CN113488559A - Molybdenum sulfide/lithium niobate composite optical transceiver and preparation method thereof - Google Patents
Molybdenum sulfide/lithium niobate composite optical transceiver and preparation method thereof Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 67
- 239000002131 composite material Substances 0.000 title claims abstract description 41
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 35
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 83
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 72
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910003327 LiNbO3 Inorganic materials 0.000 claims abstract description 48
- 239000010408 film Substances 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 33
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 30
- 238000001704 evaporation Methods 0.000 claims description 8
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- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 230000005693 optoelectronics Effects 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a molybdenum sulfide/lithium niobate composite optical transceiver and a preparation method thereof, wherein the molybdenum sulfide/lithium niobate composite optical transceiver comprises single crystal LiNbO3Formed on single crystal LiNbO3Layered MoS of a surface2Layer of with MoS2A layer of partially overlapping p-type material, and an electrode disposed on the single crystal LiNbO3，MoS2Layer, p-type material and MoS2Over the overlapping part of the layer and the p-type material or comprising a p-type silicon-based substrate, HfO2Layer, MoS2Layer of two-dimensional material, LiNbO3Crystalline thin film and electrode, the HfO2Partially covered with a silicon-based substrate, said MoS2Two-dimensional material layer and the HfO2Layer partially overlapped with the LiNbO3The crystalline film is arranged on the MoS2Two-dimensional material layer and HfO2Layer overlappingIn part. The invention adopts LiNbO3To enhance MoS2The photoelectric property of the two-dimensional material can reduce the process cost; using MoS compared to conventional modulators2/LiNbO3The insertion loss of the composite optical transceiver is reduced, the dependence on silicon is reduced, the silicon composition is not required to be controlled strictly, and the optical transceiver with low power consumption and small volume can be obtained only by a heterojunction stacking step.
Description
Technical Field
The invention relates to an optical transceiver, in particular to a molybdenum sulfide/lithium niobate composite optical transceiver and a preparation method thereof, wherein the insertion loss is reduced, the dependence on silicon is reduced, the silicon component is not required to be controlled strictly, and only a heterojunction stacking step is required.
Background
The human society of the twenty-first century has advanced into the information age, and the rapid development of internet technology has led to a new technological revolution, with an exponential increase in the demand for communication capacity. The optical communication technology has become the mainstream technology of the current communication by virtue of the advantages of high bandwidth, low crosstalk, interference resistance, low loss and the like. The optical transceiver is used as a core device in the optical communication technology, and the existing performance indexes are difficult to meet the increasing requirement of ultra-high speed transmission, so that the optical transceiver becomes the bottleneck of the development of the ultra-large capacity optical communication technology.
In the field of nanotechnology, the most important thing for realizing high-speed photoelectric devices is to realize the regulation and control of light in an on-chip integrated circuit. The traditional electro-optical modulation device is in the micron order, which is not beneficial to the miniaturization and speed improvement of the device. Therefore, the realization of the nano-scale electro-optical modulator becomes an urgent problem to be solved.
The existing optical transceiver depends on silicon-based materials, but the performance improvement of the optical transceiver is greatly limited by the inherent characteristics of the silicon materials (indirect bandgap semiconductor materials, wireless electro-optical effect and the like). Therefore, the european monopoly enterprise is continuously improving the performance of silicon optical transceivers, and is also beginning to develop the next generation of semiconductor photoelectric materials.
Molybdenum disulfide (MoS)2) The two-dimensional semiconductor TMDs material represented by the TMDs material has strong advantages in optoelectronic device application due to the characteristics of excellent semiconductor performance (high on-off ratio and mobility), proper band gap width, high stability and the like. In addition, the molybdenum disulfide has good electrical, optical and mechanical properties and an extraordinary specific surface area, and paves a way for the molybdenum disulfide to be applied to the application fields of photoelectric sensors and the like. The single-layer molybdenum disulfide has a direct band gap of 1.8eV, and theoretical calculation shows that the mobility and the current on-off ratio can reach about 410cm at room temperature2Vs and 109Also, it isThe material is one of two-dimensional materials with the best known photoelectric performance, has good thermal stability and chemical stability, and is widely applied to novel nano electronic devices and photoelectric functional devices. However, MoS2There are also some drawbacks that are difficult to ignore, such as not having linear light effect, having higher dark current, etc. To compensate for MoS2These disadvantages, MoS applied to optical transceiver2Is required to be mixed with lithium niobate (LiNbO)3) A heterostructure is compositely constructed, and an electro-optic effect of lithium niobate is utilized to modulate an electro-optic signal, so that the electro-optic signal transmission with low bit error rate and high signal-to-noise ratio is realized.
