CN113447787B - Power semiconductor device aging on-line diagnosis method - Google Patents
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Abstract
The invention discloses an aging on-line diagnosis method for a power semiconductor device, which is characterized in that based on the characteristics of specific electrical parameters of the power semiconductor device corresponding to different junction temperatures under different aging degrees, an aging diagnosis model related to the junction temperatures is established; according to the electrical data of the power semiconductor device in the actual working condition, junction temperature estimation is respectively carried out by combining a thermosensitive inductance parameter method and a thermal resistance network method, the judgment of the aging type of the power semiconductor device is realized by comparing the two obtained estimated junction temperatures, and then the diagnosis of the aging degree and the service life estimation are realized; the method improves the safety and the economic benefit of the power semiconductor device, and is a new idea in the field of aging pre-diagnosis of the power semiconductor device.
Description
Technical Field
The invention relates to the technical field of health management of power electronic equipment, in particular to an online diagnosis method for aging of a power semiconductor device.
Background
According to the reliability research report of the power electronic system, the power semiconductor device has the highest failure rate in the converter system, and accounts for about 34%. Among the various failure factors, the power electronic system failure induced by temperature factors accounts for up to 55%. A large number of test statistical data and failure mechanism analysis are obtained, and factors such as junction temperature swing amplitude, maximum junction temperature, average junction temperature, lowest shell temperature and in-cycle conduction time of the power device determine the maximum temperature cycle number which can be experienced before failure. Therefore, accurate extraction and detection of the junction temperature of the IGBT in the power semiconductor device are the basis of aging state diagnosis, service life estimation, health state management and reliability state evaluation.
The aging of the power semiconductor device can be mainly divided into chip aging and packaging aging, most researches on the existing aging analysis technology are from the perspective of heat sensitive parameters to research junction temperature change of the device, and are mapped to the failure degree of the device through off-line analysis, and the method is not practical, and an on-line diagnosis method considering both aging type judgment and aging degree estimation of the power semiconductor device is not provided.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to overcome the defects in the prior art, and provides an online diagnosis method for aging of a power semiconductor device.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
an aging on-line diagnosis method for a power semiconductor device adopts a junction temperature estimation method to judge the deviation degree of conduction power so as to judge the aging degree; two cases are included:
(1) Based on the electric heating characteristics of the power semiconductor device, comparing the sizes of two junction temperature parameters obtained by a thermosensitive inductance parameter method and a thermal resistance network method according to the characteristics of specific electric parameters corresponding to different junction temperatures under different aging degrees of the power semiconductor device, and judging the aging type of the power semiconductor device, namely chip aging or packaging aging;
(2) On the basis of judging the aging type, the deviation degree of the conduction power data of the power semiconductor device and the conduction power data of the normal power semiconductor device in the actual working condition is compared, and the aging degree of the power semiconductor device is diagnosed.
Preferably, the power semiconductor device is an IGBT.
