CN113466266B - 用于获取3d衍射数据的方法和系统 - Google Patents

用于获取3d衍射数据的方法和系统

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Publication number
CN113466266B
CN113466266B CN202110331190.5A CN202110331190A CN113466266B CN 113466266 B CN113466266 B CN 113466266B CN 202110331190 A CN202110331190 A CN 202110331190A CN 113466266 B CN113466266 B CN 113466266B
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China
Prior art keywords
charged particle
sample
particle beam
image
region
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CN202110331190.5A
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English (en)
Chinese (zh)
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CN113466266A (zh
Inventor
B·比伊斯
A·亨斯特
Y·邓
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FEI Co
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FEI Co
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Publication of CN113466266B publication Critical patent/CN113466266B/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes
    • H01J37/2955—Electron or ion diffraction tubes using scanning ray
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2617—Comparison or superposition of transmission images; Moiré
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN202110331190.5A 2020-03-30 2021-03-29 用于获取3d衍射数据的方法和系统 Active CN113466266B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/835218 2020-03-30
US16/835,218 US11456149B2 (en) 2020-03-30 2020-03-30 Methods and systems for acquiring 3D diffraction data

Publications (2)

Publication Number Publication Date
CN113466266A CN113466266A (zh) 2021-10-01
CN113466266B true CN113466266B (zh) 2025-09-05

Family

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CN202110331190.5A Active CN113466266B (zh) 2020-03-30 2021-03-29 用于获取3d衍射数据的方法和系统

Country Status (4)

Country Link
US (1) US11456149B2 (https=)
EP (1) EP3889591B1 (https=)
JP (1) JP7489348B2 (https=)
CN (1) CN113466266B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12259343B2 (en) * 2019-09-20 2025-03-25 The Regents Of The University Of California Systems and methods for structurally characterizing compounds
US11815476B2 (en) * 2021-03-30 2023-11-14 Fei Company Methods and systems for acquiring three-dimensional electron diffraction data
EP4632787A1 (en) * 2024-04-10 2025-10-15 Fei Company Method for obtaining a tilt series of images of a sample at a plurality of tilt angles
EP4632786A1 (en) * 2024-04-10 2025-10-15 Fei Company Method for obtaining a tilt series of images of a sample at a plurality of tilt angles

Citations (2)

* Cited by examiner, † Cited by third party
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JPWO2015029201A1 (ja) * 2013-08-30 2017-03-02 株式会社日立製作所 スピン検出器、及び荷電粒子線装置および光電子分光装置
CN110313047A (zh) * 2017-03-20 2019-10-08 卡尔蔡司显微镜有限责任公司 带电粒子束系统和方法

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US6882477B1 (en) * 1999-11-10 2005-04-19 Massachusetts Institute Of Technology Method and system for interference lithography utilizing phase-locked scanning beams
JP4164261B2 (ja) * 2000-03-30 2008-10-15 独立行政法人科学技術振興機構 干渉計測装置
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
JP4807592B2 (ja) 2005-02-21 2011-11-02 国立大学法人京都工芸繊維大学 電子顕微鏡及び複合照射レンズ
WO2007008792A2 (en) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
GB0713276D0 (en) 2007-07-09 2007-08-15 Medical Res Council Transmission electron microscope
US8350237B2 (en) * 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
US8841613B2 (en) * 2010-05-20 2014-09-23 California Institute Of Technology Method and system for 4D tomography and ultrafast scanning electron microscopy
EP2413345B1 (en) * 2010-07-29 2013-02-20 Carl Zeiss NTS GmbH Charged particle beam system
JP2014082143A (ja) 2012-10-18 2014-05-08 Hitachi High-Technologies Corp 電子顕微鏡
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
NL2014994A (en) * 2014-07-09 2016-04-12 Asml Netherlands Bv Inspection apparatus and methods, methods of manufacturing devices.
JP6677519B2 (ja) * 2016-02-03 2020-04-08 日本電子株式会社 電子顕微鏡および収差測定方法
US9978557B2 (en) * 2016-04-21 2018-05-22 Fei Company System for orienting a sample using a diffraction pattern
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205528B4 (de) * 2017-03-31 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren für ein Rastersondenmikroskop
US20210305007A1 (en) * 2020-03-30 2021-09-30 Fei Company Dual beam bifocal charged particle microscope
US11404241B2 (en) * 2020-03-30 2022-08-02 Fei Company Simultaneous TEM and STEM microscope

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPWO2015029201A1 (ja) * 2013-08-30 2017-03-02 株式会社日立製作所 スピン検出器、及び荷電粒子線装置および光電子分光装置
CN110313047A (zh) * 2017-03-20 2019-10-08 卡尔蔡司显微镜有限责任公司 带电粒子束系统和方法

Also Published As

Publication number Publication date
JP7489348B2 (ja) 2024-05-23
JP2021163753A (ja) 2021-10-11
CN113466266A (zh) 2021-10-01
US11456149B2 (en) 2022-09-27
US20210305010A1 (en) 2021-09-30
EP3889591B1 (en) 2022-11-02
EP3889591A1 (en) 2021-10-06

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