CN113471180A - Aerogel wisdom light energy street lamp - Google Patents
Aerogel wisdom light energy street lamp Download PDFInfo
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- CN113471180A CN113471180A CN202110737720.6A CN202110737720A CN113471180A CN 113471180 A CN113471180 A CN 113471180A CN 202110737720 A CN202110737720 A CN 202110737720A CN 113471180 A CN113471180 A CN 113471180A
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- aerogel
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- light energy
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- 239000004964 aerogel Substances 0.000 title claims abstract description 39
- 239000000843 powder Substances 0.000 claims abstract description 46
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 40
- 229910021389 graphene Inorganic materials 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004115 Sodium Silicate Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 12
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 12
- 238000000967 suction filtration Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000003490 calendering Methods 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000005087 graphitization Methods 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000011268 mixed slurry Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000005286 illumination Methods 0.000 description 5
- 239000004965 Silica aerogel Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
- F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
- F21W2131/10—Outdoor lighting
- F21W2131/103—Outdoor lighting of streets or roads
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/72—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps in street lighting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
Abstract
The invention discloses an aerogel intelligent light energy street lamp, belongs to the technical field of street lamps, and solves the problems of slow heat dissipation, poor heat insulation effect and poor mechanical property protection of street lamps in the prior art. According to the invention, the heat of the LED lamp filament is rapidly diffused by using the cooling structure, the radiation heat exchange quantity is increased, the heat is isolated from returning to the LED lamp filament, the effective control of the working temperature of the LED lamp is realized, the isolation structure is arranged, the glass powder is dispersed by using the aerogel film, the flexibility of the glass film is realized, the mechanical strength of the aerogel which is simply used as an external heat insulation film is improved, and the lamp filament device is protected.
Description
Technical Field
The invention belongs to the technical field of street lamps, and particularly relates to an aerogel intelligent light energy street lamp.
Background
Nowadays, the power system is also rapidly developed to create the colorful world, 20% of the global power consumption is used for illumination, at present, the light emitting diode in the electrical illumination is paid much attention due to high power generation efficiency, however, although the light emitting efficiency of the novel illumination light source is effectively improved compared with the traditional light source, only 25% of the electric energy is converted into light energy, and other parts are dissipated in a heat manner, so that if the high heat is not dissipated in time, the light emitting efficiency of the illumination light is seriously influenced, and the service life of the illumination light is shortened. At present, for improving the heat dissipation of the LED lamp, an external radiator is usually required to be additionally arranged, but the radiator brings certain trouble to the whole encapsulation, and is limited by the miniaturization of equipment, the heat dissipation and conduction capacity is still insufficient.
Disclosure of Invention
The invention aims to provide an aerogel intelligent light energy street lamp which is fast in heat dissipation, good in heat insulation effect and strong in mechanical property protection aiming at the defects in the prior art.
In order to achieve the technical purpose, the aerogel intelligent light energy street lamp adopts the technical scheme that:
an aerogel smart light energy street lamp comprises an LED filament substrate, a cooling structure arranged on the surface of the LED filament substrate and a separation structure filled on the surface of the cooling structure;
the LED filament substrate comprises a filament substrate, a plurality of grooves are formed in the surface of the filament substrate, the grooves are distributed in an array mode along the radial direction, LED chips are etched in the grooves, and the adjacent LED chips are electrically connected through a lead;
the temperature reduction structure comprises a heat control film covering the surface of the filament substrate, the heat control film comprises a graphene film and a metal layer deposited on the surface of the graphene film, an array through hole is formed between the graphene film and the metal layer, an aerogel column forming a heat insulation layer is filled in the array through hole, and fluorescent powder particles are etched on the back surface of the metal layer;
the blocking structure comprises an aerogel film coated on the surface of the metal layer and glass powder filled on the surface of the aerogel film.
Preferably, the depth of the groove is 0.3-0.5 mm, the thickness of the heat control film is 0.8-1.2 mm, and the heat control film is bonded on the surface of the filament substrate through heat-conducting silicone grease.
