CN113471308A - Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same - Google Patents
Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same Download PDFInfo
- Publication number
- CN113471308A CN113471308A CN202110902743.8A CN202110902743A CN113471308A CN 113471308 A CN113471308 A CN 113471308A CN 202110902743 A CN202110902743 A CN 202110902743A CN 113471308 A CN113471308 A CN 113471308A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- heterojunction
- grid
- main
- conductive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 22
- 230000001070 adhesive effect Effects 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000001723 curing Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000013035 low temperature curing Methods 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000003854 Surface Print Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a heterojunction solar cell without a main grid and a laminated assembly prepared by the heterojunction solar cell. The current collection of the solar cell without the main gate heterojunction and the interconnection between the solar cells are completed by the conductive adhesive positioned between the solar cells when the laminated assembly is prepared, so that the silver paste consumption of the heterojunction solar cell is reduced, and the cost of the laminated assembly is greatly reduced.
Description
Technical Field
The invention relates to the field of solar cells and components, in particular to a solar cell without a main grid heterojunction and a laminated tile component prepared by the solar cell.
Background
The conversion efficiency of the solar cell is always the core problem of the development of the photovoltaic industry technology, the heterojunction solar cell has high conversion efficiency, relatively simple production flow and low process temperature, can adapt to flaking, and is considered to be the next generation solar cell technology in the industry. One practical problem faced by the large-scale industrialization of the heterojunction solar cell is that the manufacturing cost is higher than that of the prior art, and besides the higher cost of the manufacturing equipment of the heterojunction solar cell, the high cost and the large consumption of the low-temperature silver paste used by the heterojunction solar cell are also main reasons. The existing heterojunction solar cell grid line design comprises a fine grid structure and a main grid structure, the fine grid structure is used for collecting current generated by the heterojunction solar cell, the main grid structure is used for collecting the current and interconnecting battery pieces, but the consumption of silver paste is increased due to the existence of the fine grid structure and the main grid structure, and the cost is high.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a structural design scheme of a solar cell without a main gate heterojunction and a laminated tile assembly prepared by the solar cell. The heterojunction solar cell without the main grid only needs to print the thin grid lines to collect current, and does not need the main grid lines of the traditional solar cell. The current collection of the heterojunction solar cell without the main grid and the interconnection between the cell pieces are completed by the conductive adhesive positioned between the solar cells when the laminated assembly is prepared, so that the consumption of low-temperature silver paste of the heterojunction solar cell is reduced, and the cost of the laminated assembly is greatly reduced.
The invention provides a main-grid-free heterojunction solar cell and a stack tile assembly prepared by the same, which comprise the following technical scheme:
a heterojunction solar cell without a main grid and a laminated tile assembly prepared by the heterojunction solar cell comprise the heterojunction solar cell and grid lines printed on the front surface and the back surface of the heterojunction solar cell. The method is characterized in that: the surface grid line only contains the thin grid line of width between 15~80um, does not contain any width and is greater than 80um and more than the main grid line.
The current collection of the solar cell without the main grid heterojunction and the interconnection among the cell pieces are completed by conductive adhesive positioned among the solar cells when the laminated tile assembly is prepared.
The thin grid lines on the surface of the solar cell without the main grid heterojunction are formed by low-temperature silver paste screen printing and then low-temperature curing, and the grid line spacing is 1-5 mm.
The conductive adhesive for collecting current and interconnecting the cells in the preparation process of the solar cell stack assembly without the main grid heterojunction is one of conductive adhesives of organic silicon, epoxy, acrylic acid or polyurethane systems, and the conductive powder used by the conductive adhesive is one of silver powder or silver-coated copper powder.
The conductive adhesive which collects current and interconnects the solar cells in the preparation process of the solar cell stack assembly without the main grid heterojunction is coated on the designated position on the surface of the heterojunction solar cell by spraying or printing and is fully contacted with the transparent conductive layer on the surface of the heterojunction solar cell, the conductive adhesive bonds and fixes the upper heterojunction solar cell and the lower heterojunction solar cell in the curing process, and a conductive passage is formed between the two heterojunction solar cells.
The implementation of the invention comprises the following technical effects:
the solar cell without the main grid heterojunction and the laminated tile assembly prepared by the solar cell optimize the design of grid lines of the cell and the structural design of the assembly by utilizing the difference between the heterojunction and the traditional homojunction solar cell. Different from the traditional homojunction solar cell, the surface of the heterojunction solar cell is provided with a transparent passivation layer (TCO) capable of conducting electricity. The solar cell is fixed and conducted by the aid of the laminated solar module through the conductive adhesive, and for a traditional homojunction solar cell, the conductive adhesive is required to be in contact with a main grid line on the surface of the solar cell to achieve current transmission. However, due to the existence of the transparent conductive passivation layer on the surface of the heterojunction solar cell, the heterojunction solar cell can be interconnected and conducted by utilizing the tiling technology under the condition without a main grid, so that the silver paste consumption of the heterojunction solar cell can be greatly reduced, and the manufacturing cost of the heterojunction solar cell is reduced.
