CN113439332A - 光电固态阵列 - Google Patents
光电固态阵列 Download PDFInfo
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- CN113439332A CN113439332A CN202080015101.XA CN202080015101A CN113439332A CN 113439332 A CN113439332 A CN 113439332A CN 202080015101 A CN202080015101 A CN 202080015101A CN 113439332 A CN113439332 A CN 113439332A
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Abstract
本发明公开用于制造光电固态阵列装置的结构和方法。在一种情况下,背板和微型装置的阵列是通过凸块对准并连接。
Description
相关申请案的交叉引用
本申请案主张2020年1月16日申请的第62/962,027号美国临时专利申请案、2019年12月13日申请的第62/947,950号美国临时专利申请案、2019年10月11日申请的第62/913,790号美国临时专利申请案和2019年2月21日申请的第62/808,589号美国临时专利申请案的优先权和权益。这些申请案中每一案是通过全文引用的方式并入本文中。
技术领域
本公开涉及光电固态阵列装置且更具体地涉及使用可靠方法将微型装置阵列接合到背板。
发明内容
本公开涉及一种制造微型装置阵列的方法。所述方法包括提供具有一个或多个微型装置的衬底,所述微型装置的顶表面具有凸块;提供包括对应于所述微型装置上所述凸块的一个或多个凸块的背板;用至少一个平坦化层使所述微型装置与所述凸块之间的空间平坦化,使所述至少一个平坦化层图案化以清除所述凸块,使所述微型装置与所述背板对准并接触,及使所述至少一个平坦化层固化。
根据另一个实施例,一种微型显示器包括具有一个或多个微型装置的衬底,所述一个或多个微型装置的顶表面具有凸块;包括对应于所述一个或多个微型装置上所述凸块的一个或多个凸块的背板;覆盖所述微型装置与所述凸块之间的空间的至少一个图案化平坦化层,其中所述衬底和背板是通过使所述至少一个图案化平坦化层固化来对准并连接。
根据又另一个实施例,一种制造微型装置阵列的方法可包括以下步骤:提供在衬底的顶表面上具有凸块的微型装置的阵列,在所述衬底的一个或多个共同层形成至少一个共同接触件,将用于所述共同接触件的桥形成为接近所述微型装置的高度;形成电极以将所述共同接触件带到所述桥的顶部,在所述电极的顶部上形成至少一个共同凸块,提供包括对应于所述共同凸块和所述微型装置上的所述凸块的一个或多个凸块的背板,对准所述微型装置与所述背板并使其接触,及通过凸块将所述微型装置和所述背板接合在一起。
附图说明
在阅读以下详细描述后并在参考附图后将了解本公开的前述和其它优点。
图1A显示说明根据本发明的一个实施例的方法的流程图。
图1B显示说明根据本发明的一个实施例的方法的另一个流程图。
图2A显示根据本发明的一个实施例的微型装置衬底上的微型装置的阵列的横截面视图。
图2B显示根据本发明的一个实施例的在使粘合剂层图案化之后的图2A的微型装置阵列的横截面视图。
图2C显示根据本发明的一个实施例的与背板对准的微型装置阵列的横截面视图。
图2D显示根据本发明的一个实施例的通过凸块接合到背板的微型装置阵列的横截面视图。
图2E显示根据本发明的一个实施例的接合到背板和平坦化层的微型装置阵列的横截面视图。
图3A显示根据本发明的一个实施例的微型装置阵列的横截面视图。
图3B显示根据本发明的一个实施例的具有凸块的微型装置阵列的横截面视图。
图4A显示根据本发明的实施例的微型装置阵列的横截面视图。
图4B显示根据本发明的一个实施例的微型装置阵列的俯视图。
图4C到4E显示根据本发明的实施例的微型装置阵列的横截面视图。
图5A显示根据本发明的实施例的具有凸块、电介质层和平坦化层的微型装置阵列的横截面视图。
图5B显示根据本发明的实施例的具有凸块和蚀刻电介质层和平坦化层的微型装置阵列的横截面视图。
图6A显示在衬底上形成接合垫及使粘合剂层图案化以形成纳米柱。
图6B显示柱中的粘合剂在由于外部刺激导致导电外壳损坏时而暴露。
图7A显示两种类型的柱。
图7B显示具有两种类型的柱的接合工艺。
虽然本公开易于进行各种修改和替代形式,但特定实施例或实施案已通过实例在附图中显示且将在本文中详细描述。然而,应明了,本公开无意受限于所公开的特定形式。相反地,本公开将覆盖落在由随附权利要求书定义的本发明的精神和范围内的所有修改、等效物和替代物。
具体实施方式
除非另有定义,否则用于本文中的所有技术和科学术语具有与所属领域的技术人员通常所理解相同的含义。如本说明书和权利要求书中所使用,除非上下文另外清楚地指出,否则单数形式“一”、“一个”和“所述”包括多个指示物。如本文所用,术语“包括”应理解为表示随后的列表是非详述的且可包括或可不包括任何其它另外适当的项目,例如一个或多个另外特征、组件和/或元件,视情况而定。术语“装置”和“微型装置”在本文中可互换使用。然而,所属领域的技术人员知晓本文所述的实施例与装置尺寸无关。术语“柱”和“纳米柱”也如此。术语“凸块”还可与“柱”或“纳米柱”互换。
挑战之一是实施选择性转移微型装置且将微型装置接合到背板中。本公开涉及一种微型装置阵列显示装置,其中所述微型装置阵列可通过可靠方法接合到背板。另外,还公开使用凸块或纳米柱来辅助到背板中的接合工艺。微型装置是经制造于微型装置衬底上。微型装置衬底可包括微型发光二极管(LED)、无机LED、有机LED、传感器、固态装置、集成电路、微电子机械系统(MEMS)和/或其它电子组件。衬底可为装置层的天然衬底或装置层或固态装置所被转移到的受体衬底。
