 is a top view of an infrared photodetector provided by an embodiment of the present invention;
fig. 3 is another top view of an infrared photodetector provided by an embodiment of the present invention;
FIG. 4 is a comparison graph of a light absorption spectrum of an infrared photodetector provided by an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating the relationship between the absorption rate of the nanowires and the polarization of the light source in the infrared photodetector provided by the embodiment of the invention;
fig. 6 is a schematic flow chart of a method for manufacturing an infrared photodetector according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Fig. 1 is a schematic structural diagram of an infrared photodetector provided in an embodiment of the present invention, and fig. 2 and fig. 3 are top views of the infrared photodetector provided in the embodiment of the present invention. Referring to fig. 1-3, an infrared photodetector 100 provided in an embodiment of the present invention includes:
an intrinsic substrate layer 10;
a nanowire 20, a metal line 30 and an electrode 40 at one side of the intrinsic substrate layer 10;
the nanowire 20 comprises a plurality of first nanowires 201 and a plurality of second nanowires 202 perpendicular to the first nanowires 201, the first nanowires 201 and the second nanowires 202 are intersected to form a plurality of unit cells 203, and the intrinsic substrate layer 10 and the nanowires 20 comprise germanium tin materials;
the metal lines 30 are located within the unit cells 203; the metal line 30 includes a first metal line 301 and a second metal line 302, the first metal line 301 and the first nanowire 201 extend in the same direction, and the second metal line 302 and the second nanowire 202 extend in the same direction;
the electrode 40 comprises a first electrode 401 and a second electrode 402, and the electrode 40 is made of at least one of gold, silver and aluminum; in the extending direction of the second nanowires 202, the two first nanowires 201 farthest away are respectively in contact with the first electrode 401 and the second electrode 402, or in the extending direction of the first nanowires 201, the two second nanowires 202 farthest away are respectively in contact with the first electrode 401 and the second electrode 402.
In the present embodiment, the infrared photodetector 100 includes an intrinsic substrate layer 10, and a nanowire 20, a metal line 30 and an electrode 40 located on one side of the intrinsic substrate layer 10, wherein the nanowire 20 includes a plurality of first nanowires 201 and a plurality of second nanowires 202, and the first nanowires 201 and the second nanowires 202 are perpendicular to each other. It should be understood that, as shown in fig. 2, designing the first nanowire 201 and the second nanowire 202 vertically enables the infrared photodetector 100 to have a symmetrical structure in the first direction x, the second direction y, and the third direction z, respectively. Thus, when the polarization angle of the incident light is changed between 0 and 360 degrees, the light absorption performance of the infrared photoelectric detector 100 is not changed basically, i.e. the infrared photoelectric detector is insensitive to the polarization of the light source, which is beneficial to ensuring the reliability of the infrared photoelectric detector 100.
It should be noted that the first direction x is an extending direction of the first nanowire 201, the second direction y is an extending direction of the second nanowire 202, and the third direction z is a diagonal direction of the intrinsic substrate layer 10.
Optionally, the intrinsic substrate layer 10 and the nanowire 20 include germanium-tin materials, that is, the infrared photodetector 100 provided in this embodiment uses germanium-tin as a main preparation material, and compared with the conventional VI-group silicon and germanium materials, the application of the germanium-tin alloy material extends the photoresponse cut-off wavelength of the infrared photodetector 100 to the wavelength of 2000nm or even longer, so that the intrinsic absorption coefficient is higher; in addition, the introduction of the nanowire 20 structure can also improve the responsivity of the infrared photodetector 100 in the infrared communication band, thereby widening the detection range of the infrared photodetector 100.
Further, the infrared photodetector 100 further includes a first electrode 401 and a second electrode 402, and exemplarily, as shown in fig. 3, in the extending direction of the second nanowire 202, two first nanowires 201 farthest away are respectively in contact with the first electrode 401 and the second electrode 402, so as to supply power to the infrared photodetector 100 through the first electrode 401 and the second electrode 402. Of course, in some other embodiments of the present invention, the first electrode 401 and the second electrode 402 may be arranged in other manners; for example, referring to fig. 2, in the extending direction of the first nanowire 201, two second nanowires 202 which are farthest away are respectively in contact with the first electrode 401 and the second electrode 402.