The existing optical transceiver depends on silicon materials, the performance of the existing optical transceiver is limited by materials or structures, the existing optical transceiver is unstable and difficult to meet the increasing optical interconnection requirements, the existing optical transceiver is extremely difficult to meet the requirements of on-chip optical interconnection, and in addition, the silicon-based optical transceiver needs to strictly control the components of silicon, the process is complex, and the cost is extremely high.
Disclosure of Invention
Given the limitations of conventional optical transceiver devices due to the inherent properties of silicon-based materials and device architecture, it is extremely difficult to meet the requirements of on-chip optical interconnects. The invention provides a method for passing through MoS2/LiNbO3And the composite construction is combined with the advantages of the two to obtain the optical transceiver with excellent key parameters, such as high modulation speed, high signal-to-noise ratio, wide bandwidth, low bit error rate, low power consumption, small volume and the like, so as to meet the requirements of an optical communication network and optical interconnection.
The invention also provides a preparation method of the optical transceiver.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a first molybdenum sulfide/lithium niobate composite optical transceiver, which comprises single crystal LiNbO3Formed on single crystal LiNbO3Layered MoS of a surface2Layer of with MoS2A layer of partially overlapping p-type material, and an electrode disposed on the single crystal LiNbO3，MoS2Layer, p-type material and MoS2Over the overlapping portions of the layer and the p-type material.
In a preferred embodiment of the present invention, the electrode includes a modulating electrode,A signal electrode and a ground electrode; the modulating electrode and the MoS2The layers are connected, the signal electrode is connected with the p-type material layer, and the ground electrode is connected with the MoS2The layers and the p-type material overlap are connected.
Providing a first preparation method of the molybdenum sulfide/lithium niobate composite optical transceiver, which comprises the following steps:
step 1): LiNbO is reacted with3Placing the wafer in acetone or treating with acetone vapor for 5-15min to remove surface impurities;
step 2): LiNbO obtained in step 1)3A wafer defining a modulator region; mixing MoS2Fixed-point transfer of two-dimensional material to LiNbO3On a wafer;
the method comprises the following steps: 3): the p-type doped two-dimensional material is transferred to the substrate obtained in the step 2) in a fixed point manner, and the p-type doped two-dimensional material is mixed with MoS2Stacking the surfaces of the two-dimensional materials to form a PN heterojunction;
step 4): MoS of the substrate obtained in step 3)2PN heterojunction, LiNbO3Partially fabricating a patterned electrode mask;
step 5): evaporating and plating a layer of metal film on the patterned electrode mask obtained in the step 4);
step 6): placing the substrate obtained in the step 5) in an acetone solution at 50-80 ℃ for 10-20 min;
step 7): annealing the substrate obtained in the step 6) in a protective atmosphere for a period of time, cooling to room temperature, and taking out the substrate to obtain MoS2/LiNbO3A composite optical transceiver;
step 8): for MoS obtained in step 7)2/LiNbO3And the composite optical transceiver carries out packaging treatment.
In a preferred embodiment of the present invention, in step 5), the metal used for the metal film comprises Cr or Au, the Cr metal film has a thickness of 10 to 15nm, and the Au metal film has a thickness of 50 to 80 nm.
As a preferable scheme of the invention, in the step 7), the annealing treatment is carried out at the constant temperature of 150-180 ℃ for 20-30 min.
The invention also provides a second molybdenum sulfide/niobic acidThe lithium composite optical transceiver comprises a p-type silicon-based substrate, HfO2Layer, MoS2Layer of two-dimensional material, LiNbO3Crystalline thin film and electrode, the HfO2Partially covered with a silicon-based substrate, said MoS2Two-dimensional material layer and the HfO2Layer partially overlapped with the LiNbO3The crystalline film is arranged on the MoS2Two-dimensional material layer and HfO2On the overlapping portion of the layers.