Preferably, the power semiconductor device junction temperature monitoring method includes:
(1) Method for estimating junction temperature by thermosensitive inductance parameter method, selecting conduction power P 0 At the end of the on-state, i.e. before the start of the off-process, at time t 0 Power of P 0 ＝v ce (t 0 )·i c (t 0 ) Establishing a three-dimensional mapping relation of conduction power-current-junction temperature for thermosensitive inductive parameters; according to the on-state current I of the power semiconductor device in actual working conditions c ＝i c (t 0 ) And on power P 0 Obtaining a first estimated junction temperature T j1 ；
(2) A method for estimating junction temperature by using a thermal resistance network method comprises the steps of extracting thermal resistance parameters of unpackaged power semiconductor devices, and constructing an electric heating model, namely a thermal resistance network Z th ＝(T j -T c ) /P = DeltaT/DeltaP, shell temperature T c ＝T c (t 0 ) And thermal power data p (t) 0 ) Substitute for Chinese traditional medicineObtaining a second estimated junction temperature T j2 。
Preferably, the determination of the aging type is implemented as follows:
two junction temperature parameters were used: first estimated junction temperature T obtained by thermosensitive inductive electric parameter junction temperature estimation method based on conduction power j1 And a second estimated junction temperature T obtained based on the thermal resistance network junction temperature estimation method j2 ；
If T is j1 ＜T j2 The aging type of the power semiconductor device is chip aging. When the chip of the power semiconductor device is aged but the packaging is not aged, the first estimated junction temperature T is obtained by a method for estimating the temperature-sensitive inductive parameter junction temperature of the conduction power established based on a normal model after the chip is aged j1 The actual junction temperature of the power semiconductor device is lower than the actual junction temperature at the moment, the chip aging does not influence the inherent characteristics of the package, namely the thermal impedance parameters of the package are not changed, and the second estimated junction temperature T is obtained based on the thermal resistance network junction temperature estimation method j2 The actual junction temperature of the power semiconductor device at the moment;
if T is j1 ＞T j2 The aging type of the power semiconductor device is package aging. When the power semiconductor device is subjected to packaging aging but not subjected to chip aging, the packaging aging does not influence the inherent characteristics of the chip, and the first estimated junction temperature T is obtained by the method for estimating the temperature-sensitive inductive-electrical parameter junction temperature of the conduction power based on the normal model j1 For the actual junction temperature of the power semiconductor device at the moment, a second estimated junction temperature T is obtained based on a normal thermal resistance network junction temperature estimation method j2 Less than the actual junction temperature of the power semiconductor device at that time.
Preferably, said estimation of the degree of ageing is carried out as follows:
maintaining a case temperature T of a power semiconductor device c Constant, at the end of the on-state in the switching period in the temperature calibration experiment, i.e. at the time t before the start of the off-process 0 On-state current I of c Corresponding on-state power P 1 (ii) a Equivalent shell temperature T under actual operation condition c And equal on-current I c Corresponding to another conduction power P 2 ；
P 2 -P 1 Aging occurs by a deviation of the on-power Δ P = P 2 -P 1 The aging degree of the power semiconductor device is represented.
Preferably, the establishment of the junction temperature estimation model based on the thermal sensitive inductance parameter method and the thermal resistance network method of the conduction power comprises the following four steps:
the method comprises the following steps: temperature calibration experiment, extracting inherent parameters of normal IGBT, selecting a specific IGBT to perform experiment on a temperature calibration platform, and measuring collector current i in a single switching period of the IGBT under a certain current gradient and junction temperature gradient by adopting a controlled variable method c And collector-emitter voltage v ce A parameter signal;
step two: processing off-line data to obtain the conduction power of each experimental sample and establish a three-dimensional mapping relation table of the conduction power, the current and the junction temperature;
step three: extracting the thermal resistance network parameters of the IGBT according to a tested IGBT data manual;
step four: and constructing an electric heating model of the IGBT according to the extracted thermal resistance network parameters.
Preferably, the implementation of the junction temperature estimation based on the conduction power thermosensitive inductance parameter method and the thermal resistance network method comprises the following two steps:
the method comprises the following steps: data sampling, the sensing power semiconductor device is at the end of the conducting state in a switching period, namely at the time t before the starting of the turn-off process 0 Shell temperature T of c Collector-emitter voltage v ce Collector current i c To further obtain the on-state current I c Corresponding on-state power P 1 And thermal power data p (t) 0 )＝v ce (t 0 )·i c (t 0 )；
Step two: obtaining junction temperature and conducting current I c And corresponding on-power P 1 Substituting the first estimated junction temperature T obtained from the three-dimensional mapping table of conduction power-current-junction temperature established in claim 5 j1 (ii) a Heating the shell to T c And thermal power data p (t) 0 ) Substituting a second estimated junction temperature T obtained from the electrothermal model set forth in claim 5 j2 。
Preferably, the current I is switched on c And corresponding on-power P 1 Substituting the three-dimensional mapping relation table of the conduction power, the current and the junction temperature to obtain a first estimated junction temperature T j1 Then, a temperature-sensitive inductive parameter junction temperature estimation method based on the conduction power is adopted; at the shell temperature T c And thermal power data p (t) 0 ) Substituting a second estimated junction temperature T obtained from the electrothermal model set forth in claim 5 j2 And a thermal resistance network-based junction temperature estimation method is adopted.
