CN113451494B - LED backboard - Google Patents

LED backboard Download PDF

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Publication number
CN113451494B
CN113451494B CN202010386151.0A CN202010386151A CN113451494B CN 113451494 B CN113451494 B CN 113451494B CN 202010386151 A CN202010386151 A CN 202010386151A CN 113451494 B CN113451494 B CN 113451494B
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Prior art keywords
led
contact electrode
heat
heat dissipation
chip
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CN113451494A (en
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张朋月
徐瑞林
黄嘉桦
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials

Abstract

The present invention provides an LED backplane comprising: a substrate; the LED packaging structure comprises a first layer body arranged above a substrate, wherein a first contact electrode and a second contact electrode are arranged on the first layer body, an installation groove used for installing an LED chip is arranged between the first contact electrode and the second contact electrode, a heat dissipation piece used for absorbing heat is laid in the installation groove from inside to outside, and the extension direction of the heat dissipation piece is perpendicular to a connecting line of the first contact electrode and the second contact electrode; the LED chip is arranged in the mounting groove and attached to the radiating piece, and electrodes of the LED chip are bonded with the first contact electrode and the second contact electrode respectively. According to the LED display device, the plurality of mounting grooves are formed in the first layer body above the substrate, after the LED chips are mounted on the mounting grooves, the LED chips are tightly attached to the heat dissipation parts preset in the mounting grooves, and when the plurality of LED chips start to work, the generated heat is absorbed and transferred by the heat dissipation parts, so that the temperature of the LED chips is controlled not to be too high, and the display of the display is prevented from being influenced due to high temperature.

Description

LED backboard
Technical Field
The invention relates to the technical field of household appliance components, in particular to an LED backboard.
Background
With the rapid development of science and technology, various types of displays are endlessly developed, the display effect and the use performance of new products are greatly improved, but each new technology brings additional problems at the same time, and the use experience of new products is influenced.
The Micro-LED display screen has the advantages of higher brightness, better luminous efficiency and lower power in the use process compared with an OLED display screen, and also has the advantages of high color saturation, high reaction speed, high contrast and the like in the LED display.
Thus, there is still a need for improvement and development of the prior art.
Disclosure of Invention
The invention aims to solve the technical problem that in the prior art, the distances between the LED chips arrayed in the back plate of the Micro-LED display are too small, so that heat accumulation is easy to occur in the using process, and the normal display of the Micro-LED display is influenced.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an LED backplane, wherein the LED backplane comprises: a substrate; the LED packaging structure comprises a first layer body arranged above a substrate, wherein a first contact electrode and a second contact electrode are arranged on the first layer body, an installation groove used for installing an LED chip is arranged between the first contact electrode and the second contact electrode, a heat dissipation piece used for absorbing heat is laid in the installation groove from inside to outside, and the extension direction of the heat dissipation piece is perpendicular to a connecting line of the first contact electrode and the second contact electrode; the LED chip is arranged in the mounting groove and attached to the radiating piece, and electrodes of the LED chip are bonded with the first contact electrode and the second contact electrode respectively.
The LED backboard is characterized in that a second layer body used for laying a connecting circuit is further arranged above the substrate, and the second layer body is arranged between the first layer body and the substrate.
The LED backboard is characterized in that a driving circuit used for driving the LED chip is arranged between the second layer body and the first layer body and positioned on the second layer body, and an active layer used for connecting the driving circuit with a power supply is arranged between the driving circuit and the substrate.
The LED backboard is characterized in that a through hole is formed between the first contact electrode and the driving circuit, and a conductive material is arranged in the through hole and used for communicating the first contact electrode with the driving circuit.
The LED backboard is characterized in that a first chip electrode and a second chip electrode are respectively arranged on two sides of the LED chip, the first chip electrode is communicated with the first contact electrode, and the second chip electrode is communicated with the second contact electrode.
The LED backboard is characterized in that the plurality of radiating pieces on the first layer body are sequentially connected end to end along the extending direction of the radiating pieces to form a radiating strip body.
The LED backboard, wherein, be provided with on the first layer body and be used for radiating heat conduction structure, heat conduction structure with a plurality of heat dissipation strip body coupling, heat conduction structure set up in the edge of the first layer body, just heat conduction structure with heat dissipation strip body sets up perpendicularly.
The LED backboard is characterized in that the heat conducting structures are arranged in a plurality, and the heat conducting structures and the heat radiating strip body are connected into a whole.
The LED backboard is characterized in that the heat conduction structure is a component made of heat dissipation glue, heat dissipation adhesive tape or metal material.
An intelligent terminal comprises the LED backboard.
The invention has the technical effects that: according to the invention, the plurality of mounting grooves are formed in the first layer body above the substrate, after the LED chips are mounted on the mounting grooves, the LED chips are tightly attached to the heat dissipation parts preset in the mounting grooves, and when the plurality of LED chips start to work, the generated heat is absorbed and transferred by the heat dissipation parts, so that the temperature of the LED chips is controlled not to be too high, and the display of the display is prevented from being influenced due to high temperature.
Drawings
FIG. 1 is a view of the mounting structure of the LED back plate of the present invention;
FIG. 2 is a block diagram of the LED chips of the LED backplane of the present invention;
FIG. 3 is a cross-sectional view of an LED backplane of the present invention;
FIG. 4 is a top view of an LED backplane of the present invention;
FIG. 5 is an enlarged view of a node of the LED backplane of the present invention;
fig. 6 is a top view of another embodiment of the LED backplane of the present invention.
In fig. 1-6 of the present invention: 100, a substrate; 200, an LED chip; 210, a first chip electrode; 220, a second chip electrode; 230, a first semiconductor layer; 240, a light emitting layer; 250, a second semiconductor layer; 300, mounting a groove; 310, a heat sink; 320, a heat sink bar; 400, a first layer; 410, a first contact electrode; 420, a second contact electrode; 500, a second layer; 510, an active layer; 520, a gate insulating layer; 530, an interlayer insulating layer; 540, a buffer layer; 600, a drive circuit; 610, a source electrode; 620, a drain; 630, a gate; 700, a thermally conductive structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the motion situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Micro-LEDs are a new display technology, namely LED scaling and matrixing technology, and specifically are LED arrays integrated on a chip with high density and small size, and the display technology makes LED panels with addressable, individually driven lighting for each pixel, because the LED units used for displaying are ultra-tiny, the resolution is higher, compared with the prior OLED display screen in the market, the LED display screen has higher brightness and better luminous efficiency in the using process, but the power is lower, meanwhile, the color saturation in the LED display is inherited to be high, the reaction speed is high, the contrast is strong, but in the actual using process, because the distance between the LED chips on the Micro-LED display back plate is extremely small, the generated heat is easy to accumulate and difficult to radiate, when the temperature reaches a certain degree, the normal display of the Micro-LED display can be influenced.
To solve the problems of the prior art, the present invention provides an LED backplane, as shown in fig. 1, the LED backplane includes: a substrate 100; the first layer body 400 is arranged above the substrate 100, a first contact electrode 410 and a second contact electrode 420 are arranged on the first layer body 400, an installation groove 300 for installing the LED chip 200 is arranged between the first contact electrode 410 and the second contact electrode 420, a heat dissipation member 310 for absorbing heat is laid in the installation groove 300 from inside to outside, and the extending direction of the heat dissipation member 310 is perpendicular to the connecting line of the first contact electrode 410 and the second contact electrode 420; and an LED chip 200 disposed in the mounting groove 300 and attached to the heat dissipation member 310, wherein electrodes of the LED chip 200 are respectively bonded to the first contact electrode 410 and the second contact electrode 420.
In the present embodiment, a plurality of mounting grooves 300 are formed in the first layer 400 above the substrate 100, the mounting grooves 300 are correspondingly disposed at the mounting positions of the matrix of the LED chips 200, a heat dissipation member 310 is pre-laid in each of the independent mounting grooves 300, the heat dissipation member 310 is a member made of a heat conductive material having an insulating property, preferably a material having a high thermal conductivity, and when one end of the heat dissipation member 310 receives a high temperature, the heat dissipation member 310 can rapidly conduct the temperature to other regions of the heat dissipation member 310, so as to increase the heat dissipation area, in an embodiment, the LED chip 200 is mounted in the mounting groove 300, the heat dissipation member 310 is attached to the LED chip 200, and the top view thereof is shown in fig. 4 and 5, wherein the extending direction of the heat dissipation member 310 is perpendicular to the line connecting the first contact electrode 410 and the second contact electrode 420, i.e. the heat is generated when the LED chip 200 starts to work, because the heat dissipation member 310 is tightly attached to the LED chip 200, heat is conducted into the heat dissipation member 310, and the heat dissipation member 310 rapidly conducts heat to other parts (i.e., the position of the heat dissipation member 310 in fig. 4) that are not in contact with the LED chip 200, thereby increasing the area of heat dissipation and achieving the technical effect of facilitating heat dissipation, meanwhile, because the heat dissipation speed of the part of the heat dissipation member 310 located outside the mounting groove 300 is faster than that of the part of the heat dissipation member 310 located inside the mounting groove 300, the heat source of the heat dissipation member 310 located inside the mounting groove 300 is continuously transmitted to the outside, thereby controlling the temperature of the LED chip 200 not to be too high, and avoiding the display caused by high temperature from being affected.
As shown in fig. 1, since the power supply circuit of the LED chip 200 in this embodiment is connected in the LED backplane, in order to realize more stable circuit supply, the invention further provides a second layer 500 for laying a circuit above the substrate 100, and the second layer 500 is located below the first layer 400, that is, the first layer 400 and the substrate 100 sandwich the second layer 500 to form a fixed LED backplane, in the actual production process, the LED backplane is a prefabricated integral component, and when all the LED chips 200 are mounted in the LED backplane, the LED chips 200 are communicated with the power supply circuit provided in the second layer 500, so as to realize on-off control of the LED chips 200.
Specifically, a driving circuit 600 for controlling voltage is further disposed between the first layer 400 and the second layer 500, and an active layer 510 connected to the driving circuit 600 and a power supply is disposed below the driving circuit 600, specifically, in the present invention, the driving circuit may be a Thin Film Transistor (TFT), a gate line or a signal line, etc., and the driving circuit 600 is switched to be applied between the control terminals of the LED chip 200 according to the control target of the signal transmitted from the electronic circuit, so as to turn on or off the LED chip.
In the above embodiment, it is preferable that the driving circuit 600 is a Thin Film Transistor (TFT) which is an insulated gate field effect transistor, and in the present invention, the thin film transistor functions as a switching tube, and the source electrode 610 and the drain electrode 620 are disposed on both sides of the upper end of the thin film transistor, and the current between the source electrode 610 and the drain electrode 620 is controlled by the voltage applied to the gate electrode 630 through the insulating film of the gate electrode 630, thereby achieving the effect of a control circuit.
The active layer is made of three different types of semiconductor materials, the middle layer is usually a narrow band gap P-type semiconductor with the thickness of 0.1-0.3 mu m and is used as a working medium, the two sides of the middle layer are respectively provided with an N-type semiconductor and a P-type semiconductor with wider band gaps and are called limiting layers, the structure between two semiconductor single crystals with different band gap widths is called a heterojunction, a P-N heterojunction is formed between the active layer and the N layer on the right side, and a P-P heterojunction is formed between the active layer and the P layer on the left side, so the structure is also called an N-P-P double heterojunction structure and is called a DH structure for short.
Based on the above embodiment, as shown in fig. 3, a first contact electrode 410 and a second contact electrode 420 for connecting the LED chip 200 are respectively disposed on the first layer 400 and on two sides of the mounting groove 300, meanwhile, a through hole 430 is disposed below the first contact electrode 410, a lower end of the through hole 430 is connected to the driving circuit 600, when the driving circuit 600 is a thin film transistor, the lower end of the through hole 430 is connected to a drain 620 of the thin film transistor, the through hole 430 is filled with an energizing material 440, and when the through hole 430 is filled with the energizing material 440, the first contact electrode 410 is connected to the driving circuit 600 through the energizing material 440 to form a communicating circuit. In this embodiment, there are various types of the fillable energizing material 400, including: (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
In cooperation with the above embodiment, as shown in fig. 2, the first chip electrode 210 and the second chip electrode 220 are respectively disposed on two sides of the LED chip 200, in an actual operation process, an installer vertically mounts the LED chip 200 into the mounting groove 300, when the bottom of the LED chip 200 reaches the bottom of the mounting groove 300, the first chip electrode 210 and the first contact electrode 410 are attached to each other to form a stable connection, and the second chip electrode 220 and the second contact electrode 420 are attached to each other to form a stable connection, in a specific implementation process, after the LED chip 200 is mounted and fixed in the mounting groove 300, an easily heat-conductive fixing agent may be further coated to further fix the LED chip 200 to ensure a stable relationship in the mounting process of the LED chip 200, in a specific manufacturing process, the materials used for the first chip electrode 210 and the second chip electrode 220 may include: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or the like.
Specifically, the chip type mainly targeted in the present invention is a vertical LED chip 200, and the specific structure of the LED chip 200 includes: a first semiconductor layer 230 connected to the first chip electrode 210, a second semiconductor layer 250 connected to the second chip electrode 220, and a light emitting layer 240 sandwiched between the first semiconductor layer 230 and the second semiconductor layer 250, the light emitting layer 240 may be a quantum well layer, a thin semiconductor film in the middle of the quantum well, and two isolation layers outside. In actual use, electrons are combined with holes to emit photons. The action of the electric field causes new electrons and holes to be generated in the adjacent quantum dots, causing them to combine and emit photons.
The main constituent material of the LED chip 200 is monocrystalline silicon, and in the practical application process, the first semiconductor layer 230 is an N/P doped GaN layer; the second semiconductor layer 250 is a P/N doped GaN layer, and when an electrical signal is applied to the first chip electrode 230 and the second chip electrode 250, electrons in the internal N-type semiconductor and holes in the P-type semiconductor collide and recombine violently in the light emitting layer to generate photons, and energy is emitted in the form of photons, so that the light emitting effect of the LED chip 200 after power on is achieved.
In one embodiment of the present invention, when the driving circuit 600 is a thin film transistor, as shown in fig. 3, the thin film transistor specifically includes: the source electrode 610 and the drain electrode 620 separately disposed inside the first layer body 400, the gate electrode 630 disposed inside the second layer body 500, and the active layer 510 disposed under the gate electrode 630, wherein the source electrode 610 and the drain electrode 620 are respectively connected to the active layer 510, and in correspondence with the above-mentioned arrangement, the second layer body 500 includes a buffer layer 540 connected to the substrate 100 and insulating the substrate 100, the buffer layer 540 providing a flat surface above the substrate 100 to effectively reduce or prevent penetration of foreign materials or moisture through the substrate, wherein the buffer layer 540 may be made of inorganic materials, such as: silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al2O3), aluminum nitride (AlN), titanium oxide (TiO2), or titanium nitride (TiN). The buffer layer may also include organic materials such as: polyimide, polyester, or acrylic, and the like. The second layer 500 further includes a gate insulating layer 520 disposed above the buffer layer 540 for isolating the active layer 510 and the gate electrode 630, and the gate insulating layer 520 is made of inorganic materials, such as SiO2, SiNx, SiON, Al2O3, TiO2, tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO 2). An interlayer insulating layer 530 disposed over the gate insulating layer 520 to insulate the gate electrode 630, the drain electrode 620, and the source electrode 610, the interlayer insulating layer 530 being made of a material including inorganic materials such as: SiO2, SiNx, SiON, Al2O3, TiO2, tantalum oxide (Ta2O5), hafnium oxide (HfO2), zinc oxide (ZnO2), or the like.
