CN113410651A - Broadband high-power microwave self-adaptive protection device - Google Patents
Broadband high-power microwave self-adaptive protection device Download PDFInfo
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- CN113410651A CN113410651A CN202110687573.6A CN202110687573A CN113410651A CN 113410651 A CN113410651 A CN 113410651A CN 202110687573 A CN202110687573 A CN 202110687573A CN 113410651 A CN113410651 A CN 113410651A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention belongs to the field of strong electromagnetic field protection of space, and particularly relates to a broadband high-power microwave self-adaptive protection device. In order to solve the problems of low working frequency range and narrower bandwidth of the conventional protective device, the device comprises a switch-type super surface, two layers of band-pass frequency selection surfaces and three layers of dielectric plates; wherein, the switch-type super surface is printed on the upper surface of the upper dielectric plate; the two layers of band-pass frequency selection surfaces are printed on the upper surfaces of the middle layer and the lower layer of dielectric plate, and the structures of the two layers of band-pass frequency selection surfaces are the same; an air layer is arranged in the middle of the three dielectric plates; each unit of the switch-type super-surface is composed of two square metal rings, and the outer metal ring is connected with the adjacent unit to form a grid structure; four gaps are etched in the middle of four edges of the inner layer square ring, and PIN diodes are bridged on the four gaps; each unit structure of the band-pass frequency selection surface is formed by etching four diamond-shaped gaps on a metal sheet.
Description
Technical Field
The invention belongs to the field of strong electromagnetic field protection of space, and particularly relates to a broadband high-power microwave self-adaptive protection device.
Background
With the technology of High Power Microwave Weapons (HPMW) continuing to develop, countries around the world are actively dealing with the potential threats posed by HPMW. High Power Microwaves (HPMs) are capable of interfering with or destroying electronic devices by radiating large amounts of electromagnetic energy in the microwave spectrum. When high-energy microwave signals act on electronic equipment, if the frequency of the high-energy microwave signals is the same as the working frequency of the electronic equipment, the high-energy microwave signals enter the system through coupling and change into large current, and components are overheated or even broken down. In addition, the receiving and amplifying module of the system may further amplify the high power microwave, damaging the whole device. Therefore, the research on the protection of the electronic equipment in the high-power microwave environment is of great significance.
The technologies used for the spatial protection of HPM are generally wave absorbers and filters, and the main working principle of the wave absorbers is to absorb electromagnetic waves of a specific frequency band to reduce the power transmitted through the protection device (s.s.supermoto et al, "M-type magnetic composite as a microwave absorber with a side band width in the GHz range," IEEE trans.magn., vol.35, No.5, pp.3154-3156, sep.1999 "). The filters mainly use Frequency selective surfaces to reflect signals outside the operating band (z.l.wang, k.hashimoto, n.shinohara, and h.matsumoto, "Frequency-selective surface for microwave power transmission," IEEE trans.micro.thermal technology, vol.47, No.10, pp.2039-2042, oct.1999.). Both of these methods have some drawbacks. The loaded wave absorber needs to absorb incident wave energy so that electromagnetic waves entering the system cannot influence the system, but the material can absorb energy of working signals and influence normal work of equipment; the frequency selective surface can reflect out-of-band signals, but high-power microwaves in the working frequency band cannot be reflected, so that certain hidden danger is caused. The energy selection surface is used as an active super surface of self-adaptive protection, a protection mode can be switched on or switched off according to the intensity of the incident wave field, and the in-band electromagnetic wave can be well protected. However, the protection bandwidth is generally about 0 to 3GHz due to the influence of the size of components and parts used on the surface, the processing technology and the like, and the working frequency band is low.
The problems of narrow active super-surface guard band, low working frequency band and the like are solved. The invention provides a high-power microwave protection device with broadband high shielding efficiency.
Disclosure of Invention
The invention provides a device for cascade protection of a super surface and a band-pass frequency selection surface with switching characteristics, aiming at solving the problems of small protection bandwidth, low shielding efficiency and the like of the conventional active super surface in the aspect of high-power microwave protection.
