CN113423867A - 用于化学气相沉积的方法及设备 - Google Patents
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Abstract
本披露涉及一种用于在衬底上化学气相沉积的方法，该方法包括前体步骤和反应物步骤，其中该前体步骤包括在衬底(170)上化学吸附一层前体分子，并且其中该反应物步骤包括向衬底(170)表面的至少一部分添加能够还原该前体分子的物种，由此所还原的前体分子中的至少一部分沉积在该衬底(170)表面上，其特征在于在该反应物步骤的至少一部分期间通过电压源(130)向该衬底(170)表面的至少一部分施加正偏压，其中该添加还原物种的步骤包括通过电子源(150)提供电子作为自由粒子，由此在该反应物步骤期间，随着自由电子传输到该衬底(170)表面，形成闭合电路。
Description
技术领域
本披露涉及化学气相沉积。
背景技术
用于在表面上沉积材料薄膜的技术被用来形成从家用镜子的反射层到比如处理器等半导体装置的所有东西。期望的薄膜通常是导电的或半导电的。化学气相沉积(CVD)是用于从气态分子制造薄膜的技术，带有用于形成薄膜的原子的分子称为前体。CVD对电子行业是至关重要的，但就纯金属薄膜而论具有局限性。前体分子中的金属原子典型地处于正氧化态，即，它们缺电子。因此，金属原子形式上是正离子。对于金属的CVD，需要分子还原剂来提供缺失的电子以沉积金属膜。然而，许多金属很难还原，因为它们具有高的还原电势。因此，需要强还原剂。虽然已经证明了一些具有足够高还原能力的分子，但它们的化学合成复杂且难以用于CVD。
发明内容
根据上文，需要改进的沉积方法，这些方法使用包含具有高还原电势的原子的物种。
本发明的一个目的是改进导电和半导体材料的化学气相沉积。
根据本披露，这已经通过用于在衬底上化学气相沉积的方法实现，该方法包括前体步骤和反应物步骤。衬底表面的至少一部分与电压源电子地连接。前体步骤包括在衬底上化学吸附一层前体分子。反应物步骤包括向衬底表面的至少一部分添加能够还原前体分子的物种。该方法的特征在于在反应物步骤的至少一部分期间通过电压源向衬底表面的至少一部分施加正偏压，其中添加还原物种的步骤包括将由接地的电子源提供的自由电子传输到衬底表面的至少一部分，由此在反应物步骤期间，随着自由电子传输到衬底表面形成闭合电路。本文中的术语自由电子是指作为自由粒子的电子。本文中的术语衬底表面是指衬底和任何沉积材料的最外层。本文中的术语闭合电路是指在恒定的施加的正偏压的情况下连续基本保持通过衬底的电流的能力。
正偏压将电子吸引到与电压源电连接的衬底表面区域。如此获得的闭合电路防止在与电压源电子地连接的衬底表面区域上的负电荷积累。正偏压将电子吸引到衬底表面的电子地连接区域，其中电子可以还原前体分子。
使用自由电子来还原前体分子去除了将强还原剂传输到表面的需要。使用自由电子来还原前体分子可以去除在沉积期间改变环境条件的需要。主要在表面的连接区域使用自由电子还原前体分子可以允许新的和/或改进的技术产生半导体装置。
电子源可以是等离子体产生器。等离子体产生器通常用在为化学气相沉积设计的真空腔室中以提供前体。CVD机构中等离子体产生器的普遍使用允许在现有化学气相沉积系统中以最小修改来利用本披露。
该方法适合与任何能够化学吸附在导电衬底上的前体一起使用并且一旦还原随后在衬底上沉积该前体的至少一部分。前体可以是比如二茂铁、二茂钴、二茂镍或二茂钌等茂金属分子。
为了有效地继续构建膜层，沉积材料的表面和电压源需要保持电连接，因此沉积材料需要是导体或半导体。茂金属是一组包含处于正氧化态的金属原子的分子，比如二茂铁、二茂钴、二茂镍或二茂钌。导电表面上至少一些茂金属的还原导致金属原子在表面上的沉积。至少一些茂金属适合在本披露中用作前体分子。
