CN113422297A - Nano water ion group generator - Google Patents

Abstract

The invention belongs to the field of disinfection, epidemic prevention and healthy air, and particularly relates to a nanometer water ion cluster generator. The device comprises at least one pair of P/N type semiconductor crystal grains, wherein the pair of P/N type semiconductor crystal grains consists of a P type semiconductor crystal grain and an N type semiconductor crystal grain, one end of the P/N type semiconductor crystal grain is a refrigerating end, and the other end of the P/N type semiconductor crystal grain is a heating end; the heat absorbing piece is used for acquiring the cold quantity generated by the refrigerating end and transmitting the cold quantity to the blocking piece; the blocking piece is used for conducting the cold energy obtained by the heat absorbing piece so as to obtain condensed water or air with high relative humidity; the ionization part is arranged on one side of the blocking part to absorb, collect or accumulate cold, condensed water or moisture in air with high relative humidity, and is electrically coupled to the high-voltage power supply to load a high-voltage electric field so as to ionize the air and the moisture around the ionization part under the action of electron avalanche effect to obtain at least one substance with nano particle size in charged particles and oxygen-containing free radicals.

Description

Nano water ion group generator

Technical Field

The invention belongs to the field of disinfection, epidemic prevention and healthy air, and particularly relates to a nanometer water ion cluster generator.

Background

The nanometer water ions are more and more concerned by people due to the advantages of biological activity, small particle size, strong permeability, stable performance, sterilization, disinfection, peculiar smell removal and the like. The existing nanometer water ion generator or device still has the following defects:

(1) the structural stability is poor: the thermoelectric crystal grain, the semiconductor crystal grain or the Peltier refrigerating unit are electrically connected with the discharge electrode and are exposed in the outside air, and the discharge electrode has a certain length and is easy to be damaged by the impact of outside factors under the lever effect, so that the semiconductor crystal grain is broken, dropped or fractured, the structural stability is poor, and the defective rate of products is greatly increased.

(2) The device has low efficiency: the air needs to be cooled to below the dew point temperature of the air, and the Peltier cooling unit has large resistance to heat conduction and electric conduction, low cooling efficiency and increased use cost and electric energy consumption.

(3) The content of charged particles is not convenient to adjust: because the thermoelectric crystal grain, the semiconductor crystal grain or the Peltier refrigerating unit are electrically connected with the discharge electrode, high voltage cannot be loaded on the discharge electrode at the same time, the refrigerating effect of the thermoelectric crystal grain is reduced, and even the thermoelectric crystal grain is damaged by high voltage breakdown.

(4) The condensed water is unstable: under the high-temperature or extremely-low-humidity (such as the relative humidity is less than 15%) air environment, the dew point temperature is extremely low, and the thermoelectric crystal grains or the Peltier refrigerating unit are difficult to condense under the condition to obtain condensed water, so that the release amount of nano water ions is reduced.

The nanometer water ion group generator provided by the invention can comprehensively solve the problems, has a compact structure, is safe and reliable, realizes miniaturization of the overall dimension, and has high refrigeration and heat dissipation efficiency.

Disclosure of Invention

The invention aims to provide a nanometer water ion group generator aiming at the defects of the prior art, which utilizes the Peltier thermoelectric effect to produce cold energy, and can be applied to various application scenes because the nanometer water ion group generator has stable structure, small size and low power consumption, does not need to add water.

In order to solve the technical problems, the following technical scheme is adopted:

nanometer water ion crowd generator, its characterized in that: the method comprises the following steps:

the pair of P/N type semiconductor crystal grains consists of a P type semiconductor crystal grain and an N type semiconductor crystal grain, one end of the P/N type semiconductor crystal grain is a refrigerating end, and the other end of the P/N type semiconductor crystal grain is a heating end;

the heat absorbing piece is electrically coupled to the refrigerating end of the P/N type semiconductor crystal grain, is used for acquiring the cold quantity generated by the refrigerating end and transmits the cold quantity to the blocking piece;

one side of the blocking piece is thermally coupled to the heat absorbing piece and used for conducting cold energy obtained by the heat absorbing piece so as to obtain condensed water or air with high relative humidity, and the other side of the blocking piece is provided with the ionization piece so as to isolate and protect the P/N type semiconductor crystal grains and prevent high-voltage power supply from leaking and discharging;

an ionization part provided at one side of the blocking part to suck, collect or accumulate condensed water or moisture in air of high relative humidity;

the release piece is arranged opposite to the ionization piece and is not in contact with the ionization piece;

the high-voltage power supply is electrically coupled with the releasing piece and the ionizing piece respectively, and is used for loading a high-voltage electric field between the releasing piece and the ionizing piece so as to ionize ambient air and moisture under the action of an electron avalanche effect to obtain at least one nano-particle-size substance of charged particles and oxygen-containing free radicals.