In order to achieve the purpose, the invention adopts the following technical scheme:
a broadband high-power microwave self-adaptive protection device comprises a switch-type super surface, an upper dielectric plate, a first band-pass frequency selection surface, a middle dielectric plate, a second band-pass frequency selection surface and a lower dielectric plate which are arranged from top to bottom in sequence; the switch-type super-surface is printed on the upper surface of the upper-layer dielectric slab, the first band-pass frequency selection surface is printed on the upper surface of the middle-layer dielectric slab, the second band-pass frequency selection surface is printed on the upper surface of the lower-layer dielectric slab, an air layer is arranged among the upper-layer dielectric slab, the middle-layer dielectric slab and the lower-layer dielectric slab, and the central line of the switch-type super-surface, the central line of the upper-layer dielectric slab, the central line of the first band-pass frequency selection surface, the central line of the middle-layer dielectric slab, the central line of the second band-pass frequency selection surface and the central line of the lower-layer dielectric slab are coincided; the switch-type super surface is composed of M multiplied by M units, each unit is a first square metal patch, and an outer layer square ring and an inner layer square ring are etched on the first square metal patch; the first band-pass frequency selection surface is composed of M multiplied by M units, each unit is a second square metal patch, and four rhombic gaps are uniformly etched in the center of the second square metal patch in the axial direction; the second bandpass frequency-selective surface is the same in structure and size as the first bandpass frequency-selective surface. The scheme utilizes the broadband protection characteristic of the frequency selection surface, effectively increases the protection bandwidth, and simultaneously carries out self-adaptive protection on the passband of the frequency selection surface by introducing the switch type super surface, thereby solving the problem that the frequency selection surface can not carry out protection on the passband. The interlayer coupling effect is effectively reduced through the 'band-pass' and 'band-stop' cascade design in the multilayer cascade structure, and the protection performance is improved.
Furthermore, a square gap is etched in the center of each edge of the inner layer square ring, and a PIN diode is connected to each square gap in a crossing mode. The cross-connected PIN diode is a mode control element of the protection device, and the device can be switched in a wave-transparent mode and a protection mode in an adaptive mode according to the power intensity of an incident wave.
Further, the transmission characteristics of the high power protection device are controlled by the power of the incident signal; when low power signal is incident (field strength at guard sample)<70V/m) the diode is turned off due to the induced voltage being less than the threshold voltage. In this case, the pass bands of the switch-type super-surface and the band-pass frequency selection surface both include f1Both of them have a working frequency of f1All appear to be transmissive, so the operating frequency is f1Can be transmitted. At HPM incidence (field strength at guard sample)>1100V/m), the diode is completely conducted, and the stop band of the switch-type super surface moves to f1At a frequency of f1Is reflected by the switch-type super-surface, f1The other frequency bands are reflected by the band-pass frequency selective surface, so that the high-power microwave protection device can realize broadband protection on high-power signals.
Compared with the existing active frequency selection surface, the self-adaptive protection in the working frequency band by utilizing the switch super surface and the shielding of the out-of-band signal by the band-pass frequency selection surface not only improve the frequency of the working frequency band, but also keep the shielding efficiency on the basis of widening the protection bandwidth and improve the protection effect; the high-power microwave protection device can transmit 4.02-4.22 GHz working signals, the relative bandwidth is 9.92%, the insertion loss is lower than 2dB, meanwhile, high-power microwaves of 0-8.85 GHz can be shielded, and the shielding efficiency is greater than 20 dB.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a process for implementing the switch-type super-surface unit structure, wherein FIG. 2a illustrates an outer square ring and an inner square ring etched on a first square metal patch; FIG. 2b is a view showing four rectangular slits etched in the center of four sides of the inner square ring; FIG. 2c is a cross-over PIN diode at four etched rectangular slots;
FIG. 3 is a schematic diagram of a band-pass frequency selective surface unit structure implementation process;
FIG. 4 shows S under low power signal incident conditions according to the present invention21A schematic diagram;
FIG. 5 shows S under high power signal incident condition according to the present invention21A schematic diagram;
FIG. 6 is a schematic diagram of the transient response of the present invention at low incident field strength;
fig. 7 is a schematic diagram of the transient response of the present invention under high incident field conditions.
FIG. 8 is a graph illustrating the shielding effectiveness of the present invention at different incident field strengths;
in the figure: 1-switch-type super surface, 2-upper dielectric plate, 3-first band-pass frequency selection surface, 4-middle dielectric plate, 5-second band-pass frequency selection surface, 6-lower dielectric plate, 7-first square metal patch, 8-outer square ring, 9-inner square ring, 10-rectangular gap, 11-PIN diode, 12-second square metal patch and 13-rhombic gap.
Detailed Description
Example 1
As shown in fig. 1 to 3, the broadband high-power microwave self-adaptive protection device of the present invention includes a switch-type super-surface 1, an upper dielectric plate 2, a first band-pass frequency selection surface 3, a middle dielectric plate 4, a second band-pass frequency selection surface 5, and a lower dielectric plate 6, which are sequentially arranged from top to bottom;
the switch-type super surface 1 is printed on the upper surface of an upper-layer dielectric plate 2, the first band-pass frequency selection surface 3 is printed on the upper surface of a middle-layer dielectric plate 4, the second band-pass frequency selection surface 5 is printed on the upper surface of a lower-layer dielectric plate 6, an air layer is arranged among the upper-layer dielectric plate 2, the middle-layer dielectric plate 4 and the lower-layer dielectric plate 6, and the central line of the switch-type super surface 1, the central line of the upper-layer dielectric plate 2, the central line of the first band-pass frequency selection surface 3, the central line of the middle-layer dielectric plate 4, the central line of the second band-pass frequency selection surface 5 and the central line of the lower-layer dielectric plate 6 are coincided;
the switch type super surface 1 is composed of M multiplied by M units, each unit is a first square metal patch 7, an outer layer square ring 8 and an inner layer square ring 9 are etched on the first square metal patch 7, a square gap 10 with the width of D is etched in the center of each edge of the inner layer square ring 9, and a PIN diode 11 is connected to each square gap 10 in a crossing mode.
The first band-pass frequency selection surface 3 is composed of M × M units, each unit is a second square metal patch 12, four diamond-shaped gaps 13 with the side length S and the smallest interior angle θ are uniformly etched in the center axial direction of the second square metal patch 12, and the second band-pass frequency selection surface 3 and the first band-pass frequency selection surface 5 are identical in structure and size.
Where M is 20, D is 0.7mm, S is 6.7mm, and θ is 60 °.
The transmission characteristics of the device are controlled by the power of the incident signal; when a low-power signal is incident, the diode is cut off due to the fact that the induced voltage is smaller than the threshold voltage, and the pass bands of the switch-type super surface and the band-pass frequency selection surface both comprise f1Both of them have a working frequency of f1All appear as transmission, with an operating frequency f1Can transmit the electromagnetic wave; when HPM is incident, the diode is conducted because the induced voltage is greater than the conduction voltage, and the stop band of the switch-type super surface moves to f1At a frequency of f1Is reflected by the switch-type super-surface, f1The signals of the other frequency bands are reflected by the band-pass frequency selective surface, and the guard device realizes the width of the high-power signalsThe belt is protected.
As shown in FIG. 4, the curve represents the transmission absorption curve S of the shielding device under low power signal incidence conditions21. As can be seen from fig. 4: the active frequency selective surface resonates at 4.2GHz with an insertion loss of 1.46 dB. Operating bandwidth (| S)21|<2dB) is 4.02-4.44 GHz.
As shown in FIG. 5, the curve represents the transmission coefficient S of the shielding device at high power signal incidence21. As can be seen from fig. 5: when a high-power signal is incident, the induction voltage is greater than the threshold voltage, the diode is conducted, and the shielding effectiveness of the protection device is always greater than 20dB within a broadband range of 0-8.85 GHz.
As shown in FIG. 6, curve I shows the waveform of the incident wave of the modulated sine wave excited guard surface with an electric field strength of 10V/m, and curve II shows the waveform after transmission. As can be seen from fig. 6: when the incident wave power is low, the protective surface works in a wave-transparent mode, the waveform of a transmission signal is basically the same as that of the incident wave, and the insertion loss is 2 dB.
As shown in FIG. 7, curve I shows the incident wave waveform when the modulated sine wave with an electric field strength of 2000V/m excites the guard surface, and curve II shows the transmitted wave waveform. As can be seen from fig. 7: when the incident wave power is large, the protection surface works in a protection mode, the incident wave power is well restrained, and the shielding efficiency can reach 20 dB.
