CN113131220B - Dual-frequency energy selection surface - Google Patents
Dual-frequency energy selection surface Download PDFInfo
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- CN113131220B CN113131220B CN202110409183.2A CN202110409183A CN113131220B CN 113131220 B CN113131220 B CN 113131220B CN 202110409183 A CN202110409183 A CN 202110409183A CN 113131220 B CN113131220 B CN 113131220B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0053—Selective devices used as spatial filter or angular sidelobe filter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
A double-frequency energy selection surface is a space self-adaptive energy selection surface which can work in C wave band and S wave band simultaneously, and comprises a medium substrate, wherein the upper surface of the medium substrate is printed with a surface structure which is periodically arranged, the surface structure comprises a series of metal units which are distributed in an array manner, each metal unit comprises two rectangular metal rings which are oppositely arranged in parallel and are respectively a first metal ring and a second metal ring, a certain interval is formed between the two metal rings, the interval is the interval between two adjacent long edges of the first metal ring and the second metal ring, and the first metal ring and the second metal ring have the same length and different widths; and the notches of the first metal ring and the second metal ring are respectively connected through a loading diode and a total capacitance. The invention realizes the frequency selection characteristic of incident electromagnetic wave and the energy selection characteristic of sensing electromagnetic energy.
Description
Technical Field
The invention relates to a double-frequency energy selection surface which simultaneously works in a C wave band and an S wave band and is applied to the front door self-adaptive protection of an electronic information system.
Background
With the rapid development of electronic information technology, the integration, intelligence and miniaturization degree of various electronic information devices is continuously improved, the frequency is increasingly improved, the energy consumption is increasingly reduced, the performance is greatly improved, and meanwhile, the sensibility and vulnerability of the electronic information devices to strong electromagnetic interference and strong electromagnetic attack are greatly increased. Meanwhile, besides strong electromagnetic interference existing in nature, artificial strong electromagnetic interference and attack means are mature day by day, and sensitive equipment in the military and civil fields faces more complex strong electromagnetic threat.
At present, most protection means aiming at strong electromagnetic threats mainly comprise 'back door' protection means such as filtering, shielding and grounding, and the methods are simple and convenient from the point of circuit design, but increase the complexity and the design difficulty of a system. And aiming at the situation that the front end mainly adds a high-power amplitude limiter in a front end circuit, although the high-power attenuator can greatly attenuate the current flowing into the circuit, the high-power attenuator can influence the passing of normal signals while meeting the requirement of greatly attenuating the signals. In addition, although the front-end additional filter or the Frequency Selective Surface (FSS) can isolate the out-of-band high-power signal, the self-adaptive change of the working state of the front-end additional filter or the frequency selective surface cannot be realized according to the change of the electromagnetic environment, and the strong electromagnetic pulse with the frequency in the pass band cannot be effectively protected.
Although the literature proposes the concept of an energy selection surface, which can adaptively change the working state of the energy selection surface according to the spatial field intensity to adaptively protect the in-band strong electromagnetic pulse, the working frequency of the energy selection surface is the L band, and the energy selection surface is low-pass filtering, which cannot meet the protection requirement of a high-band electronic system. Or although the protection of the S band and the C band is respectively realized, the working frequency band is only a single frequency band, and the multi-band simultaneous protection cannot be carried out.
Compared with the working frequency band, the published literature reports have not proposed an energy selection surface with the multi-band working characteristics for the time being. However, the current communication systems all have the working requirements of multiple frequency bands, so that the dual-band energy selection surface with the protection characteristic in multiple frequency bands is provided with great significance.
