CN104916920A - Dual-band continuously tunable terahertz wave meta-material based on thermal driving - Google Patents
Dual-band continuously tunable terahertz wave meta-material based on thermal driving Download PDFInfo
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Abstract
The invention provides a dual-band continuously tunable terahertz wave meta-material based on thermal driving. The dual-band continuously tunable terahertz wave meta-material comprises a silicon substrate and four "T"-shaped cantilever beams which are arranged on the silicon substrate. The tail ends of the four "T"-shaped cantilever beams are fixed on the substrate together in a mutually perpendicular way, and the rest parts are separated from the silicon substrate. Each cantilever beam is composed of a lower dielectric layer and an upper metal layer. The dielectric layer and the metal layer are different in thermal expansion coefficient. The cantilever beams are formed by dielectric and metal which are different in the thermal expansion coefficient, and continuous tuning of resonant frequency of electromagnetic response is realized by controlling the relative rotating angle of the cantilever beams and the silicon substrate through environment temperature. The dual-band continuously tunable terahertz wave meta-material is simple in structural design and processing technology, and terahertz wave band transmission of incident electromagnetic wave of the terahertz wave band meta-material is enabled to possess two continuously tunable bands so that the terahertz wave band meta-material with novel performance is designed.
Description
Technical field
What the present invention relates to is the device of a kind of micro-nano technology technique in conjunction with field of micro electromechanical technology, the specifically continuously adjustable THz wave Meta Materials of a kind of double frequency-band based on thermal drivers.
Background technology
By cutting out, process and designing nature material, thus realize the manual control to electronics, photon and some other elementary excitation quasi particle, be the emphasis of photoelectricity scientific research always.
Meta Materials, be also referred to as specific materials, it is the composite material of a kind of engineer processing, this material has the peculiar physical property that negative index, negative magnetoconductivity, negative permittivity etc. surmount conventional material, because can be applicable to the exploitation of function element, as nanometer waveguide, surface plasma photon chip, filter, coupler, modulator and switch, the application of super diffraction limit high-resolution imaging, nano-photoetching erosion art, biology sensor, detector and military stealth material etc.
The frequency of Terahertz (THz) radiation is 0.1-10THz, in electromagnetic spectrum microwave and infrared between, be in the transitional region that electronics acquires photonic propulsion.Limited THz source and the shortage of detector result in the research of Terahertz Technology will be backward relative to its all band many, be once called as Terahertz space (THz Gap).The function element of current terahertz wave band is relatively less, limits further developing of Terahertz Technology.Meta Materials can realize flexile control to the amplitude of terahertz wave band, phase place, polarization and propagation, thus provides a kind of effective way realizing Terahertz function element.On the other hand, terahertz time-domain spectroscopic technology can detect amplitude and the phase place of electric field simultaneously, can measure the electromagnetic response characteristic of Meta Materials more all sidedly, and therefore, Terahertz Technology spreads mutually with the development of material and coordinates.
The preparation developing into Meta Materials of micro-nano technology technology is simultaneously provided convenience, and also further promotes the development of Meta Materials, can deepen the understanding to Meta Materials electromagnetic response characteristic.Micro-nano technology technology mainly refers to the processing carrying out aperture, micropore, microflute, micro-complex surface on very little or very thin workpiece.The processing method of terahertz wave band Meta Materials mainly contains photoetching technique, templated deposition technology, Method of printing and optical fiber drawing method etc.MEMS is also referred to as micromechanics or micro-system.MEMS process technology not only comprises Surface-micromachining process, goes back occlusion body process technology, as the etching of silicon base.Different from other adjustable Meta Materials, the introducing of MEMS can realize the Dynamic controlling of metamaterial structure.So the resonance response of Meta Materials can be made to change along with the change of coupling in conjunction with MEMS method, be between research metamaterial modular construction and the important method of cellular construction inner couplings, it is also one of current study hotspot.
This structural design and processing technology simply, and can realize double frequency-band and resonance frequency continuous tuning by the control of ambient temperature simultaneously.Its general principle is thermal tuning, and the cantilever beam of the dielectric that namely thermal coefficient of expansion is different and metal composition realizes the continuous tuning of the resonance frequency to electromagnetic response by the relative rotation angle that ambient temperature controls cantilever beam and silicon substrate.In addition, this construction unit symmetry makes vertical incidence electromagnetic different polarization directional response consistent.Therefore, this structure can be used for practical function device, as filter, coupler, switch and sensor.At present, the metamaterial structure that the multiple performance such as wideband, multiband, amplitude modulation is concentrated is focus and the challenge in current Meta Materials field.