为了还原衬底表面上的多层前体分子，该方法可以同时进行前体步骤和反应物步骤，或者使前体步骤和反应物步骤循环。然而，为了将电子吸引到衬底表面的区域，所述表面区域需要电连接到电压源。因此，如果还原的前体产生绝缘层，则前体分子的还原将最终停止。为了使方法连续构建层，前体分子包含可还原的原子，其中还原原子的固体材料至少是半导电的。例如，前体二茂铁可以被还原，因此前体中的铁原子在衬底上形成导电铁膜。衬底表面与电压源之间用于有效沉积的电连接的要求可用于控制层生长的位置，例如，通过使用用绝缘体材料(用比如光刻等的技术产生)图案化的衬底。本披露可以允许一种新的且改进的方式来生产集成电路的零件，比如Fin场效应晶体管(FinFET)中的鳍。
本披露涉及一种用于在衬底上化学气相沉积的设备。该设备包括衬底保持器、衬底、电压源和电子源。衬底保持器被布置成保持衬底。衬底表面的至少一部分包含化学吸附的前体分子。衬底表面的至少一部分电连接到电压源。电压源的负端子可以接地。电子源可以接地。电子源被布置成在衬底附近提供自由电子。该设备的特征在于，在操作期间通过电压源将正偏压施加到衬底表面的至少一部分。在操作期间，电子源和正衬底偏置两者都是有源的，并且自由电子被传输到衬底。该设备被布置成当自由电子行进到衬底时产生闭合电路。
该设备可以包括真空沉积腔室。衬底保持器和衬底位于真空沉积腔室内部。电压源和电子源可以与真空沉积腔室连接。真空沉积腔室允许在低压和受控环境下进行沉积。
该设备可包括包含加热器的升华腔室。加热器布置成保持和加热前体材料。升华腔室充当前体气化器并提供呈气相的前体分子。
附图说明
图1示意性地示出了用于CVD的设备
图2示意性地示出了用于真空腔室中CVD的设备
图3A和图3B示意性地描绘了两种CVD方法模式
具体实施方式
贯穿这些图，相同的附图标记是指相同的零件、概念和/或元件。因此，除非另外明确说明，否则关于一幅图中的附图标记的说明同样适用于其他图中的相同附图标记。
图1示意性地示出了用于CVD的设备100，该设备包括电压源130、衬底保持器140和电子源150。衬底保持器140被布置成保持衬底170。衬底170表面的至少一部分是导电的或半导电的。当衬底170安装在衬底保持器140中时，衬底表面170的至少一部分电连接到电压源130。电子源150接地。电子源150可由接地电源190控制。电压源130和衬底170可以经由被布置成与衬底170形成电连接的衬底保持器140的至少一部分电连接。
电子源150被布置成在衬底170附近提供自由电子。电子源150例如是等离子体产生器、电子流枪、场发射源或热离子源。本文中的术语自由电子是指作为自由粒子的电子。衬底170表面的至少一部分被化学吸附的前体分子覆盖。衬底170表面上的前体分子包括能够被自由电子还原的分子，比如二茂铁，由此所述前体分子的至少一部分沉积在衬底170表面上。
为了使由电子源150提供的足够量的自由电子到达衬底170表面，电压源130被布置成向衬底表面170的至少一部分施加相对于地的正电势。在衬底170表面与电压源130电子地连接的区域中，施加的电势减少电荷积累并吸引自由电子。在操作期间，随着电流流过衬底170，形成闭合电路。在操作期间，衬底170表面上能够被还原的前体分子的数量可能会耗尽，如果没有新的前体分子添加到表面170，由此沉积结束。
设备100可以包括前体提供布置，其能够在操作期间连续地化学吸附前体到衬底170表面。设备100可包括前体提供布置，其被布置成在操作设备100以进行将电子传输至衬底170表面的步骤之前进行将前体分子化学吸附至衬底170表面的步骤，从而通过在步骤之间循环来沉积多层。
图2示出了用于真空腔室中CVD的设备200。