Further, the ionization part includes a water absorbing material composed of a porous medium composed of a fiber molding or a plurality of organic and/or inorganic fibers, to absorb, collect, or accumulate the condensed water or moisture in the air of high relative humidity while forming a multi-path discharge path.

Further, the ionization element is thermally coupled to the blocking element to draw, collect or accumulate condensed water or moisture in the air with high relative humidity on the blocking element, while reducing the temperature of the ionization element to further form an air environment with high relative humidity at and around the ionization element.

Further, the ionization part is spaced apart from the blocking part by a prescribed distance to sufficiently form a condensed water or high relative humidity air environment between the ionization part and the blocking part.

Further, the ionization element sucks, collects, or accumulates condensed water or moisture in air of high relative humidity between the ionization element and the blocking element.

Further, the ionization part is connected with a fixing part, and the fixing part is used for fixing the ionization part.

Furthermore, the ionization part also comprises a conductor, the conductor comprises an ionization part base part and an ionization part thimble part, the cross-sectional area of the ionization part base part is larger than that of the ionization part thimble part, the ionization part base part is arranged on one side of the blocking part to absorb cold energy, condensed water or moisture in air with high relative humidity on the blocking part, and the ionization part thimble part is far away from the blocking part to form a local concentrated electric field so as to easily ionize the surrounding air and moisture.

Further, the ionization part thimble portion is embedded in the water absorbing material to charge the water absorbing material, and the water absorbing material is composed of a fiber forming body or a plurality of organic and/or inorganic fibers to absorb, collect or accumulate the condensed water or the moisture in the air with high relative humidity, and simultaneously, a multi-path discharge path can be formed.

Further, the ionization part is spaced apart from the blocking part by a prescribed distance to sufficiently form a condensed water or high relative humidity air environment between the ionization part and the blocking part.

Further, the ionization element sucks, collects or accumulates condensed water between the ionization element and the blocking element or moisture in the surrounding air of high relative humidity.

Furthermore, one end of the ionization part, which is far away from the blocking part, is an ionization end, and the ionization end is a curved surface, so that a multi-channel discharge path is easily formed.

Further, the ionization part is connected with a fixing part, and the fixing part is used for fixing the ionization part.

The P/N type semiconductor crystal grain penetrates through and is embedded into the substrate, and the P/N type semiconductor crystal grain is used for protecting and packaging the P/N type semiconductor crystal grain.

Further, the barrier is composed of a material having a high dielectric constant or a high thermal conductivity.

The heat dissipation device further comprises a heat dissipation member electrically coupled to the heating end of the P/N type semiconductor crystal grain for obtaining the heat generated by the heating end and dissipating the heat.

Further, the heat sink is composed of a pair of heat sink conductors, and the heat sink is used for providing power for the P/N type semiconductor crystal grain on one hand and conducting away or dissipating heat generated by the heating end of the P/N type semiconductor crystal grain on the other hand.

Furthermore, a through hole groove is formed in the substrate close to the periphery of the heat absorbing piece or the heat radiating piece and used for heat insulation and heat radiation, cold quantity and heat quantity neutralization is prevented, and meanwhile, the high-voltage power supply is further isolated, and discharge leakage is prevented.

Further, an absolute value of a voltage applied to the discharging member is larger than an absolute value of a voltage applied to the ionizing member to reduce a concentration of charged particles in the nano-sized substance; alternatively, the absolute value of the voltage applied to the releasing member is smaller than the absolute value of the voltage applied to the ionizing member to increase the concentration of the charged particles in the nano-sized substance.

Furthermore, a through hole is formed in the release piece so as to form a local concentrated electric field, and the substances with the nanometer particle size are sprayed out of the through hole.

Due to the adoption of the technical scheme, the method has the following beneficial effects:

the invention relates to a nanometer water ion group generator, wherein a P/N type semiconductor crystal grain penetrates through and is embedded into a substrate to protect and package the P/N type semiconductor crystal grain. One side of the heat absorbing piece is electrically coupled to the refrigerating end of the P/N type semiconductor crystal grain, and the other side of the heat absorbing piece is thermally coupled to the blocking piece. Due to the protection and encapsulation of the substrate and the obstruction of the blocking piece, the semiconductor crystal grains can be prevented from being broken, fallen off or broken by the impact of external factors, and the stability of the device is improved.

