CN113471656B - Waveguide device and preparation method thereof - Google Patents
Waveguide device and preparation method thereof Download PDFInfo
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- CN113471656B CN113471656B CN202110604680.8A CN202110604680A CN113471656B CN 113471656 B CN113471656 B CN 113471656B CN 202110604680 A CN202110604680 A CN 202110604680A CN 113471656 B CN113471656 B CN 113471656B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention discloses a waveguide device and a preparation method thereof, relates to the technical field of semiconductor manufacturing, and aims to solve the technical problem that when a silicon nitride film grows in a large area under the condition of thicker thickness of the silicon nitride film, the silicon nitride film has larger stress and is easy to generate cracks, so that the performance of the waveguide device is influenced. The method comprises the following steps: providing a substrate; a second dielectric layer having at least one region trench is formed on the first dielectric layer. And when the thickness of the second dielectric layer is larger than the preset thickness, the second dielectric layer comprises a plurality of second sub-dielectric layers which are formed for multiple times. Wherein, the second dielectric layer is a silicon nitride dielectric layer, and forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, sequentially carrying out first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, and forming a waveguide structure in a waveguide device region of the second dielectric layer to obtain a waveguide device.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a waveguide device and a preparation method thereof.
Background
At present, silicon nitride is considered to be one of ideal waveguide materials in material selection for waveguide preparation due to the advantages of low loss, high nonlinearity and the like. When the silicon nitride film is formed, the silicon nitride film deposited by LPCVD has good quality and low waveguide loss.
However, in practice, when the silicon nitride film is thick, the silicon nitride film has a different thermal expansion coefficient from the substrate, and when the silicon nitride film is grown in a large area, the silicon nitride film has a large stress and is likely to crack, thereby affecting the performance of the waveguide device.
Disclosure of Invention
The invention aims to provide a waveguide device and a preparation method thereof, which are used for solving the technical problem that the performance of the waveguide device is influenced because a silicon nitride film has larger stress and is easy to generate cracks when the silicon nitride film grows in a large area under the condition that the silicon nitride film is thicker.
Based on this, in a first aspect, the present invention discloses a method for manufacturing a waveguide device, comprising: providing a substrate; the base comprises a substrate and a first dielectric layer formed on the substrate. A second dielectric layer having at least one region trench is formed on the first dielectric layer. And when the thickness of the second dielectric layer is larger than the preset thickness, the second dielectric layer comprises a plurality of second sub-dielectric layers which are formed for multiple times. Wherein, the second dielectric layer is a silicon nitride dielectric layer, and forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove. And forming a waveguide structure in the waveguide device region of the second dielectric layer to obtain the waveguide device. And the position of the waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove.
Under the condition of adopting the technical scheme, when the waveguide device is prepared, the second dielectric layer comprises a plurality of second sub-dielectric layers which are formed for many times under the condition that the thickness of the second dielectric layer is larger than the preset thickness. Wherein, the second dielectric layer is a silicon nitride dielectric layer, and forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove. Based on the above, it can be seen that, when the second dielectric layer with a larger thickness is formed, the second dielectric material layer is deposited for multiple times, and the second dielectric layer is formed through multiple times of the first patterning treatment and the thermal treatment. Because the annealing treatment is carried out after the first patterning treatment is carried out on each layer of the second dielectric material layer, extra cracks can not be caused during annealing, and the technical problem that the performance of a waveguide device is influenced due to the fact that the second dielectric layer has large stress and cracks are easy to generate when the second dielectric layer grows in a large area under the condition that the thickness of the second dielectric layer is thick can be solved.
In a second aspect, the present invention discloses a waveguide device comprising: a substrate; the base comprises a substrate and a first dielectric layer formed on the substrate. A second dielectric layer which is formed on the first dielectric layer and is provided with at least one region groove and a waveguide structure, wherein the second dielectric layer is a silicon nitride dielectric layer, and the position of a waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove; when the thickness of the second medium layer is larger than the preset thickness, the second medium layer comprises a plurality of second sub-medium layers formed for multiple times; wherein forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove.
Under the condition of adopting the technical scheme, the beneficial effect of the waveguide device provided by the invention is the same as that of the preparation method of the waveguide device in the technical scheme, and the details are not repeated here.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first dielectric material layer formed on a substrate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a second dielectric layer formed on a substrate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure for forming a first dielectric material layer on a substrate according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram illustrating a first sub-dielectric layer formed on a substrate according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a second dielectric material layer formed on a substrate according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a second sub-dielectric layer formed on a substrate according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a waveguide device formed on a second dielectric layer according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram after a third dielectric layer covering a waveguide device is formed according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Various schematic diagrams of embodiments of the invention are shown in the drawings, which are not drawn to scale. Wherein certain details are exaggerated and possibly omitted for clarity of understanding. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In addition, in the present invention, directional terms such as "upper" and "lower" are defined with respect to a schematically placed orientation of components in the drawings, and it is to be understood that these directional terms are relative concepts, which are used for relative description and clarification, and may be changed accordingly according to the change of the orientation in which the components are placed in the drawings.
