JP7489348B2 - ３ｄ回折データを取得するための方法およびシステム - Google Patents

３ｄ回折データを取得するための方法およびシステム Download PDF

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JP7489348B2
JP7489348B2 JP2021054601A JP2021054601A JP7489348B2 JP 7489348 B2 JP7489348 B2 JP 7489348B2 JP 2021054601 A JP2021054601 A JP 2021054601A JP 2021054601 A JP2021054601 A JP 2021054601A JP 7489348 B2 JP7489348 B2 JP 7489348B2
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charged particle
sample
particle beam
bifocal
roi
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Japanese (ja)
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JP2021163753A (ja
JP2021163753A5 (https=
Inventor
ブイユッセ バルト
ヘンストラ アレクサンダー
デン ユチェン
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FEI Co
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FEI Co
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295—Electron or ion diffraction tubes
    • H01J37/2955—Electron or ion diffraction tubes using scanning ray
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/102—Different kinds of radiation or particles beta or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2617—Comparison or superposition of transmission images; Moiré
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2021054601A 2020-03-30 2021-03-29 ３ｄ回折データを取得するための方法およびシステム Active JP7489348B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/835,218 2020-03-30
US16/835,218 US11456149B2 (en) 2020-03-30 2020-03-30 Methods and systems for acquiring 3D diffraction data

Publications (3)

Publication Number Publication Date
JP2021163753A JP2021163753A (ja) 2021-10-11
JP2021163753A5 JP2021163753A5 (https=) 2024-02-27
JP7489348B2 true JP7489348B2 (ja) 2024-05-23

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JP2021054601A Active JP7489348B2 (ja) 2020-03-30 2021-03-29 ３ｄ回折データを取得するための方法およびシステム

Country Status (4)

Country Link
US (1) US11456149B2 (https=)
EP (1) EP3889591B1 (https=)
JP (1) JP7489348B2 (https=)
CN (1) CN113466266B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12259343B2 (en) * 2019-09-20 2025-03-25 The Regents Of The University Of California Systems and methods for structurally characterizing compounds
US11815476B2 (en) * 2021-03-30 2023-11-14 Fei Company Methods and systems for acquiring three-dimensional electron diffraction data
EP4632787A1 (en) * 2024-04-10 2025-10-15 Fei Company Method for obtaining a tilt series of images of a sample at a plurality of tilt angles
EP4632786A1 (en) * 2024-04-10 2025-10-15 Fei Company Method for obtaining a tilt series of images of a sample at a plurality of tilt angles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006088159A1 (ja) 2005-02-21 2006-08-24 National University Corporation Kyoto Institute Of Technology 電子顕微鏡及び複合照射レンズ
JP2010533352A (ja) 2007-07-09 2010-10-21 メディカル リサーチ カウンシル 透過型電子顕微鏡
JP2014082143A (ja) 2012-10-18 2014-05-08 Hitachi High-Technologies Corp 電子顕微鏡
JP2020511770A (ja) 2017-03-01 2020-04-16 ドンファン ジンギュアン エレクトロン リミテッド 複数の電子ビームを用いたパターン基板画像形成

Family Cites Families (16)

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US6882477B1 (en) * 1999-11-10 2005-04-19 Massachusetts Institute Of Technology Method and system for interference lithography utilizing phase-locked scanning beams
JP4164261B2 (ja) * 2000-03-30 2008-10-15 独立行政法人科学技術振興機構 干渉計測装置
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
WO2007008792A2 (en) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
US8350237B2 (en) * 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
US8841613B2 (en) * 2010-05-20 2014-09-23 California Institute Of Technology Method and system for 4D tomography and ultrafast scanning electron microscopy
EP2413345B1 (en) * 2010-07-29 2013-02-20 Carl Zeiss NTS GmbH Charged particle beam system
WO2015029201A1 (ja) * 2013-08-30 2015-03-05 株式会社日立製作所 スピン検出器、及び荷電粒子線装置および光電子分光装置
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
NL2014994A (en) * 2014-07-09 2016-04-12 Asml Netherlands Bv Inspection apparatus and methods, methods of manufacturing devices.
JP6677519B2 (ja) * 2016-02-03 2020-04-08 日本電子株式会社 電子顕微鏡および収差測定方法
US9978557B2 (en) * 2016-04-21 2018-05-22 Fei Company System for orienting a sample using a diffraction pattern
WO2018172186A1 (en) * 2017-03-20 2018-09-27 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
DE102017205528B4 (de) * 2017-03-31 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren für ein Rastersondenmikroskop
US20210305007A1 (en) * 2020-03-30 2021-09-30 Fei Company Dual beam bifocal charged particle microscope
US11404241B2 (en) * 2020-03-30 2022-08-02 Fei Company Simultaneous TEM and STEM microscope

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006088159A1 (ja) 2005-02-21 2006-08-24 National University Corporation Kyoto Institute Of Technology 電子顕微鏡及び複合照射レンズ
JP2010533352A (ja) 2007-07-09 2010-10-21 メディカル リサーチ カウンシル 透過型電子顕微鏡
JP2014082143A (ja) 2012-10-18 2014-05-08 Hitachi High-Technologies Corp 電子顕微鏡
JP2020511770A (ja) 2017-03-01 2020-04-16 ドンファン ジンギュアン エレクトロン リミテッド 複数の電子ビームを用いたパターン基板画像形成

Also Published As

Publication number Publication date
JP2021163753A (ja) 2021-10-11
CN113466266A (zh) 2021-10-01
US11456149B2 (en) 2022-09-27
CN113466266B (zh) 2025-09-05
US20210305010A1 (en) 2021-09-30
EP3889591B1 (en) 2022-11-02
EP3889591A1 (en) 2021-10-06

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