The ionization part is made of water absorption material and is arranged on one side of the barrier part to absorb, collect or accumulate the condensed water or the moisture in the air with high relative humidity. The blocking piece has a surface area with high heat conduction and a small thickness, condensed water or air with high relative humidity can be fully obtained on the large surface of the blocking piece (the relative humidity of the air is high because the ambient air is cooled), the resistance of heat conduction is greatly reduced, meanwhile, due to the arrangement of the water absorbing material, the air with high relative humidity around the blocking piece does not need to be cooled to be below the dew point temperature of the air, the water in the air with high relative humidity around the blocking piece can be directly absorbed and accumulated, or the air with high relative humidity around the blocking piece is directly ionized to stably prepare nano water ions, so that the refrigeration temperature and the refrigeration efficiency are improved, the use cost and the electric energy consumption are reduced, the nano water ions can be still stably obtained in the air environment with high temperature or extremely low humidity (for example, the relative humidity is less than 15%), and the adaptability of the air environment of the device is enhanced.

The blocking member is made of a material with high dielectric constant or high heat conductivity, one side of the blocking member is thermally coupled to the heat absorbing member and used for conducting cold energy absorbed by the heat absorbing member so as to obtain condensed water or air with high relative humidity, and the other side of the blocking member is provided with the ionization member so as to isolate and protect the semiconductor crystal grains and prevent high-voltage power supply from leaking and discharging. The blocking part is used for efficiently transmitting the cold energy absorbed by the heat absorbing part, and a medium isolation layer is formed on the other hand, so that the ionization part is not electrically connected with the semiconductor crystal grain, high voltage can be directly loaded on the ionization part, a precondition is provided for achieving the aim of adjusting the concentration of charged particles in the nano water ion group by adjusting the loading mode of high voltage between the release part and the ionization part, and the application scene of the blocking part is expanded.

Drawings

The invention will be further described with reference to the accompanying drawings in which:

fig. 1 is a front perspective view of a nano-water ion cluster generating device according to an embodiment of the present invention.

Fig. 2 is a reverse perspective view of a nano-water ion cluster generating device according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of a nano-water ion cluster generating device according to embodiment 1 of the present invention.

Fig. 4 is a schematic cross-sectional view of a nano-water ion cluster generating device according to embodiment 2 of the present invention.

Fig. 5 is a schematic cross-sectional view of a nano-water ion cluster generating device according to embodiment 3 of the present invention.

FIG. 6 is a graph comparing the concentration of nano water ions released by the nano water ion generator under different relative humidity conditions.

Fig. 7 is a schematic cross-sectional view of a nano water ion cluster generator set fixture according to embodiment 2 of the present invention.

Fig. 8 is a schematic cross-sectional view of another fixing member of the nano-water ion cluster generator according to embodiment 2 of the present invention.

Fig. 9 is a schematic cross-sectional view of a nano-water ion cluster generating device according to embodiment 4 of the present invention.

In the figure: 1. the ionization device comprises a substrate, a heat absorbing piece, a barrier piece, a high-voltage power supply, a 51-lead A, a 52-lead B, a 6, an ionization piece II, a 7, a P/N type semiconductor crystal grain, a 7A-N type semiconductor crystal grain, a 7B-P type semiconductor crystal grain, a 8, a heat radiating piece, a 9, a hole groove, a 10, a releasing piece, a 101, a high-voltage power supply loading part, a 102, a through hole, a 11, condensed water or air with high relative humidity, a 12 and a fixing piece.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood, however, that the description herein of specific embodiments is only intended to illustrate the invention and not to limit the scope of the invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

Example 1

Referring to fig. 1 to 3, a nano water ion cluster generator according to an embodiment of the present invention includes main components: a heat sink 2, an N-type semiconductor die 7A, P, a heat sink 8, a blocking member 3, a release member 10, a high voltage power supply 5, and a substrate 1.

As a further description of the present embodiment, at least one pair of P/N type semiconductor crystal grains 7, the pair of P/N type semiconductor crystal grains 7 is composed of a P type semiconductor crystal grain 7B and an N type semiconductor crystal grain 7A, one end of the P/N type semiconductor crystal grain 7 is a cooling end for obtaining a temperature lower than the environment, i.e., cooling capacity, under the action of the thermoelectric effect; the other end of the P/N type semiconductor crystal grain 7 is a heating end for obtaining a temperature higher than the environment, i.e. heat under the action of thermoelectric effect.

