CN113451278A - 隔离器 - Google Patents

隔离器 Download PDF

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Publication number
CN113451278A
CN113451278A CN202010892453.5A CN202010892453A CN113451278A CN 113451278 A CN113451278 A CN 113451278A CN 202010892453 A CN202010892453 A CN 202010892453A CN 113451278 A CN113451278 A CN 113451278A
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Prior art keywords
electrode
insulating layer
insulating
conductor
metal
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Granted
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CN202010892453.5A
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CN113451278B (zh
Inventor
大塚贤一
大塚真理
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of CN113451278A publication Critical patent/CN113451278A/zh
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Publication of CN113451278B publication Critical patent/CN113451278B/zh
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Abstract

实施方式的隔离器具备第一电极、第二电极、导电体和第一绝缘层。所述第二电极设置于所述第一电极之上，与所述第一电极分离。所述导电体沿着与从所述第一电极朝向所述第二电极的第一方向垂直的第一面，设置于所述第一电极及所述第二电极的周围。所述第一绝缘层设置于所述第二电极之上，包含硅、碳及氮。

Description

隔离器
相关申请
本申请享受以日本专利申请2020-52570号(申请日：2020年3月24日)作为基础申请的优先权。本申请通过参考该基础申请而包括基础申请的全部内容。
技术领域
本发明的实施方式一般涉及隔离器。
背景技术
隔离器在切断电流的状态下，利用磁场或电场的变化来传递信号。对于隔离器，要求提高可靠性。
发明内容
实施方式提供一种能够提高可靠性的隔离器。
实施方式的隔离器具备第一电极、第二电极、导电体和第一绝缘层。所述第二电极设置于所述第一电极之上，与所述第一电极分离。所述导电体沿着与从所述第一电极朝向所述第二电极的第一方向垂直的第一面，设置于所述第一电极及所述第二电极的周围。所述第一绝缘层设置于所述第二电极之上，包含硅、碳及氮。
附图说明
图1是表示第一实施方式的隔离器的俯视图。
图2是图1的II-II剖视图。
图3是表示第一实施方式的隔离器的特性的示意图。
图4A、图4B是表示参考例的隔离器的一部分的剖视图及表示参考例的隔离器的分析结果的曲线图。
图5A、图5B是表示第一实施方式的隔离器的一部分的剖视图及表示实施方式的隔离器的分析结果的曲线图。
图6是表示第一实施方式的变形例的隔离器的剖视图。
图7是表示第一实施方式的变形例的隔离器的剖视图。
图8是表示第一实施方式的变形例的隔离器的剖视图。
图9是表示第一实施方式的变形例的隔离器的剖视图。
图10是表示第二实施方式的隔离器的俯视图。
图11是表示第二实施方式的隔离器的截面结构的示意图。
图12是表示第二实施方式的第一变形例的隔离器的俯视图。