Preferably, the on-state power P 0 The method for estimating the junction temperature of the thermosensitive inductive parameters adopts other thermosensitive inductive parameters to replace the thermosensitive inductive parameters according to the actual conditions, such as: conduction voltage drop v ce Off delay time t d_off 。
Compared with the prior art, the invention has the following obvious and prominent substantive characteristics and remarkable advantages:
1. the invention relates to an online diagnosis method for aging of a power semiconductor device, which carries out aging diagnosis by using a key aging factor, namely junction temperature;
2. the invention monitors the junction temperature respectively based on the heat-sensitive inductive electric parameter junction temperature estimation method and the heat resistance network junction temperature estimation method of the conduction power, realizes the judgment of the aging type of the power semiconductor device by comparing the two estimated junction temperatures, further realizes the diagnosis of the aging degree and the service life estimation, improves the safety and the economic benefit of the power semiconductor device, and provides a new thought for the online diagnosis and research of the aging of the power semiconductor device in the future;
3. the method is simple and easy to implement, low in cost and suitable for popularization and application.
Drawings
Fig. 1 is a schematic diagram of an online aging diagnosis method for a power semiconductor device according to the present invention.
Fig. 2 is a flowchart for judging the kind of aging and diagnosing the degree of aging according to the present invention.
Fig. 3 is a schematic diagram of the junction temperature estimation modeling of the present invention.
FIG. 4 is a schematic diagram of a temperature calibration test platform according to the present invention.
FIG. 5 is a schematic diagram of a temperature calibration test system of the present invention.
FIG. 6 shows the collector-emitter voltage v during a switching cycle according to the present invention ce Collector current i c And (5) a waveform schematic diagram.
Fig. 7 is a three-dimensional relationship diagram of the conduction power-current-junction temperature of the present invention.
Detailed Description
The above-described embodiments are further illustrated below with reference to specific examples, in which preferred embodiments of the invention are detailed below:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, an online diagnosis method for aging of a power semiconductor device, which adopts a junction temperature estimation method to determine a degree of on-state power offset, so as to determine the aging degree; two cases are included:
(1) Based on the electric heating characteristics of the power semiconductor device, comparing the sizes of two junction temperature parameters obtained by a thermosensitive inductance parameter method and a thermal resistance network method according to the characteristics of specific electric parameters corresponding to different junction temperatures under different aging degrees of the power semiconductor device, and judging the aging type of the power semiconductor device, namely chip aging or packaging aging;
(2) On the basis of judging the aging type, the deviation degree of the conduction power data of the power semiconductor device and the conduction power data of the normal power semiconductor device in the actual working condition is compared, and the diagnosis of the aging degree of the power semiconductor device is realized.