As a further description of the embodiment, the heat absorbing member 2 is electrically coupled to the cooling end of the P/N type semiconductor die 7 for obtaining the cooling energy generated by the cooling end and transmitting the cooling energy to the blocking member 3.

As a further description of the present embodiment, the blocking member 3 is thermally coupled to the heat absorbing member 2 on one side of the blocking member 3 for conducting the cold energy obtained by the heat absorbing member 2 to obtain condensed water or air with high relative humidity, and the ionizing member is disposed on the other side of the blocking member 3 for isolating and protecting the P/N type semiconductor die 7 and preventing the high voltage power supply 5 from discharging.

As a further description of the present embodiment, the blocking member 3 may also be used to form a dielectric isolation layer to isolate and protect the P/N type semiconductor die 7, so as to prevent the high voltage power supply 5 from discharging, which may cause the degradation of the cooling effect of the semiconductor die, and even be damaged by the high voltage breakdown. The barrier 3 is made of a material having a high dielectric constant or high thermal conductivity, such as alumina, ceramic, quartz, epoxy, or the like.

As a further explanation of the present embodiment, an ionization member is provided on one side of the barrier member 3 to suck, collect, or accumulate moisture in condensed water or air of high relative humidity.

As a further explanation of the present embodiment, the release member 10 is disposed opposite to the ionization member and does not contact with each other.

As a further description of the present embodiment, the high voltage power supply 5, the releasing member 10 and the ionizing member are respectively electrically coupled to the high voltage power supply 5, so as to apply a high voltage electric field between the releasing member 10 and the ionizing member, and further ionize the ambient air and moisture under the electron avalanche effect, so as to obtain at least one nano-sized substance of the charged particles and the oxygen-containing free radicals. The formed nano-particle size substance is nano-water ion group.

Further, one side of the high voltage power supply 5 is electrically coupled to the release member 10 through a wire a51, and the other side of the high voltage power supply 5 is electrically coupled to the ionization member through a wire B52.

As a further description of the present embodiment, the nano-water ion cluster generator further includes a substrate 1, and the P/N type semiconductor die 7 is embedded through the substrate 1 for protecting and packaging the P/N type semiconductor die 7 to prevent the P/N type semiconductor die 7 from breaking, falling, breaking or corroding.

As a further description of the present embodiment, the nano-water ion cluster generator further includes a heat sink 8, wherein the heat sink 8 is electrically coupled to the heating terminal of the P/N type semiconductor die 7 for obtaining the heat generated by the heating terminal and dissipating the heat.

As a further description of the present embodiment, the heat sink 8 is composed of a pair of heat sink conductors 8A and 8B, and the heat sink 8 is used to provide power to the P/N type semiconductor die 7 on one hand and to conduct away or dissipate heat generated by the heat generating end of the P/N type semiconductor die 7 on the other hand.

As a further explanation of the present embodiment, a pair of heat sink conductors 8A and 8B are integrally formed, and the material between the heat sink conductors 8A and 8B is an insulating material, so that they are not electrically connected to each other, and thus the parts of the nano water ion group generator are fewer and more integrated.

As a further explanation of the present embodiment, the present embodiment employs the ionizing member ii 6, and the ionizing member ii 6 is made of a water absorbing material made of a porous medium made of a fiber molding or a plurality of organic and/or inorganic fibers, and the water absorbing material is configured to absorb, collect, or accumulate the condensed water or moisture in the air with high relative humidity, and simultaneously form a multi-path discharge path.

Further, the ionization element ii 6 is thermally coupled to the barrier 3 to absorb, collect or accumulate condensed water or moisture in the air with high relative humidity on the barrier 3, and simultaneously reduce the temperature of the ionization element ii 6 to further form an air environment with high relative humidity in the ionization element ii 6 and the surrounding area thereof.

Furthermore, one end, far away from the blocking piece 3, of the ionization piece II 6 is an ionization end, and the ionization end is a curved surface, so that a multi-channel ionization or discharge path is easily formed, and the generation amount of nano water ions is greatly increased.

Further, the ionization part II 6 can be a conductor or a nonconductor. When the ionization element ii 6 is a non-conductor, the condensed water or the moisture in the air with high relative humidity is sucked, collected or accumulated to become a conductor, and further, the discharge of the ambient air and moisture is induced.

As a further description of the present embodiment, the releasing member 10 is provided with a through hole 102 to form a locally concentrated electric field, and the nano water ion clusters are ejected from the through hole 102.