Drawings
Fig. 1 is a schematic diagram of a front grid line of a solar cell without a main grid heterojunction.
Fig. 2 is a schematic diagram of a stack-tile interconnection structure of a solar cell without a main gate heterojunction.
Detailed Description
The present invention will be described in detail with reference to the following examples, which are intended to facilitate the understanding of the present invention and should not be construed as limiting in any way.
The heterojunction solar cell and the laminated assembly prepared from the same provided by the embodiment of the invention comprise the heterojunction solar cell and grid lines printed on the front surface and the back surface of the heterojunction solar cell, and the solar cell can be prepared into the solar assembly in a laminated manner. The following describes the preparation method of the above-mentioned solar cell without main gate heterojunction and the prepared stack module with various embodiments.
Example 1
In the embodiment, 166mm N-type silicon wafers are used as substrates, the N-type silicon wafers are firstly cleaned and textured, then the intrinsic layer and the doping layer are uniformly deposited on the two sides of the N-type silicon wafers in vacuum through the PECVD technology, and then the transparent conductive passivation layer (TCO) is continuously deposited on the surfaces of the doping layers. And finally, printing 110 fine grids which are uniformly distributed on the front surface of the battery piece by using a screen printer, wherein the width of each fine grid is 35 mu m, and the intervals between grid lines are 1.5 mm. The back of the cell piece is printed with 150 fine grids which are uniformly distributed, the width of each fine grid is 30 mu m, and the intervals between the grid lines are 1.1 mm. The heterojunction solar cell without the main grid is prepared and then cut into cell pieces according to the design of a module model, the 166mm cell pieces are vertically cut into 6 equal parts along the direction of a vertical thin grid line in the embodiment, an organic silicon silver coated copper conductive adhesive is uniformly printed or sprayed in 1mm of the edge of each cell piece, then another cell piece is laid, the positive and negative of the cell pieces are connected, and the overlapping area is controlled to be 0.5-1.5 mm. And then heating and curing to ensure that the conductive adhesive firmly bonds the two adjacent battery pieces and form a conductive path between the two electromagnetic pieces. And connecting a certain number of battery plates in series according to the design of the module type to form a string, and then carrying out series-parallel connection on the string according to the requirement, preferably using the traditional packaging and laminating process to prepare the heterojunction shingled solar module.
Example 2
In the embodiment, a 188mm N-type silicon wafer is used as a substrate, the N-type silicon wafer is firstly cleaned and textured, an intrinsic layer and a doping layer are uniformly deposited on the two sides of the N-type silicon wafer in vacuum through a PECVD (plasma enhanced chemical vapor deposition) technology, and then a transparent conductive passivation layer (TCO) is continuously deposited on the surface of the doping layer. And finally, printing 130 uniformly distributed fine grids on the front surface of the battery piece by using a screen printer, wherein the width of each fine grid is 40 mu m, and the intervals between grid lines are 1.45 mm. 170 fine grids which are uniformly distributed are printed on the back surface of the cell piece, the width of each fine grid is 30 mu m, and the intervals between grid lines are 1.1 mm. After the main-grid-free heterojunction solar cell is prepared, the cell is cut according to the design of a module model, the 188mm cell is vertically cut into 7 equal parts along the direction perpendicular to the fine grid line, another cell is laid after epoxy pure silver conductive adhesive is uniformly printed or sprayed within 0.8mm of the edge of each cell, the cell is connected in a positive-negative mode, and the overlapping area is controlled to be 0.5-1.5 mm. And then heating and curing to ensure that the conductive adhesive firmly bonds the two adjacent battery pieces and form a conductive path between the two electromagnetic pieces. And connecting a certain number of battery plates in series according to the design of the module type to form a string, and then carrying out series-parallel connection on the string according to the requirement, preferably using the traditional packaging and laminating process to prepare the heterojunction shingled solar module.
Example 3
In the embodiment, an N-type silicon wafer with the thickness of 210mm is used as a substrate, the N-type silicon wafer is firstly cleaned and textured, an intrinsic layer and a doping layer are uniformly deposited on the two sides of the N-type silicon wafer in vacuum through a PECVD (plasma enhanced chemical vapor deposition) technology, and then a transparent conducting passivation layer (TCO) is continuously deposited on the surface of the doping layer. And finally, uniformly distributing 180 fine grids on the front surface of the battery piece by using a screen printer, wherein the width of each fine grid is 35 mu m, and the intervals between grid lines are 1.17 mm. 210 fine grids which are uniformly distributed are printed on the back surface of the cell piece, the width of each fine grid is 30 mu m, and the intervals between the grid lines are 1.0 mm. After the main-grid-free heterojunction solar cell is prepared, the cell is cut according to the design of a module model, the 210mm cell is vertically cut into 9 equal parts along the direction of a vertical thin grid line in the embodiment, another cell is laid after epoxy pure silver conductive adhesive is uniformly printed or sprayed within 1.2mm of the edge of each cell, the cell is connected in a positive-negative mode, and the overlapping area is controlled to be 0.5-1.5 mm. And then heating and curing to ensure that the conductive adhesive firmly bonds the two adjacent battery pieces and form a conductive path between the two electromagnetic pieces. And connecting a certain number of battery plates in series according to the design of the module type to form a string, and then carrying out series-parallel connection on the string according to the requirement, preferably using the traditional packaging and laminating process to prepare the heterojunction shingled solar module.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (5)
1. The utility model provides a no main grid heterojunction solar cell and stack tile subassembly of preparation, includes heterojunction solar cell and positive and negative surface printing's grid line, its characterized in that: the surface grid line only contains the thin grid line of width between 15~80um, does not contain any width and is greater than 80um and more than the main grid line.