Disclosure of Invention
The invention provides a double-frequency energy selection surface aiming at preventing an electronic system from being threatened by strong electromagnetic pulses, which is a space self-adaptive energy selection surface working in C wave band and S wave band at the same time, and realizes the frequency selection characteristic of incident electromagnetic waves and the energy selection characteristic of sensing electromagnetic energy.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a double-frequency energy selection surface comprises a medium substrate, wherein surface structures which are periodically arranged are printed on the upper surface of the medium substrate, the surface structures comprise a series of metal units which are distributed in an array mode, the metal units comprise two rectangular metal rings which are arranged oppositely in parallel and are respectively a first metal ring and a second metal ring, a certain distance is reserved between the two metal rings, and the first metal ring and the second metal ring are the same in length and different in width; and the notches of the first metal ring and the second metal ring are respectively connected through a loading diode and a total capacitance.
As a further limitation of the present invention, the distance between the two metal rings is the distance between two adjacent long sides of the first metal ring and the second metal ring, and of the two adjacent long sides of the first metal ring and the second metal ring, the width of the metal sheet used for the long side of the first metal ring is wider than the width of the metal sheet used for the long side of the second metal ring, and there is strong electromagnetic coupling between the two. In other words, the thick long side of the first metal ring is adjacent to the narrow long side of the second metal ring.
As a further limitation of the invention, the diodes of adjacent metal units in the surface structure have a positive and negative orientation.
As a further limitation of the present invention, there is a certain difference between the capacitance value of the lumped capacitor loaded on the second metal ring and the equivalent capacitance of the diode loaded on the first metal ring.
As a further limitation of the present invention, the on/off of the loaded diode is controlled by the electromagnetic signal intensity in the first metal ring induction space, so that the working state of the whole energy selection surface is changed.
When the electromagnetic signal intensity in the space is small, the diode is in a non-conducting state, the diode is equivalent to a capacitor, the first metal ring and the second metal ring respectively generate parallel LC resonance in a C wave band and an S wave band, and electromagnetic waves can freely penetrate through the resonance point, namely two pass bands of the double-frequency energy selection surface;
when the intensity of the electromagnetic signal in the space is increased, the voltage induced at the two ends of the diode is gradually increased, so that the diode is converted from a non-conduction state to a conduction state; at this time, the first metal ring connected to the diode is in a connected state, and the resonance state is destroyed, and thus, the passband in the C band generated by the first metal ring is turned off; meanwhile, although no diode is loaded on the second metal ring, the resonance frequency point of the second metal ring moves to high frequency through the coupling effect between the first metal ring and the second metal ring, and the passband generated by the second metal ring is also closed.
As a further limitation of the present invention, the position of the resonance point is determined by the equivalent capacitance of the diode, the lumped capacitance, and the perimeter and the line width of the two metal rings, wherein the line width refers to the width of the metal sheet used by each long side and short side of the two metal rings.
As a further limitation of the present invention, a gap is opened on the long side or the short side of the two metal rings, the diode is loaded on the long side of the first metal ring, and the lumped capacitor is loaded on the long side or the short side of the second metal ring.
Compared with the prior art, the invention has the advantages that:
the invention has the dual characteristics of frequency selection and energy selection. In the frequency domain, the invention has a spatial filtering function and is represented as a double-frequency spatial filter, and a passband is respectively arranged at an S wave band and a C wave band; in the energy domain, the energy selection device shows an adaptive response.
The invention can adaptively sense the electromagnetic field intensity in space, change the working state of the device: when the electromagnetic field energy in the space is smaller than a switching threshold value, the device provides a passband for operation in an S waveband and a C waveband respectively, and signals are received by the system through an operating frequency band; when the energy is greater than the switching threshold, the operating band is off and the signal is reflected.
The invention is applied to the front door protection of the electronic system and can self-adaptively protect the electronic system from being threatened by strong electromagnetic pulses. The method has important significance for improving the battlefield viability and the anti-interference capability of weaponry in complex environments.
Drawings
FIG. 1 is a schematic structural diagram of a metal unit according to an embodiment of the present invention;
FIG. 2 is a C-band dual-frequency energy selection surface equivalent circuit model;
FIG. 3 is a transmission parameter of a dual-frequency energy selective surface in a wave-transparent and shielding state;
FIG. 4 is a schematic structural diagram of a dual-frequency energy-selective surface in an embodiment of the present invention;
reference numbers in the figures:
100. a metal unit; 101. a first metal ring; 102. a second metal ring; 200. a diode; 300. a lumped capacitance.