在所示实例中，该设备包括真空沉积腔室110、升华腔室120和电压源130。真空沉积腔室110接地。真空沉积腔室110被配置为连接到泵。真空沉积腔室110包括衬底保持器140、等离子体产生器250、与泵的连接件111和与升华腔室120的连接件112。升华腔室120包括加热器160和与气体管线的连接件121。等离子体产生器250充当电子源150。腔室之间的连接件112和升华腔室120与气体管线之间的连接件121各自包括布置成关闭相应连接的阀。加热器160被布置成保持和加热前体材料。衬底保持器140被布置成保持衬底170，其中衬底170表面的至少部分可电连接到电压源130。电压源130被布置成向衬底170表面的电连接到电压源130的至少部分施加相对于地的正电势。等离子体产生器250接地。等离子体产生器250被布置成在等离子体产生区域180中提供等离子体。等离子体产生器250可由接地电源190控制。衬底140保持器基本上定位在等离子体产生区域180与腔室之间的连接件112之间。等离子体产生区域180基本上位于通向泵的连接件111与衬底保持器140之间。等离子体产生区域180与衬底保持器140之间的距离可以是大约几厘米。
图3A和图3B示意性地描绘了包括前体步骤310、反应物步骤320和沉积步骤330的两种CVD方法300A-B实例模式。其中前体步骤310包括在衬底170表面上化学吸附前体分子。其中反应物步骤320包括将自由电子传输至衬底170表面的至少一部分。沉积步骤330包括电子还原在衬底170表面上的前体分子，此后还原的前体分子中的至少一部分沉积在衬底170表面上。与用户控制的前体步骤310和反应物步骤320不同，沉积步骤330描述了衬底170表面处的化学反应和所得沉积。由于沉积步骤330在因果上依赖于前体步骤310和反应物步骤320，因此可以在没有沉积步骤330的情况下描述本披露。包括沉积步骤330以便阐明反应物步骤320如何不一定导致材料沉积在衬底170表面上。
图3A描述了方法300A的实例模式，其中前体步骤310和反应物步骤320同时开始，将前体分子和自由电子传输到衬底170表面，连续并与沉积步骤330平行运行，直到通过结束前体步骤310和/或反应物步骤320停止沉积。
图3B描述了方法300B的实例模式，其中前体步骤310和反应物步骤320以类似于在原子层沉积(ALD)中循环的自限制步骤的方式循环。进行前体步骤310直到足够量的前体分子化学吸附在衬底170表面上。例如，通过关闭通往包含气化的前体材料的升华腔室130的阀门，停止添加前体。进行反应物步骤320直到在衬底170表面上已经还原了足够量的前体分子，此时电子源150被关闭和/或衬底表面170处的偏置电压被改变。可以基于流过电压源130的电流来计算到达衬底170表面的自由电子的数目。在正常操作下，沉积步骤330基本上与反应物步骤320同时发生。然而，如果在衬底170表面上不存在可容易还原的前体分子，则在反应物步骤320期间不发生沉积步骤330。
回到图2，描述了利用本披露的CVD沉积程序的实例。真空沉积腔室110保持在室温下。最初，腔室之间的连接件112是关闭的。为了沉积铁，将前体材料二茂铁装入位于升华腔室120中的加热器160中。二茂钴、二茂镍或二茂钌可分别用于沉积钴、镍和钌。将在Si上包括50nm Ag膜的干净的10×10mm衬底170放置在衬底保持器140上。衬底保持器140和衬底170定位在与升华腔室120的连接器112与等离子体产生区域180之间。衬底170位于距等离子体产生区域180几厘米远的位置。衬底170和电压源130通过电引线连接，电引线与衬底170的Ag膜多点连接。引线与衬底的连接利用被布置成电连接到衬底170的衬底保持器140的至少一部分。真空沉积腔室110关闭并抽空。