Preferably, the LED chips are equally spaced, and the adjacent LED chip strings are equally spaced and connected in parallel.
Preferably, the metal layer is a silver layer or an aluminum layer.
Preferably, the phosphor comprises at least one of aluminate green powder and nitrogen oxide green powder, and at least one of nitrogen oxide red powder and fluoride red powder.
Preferably, the preparation method of the heat control film wrapped in the barrier structure comprises the following steps:
1) preparing a graphene oxide solution by adopting a liquid phase stripping Hummers method, forming a graphene oxide film by self-assembly on a gas-liquid interface, then obtaining the graphene film by carbonization, graphitization and calendering, and rapidly transferring the heat of an LED chip by utilizing the high thermal conductivity of the graphene film to avoid the local temperature rise;
2) preparing slurry of fluorescent powder and metal powder according to a proportion, depositing the mixed slurry on the surface of a glass substrate, standing for 0.5h to form a liquid film layer, drying at 150 ℃ for 0.5h, and carrying out high-temperature sintering annealing to form a metal thin layer with one side covered with the fluorescent powder;
3) preparing a sodium silicate solution and a deionized water solution according to a volume ratio of 1:4, dropwise adding a plurality of drops of dilute sulfuric acid into the sodium silicate solution, adjusting the pH to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, replacing with an ethanol solvent, performing suction filtration, then soaking in a mixed solution of TMCS and n-hexane with a volume ratio of 1:5 for 24 hours, washing, and drying to obtain SiO2An aerogel;
4) treating the graphene film in the step 1) with oxygen plasma for 3-5 min, etching the surface of the graphene film by adopting a laser etching method to form an array through hole, and filling the SiO prepared in the step 3) into the array through hole2Depositing the metal thin layer prepared in the step 2) on the surface of the graphene film by using a magnetron sputtering method, putting the graphene film into an atmosphere furnace, introducing argon gas of 500ml/min as protective gas, and performing high-temperature treatment to obtain a flexible heat control film;
5) preparing a sodium silicate solution and a deionized water solution according to a volume ratio of 1:4, adding a certain amount of glass powder into the sodium silicate solution, dropwise adding a plurality of drops of dilute sulfuric acid, adjusting the pH to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, performing ethanol solvent replacement, performing suction filtration, then placing the mixture in a mixed solution of TMCS and n-hexane according to a volume ratio of 1:5, soaking for 24 hours, and washing to obtain moisture gel;
6) and (3) uniformly coating the moisture gel on the surface of the cooling structure, and then placing the cooling structure in a drying box for high-temperature drying to obtain the heat control film covered with the barrier structure.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the cooling structure is utilized to rapidly diffuse the heat of the LED lamp filament, increase the radiation heat exchange quantity, and simultaneously isolate the heat from returning to the LED lamp filament, so that the working temperature of the LED lamp is effectively controlled, and the service life of the LED lamp is prolonged;
2. according to the invention, the fluorescent powder is etched on the back of the metal layer, so that the LED filament is endowed with better light-emitting uniformity and stability, and meanwhile, a fluorescent powder adhesive layer is not required to be additionally arranged, so that the volume of the LED filament is reduced, and the heat dissipation obstruction caused by the adhesive layer is reduced;
3. according to the invention, the separation structure is arranged, the glass powder is dispersed by using the aerogel film, the glass film is flexible, external air and heat are effectively isolated from entering the LED filament, the photoelectric stability and the service life of the LED filament are improved, the mechanical strength of the aerogel which is only used as an external heat insulation film is improved, and the filament device is protected.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of a thermal management film of the present invention.
In the figure: 1. a filament base; 2. a groove; 3, LED chip; 4. a graphene film; 5. a metal layer; 6. aerogel columns; 7. aerogel films.