图13是图12的XIII-XIII剖视图。
图14是图12的XIV-XIV剖视图。
图15是表示第二实施方式的第一变形例的隔离器的截面结构的示意图。
图16是表示第二实施方式的第二变形例的隔离器的俯视图。
图17是表示第二实施方式的第二变形例的隔离器的截面结构的示意图。
图18是表示第二实施方式的第三变形例的隔离器的示意图。
图19是表示第三实施方式的封装件的立体图。
图20是表示第三实施方式的封装件的截面结构的示意图。
具体实施方式
以下，参照附图对本发明的各实施方式进行说明。
附图是示意性或概念性的，各部分的厚度与宽度的关系、部分间的大小的比率等未必与现实的相同。即使在表示相同的部分的情况下，也存在根据附图而彼此的尺寸、比率不同地进行表示的情况。
在本申请说明书和各图中，对与已经说明过的要素相同的要素标注相同的附图标记并适当省略详细的说明。
(第一实施方式)
图1是表示第一实施方式的隔离器的俯视图。图2是图1的II-II剖视图。
第一实施方式的隔离器涉及被称为数字隔离器、伽伐尼隔离器或伽伐尼绝缘元件等的器件。
如图1及图2所示，第一实施方式的隔离器100包括第一电路1、第二电路2、基板5、第一电极11、第二电极12、第一绝缘层21、第二绝缘层22、第三绝缘层23、第四绝缘层24、绝缘层25及26、第一绝缘部31、绝缘部30、33、35、37及39及导电体50。在图1中，省略了第一绝缘层21、第二绝缘层22、绝缘部35、37及39。
在实施方式的说明中，使用XYZ正交坐标系。将从第一电极11朝向第二电极12的方向设为Z方向(第一方向)。将与Z方向垂直且相互正交的2个方向设为X方向(第二方向)及Y方向(第三方向)。另外，为了说明，将从第一电极11朝向第二电极12的方向称为“上”，将其相反方向称为“下”。这些方向基于第一电极11与第二电极12的相对位置关系，与重力的方向无关。
如图2所示，绝缘部30设置于基板5之上。第一电极11设置于绝缘部30中。第一绝缘部31设置于第一电极11之上。第二电极12设置于第一绝缘部31之上，与第一电极11分离。第二电极12与第一电极11电分离。
在图1及图2所示的例子中，第一电极11及第二电极12是沿着X-Y面(第一面)设置成螺旋状的线圈。第一电极11及第二电极12在Z方向上彼此对置。第二电极12的至少一部分在Z方向上与第一电极11的至少一部分并排。
导电体50沿着X-Y面设置于第一电极11及第二电极12的周围。具体而言，导电体50包括第一导电部51、第二导电部52及第三导电部53。第一导电部51沿着X-Y面设置于第一电极11的周围。第二导电部52设置于第一导电部51的一部分之上。第二导电部52沿着第一导电部51设置有多个。第三导电部53设置于多个第二导电部52之上。第三导电部53沿着X-Y面位于第二电极12的周围。
例如，第二电极12与导电体50之间的X方向上的距离D1比第一电极11与第二电极12之间的Z方向上的距离D2长。
第一绝缘层21设置于第二电极12之上。例如，第一绝缘层21与第二电极12接触。第二绝缘层22设置于第三导电部53之上。例如，第二绝缘层22与第三导电部53接触。第二绝缘层22与第一绝缘层21连续地设置。即，设置于第二电极12及导电体50之上的1个绝缘层可以作为第一绝缘层21及第二绝缘层22发挥功能。或者，第二绝缘层22也可以与第一绝缘层21分离，并沿着X-Y面设置于第二绝缘层22的周围。
第三绝缘层23设置于第一电极11与第一绝缘部31之间。例如，第三绝缘层23与第一电极11接触。第四绝缘层24沿着X-Y面设置于第二导电部52的底部的周围。例如，第四绝缘层24与第一导电部51的另一部分及第二导电部52接触。第四绝缘层24与第三绝缘层23连续地设置。或者，第四绝缘层24也可以与第三绝缘层23分离，并沿着X-Y面而设置于第三绝缘层23的周围。
绝缘层25沿着X-Y面设置于第二电极12底部的周围。绝缘层26设置于第三导电部53的底部的周围。绝缘层26与绝缘层25连续地设置。或者，绝缘层26也可以与绝缘层25分离，并沿着X-Y面设置于绝缘层25的周围。绝缘部33设置于绝缘层25及26之上。绝缘部33沿着X-Y面位于第二电极12的周围及第三导电部53的周围。