In the present invention, unless expressly stated or limited otherwise, the term "coupled" is to be interpreted broadly, e.g., "coupled" may be fixedly coupled, detachably coupled, or integrally formed; may be directly connected or indirectly connected through an intermediate.
At present, silicon nitride is considered to be one of ideal waveguide materials in material selection for waveguide preparation due to the advantages of low loss, high nonlinearity and the like. When the silicon nitride film is formed, the silicon nitride film deposited by LPCVD has good quality and low waveguide loss.
However, in practice, when the silicon nitride film is thick, the silicon nitride film has a different thermal expansion coefficient from the substrate, and when the silicon nitride film is grown in a large area, the silicon nitride film has a large stress and is likely to crack, thereby affecting the performance of the waveguide device.
Based on this, the invention discloses a preparation method of a waveguide device, which comprises the following steps:
referring to fig. 1, a substrate is provided. The base comprises a substrate 101.
Specifically, the substrate 101 may be a silicon substrate, a germanium substrate, a silicon on insulator substrate, or the like. In practice, the substrate of a suitable material may be selected according to specific requirements, which is not limited in the embodiment of the present invention.
Referring to fig. 2, the base 100 further includes a first dielectric layer 102 formed on the substrate 101.
Specifically, the first dielectric layer 102 may be formed as a cladding layer on the surface of the substrate 101. In this case, the presence of the first dielectric layer 102 may reduce optical loss in subsequently formed waveguide structures during the propagation of optical signals. For example, the first dielectric layer 102 may be made of silicon dioxide or a high polymer material.
In practice, the first dielectric layer 102 may be formed on the substrate 101 by a thermal oxidation process, a CVD (Chemical Vapor Deposition) process, or a PVD (Physical Vapor Deposition) process. Illustratively, the first dielectric layer may be a silica layer having a thickness of 3 microns to 7 microns to meet the requirements of the waveguide and the optical device for the thickness of the lower cladding layer.
Referring to fig. 3, a second dielectric layer 200 having at least one region trench 300 is formed on the first dielectric layer 102.
In order to avoid that the second dielectric layer has a large stress and is prone to crack when the second dielectric layer is grown in a large area under the condition that the thickness of the second dielectric layer is thick when the second dielectric layer having at least one region groove 300 is actually prepared, so that the performance of the waveguide device is affected, the second dielectric layer in the embodiment of the invention includes a plurality of second sub-dielectric layers formed for many times.
Specifically, when the thickness of the second dielectric layer is greater than the preset thickness, the second dielectric layer includes a plurality of second sub-dielectric layers formed multiple times. Wherein the predetermined thickness may be 300 nm. That is, after the thickness of the second dielectric layer is greater than 300nm, due to the difference between the second sub-dielectric layer and the substrate material, when the substrate is grown in a large area, a large stress exists, and cracks are easily generated, thereby affecting the performance of the device.
The second dielectric layer is a silicon nitride dielectric layer.
Illustratively, referring to fig. 4-5, forming the second sub-dielectric layers each includes: a layer of second dielectric material 201 is deposited over the first dielectric layer 102. At this time, the material of the second dielectric material layer is a silicon nitride material.
The thickness of the second dielectric material layer deposited each time is 150 nm-300 nm, so that the thickness of the second dielectric layer obtained each time does not exceed the preset thickness, and the second dielectric layer is not too thin, and the process time and the process complexity for forming the second dielectric layer are increased.
Referring to fig. 5, a first patterning process and a thermal process are sequentially performed on the second dielectric material layer to obtain a second sub-dielectric layer 202, and at this time, a sub-region groove 301 is formed at a position of the second sub-dielectric layer 202 corresponding to the region groove.
The first patterning process is used to remove the second dielectric material layer at the corresponding position of at least one region groove to form a sub-region groove 301.
As can be seen from the above description, the sub-area slots 301 and the area slots 300 have the same positions. Wherein the position of the area groove 300 is consistent with the position of the subsequent scribing street.
After the second sub-dielectric layer is formed, the first patterning treatment is performed on the second sub-dielectric layer, so that the second sub-dielectric layer on the substrate is partitioned, a part of stress is released, and the second sub-dielectric layer is prevented from shrinking to generate cracks after annealing.
The heat treatment may be a high temperature annealing treatment, wherein the temperature of the high temperature annealing may be 1050 ℃ to 1200 ℃. The heat treatment releases hydrogen ions in the second sub-dielectric layer, so that the waveguide loss is reduced, and the film stress is further released.