As a preferable aspect of the present invention, the electrodes include a modulation electrode, a signal electrode, and a ground electrode; the modulating electrode and the MoS2Two-dimensional material layer and HfO2The layer overlapping part is connected with the ground electrode and the MoS2Two-dimensional material layer and HfO2The layer overlapping part is connected, and the signal electrode is directly connected with the silicon-based substrate.
Providing a preparation method of the second molybdenum sulfide/lithium niobate composite optical transceiver, wherein the preparation method comprises the following steps:
step 1): treating the p-type silicon-based substrate in acetone or acetone vapor for 5-15min to remove impurities on the surface;
step 2): manufacturing a layer of HfO on the p-type silicon-based substrate obtained in the step 1)2Film, HfO2The thickness of the film is 100 to 300nm, and a substrate is obtained;
step 3): mixing MoS2The two-dimensional material is transferred onto the substrate obtained in the step 2) in a fixed-point mode and is mixed with HfO2Film stacking to ensure MoS2The two-dimensional material is contacted with the p-type Si part to form a PN junction;
step 4): LiNbO is reacted with3Transferring to the substrate obtained in step 3) and mixing with MoS2The two-dimensional material regions are stacked to form a heterojunction region;
step 5): MoS of the substrate obtained in step 4)2PN heterojunction, LiNbO3Partially manufacturing a patterned electrode mask;
step 6): evaporating and plating a layer of metal film on the patterned electrode mask obtained in the step 5);
step 7): leaving a metal film having a shape of a modulation electrode on the substrate obtained in step 6);
step 8): annealing the substrate obtained in the step 7) in a protective atmosphere for a period of time, cooling to room temperature, and taking out the substrate to obtain MoS2/LiNbO3A composite optical transceiver;
step 9): for MoS obtained in step 8)2/LiNbO3And the composite optical transceiver carries out packaging treatment.
In a preferred embodiment of the present invention, the patterned electrode mask in step 5) is formed by photolithography or electron beam exposure.
In a preferred embodiment of the present invention, in step 6), the metal used for the metal mask includes Cr or Au, the Cr metal film has a thickness of 10 to 15nm, and the Au metal film has a thickness of 50 to 80 nm.
Compared with the prior art, the invention has the following beneficial effects:
1) the invention provides a MoS2/LiNbO3Composite optical transceiver using LiNbO3To enhance MoS2The photoelectric property of the two-dimensional material can reduce the process cost; using MoS compared to conventional modulators2/LiNbO3The insertion loss of the composite optical transceiver is reduced, the dependence on silicon is reduced, the silicon composition is not required to be controlled strictly, and the optical transceiver with low power consumption and small volume can be obtained only through a heterojunction stacking step;
2) the preparation method is simple, and the MoS2/LiNbO3The composite optical transceiver has simple structure and wide application prospect in the fields of semiconductors and photoelectric integration, so the composite optical transceiver effectively overcomes various defects in the prior art and has high industrial utilization value.
3) MoS used in the invention2Alternative WS for semiconductor materials2、MoSe2Other two-dimensional materials; likewise, the same effect can be achieved by adjusting the stacking order of each material.
Drawings
FIG. 1 is a schematic cross-sectional view of example 1.
FIG. 2 is a schematic plan view of example 1.
FIG. 3 is a schematic cross-sectional view of example 2.
FIG. 4 is a schematic plan view of example 2.
In fig. 1 and 2, 1. a lithium niobate wafer; 2.MoS2A two-dimensional material layer; a P-type doped material layer; 4a modulation electrode; 4b. a signal electrode; 4c. a ground electrode;
in fig. 3 and 4, 6. a p-type silicon-based substrate; HfO2A layer; MoS 82A two-dimensional material layer; 9. a lithium niobate thin film; 5a, a modulation electrode; 5b. a ground electrode; and 5c, a signal electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the invention, if not specifically indicated, all the raw materials can be purchased from the market, and all the used methods are the conventional methods.