受体衬底可为任何衬底且可为硬质或柔性。系统衬底可由玻璃、硅、塑料或任何其它常用材料制成。系统衬底还可具有活性电子组件,如但不限于晶体管、电阻器、电容器或通常用于系统衬底中的任何其它电子组件。在一些情况下,系统衬底可为具有电信号行和列的衬底。系统衬底可为具有驱动微型LED装置的电路的背板。
在一个实施例中,微型装置的阵列可经转移或形成于微型装置衬底上,其中凸块是形成于至少一个微型装置的顶表面上。
在另一个实施例中,可提供背板。背板可以与微型装置衬底相同的方式来制备。背板可提供有对应于微型装置上的凸块的凸块/垫。
在一个实施例中,微型装置阵列或背板任一者中的凸块之间的空间是经粘合剂层填充且经图案化以从凸块移除过量粘合剂。粘合剂材料是从凸块的表面移除。在另一种情况下,材料是从凸块的侧面移除。在所述种情况下,粘合剂层与凸块之间的空间可经电介质层覆盖。
在一个实施例中,微型装置可经钝化层覆盖且微型装置之间的空间可在粘合剂层之前经电介质层填充。电介质层可为黑矩阵或反射的。
在另一个实施例中,粘合剂是可光界定的且使用直接光刻以从垫移除过量粘合剂。
在一些实施例中,凸块可为导电的。
在另一个实施例中,平坦化层可在覆盖微型装置高度的微型装置的阵列上或之上形成。所述平坦化层可为粘合剂层。
在另一个实施例中,粘合剂层是不导电的。
在一些实施例中,粘合剂层可为可光界定的。
在另一个实施例中,粘合剂层可使用光刻或第二层中任一者来图案化以从凸块周围、微型装置或凸块的顶表面移除过量粘合剂。所述第二层可为光致抗蚀层。
在其它实施例中,微型装置的背板和阵列可经对准并通过凸块连接。可施加压力,且可使用温度、光或微波暴露来固化及融合粘合剂层。
在一个实施例中,使用在背板或微型装置的垫上具有导电层和粘合剂层的柱状结构。施加压力、温度、光或其它能源会暴露粘合剂层且将微型装置接合到背板中,同时导电层会将所述装置耦接到所述背板中。
在又另一个实施例中,可在用平坦化层图案化之后在微型装置之上形成凸块。
在一个实施例中,微型装置阵列可在微型装置的下层具有至少一个共同接触件。在所述情况下,将桥/载台形成为接近微型装置的相同高度。桥可经一个或多个钝化层/电介质层钝化,其中所述电介质层或钝化层覆盖微型装置和桥/载台的侧壁和表面。
在另一个实施例中,可在形成凸块之前使用电极将低位共同接触件带到桥的顶部。在电极的顶部在桥的顶部于接近针对于微型装置形成的凸块的高度形成垫。
在一个实施例中,共同接触件的凸块是超过一个凸块的组合。在一种情况下,用于共同接触件的电极是覆盖阵列的超过一个侧面。
在一个实施例中,背板具有对应于微型装置阵列中的共同凸块的凸块。两个凸块是通过不同方式接合在一起。
在另一个实施例中,微型装置阵列可具有多个共同层。
在一个实施例中,可沉积电介质层以覆盖微型装置之间的至少经接合垫分离的区域。
在另一个实施例中,电介质层的暴露部分可经回蚀使得接合垫的顶表面是暴露/可接入的。
在一个实施例中,可在微型装置阵列之上形成平坦化层且进行回蚀使得其位于接合垫的顶表面下方。
在另一个实施例中,微型装置阵列可通过接合垫的暴露表面接合到另一衬底(包括不同组的接合垫和不同微型装置或电路)。
在本文提到的实施例中,粘合剂层可通过光或温度来固化。压力将会在背板的垫与微型LED之间提供电接触件同时粘合剂层提供机械稳定性。另外,粘合与导电垫之间的空间提供用于扩展/变形的空间以适应表面轮廓不均匀性。下文详细描述根据所提供的本结构和工艺的各种实施例。
参考图1,提供一种制造微型装置阵列的方法。所述方法包括步骤102,其中提供至少一个具有凸块的微型装置。在所述步骤期间,可在微型装置衬底上形成或转移至少一个微型装置。在微型装置衬底上可存在多个微型装置以形成微型装置阵列。在一种情况下,提供于所述至少一个微型装置上的凸块是导电的。微型装置阵列可具有一个或多个共同层。在一种情况下,所述共同层可为第二电极。在另一种情况下,共同层可包括活性层(例如量子阱)。微型装置可经钝化层覆盖。所述钝化层可在装置的顶部上具有开口以提供电耦接路径到所述微型装置。所述钝化层可包括反射器或不透明层。微型装置之间的空间可至少部分地经平坦化层填充,所述平坦化层还可为黑矩阵或反射器。
在一个实施例中,凸块可为欧姆接触层或厚导电层。为在微型装置上沉积凸块,可在多个装置层中的一者的上表面之上沉积导电层。所述导电层可为厚金属层或非金属层。可使用多种方法(如热蒸发、电子束沉积、溅射或涂布)来使用导电层沉积。所述导电层还可为不同金属或导电材料或层的组合。在一个实施例中,提供于欧姆接触层之上的厚导电层可用作凸块以将微型装置接合到系统衬底或背板。材料(如Ni/Au、Cr/Au或Ti/Au)的厚导电层可形成于欧姆接触层之上。
在图1的下一步骤104期间,至少一个平坦化层可沉积在微型装置和各凸块之上或周围以进行平坦化。所述微型装置可具有形成于其周围的一个或多个钝化层。在一种情况下,平坦化层可形成于微型装置的阵列上或之上且覆盖微型装置的高度。所述平坦化层可为粘合剂层。可存在可覆盖凸块的边缘周围的其余部分的第二粘合剂平坦化层。所述粘合剂层可包括聚酰胺、SU8、PMMA、BCB薄膜层、环氧树脂和可UV固化的粘合剂。可选择粘合剂材料使得在施加压力时其将会固化。粘合剂层可以多种方式施覆。例如,可将粘合剂施覆到任何或所有微型装置。然而,所述粘合剂层是不导电的。所述粘合剂层可为可光界定的且可使用光刻以使所述粘合剂层图案化。在下一步骤106期间,可制备粘合剂层以用于图案化(例如,软涂(softback))。取决于所述图案化步骤,粘合剂层可经历一些处理步骤。在直接光刻的情况下,所述粘合剂层通常是经软涂且使用屏蔽图案暴露于光。在间接图案化的情况下,在粘合剂层的顶部上形成另一屏蔽材料且通过光刻手段和湿式或干式蚀刻使屏蔽图案化。在另一种情况下,屏蔽是用于通过湿式或干式蚀刻在粘合剂中建立图案。