With reference to fig. 1-3, the first nanowires 201 and the second nanowires 202 intersect to form a plurality of unit cells 203, each unit cell 203 has a metal line 30 disposed therein, the metal line 30 includes a first metal line 301 and a second metal line 302, the first metal line 301 and the first nanowires 201 extend in the same direction, the second metal line 302 and the second nanowires 202 extend in the same direction, that is, the first metal line 301 and the second metal line 302 are perpendicular to each other. In this embodiment, the metal wire 30 is used to generate plasmon resonance, and since the plasmon resonance is related to the light absorption capability of the infrared photodetector 100, after the metal wire 30 is disposed, the infrared photodetector 100 may have two light absorption mechanisms, which are: intrinsic absorption of the germanium tin material and hot electron absorption of electrons inside the metal line 30, thereby significantly enhancing the light absorption capability of the infrared photodetector 100 and ensuring the reliability thereof.
Optionally, the number of the first nanowires 201 is the same as that of the second nanowires 202, and each unit cell 203 includes two first metal lines 301 and two second metal lines 302.
In this embodiment, the number of the first metal lines 301 and the number of the second metal lines 302 on one side of the intrinsic substrate layer 10 are the same, optionally, the distance between any two adjacent second nanowires 202 is equal in the extending direction of the first nanowires 201, the distance between any two adjacent first nanowires 201 is equal in the extending direction of the second nanowires 202, and each unit cell 203 includes two first metal lines 301 and two second metal lines 302. This design makes the infrared photodetector 100 have a highly symmetrical structure, and even if the polarization angle of the incident light changes between 0 and 360 °, the infrared photodetector 100 also has the characteristic of being insensitive to the polarization of the light source. On the other hand, the metal lines 30 in the unit cells 203 can generate plasmon resonance, and the two first metal lines 301 and the two second metal lines 302 are arranged in each unit cell 203, so that the number of positions where the plasmon resonance is generated is increased, and the light absorption capability of the infrared photodetector 100 is further improved.
It should be noted that the number of the metal lines 30 in each cell 203 should be flexibly adjusted according to the actual situation, for example, each cell 203 may include three first metal lines 301 and three second metal lines 302, which is not limited in this application.
In this embodiment, the tin component in the germanium tin material is 1% to 10%.
Generally, the higher the tin component in the tin-germanium material, the longer the photoresponse cutoff wavelength of infrared photodetector 100, but due to process limitations, too high a tin component is difficult to achieve at the time of fabrication. Therefore, in the present embodiment, the tin component in the germanium-tin material is set to 1% to 10%, on one hand, the too low tin component can be avoided to reduce the photoresponse cutoff wavelength, and on the other hand, the photoresponse cutoff wavelength can be improved to the greatest extent on the basis of feasible preparation process, so that the photoresponse cutoff wavelength of the infrared photodetector 100 is extended to more than 2000 nm.
In this embodiment, the metal line 30 is made of at least one of gold and silver.
Optionally, the duty cycles of the nanowires 20 and the metal lines 30 are equal. For example, the duty cycles of the nanowires 20 and the metal lines 30 are both 1/8.
Where the duty cycle refers to the ratio of the width of the nanowire 20 or the metal wire 30 to the cell side length within each cell 203.
In this embodiment, the unit cell 203 is a square, and the side length of the square is 0.3 μm;
the height of the nanowire 20 is 0.3 μm and the height of the metal line 30 is 115.3nm in a direction perpendicular to the plane of the intrinsic substrate layer 10.
It is understood that, in order to make the resonance wavelength (plasmon enhancement wavelength) of the nanowire 20 structure a target wavelength, it is necessary to set the side length of the unit cell 203, the height of the nanowire 20, and the height of the metal wire 30 according to the target wavelength. Fig. 4 is a comparison graph of a light absorption spectrum of the infrared photodetector 100 provided by the embodiment of the present invention, in which the horizontal axis represents a plasmon enhancement wavelength and the vertical axis represents a light absorption rate. Taking an example that the target wavelength is 2 μm, when the side length of the unit cell 203 is set to be 0.3 μm, the height of the nanowire 20 is 0.3 μm, and the height of the metal wire 30 is 115.3nm, the light absorption spectrum of the infrared photodetector 100 is shown as curve 1 in fig. 4, and it is obvious that compared with the germanium-tin planar structure (curve 2) and the germanium-tin structure provided with the nanowire 20 (curve 3), the structure in the present embodiment has a sharp absorption peak at 2 μm, and the corresponding absorption rate can approach 100%. Obviously, the infrared photodetector 100 provided by the present invention can obtain an ultra-high absorption rate at a specific wavelength by reasonable parametric design.