Example 1
Referring to fig. 1 and 2, the present embodiment provides a molybdenum sulfide/lithium niobate composite optical transceiver device, including: lithium niobate wafer 1, layered MoS formed on surface of lithium niobate wafer 12Two-dimensional material layer 2, and MoS2A P-type doped material layer 3 with a partially overlapped two-dimensional material layer 2 and arranged on the lithium niobate wafer 1, MoS2Two-dimensional material layer 2, P-type doped material layer 3 and MoS2And electrodes above the overlapped part of the two-dimensional material layer 2 and the P-type doped material layer 3 comprise a modulation electrode 4a, a signal electrode 4b and a ground electrode 4c.
Modulating electrode 4a and MoS2The two-dimensional material layer 2 is connected, the signal electrode 4b is connected with the P-type doped material layer 3, and the ground electrode 4c is connected with MoS2The two-dimensional material layer 2 is connected with the overlapped part of the P-type doped material layer 3.
The preparation method of the molybdenum sulfide/lithium niobate composite optical transceiver comprises the following steps:
step 1: will be used commerciallyLiNbO3Placing the wafer in acetone or treating with acetone vapor for 5-15min to remove surface impurities;
step 2: in the LiNbO3A wafer defining a modulator region;
in the specific implementation process, LiNbO can be formed by photoetching and etching processes3The wafer forms a frame to define the modulator region;
step 2: MoS is transferred by one of wet method or dry method2Fixed-point transfer of two-dimensional material to LiNbO3On a wafer;
the method comprises the following steps: 3: the p-type doped two-dimensional material is transferred onto the substrate at a fixed point by one of wet transfer method or dry transfer method, and is mixed with MoS2Stacking the surfaces of the two-dimensional materials to form a PN heterojunction;
and 4, step 4: MoS on a substrate using photolithography or electron beam exposure2PN heterojunction, LiNbO3Partially fabricating a patterned electrode mask;
and 5: evaporating a layer of metal film on the photoresist mask by adopting an evaporation coating method, wherein the metal can be Cr or Au, the thickness of the Cr metal film is 10-15 nm, and the thickness of the Au metal film is 50-80 nm;
step 6: placing the substrate in an acetone solution at the temperature of 50-80 ℃ for 10-20 min, and removing the photoresist on the surface of the modulation electrode;
and 7: placing the substrate in a tube furnace, introducing Ar gas, and carrying out annealing treatment at constant temperature for 20-30min under the condition that the temperature in the furnace is raised to 150-180℃ to enhance the metal film and the MoS2Closing the tube furnace after the adhesiveness of the/p-type doped two-dimensional material heterojunction is achieved, taking out the substrate after the furnace temperature is reduced to room temperature, and obtaining MoS2/LiNbO3A composite optical transceiver;
and 8: MoS by microelectronic packaging process2/LiNbO3And the composite optical transceiver carries out packaging treatment.
Example 2
Referring to fig. 3 and 4, the present embodiment provides a molybdenum sulfide/lithium niobate composite optical transceiver device, including: comprising a p-type silicon-based substrate 6, HfO2Layer 7, MoS2Two-dimensional material layer 8, lithium niobate thin film9 and an electrode, said HfO2Layer 7 partially covering the p-type silicon-based substrate 6, MoS2Two-dimensional material layer 8 and HfO2The layer 7 is partially overlapped, and the lithium niobate thin film 9 is arranged on the MoS2Two-dimensional material layer 8 and HfO2On the overlapping part of the layer 7,
the electrodes include a modulation electrode 5a, a ground electrode 5b, a signal electrode 5c, a modulation electrode 5a and MoS2Two-dimensional material layer 8 and HfO2The overlapping part of the layer 7 is connected with the ground electrode 5c and the MoS2Two-dimensional material layer 8 and HfO2The layer 7 is connected with the overlapping part, and the signal electrode 5b is directly connected with the p-type silicon substrate 6.
