CN104051825A - Band-pass hop active frequency selective surface - Google Patents
Band-pass hop active frequency selective surface Download PDFInfo
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- CN104051825A CN104051825A CN201410251547.9A CN201410251547A CN104051825A CN 104051825 A CN104051825 A CN 104051825A CN 201410251547 A CN201410251547 A CN 201410251547A CN 104051825 A CN104051825 A CN 104051825A
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Abstract
The invention provides a band-pass hop active frequency selective surface which is of an appressed layered structure. A second protection layer is arranged at the front end, and a first layer frequency selective surface, a first protection layer, a second layer frequency selective surface and a third protection layer are arranged afterwards in sequence. The first layer frequency selective surface and the second layer frequency selective surface are parallel to each other, medium substrates are attached to the surface of the first layer frequency selective surface and the surface of the second layer frequency selective surface, six hollow channels are photo-etched on each frequency selective surface in the mode of symmetric with the central axis parallel to the short edges, the first channels, the third channels, the fourth channels and the sixth channels are parallel to the long edges of the frequency selective surfaces, the second channels and the fifth channels are parallel to the short edges of the frequency selective surfaces, the first channels, the second channels and the third channels are connected, the fourth channels, the fifth channels and the sixth channels are connected, and at least two sets of active switches symmetric with the central axis parallel to the short edges are arranged in the hollow channels. According to the band-pass hop active frequency selective surface, hop of wave-transparent frequency bands can be achieved through the on and off of the active switches, quite good damping effects on the frequency other than the wave-transparent frequency bands are achieved, and the suitable angle range is larger.
Description
Technical field
The present invention relates to microwave filtering field, particularly the logical active frequency-selective surfaces of saltus step formula of a kind of band.
Background technology
Frequency-selective surfaces (Frequency Selective Surface, FSS) is the two-dimensional and periodic array structure that a kind of electromagnetic wave to incident has selecting frequency characteristic, and this array structure is made up of a large amount of passive resonance unit periodic arrangement.Frequency-selective surfaces shows the selecting frequency characteristic of total reflection or total transmissivity to the incident electromagnetic wave at resonance frequency place, from essence, frequency-selective surfaces is a kind of special spatial filter.
Frequency-selective surfaces all has a lot of important application in many technology of modern times, and representative is exactly the application of frequency-selective surfaces in stealth technology.In modern three large military technologies, stealth technology is the great military technology attracting worldwide attention.Since the sixties in last century, frequency-selective surfaces has shown excellent properties in radar stealth technology, makes it always the extremely great attention of various countries.Along with the development of frequency selecting surface technique, increasing cellular construction by scholar's research out, has been realized the Stealth Fighter of various excellences.But existing frequency-selective surfaces is passive frequencies selects surface, the resonance frequency of this structure, bandwidth of operation, stability etc. all cannot change after machining, thereby in electromagnetic environment complicated and changeable, cannot adapt to fast the variation of external electromagnetic environment and reduce the effect of its performance.
Summary of the invention
For overcoming the existing problem of prior art, order of the present invention provides a kind of logical active frequency-selective surfaces of saltus step formula.
The technical scheme that realizes the object of the invention is: the logical active frequency-selective surfaces of saltus step of a kind of band, be the layer structure of being close to, front end is the second protective layer, is ground floor frequency-selective surfaces, the first protective layer, second layer frequency-selective surfaces and the 3rd protective layer successively backward; Described ground floor frequency-selective surfaces and second layer frequency-selective surfaces are parallel to each other, and two-sided inter metal dielectric layer and the dielectric substrate of being coated with successively; On ground floor frequency-selective surfaces, corrode six hollow out passages according to the axis symmetrical beam being parallel to compared with minor face, wherein passage one be not connected with passage six and symmetrical and be parallel to longer sides, passage two and the passage five of ground floor frequency-selective surfaces symmetrical and be parallel to ground floor frequency-selective surfaces compared with minor face, passage three is not connected with passage four and is symmetrical and be parallel to the longer sides of ground floor frequency-selective surfaces, described passage one, passage two and passage three are connected, and described passage four, passage five and passage six are connected; The size of second layer frequency-selective surfaces is identical with ground floor frequency-selective surfaces with structure; Two groups of overarm wall type mems switches are at least set in the hollow out passage of ground floor frequency-selective surfaces, each group overarm wall type mems switch comprises two about being parallel to compared with the axis of minor face symmetrically arranged overarm wall type mems switch, feeding network is set on ground floor frequency-selective surfaces and is connected with overarm wall type mems switch; The hollow out passage of second layer frequency-selective surfaces at least arranges two groups of overarm wall type mems switches, and the position of each group overarm wall type mems switch is corresponding with the position of the overarm wall type mems switch on ground floor frequency-selective surfaces.