打开腔室之间的连接件112，由此两个腔室都被抽空至50Pa(0.4托)。升华腔室120与气体管线之间的连接件121打开并且升华腔室120用40sccm Ar气吹扫两小时。与气体管线的连接件121关闭，并且腔室被抽空至50Pa。腔室之间的连接件112关闭。加热器160将前体加热至前体升华温度，对于二茂铁而言为70℃。电压源在衬底170与地之间施加+40V DC，由此衬底170表面具有正偏压。同时等离子体产生器250启动，产生Ar等离子体(70W，40sccm)并且腔室之间的连接件112打开。随着二茂铁前体分子到达衬底170表面并被电子还原，Fe沉积在衬底170表面上。在300mA平均电流通过衬底170的情况下，在衬底表面上沉积薄膜持续60秒。同时Ar等离子体被关闭并且腔室之间的连接件112被关闭。真空沉积腔室110充满氮气(气体进口未示出)并且沉积完成。
Claims (11)
1.一种用于在衬底上化学气相沉积的方法(300A，B)，该方法包括
前体步骤(310)和
反应物步骤(320)，
其中该前体步骤(310)包括在衬底(170)上化学吸附一层前体分子，并且其中该反应物步骤(320)包括向衬底(170)表面的至少一部分添加能够还原该前体分子的物种，由此该化学吸附的前体分子的至少一部分被还原并且在该衬底(170)表面上沉积膜，
其特征在于，
在该反应物步骤(320)的至少一部分期间，通过电压源(130)向该衬底(170)表面的至少一部分施加正偏压，
其中添加还原物种的该步骤(320)包括通过电子源(150)提供电子作为自由粒子，
由此在该反应物(320)步骤期间随着自由电子被传输到该衬底(170)表面，形成闭合电路。
2.根据权利要求1所述的方法，其中，该前体分子包括可还原的原子或分子，其中还原的原子或分子的固体材料至少是半导电的。
3.根据权利要求1或2所述的方法，其中，这些前体分子包括比如二茂铁、二茂钴、二茂镍或二茂钌等茂金属分子。
4.根据任一前述权利要求所述的方法，其中，通过在该前体步骤(310)与该反应物步骤(320)之间交替来循环该前体步骤(310)和反应物步骤(320)。
5.根据任一前述权利要求所述的方法，其中，该衬底(170)最初用光刻和/或蚀刻技术图案化。
6.根据前述权利要求中任一项所述的方法，其中，该衬底(170)包括用绝缘材料掩蔽的导电衬底(170)，留下暴露的导电衬底(170)的区域，由此材料的沉积仅发生在该暴露的导电衬底(170)上，从而允许材料图案从暴露的衬底(170)区域生长。
7.一种包括鳍的FET，其中，至少该FET的鳍是根据权利要求6所述的方法制造的。
8.一种用于在衬底(170)上化学气相沉积的设备(100，200)，该设备包括，
用于保持该衬底(170)的衬底保持器(140)，其中前体分子被布置成沉积在该衬底(170)上，
电压源(130)，
前体分子还原物种源，其被布置成提供能够还原该衬底(170)表面处的前体分子的还原物种，
其特征在于，
其中该前体分子还原物种源包括电子源(150)，所述电子源(150)被布置成在该衬底170附近提供自由电子，
其中该电压源(130)被布置成向该衬底(170)表面的至少一部分施加正偏压，
由此这些自由电子当传输到该衬底(170)表面时形成闭合电路。
9.根据权利要求8所述的设备，其中，该电子源(150)包括等离子体产生器(250)。
10.根据权利要求8或9所述的设备，其包括被布置成提供呈气相的前体分子的前体气化器(120，160)。
11.根据权利要求8至10中任一项所述的设备，其包括真空腔室(110)，该真空腔室被布置成在受控的低压环境中容纳该衬底保持器(140)和衬底(170)。
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