在下一步骤108期间,可使粘合剂图案化以从凸块的顶表面移除过量粘合剂。同样,可从凸块周围移除粘合剂以在接合工艺期间为粘合剂和凸块移动提供空间。由于粘合剂层是不导电的,故凸块的顶表面是经暴露以进行接触以将微型装置接合到背板。由于粘合剂层可为可光界定的,故可使用直接光刻以使所述粘合剂层图案化。同样,可使用第二层以使所述粘合剂层图案化以移除过量粘合剂。所述第二层可为光致抗蚀层。
在另一种情况下,粘合剂层包括功能性表面(例如,氧化物)和可与功能性表面形成接合的材料。
在一个实施例中,背板可以与微型装置衬底相同的方式来制备。背板可经制备具有在其上制造的导电凸块。接下来,第二粘合剂层可沉积在背板上的凸块上以进行平坦化且可经图案化以从凸块表面的顶部移除粘合剂且暴露金属接触件以进行连接。
在下一步骤110期间,可对准具有具有凸块和粘合剂层的微型装置和具有凸块和第二粘合剂层的背板的微型装置衬底。
在下一步骤112期间,在对准之后,可使背板与微型装置接触使得两侧上的凸块互连。在所述阶段,可施加压力,且可使用温度、光或微波暴露来使粘合剂层固化及融合。
还应注意,在步骤102到112期间进行的活动有时可彼此散置。在一个替代实施例中,可存在形成微型显示器的另一方法。
参考图1B,提供制造微型显示器或微型装置阵列的另一方法。所述方法包括:步骤104-2,其中在微型装置的阵列周围形成至少一个平坦化层。所述微型装置的阵列可经转移或形成于微型装置衬底上。平坦化层可沉积在微型装置的侧壁上(或其上方或其之上)以进行平坦化。所述微型装置可具有形成于其周围的一个或多个钝化层。在一种情况下,微型装置可包括一个平坦化层以覆盖所述微型装置的高度周围。所述平坦化层可为粘合剂层。所述粘合剂层可包括聚酰胺、SU8、PMMA、BCB薄膜层、环氧树脂和可UV固化的粘合剂。所述粘合剂层可为可光界定的且可使用光刻以图案化所述粘合剂层。
在下一步骤106-2期间,可制备粘合剂层以用于图案化(例如,软涂)。取决于所述图案化步骤,粘合剂层可经历一些处理步骤。在直接光刻的情况下,所述粘合剂层通常是经软涂且使用屏蔽图案暴露于光。在间接图案化的情况下,在粘合剂层的顶部上形成另一屏蔽材料,藉助于光刻和湿式或干式蚀刻使屏蔽图案化。此外,屏蔽是用于通过湿式或干式蚀刻在粘合剂中建立图案。
在下一步骤108-2期间,可使粘合剂图案化以从微型装置表面的顶部移除过量粘合剂。在一个实施例中,所述图案化在粘合剂层中建立通孔。由于粘合剂层是不导电的,因此可能需要沉积在微型装置的上的接触层。
在下一步骤120期间,可在至少一个微型装置之上提供凸块。可在粘合剂层的通孔/开口内部形成凸块。在一个实施例中,凸块可为欧姆接触层或厚导电层。为在微型装置上沉积凸块,可在多个装置层中的一者的上表面之上沉积导电层。可使用各种方法(如热蒸发、电子束沉积和溅射)来采用导电层沉积。所述导电层还可为不同金属或导电材料或层的组合。在一个实施例中,提供在欧姆接触层之上的厚金属层可用作凸块以将微型装置接合到系统衬底或背板。材料(如Ni/Au、Cr/Au或Ti/Au)的厚金属层可形成于欧姆接触层之上。
在一个实施例中,背板可以与微型装置衬底相同的方式来制备。背板可经制备具有在其上制造的导电凸块。接下来,第二粘合剂层可沉积在背板上的凸块上以进行平坦化且可经图案化以从凸块表面的顶部移除粘合剂且暴露金属接触件以进行连接。
在下一步骤110-2期间,可对准具有具有凸块和粘合剂层的微型装置和具有凸块和第二粘合剂层的背板的微型装置衬底。
在下一步骤112-2期间,在对准之后,可使背板与微型装置接触使得两侧上的凸块连接。在所述阶段,可施加压力且可使用温度、光或微波暴露来固化及融合粘合剂层。
图2A到2E可参考描述制造微型显示器的方法的图1A来描述。
参考图2A,可提供微型装置衬底202。微型装置206的阵列可经形成或转移到微型装置衬底202。微型装置206可为通常可以平坦批次制造的任何微型装置,包括但不限于LED、无机LED、OLED、传感器、固态装置、集成电路、MEMS和/或其它电子组件。所述微型装置阵列可具有共同层。在一种情况下,所述共同层可为第二电极。在另一种情况下,共同层可包括活性层(例如,量子阱)。所述微型装置可经钝化层覆盖。所述钝化层可在装置的顶部上具有开口以提供电耦接路径到所述微型装置。所述钝化层可包括反射器或不透明层。微型装置之间的空间可至少部分地经平坦化层填充,所述平坦化层还可为黑矩阵或反射器。
在一个实施例中,可在至少一个微型装置上提供凸块208。凸块是导电的。凸块可为欧姆接触层或厚导电层。为在微型装置上沉积凸块,可在多个装置层中的一者的上表面之上沉积导电层。所述导电层可为厚金属层或非金属层。可使用多种方法(如热蒸发、电子束沉积、溅射或涂布)来使用导电层沉积。所述导电层还可为不同金属或导电材料或层的组合。在一个实施例中,提供在欧姆接触层之上的厚导电层可用作凸块以将微型装置接合到系统衬底或背板。材料(如Ni/Au、Cr/Au或Ti/Au)的厚导电层可形成于欧姆接触层之上。
此外,可在微型装置206和凸块208上或周围沉积至少一个平坦化层204以进行平坦化。所述微型装置可具有形成于其周围的一个或多个钝化层。在一种情况下,微型装置可包括一个平坦化层以覆盖所述微型装置的高度周围。所述平坦化层204可为粘合剂层。可存在可覆盖凸块的边缘周围的其余部分的第二粘合剂平坦化层。所述粘合剂层可包括聚酰胺、SU8、PMMA、BCB薄膜层、环氧树脂和可UV固化的粘合剂。所述粘合剂层可为可光界定的且可使用光刻以使所述粘合剂层图案化。