The junction temperature monitoring method of the power semiconductor device comprises the following steps:
(1) Method for estimating junction temperature by thermosensitive inductance parameter method, and conduction power P 0 At the end of the on-state, i.e. before the start of the off-process, at time t 0 Power of P 0 ＝v ce (t 0 )·i c (t 0 ) Establishing a three-dimensional mapping relation of conduction power-current-junction temperature for thermosensitive inductive parameters; according to the on-state current I of the power semiconductor device in actual working conditions c ＝i c (t 0 ) And on power P 0 To obtain a first estimated junction temperature T j1 ；
(2) Thermal resistance network methodThe method for estimating junction temperature comprises extracting thermal resistance parameters of unpackaged power semiconductor device, and constructing electrothermal model, i.e. thermal resistance network Z th ＝(T j -T c ) /P = DeltaT/DeltaP, shell temperature T c ＝T c (t 0 ) And thermal power data p (t) 0 ) Obtaining a second estimated junction temperature T by substitution j2 。
As shown in fig. 2, the determination of the aging type of the power semiconductor device is implemented as follows:
two junction temperature parameters were used: first estimated junction temperature T obtained by thermosensitive inductive electric parameter junction temperature estimation method based on conduction power j1 And a second estimated junction temperature T obtained based on the thermal resistance network junction temperature estimation method j2 ；
If T is j1 ＜T j2 The power semiconductor device aging type is chip aging. When the chip of the power semiconductor device is aged but the packaging is not aged, the first estimated junction temperature T is obtained by a method for estimating the temperature of the thermal sensitive inductive parameter junction temperature of the conduction power established based on the normal model after the chip is aged j1 The actual junction temperature of the power semiconductor device is lower than the actual junction temperature, the chip aging does not influence the inherent characteristics of the package, namely the thermal impedance parameter of the package is not changed, and the second estimated junction temperature T is obtained based on the thermal resistance network junction temperature estimation method j2 The actual junction temperature of the power semiconductor device at the moment;
if T j1 ＞T j2 The type of power semiconductor device burn-in is package burn-in. When the power semiconductor device is subjected to packaging aging but not subjected to chip aging, the packaging aging does not influence the inherent characteristics of the chip, and the first estimated junction temperature T is obtained by the method for estimating the temperature-sensitive inductive-electrical parameter junction temperature of the conduction power based on the normal model j1 For the actual junction temperature of the power semiconductor device at the moment, a second estimated junction temperature T is obtained based on the normal thermal resistance network junction temperature estimation method j2 Less than the actual junction temperature of the power semiconductor device at that time.
The estimation of the degree of ageing is achieved as follows:
maintaining a case temperature T of a power semiconductor device c Constant, at the end of the on-state in the switching cycle in the temperature calibration experimentAt the time t before the start of the shutdown process 0 On-state current I of c Corresponding on-power P 1 (ii) a Equivalent shell temperature T under actual operation condition c And equal on-current I c Corresponding to another conduction power P 2 ；
P 2 -P 1 Aging occurs by a deviation of the on-power Δ P = P 2 -P 1 The aging degree of the power semiconductor device is represented.
As shown in fig. 3, the establishment of the junction temperature estimation model based on the conduction power thermosensitive inductance parameter method and the thermal resistance network method mainly includes the following four steps:
the method comprises the following steps: temperature calibration experiment, extracting inherent parameters of normal IGBT, selecting a specific IGBT to perform experiment on a temperature calibration platform, and measuring collector current i in a single switching period of the IGBT under a certain current gradient and junction temperature gradient by adopting a controlled variable method c And collector-emitter voltage v ce A parameter signal;
step two: processing off-line data, obtaining the conduction power of each experimental sample, and establishing a three-dimensional mapping relation table of the conduction power, the current and the junction temperature;
step three: extracting the thermal resistance network parameters of the IGBT according to a tested IGBT data manual;
step four: and constructing an electrothermal model of the IGBT according to the extracted thermal resistance network parameters.
The first step and the second step are realized on a temperature calibration platform shown in figure 4, a schematic diagram shown in figure 5 is adopted, a single-phase inverter circuit is adopted for double-pulse testing, an IGBT module (model: FF50R12RT 4) of British flying is selected for testing, heating sheets on two sides of the module to be tested are started during the experiment, after the temperature of the temperature controller is displayed to be stable and maintained for 15 minutes, the temperature of a chip in the module is considered to be the same as the temperature in a box, collector currents 10A, 15A, 20A, 25A, 30A, 35A and 40A at the turn-off time are adjusted by changing the pulse width of the first pulse, and collector-emitter voltages v in single switching period of the IGBT at 30 ℃, 60 ℃, 90 ℃ and 120 ℃ are respectively tested ce Collector current i c Recording test data, collector-emitter voltage v in a single switching cycle ce Collector current i c The waveform is shown in FIG. 6; and performing data analysis offline, establishing a mapping relation table of the conduction power, the current and the junction temperature, performing data fitting, filling blank data, and drawing a three-dimensional relation graph of the conduction power, the current and the junction temperature.