在图1所示的例子中，第一电极11的一端(线圈的一端)经由布线60与第一电路1电连接。第一电极11的另一端(线圈的另一端)经由布线61与第一电路1电连接。
第二电极12的一端(线圈的一端)与焊盘62电连接。布线63的一端与焊盘62接合。第二电极12的一端经由焊盘62及布线63与第二电路2电连接。
第二电极12的另一端(线圈的另一端)与焊盘64电连接。布线65的一端与焊盘64接合。第二电极12的另一端经由焊盘64及布线65与第二电路2电连接。
例如，焊盘62设置于第二电极12的一端之上。焊盘64设置于第二电极12的另一端之上。或者，焊盘62的Z方向上的位置及焊盘64的Z方向上的位置也可以与第二电极12的Z方向上的位置相同。焊盘62及64也可以与第二电极12一体地形成。
如图2所示，在导电体50之上设置有焊盘66。导电体50经由焊盘66及布线67与未图示的导电部件电连接。例如，导电体50及基板5与基准电位连接。基准电位例如是接地电位。由此，能够防止导电体50成为浮动电位。通过导电体50的电位的变动，能够降低在导电体50与各电极之间产生非预期的绝缘破坏的可能性。另外，第一电路1也可以设置于基板5之上。在该情况下，通过将导电体50设置于第一电路1之上，相对于从基板5及导电体50的外部朝向第一电路1的电磁波，第一电路1被导电体50遮蔽。其结果，能够使第一电路1的动作更加稳定化。
在焊盘62及66的周围，沿着X-Y面设置有绝缘部35。绝缘部37设置于绝缘部35之上。绝缘部39设置于绝缘部37之上。焊盘62、64及66未被绝缘部35、37及39覆盖，而露出于外部。
第一电路1及第二电路2中的一个用作接收电路。第一电路1及第二电路2中的另一个用作发送电路。在此，对第一电路1是接收电路、第二电路2是发送电路的情况进行说明。
第二电路2向第一电极11发送适于传递的波形的信号(电流)。当电流流过第一电极11时，产生通过螺旋状的第一电极11的内侧的磁场。第一电极11的至少一部分在Z方向上与第二电极12的至少一部分并排。产生的磁力线的一部分通过第二电极12的内侧。由于第二电极12的内侧的磁场的变化，在第二电极12产生感应电动势，电流在第二电极12中流动。第一电路1检测流过第二电极12的电流，生成与检测结果相应的信号。由此，在第一电极11与第二电极12之间，在将电流切断(绝缘)的状态下，传递信号。
对隔离器100的各构成要素的材料的一例进行说明。
基板5例如是硅基板。基板5例如添加有杂质，具有导电性。
第一电极11、第二电极12、导电体50、焊盘62、焊盘64及焊盘66包含金属。例如，第一电极11、第二电极12、导电体50、焊盘62、焊盘64及焊盘66包括从由铜及铝组成的组中选择的金属。为了抑制传递信号时的第一电极11及第二电极12中的发热，优选这些构成要素的电阻低。从降低电阻的观点出发，优选第一电极11、第二电极12、导电体50、焊盘62、焊盘64及焊盘66包含铜。
绝缘部30、第一绝缘部31、绝缘部33及绝缘部35包含硅及氧。例如，绝缘部30、第一绝缘部31、绝缘部33及绝缘部35包含氧化硅。绝缘部30、第一绝缘部31、绝缘部33及绝缘部35还可以包含氮。绝缘部37包含硅及氮。例如，绝缘部37包含氮化硅。绝缘部39包含聚酰亚胺、聚酰胺等绝缘性树脂。
布线63、65及67包含铝等金属。
第一绝缘层21及第二绝缘层22包含硅、碳及氮。第一绝缘层21及第二绝缘层22可以进一步包含氢。第三绝缘层23、第四绝缘层24、绝缘层25及绝缘层26包含硅及氮。例如，第三绝缘层23、第四绝缘层24、绝缘层25及绝缘层26包含氮化硅。通过设置第一绝缘层21～第四绝缘层24，从而能够抑制第一电极11、第二电极12及导电体50所包含的金属材料向各绝缘部的扩散。另外，通过设置第三绝缘层23，能够降低第一电极11与第二电极12之间的漏电流。
第一电极11可以包括金属层11a及11b。金属层11b设置于金属层11a与绝缘部30之间。第二电极12可以包括金属层12a及12b。金属层12b设置于金属层12a与第一绝缘部31之间、金属层12a与绝缘层25之间及金属层12a与绝缘部33之间。金属层11a及12a包含铜。金属层11b和12b包含钽。金属层11b及12b可以包含钽与氮化钽的层叠膜。通过设置金属层11b及12b，从而能够抑制金属层11a及12a所包含的金属材料向各绝缘部的扩散。