It can be understood that when the thickness of the second dielectric layer is larger, a plurality of sub-dielectric layers need to be formed multiple times in a manner of forming the second sub-dielectric layer to obtain the second dielectric layer.
Illustratively, referring to fig. 6 and 7, the method for forming the second sub-dielectric layer may be:
referring to fig. 6, a second dielectric material layer 203 is deposited on the second sub-dielectric layer 202. Since the second sub-dielectric layer 202 formed previously has the region trenches 301 therein, at this time, a portion of the second dielectric material layer 203 is formed in the sub-region trenches 301.
Referring to fig. 7, a first patterning process and a thermal process are performed on the second dielectric material layer 203 to remove a portion of the second dielectric material layer 203 in the sub-area trenches 301, so as to obtain a second sub-dielectric layer 204 and sub-area trenches 302.
As can be appreciated. Here the sub-region slots 302 are in the same position as the region slots 300. Here, the processing method of the first patterning processing and the processing method of the thermal processing are the same as those of the second sub-dielectric layer, and are not described herein again.
It can be understood that, if the thickness of the two second sub-dielectric layers obtained by depositing the second dielectric material layer twice is still smaller than the preset thickness of the second dielectric layer, the above step of forming the second sub-dielectric layers may be repeated for multiple times until the thickness of the second dielectric layer reaches the preset thickness.
In the embodiment of the invention, the thickness of the second dielectric layer is 350 nm-1000 nm, and the thickness of each sub-dielectric layer is 150 nm-300 nm.
Illustratively, forming a second dielectric layer having at least one region trench on the first dielectric layer comprises:
and determining the corresponding thickness of each second sub-dielectric layer according to the thickness of the second dielectric layer.
Depositing the second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer with corresponding thickness;
and sequentially preparing the second sub-medium layers with corresponding thicknesses from bottom to top to form a plurality of second sub-medium layers which are stacked from bottom to top, so as to obtain the second medium layer with at least one region groove.
As a specific example, when the thickness of the second dielectric layer is 450nm and the thickness of the second dielectric material layer deposited each time is 150nm, three times of deposition and first patterning processes are required to form the second dielectric layer. In a specific process, if the second dielectric layer does not reach the preset thickness, annealing the second sub-dielectric layer is needed; and if the second dielectric layer reaches the preset thickness, annealing the second dielectric layer is not needed.
Specifically, the position of the area groove coincides with the position of the subsequent scribe lane, and the width of the area groove is 50 μm or more. As for the upper limit of the width of the groove in the region, it may be set according to a specific structure or requirement, and this is not particularly limited in the embodiment of the present invention.
After forming a second dielectric layer having at least one region groove on the first dielectric layer, the method of manufacturing a waveguide device further includes: and forming a waveguide structure in the waveguide device region of the second dielectric layer to obtain the waveguide device. And the position of the waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove.
Specifically, referring to fig. 8, a waveguide structure 400 is formed in the waveguide device region of the second dielectric layer, resulting in a waveguide device.
Forming the waveguide structure 400 in the waveguide device region of the second dielectric layer may include: and forming a photoresist pattern in the waveguide device region of the second dielectric layer according to the structure of the waveguide device, and etching the waveguide device region of the second dielectric layer by taking the photoresist pattern as a mask to form a waveguide structure.
In order to relieve the stress created by forming the waveguide device, the waveguide device is heat treated to relieve some of the stress. Here, the heat treatment performed on the waveguide device is a high-temperature annealing treatment at 1050-.
In embodiments of the present invention, the final anneal of the waveguide must be performed after the waveguide structure is formed. Because annealing is carried out firstly, and then photoetching and etching are carried out, large-area cracks are easy to appear.
In practice, when the number of the region grooves is two, the waveguide structure is located between two of the region grooves.
Referring to fig. 9, after the heat treatment is performed on the waveguide device, the method for manufacturing a waveguide device according to the embodiment of the present invention further includes: a third dielectric layer 500 is formed overlying the waveguide device. The third dielectric layer is formed as a cladding layer on the front and back surfaces of the waveguide device.
In practice, the third dielectric layer may be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) to further control the stress of the waveguide device.
Illustratively, the third dielectric layer may be a silicon dioxide layer or a high polymer material.
