CN110783712A - Ultra-wideband strong electromagnetic field protection device - Google Patents
Ultra-wideband strong electromagnetic field protection device Download PDFInfo
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- CN110783712A CN110783712A CN201911027289.5A CN201911027289A CN110783712A CN 110783712 A CN110783712 A CN 110783712A CN 201911027289 A CN201911027289 A CN 201911027289A CN 110783712 A CN110783712 A CN 110783712A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0086—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single discontinuous metallic layer on an electrically insulating supporting structure, e.g. metal grid, perforated metal foil, film, aggregated flakes, sintering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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Abstract
An ultra-wide band strong electromagnetic field protection device relates to the field of space strong electromagnetic field protection, and comprises an active frequency selection surface, two layers of dielectric substrates and a band-pass frequency selection surface; the active frequency selection surface is printed on the upper surface of the upper-layer dielectric substrate; the band-pass frequency selection surface is printed on the lower surface of the lower-layer dielectric substrate; an air layer is arranged between the two dielectric substrates; the unit structure of the active frequency selection surface is a metal patch etched with a square annular gap and four arc-shaped gaps, four edges of the square annular gap are connected with switching diodes in a spanning mode, and three rectangular patches which are arranged at equal intervals are loaded on the arc-shaped gaps; the unit structure of the band-pass frequency selective surface is similar to that of the active frequency selective surface except that the dimensions of the square annular gap and the circular arc gap are different from those of the latter. The invention solves the problem of high-power signal leakage caused by limited protection bandwidth of the conventional protection device.
Description
Technical Field
The invention is used for the field of space strong electromagnetic field protection, and particularly relates to an ultra-wideband strong electromagnetic field protection device.
Background
As High Power Microwave Weapons (HPMW) technology has matured, the strong electromagnetic pulses generated by the HPMW may couple through an antenna into electronic systems such as radar, communications, etc., causing irreversible damage to the electronics. Therefore, the research on the protection strategy of the electronic equipment under the condition of a strong field has very important significance.
In general, there are two main measures for spatial protection of High Power Microwaves (HPM), the first is an active frequency selective surface, which is composed of a frequency selective surface, a semiconductor device having a switching characteristic, and a bias circuit. By controlling the on and off of the semiconductor device, the active frequency selective surface can realize the compatibility of receiving and sending working signals and in-band HPM protection (S. Monni et al., "Limiting frequency selective surface," in Proc. Eur. micro. Conf., Oct. 2009, pp. 606-609.). But high-power microwaves in certain specific frequency bands outside the passband can still pass through the active frequency selective surface, so that the radio frequency front end sensitive module is damaged. The second is an Energy Selective Surface (ESS), which is typically composed of a metal grid and a semiconductor device. The ESS can adaptively perform HPM protection according to the magnitude of incident wave power value (C.Yang et al, 'A novel method of energy selective surface for adaptive HPM/EMPprotection', IEEE antenna Wireless processing, Lett., vol. 12, pp. 112, 115, 2013). However, due to the limitation of processing precision, the protection range of the energy selection surface is generally 0-3GHz at present, and the protection performance on high-frequency HPM is limited.
In view of the problems that the active frequency selective surface can only protect the in-band HPM and the energy selective surface has no protection effect on the high frequency HPM signal. The invention provides a protection device with ultra-wide band strong field protection capability.
Disclosure of Invention
The invention provides a protection device for realizing ultra wide band high field protection by adopting a method of cascading a band-pass frequency selection surface and an active frequency selection surface, aiming at solving the problem of HPM leakage caused by limited protection bandwidth of the active frequency selection surface and the energy selection surface at present.