Fig. 5 is a schematic diagram illustrating a relationship between an absorption rate of a nanowire and a polarization of a light source in an infrared photodetector according to an embodiment of the present invention. On the basis of realizing the ultra-high absorptivity of 2 μm, the high symmetry of the structure of the present embodiment makes the absorption rate of the structure under the irradiation of incident light with different polarization angles not to be changed, i.e. insensitive to the polarization of the light source, as shown in fig. 5, for the structure with the plasma enhanced wavelength of 2 μm, the light absorption of the structure is always close to 1 in the process of the change of the polarization angle of the incident light from 0 ° to 360 °.
The beneficial effects of the invention are that:
(1) the infrared photoelectric detector provided by the invention comprises an intrinsic substrate layer, and a nanowire, a metal wire and an electrode which are positioned on one side of the intrinsic substrate layer, wherein the intrinsic substrate layer and the nanowire both comprise germanium tin materials, so that the intrinsic absorption of semiconductor materials is enhanced, and the photoresponse cutoff wavelength of the intermediate infrared detector can be expanded; meanwhile, the introduction of the metal wire structure and the nanowire structure can effectively improve the responsivity of the photoelectric detector in an infrared communication band, and widen the detection range of the photoelectric detector.
(2) In the infrared photoelectric detector provided by the invention, the nanowires comprise a plurality of first nanowires and a plurality of second nanowires, and the plurality of first nanowires are perpendicular to the plurality of second nanowires.
As shown in fig. 6, the present invention provides a method for manufacturing an infrared photodetector, including:
s601, providing an intrinsic substrate layer, wherein the intrinsic substrate layer comprises germanium tin materials;
s602, coating polymethyl methacrylate with a preset thickness on the surface of the intrinsic substrate layer, and heating according to a preset temperature and a preset time length;
s603, exposing the polymethyl methacrylate on the surface of the intrinsic substrate layer by using electron beams, and developing and fixing the exposed polymethyl methacrylate;
s604, in an etching mask machine, performing chlorine-based plasma reactive ion etching by using an etching mask to form a nanowire, rinsing the nanowire in isopropanol, and drying the nanowire in compressed nitrogen;
s605, coating polymethyl methacrylate with a preset thickness on the surface of the nanowire, heating according to a preset temperature and a preset time, performing electron beam exposure, and developing and fixing the exposed polymethyl methacrylate;
s606, depositing a chromium film with the thickness of 2nm and a gold film with the thickness of 100nm on the surface of the intrinsic substrate layer in sequence by using an electron beam evaporation system to form a metal wire;
and S607, removing impurities in acetone to obtain the finished infrared photoelectric detector.
Wherein the preset thickness is 300nm, the preset temperature is 180 ℃, and the preset time is 90 s.
In this example, first, 300nm thick PMMA (polymethyl methacrylate) was spin-coated on the intrinsic substrate layer, heated on a hot plate at 180 ℃ for 90s, and then the PMMA on the surface of the intrinsic substrate layer was exposed by electron beam. The exposed PMMA was developed in 4-methyl-2-pentanol/isopropanol (1:3) solution for 100s and then fixed in isopropanol solution for 30 s.
In step S604, chlorine-based plasma Reactive Ion Etching (RIE) is performed in an etcher using an etch mask to form nanowires comprising tin-germanium material, followed by rinsing in sufficient isopropyl alcohol and compressing N2Drying, spin-coating PMMA with a thickness of 300nm on the resulting nanowire structure, heating on a hot plate at 180 ℃ for 90s, and then performing electron beam exposure again, developing the exposed PMMA in a 4-methyl-2-pentanol/isopropanol (1:3) solution for 100s, and fixing in an isopropanol solution for 30 s.
