CN111952386A - Dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector and method - Google Patents
Dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector and method Download PDFInfo
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- 238000004891 communication Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000002070 nanowire Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 239000007769 metal material Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 19
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000010931 gold Substances 0.000 description 17
- 238000001514 detection method Methods 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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Abstract
The invention discloses a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector, which comprises: an intrinsic Ge substrate layer (1); the length direction of the nanowire array (2) is parallel to the length direction of the intrinsic Ge substrate layer (1), and the nanowire array (2) is arranged on the intrinsic Ge substrate layer (1); a grating (3), the grating (3) being disposed on the nanowire array (2); the nanowire array comprises a first electrode (4) and a second electrode (5), wherein the first electrode (4) and the second electrode (5) are symmetrically arranged on the intrinsic Ge substrate layer (1) at two ends of the nanowire array (2) along the length direction of the intrinsic Ge substrate layer (1). The invention provides a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector, which utilizes metal surface plasma resonance to improve the absorption coefficient, further improves the responsivity of a Ge-based detector in an infrared communication waveband, and realizes a high-performance Ge-based infrared communication waveband photoelectric detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector and a method.
Background
The photoelectric detector has wide application, covers various fields of military and national economy, and is mainly used for ray measurement and detection, industrial automatic control, photometric measurement and the like in visible light and short wave infrared bands.
The infrared photoelectric detector has wide application in the fields of communication, night vision, guidance, astronomical observation, biomedical treatment and the like. The infrared detectors commonly used today are mainly III-V material photodetectors and II-VI material photodetectors. However, the InGaAs, InSb, tecdphg, PbS and other materials have the problems of complex process steps, high cost and incompatibility with a Si-based CMOS (Complementary Metal Oxide Semiconductor) standard process platform, which increases the device cost and reduces the device reliability. Meanwhile, the materials such as TeCdHg, PbS and the like also have toxicity and have certain potential safety hazard.
Compared with the traditional III-V family and II-V family infrared photoelectric detectors, the Ge-based infrared photoelectric detector is compatible with a Si-based CMOS (complementary metal oxide semiconductor) process in the preparation process, and has the potential advantages of high safety, small volume, easiness in integration, low cost, high performance and the like.
The existing Ge photoelectric detector based On a Si substrate or an SOI (Silicon On Insulator) substrate is widely applied in the communication and sensing fields. At present, the commonly used infrared communication waveband is 1.3-1.55 μm, and due to the limitation of the forbidden bandwidth of the Ge material, when the wavelength is more than or equal to 1.55 μm, the absorption coefficient is sharply reduced, so that the Ge photoelectric detector cannot meet the detection requirement of the infrared communication waveband, and the detection range of the Ge photoelectric detector is limited.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector and a method. The technical problem to be solved by the invention is realized by the following technical scheme:
a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector comprises:
an intrinsic Ge substrate layer;
the length direction of the nanowire array is parallel to the length direction of the intrinsic Ge substrate layer, and the nanowire array is arranged on the intrinsic Ge substrate layer;
a grating disposed over the nanowire array;
the first electrode and the second electrode are symmetrically arranged on the intrinsic Ge substrate layers at two ends of the nanowire array along the length direction of the intrinsic Ge substrate layers.
In one embodiment of the invention, the first electrode and the second electrode are the same size and shape.
In one embodiment of the invention, the material of the first electrode, the second electrode and the grating is the same.
In one embodiment of the present invention, the first electrode, the second electrode and the grating are all made of Au.
In one embodiment of the present invention, further comprising a third electrode and a fourth electrode, wherein the third electrode is located between the intrinsic Ge substrate layer and the second electrode, and the fourth electrode is located between the intrinsic Ge substrate layer and the first electrode.
In one embodiment of the present invention, the material of the third electrode and the fourth electrode is Ge.
In one embodiment of the invention, the material of the nanowire array is Ge.
In one embodiment of the present invention, the height of the nanowire array is 0-500nm, and the height of the grating is 100-300 nm.
An embodiment of the present invention further provides a method for manufacturing a dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector, which is used for manufacturing the Ge-based infrared communication band photodetector described in any one of the embodiments, and the method includes:
selecting an intrinsic Ge substrate layer;
coating photoresist on the intrinsic Ge substrate layer, and carrying out exposure, development and fixation treatment on the photoresist;
depositing Cr on the intrinsic Ge substrate layer and the residual photoresist to form a Cr layer;
depositing a metallic material layer on the Cr layer;
removing the photoresist, the Cr layer and the metal material layer except for the first region, the second region and the third region, and simultaneously removing the Cr layer and the metal material layer except for the position where the grating needs to be formed in the third region so as to form a first electrode in the first region, a second electrode in the second region and a Cr layer and a grating which are arranged in a stacked mode in the third region;
and etching the intrinsic Ge substrate layer in the third area by using an ion etching process to form a nanowire array and a grating arranged on the nanowire array, wherein the length direction of the nanowire array is parallel to the length direction of the intrinsic Ge substrate layer, and the first electrode and the second electrode are symmetrically arranged on the intrinsic Ge substrate layer at two ends of the nanowire array along the length direction of the intrinsic Ge substrate layer.