Detailed Description
The invention is further described below with reference to the figures and the specific embodiments of the description.
As shown in fig. 1 and 4, the dual-band energy selection surface provided in this embodiment operates in S-band and C-band, and can adaptively change its own operating state by spatial field intensity, and adaptively shield strong electromagnetic pulses while not affecting normal operating signals, thereby protecting the safety of electronic devices. The double-frequency energy selection surface comprises a dielectric substrate, wherein surface structures which are arranged periodically are printed on the upper surface of the dielectric substrate, the surface structures comprise a series of metal units 100 which are distributed in an array mode, the metal units 100 comprise two rectangular metal rings which are arranged oppositely in parallel and are respectively a first metal ring 101 and a second metal ring 102, a certain interval is formed between the first metal ring 101 and the second metal ring 102, the interval is the interval between two adjacent long sides of the first metal ring 101 and the second metal ring 102, the first metal ring 101 and the second metal ring 102 are the same in length and different in width, and the first metal ring 101 and the second metal ring 102 have different circumferences. A notch is respectively arranged on the first metal ring 101 and the second metal ring 102 to disconnect the two metal rings, and the notches of the first metal ring 101 and the second metal ring 102 are respectively connected through the loading diode 200 and the total capacitance 300.
In the present embodiment, the diode 200 is a PIN diode, which is BAp-51-02 from Enzhipu. In practical applications, other semiconductor diodes with switching characteristics may be used as the diode.
In this embodiment, the dielectric substrate is F4B, the dielectric constant is 2.2, and the thickness is 0.5088 mm.
In this embodiment, the circumference of the first metal ring 101 is 19.75mm, and the circumference of the second metal ring 102 is 20 mm.
The distance between the two metal rings is the distance between two adjacent long sides of the first metal ring 101 and the second metal ring 102. Of the two adjacent long sides of the first metal ring 101 and the second metal ring 102, the width of the metal sheet used for the long side of the first metal ring 101 is wider than the width of the metal sheet used for the long side of the second metal ring 102, and strong electromagnetic coupling exists between the two. In other words, the thick long side in the first metal ring 101 and the narrow long side of the second metal ring 102 are adjacent as shown in fig. 1. In this embodiment, the diode 200 is loaded on the thick long side of the first metal ring 101, the lumped capacitor 300 is loaded on the thick long side of the first metal ring 102, and the sides of the first metal ring 101 and the second metal ring 102 on which no diode is loaded and the lumped capacitor are all narrow sides, that is, the width of the metal sheet used for the narrow sides is smaller than that of the metal sheet used for the thick long sides. In this embodiment, detailed parameter values of other structures are given in table 1, where the metal unit is square, P represents a side length of the metal unit, w1 represents a line width of a side on which the diode is loaded on the first metal ring 101, w2 represents a line width of a side on which the lumped capacitor is loaded on the second metal ring 102, distances of notches in the first metal ring 101 and the second metal ring 102 are both g, and line widths of sides of the lumped capacitor, on which no diode is loaded, in the first metal ring 101 and the second metal ring 102 are both equal to each other and are both S.
TABLE 1 (Unit: mm)
In the invention, the positive and negative directions of the diodes of the adjacent metal units in the surface structure are consistent. The capacitance value of the lumped capacitor loaded on the second metal ring and the equivalent capacitance of the diode loaded on the first metal ring have certain difference.
The invention can effectively protect the incident strong electromagnetic pulse with the polarization same as the placing direction of the diode.
The invention realizes the self-adaptive protection of strong electromagnetic waves by utilizing the switching characteristic of the diode to radio frequency signals. When the diode is not conducted, the diode is equivalent to a resistor (less than 10 ohms) with a small resistance value, and the resistor is short-circuited for radio frequency signals. When the diode is not conducting, it can be equivalent to a capacitor, the value of which is about picofarad, and which is open-circuited for radio frequency signals.
According to the invention, the on-off of the loaded diode is controlled by the strength of the electromagnetic signal in the first metal ring induction space, so that the working state of the whole energy selection surface is changed.
When the intensity of electromagnetic signals in the space is small, the diode is in a non-conducting state, the diode is equivalent to a capacitor, the first metal ring and the second metal ring respectively generate parallel LC resonance in a C wave band and an S wave band, and electromagnetic waves can freely penetrate through the resonance point, namely the two pass bands of the double-frequency energy selection surface. The position of the resonance point is determined by the equivalent capacitance value of the diode, the perimeter and the line width of the two metal rings, wherein the line width refers to the width of the metal sheet adopted by each long side and each short side of the two metal rings.
When the intensity of the electromagnetic signal in the space is increased, the voltage induced at the two ends of the diode is gradually increased, so that the diode is converted from a non-conduction state to a conduction state; at this time, the first metal ring connected to the diode is in a connected state, and the resonance state is broken, and thus, the pass band in the C band generated by the first metal ring is turned off; meanwhile, although no diode is loaded on the second metal ring, the resonance frequency point of the second metal ring is moved from low frequency to high frequency through the coupling effect between the first metal ring and the second metal ring, and the passband generated by the second metal ring is also closed. Therefore, the invention respectively utilizes the two metal rings to generate dual-frequency working frequency bands, and realizes the function of simultaneously opening/closing dual frequencies through the on-off of a diode and the coupling action between the two metal rings.
The equivalent circuit model corresponding to the above working principle is shown in fig. 2. Wherein Cs represents a loaded lumped capacitance, Ls1 and Ls2 represent inductances generated by the first metal ring 101 and the second metal ring 102, respectively, and Cd and Rdiode represent an equivalent capacitance and an equivalent resistance of the diode in an off state and an on state, respectively. When the parallel resonator is in a working state, Cs and Ls2 form a parallel resonator to generate a passband of an S wave band, and Cd and Ls1 form a parallel resonator to generate a passband of a C wave band. The electronic information system can work normally; when the filter is in a shielding state, the Rdiode and the Ls1 do not form a resonator, the passband of the C waveband is damaged, the passband of the S waveband is shifted, and the original working frequency band is also in a shielding state.
Further, the distance between the first metal ring 101 and the second metal ring 102 can be adjusted, the first metal ring 101 and the second metal ring 102 are electromagnetically coupled, and the resonance point of the second metal ring 102 can be controlled by the coupling of the first metal ring 101.
The invention realizes the double-frequency energy selection surface working in the C wave band and the S wave band, and the designed double-frequency energy selection surface realizes that the insertion loss of the double working frequency bands is less than 1dB, and the shielding effect on strong electromagnetic pulses exceeds 15 dB. The designed dual-frequency energy selection surface realizes the effect of controlling the on-off of the two frequency band pass bands by using a single diode. The structure of the invention has the general characteristic, the structure parameters are changed, and the working frequency band can be moved to other frequency bands. The thickness and dielectric constant of the dielectric substrate can be appropriately adjusted. The shapes, line widths, circumferences and other dimensions of the two metal rings can be applied to other frequency bands through scaling. The positions of the lumped capacitor and the diode loaded on the metal ring are not fixed, and the functional characteristics of the invention are not influenced by adjusting the positions.
The transmission parameters of the C-band and S-band dual-band energy selection surfaces in the shielding state and the operating state are shown in fig. 3. Wherein the dashed line represents the active state and the solid line represents the shield state. It can be seen that, under the working state and the shielding state, the difference of the transmission curves is at least more than 10dB, and the strength of the transmission signal can be effectively controlled. When the energy protection surface is in a working state, a signal passband covering a C waveband and an S waveband is arranged, the transmission coefficient is larger than 1dB, and electromagnetic signals can normally penetrate through the signal passband. When the energy selection surface is in a wave-transparent shielding state, the signal passband is closed, the transmission coefficient is less than 10dB, the electromagnetic wave is reflected, and the electronic information system is effectively protected.