Compared with prior art, its remarkable advantage is in the present invention: (1), by conducting and the disconnection of overarm wall type mems switch, realizes the saltus step of wave transparent frequency range; (2) adopt two-layer frequency-selective surfaces and less unit interval, there is extraordinary attenuating for the frequency beyond wave transparent frequency range; (3) good, the applicable angular range of bandpass flatness is large, loss is little, stability is high; (4) processing is relatively simple, can be widely used in radar system.
Brief description of the drawings
Fig. 1 is the logical active frequency-selective surfaces structure of the saltus step formula schematic diagram of a kind of band.
Fig. 2 is a kind of beam type mems switch load mode schematic diagram with the logical active frequency-selective surfaces of saltus step formula.
Wave penetrate capability curve when Fig. 3 is three groups of switches disconnections of the logical active frequency-selective surfaces of saltus step formula of a kind of band.
Fig. 4 is only wave penetrate capability curve when the 1st group of switch conduction of the logical active frequency-selective surfaces of saltus step formula of a kind of band.
Fig. 5 is only wave penetrate capability curve when the 2nd group of switch conduction of the logical active frequency-selective surfaces of saltus step formula of a kind of band.
Fig. 6 is only wave penetrate capability curve when the 3rd group of switch conduction of the logical active frequency-selective surfaces of saltus step formula of a kind of band.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
The logical active frequency-selective surfaces of saltus step of a kind of band, is the layer structure of being close to, and front end is the second protective layer 2, is ground floor frequency-selective surfaces 4, the first protective layer 1, second layer frequency-selective surfaces 5 and the 3rd protective layer 3 successively backward; Described ground floor frequency-selective surfaces 4 and second layer frequency-selective surfaces 5 are parallel to each other, and two-sided with dielectric substrate; Described ground floor frequency-selective surfaces 4 and size and the structure of second layer frequency-selective surfaces 5 are just the same, furtherly, the size of the hollow out passage on ground floor frequency-selective surfaces 4 and second layer frequency-selective surfaces 5 and the position on frequency-selective surfaces are just the same.In practical operation, the effect that two-layer frequency-selective surfaces plays filtering than one deck is more obvious, if two-layer above frequency-selective surfaces is set, filtering characteristic significantly reduces.
Six hollow out passages of photoetch on ground floor frequency-selective surfaces 4, wherein every two hollow out passages are according to the axis symmetry being parallel to compared with minor face, wherein passage one, passage two and passage three are connected, passage four, passage five and passage six are connected, passage one be not connected with passage six and symmetrical and be parallel to longer sides, passage two and the passage five of ground floor frequency-selective surfaces 4 symmetrical and be parallel to ground floor frequency-selective surfaces 4 compared with minor face, passage three is not connected with passage four and is symmetrical and be parallel to the longer sides of ground floor frequency-selective surfaces 4;
Also six hollow out passages of photoetch on second layer frequency-selective surfaces 5, wherein every two hollow out passages are according to the axis symmetry being parallel to compared with minor face, wherein passage seven is not connected with passage 12 and is symmetrical and be parallel to the longer sides of second layer frequency-selective surfaces 5, passage eight and passage 11 symmetrical and be parallel to second layer frequency-selective surfaces 5 compared with minor face, passage nine is not connected with passage ten and is symmetrical and be parallel to the longer sides of two layers of frequency-selective surfaces 5, described passage seven, passage eight and passage nine are connected, described passage ten, passage 11 and passage 12 are connected,
In order to realize the function of passband saltus step, two groups of overarm wall type mems switches are at least set in the hollow out passage of ground floor frequency-selective surfaces 4, in the time of one group of switch conduction, complete the selection of a sub band, in the time of conducting rest switch, can realize passband saltus step moment, and then wave transparent frequency range changes.Each group overarm wall type mems switch comprises two about being parallel to compared with the axis of minor face symmetrically arranged overarm wall type mems switch, and the feeding network that on ground floor frequency-selective surfaces 4, magnitude setting is identical with overarm wall type mems switch group number is connected feed with overarm wall type mems switch respectively; The hollow out passage of second layer frequency-selective surfaces 5 at least arranges two groups of overarm wall type mems switches, and the position of each group overarm wall type mems switch is corresponding with the position of the overarm wall type mems switch on ground floor frequency-selective surfaces 4, and the position of the overarm wall type mems switch on ground floor frequency-selective surfaces 4 and second layer frequency-selective surfaces 5 on frequency-selective surfaces is just the same.The first protective layer 1, the second protective layer 2 and the 3rd protective layer 3 are by foam-filled.
In conjunction with Fig. 2, feeding network is set on frequency-selective surfaces and is connected with overarm wall type mems switch, play feed effect.This feeding network by feed line 7, connect the spun gold wire jumper 8 of feed line and overarm wall type mems switch, and the ground wire 9 that connects overarm wall type mems switch forms, feed line 7 is made up of conducting metals such as gold, silver, feeding network is overarm wall type mems switch feed.