第一导电部51也可以包括金属层51a及51b。金属层51b设置于金属层51a与绝缘部30之间。第二导电部52也可以包括金属层52a及52b。金属层52b设置于金属层52a与第一绝缘部31之间、金属层52a与第四绝缘层24之间及金属层52a与第一导电部51之间。第三导电部53也可以包括金属层53a及53b。金属层53b设置于金属层53a与第一绝缘部31之间、金属层53a与绝缘层26之间、金属层53a与绝缘部33之间及金属层53a与第二导电部52之间。金属层51a～53a包含铜。金属层51b～53b包含钽。金属层51b～53b可以包含钽与氮化钽的层叠膜。通过设置金属层51b～53b，从而能够抑制金属层51a～53a所包含的金属材料向各绝缘部的扩散。
对第一实施方式的效果进行说明。
图3是表示第一实施方式的隔离器的特性的示意图。
在图3中，示出了第二电极12的外周附近的等电位线EP。在隔离器100中，在第一电极11与第二电极12之间传递信号时，对第二电极12施加相对于第一电极11及导电体50为正的电压。如图3所示，产生从第二电极12朝向第一电极11的电位的梯度及从第二电极12朝向导电体50的电位的梯度。
图4A是表示参考例的隔离器的一部分的剖视图。图4B是表示参考例的隔离器的分析结果的曲线图。
图5A是表示第一实施方式的隔离器的一部分的剖视图。图5B是表示第一实施方式的隔离器的分析结果的曲线图。
在参考例的隔离器100r中，如图4A所示，代替第一绝缘层21及第二绝缘层22而分别设置有绝缘层21r及22r。绝缘层21r及22r包含氮和硅。绝缘层21r及22r不添加碳而形成，实质上不含碳。
图4B及图5B分别表示图4A及图5A所记载的点划线L上的元素分析的结果。分析使用二次离子质量分析法(SIMS)。点划线L位于第二电极12与第三导电部53之间的X方向上的中间。在图4B和图5B中，纵轴表示Z方向上的位置P。横轴表示Z方向的各位置处的铜元素的浓度C。浓度C是任意单位。
以往，氮化硅被使用在用于防止元素的意外扩散或进入的阻挡层或钝化层等中。尽管如此，发明人发现，如图4B所示，在第二电极12与第三导电部53之间，绝缘层21r附近的铜元素的浓度较高。具体而言，在绝缘部33与绝缘层21r之间的界面，能够确认到铜元素的浓度的峰值。在绝缘部33中，也检测到铜元素，其浓度随着远离界面而减少。
在隔离器中，在信号的传递时，在第一电极11与第二电极12之间施加例如0.6kVrms以上的高电压。此时，如图3所示，不仅在第一电极11与第二电极12之间，在导电体50与第二电极12之间也产生电位大的梯度。在隔离器100r中，认为第二电极12所包含的金属因该梯度而沿着第二电极12与绝缘层21r之间的界面朝向导电体50移动。进而，认为朝向导电体50移动的金属向第二电极12与导电体50之间的绝缘部33扩散。如果金属从第二电极12向导电体50扩散，则沿着扩散的金属局部地流过大的漏电流，在第二电极12与导电体50之间可能产生绝缘破坏。因此，为了降低产生绝缘破坏的可能性，优选能够抑制金属从第二电极12的扩散。
在第一实施方式的隔离器100中，第一绝缘层21包含硅、碳及氮。发明人发现，在第一绝缘层21包括这些材料时，如图5B所示，与未在第一绝缘层21中添加碳时相比，第二电极12的金属的扩散得到抑制。具体而言，在第二电极12与导电体50之间，无法确认到图4B所示那样的高浓度的金属元素。通过抑制金属从第二电极12的扩散，能够降低在隔离器100中产生绝缘破坏的可能性。另外，能够延长直至绝缘破坏为止的隔离器100的动作时间的合计(绝缘寿命)。由此，能够提高隔离器100的可靠性。
第一绝缘层21包含硅、碳及氮时，金属从第二电极12的扩散得到抑制的理由可以认为如下。
对于未添加碳的绝缘层21r，在界面存在硅的悬空键(dangling bond)。由于硅是比较活性的，所以第二电极12的金属与硅发生反应。与硅反应的金属通过第二电极12与导电体50之间的电位差，朝向导电体50沿着绝缘层21r的界面移动。
另一方面，对于包含硅、碳及氮的第一绝缘层21，在绝缘层21r中存在悬空键的部位存在碳，硅与碳结合。即，在第一绝缘层21中，硅的悬空键的数量比绝缘层21r少。因此，硅与第二电极12的金属的反应被抑制。其结果，即使在第二电极12与导电体50之间产生电位差的情况下，金属也不会朝向导电体50移动。