As shown in fig. 7, a three-dimensional relationship diagram of on-state power-current-junction temperature is used to verify the correctness of the online aging diagnosis method for the power semiconductor device provided by the present invention. It can be seen that under the same working condition and different aging degrees, the first estimated junction temperature T obtained by the method for estimating the junction temperature of the thermosensitive inductive electrical parameter based on the conduction power is obtained by the method j1 And a second estimated junction temperature T obtained based on the thermal resistance network junction temperature estimation method j2 With a certain deviation. The result shows that the junction temperature of the IGBT is influenced by the aging degree, and for the aging state research of the IGBT, a thermal resistance network method and a thermal sensitive inductance parameter method can be applied to be combined to establish a combined model, and finally the aging state of the IGBT is determined.
According to the embodiment, junction temperature estimation is respectively carried out according to electrical data of the power semiconductor device in actual working conditions by combining a thermosensitive inductance parameter method and a thermal resistance network method, and the judgment of the aging type of the power semiconductor device is realized by comparing the two estimated junction temperatures, so that the diagnosis of the aging degree and the service life estimation are further realized.
The second embodiment:
this embodiment is basically the same as the first embodiment, except that:
the method for estimating the junction temperature of the thermosensitive electrical sensing parameter based on the conduction power in the online diagnosis method for the aging of the power semiconductor device can be replaced by other thermosensitive electrical sensing parameters according to actual conditions, such as: conduction voltage drop v ce Off delay time t d_off . The system sampling and operation cost is reduced, and the method is more economical and real-time.
In the method for diagnosing the aging of the power semiconductor device on line in the embodiment, based on the characteristics of the power semiconductor device, under different aging degrees, of specific electrical parameters corresponding to different junction temperatures, an aging diagnosis model of the power semiconductor device, which is relative to the junction temperatures, is established; according to the electrical data of the power semiconductor device in the actual working condition, respectively estimating junction temperature by combining a heat-sensitive inductance parameter method and a heat resistance network method, and by comparing the two estimated junction temperatures, judging the aging type of the power semiconductor device, and further realizing the diagnosis of the aging degree and the service life estimation; the method improves the safety and the economic benefit of the power semiconductor device, and is a new idea in the field of aging pre-diagnosis of the power semiconductor device.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the embodiments, and various changes and modifications can be made according to the purpose of the invention, and any changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the technical solution of the present invention shall be equivalent substitutions, as long as the purpose of the present invention is met, and the present invention shall fall within the protection scope of the present invention without departing from the technical principle and inventive concept of the present invention.