2. The solar cell without the main gate heterojunction and the stack module prepared by the solar cell as claimed in claim 1, wherein: current collection of the solar cell without the main grid heterojunction and interconnection among the cells are completed through conductive adhesive positioned among the solar cells when the laminated tile assembly is prepared.
3. The solar cell without the main gate heterojunction and the stack module prepared by the solar cell as claimed in claim 1, wherein: the surface grid lines are formed by low-temperature silver paste screen printing and then low-temperature curing, and the grid line spacing is 1-5 mm.
4. The stack module made of a solar cell without a main gate heterojunction as claimed in claim 2, wherein: the conductive adhesive for collecting current and interconnecting the battery pieces is one of conductive adhesives of organosilicon, epoxy, acrylic acid or polyurethane systems, and the conductive powder used by the conductive adhesive is one of silver powder or silver-coated copper powder.
5. The solar cell without the main gate heterojunction and the stack module prepared by the solar cell as claimed in claim 2, wherein: the conductive adhesive is coated on the designated position on the surface of the heterojunction solar cell through spraying or printing and is fully contacted with the transparent conductive layer on the surface of the heterojunction solar cell, the upper and lower heterojunction solar cells are bonded and fixed by the conductive adhesive in the curing process, and a conductive passage is formed between the two heterojunction solar cells.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110902743.8A CN113471308A (en) | 2021-08-10 | 2021-08-10 | Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110902743.8A CN113471308A (en) | 2021-08-10 | 2021-08-10 | Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113471308A true CN113471308A (en) | 2021-10-01 |
Family
ID=77867565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110902743.8A Pending CN113471308A (en) | 2021-08-10 | 2021-08-10 | Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113471308A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114122164A (en) * | 2021-11-24 | 2022-03-01 | 中国华能集团清洁能源技术研究院有限公司 | Laminated cell structure and preparation method |
-
2021
- 2021-08-10 CN CN202110902743.8A patent/CN113471308A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114122164A (en) * | 2021-11-24 | 2022-03-01 | 中国华能集团清洁能源技术研究院有限公司 | Laminated cell structure and preparation method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9911875B2 (en) | Solar cell metallization | |
KR100973028B1 (en) | Scalable photovoltaic cell and solar panel manufacturing with improved wiring | |
CN106229327A (en) | A kind of flexible large area perovskite solar module and preparation method thereof | |
WO2015106167A2 (en) | Module fabrication of solar cells with low resistivity electrodes | |
CN111584669B (en) | Silicon heterojunction SHJ solar cell and preparation method thereof | |
WO2014110520A1 (en) | Module fabrication of solar cells with low resistivity electrodes | |
CN104465892A (en) | Method for manufacturing photovoltaic modules interconnected on same sides of adjacent solar cells in solar cell string | |
CN213340395U (en) | Metal mesh grid interconnection structure | |
JP2014103259A (en) | Solar cell, solar cell module, and method of manufacturing the same | |
CN113178501A (en) | Flexible photovoltaic module and preparation method thereof | |
JP2014157874A (en) | Solar battery module and method of manufacturing the same | |
CN113013294A (en) | HJT heterojunction battery based on repeated printing and preparation method thereof | |
CN112382685A (en) | Double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and preparation method thereof | |
CN216084904U (en) | Multi-main-grid back-contact heterojunction solar cell | |
CN113471308A (en) | Main-grid-free heterojunction solar cell and laminated tile assembly prepared by same | |
CN102157572A (en) | Crystalline silicon solar battery | |
Spath et al. | A novel module assembly line using back contact solar cells | |
CN113745356A (en) | Multi-main-grid back-contact heterojunction solar cell and manufacturing method thereof | |
CN105609581A (en) | Back contact heterojunction solar cell | |
CN110277463B (en) | Solar cell structure manufacturing method | |
Späth et al. | First experiments on module assembly line using back-contact solar cells | |
CN217035648U (en) | Laminated tile assembly prepared by non-main-gate heterojunction solar cell | |
CN110416345A (en) | Heterojunction solar battery structure of the double-deck amorphous silicon intrinsic layer and preparation method thereof | |
CN202678369U (en) | Solar backplane of back contact solar cell | |
CN210156405U (en) | Heterojunction cell structure with hydrogen annealed TCO conductive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |