CN113451439A - 一种异质结电池生产方法 - Google Patents
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Abstract
本发明公开了一种异质结电池生产方法,涉及异质结太阳电池技术领域,包括如下步骤:步骤1、对硅片进行去损伤层、抛光、制绒和清洗;步骤2、硅片双面制作非晶硅层;步骤3、在硅片背面层边缘设置宽度为0.05‑0.5mm的掩膜,沉积透明导电膜层(TCO层)时,硅片背面被掩膜覆盖的区域不沉积TCO膜;步骤4、硅片放入碱液中进行刻边处理;步骤5,在硅片的正反面上制作金属电极,即完成异质结电池的制作。本发明背面掩膜区宽度减小,背面TCO膜面积增加,增大了电池背面收集电子的能力,从而电池的电流得到提升。采用化学刻蚀去除边缘TCO膜,可以达到理想的刻边效果,降低硅片边缘导通比率,不存在如激光刻蚀带来的物理损伤。
Description
技术领域
本发明涉及异质结太阳电池技术领域,更具体的是涉及异质结电池生产方法技术领域。
背景技术
SHJ(Silicon Herterojunction)硅异质结电池,又被称作HIT(Heterojunctionwith intrinsic thin layer)电池,该电池具有高效率、高Voc等特点,该电池一般以N型硅片为基底,一般制程工序为:制绒、非晶硅、TCO、丝网&测试。
在非晶硅工序生产中,生产设备采用板式(硅片平放)的方式,工艺采用PECVD的方式,而硅片在PECVD中沉积的过程中,n+非晶硅层和p+非晶硅层均存在绕镀的可能,绕镀即一面在镀膜时,镀膜面边缘的位置或者缝隙位置,沉积膜层通过了边缘或者缝隙沉积到了另外一面,形成绕镀。
TCO(透明导电薄膜)生产一般采用PVD工艺,同样的TCO生产也采用板式的生产方式,生产过程中,也存在绕镀的可能,通常情况采用背面掩膜(边缘少沉积一圈)的方式避免正反面导通,为保证前后两面不导通,掩膜(即不沉积TCO位置)的宽度往往很大,边缘>0.7mm,(掩膜示意图如附图),现有的TCO掩膜之所以需要边缘大于0.7mm的间距,主要的原因是TCO膜为N型导电薄膜,当非晶硅层绕镀到掩膜区域,或者TCO正反两面连接时,就会出现并联降低,或者反向漏电的问题,最终导致电池片电性能失效(电性能Rsh(并联)<50Ω或者IRev2(漏电)>0.2A)
;另外一种采用激光刻边的方式,但是激光刻边为物理的去除,对电池片存在损伤,在实际生产过程中,因为损伤的存在,导致FF明显下降,最终造成效率偏低;或者采用在TCO后丝网印专门掩膜(掩膜为石蜡或者聚氨酯)的方式包裹,然后仅用酸或者碱刻蚀边缘部分(工艺操作难度大),最后清洗掉专门掩膜,整个工艺流程复杂,批量化生产工艺操作难度大。
综上所述,现有异质结电池在生产过程中,TCO背面的掩膜(即不沉积TCO位置)宽度大,对电池的电流存在明显影响,从而影响效率;激光刻边的方式可以去除边缘的TCO膜,但是激光刻边又带来了物理损伤,激光的高温给刻边周围非晶硅带来的损伤,对电池的填充因子FF存在明显影响,从而影响效率;TCO后增加专门的掩膜刻边的方法,使整个工艺流程变得非常复杂,工艺难度增加,不利于产业化,大批量生产。
发明内容
本发明的目的在于:为了解决上述技术问题,本发明提供一种异质结电池生产方法。
本发明为了实现上述目的具体采用以下技术方案:
一种异质结电池生产方法,包括如下步骤:
步骤1、硅片制绒:对硅片进行去损伤层、抛光、制绒和清洗;
步骤2、非晶硅制作:对经过步骤1处理的硅片正面制作正面本征非晶硅层和n+非晶硅掺杂层,在硅片背面制作背面本征非晶硅层和P+非晶硅掺杂层,n+非晶硅掺杂层和P+非晶硅掺杂层的制作均通过PECVD的方式沉积;
步骤3、制作TCO层:在步骤2中得到的n+非晶硅掺杂层和P+非晶硅掺杂层上分别制作透明导电膜层(TCO层),P+非晶硅掺杂层边缘设置背面掩膜,掩膜区的宽度为0.05-0.5mm,这样P+非晶硅掺杂层边缘存在一圈未沉积透明导电膜层(TCO层)的区域;
步骤4、刻边工艺:对经过步骤3处理的硅片放入碱液中进行刻边处理;
步骤5、经过步骤4处理的硅片的正反面上制作金属电极,即完成异质结电池的制作。
进一步地,步骤4中,刻边工艺包括如下步骤:
步骤a、对经过步骤3处理的硅片水洗或者采用1号液清洗;
步骤b、经过步骤a清洗的硅片放到碱中刻边;
步骤c、刻边完成后用纯水清洗干净硅片表面碱液;
步骤d、烘干。
进一步地,步骤a中,刻边清洗设备包含槽式或者链式刻蚀设备。
进一步地,步骤b中,碱液为KOH、NaOH、NH4OH中的一种或几种,碱液的浓度1%~50%,温度控制在20~100℃。
进一步地,步骤b中,刻边为浸泡式刻边或仅四边进入碱液中刻边。
本发明的有益效果如下:
1、本发明将透明导电膜层(TCO层)的背面掩膜间距由现有的0.7mm调整至0.05-0.5mm,由于背面掩膜间距减少透明导电膜层(TCO层)正反两面连接的可能性增加,但是透明导电膜层(TCO层)在背面的面积明显增加,由于非晶硅横向导电能力差,透明导电膜层(TCO层)的面积增加,增大了电池背面收集电子的能力,从而电池的电流得到提升。
2、制作TCO层(透明导电层)后的硅片放入碱液中浸泡,将背面掩膜附近的非晶硅层、硅做少量去除,背面掩膜附近的TCO层(透明导电层)由于附着在非晶硅膜上方,因此会被部分去除;而其他部分的TCO层(透明导电层)由于不与碱反应,充当了这次边缘去除背面掩膜的作用,仅对硅片背面边缘0.05-0.5mm的未有TCO层(透明导电层)的位置进行了定向的刻蚀;由于为化学刻蚀,不存在如激光刻蚀带来的物理损伤,且不需要印刷复杂的掩膜,就可以达到刻边的理想效果。
3、TCO层(透明导电层)覆盖面积的增加,提升电流80mA,效率提升0.1-0.2%。在异质结电池规模化生产中,效率的提升即为成本的降低。按照0.1%的效率提升测算,每瓦1.2元,异质结电池的效率按照24%测算,那么每GW产能每年可增加收益=1.2元*1000000000*0.1%/24%=500万元。
附图说明
图1是本发明异质结电池的结构示意图;
图2是背面掩膜的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。
如图1所示,本实施例提供一种异质结电池生产方法,包括如下步骤:
步骤1、硅片制绒:对硅片进行去损伤层、抛光、制绒和清洗;
步骤2、非晶硅制作:对经过步骤1处理的硅片正面制作正面本征非晶硅层和n+非晶硅掺杂层,在硅片背面制作背面本征非晶硅层和P+非晶硅掺杂层,n+非晶硅掺杂层和P+非晶硅掺杂层的制作均通过PECVD的方式沉积;
步骤3、制作TCO层:在步骤2中得到的n+非晶硅掺杂层和P+非晶硅掺杂层上分别制作透明导电膜层(TCO层),P+非晶硅掺杂层边缘设置背面掩膜,掩膜区的宽度为0.05-0.5mm,这样P+非晶硅掺杂层边缘存在一圈未沉积透明导电膜层(TCO层)的区域;
步骤4、刻边工艺:对经过步骤3处理的硅片放入碱液中进行刻边处理;
步骤5、经过步骤4处理的硅片的正反面上制作金属电极,即完成异质结电池的制作。
进一步地,步骤4中,刻边工艺包括如下步骤:
步骤a、对经过步骤3处理的硅片水洗或者采用1号液清洗;
步骤b、经过步骤a清洗的硅片放到碱中刻边;
步骤c、刻边完成后用纯水清洗干净硅片表面碱液;
步骤d、烘干。
进一步地,步骤a中,刻边清洗设备包含槽式或者链式刻蚀设备。
进一步地,步骤b中,碱液为KOH、NaOH、NH4OH中的一种或几种,碱液的浓度1%~50%,温度控制在20~100℃。
进一步地,步骤b中,刻边为浸泡式刻边或仅四边进入碱液中刻边。
实施例1
一种异质结电池生产方法,包括如下步骤:
步骤1、硅片制绒:采用常规的M2尺寸N硅片(面积24432mm2)和常规SHJ(异质结)制绒工艺;
步骤2、非晶硅制作:非晶硅常规板式工艺,PECVD的方式沉积非晶硅膜;
步骤3、制作TCO层:TCO工序,采用PVD,背面设计0.1mm边缘宽度的背面掩膜沉积,为碱浸泡式边缘绝缘做好准备;
步骤4、刻边工艺:
a)、采用自动化设备将制作了TCO层的硅片插入花篮;
b)、水洗,水洗时间为180s;
c)、将硅片整体浸入碱液中进行碱刻边,碱液采用KOH溶液,KOH溶液和水的体积比=1:20;刻边温度控制在65℃,时间控制在180s;
d)、KOH溶液刻边后,用DI水(去离子水)对刻边后的硅片进行溢流,溢流时间为180s;
e)、水溢流烘干:烘干温度为90℃,烘干时间为300s;
步骤6、经过步骤4处理的硅片的正反面上制作金属电极,即完成异质结电池的制作。
表1为本发明的异质结电池生产方法生产的电池(实施例1)和常规的异质结电池生产方法生产的电池(对照组)的性能表。可以看到,掩膜变窄了之后的电流I sc得到了明显提升64mA,刻边处理后,其他电性能正常,效率提升0.12%。
表1本发明的方法和常规方法制作电池的性能对比表
Claims (5)
1.一种异质结电池生产方法,其特征在于,包括如下步骤:
步骤1、硅片制绒:对硅片进行去损伤层、抛光、制绒和清洗;
步骤2、非晶硅制作:对经过步骤1处理的硅片正面制作正面本征非晶硅层和n+非晶硅掺杂层,在硅片背面制作背面本征非晶硅层和P+非晶硅掺杂层,n+非晶硅掺杂层和P+非晶硅掺杂层的制作均通过PECVD的方式沉积;
步骤3、制作TCO层:在步骤2中得到的n+非晶硅掺杂层和P+非晶硅掺杂层上分别制作透明导电膜层(TCO层),P+非晶硅掺杂层边缘设置背面掩膜,掩膜区的宽度为0.05-0.5mm,这样P+非晶硅掺杂层边缘存在一圈未沉积透明导电膜层(TCO层)的区域;
步骤4、刻边工艺:对经过步骤3处理的硅片放入碱液中进行刻边处理;
步骤5、经过步骤4处理的硅片的正反面上制作金属电极,即完成异质结电池的制作。
2.根据权利1所述的一种异质结电池生产方法,其特征在于,步骤4中,刻边工艺包括如下步骤:
步骤a、对经过步骤3处理的硅片水洗或者采用1号液清洗;
步骤b、经过步骤a清洗的硅片放到碱中刻边;
步骤c、刻边完成后用纯水清洗干净硅片表面碱液;
步骤d、烘干。
3.根据权利2所述的一种异质结电池生产方法,其特征在于,步骤a中,刻边清洗设备包含槽式或者链式刻蚀设备。
4.根据权利2所述的一种异质结电池生产方法,其特征在于,步骤b中,碱液为KOH、NaOH、NH4OH中的一种或几种,碱液的浓度1%~50%,温度控制在20~100℃。
5.根据权利2所述的一种异质结电池生产方法,其特征在于,步骤b中,刻边为浸泡式刻边或仅四边进入碱液中刻边。
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