Detailed Description
The invention will be further described with reference to the following drawings and detailed description:
as shown in fig. 1-2, an aerogel intelligent light energy street lamp includes an LED filament substrate, a cooling structure disposed on a surface of the LED filament substrate, and a blocking structure filled on a surface of the cooling structure;
the LED filament substrate comprises a filament substrate 1, a plurality of grooves 2 are formed in the surface of the filament substrate 1, the grooves 2 are distributed in an array mode along the radial direction, LED chips 3 are etched in the grooves 2, and the adjacent LED chips 3 are electrically connected through conducting wires;
the temperature reduction structure comprises a heat control film covering the surface of the filament substrate 1, the heat control film comprises a graphene film 4 and a metal layer 5 deposited on the surface of the graphene film 4, an array through hole is formed between the graphene film 4 and the metal layer 5, an aerogel column 6 forming a heat insulation layer is filled in the array through hole, and fluorescent powder particles are etched on the back surface of the metal layer 5;
the blocking structure comprises an aerogel film 7 coated on the surface of the metal layer 5 and glass powder filled on the surface of the aerogel film 7.
In the invention, a filament substrate 1 is used as a support to bear LED chips 3, and a plurality of LED chips 3 are electrically connected by using a lead to form a circuit system; the filament substrate 1 is made of a conventional filament substrate material, such as a metal/graphene composite substrate or a ceramic/graphene composite substrate, graphene is compatible with metal particles or ceramic particles, and the high thermal conductivity of graphene is utilized, so that the thermal conductivity of the substrate is changed, heat generated by the LED filament can be rapidly and completely radiated to a heat control film, and the problem of poor heat dissipation effect of the filament substrate is effectively solved.
The heat control film in the cooling structure of the invention utilizes the graphene film 4 to quickly disperse the heat of the central heat source of the LED, accelerates the heat conduction of the surface of the filament substrate 1, eliminates local high temperature, improves the average degree on a radiating plane, leads the surface temperature to tend to be uniform, increases the heat exchange temperature difference, increases the total radiation heat exchange quantity of the surface by the high emission characteristic of the metal layer 5, arranges the aerogel columns 6 in the array through holes, adopts sol-gel and supercritical to prepare the silica aerogel columns, because the silica aerogel has high porosity and a nanometer solid skeleton structure, compared with gas phase heat conduction and radiation heat exchange, the solid phase heat conduction has small contribution to the overall heat conduction coefficient of the material, simultaneously increases the material density, increases the solid phase heat conduction coefficient, and reduces the gas phase heat conduction coefficient and the radiation heat exchange, thereby leading the silica aerogel to have good heat-insulating property, due to the heat insulation property of the silicon dioxide aerogel, the heat radiated from the graphene to the metal layer 5 is prevented from returning to the LED chip 3, and the LED chip 3 keeps good electrical performance and heat radiation performance; etching phosphor powder at the 5 backs of metal level, 3 light effects of LED chip in the encapsulation are higher, phosphor powder evenly distributed is at the 5 backs of metal level, the homogeneity and the stability of 3 light-emitting of LED chip have been guaranteed, whole luminousness and homogeneity have been decided to the directness of phosphor powder content simultaneously, if phosphor powder content is too high, then lead to the light transmissivity and the distribution homogeneity of metal level 5 to descend, if phosphor powder content crosses lowly, then phosphor powder stimulated emission intensity is not enough, make 3 whole light effects of LED chip not enough, consequently phosphor powder content control is at 13% -15%, make accuse thermal diaphragm luminousness reach more than 95%.
According to the invention, the blocking structure is set as the aerogel film 7 with the glass powder distributed on the surface, the aerogel film 7 is tightly wrapped on the surface of the heat control film through the ductility of the aerogel film 7, the aerogel film 7 is used for isolating external heat and air from entering the LED lamp filament, and meanwhile, the mechanical property of the aerogel film 7 is improved by adding the glass powder, so that the lamp filament device is protected.
The depth of the groove 2 is 0.3-0.5 mm, the thickness of the heat control film is 0.8-1.2 mm, and the heat control film is bonded on the surface of the filament substrate through heat conduction silicone grease. The grooves 2 are formed in the surface of the filament substrate 1 in an etching mode, the depth of each groove 2 is 0.3-0.5 mm so as to be matched with the thickness of the LED chip 3, the grooves 2 are formed in the etching mode, and the problem of high difficulty in the conventional welding process is solved.