The invention is realized by adopting the following technical scheme:
an ultra-wideband strong electromagnetic field protection device sequentially comprises an active frequency selection surface, an upper dielectric substrate, a lower dielectric substrate and a band-pass frequency selection surface from top to bottom;
the active frequency selective surface is printed on the upper surface of the upper dielectric substrate; the band-pass frequency selection surface is printed on the lower surface of the lower-layer dielectric substrate; an air layer is arranged between the upper dielectric substrate and the lower dielectric substrate; the axis of the active frequency selection surface, the axis of the upper layer dielectric substrate, the axis of the lower layer dielectric substrate and the axis of the band-pass frequency selection surface are coincided;
the active frequency selection surface is composed of M multiplied by M units, each unit is a square metal patch, square annular gaps are etched on the square metal patches, and PIN diodes are connected to four gaps of the square annular gaps in a crossing mode; an arc-shaped gap with the radius of R is etched on the internal patch surrounded by the square annular gap, and three rectangular patches which are arranged at equal intervals are loaded on the arc-shaped gap;
the band-pass frequency selection surface is composed of M multiplied by M units, each unit is a square metal patch, and a square annular gap is etched on each square metal patch; an arc-shaped gap with the radius of S is etched on the internal patch surrounded by the square annular gap, and three rectangular patches which are arranged at equal intervals are loaded on the arc-shaped gap;
the transmission characteristic of the high-field protection device is controlled by the power of an incident signal; when low power signal is incident (power density at guard sample)<17W/m
2) Since the induced voltage is less than the threshold voltage, the diode is turned off. At this time, the resonance frequencies of both the active frequency selective surface and the band-pass frequency selective surface
f 1Both for an operating frequency of
f 1All appear to be transmissive, so the operating frequency is
f 1Can be transmitted. At HPM incidence (power density at guard sample)>17W/m
2) Since the induced voltage is greater than the turn-on voltage, the diode turns on and the resonant frequency of the active frequency selective surface shifts to
f 2When the division frequency is
f 2The outer HPMs are all reflected by the active frequency selective surface, only at a frequency of
f 2Can continue transmission through the active frequency selective surface, and the resonant frequency is
f 1The band-pass frequency selective surface has a frequency of
f 2The HPM signal shows strong reflection, so that the strong field protection device can realize ultra-wide band protection on high-power signals.
Ultra-wideband in the present invention means that the relative bandwidth exceeds 100%. High power microwave refers to a microwave signal generated by a pulsed weapon.
Compared with the existing active frequency selection surface, the method of the invention not only broadens the working bandwidth of the active frequency selection surface, but also realizes the full-band protection of the HPM outside the in-band by using the method of cascading the band-pass frequency selection surface and the active frequency selection surface, obviously improves the peak leakage problem and improves the protection effect; meanwhile, the arc-shaped gap is etched on the central patch of the square annular gap unit, so that the adjustability of the resonant frequency of the unit structure is increased; the realized high-field protection device can transmit normal communication signals of 3.28-3.92GHz in a pass band, the relative bandwidth reaches 17.78%, the insertion loss is lower than 0.72dB, high-power microwaves of 0-20GHz are prevented from entering a system, and the shielding effectiveness is greater than 13 dB.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic diagram of an implementation process of an active frequency selective surface unit structure.
Wherein, a is a square annular gap etched on the square metal patch 5; b is that a circular arc-shaped gap 9 with the radius of R is etched on the inner patch 8 surrounded by the square annular gap; c, three rectangular patches 10 which are arranged at equal intervals are loaded on the circular arc-shaped gap 9; d, PIN diodes are bridged on the four gaps of the square annular gap;
fig. 3 is a schematic diagram of a band-pass frequency selective surface unit structure implementation process.
In the figure, e is a square annular gap 12 etched on a square metal patch 11; f is an arc-shaped gap 14 with the radius of R etched on the inner patch 13 surrounded by the square annular gap; g is three rectangular patches 15 which are arranged at equal intervals are loaded on the arc-shaped gap 9;
FIG. 4 shows S under low power signal incident conditions according to the present invention
21Schematic representation.
FIG. 5 shows S under high power signal incident condition according to the present invention
21Schematic representation.
Fig. 6 is a schematic diagram of the transient response of the present invention under low power signal incidence conditions.
Fig. 7 is a schematic diagram of the transient response of the present invention under high power signal incident conditions.
FIG. 8 is a graph of the transmission field strength of the present invention at different incident field strengths.
Fig. 9 is a graph showing the shielding effectiveness of the present invention at different incident field strengths.
In the figure: 1-active frequency selection surface, 2-upper dielectric substrate, 3-lower dielectric substrate, 4-band-pass frequency selection surface, 5-square metal patch, 6-square annular gap, 7-PIN diode, 8-internal patch, 9-arc gap, 10-rectangular patch, 11-square metal patch, 12-square annular gap, 13-internal patch, 14-arc gap, and 15-rectangular patch.