In practical operation of the tft, when a positive voltage is applied to the gate electrode 630, the gate voltage causes an electric field to be generated in the gate insulating layer 520, lines of electric force are directed from the gate electrode to above the tft, and induced charges are generated at the upper surface of the tft, as the gate voltage increases, an electron accumulation layer, i.e., an inversion layer, is formed on the upper surface of the tft, and when a strong inversion layer is reached as the voltage increases, carriers pass through a channel between the source electrode 610 and the drain electrode 620 when a voltage is applied thereto. When the voltage between the source 610 and the drain 620 is large, the voltage of the gate 630 is broken to cause the effect of the gate insulating layer 520 gradually decreasing from the source 610 end to the drain 620, electrons in the inversion layer gradually decrease from the source 610 to the drain 620, and the resistance in the channel increases as the voltage between the source 610 and the drain 620 increases, at which time the drain current increases relatively slowly. When the voltage of the source 610 and the drain 620 is increased to a certain degree, the thickness of the anti-reflection layer is reduced to 0, and when the voltage is further increased, the thin film transistor enters a saturation region. In practical LED use, the voltage characteristics are utilized to rapidly charge and maintain the voltage of the LED chip, thereby achieving the unification of rapid response and good storage.
In another embodiment of the present invention, as shown in fig. 5, a heat dissipation member 310 for absorbing heat extends from a mounting groove 300 to two sides, a plurality of adjacent heat dissipation members 310 are connected to each other to form a whole heat dissipation member 310, that is, a heat dissipation strip body 320 is formed, the heat dissipation strip body 320 is laid on a plurality of mounting grooves 300 in a single row direction in a substrate 100 and connected to an LED back plate mounted above the mounting groove 300, when the LED back plate operates, generated heat is transferred to the heat dissipation member 310 through contact, since the heat dissipation member 310 is a member made of a material with high thermal conductivity, heat at a contact portion with the LED back plate can be uniformly transferred to each position of the heat dissipation member 310, in this embodiment, since the plurality of heat dissipation members 310 are communicated with each other, it can be ensured that the plurality of heat dissipation members 310 are involved in heat transfer and release, for example, during actual use, part LED backplate is in high bright state all the time, and part LED chip is in low bright state, wherein, high bright state's LED temperature is higher, when adopting the condition of a plurality of radiating piece 310 interconnect, the radiating strip body 320 promptly, the temperature difference of its each position can be averaged fast to the radiating strip body 320, thereby avoid the high temperature to cause the damage to the LED chip, on the other hand, including a plurality of radiating pieces 310 intercommunication in the radiating strip body 320, the area of contact of radiating piece 310 with the air has been increased, thereby realize further accelerating thermal giving off.
Based on the above embodiment, in another possible implementation manner of the present invention, as shown in fig. 6, a heat conducting structure 700 for dissipating heat is further disposed on the first layer 400, and the heat conducting structure 700 is specifically a strip structure and is connected to the plurality of heat dissipating strip bodies 320, so as to further increase a contact area between the heat dissipating strip bodies 320 and air, and greatly improve efficiency of heat dissipation of the LED back plate of the present invention.
Based on the above embodiment, in another preferred embodiment of the present invention, a plurality of heat conducting structures 700 are provided, and a plurality of heat conducting structures 700 connect all the heat dissipating strip bodies 320 into a whole, as shown in fig. 6, in this embodiment, two heat conducting structures 700 are provided, and two heat conducting structures are respectively provided at two opposite ends of the first layer 400 and located at the outer sides of all the heat dissipating members 310, wherein the heat dissipating members 310 are arranged in the longitudinal direction, the upper and lower ends of a single heat dissipating member 310 extend, and adjacent heat dissipating members 310 are connected to each other to form the heat dissipating strip bodies 320 arranged in the longitudinal direction, in this embodiment, a plurality of heat dissipating strip bodies 320 are provided and arranged in the longitudinal direction, two longitudinal ends of the heat dissipating strip bodies 320 extend to be connected to the heat conducting structures 700 to form a whole similar to a net, and when in actual application, the heat dissipating members 310 may select a material with a higher heat conducting coefficient, for example, silicon rubber, styrene butadiene rubber, ceramics and the like, and also comprises heat-conducting and insulating composite materials and the like which are formed by filling high heat-conducting materials such as SiC, graphite fiber and the like with heat-conducting plastic heat-conducting silica gel as a matrix; the heat conducting mechanism 700 is a member made of heat dissipating glue, heat dissipating tape, or metal material, and has excellent heat conducting and dissipating performance.