As a further explanation of the present embodiment, the release member 10 is provided with a high voltage power loading portion 101.

As a further description of the present embodiment, the concentration of the charged particles in the nano water ion group is adjusted by adjusting the loading manner of the high voltage electricity between the releasing member 10 and the ionizing member ii 6, so as to meet different scene requirements, that is: when the absolute value of the voltage applied to the release member 10 is greater than the absolute value of the voltage applied to the ionization member II 6, the charged particles in the nano water ion group are reduced due to the massive adsorption of the release member 10, at this time, the ionization member II 6 can be grounded or the voltage is low, and the release member 10 is connected with the high voltage, so that the production and the manufacture are convenient; when the absolute value of the voltage applied to the releasing member 10 is smaller than the absolute value of the voltage applied to the ionizing member II 6, the charged particles in the nano water ion group will increase, and at this time, the ionizing member II 6 is connected to a high voltage, and the releasing member 10 can be grounded or connected to a low voltage, so as to prevent the contact from electric shock.

The through hole grooves 9 are formed in the substrate 1 close to the periphery of the heat absorbing part 2 or the heat radiating part 8 and used for heat insulation and heat radiation, the neutralization of cold quantity and heat quantity is prevented, the natural convection or radiation heat radiation effect is strengthened to the maximum extent, the optimal refrigeration effect of the nanometer water ion group generating device is achieved, meanwhile, the high-voltage power supply 5 is further isolated, and discharge leakage is prevented.

Optionally, only the portion of the heat absorbing member 2 connected to the P-type semiconductor crystal grain 7B and the N-type semiconductor crystal grain 7A is made of a conductive material, and the rest is made of an insulating material with a high thermal conductivity, such as ceramic.

Optionally, only the portion of the heat sink 8 connected to the P-type semiconductor crystal grain 7B and the N-type semiconductor crystal grain 7A is made of a conductor material, and the rest is made of an insulating material with a high thermal conductivity, such as ceramic.

Optionally, the heat absorbing member 2 is circular, and may also be polygonal, square, or the like, so as to meet different application scenarios.

Optionally, the heat dissipation member 8 is sheet-shaped, and may also be in a zigzag shape, a ribbed sheet shape, or the like, so as to meet different application scenarios.

Optionally, the blocking member 3 is circular, and may also be in a zigzag shape, a square shape, or the like, so as to satisfy different application scenarios.

Due to the protection and encapsulation of the substrate 1 and the obstruction of the blocking member 3, the semiconductor crystal grains can be prevented from being broken, dropped or broken by the impact of external factors, and the stability of the device is improved. The actual measurement shows that the bonding strength between the semiconductor crystal grain and the device is greatly increased, and the capacity of resisting external impact force is increased by 2-5 times.

If the blocking member 3 is not arranged, the second electrode is electrically connected with the heat absorbing member 2 and further electrically connected with the P/N type semiconductor crystal grain 7, the ionization member II 6 is loaded with high voltage, and when the absolute value of the high voltage exceeds 100V, the P/N type semiconductor crystal grain 7 is not refrigerated any more and is even broken down to be damaged, and the serious leakage discharge condition occurs. Due to the fact that the blocking piece 3 is arranged, such as ceramic or alumina with high dielectric constant, even if the absolute value of high voltage loaded on the ionization piece II 6 reaches 10kV, the P/N type semiconductor crystal grains 7 can maintain normal work and refrigeration, and the condition of leakage discharge cannot occur. Due to the existence of the barrier member 3, high voltage can be directly loaded on the ionization member, so that a precondition is provided for achieving the aim of adjusting the concentration of charged particles in the nano water ion group by adjusting the loading mode of the high voltage between the release member 10 and the ionization member, and the application scene of the nano water ion group is expanded.

Example 2

As shown in fig. 4, the ionizing member ii 6 is spaced apart from the barrier 3 by a predetermined distance, so that condensed water or air 11 with high relative humidity is sufficiently formed between the ionizing member ii 6 and the barrier 3 to suck, collect or accumulate the condensed water on the barrier 3 or the moisture in the surrounding air 11 with high relative humidity.

In addition, in order to support and fix the ionization part II 6, the ionization part II 6 is connected with a fixing part 12, and the fixing part 12 can be connected to the base plate 1, so that the effect of supporting and fixing the ionization part II 6 is achieved.

Referring to fig. 7, the fixing member 12 is mounted on the base plate 1.

Referring to fig. 8, as a modification of this embodiment, a securing member 12 is mounted on the release member 10.

