CN107634347A - Band resistance frequency-selective surfaces structure - Google Patents
Band resistance frequency-selective surfaces structure Download PDFInfo
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- CN107634347A CN107634347A CN201710687259.1A CN201710687259A CN107634347A CN 107634347 A CN107634347 A CN 107634347A CN 201710687259 A CN201710687259 A CN 201710687259A CN 107634347 A CN107634347 A CN 107634347A
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Abstract
The present invention provides a kind of band resistance frequency-selective surfaces structure, including dielectric-slab, the metal patch and graphene paster that are arranged on dielectric-slab upper surface, wherein：The metal patch includes annulus paster and the cross-shaped patch that is arranged in annulus, and the inner circle of two sides of the cross-shaped patch with annulus paster is connected；Four arc shaped slits of setting on the annulus paster, each arc shaped slits one graphene paster of interior setting, each graphene paster are seamless applying in an arc shaped slits.The present invention can realize the performance of frequency-adjustable with resistance frequency-selective surfaces structure.
Description
Technical field
The present invention relates to communication technical field, more particularly to a kind of band resistance frequency-selective surfaces structure.
Background technology
Metal patch unit that frequency-selective surfaces (FSS) are made up of a large amount of passive resonance units or in metal screen last week
The aperture unit of phase property arrangement is formed.Total reflection (patch-type) or full biography can be presented in this surface near unit resonance frequency
Defeated characteristic (aperture type).Usually it is referred to as " spatial filter " by industry personnel.However, existing passive frequencies selection surface texture
Frequency-adjustable and the performance with resistance can not be realized, can not meet the needs of multiband/broadband in existing communication system.
The content of the invention
It is an object of the invention to provide a kind of band resistance frequency-selective surfaces structure, it is intended to solve it is of the prior art can not
Realize frequency-adjustable and the technical problem with resistance.
To achieve the above object, the invention provides a kind of band resistance frequency-selective surfaces structure, including dielectric-slab, it is arranged on
The metal patch and graphene paster of dielectric-slab upper surface, wherein：
The metal patch includes annulus paster and the cross-shaped patch that is arranged in annulus, and the two of the cross-shaped patch
Inner circle of the bar side with annulus paster is connected；And
Four arc shaped slits are set on the annulus paster, a graphene paster, Mei Geshi are set in each arc shaped slits
Black alkene paster is seamless applying in an arc shaped slits.
Preferably, the radian of each arc shaped slits is identical and the spacing distance of two neighboring arc shaped slits and interval angles are equal
It is identical.
Preferably, the thickness all same of the metal patch and the graphene paster.
Preferably, the center of circle for the border circular areas that the joining on two sides in the gap is surrounded with the graphene paster
Overlap.
Preferably, annulus paster is divided into four 90 degree of circular arc by the cross-shaped patch, in each 90 degree of circular arc
Centre position sets the arc shaped slits that a radian is less than 90 degree, and the graphene patch of an arc is set in each arc shaped slits
Piece.
Preferably, the radian of the arc shaped slits and graphene paster is 23 degree.
Preferably, the dielectric-slab is the square dielectric-slab of clear glass.
Preferably, the length of the dielectric-slab and broadband be 52.5 microns, the thickness of the dielectric-slab be 1 micron, institute
It is 52.5 microns to state the length of metal patch and width, the length of each edge in the criss-cross gap is 39 microns,
Width is 3 microns, and the width of the annulus of the graphene paster is 3 microns.
8th, band resistance frequency-selective surfaces structure according to claim 1, it is characterised in that the graphene paster
The voltage that chemical potential adjustment section is applied is 0 electron-volt to 1 electron-volt.
Compared to prior art, band resistance frequency-selective surfaces structure of the present invention can realize the frequency in communication system
Adjustable and band-stop response.
Brief description of the drawings
Fig. 1 is structural representation of the present invention with resistance frequency-selective surfaces structure preferred embodiment.
Fig. 2 is the S parameter of reflectance factor when the present invention is emulated with resistance frequency-selective surfaces structure by electromagnetic simulation software
Result schematic diagram.
Fig. 3 is the S parameter of transmission coefficient when the present invention is emulated with resistance frequency-selective surfaces structure by electromagnetic simulation software
Result schematic diagram.
Embodiment
With reference to specific embodiment, the present invention is described in further detail, and following examples are the solutions to the present invention
Release, the invention is not limited in following examples.
With reference to shown in figure 1, Fig. 1 is structural representation of the present invention with resistance frequency-selective surfaces structure preferred embodiment.
In the present embodiment, the band resistance frequency-selective surfaces structure 1 includes dielectric-slab 30, is arranged on the upper table of dielectric-slab 30
The metal patch 20 and graphene paster 40 in face.
The metal patch 20 includes annulus paster 201 and the cross-shaped patch 200 being arranged in annulus 201, wherein, ten
The center of circle for the border circular areas that the joining on two sides of font paster 200 is surrounded with the annulus paster 201 overlaps, and cross
Inner circle of two sides of shape paster 200 also with annulus paster 201 is connected.