Specifically, during operation, since the distance between the LED chips 200 on the Micro-LED display back plate is very small, during actual use, the LED chips 200 generate heat during operation, the heat is transferred to the heat dissipation member 310 in contact with the LED chips 200 through contact conduction, and since the heat dissipation member 310 is laid on the mounting groove 300 from inside to outside, the heat dissipation member 310 conducts the heat accumulated inside the mounting groove 300 to the outside of the mounting groove 300, during which the temperature of the heat dissipation member 310 outside the mounting groove 300 is the same as the temperature of the heat dissipation member 310 inside the mounting groove 300, so when the heat dissipation member 310 outside the mounting groove 300 introduces the heat into the air, the temperature of each position on the heat dissipation member 310 is constantly averaged (i.e., the heat inside the mounting groove 300 is constantly conducted to the outside along the heat dissipation member), thereby achieving a continuous heat dissipation effect, in the present embodiment, since the plurality of heat dissipation members 310 are connected to each other, the heat dissipation strip body 320 is formed, and thus the contact area of the heat dissipation member 320 with the air is increased, thereby further improving the heat dissipation efficiency of the heat dissipation member 310. On the other hand, the present invention further provides a heat conducting structure 700 for connecting the plurality of heat dissipating bar bodies 320 to each other, and the heat conducting structure 700 communicates the plurality of heat dissipating bar bodies 320 to average the temperature difference between the heat dissipating bar bodies 320, so that even if the heat generated in different areas is not uniform, the heat can be quickly averaged, the plurality of heat dissipating bar bodies 320 can participate in the heat dissipating process, the temperature generated by the LED chip 200 in a specific area can be further quickly reduced, and the heat dissipating efficiency can be improved.
Based on the above embodiment, the flow of the present invention in specific use is as follows:
in the manufacturing process, the substrate 100 is firstly arranged, the second layer 500 is arranged above the substrate, the first layer 400 is arranged above the second layer 500, wherein the driving circuit 600 is arranged between the first layer 400 and the second layer 500, and the active layer 510 connected with the power supply is connected below the driving circuit 600; the plurality of mounting grooves 300 are formed above the first layer 400, the heat dissipation member 310 is laid in the mounting grooves 300 from inside to outside, meanwhile, a first contact electrode 410 and a second contact electrode 420 are further respectively arranged on two sides of each mounting groove 300, a through hole 430 for filling a conductive material 440 is formed below the first contact electrode 410, and after the structure is laid, the preparation of the LED backboard is achieved.
When the LED backboard is used, the prepared LED backboard is laid flat, the LED chips 200 are respectively inserted into the plurality of mounting grooves 300, wherein the first chip electrode 210 and the second chip electrode 220 arranged on the two sides of the LED chip 200 are respectively connected with the first contact electrode 410 and the second chip electrode 420, so that a complete power supply circuit for the LED chip 200 is formed. In practical use, the driving circuit 600 obtains an electrical signal transmitted from the active layer 510 to control the LED chip 200 to be turned on or off, when the LED chip 200 is turned on, a predetermined light is played, in use, the LED chip 200 generates heat, and when the heat is generated, the heat is absorbed by the heat dissipation member 310 tightly attached to the LED chip 200, and since the heat dissipation member 310 is arranged from inside to outside, the actually generated heat is conducted to the outside of the mounting groove 300 through the heat dissipation member 310, thereby achieving a heat dissipation effect.