Example 3

As a modification of embodiment 1, as shown in fig. 5, the ionization element is composed of a conductor and a water absorbing material. At the moment, the ionization part adopts an ionization part I4 and an ionization part II 6 at the same time, and the ionization part II 6 is made of water absorption materials. The water absorbent material is composed of a porous medium.

The ionization part I4 is a conductor, the ionization part I4 comprises an ionization part base part 41 and an ionization part thimble part 42, the cross-sectional area of the ionization part base part 41 is larger than that of the ionization part thimble part 42, the ionization part base part 41 is thermally coupled to the barrier part 3, the ionization part thimble part 42 is embedded in the ionization part II 6 to charge the ionization part II 6 and support the ionization part II 6, and the ionization part II 6 is used for absorbing, collecting or accumulating cold, condensed water or moisture in air with high relative humidity on the barrier part 3 or the ionization part I4, and reducing the temperature of the ionization part II 6 to further form an air environment with high relative humidity at the ionization part II 6 and the periphery thereof.

Further, high voltage power supply 5 is electrically coupled to either ionizer i 4 or ionizer ii 6 via conductor B52. Preferably, the ionization element II 6 is made of a non-conductive material, and is more suitable for being electrically coupled to the ionization element I4.

At this time, if the blocking member 3 is not provided, at this time, the ionizing member i 4 or the ionizing member ii 6 is electrically connected to the heat absorbing member 2, and further electrically connected to the P/N type semiconductor crystal grain 7, at this time, a high voltage is applied to the ionizing member i 4 or the ionizing member ii 6, and when the absolute value of the high voltage exceeds 100V, the P/N type semiconductor crystal grain 7 is no longer refrigerated, even broken down to be damaged, and a serious leakage discharge condition occurs. Due to the fact that the blocking piece 3 is arranged, such as ceramic or alumina with high dielectric constant, even if the absolute value of high voltage loaded on the ionization piece I4 or the ionization piece II 6 reaches 10kV, the P/N type semiconductor crystal grains 7 can maintain normal work and refrigeration, and the condition of leakage discharge cannot occur. Due to the existence of the barrier member 3, high voltage can be directly loaded on the ionization member, so that a precondition is provided for achieving the aim of adjusting the concentration of charged particles in the nano water ion group by adjusting the loading mode of the high voltage between the release member 10 and the ionization member, and the application scene of the nano water ion group is expanded.

Example 4

As a modification of embodiment 2, as shown in fig. 9, the ionization member is composed of a conductor and a water absorbing material. The ionizing member is spaced apart from the blocking member 3 by a prescribed distance. At the moment, the ionization part adopts an ionization part I4 and an ionization part II 6 at the same time, and the ionization part II 6 is made of water absorption materials. The water absorbent material is composed of a porous medium.

The ionization part I4 is a conductor, the ionization part I4 comprises an ionization part base part 41 and an ionization part thimble part 42, the cross-sectional area of the ionization part base part 41 is larger than that of the ionization part thimble part 42, the ionization part base part 41 is thermally coupled to the barrier part 3, the ionization part thimble part 42 is embedded in the ionization part II 6 to charge the ionization part II 6 and support the ionization part II 6, and the ionization part II 6 is used for absorbing, collecting or accumulating cold, condensed water or moisture in air with high relative humidity on the barrier part 3 or the ionization part I4, and reducing the temperature of the ionization part II 6 to further form an air environment with high relative humidity at the ionization part II 6 and the periphery thereof.

Further, high voltage power supply 5 is electrically coupled to either ionizer i 4 or ionizer ii 6 via conductor B52. Preferably, the ionization element II 6 is made of a non-conductive material, and is more suitable for being electrically coupled to the ionization element I4.

At this time, if the blocking member 3 is not provided, at this time, the ionizing member i 4 or the ionizing member ii 6 is electrically connected to the heat absorbing member 2, and further electrically connected to the P/N type semiconductor crystal grain 7, at this time, a high voltage is applied to the ionizing member i 4 or the ionizing member ii 6, and when the absolute value of the high voltage exceeds 100V, the P/N type semiconductor crystal grain 7 is no longer refrigerated, even broken down to be damaged, and a serious leakage discharge condition occurs. Due to the fact that the blocking piece 3 is arranged, such as ceramic or alumina with high dielectric constant, even if the absolute value of high voltage loaded on the ionization piece I4 or the ionization piece II 6 reaches 10kV, the P/N type semiconductor crystal grains 7 can maintain normal work and refrigeration, and the condition of leakage discharge cannot occur. Due to the existence of the barrier member 3, high voltage can be directly loaded on the ionization member, so that a precondition is provided for achieving the aim of adjusting the concentration of charged particles in the nano water ion group by adjusting the loading mode of the high voltage between the release member 10 and the ionization member, and the application scene of the nano water ion group is expanded.

