CN107758607A - A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio - Google Patents
A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio Download PDFInfo
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- CN107758607A CN107758607A CN201710910028.2A CN201710910028A CN107758607A CN 107758607 A CN107758607 A CN 107758607A CN 201710910028 A CN201710910028 A CN 201710910028A CN 107758607 A CN107758607 A CN 107758607A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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Abstract
Present invention is disclosed a kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio, the method for present invention spin coating one layer of positive photoresist polymethyl methacrylate of spin coating on the substrate of offer, front baking on hot plate is placed in；Development is exposed to sample using electron beam lithography and obtains expected polymethyl methacrylate micro-nano structure；Using magnetron sputtering plating deposition technique on sample the layer function material film of conformal deposited one；Utilize the mode of spin coating one layer of planarization layer hydrogen silsesquioxane of spin coating on the sample after sputter process；Then sample is placed on hot plate low-temperature bake to remove the solvent in smoothing material；Sample is processed by shot blasting untill removing all metals in polymethyl methacrylate upper surface with angled ion beam polissoir with angle of the angle less than 90 ° again；Finally sample is handled with oxygen plasma to reach removal polymethyl methacrylate and carry out the high conformal nanoscale eurymeric structure of the final high-aspect-ratio of unstressed release.
Description
Technical field：
The present invention relates to a kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio, available for optical field,
Biological field, field of acoustics.
Background technology：
The high conformal nanoscale eurymeric structure of high-aspect-ratio, has broad application prospects in optical field and biological field,
Especially, traditional optical imagery and micro-nano technology technology are limited by diffraction limit, based on surface phasmon
The high conformal artificial micro-structure of (surface plamon polaritions, SPPs) can be realized super by the modulation to light
Resolution imaging；Cell culture of biological field etc. high conformal also has certain requirement for the high-aspect-ratio of micro-nano structure.
The preparation of traditional micro-nano structure is that exposure imaging, vaporization function material, wet method remove photoresist on a photoresist,
Or directly perform etching after development, so as to realize in micro-nano structure pattern transfer on photoresist to functional material, however,
Traditional processing method can not meet conformal filling due to evaporating, and due to the effect of capillary force, nothing during wet etching
Method processes high conformal, high-aspect-ratio micro-nano structure.
The content of the invention：
The invention aims to overcome evaporation in the prior art can not meet conformal filling, wet etching capillary force etc.
Cause it is difficult to ensure that the shortcomings that prepared by high-aspect-ratio high conformal structure.The technical solution adopted by the present invention is first in polymethyl
Make expected nanoscale eurymeric structure using electron beam exposure development on sour methyl esters, then through magnetron sputtering carry out conformal filling,
It is then spin coated onto one layer of SOG material or hydrogen silsesquioxane carries out planarization process, polished again through angled ion beam until poly- methyl
The method that the material of methyl acrylate upper surface all removes, remaining polymethyl methacrylate is removed through dry etching.
To reach above-mentioned technique effect, this patent comprises the following steps that：
A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio, comprises the following steps：
Step 1: providing substrate, and cleaned；
Step 2: the spin coating photoresist on substrate, and carry out front baking；
Step 3: photoresist is exposed；
Step 4: the sample after exposure is developed；
Step 5: using coating process in photoresist superficial deposit functional membranes；
Step 6: in one layer of smoothing material of spin coating on the substrate of deposited functional membranes；
Step 7: baking, removes the solvent in smoothing material, further planarization；
Step 8: using glossing, planarization layer and the functional membranes of protrusion are removed, until being polished to lower floor
Untill photoresist；
Step 9: remove remaining photoresist using selective removal technology or heating；It is conformal so as to obtain high-aspect-ratio height
Nanoscale eurymeric structure graph.
Further to improve, the photoresist in the step 2 is polymethyl methacrylate, and ZEP520 or eurymeric are purple
Outer photoresist.
It is further to improve, in the step 3, development, the light are exposed to photoresist top layer using photoetching technique
Lithography be electron beam lithography, Ion Beam Lithography Technology, ultraviolet or extreme ultraviolet technology, X-ray exposure technology, swash
Light interference lithography technology or nano impression；The time of development is more than 30 seconds.
Further to improve, the coating process in the step 5 is ald, magnetron sputtering, plating, ion plating
Or chemical vapor deposition；The functional membranes of deposition are solid-state optical medium, mechanical wave medium, magnetizing mediums or dielectric；It is described
Dielectric includes metal and semi-conducting material.
It is further to improve, the planarization layer in the step 6 is polymethyl methacrylate, spin on glass or
Hydrogen silsesquioxane.