Based on the above description, in the preparation method of the waveguide device provided by the embodiment of the invention, when the waveguide device is prepared, under the condition that the thickness of the second dielectric layer is greater than the preset thickness, the second dielectric layer includes a plurality of second sub-dielectric layers formed multiple times. Wherein, the second dielectric layer is a silicon nitride dielectric layer, and forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove. Based on this, it can be seen that, in the embodiment of the present invention, when the second dielectric layer with a larger thickness is formed, the second dielectric material layer is deposited multiple times, and the second dielectric layer is formed through multiple times of the first patterning and annealing. Because the annealing treatment is carried out after the first patterning treatment is carried out on each layer of the second dielectric material layer, extra cracks can not be caused during annealing, and the technical problem that the performance of a waveguide device is influenced due to the fact that the second dielectric layer has large stress and cracks are easy to generate when the second dielectric layer grows in a large area under the condition that the thickness of the second dielectric layer is thick can be solved.
The embodiment of the invention also discloses a waveguide device, which comprises: a substrate; the base comprises a substrate and a first dielectric layer formed on the substrate. A second dielectric layer having at least one region groove and a waveguide structure formed on the first dielectric layer, wherein the position of the waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove; when the thickness of the second medium layer is larger than the preset thickness, the second medium layer comprises a plurality of second sub-medium layers formed for multiple times; wherein forming each second sub-dielectric layer comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove.
The beneficial effects of the waveguide device provided by the embodiment of the invention are the same as those of the preparation method of the waveguide device in the technical scheme, and are not repeated here.
Compared with the prior art, the beneficial effects of the waveguide device provided by the embodiment of the invention are the same as the beneficial effects of the manufacturing method of the waveguide device provided by the embodiment, and the details are not repeated here.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus embodiment, since it is substantially similar to the method embodiment, it is relatively simple to describe, and reference may be made to some descriptions of the method embodiment for relevant points.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method of making a waveguide device, comprising:
providing a substrate; the substrate comprises a substrate and a first dielectric layer formed on the substrate;
forming a second dielectric layer with at least one region groove on the first dielectric layer; when the thickness of the second dielectric layer is larger than the preset thickness, the second dielectric layer comprises a plurality of second sub-dielectric layers which are formed for multiple times; the second dielectric layers are silicon nitride dielectric layers, and forming each second sub-dielectric layer comprises: depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove;
forming a waveguide structure in a waveguide device region of the second dielectric layer to obtain the waveguide device; and the position of the waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove.
2. The method of claim 1, wherein forming a second dielectric layer having at least one region trench on the first dielectric layer comprises:
determining the corresponding thickness of each second sub-dielectric layer according to the thickness of the second dielectric layer;
depositing the second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain a second sub-dielectric layer with corresponding thickness;
and sequentially preparing the second sub-medium layers with corresponding thicknesses from bottom to top to form a plurality of second sub-medium layers which are stacked from bottom to top, so as to obtain the second medium layer with at least one region groove.
3. The method of claim 2, wherein the second dielectric layer has a thickness of 350nm to 1000nm, and each of the second sub-dielectric layers has a thickness of 150nm to 300 nm.
4. The method of claim 1, wherein the groove width of the region groove is 50 μm or more.
5. The method of claim 1, wherein the substrate is a silicon substrate, a germanium substrate or a silicon germanium substrate, and the first dielectric layer is a silicon dioxide layer or a high polymer material.
6. The method of claim 1, wherein the heat treatment is performed at a temperature of 1050 ℃ to 1200 ℃.
7. The method of any of claims 1 to 6, wherein after forming a waveguide structure in the waveguide device region of the second dielectric layer to obtain the waveguide device, the method further comprises:
heat treating the waveguide device;
and forming a third dielectric layer covering the waveguide device.
8. The method of claim 7, wherein forming a third dielectric layer overlying the waveguide comprises: forming the third dielectric layer covering the waveguide device by adopting a plasma chemical vapor deposition process; and/or the presence of a gas in the gas,
the third dielectric layer is a silicon dioxide layer or a high polymer material.
9. A method of fabricating a waveguide device according to any one of claims 1 to 6, wherein when the number of the region grooves is two, the waveguide structure is located between the two region grooves.
10. A waveguide device, comprising: a substrate; the substrate comprises a substrate and a first dielectric layer formed on the substrate;
a second dielectric layer which is formed on the first dielectric layer and is provided with at least one region groove and a waveguide structure, wherein the second dielectric layer is a silicon nitride dielectric layer, and the position of a waveguide device region in the second dielectric layer is not overlapped with the position of the at least one region groove; when the thickness of the second dielectric layer is larger than the preset thickness, the second dielectric layer comprises a plurality of second sub-dielectric layers which are formed for multiple times; wherein forming each of the second sub-dielectric layers comprises: and depositing a second dielectric material layer on the first dielectric layer, and sequentially performing first patterning treatment and heat treatment on the second dielectric material layer to obtain the second sub-dielectric layer, wherein the first patterning treatment is used for removing the second dielectric material layer at the corresponding position of the at least one region groove.
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