参考图2B,可制备粘合剂层以用于图案化(例如,软涂)。取决于所述图案化步骤,粘合剂层可经历一些处理步骤。在直接光刻的情况下,所述粘合剂层通常是经软涂且使用屏蔽图案暴露于光。在间接图案化的情况下,在粘合剂层的顶部上形成另一屏蔽材料且通过光刻和湿式或干式蚀刻使屏蔽图案化。在另一种情况下,屏蔽是用于通过湿式或干式蚀刻在粘合剂中建立图案。
可使粘合剂图案化以从凸块表面的顶部移除过量粘合剂。同样,可从凸块周围移除粘合剂以在接合工艺期间为粘合剂和凸块移动提供空间。由于粘合剂层是不导电的,故凸块的顶表面是经暴露以进行接触以将微型装置接合到背板。在另一种情况下,粘合剂层包括功能性表面(例如,氧化物)和可与功能性表面形成接合的材料。
参考图2C,背板210可以与微型装置衬底相同的方式来制备。背板可经制备具有在其上制造的导电凸块212。接下来,第二粘合剂层204-2可沉积在背板210上的凸块212上以进行平坦化且可经图案化以从凸块表面的顶部移除粘合剂且暴露金属接触件以进行连接。在下一步骤中,可对准具有具有凸块208和粘合剂层204-1的微型装置206的微型装置衬底202和具有凸块212和第二粘合剂层204-2的背板210。
参考图2D,在对准之后,可使背板210与微型装置206接触以通过凸块(212、208)进行连接。在所述阶段,可施加压力,且可使用温度、光或微波暴露来固化及融合粘合剂层218。
参考图2E,可在微型装置206之间的空间上沉积另一平坦化层220。微型装置之间的空间可在粘合剂层之前填充电介质层。电介质层可为黑矩阵或反射的。
图3A到3B可参考描述制造微型显示器的另一方法的图1B来描述。参考图3A,微型装置306的阵列可经形成或转移于微型装置衬底302上。可在微型装置302上沉积平坦化层304以进行平坦化。微型装置306可具有形成于其周围的一个或多个钝化层。在一种情况下,微型装置可包括一个平坦化层以覆盖所述微型装置的高度周围。所述平坦化层304可为粘合剂层。所述粘合剂层可包括聚酰胺、SU8、PMMA、BCB薄膜层、环氧树脂和可UV固化的粘合剂。可制备粘合剂层以用于图案化(例如,软涂)。取决于所述图案化步骤,粘合剂层可经历一些处理步骤。在直接光刻的情况下,所述粘合剂层通常是经软涂且使用屏蔽图案暴露于光。在间接图案化的情况下,在粘合剂层的顶部上形成另一屏蔽材料且使用光刻和湿式或干式蚀刻使屏蔽图案化。同样地,屏蔽是用于通过湿式或干式蚀刻在粘合剂中建立图案。所述粘合剂层可为可光界定的且可使用光刻以使所述粘合剂层图案化。
在一个实施例中,可使粘合剂图案化以从微型装置表面的顶部移除过量粘合剂以建立开口308。
参考图3B,可在粘合剂层的开口308中的至少一个微型装置306之上提供凸块310。在一个实施例中,凸块310可为欧姆接触层或厚导电层。为在微型装置306上沉积凸块,可在多个装置层中的一者的上表面之上沉积导电层。可使用多种方法(如热蒸发、电子束沉积和溅射)来使用导电层沉积。所述导电层还可为不同金属或导电材料或层的组合。在一个实施例中,提供在欧姆接触层之上的厚金属层可用作凸块以将微型装置接合到系统衬底或背板。材料(如Ni/Au、Cr/Au或Ti/Au)的厚金属层可形成于欧姆接触层之上。
在一个实施例中,背板可以与微型装置衬底相同的方式来制备。背板可经制备具有在其上制造的金属凸块。接下来,第二粘合剂层可沉积在背板上的凸块上以进行平坦化且可经图案化以从凸块表面的顶部移除粘合剂且暴露金属接触件以进行连接。
另外,可对准具有具有凸块和粘合剂层的微型装置和具有凸块和第二粘合剂层的背板的微型装置衬底。
在对准之后,可使背板与微型装置接触使得两侧上的凸块连接。在所述阶段,可施加压力,且可使用温度、光或微波暴露来固化和融合粘合剂层。可在微型装置之间的空间上沉积另一平坦化层。
图4A到4E显示根据本发明的实施例的微型装置阵列的视图。
在一个实施例中,微型装置阵列可在微型装置的下层具有至少一个共同接触件。在所述情况下,将桥/载台形成为接近微型装置的相同高度。桥是经电介质层钝化。在微型装置上形成凸块之前,使用电极将低位的共同接触件带到桥/载台的顶部。将共同接触件的共同垫/凸块在桥/载台的顶部的电极的顶部上形成为接近针对于微型装置形成的凸块的高度。在一个实施例中,共同接触件的垫是超过一个垫的组合。在一种情况下,用于共同接触件的电极覆盖阵列的超过一个侧面。
在一个实施例中,背板具有对应于微型装置阵列中的共同凸块的凸块。两个凸块是通过不同手段接合在一起。
参考图4A,可提供衬底402。多个共同层404可沉积在衬底上。共同层404可包括额外装置层、缓冲层和/或活性层。可在共同层的顶层上制造微型装置410的阵列。在一种情况下,可进一步蚀刻掉所述共同层以在所述共同层上形成共同接触件420。可在蚀刻掉共同层之后沉积共同接触件420。共同接触件420可沉积为微型装置阵列周围的环或可进行分段。在一种情况下,将桥/载台418形成为接近微型装置410的相同高度。所述桥可经一个或多个钝化层/电介质层416钝化。所述电介质层或钝化层416覆盖微型装置和桥/载台418的侧壁和表面。
可沉积电极412以将共同接触件420带到桥/载台418的顶表面以提供与垫414之连接。所述垫414可为在蚀刻工艺期间形成的在微型装置周围的环。在一种情况下,所述垫414可为一些分离的垫的组合。所述桥/载台418和微型装置可在蚀刻工艺期间形成。在一个实施例中,可形成一个或多个钝化层或电介质层416以覆盖微型装置和载台层的侧壁和表面。