In one embodiment of the present invention, the material of the metal material layer is Au.
The invention has the beneficial effects that:
the invention provides a dual-mechanism plasma enhanced Ge-based infrared communication waveband photoelectric detector, which utilizes metal surface plasma resonance to improve the absorption coefficient, further improves the responsivity of a Ge-based detector in an infrared communication waveband, and realizes a high-performance Ge-based infrared communication waveband photoelectric detector.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a photodetector provided in the prior art;
FIG. 2 is a schematic diagram of another prior art photodetector configuration;
fig. 3 is a schematic structural diagram of a dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a nanowire array and a grating according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another nanowire array and grating structure provided by embodiments of the present invention;
fig. 6 is a schematic diagram of an electron absorption transition diagram according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
In order to improve the detection capability of the photoelectric detector in the infrared communication wave band, the absorption of light can be enhanced by adopting a nano structure, so that the performance of the photoelectric detector is improved. In 2019, the article "All-Si photo detectors with a wavelength for Near-isolated polarization detection" published by b.feng et al, university of counterden in the prior art, utilizes a nano structure to improve the light absorption efficiency and quantum efficiency of an All-silicon photodetector, and has a structure shown in fig. 1, wherein the substrate and the nano wire are both Si materials, and Au materials are arranged above the Si materials, and realize plasmon resonance through the Au materials and light with corresponding wavelengths, so that the absorption of light is enhanced, and the detection efficiency of the detector is improved. The structure has the defects that the Si material belongs to an indirect band gap semiconductor material, is not suitable for being used as a luminescent material and is not beneficial to photoelectric integration. In addition, because of the limitation of the forbidden bandwidth of Si, the maximum detection wavelength is 0.85 μm, and the detection efficiency in the infrared communication band is low.
In addition, m.lodari et al, national institute of research and photonics and nanotechnology, in 2019, published an article "plasma-enhanced Ge-based metal-semiconductor-metal-photodetector at near-IR wavelengths", which has a structure as shown in fig. 2, where a layer of Ge material is over a Si substrate, and a metal grating is over the Ge material. The plasmon optical grating is used for enhancing the absorption of light and improving the responsivity of the photoelectric detector. The structure has the disadvantage that only one absorption mechanism is intrinsic absorption of Ge material, and hot electron absorption inside Au does not exist, so that the detection efficiency is low. In addition, the intrinsic absorption of the Ge material alone results in a relatively small absorption range and relatively low detection capability at 1.55 μm or more.
Therefore, referring to fig. 3, fig. 3 is a schematic structural diagram of a dual-mechanism plasma enhanced Ge-based infrared communication band photodetector according to an embodiment of the present invention. This embodiment provides a dual system plasma enhanced Ge-based infrared communication band photodetector, this Ge-based infrared communication band photodetector includes:
an intrinsic Ge substrate layer 1;
the length direction of the nanowire array 2 is parallel to the length direction of the intrinsic Ge substrate layer 1, and the nanowire array 2 is arranged on the intrinsic Ge substrate layer 1;
the grating 3, the grating 3 is set up on the nanowire array 2;
the first electrode 4 and the second electrode 5 are symmetrically arranged on the intrinsic Ge substrate layer 1 at two ends of the nanowire array 2 along the length direction of the intrinsic Ge substrate layer 1.
Further, the first electrode 4 and the second electrode 5 have the same size and shape, for example, the first electrode 4 and the second electrode 5 are both square, and the first electrode 4 and the second electrode 5 may have other shapes, which is not limited in this embodiment.
Further, the materials of the first electrode 4, the second electrode 5 and the grating 3 are all the same.
Preferably, the materials of the first electrode 4, the second electrode 5 and the grating 3 are Au.
Further, the material of the nanowire array 2 is Ge.
Further, the Ge-based infrared communication band photodetector may further include a third electrode 6 and a fourth electrode 7, wherein the third electrode 6 is located between the intrinsic Ge substrate layer 1 and the second electrode 5, and the fourth electrode 7 is located between the intrinsic Ge substrate layer 1 and the first electrode 4.
Preferably, the material of the third electrode 6 and the fourth electrode 7 is Ge.
Further, referring to FIGS. 4 and 5, the height H of the nanowire array 2 is 0-500nm, and the height (i.e., thickness) of the grating is 100-300 nm.
For example, the nanowire array 2 has a height H of 300nm and the grating has a height (i.e., thickness) of 100 nm.
