CN106992430A - The encapsulating structure of semiconductor laser - Google Patents
The encapsulating structure of semiconductor laser Download PDFInfo
- Publication number
- CN106992430A CN106992430A CN201710385249.2A CN201710385249A CN106992430A CN 106992430 A CN106992430 A CN 106992430A CN 201710385249 A CN201710385249 A CN 201710385249A CN 106992430 A CN106992430 A CN 106992430A
- Authority
- CN
- China
- Prior art keywords
- heat
- encapsulating structure
- conducting layer
- semiconductor laser
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 230000007704 transition Effects 0.000 claims abstract description 21
- 238000001816 cooling Methods 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 13
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical group [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- RQMIWLMVTCKXAQ-UHFFFAOYSA-N [AlH3].[C] Chemical compound [AlH3].[C] RQMIWLMVTCKXAQ-UHFFFAOYSA-N 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 abstract description 8
- 239000005439 thermosphere Substances 0.000 abstract description 2
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010905 molecular spectroscopy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of encapsulating structure of semiconductor laser, it includes conductive layer that is heat sink, being arranged at the heat sink top and the semiconductor laser and transition electrode that are arranged on the conductive layer, the semiconductor laser, the transition electrode are electrically connected with the conductive layer, the heat sink heat-conducting layer of at least one layer the 3rd including the first heat-conducting layer, the second heat-conducting layer and between first heat-conducting layer and second heat-conducting layer.The encapsulating structure for the semiconductor laser that the present invention is provided includes heat sink, the heat sink heat-conducting layer of at least one layer the 3rd including the first heat-conducting layer, the second heat-conducting layer and between first heat-conducting layer and second heat-conducting layer, it noise spectra of semiconductor lasers can effectively be radiated by the thermosphere, lift the performance of semiconductor laser.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of encapsulating structure of semiconductor laser.
Background technology
Semiconductor laser with its small volume, lightweight, voltage is low, power is big the features such as be widely used in optical fiber lead to
Letter, the detection of integrated photoelectricity, optical disc storage, pump light source, atmospheric environment, the analysis of trace toxic gas and Molecular Spectroscopy etc. and people
The closely bound up numerous areas of class life.Wherein, there is higher want certain fields for the power output of semiconductor laser
Ask.Under normal circumstances, the ridge of increase semiconductor laser is wide and increase operating current is the most direct side for improving power output
Formula, still, at the same time also results in the rise of semiconductor laser active area operationally temperature.Semiconductor laser is in work
Temperature when making has a significant impact to its threshold current density, slope efficiency and spectrum stability etc., and luminous zone overheat can cause
Luminous zone Cavity surface damage even device degradation, ultimately causes component failure, accordingly, it would be desirable to effectively be radiated.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of encapsulating structure of semiconductor laser, can effectively half-and-half
Conductor laser is radiated.
Concrete technical scheme proposed by the present invention is：A kind of encapsulating structure of semiconductor laser, the encapsulation knot are provided
Structure includes conductive layer that is heat sink, being arranged at the heat sink top and the semiconductor laser being arranged on the conductive layer and transition
Electrode, the semiconductor laser, the transition electrode are electrically connected with the conductive layer, described heat sink including the first heat conduction
Layer, the second heat-conducting layer and the heat-conducting layer of at least one layer the 3rd between first heat-conducting layer and second heat-conducting layer.
Further, the material of first heat-conducting layer and second heat-conducting layer is tungsten-copper alloy, and/or described
The material of three heat-conducting layers is aluminium silicon carbide, aluminium carbon, carborundum or aluminium silicon.
Further, the encapsulating structure also includes being arranged at the heat sink interior water-cooling channel, the water-cooling channel bag
Include the inlet and outlet for being respectively used to be connected with recirculated water low-temperature receiver.
Further, the water-cooling channel is serpentine-like.
Further, the encapsulating structure also includes the fan for being arranged at the heat sink bottom.
Further, the encapsulating structure also include be arranged at the fan and it is described it is heat sink between fins set.
Further, the encapsulating structure also includes the overcurrent protective device being arranged on the transition electrode, the mistake
Protection device is flowed to be electrically connected with the transition electrode.
Further, the overcurrent protective device is fuse.
Further, the encapsulating structure also includes shell, and the semiconductor laser is arranged at the inside of the shell,
Launch window corresponding with the semiconductor laser is offered on the shell.
Further, the through hole for connecting external power supply is additionally provided with the shell.
The encapsulating structure for the semiconductor laser that the present invention is provided include it is heat sink, it is described heat sink including the first heat-conducting layer, the
Two heat-conducting layers and the heat-conducting layer of at least one layer the 3rd between first heat-conducting layer and second heat-conducting layer, by described
Thermosphere effectively noise spectra of semiconductor lasers can be radiated, and lift the performance of semiconductor laser.