Further, annulus paster 201 is also upper sets four arc shaped slits (not shown)s, the arc of each arc shaped slits
Spend identical, and the spacing distance of two neighboring arc shaped slits and interval angles all same.A graphite is set in each arc shaped slits
Alkene paster 40 (i.e. the circular arc sector of four black regions in Fig. 1), wherein, each graphene paster 40 is seamless applying in an arc
In shape gap.Specifically, annulus paster 201 is divided into four 90 degree of circular arc by the cross-shaped patch 200, each 90
The circular arc centre position of degree sets the arc shaped slits that a radian is less than 90 degree, and the stone of an arc is set in each arc shaped slits
Black alkene paster 40.
The thickness all same of the metal patch 20 and the graphene paster 40 (for example, 0.4 nanometer).
The length and width all same of the dielectric-slab 30.The dielectric-slab 30 is the square dielectric-slab of clear glass,
In the present embodiment, the length of the dielectric-slab 30 and broadband are 52.5 microns (μm), and the thickness of the dielectric-slab 30 is micro- for 1
Rice, the dielectric constant of the dielectric-slab 30 is 3.8.The width of circular arc paster 201 is 3 microns in the metal patch 20, described
The width of each edge of cross-shaped patch 200 is 3 microns in metal patch 20, and the length of each edge is 39 microns, the graphite
The radian of alkene paster 40 is 23 degree.The overall structure of the metal patch 20, dielectric-slab 30 and graphene paster 40 forms one
Resonator.
The embodiment of the present invention has used the electrooptic effect that graphene is excellent, when regulation institute due to using graphene paster 40
When stating with the chemical potential of graphene paster 40 in frequency-selective surfaces structure 1 is hindered, the band resistance frequency-selective surfaces knot can be made
The working frequency of structure 1 changes.And in operating frequency range, the loss of the band resistance frequency-selective surfaces structure 1 is very low.
In particular frequency range, the loss of the band resistance frequency-selective surfaces structure 1 rapidly increases.Finally realizing one has band
The spatial filter of resistive energy.Due in simulation process, service life border, so with resistance frequency-selective surfaces structure 1
A frequency-selective surfaces with infinite period can be equivalent to.
The band resistance frequency-selective surfaces structure 1 is single layer structure, wherein, the band resistance frequency-selective surfaces structure 1
Upper surface is metal-graphite alkene mixed form.When band resistance frequency-selective surfaces structure 1 is connected with other communicators,
It is lost in Regulate signal transmitting procedure by adjusting the chemical potential of graphene paster 40, specifically, is pasted when assigning graphene
When the chemical potential of piece 40 changes, the electrical conductivity of graphene paster 40 also changes, and is transmitted by the change of electrical conductivity come Regulate signal
During be lost, and then influence the lower limiting frequency of microstrip line, the construction unit of this patent can be equivalent to one have it is unlimited
The frequency-selective surfaces in cycle.
Band resistance frequency-selective surfaces structure 1 of the present invention on metal patch 20 by setting a graphene paster
40, by adding different chemical potentials on graphene paster 40, by applying different voltage on the graphene paster 40
(for example, in the top of graphene paster 20 every empty and abreast set a device that can produce electric field, caused by the device
Electric field radiation is on graphene paster 20 so that applies voltage on graphene paster 20) can realize to paste the graphene
Piece 40 assigns different chemical potential (representing chemical potential with electron-volt).
Fig. 2 is the S parameter of reflectance factor when the present invention is emulated with resistance frequency-selective surfaces structure by electromagnetic simulation software
Result schematic diagram；Fig. 3 is the S ginsengs of transmission coefficient when the present invention is emulated with resistance frequency-selective surfaces structure by electromagnetic simulation software
Number result schematic diagram.
Specifically, Fig. 2 is to work as to load different chemical potentials with the graphene paster 40 in resistance frequency-selective surfaces structure 1
When (0eV, 0.2eV, 0.3eV, 0.4eV, 0.5eV, 0.6eV, 0.7eV, 0.8eV, 0.9,1.0eV), reflectance factor maximum point
Not in 1.65THz, 1.74THz, 1.83THz, 1.89THz, 1.97THz, 2.02THz, 2.08THz, 2.14THz, 2.17THz and
2.19THz.And from figure 3, it can be seen that when graphene paster 40 loads different chemical potentials, the band resistance frequency selects table
Face structure 1 can show reflecting surface characteristic in different frequency bands, that is, be less than -10dB frequency range in these transmission coefficients
Do not work inside, realize the performance of frequency-adjustable.Distinguishingly, when chemical potential is 0eV, the band hinders frequency-selective surfaces structure 1
Do not worked in 1.53 to 1.76THz.When chemical potential is 0.8eV, the band resistance frequency-selective surfaces structure 1 arrives 1.9
Do not worked in 2.42THz.It can be seen that this frequency-selective surfaces in band-stop response (in some special frequency channels not work from the two figures
Make, worked in remaining frequency range).