Find by prior art documents, Govind Dayal and S Anantha Ramakrishna, at " JOURNAL OF OPTICS " 7, writes articles " Design of multi-band metamaterial perfect absorbers with stacked metal-dielectric disks " (" the perfect absorber of the multiband that metal-media disks is formed " " Acta Optica ") in 055106 (2013).The method proposing to realize multiband in this article is the meta-material absorber that " three-decker " (medium-metal-medium) superposition can be formed together multiband.But, need to change the frequency band that different medium layer just can obtain different frequency ranges, the continuous tuning of resonance frequency can not be carried out.
Summary of the invention
The present invention is directed to existing performance above shortcomings, there is provided a kind of micro-nano technology technique in conjunction with the continuously adjustable THz wave of the double frequency-band based on the thermal drivers Meta Materials of micro-electromechanical technology, double frequency-band and resonance frequency continuous tuning can be realized by the control of temperature simultaneously, make the Meta Materials device that performance is more excellent.
The present invention is achieved by the following technical solutions, the present invention includes: silicon substrate and four the "T"-shaped cantilever beams be located on silicon substrate, it is characterized in that: the end of four "T"-shaped cantilever beams is fixed on substrate jointly in orthogonal mode, and remainder is separated with silicon substrate; Described cantilever beam is made up of underlying dielectric layer and upper metal layers, and dielectric layer is different with metal level thermal coefficient of expansion.
In the present invention, the cantilever beam of the dielectric layer that described THz wave Meta Materials utilizes thermal coefficient of expansion different and metal level composition, the relative angle controlling cantilever beam and silicon substrate by temperature realizes the continuous tuning of the resonance frequency to electromagnetic response.
In the present invention, described THz wave Meta Materials is through heating, along with the rising of temperature, the thermal coefficient of expansion of metal level is larger than dielectric layer, then deformation ratio dielectric layer large of metal level, simultaneously cantilever beam one end is fixed, then the non-stiff end of cantilever beam is gradually toward having a downwarp, and namely the angle of cantilever beam and silicon substrate is reduced to zero i.e. "Off" state gradually; When the temperatures return to ambient conditions, cantilever beam gets back to the state and "On" state that initially stick up, realizes cantilever beam and mutually switches between "On" state and "Off" state.
Compared with prior art, the present invention has following beneficial effect:
The cantilever beam of the dielectric that the present invention utilizes thermal coefficient of expansion different and metal composition, the relative angle controlling cantilever beam and silicon substrate by temperature realizes the continuous tuning of the resonance frequency to electromagnetic response.Structural design of the present invention and processing technology simply, make the incident electromagnetic wave of terahertz wave band Meta Materials have the double frequency-band of two continuously-tunings in terahertz wave band transmission, thus have devised a kind of terahertz wave band Meta Materials of performance novelty.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is three-dimension integrally structural representation of the present invention;
Fig. 2 is structure vertical view of the present invention;
Fig. 3 is structure cutaway view of the present invention;
Fig. 4 is the "On" state sticked up after the "T"-shaped cantilever beam release of the present invention;
Fig. 5 is the "T"-shaped cantilever of the present invention past "Off" state had a downwarp under the effect of thermal drivers;
Fig. 6 is emulation Terahertz transmission curve figure of the present invention;
The emulation Terahertz transmission curve figure of Fig. 7 to be curved edge of the present invention be straight edges.
In figure: silicon substrate 1, "T"-shaped cantilever beam 2, stiff end 3, metal level 4, dielectric layer 5.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, the present embodiment comprises: silicon substrate 1, "T"-shaped cantilever beam 2, stiff end 3, wherein: four "T"-shaped cantilever beams 2 are located on silicon substrate 1, and its end is fixed on substrate jointly in orthogonal mode, i.e. stiff end 3 place.Except fixed end part is connected with silicon substrate 1, remainder is separated with silicon substrate 1 after release.
Above "T"-shaped cantilever beam 2,2 times of lateral length are less than the length of side of substrate.Four "T"-shaped cantilever beam structures 2 are identical.
Described silicon substrate 1 is one piece of smooth low-resistivity silicon chip, as the supporting layer of whole device.Owing to there is the impact of electric capacity between when Meta Materials and substrate occur to interact, the formant of Meta Materials thus can be caused to offset.So when metamaterial structure is produced on the little silicon substrate of low-resistance, low-k, thickness, capacitance to substrate is little especially to the contribution of integral capacitor, the capacitance variations of Meta Materials itself is relatively just large, and sensitivity is corresponding just high, thus is conducive to detecting material minor variations and reduces amount of samples.