Temperature that is further to improve, being toasted in the step 7<100 DEG C, the time of baking is 5~10 minutes.
Further to improve, polishing method is in the step 8：Chemically mechanical polishing, MRF or ion beam
Polishing；Selective removal technology includes in the step 9：Dry etching, wet etching.
Further to improve, the functional material that whole planarization layer and photoresist upper stratas are polished in the step 8 is thin
Film.
Further to improve, the time of selective removal is to remove remaining photoresist or directly thermal decomposition in the step 9
Remaining photoresist is removed to be defined.
The nanoscale eurymeric knot that a kind of any of the above-described high conformal autologous preparation method of nanoscale of high-aspect-ratio makes
Structure is used to make plane super lenses, nano gap SERS substrate, high density transducer, high-aspect-ratio X ray
Zone plate, master grating or special high-density grating, or for super transmission or high-aspect-ratio electrode pair, sensor electrode.
The beneficial effects of the present invention are advanced width can not be met by solving in existing optics and biological field minute manufacturing
Than high conformal structure preparation the problem of, using the method can be prepared on substrate with high-aspect-ratio height is conformal, dimensional accuracy,
The nanoscale eurymeric structure of the features such as low surface roughness, small structural stress, it is optical field and the minimum yardstick of biological field, pole
High accuracy processing provides a kind of effective method.
Brief description of the drawings
In order that the object, technical solutions and advantages of the present invention are clearer, the present invention is made below in conjunction with accompanying drawing into
The detailed description of one step, wherein：
Fig. 1 is that the structural representation after polymethyl methacrylate is got rid of on substrate
Fig. 2 is that the structural representation after development is exposed to polymethyl methacrylate
Fig. 3 is that the schematic diagram after conformal deposited is carried out using magnetron sputtering
Fig. 4 is to deposit the schematic diagram after smoothing material hydrogen silsesquioxane
Fig. 5 is the schematic diagram after the polishing of angled ion beam
Fig. 6 is the design sketch after polymethyl methacrylate removes
Simple symbol explanation in figure：
The photoresist of 1 chip (i.e. substrate) 2:Polymethyl methacrylate
The functional material metal Al of pattern 4 after the exposed development of 3 polymethyl methacrylates
5 smoothing materials：Functional material metal Al after the polishing of hydrogen silsesquioxane 6
Embodiment
The specific embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
(1) substrate is provided：Select monocrystalline substrate and be first cleaned by ultrasonic 300s with acetone, then with isopropanol ultrasound 300s,
And dried up with nitrogen.
Design sketch as shown in Figure 1, elder generation drip 3% polymethyl methacrylate on substrate and rotate 5s with 1000r/s,
Then 4000r/s rotates 60s again, is placed in hot plate or baking oven with 180 DEG C of baking 300s；
Design sketch as shown in Figure 2, utilize electron beam exposure apparatus Raith 150two, using high pressure as 30KV, 30 μm of diaphragms
Fixed point exposure is carried out to polymethyl methacrylate, and the slice, thin piece after exposure at MIBK (methyl iso-butyl ketone (MIBK)):IPA (isopropyls
Amine)=1：Develop 60s in 3 developer solution, is then fixed 60s (at least 30s) with IPA, and dried up with nitrogen.
Be 80V in bias as shown in figure 3, using magnetron sputtering, electric current 0.8A, vacuum is sputters under conditions of 1 pa
Plated film 280 seconds.
Design sketch as shown in Figure 4, first the upper a few drop hydrogen silsesquioxane solution of drop on the sample after figure (3) processing, are used in combination
Spin coater is with 2000r/s spin coatings 60s.
Sample by spin coating hydrogen silsesquioxane film is toasted on hot plate with 50 DEG C (being not higher than 100 DEG C)
300s (5-10 minutes).
As shown in figure (5), using angled ion beam device, using high pressure as 500ev, line 100mA, angle is 10 ° to sample
Product are processed by shot blasting, untill the metal on polymethyl methacrylate upper strata all removes.
As shown in figure (6), oxygen plasma treatment 2-5min is utilized through scheming (5) treated sample, until gathering for remnants
Untill methyl methacrylate all removes, so as to obtain the high conformal metallic figure of high-aspect-ratio.