Other experimental data are shown in table 1 and fig. 6:

TABLE 1 Experimental data sheet for different nanometer water ion generators (ambient temperature 25 deg.C, relative humidity 55%)

As can be seen from table 1 and fig. 6:

(1) compared with the prior art, the ionization part made of water absorption material is arranged on one side of the barrier 3 to absorb, collect or accumulate the condensed water or the moisture in the air with high relative humidity. The blocking piece 3 has a surface area with high heat conduction and a small thickness, can fully obtain condensed water or air with high relative humidity on the larger surface of the blocking piece 3 (because the ambient air is cooled, the relative humidity of the air is high), greatly reduces the resistance of heat conduction, simultaneously can directly absorb and accumulate the moisture in the ambient air with high relative humidity or directly ionize the ambient air with high relative humidity without being refrigerated below the dew point temperature due to the arrangement of the water absorbing material, so as to stably prepare nano water ions, the release amount of the nano water ions is increased by more than 4 times, simultaneously improves the refrigeration temperature and the refrigeration efficiency, reduces the use cost and the electric energy consumption, reduces the power of the device by 37.5 percent, can stably obtain the nano water ions even in the air environment with high temperature or extremely low humidity (such as the relative humidity is less than 15 percent) and is hardly influenced, the adaptability of the air environment of the device is enhanced.

(2) The blocking member 3 is made of a material with a high dielectric constant or a high thermal conductivity, one side of which is thermally coupled to the heat absorbing member 2 for conducting the cold energy absorbed by the heat absorbing member 2 to obtain condensed water or air with high relative humidity, and the other side of which is provided with the ionizing member for isolating and protecting the semiconductor crystal grains and preventing the high voltage power supply 5 from leaking discharge. The blocking member 3 is used for efficiently transmitting the cold energy absorbed by the heat absorbing member 2, and on the other hand, a medium isolation layer is formed, so that the ionization member is not electrically connected with the semiconductor crystal grain, and therefore, high voltage can be directly loaded on the ionization member, a precondition is provided for achieving the purpose of adjusting the concentration of charged particles in the nano water ion group by adjusting the loading mode of the high voltage electricity between the releasing member 10 and the ionization member, and the application scene of the blocking member is expanded. When the absolute value of the voltage applied to the releasing member 10 is smaller than the absolute value of the voltage applied to the ionizing member ii 6, the number of charged particles in the nano water ion group is increased, for example, the ionizing member ii 6 is connected to a high voltage, the releasing member 10 can be grounded or connected to a low voltage, electric shock due to contact can be prevented, the releasing amount of charged particles is increased by more than 60 times, and the sterilizing effect is enhanced.

The above is only a specific embodiment of the present invention, but the technical features of the present invention are not limited thereto. Any simple changes, equivalent substitutions or modifications made on the basis of the present invention to solve the same technical problems and achieve the same technical effects are all covered in the protection scope of the present invention.

Claims (19)

1. Nanometer water ion crowd generator, its characterized in that: the method comprises the following steps:

the pair of P/N type semiconductor crystal grains consists of a P type semiconductor crystal grain and an N type semiconductor crystal grain, one end of the P/N type semiconductor crystal grain is a refrigerating end, and the other end of the P/N type semiconductor crystal grain is a heating end;

the heat absorbing piece is electrically coupled to the refrigerating end of the P/N type semiconductor crystal grain, is used for acquiring the cold quantity generated by the refrigerating end and transmits the cold quantity to the blocking piece;

one side of the blocking piece is thermally coupled to the heat absorbing piece and used for conducting cold energy obtained by the heat absorbing piece so as to obtain condensed water or air with high relative humidity, and the other side of the blocking piece is provided with the ionization piece so as to isolate and protect the P/N type semiconductor crystal grains and prevent high-voltage power supply from leaking and discharging;

an ionization part provided at one side of the blocking part to suck, collect or accumulate condensed water or moisture in air of high relative humidity;

the release piece is arranged opposite to the ionization piece and is not in contact with the ionization piece;

the high-voltage power supply is electrically coupled with the releasing piece and the ionizing piece respectively, and is used for loading a high-voltage electric field between the releasing piece and the ionizing piece so as to ionize ambient air and moisture under the action of an electron avalanche effect to obtain at least one nano-particle-size substance of charged particles and oxygen-containing free radicals.