在另一种情况下,在微型装置阵列外部形成桥/载台418。所述载台可为与微型装置410类似的结构。所述载台或微型装置是经电介质层416覆盖。接触件420可经形成到共同层440。然后,通过电极412将接触件420带到载台418的顶部。垫/凸块414是在电极412的顶部上形成。所述电极412可经另一电介质层覆盖。至少一个钝化层/电介质层416的一部分是开放的以提供用于第一接触件408、第一垫406和微型装置的连接路径。第一垫406可存在于第一接触件408和装置层的顶部上。所述载台可为在阵列周围的连续环或几个较小载台的总称。
图4B显示图4A的俯视图,其中具有凸块406的微型装置410的阵列是在衬底上形成。在微型装置衬底上可形成共同层。在一种情况下,可进一步蚀刻掉所述共同层以在所述装置层上形成共同接触件420。可在蚀刻掉装置层之后沉积共同接触件420。共同接触件420可沉积为微型装置阵列周围的环或可进行分段。在一种情况下,将桥/载台418形成为接近微型装置410的相同高度。可沉积电极412以将共同接触件420带到桥/载台418的顶表面以提供与共同垫414的连接。所述共同垫414可为在蚀刻工艺期间形成的在微型装置周围的环。在一种情况下,所述共同垫414可为一些分离的垫的组合。所述桥/载台层418和微型装置可在蚀刻工艺期间形成。
图4C显示图4A的微型装置阵列和对粘合剂层的图案化。可在微型装置周围形成一个或多个平坦化层。在一种情况下,可沉积第一平坦化层以覆盖微型装置410的一部分或全部。可形成用于最终顶层的第二平坦化层。所述第二平坦化层可为粘合剂层420。每个平坦化层可具有多个层。所述第二平坦化层/粘合剂层可经图案化以在垫406的顶部上提供开口422。所述第一平坦化层不需要进行图案化。
参考4D,背板430可以与微型装置衬底相同的方式来制备。背板可经制备具有在其上制造的凸块/接触垫440。背板还可具有对应于微型装置阵列中的共同凸块的凸块440-1。接下来,第二粘合剂层420-2可沉积在背板430上的接触垫440上以进行平坦化且可经图案化以从接触垫的顶部移除粘合剂来开放接触垫的顶部。此外,可对准微型装置衬底和背板。
参考图4E,在对准之后,可使背板430与微型装置接触使得两侧上的凸块连接。在所述阶段,可施加压力,且可使用温度、光或微波暴露来固化及融合粘合剂层442。固化可在微型装置与背板之间产生永久性接合。可在微型装置之间的空间上沉积另一平坦化层。
参考图5A,可提供微型装置衬底502。微型装置504的阵列可经形成或转移到微型装置衬底502。微型装置504可为通常可以平坦批次制造的任何微型装置,包括但不限于LED、无机LED、OLED、传感器、固态装置、集成电路、MEMS和/或其它电子组件。所述微型装置阵列可具有共同层。在一种情况下,所述共同层可为第二电极。在另一种情况下,共同层可包括活性层(例如,量子阱)。
在一个实施例中,可在微型装置的顶部上形成接合垫/凸块506。在一种情况下,所述接合垫可用于蚀刻一些或全部微型装置层以完全或部分地分离微型装置。
所述接合垫可为导电的。在一个方面中,所述接合垫可为欧姆接触层或厚导电层。为在微型装置上沉积接合垫,可在多个装置层中的一者的上表面之上沉积导电层。所述导电层可为厚金属层或非金属层。可使用多种方法(如热蒸发、电子束沉积、溅射或涂布)来使用导电层沉积。所述导电层还可为不同金属或导电材料或层的组合。
在另一个实施例中,可沉积电介质层510以至少覆盖微型装置的分离的部分之间。所述电介质层可覆盖微型装置(和接合垫)的分离的部分的侧壁和/或垫的顶表面。可通过原子层沉积(ALD)、等离子增强化学气相沉积(PECVD)和其它形式的沉积来沉积电介质层。
在一个实施例中,可在微型装置504和接合垫506上或周围沉积至少一个平坦化层508以进行平坦化。所述微型装置可具有形成于其周围的一个或多个钝化层。在一种情况下,微型装置可包括一个平坦化层以覆盖所述微型装置的高度周围。在另一种情况下,可回蚀平坦化层使得其在接合垫的顶表面下方。
参考图5B,蚀刻电介质层512的暴露部分使得可接入/暴露接合垫506的顶表面。所述结构可通过接合垫的暴露表面接合到另一衬底(其可包括另一组接合垫和不同微型装置或电路)。
如图6A中显示,在衬底602上形成接合垫600。所述衬底可为具有微型装置的受体/背板或施体衬底。接合垫600可在微型装置上或其可提供到背板的接入。接合垫600可具有基础导电层604。所述基础导电层是耦接到微型装置或背板。使至少一个粘合剂层106图案化以形成一个纳米柱。柱的尺寸和高度可根据装置尺寸和接合参数进行调整。形成一个或多个导电层608以至少覆盖粘合剂柱606的部分。所述导电层608可为耦接到基础导电层604。另一导电层可内埋于所述粘合剂柱606中。
图6B显示接合过程。其中,使具有导电层624和接合垫626的另一衬底622接近接合垫600。接合垫626可具有类似粘合剂导电核心-外壳结构。当导电外壳106由于外部刺激(例如压力、光、电等)而损坏时,柱中的粘合剂608暴露。暴露的粘合剂可形成与垫626的接合。可通过外部源(如温度、光或电)来加速、引起或进行接合。在使用光作为固化源的情况下,导电外壳606可为针对于所述光源不透明的使得仅暴露的粘合剂受到影响。在所述情况下,非转移周期的部分的柱将不会暴露环氧树脂及因此光不会降低粘合剂材料的完整性。因此,其可用于下一转移/接合周期。
图7A显示另一实施例,其中在一个接合垫700中存在至少两种类型的柱。一种类型的柱是由粘合剂708或接合材料制成而另一类型的柱是由导电材料706制成。粘合剂柱708可由粘合剂或接合材料图案化。由导电材料制成的柱可由导电材料图案化。此等柱可在衬底702上的导电电极704的顶部上。所述衬底可为具有其它组件、层和装置的受体衬底,或其可为具有微型装置的施体衬底。