Claims (10)
- A kind of 1. high conformal autologous preparation method of nanoscale of high-aspect-ratio, it is characterised in that：Comprise the following steps：Step 1: providing substrate, and cleaned；Step 2: the spin coating photoresist on substrate, and carry out front baking；Step 3: photoresist is exposed；Step 4: the sample after exposure is developed；Step 5: using coating process in photoresist superficial deposit functional membranes；Step 6: in one layer of smoothing material of spin coating on the substrate of deposited functional membranes；Step 7: baking, removes the solvent in smoothing material；Step 8: using glossing, planarization layer and the functional membranes of protrusion are removed, until being polished to lower floor's photoetching Untill glue；Step 9: remove remaining photoresist using selective removal technology or heating；So as to obtain the high conformal nanometer of high-aspect-ratio Level eurymeric structure graph.
- 2. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Photoresist in the step 2 is polymethyl methacrylate, ZEP520 or eurymeric ultraviolet photoresist.
- 3. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：In the step 3, development is exposed to photoresist top layer using photoetching technique, the photoetching technique is electron beam exposure Technology, Ion Beam Lithography Technology, ultraviolet or extreme ultraviolet technology, X-ray exposure technology, laser interference photolithography technology are received Rice impressing；The time of development is more than 30 seconds.
- 4. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Coating process in the step 5 is ald, magnetron sputtering, plating, ion plating or chemical vapor deposition；Deposition Functional membranes be solid-state optical medium, mechanical wave medium, magnetizing mediums or dielectric；The dielectric includes metal and partly led Body material.
- 5. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Planarization layer in the step 6 is polymethyl methacrylate, spin on glass or hydrogen silsesquioxane.
- 6. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：The temperature toasted in the step 7<100 DEG C, the time of baking is 5~10 minutes.
- 7. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Polishing method is in the step 8：Ion beam polishing, chemically mechanical polishing or MRF；Selected in the step 9 Selecting property removal technology includes：Dry etching, wet etching.
- 8. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：The functional membranes on whole planarization layer and photoresist upper stratas are polished in the step 8.
- 9. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：In the step 9 time of selective removal using remove remaining photoresist or directly thermal decomposition remove remaining photoresist as It is accurate.
- What 10. the high conformal autologous preparation method of nanoscale of any high-aspect-ratio of claim 1 to 10 made receives Meter level eurymeric structure is used to make plane super lenses, nano gap SERS substrate, high density transducer, profundity Width is than X ray zone plate, master grating or special high-density grating, or for super transmission or high-aspect-ratio electrode pair, sensor Electrode.
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| CN201710910028.2A CN107758607A (en) | 2017-09-29 | 2017-09-29 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
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| CN201710910028.2A CN107758607A (en) | 2017-09-29 | 2017-09-29 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
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Cited By (9)
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| CN109164518A (en) * | 2018-10-11 | 2019-01-08 | 业成科技（成都）有限公司 | Super lens, preparation method and the optical module using it |
| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method of preparing the releasable micro-nano structure of large area |
| CN111115563A (en) * | 2019-12-23 | 2020-05-08 | 湖南大学 | Method for stripping functional material by full-dry method |
| WO2021083080A1 (en) * | 2019-10-30 | 2021-05-06 | 南京大学 | Preparation method for silicon nanometer needle array having extra-high depth to width ratio |
| CN113517363A (en) * | 2021-05-19 | 2021-10-19 | 西安电子科技大学 | Infrared photoelectric detector and manufacturing method thereof |
| CN113793714A (en) * | 2021-07-28 | 2021-12-14 | 湖南大学 | Preparation method for large-area soft X-ray zone plate |
| CN114235037A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | High-aspect-ratio nano-gap multi-physical-field coupling detection platform and detection method |
| CN116511719A (en) * | 2023-05-25 | 2023-08-01 | 中山大学 | Method and system for preparing micro-nano structure by laser-electron beam and micro-nano structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109164518A (en) * | 2018-10-11 | 2019-01-08 | 业成科技（成都）有限公司 | Super lens, preparation method and the optical module using it |
| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method of preparing the releasable micro-nano structure of large area |
| WO2021083080A1 (en) * | 2019-10-30 | 2021-05-06 | 南京大学 | Preparation method for silicon nanometer needle array having extra-high depth to width ratio |
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| CN113793714A (en) * | 2021-07-28 | 2021-12-14 | 湖南大学 | Preparation method for large-area soft X-ray zone plate |
| CN114235037A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | High-aspect-ratio nano-gap multi-physical-field coupling detection platform and detection method |
| CN116511719A (en) * | 2023-05-25 | 2023-08-01 | 中山大学 | Method and system for preparing micro-nano structure by laser-electron beam and micro-nano structure |
| CN116511719B (en) * | 2023-05-25 | 2023-11-28 | 中山大学 | Method and system for preparing micro-nano structure by laser-electron beam and micro-nano structure |
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Application publication date: 20180306 |