In addition, the period P and the width W of each nanowire bar in the nanowire array 2 are determined by the design wavelength, for example, when the wavelength of the selected plasmon enhancement is 1.55 μm, the period P is 1.3 μm, and the width W of the nanowire bar is 0.76 μm.
The embodiment provides a dual-system plasma enhanced Ge-based infrared communication waveband photoelectric detector, which aims to solve the problems that a III-V group material photoelectric detector and a II-VI group material photoelectric detector in the prior art are complex in process steps, high in cost and incompatible with a Si-based CMOS standard process platform and the problems that the existing Ge photoelectric detector is low in absorption coefficient of an infrared communication waveband and the existing material is not beneficial to photoelectric integration.
Example two
Referring to fig. 3, the present embodiment further provides a method for manufacturing a dual-mechanism plasma enhanced Ge-based infrared communication band photodetector on the basis of the above embodiment, where the method includes:
and 2, coating photoresist on the intrinsic Ge substrate layer 1, and exposing, developing and fixing the photoresist.
Specifically, a photoresist (such as PMMA) with a thickness of 300nm is first spin-coated on the intrinsic Ge substrate layer 1, then heated on a hot plate at 180 ℃ for 90s, and then subjected to electron beam exposure, the exposed PMMA is developed in a 4-methyl-2-pentanol/isopropanol (4-methyl-2-pentanol to isopropanol melt ratio, such as 1:3) solution for 100s, and finally fixed in an isopropanol solution for 30s, and after the development, a desired portion of the photoresist is removed, and the undesired photoresist is remained, and the desired portion of the photoresist is the photoresist for forming the first electrode 4, the second electrode 5, and the corresponding region of the grating 3.
And 3, depositing Cr on the intrinsic Ge substrate layer 1 and the residual photoresist to form a Cr layer.
Specifically, after the step 2 is finished, immediately transferring the intrinsic Ge substrate layer 1 to an electron beam evaporation system, and depositing Cr on the intrinsic Ge substrate layer 1 and the residual photoresist to form a Cr layer, wherein the Cr layer is used for adhering a metal material layer on the intrinsic Ge substrate layer 1, and the Cr layer is crucial for adhering the grating on the intrinsic Ge substrate layer 1.
Preferably, the thickness of the Cr layer is 2 nm.
And 4, depositing a metal material layer on the Cr layer.
Specifically, a metallic material layer is formed by depositing a metallic material on the Cr layer using an electron beam evaporation system.
Preferably, the material of the metal material layer is Au, and the thickness is, for example, 100 nm.
And 5, removing the photoresist, the Cr layer and the metal material layer except the first region, the second region and the third region, and simultaneously removing the Cr layer and the metal material layer except the position where the grating needs to be formed in the third region, so as to form a first electrode 4 in the first region, a second electrode 5 in the second region, and a Cr layer and a grating 3 which are arranged in a stacked mode in the third region.
Specifically, in a temperature environment of 60 ℃, acetone is used to remove the photoresist, the Cr layer, and the metal material layer outside the first, second, and third regions, and to remove the Cr layer and the metal material layer outside the third region except where the grating needs to be formed, at this time, the Au remaining in the first region is the first electrode 4, and the Au remaining in the second region is the first electrode 4The Au remained in the area is the second electrode 5, the Au remained in the third area forms the grating 3, and then the sample is rinsed in sufficient isopropanol and compressed N2And (4) drying.
And 6, etching the intrinsic Ge substrate layer 1 in the third region by using an ion etching process to form a nanowire array 2, wherein the length direction of the nanowire array 2 is parallel to the length direction of the intrinsic Ge substrate layer 1, and the first electrode 4 and the second electrode 5 are symmetrically arranged on the intrinsic Ge substrate layers 1 at two ends of the nanowire array 2 along the length direction of the intrinsic Ge substrate layer 1.
Specifically, according to the shape of the nanowire array 2 to be formed, chlorine-based plasma Reactive Ion Etching (RIE) is performed in an etcher using the patterned metal structure as an etching mask to form the nanowire array 2, and in addition, for convenience of etching, the intrinsic Ge substrate layer 1 except under the first electrode 4 and the second electrode 5 may also be etched away, and the intrinsic Ge substrate layer 1 under the first electrode 4 and the second electrode 5 is remained, i.e., the third electrode 6 between the intrinsic Ge substrate layer 1 and the second electrode 5 and the fourth electrode 7 between the intrinsic Ge substrate layer 1 and the first electrode 4 are formed.
The photoelectric detector of the invention forms plasma resonance with the grating made of Au through incident light to generate a local enhancement effect of light, thereby realizing absorption enhancement, further improving the detection capability of the Ge-based photoelectric detector in an infrared communication waveband, and realizing the high-performance Ge-based infrared communication waveband photoelectric detector.