另外，为了抑制导电体50(第三导电部53)所包含的金属的不希望的扩散，也优选第二绝缘层22设置于导电体50之上。与第一绝缘层21同样地，在第二绝缘层22包含硅、碳及氮时，与绝缘层22r相比，导电体50的金属的扩散得到抑制。
为了有效地抑制金属的扩散，第一绝缘层21及第二绝缘层22中的碳浓度优选为10质量％以上且45质量％以下。
为了降低第二电极12与导电体50之间的漏电流，优选第一绝缘层21及第二绝缘层22的电阻更高。为了提高电阻，优选在第一绝缘层21中，氮浓度C1N(质量％)与硅浓度C1Si(质量％)之比C1N/C1Si为0.2以上且0.8以下。优选在第二绝缘层22中，氮浓度C2N(质量％)相对于硅浓度(质量％)C2Si之比C2N/C2Si为0.2以上且0.8以下。
第一绝缘层21还可以包含氢。在该情况下，第一绝缘层21中的氢浓度优选为0.5质量％以上且5质量％以下。同样地，第二绝缘层22也可以还包含氢。在该情况下，第二绝缘层22中的氢浓度优选为0.5质量％以上且5质量％以下。
(变形例)
图6～图9是表示第一实施方式的变形例的隔离器的剖视图。
在图6所示的隔离器110中，第二绝缘层22沿着X-Y面与第一绝缘层21分离。第一绝缘层21至少设置于第二电极12之上。第二绝缘层22至少设置于第三导电部53之上。在该情况下，也与隔离器100同样地，能够抑制第二电极12所包含的金属的扩散。
在图7所示的隔离器120中，第四绝缘层24包含硅、碳及氮。第四绝缘层24还可以包含氢。当电流在第一电极11及第二电极12中流动时，产生热。若第一电极11、第二电极12及导电体50热膨胀，则对相邻的各绝缘层及各绝缘部施加应力。
氮化硅的杨氏模量比氧化硅的杨氏模量高。即，氮化硅比氧化硅更难变形。在第四绝缘层24包含硅及氮的情况下，在第二导电部52的底面与第四绝缘层24的接触部分CP，有可能对第四绝缘层24施加较大的应力，产生第四绝缘层24的剥离或破损。另外，包含钽的金属层的热膨胀量大于包含铜或铝等的金属层的热膨胀量。因此，特别是在第二导电部52的底部，金属层52b的沿着X-Y面的热膨胀量大。在该情况下，在接触部分CP中产生第四绝缘层24的剥离或破损的可能性进一步提高。
第四绝缘层24包含硅、碳及氮时的第四绝缘层24的杨氏模量比第四绝缘层24包含硅及氮时的第四绝缘层24的杨氏模量低。即，通过添加碳，第四绝缘层24变得容易变形。根据隔离器120，在接触部分CP，热膨胀时的对第四绝缘层24的应力引起的剥离、破损等得到抑制。由此，隔离器120的可靠性提高。
此外，第三绝缘层23可以包含硅、碳及氮。第三绝缘层23也可以进一步含有氢。也可以是，包含硅、碳及氮的1个绝缘层设置于第一电极11之上及第二导电部52的底部的周围，该1个绝缘层用作第三绝缘层23及第四绝缘层24。
发明人进行验证后，即使在第三绝缘层23及第四绝缘层24中未添加碳的情况下，也没有确认到从第一电极11朝向导电体50的金属的扩散。认为这是因为在信号的传递时，在第一电极11与导电体50之间没有电位差，或者电位差小。因此，从抑制金属的扩散的观点出发，不一定需要向第三绝缘层23及第四绝缘层24添加碳。为了抑制第四绝缘层24的剥离或破损，第四绝缘层24优选包含硅、碳及氮。
在图8所示的隔离器130中，第四绝缘层24与第三绝缘层23分离。第四绝缘层24包含硅、碳及氮。第三绝缘层23不添加碳而形成，包含硅及氮。第三绝缘层23实质上不包含碳。第三绝缘层23中的碳浓度低于第四绝缘层24中的碳浓度。
第三绝缘层23和第四绝缘层24可以相互分离，也可以沿着X-Y面相互接触。第三绝缘层23及第四绝缘层24的一方的一部分也可以设置于另一方的一部分之上。在第三绝缘层23包含硅、碳及氮的情况下，第一电极11与第二电极12之间的漏电流可能增大。在第三绝缘层23实质上不包含碳的情况下，与第三绝缘层23包含碳的情况相比，能够降低第一电极11与第二电极12之间的漏电流。
在图9所示的隔离器140中，第一电极11及第二电极12不是涡旋状而是平板状。例如，第一电极11和第二电极12以第一电极11的上表面与第二电极12的下表面平行的方式设置。