粘合剂柱208的形状可为不同的(例如,圆柱形、环形等)。粘合剂柱可分布在导电柱706之间、周围或内部。
图7B显示接合过程。其中,粘合剂柱710是由于外部刺激(例如压力、光、电等)而变形。变形的粘合剂柱710可形成与垫(或装置)726的接合。垫(或装置)726可在另一结构724上。结构724可为导电的释离层或接合层。接合可通过外部源(如温度、光或电)来加速、引起或进行。
在一种情况下,粘合剂柱可高于导电柱。其中,在接合工艺期间,来自另一衬底722的其它垫或装置(例如,微型装置或受体衬底)首先被附接到粘合剂柱。在转移期间或在转移之后,进一步的压力可将垫或装置从其它衬底连接到导电柱。导电柱可变形以用于进一步连接。粘合剂柱可在转移期间或在转移之后固化。转移是将微型装置从一个衬底(施体衬底)移动到另一衬底(受体衬底)的工艺。其中,粘合剂柱或粘合剂层将装置保持在适当位置。其中,接合垫存在于微型装置上或存在于受体衬底上。
在另一种情况下,粘合剂柱可短于导电柱或与导电柱相同。接合压力使导电柱变形且使垫或装置从另一衬底连接到粘合剂柱。转移期间或转移之后的固化会将装置保持在适当位置且连接到导电柱。
根据一个实施例,可提供一种制造微型装置阵列的方法。所述方法包括提供具有一个或多个微型装置的衬底,所述微型装置的顶表面具有凸块;提供包括对应于所述微型装置上所述凸块的一个或多个凸块的背板;用至少一个平坦化层使所述微型装置与所述凸块之间的空间平坦化,使所述至少一个平坦化层图案化以清除所述凸块,使所述微型装置与所述背板对准并接触;及使所述至少一个平坦化层固化。
根据又另一个实施例,所述方法进一步包括在使至少一个平坦化层固化之前施加压力,其中所述至少一个平坦化层是粘合剂层,及在微型装置上或之上在粘合剂层之前提供钝化层,其中所述钝化层为电介质层、黑矩阵或反射层。
根据一些实施例,使至少一个平坦化层图案化包括从凸块周围或微型装置或凸块的顶表面移除过量粘合剂,使至少一个平坦化层图案化包括通过直接光刻或施覆光致抗蚀层使至少一个平坦化层图案化,其中所述图案化平坦化层的表面是经功能化以接合到一些粘合剂材料。
根据其它实施例,使至少一个平坦化层固化包括通过热工艺或光学工艺中的一者固化及使微型装置之间的空间平坦化包括提供覆盖至少一个微型装置的高度周围的钝化层和电介质层以覆盖微型装置之间的空间,其中使凸块之间的空间平坦化从而提供覆盖凸块的边缘周围的粘合剂层。粘合剂层是不导电的,及凸块是导电的。
根据另一个实施例,可提供一种微型显示器。一种微型显示器,其包括具有一个或多个微型装置的衬底,所述一个或多个微型装置的顶表面具有凸块;包括对应于所述一个或多个微型装置上所述凸块的一个或多个凸块的背板;及覆盖所述微型装置与所述凸块之间的空间的至少一个图案化平坦化层,其中所述衬底和背板是通过使所述至少一个图案化平坦化层固化来对准并连接。
虽然已说明并描述本发明的特定实施例和应用,但应明了本发明并不受限于本文所公开的精确构造和组成且可在不脱离随附权利要求书所定义的本发明的精神和范围下从前述描述明白各种修改、改变和变化。
Claims (73)
1.一种制造微型装置阵列的方法,所述方法包括:
提供具有一个或多个微型装置的衬底,所述微型装置的顶表面具有凸块;
提供包括对应于所述微型装置上的凸块的一个或多个凸块的背板;
使用至少一个平坦化层来使所述微型装置与所述凸块之间的空间平坦化;
使所述至少一个平坦化层图案化以清除所述凸块;
对准所述微型装置与所述背板并使其接触;且使所述至少一个平坦化层固化。
2.根据权利要求1所述的微型显示器,所述方法进一步包括在使所述至少一个平坦化层固化之前施加压力。
3.根据权利要求1所述的微型显示器,其中所述至少一个平坦化层是粘合剂层。
4.根据权利要求1所述的微型显示器,所述方法进一步包括:
在所述微型装置上或之上在所述粘合剂层之前提供钝化层。
5.根据权利要求1所述的微型显示器,其中所述钝化层是电介质层、黑矩阵或反射层。
6.根据权利要求1所述的微型显示器,其中使所述至少一个平坦化层图案化包括从所述凸块的顶表面移除过量粘合剂。
7.根据权利要求1所述的微型显示器,其中使所述至少一个平坦化层图案化包括从以下中的一者移除过量粘合剂:所述凸块周围、微型装置或所述凸块的所述顶表面。
8.根据权利要求1所述的微型显示器,其中使所述至少一个平坦化层图案化包括通过直接光刻使所述至少一个平坦化层图案化。
9.根据权利要求1所述的微型显示器,其中使所述至少一个平坦化层图案化包括通过施覆光致抗蚀层使所述至少一个平坦化层图案化。
10.根据权利要求1所述的微型显示器,其中所述图案化平坦化层的表面是经功能化以接合到一些粘合剂材料。
11.根据权利要求1所述的微型显示器,其中使所述至少一个平坦化层固化包括通过热工艺或光学工艺中的一者固化。
12.根据权利要求1所述的微型显示器,其中使所述微型装置之间的空间平坦化包括提供覆盖所述至少一个微型装置的高度周围的钝化层和覆盖所述微型装置之间的空间的电介质层。
13.根据权利要求1所述的微型显示器,其中使所述凸块之间的空间平坦化提供覆盖所述凸块的边缘周围的粘合剂层。
14.根据权利要求1所述的微型显示器,其中所述粘合剂层是不导电的。
15.根据权利要求1所述的微型显示器,其中所述凸块是导电的。
16.一种微型显示器,其包括:
具有一个或多个微型装置的衬底,所述一个或多个微型装置的顶表面上具有凸块;
包括对应于所述一个或多个微型装置上的所述凸块的一个或多个凸块的背板;和
覆盖所述微型装置与所述凸块之间的空间的至少一个图案化平坦化层,其中所述衬底和所述背板是通过使所述至少一个图案化平坦化层固化来对准及连接。
17.根据权利要求12所述的微型显示器,其中所述背板是TFT。
