CN113495434B - 多射束用的消隐装置以及多带电粒子束描绘装置 - Google Patents
多射束用的消隐装置以及多带电粒子束描绘装置 Download PDFInfo
- Publication number
- CN113495434B CN113495434B CN202110284684.2A CN202110284684A CN113495434B CN 113495434 B CN113495434 B CN 113495434B CN 202110284684 A CN202110284684 A CN 202110284684A CN 113495434 B CN113495434 B CN 113495434B
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- Prior art keywords
- blanking
- blanking device
- insulating film
- film
- electrode
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- 239000002245 particle Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
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- 230000000149 penetrating effect Effects 0.000 claims description 3
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- 239000010408 film Substances 0.000 description 106
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- 238000010894 electron beam technology Methods 0.000 description 18
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 7
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
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- 238000009713 electroplating Methods 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
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- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2061—Electron scattering (proximity) correction or prevention methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
- H01J2237/0437—Semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020047967A JP7359050B2 (ja) | 2020-03-18 | 2020-03-18 | マルチビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置 |
| JP2020-047967 | 2020-03-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113495434A CN113495434A (zh) | 2021-10-12 |
| CN113495434B true CN113495434B (zh) | 2024-08-27 |
Family
ID=77747018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110284684.2A Active CN113495434B (zh) | 2020-03-18 | 2021-03-17 | 多射束用的消隐装置以及多带电粒子束描绘装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11355302B2 (https=) |
| JP (1) | JP7359050B2 (https=) |
| KR (1) | KR102551087B1 (https=) |
| CN (1) | CN113495434B (https=) |
| TW (1) | TWI775308B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024135231A (ja) * | 2023-03-22 | 2024-10-04 | 株式会社東芝 | 接合型配線部材 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668015A (zh) * | 2009-10-26 | 2012-09-12 | 迈普尔平版印刷Ip有限公司 | 带电粒子多子射束光刻系统、调节装置及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3145149B2 (ja) | 1991-10-17 | 2001-03-12 | 富士通株式会社 | 荷電粒子ビーム偏向装置 |
| JP2000114147A (ja) | 1998-10-05 | 2000-04-21 | Advantest Corp | 荷電粒子ビーム露光装置 |
| JP2001109018A (ja) | 1999-10-12 | 2001-04-20 | Matsushita Electric Ind Co Ltd | 液晶表示装置およびその駆動方法 |
| CN101103417B (zh) * | 2003-09-05 | 2012-06-27 | 卡尔蔡司Smt有限责任公司 | 粒子光学系统和排布结构,以及用于其的粒子光学组件 |
| JP4387755B2 (ja) * | 2003-10-14 | 2009-12-24 | キヤノン株式会社 | 偏向器アレイおよびその製造方法、ならびに該偏向器アレイを用いた荷電粒子線露光装置 |
| JP2005142101A (ja) * | 2003-11-10 | 2005-06-02 | Canon Inc | 電極基板の製造方法、該電極基板を用いた偏向器、ならびに該偏向器を用いた荷電粒子線露光装置 |
| JP2006332256A (ja) * | 2005-05-25 | 2006-12-07 | Canon Inc | 配線基板の製造方法 |
| DE102008010123B4 (de) * | 2007-02-28 | 2024-11-28 | Ims Nanofabrication Gmbh | Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung |
| US8198601B2 (en) * | 2009-01-28 | 2012-06-12 | Ims Nanofabrication Ag | Method for producing a multi-beam deflector array device having electrodes |
| EP2251893B1 (en) * | 2009-05-14 | 2014-10-29 | IMS Nanofabrication AG | Multi-beam deflector array means with bonded electrodes |
| WO2012055936A1 (en) * | 2010-10-26 | 2012-05-03 | Mapper Lithography Ip B.V. | Lithography system, modulation device and method of manufacturing a fiber fixation substrate |
| NL2006868C2 (en) * | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP2015023286A (ja) | 2013-07-17 | 2015-02-02 | アイエムエス ナノファブリケーション アーゲー | 複数のブランキングアレイを有するパターン画定装置 |
| JP6553973B2 (ja) | 2014-09-01 | 2019-07-31 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置 |
| US9330881B2 (en) | 2014-09-01 | 2016-05-03 | Nuflare Technology, Inc. | Blanking device for multi charged particle beams, and multi charged particle beam writing apparatus |
| JP6500383B2 (ja) * | 2014-10-03 | 2019-04-17 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置 |
| JP5816739B1 (ja) * | 2014-12-02 | 2015-11-18 | 株式会社ニューフレアテクノロジー | マルチビームのブランキングアパーチャアレイ装置、及びマルチビームのブランキングアパーチャアレイ装置の製造方法 |
| JP6709109B2 (ja) | 2016-05-31 | 2020-06-10 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置 |
| US10593509B2 (en) * | 2018-07-17 | 2020-03-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
-
2020
- 2020-03-18 JP JP2020047967A patent/JP7359050B2/ja active Active
-
2021
- 2021-02-04 TW TW110104187A patent/TWI775308B/zh active
- 2021-02-08 US US17/169,782 patent/US11355302B2/en active Active
- 2021-03-03 KR KR1020210028139A patent/KR102551087B1/ko active Active
- 2021-03-17 CN CN202110284684.2A patent/CN113495434B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102668015A (zh) * | 2009-10-26 | 2012-09-12 | 迈普尔平版印刷Ip有限公司 | 带电粒子多子射束光刻系统、调节装置及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI775308B (zh) | 2022-08-21 |
| US20210296074A1 (en) | 2021-09-23 |
| JP2021150456A (ja) | 2021-09-27 |
| KR20210117159A (ko) | 2021-09-28 |
| KR102551087B1 (ko) | 2023-07-04 |
| US11355302B2 (en) | 2022-06-07 |
| TW202201446A (zh) | 2022-01-01 |
| JP7359050B2 (ja) | 2023-10-11 |
| CN113495434A (zh) | 2021-10-12 |
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