In step S606, the PMMA after fixing is immediately transferred to an electron beam evaporation system, and a chromium thin film with a thickness of 2nm is deposited on the surface of the intrinsic substrate layer, and then a gold thin film with a thickness of 100nm is deposited, so as to obtain the metal wire. In the step S607, the program is executed,removing impurities in acetone at 60 deg.C, rinsing in sufficient isopropanol, compressing N2And (5) drying to obtain the finished infrared photoelectric detector.
It should be understood that, in the step S606, the chromium film with a thickness of 2nm is firstly deposited on the surface of the intrinsic substrate layer to enhance the adhesion of the substrate layer, and then the gold film with a thickness of 100nm is deposited, so that the gold film is effectively prevented from falling off from the germanium-tin material of the intrinsic substrate layer.
Therefore, in the infrared photoelectric detector manufactured by the method, the intrinsic substrate layer and the nanowire both comprise germanium tin materials, so that the intrinsic absorption of semiconductor materials is enhanced, and the photoresponse cutoff wavelength of the intermediate infrared detector can be expanded; meanwhile, the introduction of the nanowire structure can effectively improve the responsivity of the photoelectric detector in an infrared communication band and widen the detection range of the photoelectric detector.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (9)

1. An infrared photodetector, comprising:
an intrinsic substrate layer;
the nanowire, the metal wire and the electrode are positioned on one side of the intrinsic substrate layer;
the nanowires comprise a plurality of first nanowires and a plurality of second nanowires perpendicular to the first nanowires, the first nanowires and the second nanowires are intersected to form a plurality of unit cells, and the intrinsic substrate layer and the nanowires comprise germanium tin materials;
the metal wire is positioned in the unit cell; the metal wires comprise a first metal wire and a second metal wire, the extending direction of the first metal wire is the same as that of the first nanowire, and the extending direction of the second metal wire is the same as that of the second nanowire;
the electrodes comprise a first electrode and a second electrode; in the extending direction of the second nanowires, two first nanowires farthest away are respectively in contact with the first electrode and the second electrode, or in the extending direction of the first nanowires, two second nanowires farthest away are respectively in contact with the first electrode and the second electrode.
2. The infrared photodetector of claim 1, wherein the number of the first nanowires is the same as the number of the second nanowires, and each of the unit cells includes two first metal lines and two second metal lines.
3. The infrared photodetector of claim 2, wherein the metal lines are made of a material comprising at least one of gold and silver.
4. The infrared photodetector of claim 2, wherein the duty cycles of the nanowire and the metal wire are equal.
5. The infrared photodetector of claim 4, wherein the nanowires and the metal lines each have a duty cycle of 1/8.
6. The infrared photodetector of claim 1, wherein the unit cell is a square, the square having a side length of 0.3 μ ι η;
and the height of the nanowire is 0.3 mu m and the height of the metal wire is 115.3nm along the direction vertical to the plane of the intrinsic substrate layer.
7. The infrared photodetector of claim 1, wherein the electrode is made of a material comprising at least one of gold, silver, and aluminum.
8. The infrared photodetector of claim 1, wherein the tin component in the germanium-tin material is 1% to 10%.
9. A method for manufacturing an infrared photoelectric detector is characterized by comprising the following steps:
providing an intrinsic substrate layer, wherein the intrinsic substrate layer comprises germanium tin material;
coating polymethyl methacrylate with a preset thickness on the surface of the intrinsic substrate layer, and heating according to a preset temperature and a preset time length;
exposing the polymethyl methacrylate on the surface of the intrinsic substrate layer by using an electron beam, and developing and fixing the exposed polymethyl methacrylate;
in an etching mask machine, performing chlorine-based plasma reactive ion etching by using an etching mask to form a nanowire, rinsing the nanowire in isopropanol, and drying the nanowire in compressed nitrogen;
coating polymethyl methacrylate with a preset thickness on the surface of the nanowire, heating according to a preset temperature and a preset time, performing electron beam exposure, and developing and fixing the exposed polymethyl methacrylate;
sequentially depositing a chromium film with the thickness of 2nm and a gold film with the thickness of 100nm on the surface of the intrinsic substrate layer by using an electron beam evaporation system to form a metal wire;
and removing impurities in the acetone to obtain the finished infrared photoelectric detector.
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