As shown in Figure 2, can find out that four "T"-shaped cantilever beam structures 2 are identical further.Elementary cell (device be namely made up of silicon substrate 1, "T"-shaped cantilever beam 2, stiff end 3 as shown in Figure 1) in the present embodiment will in OXY plane period profile.
As shown in Figure 3, described "T"-shaped cantilever beam 2 comprises: metal level 4 and the dielectric layer 5 be arranged on the downside of it.Dielectric is different with thermal expansion metal coefficient.Metal level 4 is identical with the top lateral length of dielectric layer 5, and less than the length of silicon substrate 1, and the width of metal level 4 is less than the width of dielectric layer 5, and the width of silicon substrate 1 is larger than the width of dielectric layer 5.
Described silicon substrate resistivity is <0.02 Ω cm, and thickness is 365-380 μm.
As shown in Figure 4, position A is that now maximum to upper angle, the electric capacity between substrate and Meta Materials is minimum, and resonance frequency is maximum due to the state that surface stress sticks up after the release of Meta Materials device cantilever beam.
As shown in Figure 5, position B is Meta Materials device cantilever beam past state had a downwarp under the effect of thermal drivers, and now angle is zero, and the electric capacity between substrate and Meta Materials is maximum, and resonance frequency is minimum.
The operation principle of this example is: namely this structure heats through thermal drivers, along with the rising of temperature, because the thermal coefficient of expansion of metal is than greatly dielectric, thus deformation ratio dielectric layer large of metal level, due to the effect of stiff end, the non-stiff end of cantilever beam is gradually toward having a downwarp, and namely the angle of cantilever beam and substrate is reduced to zero i.e. "Off" state B gradually.When the temperatures return to ambient conditions, the initial condition that cantilever beam sticks up due to surface stress after getting back to cantilever beam release and "On" state A, namely cantilever beam mutually can switch between "On" state A and "Off" state B.When cantilever beam is transformed into "Off" state B from "On" state A, the distance between substrate and cantilever beam diminishes gradually, and its electric capacity becomes large, and integral capacitor becomes large, and resonance frequency reduces, and occurs blue-shifted phenomenon.
Fig. 6 is the Terahertz transmission curve figure of the metamaterial structure emulation of design, wherein o represents the angle between substrate and cantilever beam, because its structure is symmetrical to vertical incidence electromagnetic wave, institute in te mode, TM mode transfer curve is identical, there are three formants as we can see from the figure between 0.2-2.23Thz, wherein there are two formants to carry out tuning, are respectively LC resonance and are respectively LC resonance (i.e. low-frequency resonance ω
lC=(LC)
-1/2, resonance frequency determines primarily of inductance L, electric capacity C) and plasma resonance (i.e. high-frequency resonance
d determines primarily of the geometric parameter of Meta Materials, ε
effaverage dielectric constant for environment), middle formant may be by adjacent resonant element between substrate and Meta Materials between capacitive coupling cause.When the curved edge of "T"-shaped cantilever beam changes straight edges into, other parameter constants, now simulation result as shown in Figure 7, there are three formants too and all tunable between 0.2-2.23Thz, there is Red Shift Phenomena in formant frequency entirety simultaneously, illustrates that the length of edge shape has material impact to resonance frequency; Can also be the shapes such as V-arrangement, hyperbola, Ω shape, circular SRR by edge designs.
The present invention adopts micro-nano technology technique in conjunction with micro-electromechanical technology, produce the continuously adjustable THz wave Meta Materials of double frequency-band based on thermal drivers, compared with existing Meta Materials device, its structure is simple, make easily, volume reduces, and can realize double frequency-band and resonance frequency continuous tuning by the control of temperature simultaneously.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (8)
1. the continuously adjustable THz wave of the double frequency-band based on a thermal drivers Meta Materials, comprise: silicon substrate and four the "T"-shaped cantilever beams be located on silicon substrate, it is characterized in that: the end of four "T"-shaped cantilever beams is fixed on substrate jointly in orthogonal mode, and remainder is separated with silicon substrate; Described cantilever beam is made up of underlying dielectric layer and upper metal layers, and dielectric layer is different with metal level thermal coefficient of expansion.
2. the continuously adjustable THz wave Meta Materials of the double frequency-band based on thermal drivers according to claim 1, is characterized in that, the resistivity <0.02 Ω cm of described silicon substrate.
3. the continuously adjustable THz wave Meta Materials of the double frequency-band based on thermal drivers according to claim 2, is characterized in that, the thickness of described silicon substrate is 365-380 μm.