Based on the above embodiment, the invention further provides an intelligent terminal, which includes the LED back plate in the above embodiment, and the LED back plate is provided with a heat dissipation member inside the mounting groove for mounting the LED chip, so that heat generated in the use process of the LED chip is conducted to the outside for heat dissipation, thereby preventing the LED display device of the intelligent home from being affected due to overhigh heat in the use process.
In summary, the present invention discloses an LED back panel, which includes: a substrate; the LED chip packaging structure comprises a first layer body arranged above a substrate, wherein a first contact electrode and a second contact electrode are arranged on the first layer body, a mounting groove for mounting an LED chip is arranged between the first contact electrode and the second contact electrode, a heat dissipation piece for absorbing heat is laid in the mounting groove from inside to outside, and the extension direction of the heat dissipation piece is perpendicular to a connecting line of the first contact electrode and the second contact electrode; the LED chip is arranged in the mounting groove and attached to the radiating piece, and electrodes of the LED chip are respectively bonded with the first contact electrode and the second contact electrode. According to the LED display device, the plurality of mounting grooves are formed in the first layer body above the substrate, after the LED chips are mounted on the mounting grooves, the LED chips are tightly attached to the heat dissipation parts preset in the mounting grooves, and when the plurality of LED chips start to work, the generated heat is absorbed and transferred by the heat dissipation parts, so that the temperature of the LED chips is controlled not to be too high, and the display of the display is prevented from being influenced due to high temperature.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations are possible to those skilled in the art in light of the above teachings, and that all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.

Claims (5)

1. An LED backplane, comprising: a substrate; the LED packaging structure comprises a first layer body arranged above a substrate, wherein a first contact electrode and a second contact electrode are arranged on the first layer body, an installation groove used for installing an LED chip is arranged between the first contact electrode and the second contact electrode, a heat dissipation piece used for absorbing heat is laid in the installation groove from inside to outside, and the extension direction of the heat dissipation piece is perpendicular to a connecting line of the first contact electrode and the second contact electrode; the LED chip is arranged in the mounting groove and attached to the heat dissipation piece, and electrodes of the LED chip are respectively bonded with the first contact electrode and the second contact electrode;
a second layer body for laying a connecting circuit is arranged above the substrate, and the second layer body is arranged between the first layer body and the substrate;
a driving circuit is arranged between the first layer body and the second layer body and is used for driving the LED chip;
a through hole is formed in the first layer body and corresponds to the lower part of the first contact electrode, the lower end of the through hole is connected with the driving circuit, and a conductive material is filled in the through hole;
the second layer body comprises a buffer layer for protecting the substrate;
the LED chip includes: the LED chip comprises a first chip electrode, a second chip electrode and a luminous layer, wherein the first chip electrode and the second chip electrode are respectively arranged on two sides, the luminous layer is clamped between the first chip electrode and the second chip electrode, the LED chip is arranged in the mounting groove, the bottom of the LED chip is abutted against the bottom of the mounting groove, the first chip electrode is jointed and communicated with the first contact electrode, and the second chip electrode is jointed and communicated with the second contact electrode;
the plurality of radiating pieces on the first layer body are sequentially connected end to end along the extending direction of the radiating pieces to form a radiating strip body;
the first layer body is provided with a heat conduction structure for heat dissipation, the heat conduction structure is connected with the plurality of heat dissipation strip bodies, the heat conduction structure is arranged at the edge of the first layer body, and the heat conduction structure is perpendicular to the heat dissipation strip bodies.
2. The LED backplane according to claim 1, wherein an active layer is disposed between the driving circuit and the substrate for connecting the driving circuit to a power source.
3. The LED backboard according to claim 1, wherein the heat conducting structures are provided in plurality, and the plurality of heat conducting structures are integrally connected with the heat dissipating strip body.
4. The LED backplane according to claim 3, wherein the heat conducting structure is a member made of a heat dissipating adhesive, a heat dissipating tape, or a metal material.
5. An intelligent terminal, characterized in that the intelligent terminal comprises the LED backboard of any one of claims 1 to 4.
CN202010386151.0A 2020-05-09 2020-05-09 LED backboard Active CN113451494B (en)

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