Claims (4)
1. An aging on-line diagnosis method for a power semiconductor device is characterized in that a junction temperature estimation method is adopted to judge the offset degree of conduction power so as to judge the aging degree; two cases are included:
(1) Based on the electric heating characteristics of the power semiconductor device, comparing the sizes of two junction temperature parameters obtained by a thermosensitive inductance parameter method and a thermal resistance network method according to the characteristics of specific electric parameters corresponding to different junction temperatures under different aging degrees of the power semiconductor device, and judging the aging type of the power semiconductor device, namely chip aging or packaging aging; the determination of the aging type is realized as follows:
two junction temperature parameters were used: first estimated junction temperature T obtained by thermosensitive inductive electric parameter junction temperature estimation method based on conduction power j1 And a second estimated junction temperature T obtained based on the thermal resistance network junction temperature estimation method j2 ；
If T j1 ＜T j2 The aging type of the power semiconductor device is chip aging;
if T is j1 ＞T j2 The aging type of the power semiconductor device is packaging aging;
(2) On the basis of judging the aging type, comparing the deviation degree of the conduction power data of the power semiconductor device and the conduction power data of the normal power semiconductor device in the actual working condition to realize the diagnosis of the aging degree of the power semiconductor device;
the diagnosis of the degree of ageing is effected as follows:
maintaining a case temperature T of a power semiconductor device c Constant, at the end of the on-state in the switching period in the temperature calibration experiment, i.e. at the time t before the start of the off-process 0 On-state current I of c Corresponding on-power P 1 (ii) a Equivalent shell temperature T under actual operation condition c And equal on-current I c Corresponding to another conduction power P 2 ；
By a deviation of the on-state power Δ P = P 2 -P 1 The aging degree of the power semiconductor device is represented.
2. The method for online diagnosis of the aging of the power semiconductor device as claimed in claim 1, wherein the method for estimating the junction temperature of the power semiconductor device comprises:
(1) Method for estimating junction temperature by thermosensitive inductance parameter method, and conduction power P 0 At the end of the on-state, i.e. before the start of the off-process, at time t 0 Power of (2) then P 0 ＝v ce (t 0 )·i c (t 0 ) Establishing a three-dimensional mapping relation of conduction power-current-junction temperature for thermosensitive inductive parameters; according to the conducting current I of the power semiconductor device in the actual working condition c ＝i c (t 0 ) And on power P 0 To obtain a first estimated junction temperature T j1 (ii) a Collector-emitter voltage v ce Collector current i c ；
(2) A method for estimating junction temperature by using a thermal resistance network method comprises the steps of extracting thermal resistance parameters of unpackaged power semiconductor devices, and constructing an electric heating model, namely a thermal resistance network Z th ＝(T j2 -T c ) /P, wherein T c The shell temperature is T, P is thermal power c Substituting the thermal power P to obtain a second estimated junction temperature T j2 。
3. The method for online diagnosing the aging of the power semiconductor device as claimed in claim 2, wherein the establishment of the junction temperature estimation model based on the thermal sensitive electrical parameter method of the conducted power and the thermal resistance network method comprises the following four steps:
the method comprises the following steps: temperature calibration experiment, extracting inherent parameters of normal IGBT, selecting a specific IGBT to perform experiment on a temperature calibration platform, and measuring collector current i in a single switching period of the IGBT under a certain current gradient and junction temperature gradient by adopting a controlled variable method c And collector-emitter voltage v ce A parameter signal;
step two: processing off-line data, obtaining the conduction power of each experimental sample, and establishing a three-dimensional mapping relation table of the conduction power, the current and the junction temperature;
step three: extracting the thermal resistance network parameters of the IGBT according to a tested IGBT data manual;
step four: and constructing an electrothermal model of the IGBT according to the extracted thermal resistance network parameters.
4. The on-line diagnosis method for the aging of the power semiconductor device as claimed in any one of claims 1 to 3, wherein the implementation of the junction temperature estimation based on the thermosensitive inductance parameter method of the conduction power and the thermal resistance network method comprises the following two steps:
the method comprises the following steps: data sampling, collecting the time t before the end of the on state, namely the turn-off process of the power semiconductor device in a switching period 0 Shell temperature T of c Collector-emitter voltage v ce Collector current i c To further obtain the on-current I c Corresponding on-state power P 0 And a thermal power P;
step two: obtaining junction temperature and conducting current I c And corresponding on-power P 0 Substituting the three-dimensional mapping relation table of the conduction power, the current and the junction temperature to obtain a first estimated junction temperature T j1 (ii) a Heating the shell to T c Substituting the thermal power P into the electric heating model to obtain a second estimated junction temperature T j2 。
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