18.根据权利要求12所述的微型显示器,其中所述至少一个图案化平坦化层是粘合剂层。
19.一种制造微型装置阵列的方法,所述方法包括:
提供在衬底的顶表面上具有凸块的微型装置的阵列;在所述衬底的一个或多个共同层形成至少一个共同接触件;将用于所述共同接触件的桥形成为接近所述微型装置的高度;
形成电极以将所述共同接触件带到所述桥的顶部;在所述电极的顶部上形成至少一个共同凸块;
提供包括对应于所述共同凸块和所述微型装置上的所述凸块的一个或多个凸块的背板;
对准所述微型装置与所述背板并使其接触;及通过凸块将所述微型装置和背板接合。
20.根据权利要求19所述的方法,所述方法进一步包括一个或多个钝化层以钝化所述桥和所述微型装置的侧壁和表面。
21.一种制造微型装置阵列的方法,所述方法包括:
提供具有一个或多个微型装置的微型装置衬底,所述微型装置的顶表面具有接合垫;和
在所述微型装置周围提供至少一个电介质层。
22.根据权利要求21所述的方法,其中在所述微型装置周围提供至少一个电介质层包括提供所述电介质层以覆盖微型装置的分离的部分的侧壁和所述接合垫。
23.根据权利要求21所述的方法,其中在所述微型装置周围提供至少一个电介质层包括提供所述电介质层以覆盖所述接合垫的顶表面。
24.根据权利要求21所述的方法,所述方法进一步包括:
蚀刻所述电介质层以暴露所述接合垫的所述顶表面。
25.根据权利要求22所述的方法,所述方法进一步包括:
使用至少一个平坦化层使所述微型装置与所述接合垫之间的空间平坦化;和
使所述至少一层平坦化层图案化以清除所述接合垫的所述顶表面。
26.根据权利要求22所述的方法,所述方法进一步包括:
提供包括对应于所述微型装置上的所述接合垫的一个或多个接合垫的另一衬底;和
通过所述微型装置上的所述接合垫的暴露的顶表面将所述另一个衬底接合到所述微型装置衬底。
27.一种制造微型装置阵列的方法,所述方法包括:
提供具有一个或多个微型装置的衬底,所述微型装置的顶表面具有凸块;
提供包括对应于所述微型装置上的凸块的一个或多个凸块的背板;
使用至少一个平坦化层使所述微型装置与所述凸块之间的空间平坦化;
使所述至少一个平坦化层图案化以清除所述凸块;
对准所述微型装置与所述背板并使其接触;且使所述至少一个平坦化层固化。
28.根据权利要求27所述的微型显示器,所述方法进一步包括在使所述至少一个平坦化层固化之前施加压力。
29.根据权利要求27所述的微型显示器,其中所述至少一个平坦化层是粘合剂层。
30.根据权利要求27所述的微型显示器,所述方法进一步包括:
在所述微型装置上或之上在所述粘合剂层之前提供钝化层。
31.根据权利要求27所述的微型显示器,其中所述钝化层是电介质层、黑矩阵或反射层。
32.根据权利要求27所述的微型显示器,其中使所述至少一个平坦化层图案化包括从所述凸块的顶表面移除过量粘合剂。
33.根据权利要求27所述的微型显示器,其中使所述至少一个平坦化层图案化包括从以下中的一者移除过量粘合剂:所述凸块周围、微型装置或所述凸块的顶表面。
34.根据权利要求27所述的微型显示器,其中使所述至少一个平坦化层图案化包括通过直接光刻使所述至少一个平坦化层图案化。
35.根据权利要求27所述的微型显示器,其中使所述至少一个平坦化层图案化包括通过施覆光致抗蚀层使所述至少一个平坦化层图案化。
36.根据权利要求27所述的微型显示器,其中所述图案化平坦化层的表面是经功能化以接合到一些粘合剂材料。
37.根据权利要求27所述的微型显示器,其中使所述至少一个平坦化层固化包括通过热工艺或光学工艺中的一者使所述至少一个平坦化层固化。
38.根据权利要求27所述的微型显示器,其中使所述微型装置之间的空间平坦化包括提供覆盖所述至少一个微型装置的高度周围的钝化层和覆盖所述微型装置之间的空间的电介质层。
39.根据权利要求27所述的微型显示器,其中使所述凸块之间的空间平坦化提供覆盖所述凸块的边缘周围的粘合剂层。
40.根据权利要求27所述的微型显示器,其中所述粘合剂层是不导电的。
41.根据权利要求27所述的微型显示器,其中所述凸块是导电的。
42.一种微型显示器,其包括:
具有一个或多个微型装置的衬底,所述一个或多个微型装置的顶表面上具有凸块;
包括对应于所述一个或多个微型装置上的所述凸块的一个或多个凸块的背板;和
覆盖所述微型装置与所述凸块之间的空间的至少一个图案化平坦化层,其中所述衬底和所述背板是通过使所述至少一个图案化平坦化层固化来对准及连接。
43.根据权利要求42所述的微型显示器,其中所述背板是TFT。
44.根据权利要求42所述的微型显示器,其中所述至少一个图案化平坦化层是粘合剂层。
45.一种制造微型装置阵列的方法,所述方法包括:
提供在衬底的顶表面上具有凸块的微型装置的阵列;
在所述衬底的一个或多个共同层形成至少一个共同接触件;
将用于所述共同接触件的桥形成为接近所述微型装置的高度;
形成电极以将所述共同接触件带到所述桥的顶部;
在所述电极的顶部上形成至少一个共同凸块;
提供包括对应于所述共同凸块和所述微型装置上的所述凸块的一个或多个凸块的背板;
对准所述微型装置与所述背板并使其接触;及通过凸块将所述微型装置和所述背板接合。
46.根据权利要求45所述的方法,所述方法进一步包括一个或多个钝化层以钝化所述桥和所述微型装置的侧壁和表面。
47.一种进行接合的方法,所述方法包括:
在衬底上形成具有基础导电层的第一接合垫;
由一个或多个粘合剂层形成为柱;
由一个或多个导电层形成导电外壳以覆盖所述粘合剂柱的部分;
当所述纳米柱的所述导电外壳暴露于外部刺激时,暴露所述粘合剂层;和
所述暴露的粘合剂层与第二接合垫形成接合。