Detailed Description
A device capable of realizing strong electromagnetic field protection in an ultra-wide band comprises an active frequency selection surface 1, an upper dielectric substrate 2, a lower dielectric substrate 3 and a band-pass frequency selection surface 4;
the active frequency selective surface 1 is printed on the upper surface of an upper-layer dielectric substrate 2; the band-pass frequency selection surface 4 is printed on the lower surface of the lower-layer dielectric substrate 3; an air layer is arranged between the upper dielectric substrate 2 and the lower dielectric substrate 3; the axis of the active frequency selection surface 1, the axis of the upper dielectric substrate 2, the axis of the lower dielectric substrate 3 and the axis of the band-pass frequency selection surface 4 are coincident;
the active frequency selection surface 1 is composed of M multiplied by M units, each unit is a square metal patch 5, square annular gaps 6 are etched on the square metal patches 5, and PIN diodes 7 are connected to four gaps of the square annular gaps 6 in a crossing mode; an arc-shaped gap 9 with the radius of R is etched on an inner patch 8 surrounded by the square annular gap 6, and three rectangular patches 10 which are arranged at equal intervals are loaded on the arc-shaped gap 9;
the band-pass frequency selection surface 4 is composed of M × M units, each unit is a square metal patch 11, and a square annular gap 12 is etched on each square metal patch 11; an arc-shaped slot 14 with the radius of S is etched on an inner patch 13 surrounded by the square annular slot 12, and three rectangular patches 15 which are arranged at equal intervals are loaded on the arc-shaped slot 14;
in specific implementation, M =20, R =8.15mm, and S =9.4 mm.
As shown in FIG. 4, curve I represents the transmission coefficient S of an active frequency selective surface at low power signal incidence
21Curve II shows the transmission coefficient S of the guard at low power signal incidence
21. As can be seen from fig. 4: the active frequency selective surface resonates at 3.46GHz with an insertion loss of 0.33 dB. Operating bandwidth (| S)
11|<-10 dB) is 3.3-3.65 GHz. Furthermore, the active frequency selective surface also generates high order resonances at 10.37GHz and 15.56 GHz. After the band-pass frequency selection surface is introduced, the electromagnetic protection device is changed into a double-layer structure, so that the working frequency band is widened (3.28 GHz-3.92 GHz), the relative bandwidth reaches 17.78%, and the insertion loss is increased to 0.72 dB.
As shown in FIG. 5, curve I represents the transmission coefficient S of the active frequency selective surface under high power signal incidence conditions
21Curve II represents the transmission coefficient S of the protection device at high power signal incidence
21. As can be seen from fig. 5: when a high-power signal is incident, the induction voltage is larger than the threshold voltage, the diode is conducted, the resonance point of the active frequency selection surface is shifted to the right, the shielding effectiveness in the pass band is increased to 17dB, and the active frequency selection surface loses the protection effect on the HPM with the frequency of 7.76 GHz. After the ideal band-pass frequency selection surface is increased, the transmission loss at 7.76GHz is increased by 12.5dB, and finally, the shielding effectiveness of the protective device is beyond 0-20GHzAnd is always greater than 13dB in the broadband range.
As shown in FIG. 6, curve I shows the transient response when the modulated sinusoidal plane wave with the electric field intensity of 10V/m excites the active frequency selective surface, and curve II shows the transient response when the modulated sinusoidal plane wave with the electric field intensity of 10V/m excites the guard. As can be seen from fig. 6: the active frequency selective surface and the guard are both operated in a transmission state, and the waveform of the transmitted signal is substantially the same as the incident signal. The maximum field intensity of the transmission signal of the active frequency selection surface is 8.4V/m, the maximum field intensity of the transmission signal of the protection device is 8.3V/m, the insertion loss is increased by about 0.1dB compared with the active frequency selection surface, and the influence on the transmission of a normal working signal is basically negligible.
As shown in FIG. 7, curve I shows the transient response when the modulated sinusoidal plane wave with an electric field strength of 2000V/m excites the active frequency selective surface, and curve II shows the transient response when the modulated sinusoidal plane wave with an electric field strength of 2000V/m excites the guard. As can be seen from fig. 6: the active frequency selective surface and the guard device both operate in a guard state, and the waveform of the transmitted signal is significantly distorted compared to the waveform of the incident signal. The maximum field intensity of the transmission signal of the active frequency selection surface is 797V/m, and the maximum field intensity of the transmission signal of the protection device is 315V/m. The invention obviously reduces peak leakage and improves the protection capability to HPM.