隔离器140利用电场的变化来代替磁场的变化而传递信号。具体而言，若第二电路2向第二电极12施加电压，则在第一电极11与第二电极12之间产生电场。在第一电极11中蓄积与电场强度相应的电荷。第一电路1检测此时的电荷的流动，并基于检测结果生成信号。由此，在第一电极11与第二电极12之间，在切断电流的状态下传递信号。
隔离器140的结构除了与第一电极11及第二电极12有关的结构之外，能够应用与隔离器100同样的结构。根据隔离器140，与隔离器100同样地，能够提高可靠性。
以上说明的各变形例能够适当组合。例如，也可以将隔离器120或130中的第三绝缘层23及第四绝缘层24应用于隔离器110或140。
(第二实施方式)
图10是表示第二实施方式的隔离器的俯视图。
图11是表示第二实施方式的隔离器的截面结构的示意图。
在第二实施方式的隔离器200中，如图10所示，第一电极11的一端经由布线61与导电体50电连接。第一电极11的另一端经由布线60与第一电路1电连接。
如图11所示，第一电路1设置于基板5中。第二电路2设置于与基板5分离的基板6中。焊盘62经由布线63与设置于基板6之上的焊盘68电连接。焊盘64经由布线65与设置于基板6之上的焊盘69电连接。第二电路2与焊盘68及69电连接。
在隔离器200中，在比基板5靠上侧的结构中，能够应用已经说明的各实施方式的结构。由此，能够提高隔离器200的可靠性。
图12是表示第二实施方式的第一变形例的隔离器的俯视图。
图13是图12的XIII-XIII剖视图。图14是图12的XIV-XIV剖视图。
图15是表示第二实施方式的第一变形例的隔离器的截面结构的示意图。
如图12所示，第一变形例的隔离器210包括第一结构体10-1及第二结构体10-2。
如图12、图13及图15所示，第一结构体10-1包括电极11-1、电极12-1、绝缘层21a～26a、绝缘部30a、31a、33a、35a、37a及39a、导电体50a、焊盘62a、焊盘64a及焊盘66a。这些构成要素的结构例如与图2所示的第一电极11、第二电极12、第一绝缘层21～第四绝缘层24、绝缘层25及26、绝缘部30、第一绝缘部31、绝缘部33、35、37及39、导电体50、焊盘62、焊盘64及焊盘66的结构分别相同。
如图12、图14及图15所示，第二结构体10-2包括电极11-2、电极12-2、绝缘层21b-26b、绝缘部分30b、31b、33b、35b、37b和39b、导电体50b、焊盘62b、焊盘64b和焊盘66b。这些构成要素的结构例如与图2所示的第一电极11、第二电极12、第一绝缘层21～第四绝缘层24、绝缘层25及26、绝缘部30、第一绝缘部31、绝缘部33、35、37及39、导电体50、焊盘62、焊盘64及焊盘66的结构分别相同。
如图12所示，焊盘62a通过布线63与焊盘62b电连接。焊盘64a通过布线65与焊盘64b电连接。焊盘66a通过布线67a与其他导电部件电连接。焊盘66b通过布线67b与其他导电部件电连接。
如图15所示，第一电路1设置于基板5中。第一结构体10-1设置于基板5之上。第二电路2设置于基板6中。第二结构体10-2设置于基板6之上。电极11-1的一端与导电体50a电连接。电极11-1的另一端与第一电路1电连接。电极11-2的一端与导电体50b电连接。电极11-2的另一端与第二电路2电连接。
在隔离器210中，在比基板5靠上侧的结构及比基板6靠上侧的结构中，能够应用已经说明的各实施方式的结构。由此，能够抑制金属从电极12-1及12-2的扩散。
在图12～图15所示的隔离器210中，一对电极11-1及电极12-1与一对电极11-2及电极12-2串联连接。换言之，第一电路1与第二电路2之间通过串联连接的两对电极而双重地绝缘。根据隔离器210，与由一对电极进行一重绝缘的结构相比，能够提高绝缘可靠性。
图16是表示第二实施方式的第二变形例的隔离器的俯视图。
图17是表示第二实施方式的第二变形例的隔离器的截面结构的示意图。
如图16及图17所示，第二实施方式的第二变形例的隔离器220与隔离器200的不同点在于，第一电极11的两端与第一电路1电连接。导电体50与第一电路1及第一电极11电分离。如果导电体50被设定为基准电位，则第一电路1、第一电极11及导电体50之间的电连接关系能够适当变更。在该情况下，为了降低第一电极11与导电体50之间的电位差，第一电极11与导电体50优选设定为相同的电位。