Brief description of the drawings
Pass through the following description carried out with reference to accompanying drawing, above and other aspect, feature and the advantage of embodiments of the invention
It will become clearer, in accompanying drawing：
Fig. 1 is the structural representation of the encapsulating structure of semiconductor laser；
Fig. 2 is the structural representation of water-cooling channel.
Embodiment
Hereinafter, with reference to the accompanying drawings to embodiments of the invention are described in detail.However, it is possible to come real in many different forms
Apply the present invention, and the specific embodiment of the invention that should not be construed as limited to illustrate here.It is opposite that there is provided these implementations
Example is in order to explain the principle and its practical application of the present invention, so that others skilled in the art are it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
Reference picture 1, the encapsulating structure for the semiconductor laser that the present embodiment is provided includes heat sink 1, conductive layer 2, semiconductor
Laser 3 and transition electrode 4.Conductive layer 2 is located at heat sink 1 top, and semiconductor laser 3 and transition electrode 4 are located at conductive layer 2
On.Semiconductor laser 3, transition electrode 4 are electrically connected with conductive layer 2.Heat sink 1 includes the first heat-conducting layer 11, the second heat conduction
Layer 12 and the heat-conducting layer 13 of at least one layer the 3rd between the first heat-conducting layer 11 and the second heat-conducting layer 12.
Semiconductor laser 3 is its negative pole with the one side in electrical contact of conductive layer 2, and semiconductor laser 3 is away from conductive layer 2
One side be its positive pole.The positive pole of semiconductor laser 3 is connected by the positive pole of wire and external power supply, and its negative pole is successively with leading
Electric layer 2, transition electrode 4 are connected and are connected through transition electrode 4 with the negative pole of external power supply.
Specifically, the material of the first heat-conducting layer 11, the second heat-conducting layer 12 is tungsten-copper alloy, the material of the 3rd heat-conducting layer 13 is
Aluminium silicon carbide, aluminium carbon, carborundum or aluminium silicon.Heat sink 1 in the present embodiment includes at least three layers heat-conducting layer and each layer of heat-conducting layer
Highly thermally conductive material is used, therefore, effectively noise spectra of semiconductor lasers 3 can be radiated by heat sink 1.
Encapsulating structure in reference picture 2, the present embodiment also includes the water-cooling channel 5 being arranged in heat sink 1, water-cooling channel 5
Including the import 51 and outlet 52 for being respectively used to be connected with recirculated water low-temperature receiver.Plane and heat sink 1 top surface where water-cooling channel 5
It is parallel, its run through heat sink 1 multiple heat-conducting layers, import 51 and outlet 52 be respectively positioned on heat sink 1 side and positioned at heat sink 1 it is same
On side.In the course of work of semiconductor laser 3, connected by water-cooling channel 5 after recirculated water low-temperature receiver, flow through water-cooling channel 5
Liquid can take away the heat in heat sink 1, with allow heat sink 1 further noise spectra of semiconductor lasers 3 radiated.It is excellent
Choosing, water-cooling channel 5 is serpentine-like.
For further improving radiating effect, encapsulating structure also includes being arranged at the fan 6 of heat sink 1 bottom and set
Fins set 7 between fan 6 and heat sink 1.Heat sink 1 radiating can be accelerated by fan 6, can be increased by fins set 7
Heat sink 1 area of dissipation, so as to further noise spectra of semiconductor lasers 3 can be radiated by fan 6 and fins set 7.
In addition, encapsulating structure also includes the overcurrent protective device 8 being arranged on transition electrode 4, overcurrent protective device 8 and mistake
Electrode 4 is crossed to be electrically connected with.Mounting groove (figure is not marked) is provided with transition electrode 4, overcurrent protective device 8 is installed in mounting groove.
Transition electrode 4 is connected with external power supply by overcurrent protective device 8, thus semiconductor laser 3, conductive layer 2, transition electrode 4,
Overcurrent protective device 8 and external power supply one conductive loops of formation.Overcurrent protective device 8 in the present embodiment is fuse, when
When the size of electric current exceedes certain value, overcurrent protective device 8 can disconnect, above-mentioned conductive loops disconnection be transition electrode 4 with it is external
Power supply is disconnected, and semiconductor laser 3 is stopped, so as to avoid damaging semiconductor laser.
The encapsulating structure of the present embodiment also includes shell 9, and shell 9 includes upper lid 91 and housing 92, and upper lid 91 is covered on shell
On body 92.Semiconductor laser 3 is arranged in housing 92.It is preferred that, heat sink 1, conductive layer 2, transition electrode 4, fins set 7 and mistake
Stream protection device 8 is respectively positioned in housing 92, and fan 6 is installed in the bottom of housing 92.Offered on housing 92 and semiconductor laser
The corresponding launch window 92a of laser emitting surface of device 3, laser outgoing from launch window 92a that semiconductor laser 3 is launched.