Because the electrical conductivity of graphene paster 40 can be adjusted by chemical potential, so graphene is widely used in adjustable device
Part, for example, band resistance frequency-selective surfaces structure 1 can be used for making attenuator, switch, FET, amplifier, terahertz
The hereby part such as antenna, wave filter and frequency mixer, can meet the needs of multiband/broadband in communication system, and realize communication
Frequency-adjustable and band-stop response in system.
The preferred embodiments of the present invention are these are only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (9)
1. a kind of band resistance frequency-selective surfaces structure, it is characterised in that including dielectric-slab, be arranged on the metal of dielectric-slab upper surface
Paster and graphene paster, wherein：
The metal patch includes annulus paster and the cross-shaped patch being arranged in annulus, two sides of the cross-shaped patch
Inner circle with annulus paster is connected；And
Four arc shaped slits are set on the annulus paster, a graphene paster, each graphene are set in each arc shaped slits
Paster is seamless applying in an arc shaped slits.
2. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the radian phase of each arc shaped slits
The spacing distance and interval angles all same of same and two neighboring arc shaped slits.
3. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the metal patch and the stone
The thickness all same of black alkene paster.
4. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the phase on two sides in the gap
The center of circle for the border circular areas that intersection point is surrounded with the graphene paster overlaps.
5. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the cross-shaped patch is by annulus
Paster is divided into four 90 degree of circular arc, the arc-shaped slit for setting a radian to be less than 90 degree in each 90 degree of circular arc centre positions
Gap, the interior graphene paster that an arc is set of each arc shaped slits.
6. band according to claim 5 hinders frequency-selective surfaces structure, it is characterised in that the arc shaped slits and graphene
The radian of paster is 23 degree.
7. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the dielectric-slab is clear glass
Square dielectric-slab.
8. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the length and width of the dielectric-slab
Band is 52.5 microns, the thickness of the dielectric-slab is 1 micron, and the length and width of the metal patch are 52.5 microns,
The length of each edge in the criss-cross gap is 39 microns, width is 3 microns, the width of the annulus of the graphene paster
Spend for 3 microns.
9. band according to claim 1 hinders frequency-selective surfaces structure, it is characterised in that the chemistry of the graphene paster
The voltage that gesture adjustment section is applied is 0 electron-volt to 1 electron-volt.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326889A (en) * | 2018-10-19 | 2019-02-12 | 中国科学院重庆绿色智能技术研究院 | A kind of frequency-selective surfaces Electromgnetically-transparent amplitude modulator based on graphene |
| CN110783712A (en) * | 2019-10-27 | 2020-02-11 | 山西大学 | Ultra-wideband strong electromagnetic field protection device |
| CN111883888A (en) * | 2020-08-07 | 2020-11-03 | 安徽华东光电技术研究所有限公司 | W-band reconfigurable microstrip filter based on intercalated graphene and manufacturing method thereof |
| CN115275588A (en) * | 2022-07-20 | 2022-11-01 | 电子科技大学 | Terahertz intelligence super surface antenna unit based on graphite alkene |
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| CN104112887A (en) * | 2014-07-09 | 2014-10-22 | 电子科技大学 | Uniplanar compact electromagnetic band gap structure |
| CN104916920A (en) * | 2015-05-29 | 2015-09-16 | 上海交通大学 | Dual-band continuously tunable terahertz wave meta-material based on thermal driving |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326889A (en) * | 2018-10-19 | 2019-02-12 | 中国科学院重庆绿色智能技术研究院 | A kind of frequency-selective surfaces Electromgnetically-transparent amplitude modulator based on graphene |
| CN109326889B (en) * | 2018-10-19 | 2021-03-12 | 中国科学院重庆绿色智能技术研究院 | Frequency selection surface electromagnetic wave transmission amplitude modulator based on graphene |
| CN110783712A (en) * | 2019-10-27 | 2020-02-11 | 山西大学 | Ultra-wideband strong electromagnetic field protection device |
| CN111883888A (en) * | 2020-08-07 | 2020-11-03 | 安徽华东光电技术研究所有限公司 | W-band reconfigurable microstrip filter based on intercalated graphene and manufacturing method thereof |
| CN111883888B (en) * | 2020-08-07 | 2021-07-06 | 安徽华东光电技术研究所有限公司 | W-band reconfigurable microstrip filter based on intercalated graphene and manufacturing method thereof |
| CN115275588A (en) * | 2022-07-20 | 2022-11-01 | 电子科技大学 | Terahertz intelligence super surface antenna unit based on graphite alkene |
| CN115275588B (en) * | 2022-07-20 | 2023-09-01 | 电子科技大学 | Terahertz intelligent super-surface antenna unit based on graphene |
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