FIG. 8 is a graph showing the variation of shielding effectiveness with the intensity of an incident wave according to the present invention. As can be seen from FIG. 8, the shielding effectiveness SE varies with the incident field strength within a range of 2-20 dB. When the electric field intensity is changed within the range of 0-70V/m, the protection device is in a stable transmission state, the in-band insertion loss is 2dB, the diode on the protection device starts to be conducted along with the gradual increase of the field intensity, the shielding effectiveness SE starts to increase along with the gradual conduction of the diode, when the field intensity is increased to 1100V/m, the diode is completely conducted, the protection device is in a stable protection state, and the shielding effectiveness SE is stabilized to be more than 20 dB.
Claims (3)
1. A broadband high-power microwave self-adaptive protection device is characterized by comprising a switch-type super surface (1), an upper dielectric slab (2), a first band-pass frequency selection surface (3), a middle dielectric slab (4), a second band-pass frequency selection surface (5) and a lower dielectric slab (6) which are arranged from top to bottom in sequence;
the switch type super surface (1) is printed on the upper surface of an upper-layer dielectric plate (2), the first band-pass frequency selection surface (3) is printed on the upper surface of a middle-layer dielectric plate (4), the second band-pass frequency selection surface (5) is printed on the upper surface of a lower-layer dielectric plate (6), an air layer is arranged among the upper-layer dielectric plate (2), the middle-layer dielectric plate (4) and the lower-layer dielectric plate (6), and the central line of the switch type super surface (1), the central line of the upper-layer dielectric plate (2), the central line of the first band-pass frequency selection surface (3), the central line of the middle-layer dielectric plate (4), the central line of the second band-pass frequency selection surface (5) and the central line of the lower-layer dielectric plate (6) are coincided;
the switch type super surface (1) is composed of M multiplied by M units, each unit is a first square metal patch (7), and an outer layer square ring (8) and an inner layer square ring (9) are etched on the first square metal patch (7);
the first band-pass frequency selection surface (3) is composed of M multiplied by M units, each unit is a second square metal patch (12), and four rhombic gaps (13) are uniformly etched in the center of the second square metal patch (12) in the axial direction.
2. The broadband high-power microwave self-adaptive protection device is characterized in that a square gap (10) is etched in the center of each edge of the inner layer square ring (9), and a PIN diode (11) is connected to each square gap (10) in a crossing mode.
3. The adaptive guard for broadband high power microwaves according to claim 2, wherein the transmission characteristics of the device are controlled by the power of the incident signal; when a low-power signal is incident, the diode is cut off due to the fact that the induced voltage is smaller than the threshold voltage, and the pass bands of the switch-type super surface and the band-pass frequency selection surface both comprise f1Both of them have a working frequency of f1All appear asTransmission at a working frequency f1Can transmit the electromagnetic wave; when HPM is incident, the diode is conducted because the induced voltage is greater than the conduction voltage, and the stop band of the switch-type super surface moves to f1At a frequency of f1Is reflected by the switch-type super-surface, f1The signals of the other frequency bands are reflected by the band-pass frequency selection surface, and the protection device realizes broadband protection on high-power signals.
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Cited By (3)
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| CN115020944A (en) * | 2022-06-28 | 2022-09-06 | 中国人民解放军国防科技大学 | Wide-band waveguide high-power protection device |
| CN115458948A (en) * | 2022-11-11 | 2022-12-09 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
| CN116666924A (en) * | 2023-07-27 | 2023-08-29 | 南京邮电大学 | Three-dimensional waveguide type power selection structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020944A (en) * | 2022-06-28 | 2022-09-06 | 中国人民解放军国防科技大学 | Wide-band waveguide high-power protection device |
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| CN115458948A (en) * | 2022-11-11 | 2022-12-09 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
| CN115458948B (en) * | 2022-11-11 | 2023-01-06 | 中国人民解放军国防科技大学 | High-frequency ultra-wideband energy selection surface |
| CN116666924A (en) * | 2023-07-27 | 2023-08-29 | 南京邮电大学 | Three-dimensional waveguide type power selection structure |
| CN116666924B (en) * | 2023-07-27 | 2023-10-13 | 南京邮电大学 | Three-dimensional waveguide type power selection structure |
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