图18是表示第二实施方式的第三变形例的隔离器的示意图。
第三变形例的隔离器230包括第一结构体10-1、第二结构体10-2、第三结构体10-3、第四结构体10-4。第一结构体10-1包括电极11-1和电极12-1。第二结构体10-2包括电极11-2和电极12-2。第三结构体10-3包括电极11-3和电极12-3。第四结构体10-4包括电极11-4和电极12-4。各个电极是线圈。第一电路1包括差动驱动电路1a、电容C1及电容C2。第二电路2包括差动接收电路2a、电容C3及电容C4。
例如，差动驱动电路1a、电容C1、电容C2、电极11-1、电极11-2、电极12-1及电极12-2形成于未图示的第一基板之上。电极11-1的一端与第一恒定电位连接。电极11-2的另一端与电容C1连接。电极11-2的一端与第二恒定电位连接。电极11-2的另一端与电容C2连接。
差动驱动电路1a的一个输出与电容C1连接。差动驱动电路1a的另一个输出与电容C2连接。电容C1连接在差动驱动电路1a与电极11-1之间。电容C2连接在差动驱动电路1a与电极11-2之间。
电极11-1和电极12-1隔着绝缘部层叠。电极11-2和电极12-2隔着其他绝缘部层叠。电极12-1的绕线方向与电极12-2的绕线方向相反。电极12-1的一端与电极12-2的一端连接。
例如，差动接收电路2a、电容C3、电容C4、电极11-3、电极11-4、电极12-3及电极12-4形成于未图示的第二基板之上。电极11-3的一端与第三恒定电位连接。电极11-3的另一端与电容C3连接。电极11-4的一端与第四恒定电位连接。电极11-4的另一端与电容C4连接。
差动接收电路2a的一个输入与电容C3连接。差动接收电路2a的另一个输入与电容C4连接。电极11-3和电极12-3隔着绝缘部层叠。电极11-4和电极12-4隔着其他绝缘部层叠。电极12-3的一端与电极12-4的一端连接。
对动作进行说明。在隔离器中，传输调制后的信号。在图18中，Vin表示调制后的信号。在信号的调制中，例如使用边缘触发方式或开-关键控(On-Off Keying)方式。无论哪种方法，Vin都是使原来的信号向高频带位移的信号。
差动驱动电路1a根据Vin而在电极11-1及电极11-2中流过彼此相反方向的电流。电极11-1及11-2产生彼此反向的磁场(H1)。当电极11-1的匝数与电极11-2的匝数相同时，产生的磁场的大小彼此相等。
通过磁场H1在电极12-1产生的感应电压与通过磁场H1在电极12-2产生的感应电压相加。电流i1在电极12-1和12-2中流动。电极12-1的另一端通过接合线与电极12-3的另一端连接。电极12-2的另一端通过其他接合线与电极12-4的另一端连接。接合线例如包括金。接合线的直径例如为30μm。
由电极12-1及12-2相加后的感应电压被施加于电极12-3及12-4。在电极12-3及12-4中流过与电流i1相同的电流值的电流i2。电极12-3及12-4产生彼此反向的磁场(H2)。在电极12-3的匝数与电极12-4的匝数相同时，产生的磁场的大小彼此相等。
通过磁场H2在电极11-3产生的感应电压的方向与通过磁场H2在电极11-4产生的感应电压的方向相反。在电极11-3及11-4中流过电流i3。另外，在电极11-3产生的感应电压的大小与在电极11-4产生的感应电压的大小相同。对差动接收电路2a传输施加电极11-3和11-4分别产生的感应电压被施加加法并被调制后的信号。
(第三实施方式)
图19是表示第三实施方式的封装件的立体图。
图20是表示第三实施方式的封装件的截面结构的示意图。
如图19所示，第三实施方式的封装件300包含金属部件81a～81f、金属部件82a～82f、焊盘83a～83f、焊盘84a～84f、密封部90及多个隔离器230。
在图示的例子中，封装300包括4个隔离器230。即，图18所示的第一结构体10-1～第四结构体10-4的组设置有4个。
多个第一结构体10-1及多个第二结构体10-2设置于金属部件81a的一部分之上。例如，多个第一结构体10-1及多个第二结构体10-2设置于1个基板5之上。基板5与金属部件81a电连接。在基板5中设置有多个第一电路1。1个第一电路1对应于1个第一结构体10-1与1个第二结构体10-2的组而设置。