The preparation method of the molybdenum sulfide/lithium niobate composite optical transceiver comprises the following steps:
step 1: treating the p-type silicon substrate in acetone or acetone vapor for 5-15min to remove impurities on the surface;
step 2: fabricating a layer of HfO on p-type silicon2Film, HfO2The film thickness is 100 to 300 nm;
and step 3: MoS is transferred by one of wet transfer method, dry transfer method and the like2Two-dimensional material is transferred to a silicon-based substrate at fixed point and is in contact with HfO2Film stacking to ensure MoS2The two-dimensional material is contacted with the p-type Si part to form a PN junction;
and 4, step 4: LiNbO prepared by adopting sol-gel method3And LiNbO is reacted with3Transferred to a Si-based substrate and reacted with MoS2The two-dimensional material regions are stacked to form a heterojunction region;
and 5: respectively applying the technologies of photoetching or electron beam exposure to MoS on a Si-based substrate2PN heterojunction, LiNbO3Partially manufacturing a patterned electrode mask;
step 6: evaporating a layer of metal film on the photoresist mask by adopting an evaporation coating method, wherein the metal can be Cr or Au, the thickness of the Cr metal film is 10-15 nm, and the thickness of the Au metal film is 50-80 nm;
and 7: a metal film with a modulation electrode shape is left on the silicon-based substrate by adopting dry transfer;
and 8: placing the substrate in a tube furnace, introducing Ar gas, and heating to 150-180 deg.C in the furnaceAnnealing treatment is carried out at constant temperature for 20-30min to strengthen the metal film and the MoS2Closing the tube furnace after the adhesiveness of the p-shaped doped two-dimensional material heterojunction is achieved, taking out the substrate after the furnace temperature is reduced to room temperature, and obtaining MoS2/LiNbO3A composite optical transceiver;
and step 9: MoS for silicon-based substrate by adopting microelectronic packaging technology2/LiNbO3The composite optical transceiver performs a packaging process.
The invention provides a MoS2/LiNbO3Composite optical transceiver using LiNbO3To enhance MoS2The photoelectric property of the two-dimensional material can reduce the process cost; using MoS compared to conventional modulators2/LiNbO3The insertion loss of the composite optical transceiver is reduced, the dependence on silicon is reduced, the silicon composition is not required to be controlled strictly, and the optical transceiver with low power consumption and small volume can be obtained only by a heterojunction stacking step.
The preparation method is simple, and the MoS2/LiNbO3The composite optical transceiver has simple structure and wide application prospect in the fields of semiconductors and photoelectric integration, so the composite optical transceiver effectively overcomes various defects in the prior art and has high industrial utilization value. MoS used in the invention2Alternative WS for semiconductor materials2、MoSe2Other two-dimensional materials; likewise, the same effect can be achieved by adjusting the stacking order of each material.
While the invention has been described with respect to a preferred embodiment, it will be understood by those skilled in the art that the foregoing and other changes, omissions and deviations in the form and detail thereof may be made without departing from the scope of this invention. Those skilled in the art can make various changes, modifications and equivalent arrangements, which are equivalent to the embodiments of the present invention, without departing from the spirit and scope of the present invention, and which may be made by utilizing the techniques disclosed above; meanwhile, any changes, modifications and variations of the above-described embodiments, which are equivalent to those of the technical spirit of the present invention, are within the scope of the technical solution of the present invention.
Claims (10)
1. The molybdenum sulfide/lithium niobate composite optical transceiver is characterized by comprising single crystal LiNbO3Formed on single crystal LiNbO3Layered MoS of a surface2Layer of with MoS2A layer of partially overlapping p-type material, and an electrode disposed on the single crystal LiNbO3，MoS2Layer, p-type material and MoS2Over the overlapping portions of the layer and the p-type material.
2. The molybdenum sulfide/lithium niobate composite optical transceiver of claim 1, wherein the electrodes comprise a modulation electrode, a signal electrode and a ground electrode; the modulating electrode and the MoS2The layers are connected, the signal electrode is connected with the p-type material layer, and the ground electrode is connected with the MoS2The layers and the p-type material overlap are connected.
3. The molybdenum sulfide/lithium niobate composite optical transceiver is characterized by comprising a p-type silicon-based substrate and HfO2Layer, MoS2Layer of two-dimensional material, LiNbO3Crystalline thin film and electrode, the HfO2Partially covered with a silicon-based substrate, said MoS2Two-dimensional material layer and the HfO2Layer partially overlapped with the LiNbO3The crystalline film is arranged on the MoS2Two-dimensional material layer and HfO2On the overlapping portion of the layers.