The LED chips 3 are equal in distance, and the adjacent LED chip 3 strings are equal in distance and connected in parallel. The LED chip strings of different groups are connected in parallel, so that the problem that the LED chip 3 is damaged in a large area due to single damage after the LED chip strings are connected in series is solved.
The metal layer 5 is a silver layer or an aluminum layer. The metal layer 5 is set to be a silver layer or an aluminum layer, and the total amount of radiation heat exchange on the surface is increased by utilizing the characteristic of high emissivity of the metal layer, so that the heat emitted by the LED chip 3 is quickly reduced.
The fluorescent powder comprises at least one of aluminate green powder and nitrogen oxide green powder and at least one of nitrogen oxide red powder and fluoride red powder. Through the combination of the fluorescent powder with different colors, the luminous efficiency of the filament is improved.
The preparation method of the heat control film coated in the barrier structure comprises the following steps:
1) preparing a graphene oxide solution by adopting a liquid phase stripping Hummers method, forming a graphene oxide film by self-assembly on a gas-liquid interface, then obtaining the graphene film by carbonization, graphitization and calendering, and rapidly transferring the heat of an LED chip by utilizing the high thermal conductivity of the graphene film to avoid the local temperature rise;
2) preparing slurry of fluorescent powder and metal powder according to a proportion, depositing the mixed slurry on the surface of a glass substrate, standing for 0.5h to form a liquid film layer, drying at 150 ℃ for 0.5h, and carrying out high-temperature sintering annealing to form a metal thin layer with one side covered with the fluorescent powder;
3) preparing sodium silicate and removing according to the volume ratio of 1:4Dropwise adding a plurality of drops of dilute sulfuric acid into a sodium silicate solution, adjusting the pH value to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, performing replacement by an ethanol solvent, performing suction filtration, then soaking in a mixed solution of TMCS and n-hexane at a volume ratio of 1:5 for 24 hours, washing, and drying to obtain SiO2An aerogel;
4) treating the graphene film in the step 1) with oxygen plasma for 3-5 min, etching the surface of the graphene film by adopting a laser etching method to form an array through hole, and filling the SiO prepared in the step 3) into the array through hole2Depositing the metal thin layer prepared in the step 2) on the surface of the graphene film by using a magnetron sputtering method, putting the graphene film into an atmosphere furnace, introducing argon gas of 500ml/min as protective gas, and performing high-temperature treatment to obtain a flexible heat control film;
5) preparing a sodium silicate solution and a deionized water solution according to a volume ratio of 1:4, adding a certain amount of glass powder into the sodium silicate solution, dropwise adding a plurality of drops of dilute sulfuric acid, adjusting the pH to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, performing ethanol solvent replacement, performing suction filtration, then placing the mixture in a mixed solution of TMCS and n-hexane according to a volume ratio of 1:5, soaking for 24 hours, and washing to obtain moisture gel;
6) and (3) uniformly coating the moisture gel on the surface of the cooling structure, and then placing the cooling structure in a drying box for high-temperature drying to obtain the heat control film covered with the barrier structure.
According to the invention, the heat control film is adhered to the surface of the filament substrate through the thermal interface, so that the heat emitted from the surface of the filament is quickly cooled through the heat control film, and meanwhile, the blocking structure prevents external air from entering the filament to oxidize the LED chip, so that the service life of the LED lamp is prolonged; adhesive is not added in the preparation process of the heat control film and the blocking structure, so that the thickness of the LED lamp is ensured, and the problem of brightness divergence of an LED chip due to the influence of the opacity of the adhesive is solved.
Therefore, the invention is not to be limited to the specific embodiments, but rather, all equivalent changes and modifications in the shapes, structures, characteristics and spirit of the invention are intended to be included within the scope of the appended claims.