The photoelectric detector of the invention has the following specific beneficial effects:
(1) the Ge material is adopted as a main preparation material, has the characteristics of compatibility with a Si-based CMOS process, high safety, low cost and the like in process, is an indirect band gap semiconductor material, but can be changed into a direct band gap semiconductor material by introducing tensile strain or adding other alloys due to the specific energy band structure, so the Ge material can be used as a luminescent material, and is favorable for photoelectric integration.
(2) The invention has two absorption mechanisms which are respectively as follows: intrinsic absorption of Ge material and hot electron absorption of Au internal electrons. Compared with the common Ge photoelectric detector, the Ge photoelectric detector has the advantages that a hot electron absorption mechanism is added, the absorption capacity of a device is enhanced, and the responsivity of the photoelectric detector in an infrared communication waveband is improved. As shown in fig. 6, it can be seen from (a) in fig. 6 that one absorption mechanism is that electrons in the valence band of the Ge material absorb photon energy, transition to the conduction band, and contribute to photocurrent. As can be seen from (b) in fig. 6, another absorption mechanism first localizes light at the interface of gold and Ge materials through metal plasmon, and then the gold internal electrons gain energy to undergo thermionic emission to jump the schottky barrier at the Au and Ge interface to the Ge nanowire as part of the photocurrent. The invention improves the responsivity of the photoelectric detector in the infrared communication band through photoelectron absorption of two mechanisms, and widens the detection range of the photoelectric detector. The specific resonance wavelength is determined by the structural size of the gold grating on top of the Ge nanowire.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic data point described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A dual-mechanism plasma enhanced Ge-based infrared communication band photodetector is characterized by comprising:
an intrinsic Ge substrate layer (1);
the length direction of the nanowire array (2) is parallel to the length direction of the intrinsic Ge substrate layer (1), and the nanowire array (2) is arranged on the intrinsic Ge substrate layer (1);
a grating (3), the grating (3) being disposed on the nanowire array (2);
the nanowire array comprises a first electrode (4) and a second electrode (5), wherein the first electrode (4) and the second electrode (5) are symmetrically arranged on the intrinsic Ge substrate layer (1) at two ends of the nanowire array (2) along the length direction of the intrinsic Ge substrate layer (1).
2. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 1, wherein said first electrode (4) and said second electrode (5) are the same size and shape.
3. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 2, wherein the materials of said first electrode (4), said second electrode (5) and said grating (3) are the same.
4. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 3, wherein the materials of said first electrode (4), said second electrode (5) and said grating (3) are Au.
5. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 1 or 2, further comprising a third electrode (6) and a fourth electrode (7), wherein said third electrode (6) is located between said intrinsic Ge substrate layer (1) and said second electrode (5), and said fourth electrode (7) is located between said intrinsic Ge substrate layer (1) and said first electrode (4).
6. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 5, wherein the material of said third electrode (6) and fourth electrode (7) is Ge.
7. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 1, wherein the material of said nanowire array (2) is Ge.
8. The dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector of claim 1, wherein the height of said nanowire array (2) is 0-500nm, and the height of said grating (3) is 100-300 nm.
9. A method for preparing a dual-mechanism plasma-enhanced Ge-based infrared communication band photodetector, which is used for preparing the Ge-based infrared communication band photodetector of any one of claims 1 to 8, the method comprising:
selecting an intrinsic Ge substrate layer (1);
coating photoresist on the intrinsic Ge substrate layer (1), and carrying out exposure, development and fixation treatment on the photoresist;
depositing Cr on the intrinsic Ge substrate layer (1) and the residual photoresist to form a Cr layer;
depositing a metallic material layer on the Cr layer;
removing the photoresist, the Cr layer and the metal material layer except the first area, the second area and the third area, and simultaneously removing the Cr layer and the metal material layer except the position where the grating (3) needs to be formed in the third area so as to form a first electrode (4) in the first area, a second electrode (5) in the second area, and a Cr layer and a grating (3) which are arranged in a stacked mode in the third area;
and etching the intrinsic Ge substrate layer (1) in the third region by using an ion etching process to form a nanowire array (2), wherein the length direction of the nanowire array (2) is parallel to the length direction of the intrinsic Ge substrate layer (1), and the first electrode (4) and the second electrode (5) are symmetrically arranged on the intrinsic Ge substrate layer (1) at two ends of the nanowire array (2) along the length direction of the intrinsic Ge substrate layer (1).
10. The method of claim 1, wherein the metal material layer is Au.
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| CN113948595B (en) * | 2021-09-09 | 2023-07-28 | 广东石油化工学院 | Broadband hot electron light detector and preparation method thereof |
| CN117776089A (en) * | 2024-02-27 | 2024-03-29 | 北京中科海芯科技有限公司 | Infrared light source device, infrared light source array and manufacturing method thereof |
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