Through hole 92b is further opened with housing 92, the wire being connected with semiconductor laser 3, overcurrent protective device 8 or fan 6 passes through logical
Hole 92b is connected with external power supply.
The encapsulating structure of semiconductor laser in the present embodiment is logical by heat sink 1, fan 6, fins set 7 and water cooling
The noise spectra of semiconductor lasers 3 of road 5 carries out multiple heat dissipation, greatly improves radiating effect, improves the performance of semiconductor laser 3.
Protected in addition, can be very good noise spectra of semiconductor lasers 3 by overcurrent protective device 8, it is to avoid electric current is excessive and damages
Semiconductor laser 3.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (10)
1. a kind of encapsulating structure of semiconductor laser, it is characterised in that including it is heat sink, be arranged at the conduction at the heat sink top
Layer and the semiconductor laser and transition electrode being arranged on the conductive layer, the semiconductor laser, the transition electrode
It is electrically connected with the conductive layer, it is described heat sink including the first heat-conducting layer, the second heat-conducting layer and positioned at first heat-conducting layer
The heat-conducting layer of at least one layer the 3rd between second heat-conducting layer.
2. encapsulating structure according to claim 1, it is characterised in that first heat-conducting layer and second heat-conducting layer
Material is tungsten-copper alloy, and/or the material of the 3rd heat-conducting layer is aluminium silicon carbide, aluminium carbon, carborundum or aluminium silicon.
3. encapsulating structure according to claim 1, it is characterised in that also lead to including being arranged at the heat sink interior water cooling
Road, the water-cooling channel includes the inlet and outlet for being respectively used to be connected with recirculated water low-temperature receiver.
4. encapsulating structure according to claim 3, it is characterised in that the water-cooling channel is serpentine-like.
5. encapsulating structure according to claim 1, it is characterised in that the also fan including being arranged at the heat sink bottom.
6. encapsulating structure according to claim 5, it is characterised in that also including be arranged at the fan with it is described it is heat sink it
Between fins set.
7. encapsulating structure according to claim 1, it is characterised in that the also excessively stream including being arranged on the transition electrode
Protection device, the overcurrent protective device is electrically connected with the transition electrode.
8. encapsulating structure according to claim 7, it is characterised in that the overcurrent protective device is fuse.
9. the encapsulating structure according to claim any one of 1-8, it is characterised in that also including shell, the semiconductor swashs
Light device, which is arranged on the inside of the shell, the shell, offers launch window corresponding with the semiconductor laser.
10. encapsulating structure according to claim 9, it is characterised in that be additionally provided with the shell for connecting external
The through hole of power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710385249.2A CN106992430A (en) | 2017-05-26 | 2017-05-26 | The encapsulating structure of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710385249.2A CN106992430A (en) | 2017-05-26 | 2017-05-26 | The encapsulating structure of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106992430A true CN106992430A (en) | 2017-07-28 |
Family
ID=59421219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710385249.2A Pending CN106992430A (en) | 2017-05-26 | 2017-05-26 | The encapsulating structure of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106992430A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
| CN112615249A (en) * | 2020-12-18 | 2021-04-06 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure containing transmission grating type semiconductor laser and packaging method thereof |
| CN112636161A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Heat dissipation packaging structure with resonant cavity semiconductor laser and packaging method thereof |
| CN113300211A (en) * | 2021-06-24 | 2021-08-24 | 西安嘉合超亿光电科技有限公司 | Semiconductor laser packaging structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131010A1 (en) * | 2004-12-21 | 2006-06-22 | Chih-Ming Hsu | Heat dissipating assembly for a heat element |
| CN104078833A (en) * | 2013-03-29 | 2014-10-01 | 山东华光光电子有限公司 | High-power semiconductor laser with integrated packaging over-current protection device |
| CN104518424A (en) * | 2015-01-12 | 2015-04-15 | 赵立华 | Package structure of high-power semiconductor laser |
-
2017
- 2017-05-26 CN CN201710385249.2A patent/CN106992430A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060131010A1 (en) * | 2004-12-21 | 2006-06-22 | Chih-Ming Hsu | Heat dissipating assembly for a heat element |
| CN104078833A (en) * | 2013-03-29 | 2014-10-01 | 山东华光光电子有限公司 | High-power semiconductor laser with integrated packaging over-current protection device |
| CN104518424A (en) * | 2015-01-12 | 2015-04-15 | 赵立华 | Package structure of high-power semiconductor laser |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
| CN112615249A (en) * | 2020-12-18 | 2021-04-06 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure containing transmission grating type semiconductor laser and packaging method thereof |
| CN112636161A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Heat dissipation packaging structure with resonant cavity semiconductor laser and packaging method thereof |
| CN113300211A (en) * | 2021-06-24 | 2021-08-24 | 西安嘉合超亿光电科技有限公司 | Semiconductor laser packaging structure and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170728 |
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| RJ01 | Rejection of invention patent application after publication |