多个第三结构体10-3及多个第四结构体10-4设置于金属部件82a的一部分上。多个第三结构体10-3及多个第四结构体10-4设置于1个基板6之上。基板6与金属部件82a电连接。在基板6中设置有多个第二电路2。1个第二电路2对应于1个第三结构体10-3与1个第四结构体10-4的组而设置。
金属部件81a进一步与焊盘83a电连接。焊盘83a与各第一结构体10-1及各第二结构体10-2的导电体50a电连接。金属部件82a进一步与焊盘84a电连接。焊盘84a与各第三结构体10-3及各第四结构体10-4的导电体50b电连接。
金属部件81b～81e分别与焊盘83b～83e电连接。焊盘83b～83e分别与多个第一电路1电连接。金属部件81f与焊盘83f电连接。焊盘83f与多个第一电路1电连接。
金属部件82b～82e与焊盘84b～84e分别电连接。焊盘84b～84e与多个第二电路2分别电连接。金属部件82f与焊盘84f电连接。焊盘84f与多个第二电路2电连接。
密封部90覆盖金属部件81a～81f及82a～82f各自的一部分、焊盘83a～83f、焊盘84a～84f及多个隔离器230。
金属部件81a～81f分别具有端子T1a～T1f。金属部件82a～82f分别具有端子T2a～T2f。端子T1a～T1f及T2a～T2f未被密封部90覆盖，而是露出于外部。
例如，端子T1a及T2a与基准电位连接。向端子T1b～T1e输入向各个第一电路1的信号。向端子T2b～T2e输出来自各个第二电路2的信号。端子T1f与用于驱动多个第一电路1的电源连接。端子T2f与用于驱动多个第二电路2的电源连接。
根据第三实施方式，能够降低产生隔离器的绝缘破坏的可能性，能够提高封装件300的可靠性。在此，说明了设置有4个隔离器230的例子，但也可以在封装300中设置1个以上的其他隔离器。
以上，例示了本发明的几个实施方式，但这些实施方式是作为例子提示的，并不意图限定发明的范围。这些新的实施方式能够以其他各种方式实施，在不脱离发明的主旨的范围内，能够进行各种省略、置换、变更等。这些实施方式及其变形例包含在发明的范围及主旨内，并且包含在权利要求书所记载的发明及其等同的范围内。另外，前述的各实施方式能够相互组合来实施。

Claims (10)

1.一种隔离器，具备：
第一电极；
第二电极，设置于所述第一电极之上，与所述第一电极分离；
导电体，沿着与从所述第一电极朝向所述第二电极的第一方向垂直的第一面而设置于所述第一电极及所述第二电极的周围；以及
第一绝缘层，设置于所述第二电极之上，包含硅、碳及氮。
2.根据权利要求1所述的隔离器，其中，
所述导电体与所述第一电极电连接。
3.根据权利要求1所述的隔离器，其中，
所述导电体的电位被设定为与所述第一电极的电位相同。
4.根据权利要求1所述的隔离器，其中，
还具备第二绝缘层，该第二绝缘层设置于所述导电体之上，包含硅、碳及氮。
5.根据权利要求1所述的隔离器，其中，还具备：
第一绝缘部，设置于所述第一电极与所述第二电极之间；以及
第三绝缘层，设置于所述第一电极与所述第一绝缘部之间，包含硅及氮。
6.根据权利要求5所述的隔离器，其中，
所述第三绝缘层还包含碳。
7.根据权利要求1所述的隔离器，其中，
还具备第四绝缘层，该第四绝缘层含有硅、碳及氮，
所述导电体包括：
第一导电部，沿着所述第一面而设置于所述第一电极的周围；
第二导电部，设置于所述第一导电部的一部分之上；以及
第三导电部，设置于所述第二导电部之上，沿着所述第一面而设置于所述第二电极的周围，
所述第四绝缘层设置于所述第二导电部的底部的周围，与所述第二导电部接触。
8.根据权利要求1所述的隔离器，其中，
与所述第一方向垂直的第二方向上的所述第二电极与所述导电体之间的距离，比所述第一方向上的所述第一电极与所述第二电极之间的距离长。
9.根据权利要求1所述的隔离器，其中，还具备：
第一电路，与所述第一电极电连接；以及
第二电路，与所述第二电极电连接。
10.根据权利要求1所述的隔离器，其中，
所述第一电极及所述第二电极设置成螺旋状。
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