4. the continuously adjustable THz wave Meta Materials of the double frequency-band based on thermal drivers according to claim 1, is characterized in that, four described "T"-shaped cantilever beam structures are identical.
5. the continuously adjustable THz wave Meta Materials of the double frequency-band based on thermal drivers according to claim 4, is characterized in that, 2 times of length horizontal above described "T"-shaped cantilever beam are less than the length of side of substrate.
6. the continuously adjustable THz wave of the double frequency-band based on the thermal drivers Meta Materials according to any one of claim 1-5, it is characterized in that, described metal level is identical with the top lateral length of dielectric layer, and it is less than the length of silicon substrate, the width of metal level is less than the width of dielectric layer, and the width of silicon substrate is larger than the width of dielectric layer.
7. the continuously adjustable THz wave of the double frequency-band based on the thermal drivers Meta Materials according to any one of claim 1-5, it is characterized in that, the cantilever beam of the dielectric layer that described THz wave Meta Materials utilizes thermal coefficient of expansion different and metal level composition, the relative angle controlling cantilever beam and silicon substrate by temperature realizes the continuous tuning of the resonance frequency to electromagnetic response.
8. the continuously adjustable THz wave Meta Materials of the double frequency-band based on thermal drivers according to claim 7, it is characterized in that, described THz wave Meta Materials is through heating, along with the rising of temperature, the thermal coefficient of expansion of metal level is larger than dielectric layer, then deformation ratio dielectric layer large of metal level, and cantilever beam one end is fixed simultaneously, then the non-stiff end of cantilever beam is gradually toward having a downwarp, and namely the angle of cantilever beam and silicon substrate is reduced to zero i.e. "Off" state gradually; When the temperatures return to ambient conditions, cantilever beam gets back to the state and "On" state that initially stick up, realizes cantilever beam and mutually switches between "On" state and "Off" state.
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| CN105896096A (en) * | 2016-05-06 | 2016-08-24 | 上海交通大学 | Ultrathin flexible electric-heating tunable meta-material based on three-dimensional Ohm structure and preparation of same |
| CN107478336A (en) * | 2017-09-01 | 2017-12-15 | 中国科学院电子学研究所 | Terahertz imaging array chip and preparation method thereof, imaging system |
| CN107634348A (en) * | 2017-08-11 | 2018-01-26 | 深圳市南华子健信息技术有限公司 | The band logical frequency-selective surfaces structure of frequency-adjustable |
| CN107634347A (en) * | 2017-08-11 | 2018-01-26 | 深圳市南华子健信息技术有限公司 | Band resistance frequency-selective surfaces structure |
| CN107834207A (en) * | 2017-11-28 | 2018-03-23 | 电子科技大学 | A kind of mercuri temperature-tunable electromagnetism Meta Materials and manufacture method |
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| CN105896098B (en) * | 2016-04-25 | 2019-03-01 | 中国工程物理研究院激光聚变研究中心 | A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant |
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| CN113049525A (en) * | 2021-03-11 | 2021-06-29 | 华东交通大学 | Terahertz metamaterial absorber, preparation method and trace benzoic acid content detection method based on terahertz metamaterial absorber |
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| CN105896098B (en) * | 2016-04-25 | 2019-03-01 | 中国工程物理研究院激光聚变研究中心 | A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant |
| CN105896096A (en) * | 2016-05-06 | 2016-08-24 | 上海交通大学 | Ultrathin flexible electric-heating tunable meta-material based on three-dimensional Ohm structure and preparation of same |
| CN107634347A (en) * | 2017-08-11 | 2018-01-26 | 深圳市南华子健信息技术有限公司 | Band resistance frequency-selective surfaces structure |
| CN107634348A (en) * | 2017-08-11 | 2018-01-26 | 深圳市南华子健信息技术有限公司 | The band logical frequency-selective surfaces structure of frequency-adjustable |
| CN107478336A (en) * | 2017-09-01 | 2017-12-15 | 中国科学院电子学研究所 | Terahertz imaging array chip and preparation method thereof, imaging system |
| CN111542774A (en) * | 2017-11-07 | 2020-08-14 | 索菲亚·拉希米内贾德 | Non-contact waveguide switch and method for manufacturing waveguide switch |
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| CN107834207B (en) * | 2017-11-28 | 2020-07-31 | 电子科技大学 | Mercury-based temperature-tunable electromagnetic metamaterial and manufacturing method thereof |
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| CN113049525B (en) * | 2021-03-11 | 2022-05-17 | 华东交通大学 | Terahertz metamaterial absorber and trace benzoic acid detection method based on metamaterial |
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