4. The molybdenum sulfide/lithium niobate composite optical transceiver of claim 3, wherein the electrodes comprise a modulation electrode, a signal electrode and a ground electrode; the modulating electrode and the MoS2Two-dimensional material layer and HfO2The layer overlapping part is connected with the ground electrode and the MoS2Two-dimensional material layer and HfO2The layer overlapping part is connected, and the signal electrode is directly connected with the silicon-based substrate.
5. A method for manufacturing the molybdenum sulfide/lithium niobate composite optical transceiver device of claim 1 or 2, comprising the steps of:
step 1): LiNbO is reacted with3Placing the wafer in acetone or treating with acetone vapor for 5-15min to remove surface impurities;
step 2): LiNbO obtained in step 1)3A wafer defining a modulator region; mixing MoS2Fixed-point transfer of two-dimensional material to LiNbO3On a wafer;
the method comprises the following steps: 3): the p-type doped two-dimensional material is transferred to the substrate obtained in the step 2) in a fixed point manner, and the p-type doped two-dimensional material is mixed with MoS2Stacking the surfaces of the two-dimensional materials to form a PN heterojunction;
step 4): MoS of the substrate obtained in step 3)2PN heterojunction, LiNbO3Partially fabricating a patterned electrode mask;
step 5): evaporating and plating a layer of metal film on the patterned electrode mask obtained in the step 4);
step 6): placing the substrate obtained in the step 5) in an acetone solution at 50-80 ℃ for 10-20 min;
step 7): annealing the substrate obtained in the step 6) in a protective atmosphere for a period of time, cooling to room temperature, and taking out the substrate to obtain MoS2/LiNbO3A composite optical transceiver;
step 8): for MoS obtained in step 7)2/LiNbO3And the composite optical transceiver carries out packaging treatment.
6. The method as claimed in claim 5, wherein in step 5), the metal used in the metal film comprises Cr or Au, the Cr metal film has a thickness of 10 to 15nm, and the Au metal film has a thickness of 50 to 80 nm.
7. The method as claimed in claim 5, wherein in step 7), the annealing process is performed at 150-180 ℃ for 20-30 min.
8. A method for manufacturing the molybdenum sulfide/lithium niobate composite optical transceiver device of claim 3 or 4, comprising the steps of:
step 1): treating the p-type silicon-based substrate in acetone or acetone vapor for 5-15min to remove impurities on the surface;
step 2): manufacturing a layer of HfO on the p-type silicon-based substrate obtained in the step 1)2Film, HfO2The thickness of the film is 100 to 300nm, and a substrate is obtained;
step 3): mixing MoS2The two-dimensional material is transferred onto the substrate obtained in the step 2) in a fixed-point mode and is mixed with HfO2Film stacking to ensure MoS2The two-dimensional material is contacted with the p-type Si part to form a PN junction;
step 4): LiNbO is reacted with3Transferring to the substrate obtained in step 3) and mixing with MoS2The two-dimensional material regions are stacked to form a heterojunction region;
step 5): MoS of the substrate obtained in step 4)2PN heterojunction, LiNbO3Partially manufacturing a patterned electrode mask;
step 6): evaporating and plating a layer of metal film on the patterned electrode mask obtained in the step 5);
step 7): leaving a metal film having a shape of a modulation electrode on the substrate obtained in step 6);
step 8): annealing the substrate obtained in the step 7) in a protective atmosphere for a period of time, cooling to room temperature, and taking out the substrate to obtain MoS2/LiNbO3A composite optical transceiver;
step 9): for MoS obtained in step 8)2/LiNbO3And the composite optical transceiver carries out packaging treatment.
9. The method of claim 8, wherein in step 5), the patterned electrode mask is formed by photolithography or electron beam exposure.
10. The method as claimed in claim 8, wherein in step 6), the metal used for the metal mask includes Cr or Au, the Cr metal film has a thickness of 10 to 15nm, and the Au metal film has a thickness of 50 to 80 nm.
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