48.根据权利要求47所述的方法,其中所述衬底是具有微型装置的受体或施体衬底。
49.根据权利要求47所述的方法,其中所述接合垫是在微型装置上或其可提供到所述背板的接入。
50.根据权利要求47所述的方法,其中所述基础导电层是耦接到所述微型装置或所述背板。
51.根据权利要求47所述的方法,其中所述导电外壳是经耦接到所述基础导电层。
52.根据权利要求47所述的方法,其中所述外部刺激的性质包括压力、光和电中的一者。
53.根据权利要求47所述的方法,其中所述接合是通过例如温度、光或电等外部源来加速、引发或进行。
54.根据权利要求47所述的方法,其中所述柱的尺寸和高度是根据装置尺寸和接合参数来调整。
55.根据权利要求47所述的方法,其中其它导电层可内埋在所述粘合剂柱内部。
56.根据权利要求47所述的方法,其中使用光作为固化源,所述导电外壳是针对于所述光源不透明,使得仅所述暴露的粘合剂层受到影响。
57.根据权利要求56所述的方法,其中不为转移周期的部分的所述柱不具有暴露的环氧树脂使得所述光源不会降低粘合剂材料的完整性从而使得所述柱可在下一转移或接合周期中再使用。
58.一种进行接合的方法,所述方法包括:
在衬底上形成具有基础导电层的第一接合垫;
由粘合剂材料或接合材料形成第一柱;
由导电材料形成第二柱;和
在所述第一柱与接合垫之间形成接合。
59.根据权利要求58所述的方法,其中所述衬底是具有微型装置的受体或施体衬底。
60.根据权利要求58所述的方法,其中所述接合垫是在微型装置上或其可提供到所述背板的接入。
61.根据权利要求58所述的方法,其中所述基础导电层是耦接到所述微型装置或所述背板。
62.根据权利要求58所述的方法,其中所述第一柱可高于所述第二柱。
63.根据权利要求58所述的方法,其中所述外部刺激的性质包括压力、光和电中的一者。
64.根据权利要求58所述的方法,其中所述接合是通过例如温度、光或电等外部源来加速、引发或进行。
65.根据权利要求62所述的方法,其中在所述接合工艺期间,来自受体衬底的微型装置首先被附接到所述第一柱。
66.根据权利要求62所述的方法,其中在所述接合工艺期间,来自所述受体衬底的垫首先被附接到所述第一柱。
67.根据权利要求58所述的方法,其中所述第一柱的形状可经成型为类似环或圆柱体。
68.根据权利要求67所述的方法,其中所述第一柱可分布在所述第二柱之间、周围或内部。
69.根据权利要求65所述的方法,其中在转移期间或在转移之后,进一步的压力可将所述垫或装置从所述受体衬底连接到所述第二柱。
70.根据权利要求69所述的方法,其中所述第二柱可变形以用于进一步连接。
71.根据权利要求58所述的方法,其中所述第一柱可短于所述第二柱或与所述第二柱相同。
72.根据权利要求71所述的方法,其中接合压力使所述第二柱变形且将所述接合垫或装置从所述受体衬底连接到所述第一柱。
73.根据权利要求72所述的方法,其中在所述转移工艺期间或之后的固化将所述微型装置保持在适当位置且将所述微型装置连接到所述第二柱。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962808589P | 2019-02-21 | 2019-02-21 | |
US62/808,589 | 2019-02-21 | ||
US201962913790P | 2019-10-11 | 2019-10-11 | |
US62/913,790 | 2019-10-11 | ||
US201962947950P | 2019-12-13 | 2019-12-13 | |
US62/947,950 | 2019-12-13 | ||
US202062962027P | 2020-01-16 | 2020-01-16 | |
US62/962,027 | 2020-01-16 | ||
PCT/IB2020/051492 WO2020170214A1 (en) | 2019-02-21 | 2020-02-21 | Optoelectronic solid state array |
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US (1) | US20220208738A1 (zh) |
CN (1) | CN113439332A (zh) |
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WO (1) | WO2020170214A1 (zh) |
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WO2022094718A1 (en) * | 2020-11-05 | 2022-05-12 | Vuereal Inc. | Dual microdevice driving |
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US20090115042A1 (en) * | 2004-06-04 | 2009-05-07 | Zycube Co., Ltd. | Semiconductor device having three-dimensional stacked structure and method of fabricating the same |
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-
2020
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