Claims (6)
1. The utility model provides an aerogel wisdom light energy street lamp which characterized in that: the LED filament cooling structure comprises an LED filament substrate, a cooling structure arranged on the surface of the LED filament substrate and a separation structure filled on the surface of the cooling structure;
the LED filament substrate comprises a filament substrate, a plurality of grooves are formed in the surface of the filament substrate, the grooves are distributed in an array mode along the radial direction, LED chips are etched in the grooves, and the adjacent LED chips are electrically connected through a lead;
the temperature reduction structure comprises a heat control film covering the surface of the filament substrate, the heat control film comprises a graphene film and a metal layer deposited on the surface of the graphene film, an array through hole is formed between the graphene film and the metal layer, an aerogel column forming a heat insulation layer is filled in the array through hole, and fluorescent powder particles are etched on the back surface of the metal layer;
the blocking structure comprises an aerogel film coated on the surface of the metal layer and glass powder filled on the surface of the aerogel film.
2. The aerogel smart light energy street light as claimed in claim 1, wherein: the depth of the groove is 0.3-0.5 mm, the thickness of the heat control film is 0.8-1.2 mm, and the heat control film is bonded on the surface of the filament substrate through heat conduction silicone grease.
3. The aerogel smart light energy street light as claimed in claim 1, wherein: the LED chips are equal in distance, and the adjacent LED chip strings are equal in distance and connected in parallel.
4. The aerogel smart light energy street light as claimed in claim 1, wherein: the metal layer is a silver layer or an aluminum layer.
5. The aerogel smart light energy street light as claimed in claim 1, wherein: the fluorescent powder comprises at least one of aluminate green powder and nitrogen oxide green powder and at least one of nitrogen oxide red powder and fluoride red powder.
6. The aerogel smart light energy street light as claimed in claim 1, wherein: the preparation method of the heat control film coated in the barrier structure comprises the following steps:
1) preparing a graphene oxide solution by adopting a liquid phase stripping Hummers method, forming a graphene oxide film by self-assembly on a gas-liquid interface, then obtaining the graphene film by carbonization, graphitization and calendering, and rapidly transferring the heat of an LED chip by utilizing the high thermal conductivity of the graphene film to avoid the local temperature rise;
2) preparing slurry of fluorescent powder and metal powder according to a proportion, depositing the mixed slurry on the surface of a glass substrate, standing for 0.5h to form a liquid film layer, drying at 150 ℃ for 0.5h, and carrying out high-temperature sintering annealing to form a metal thin layer with one side covered with the fluorescent powder;
3) preparing a sodium silicate solution and a deionized water solution according to a volume ratio of 1:4, dropwise adding a plurality of drops of dilute sulfuric acid into the sodium silicate solution, adjusting the pH to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, replacing with an ethanol solvent, performing suction filtration, then soaking in a mixed solution of TMCS and n-hexane with a volume ratio of 1:5 for 24 hours, washing, and drying to obtain SiO2An aerogel;
4) treating the graphene film in the step 1) with oxygen plasma for 3-5 min, etching the surface of the graphene film by adopting a laser etching method to form an array through hole, and filling the SiO prepared in the step 3) into the array through hole2Depositing the metal thin layer prepared in the step 2) on the surface of the graphene film by using a magnetron sputtering method, putting the graphene film into an atmosphere furnace, introducing argon gas of 500ml/min as protective gas, and performing high-temperature treatment to obtain a flexible heat control film;
5) preparing a sodium silicate solution and a deionized water solution according to a volume ratio of 1:4, adding a certain amount of glass powder into the sodium silicate solution, dropwise adding a plurality of drops of dilute sulfuric acid, adjusting the pH to 8-9, stopping adding the dilute sulfuric acid when gel appears, standing and aging at 60 ℃, performing suction filtration, performing ethanol solvent replacement, performing suction filtration, then placing the mixture in a mixed solution of TMCS and n-hexane according to a volume ratio of 1:5, soaking for 24 hours, and washing to obtain moisture gel;
6) and (3) uniformly coating the moisture gel on the surface of the cooling structure, and then placing the cooling structure in a drying box for high-temperature drying to obtain the heat control film covered with the barrier structure.
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