2. The nano-water ion packet generator according to claim 1, wherein: the ionization part comprises a water absorbing material, the water absorbing material is composed of a porous medium, the porous medium is composed of a fiber forming body or a plurality of organic and/or inorganic fibers, and the water absorbing material is used for absorbing, gathering or accumulating the condensed water or the moisture in the air with high relative humidity and forming a multi-path discharge path.

3. The nano-water ion packet generator according to claim 2, wherein: the ionization element is thermally coupled to the barrier element to draw, collect or accumulate condensed water or moisture in the air with high relative humidity on the barrier element, while reducing the temperature of the ionization element to further create an air environment with high relative humidity at and around the ionization element.

4. The nano-water ion packet generator according to claim 1, 2 or 3, wherein: the ionization part and the blocking part are separated by a specified distance, so that condensed water or air environment with high relative humidity is fully formed between the ionization part and the blocking part.

5. The nano-water ion packet generator according to claim 4, wherein: the ionization element sucks, collects or accumulates condensed water or moisture in air of high relative humidity between the ionization element and the blocking element.

6. The nano-water ion packet generator according to claim 4, wherein: the ionization piece is connected with the mounting, the mounting is used for fixed ionization piece.

7. The nano-water ion packet generator according to claim 2, wherein: the ionization part also comprises a conductor, the conductor comprises an ionization part base part and an ionization part thimble part, the cross-sectional area of the ionization part base part is larger than that of the ionization part thimble part, the ionization part base part is arranged on one side of the blocking part to absorb cold energy, condensed water or moisture in air with high relative humidity on the blocking part, and the ionization part thimble part is far away from the blocking part to form a local concentrated electric field and easily ionize the surrounding air and moisture.

8. The nano-water ion packet generator according to claim 7, wherein: the ionization part thimble portion is embedded into the water absorbing material to charge the water absorbing material, and the water absorbing material is formed by a fiber forming body or a plurality of organic and/or inorganic fibers to absorb, collect or accumulate the condensed water or the moisture in the air with high relative humidity, and simultaneously a multi-path discharge path can be formed.

9. The nano-water ion packet generator according to claim 7 or 8, wherein: the ionization part and the blocking part are separated by a specified distance, so that condensed water or air environment with high relative humidity is fully formed between the ionization part and the blocking part.

10. The nano-water ion packet generator of claim 9, wherein: the ioniser picks up, collects or accumulates condensed water between the ioniser and the barrier or moisture from the surrounding high relative humidity air.

11. The nano-water ion packet generator of claim 10, wherein: one end of the ionization part, which is far away from the blocking part, is an ionization end, and the ionization end is a curved surface, so that a multi-channel discharge path is easily formed.

12. The nano-water ion packet generator of claim 9, wherein: the ionization piece is connected with the mounting, the mounting is used for fixed ionization piece.

13. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the P/N type semiconductor crystal grain penetrates through and is embedded into the substrate and used for protecting and packaging the P/N type semiconductor crystal grain.

14. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the barrier is constructed of a material having a high dielectric constant or high thermal conductivity.

15. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the heat dissipation device further comprises a heat dissipation member, wherein the heat dissipation member is electrically coupled to the heating end of the P/N type semiconductor crystal grain and used for acquiring heat generated by the heating end and dissipating the heat.

16. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the heat dissipation member is composed of a pair of heat dissipation member conductors, and the heat dissipation member is used for providing power for the P/N type semiconductor crystal grains on one hand and conducting away or dissipating heat generated by the heating ends of the P/N type semiconductor crystal grains on the other hand.

17. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the substrate close to the periphery of the heat absorbing element or the heat radiating element is provided with a through hole groove, the hole groove is used for heat insulation and heat radiation, cold quantity and heat quantity neutralization is prevented, and meanwhile, the high-voltage power supply is further isolated, and discharge leakage is prevented.

18. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: the absolute value of the voltage applied to the releasing member is greater than the absolute value of the voltage applied to the ionizing member to reduce the concentration of charged particles in the nano-sized substance; alternatively, the absolute value of the voltage applied to the releasing member is smaller than the absolute value of the voltage applied to the ionizing member to increase the concentration of the charged particles in the nano-sized substance.

19. The nano-water ion packet generator according to claim 1, 2, 3, 7 or 8, wherein: and the release piece is provided with a through hole so as to form a local concentrated electric field and eject the substances with the nanometer particle size from the through hole.

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