The invention relates to a protection device for linearly polarized electromagnetic waves, which can protect the electromagnetic waves with working polarization without influencing the electromagnetic waves with vertical polarization. When the incident wave electric field energy is small, the diode is in a zero-bias state, the double-frequency space filter has a double-frequency space filter function, and the in-band insertion loss is less than 1 dB. When the energy of the external signal exceeds a design threshold, the diode is in a forward bias state, the two signal pass bands are simultaneously closed, and strong electromagnetic pulses are shielded, so that electronic equipment is protected. Compared with other existing patents, the dual-band energy selection protection device has the advantages that the dual-band energy selection protection characteristic is realized for the first time, and key indexes such as insertion loss, protection effect, processing complexity and the like are excellent.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (8)
1. A dual-frequency energy selection surface is characterized by comprising a dielectric substrate, wherein surface structures which are arranged periodically are printed on the upper surface of the dielectric substrate, the surface structures comprise a series of metal units which are distributed in an array mode, each metal unit comprises two rectangular metal rings which are arranged oppositely in parallel and are respectively a first metal ring and a second metal ring, a certain distance is reserved between the two metal rings, the distance between the two metal rings is the distance between two adjacent long sides of the first metal ring and the second metal ring, the width of a metal sheet adopted by the long side of the first metal ring is wider than that of a metal sheet adopted by the long side of the second metal ring in the two adjacent long sides of the first metal ring and the second metal ring, and magnetic coupling exists between the two metal rings; the first metal ring and the second metal ring have the same length and different widths; the first metal ring and the second metal ring are respectively provided with a notch, the two metal rings are respectively disconnected, the long edge of the first metal ring is provided with the notch, the diode is loaded on the long edge of the first metal ring, the long edge or the short edge of the second metal ring is provided with the notch, and the lumped capacitor is loaded on the long edge or the short edge of the second metal ring.
2. The dual-frequency energy selective surface of claim 1, wherein the diode is BAp-51-02 from enzimap corporation.
3. The dual-frequency energy selective surface of claim 1, wherein the dielectric substrate is F4B, has a dielectric constant of 2.2 and a thickness of 0.5088 mm.
4. A dual-frequency energy selecting surface according to any one of claims 1 to 3, wherein the diodes of adjacent metal elements in the surface structure have the same positive and negative directions.
5. The dual-frequency energy selective surface of claim 4, wherein a difference exists between a capacitance of the lumped capacitor loaded on the second metal ring and an equivalent capacitance of the diode loaded on the first metal ring.
6. The dual-band energy selective surface of claim 1, 2, 3 or 5, wherein the on/off of the loaded diode is controlled by the electromagnetic signal intensity in the first metal ring induction space, so that the working state of the whole energy selective surface is changed.
7. The dual-frequency energy selective surface of claim 6, wherein when the electromagnetic signal intensity in the space is small, the diode is in a non-conducting state, the diode is equivalent to a capacitor, the first metal ring and the second metal ring respectively generate a parallel LC resonance in the C-band and the S-band, and at the resonance point, the electromagnetic wave can freely penetrate through the capacitor, that is, the two pass bands of the dual-frequency energy selective surface;
when the intensity of the electromagnetic signal in the space is increased, the voltage induced at the two ends of the diode is gradually increased, so that the diode is converted from a non-conduction state to a conduction state; at this time, the first metal ring connected to the diode is in a connected state, and the resonance state is broken, and thus, the pass band in the C band generated by the first metal ring is turned off; meanwhile, although no diode is loaded on the second metal ring, the resonance frequency point of the second metal ring moves to high frequency through the coupling effect between the first metal ring and the second metal ring, and the passband generated by the second metal ring is also closed.
8. The dual-band energy-selective surface of claim 7, wherein the location of the resonance point is determined by the equivalent capacitance of the diode, the lumped capacitance, and the perimeter and the line width of the two metal rings, wherein the line width is the width of the metal sheet used for each long side and short side of the two metal rings.
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