FIG. 8 is a diagram of the transmission field strength under different incident field strength conditions according to the present invention. As can be seen from FIG. 8, when the incident field strength is gradually increased from 0V/m to 80V/m, the transmission field strength increases linearly with the incident field strength. As the field strength continues to increase, the diode begins to conduct gradually, and the transmission field strength exhibits a non-linear change with the incident field strength.
FIG. 9 is a graph showing the variation of shielding effectiveness with the intensity of an incident wave according to the present invention. It can be seen from fig. 9 that the shielding effectiveness SE varies in the range of 2-20dB with the incident field strength. When the electric field intensity is changed within the range of 0-80V/m, the protective device is in a stable transmission state, the in-band insertion loss is 2dB, the diode on the protective device is partially conducted along with the gradual increase of the field intensity, the shielding effectiveness SE is linearly increased along with the field intensity E, when the field intensity is increased to 600V/m, the diodes are all conducted, the protective device is in a stable protection state, the shielding effectiveness SE is stabilized above 17dB, and obvious fluctuation exists along with the increase of the field intensity. In fig. 9, two distinct points of inflection can be seen, one is the incident field strength E =80V/m, when the diode has just started conducting. Secondly, the incident field intensity E =600V/m, and the diode is fully conducted at the moment.
Claims (2)
1. An ultra-wide band strong electromagnetic field protection device is characterized in that: the device comprises an active frequency selection surface (1), an upper dielectric substrate (2), a lower dielectric substrate (3) and a band-pass frequency selection surface (4);
the active frequency selective surface (1) is printed on the upper surface of the upper-layer dielectric substrate (2); the band-pass frequency selection surface (4) is printed on the lower surface of the lower-layer dielectric substrate (3); an air layer is arranged between the upper dielectric substrate (2) and the lower dielectric substrate (3); the axis of the active frequency selection surface (1), the axis of the upper dielectric substrate (2), the axis of the lower dielectric substrate (3) and the axis of the band-pass frequency selection surface (4) are coincident;
the active frequency selection surface (1) is composed of M multiplied by M units, each unit is a square metal patch (5), square annular gaps (6) are etched on the square metal patches (5), and PIN diodes (7) are connected on four gaps of the square annular gaps (6) in a crossing mode; an arc-shaped gap (9) with the radius of R is etched on an inner patch (8) surrounded by the square annular gap (6), and three rectangular patches (10) which are arranged at equal intervals are loaded on the arc-shaped gap (9);
the band-pass frequency selection surface (4) is composed of M multiplied by M units, each unit is a square metal patch (11), and a square annular gap (12) is etched on each square metal patch (11); an arc-shaped slit (14) with the radius of S is etched on an inner patch (13) surrounded by the square annular slit (12), and three rectangular patches (15) which are arranged at equal intervals are loaded on the arc-shaped slit (14).
2. Ultra-wide band strong currentMethod for protection against magnetic fields, a method for protection against high electromagnetic fields in ultra-wide bands, characterized by the fact that the power density at the location of the protection device according to claim 1 is such that, when low-power signals are incident<17W/m
2The induced voltage is less than the threshold voltage, the diode is cut off, and the resonant frequencies of the active frequency selective surface and the band-pass frequency selective surface are all
f 1The active frequency selective surface and the band-pass frequency selective surface have the same frequency as the operating frequency
f 1All signals of (2) are represented as transmission signals and the working frequency is
f 1Can transmit the electromagnetic wave; power density when incident on a guard according to claim 1>17W/m
2When the induced voltage is greater than the conduction voltage, the diode is conducted, and the resonant frequency of the active frequency selective surface is shifted to
f 2When the division frequency is
f 2The external high-power microwaves are reflected by the active frequency selective surface, and only the frequency is
f 2The high power microwave can be transmitted continuously through the active frequency selective surface, and the resonant frequency is
f 1The band-pass frequency selective surface has a frequency of
f 2The high-power microwave signal shows strong reflection, and ultra-wideband protection of the high-power signal is realized.
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| CN112596010A (en) * | 2020-11-26 | 2021-04-02 | 中国航空工业集团公司沈阳飞机设计研究所 | Energy selection surface electromagnetic performance test device and method thereof |
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