Operation principle of the present invention is: on frequency-selective surfaces, arrange after overarm wall type mems switch, change the concrete pattern of frequency-selective surfaces, thereby make electromagnetic wave show different filtering characteristics, can meet the selection of frequency-selective surfaces to different frequency wave band according to the position of overarm wall type mems switch setting, and the quantity of switch can realize the saltus step phenomenon that wave transparent frequency range all can occur in the time of each group switch of conducting.Particularly, some groups of overarm wall type mems switches are set on frequency-selective surfaces, the break-make of first group of switch can realize two groups of states; When after second group of switch opens, the pattern of frequency-selective surfaces changes, and its pass-band performance makes first group of switch failure, no matter first group of switch in which kind of state its all no longer impact select characteristic frequently; In like manner, after the 3rd group of switch conduction, first group and second group of switch also will lose efficacy; After one group of switch of later every conducting, before it, the switch of conducting no longer affects and selects characteristic frequently.
Concrete, the active frequency-selective surfaces that the present invention chooses X-band is described as an example, should understand, for its all band, the operation principle of active frequency-selective surfaces is identical, and just the position of frequency-selective surfaces size, channel width, overarm wall type mems switch and number can require to change according to frequency range.
In conjunction with Fig. 1, whole device thickness is 24.834mm, wherein the length and width of ground floor frequency-selective surfaces 4 and second layer frequency-selective surfaces 5 are respectively 5.1mm and 4.5mm, thickness is 0.29mm, hollow out channel width is 0.5mm, distance selects marginal surface to be 0.35mm, and three groups of overarm wall type mems switches are set respectively on the hollow out passage of ground floor frequency-selective surfaces 4 and second layer frequency-selective surfaces 5; First group of overarm wall type mems switch 6-1 is arranged at passage one and passage six is interior near being parallel to ground floor frequency-selective surfaces 4 compared with the position of the axis of minor face, is specially each switch in first group of overarm wall type mems switch and is 0.9mm apart from axis; Second group of overarm wall type mems switch 6-2 is arranged in passage one and passage six away from being parallel to ground floor frequency-selective surfaces 4 compared with the position of the axis of minor face, is specially each switch in second group of overarm wall type mems switch and is 1.4mm apart from axis; The 3rd group of overarm wall type mems switch 6-3 is arranged in passage three and passage four, is specially each switch in the 3rd group of overarm wall type mems switch and is 0.4mm apart from axis; The 4th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces 5 and is corresponding with the position of first group of overarm wall type mems switch, the 5th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces 5 and is corresponding with the position of second group of overarm wall type mems switch, and the 6th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces 5 and is corresponding with the position of the 3rd group of overarm wall type mems switch.
The thickness of dielectric substrate is made as to 0.127mm; The thickness of the first protective layer 1 is 2 ~ 12mm, and dielectric constant is that the thickness of 1.5, the second protective layers 2 and the 3rd protective layer 3 is 8 ~ 20mm, and dielectric constant is 1.25.
As shown in Figure 3, in the time that three groups on ground floor frequency-selective surfaces 4 three groups of overarm wall type mems switches of hanging oneself from a beam on wall type mems switch and second layer frequency-selective surfaces 5 all disconnect, the wave transparent frequency range of the logical active frequency-selective surfaces of saltus step of band is for being 8-9GHz, wherein abscissa represents frequency, ordinate representation unit decibel (dB), S11 is that standing wave curve, S22 are attenuation curve, and wherein the decay of the frequency beyond 8-9GHz is very fast; As shown in Figure 4, when first group on ground floor frequency-selective surfaces 4 the 4th group of overarm wall type mems switch conducting of hanging oneself from a beam on wall type mems switch and second layer frequency-selective surfaces 5, when other overarm wall type mems switches disconnect, the saltus step of wave transparent frequency range is 9-10GHz; As shown in Figure 5, when second group on ground floor frequency-selective surfaces 4 the 5th group of overarm wall type mems switch conducting of hanging oneself from a beam on wall type mems switch and second layer frequency-selective surfaces 5, the saltus step of wave transparent frequency range is 10-11GHz; As shown in Figure 6, when the 3rd group on ground floor frequency-selective surfaces 4 the 6th group of overarm wall type mems switch conducting of hanging oneself from a beam on wall type mems switch and second layer frequency-selective surfaces 5, the saltus step of wave transparent frequency range is 11-12GHz.Therefore,, by control hang oneself from a beam conducting or the disconnection of wall type mems switch, the logical active frequency-selective surfaces of saltus step of band can be realized the function of filtering.
Claims (4)
1. the logical active frequency-selective surfaces of saltus step of band, be the layer structure of being close to, front end is the second protective layer (2), is ground floor frequency-selective surfaces (4), the first protective layer (1), second layer frequency-selective surfaces (5) and the 3rd protective layer (3) successively backward, described ground floor frequency-selective surfaces (4) and second layer frequency-selective surfaces (5) are parallel to each other, and surface is with dielectric substrate, upper six the hollow out passages that width is identical of axis symmetrical beam corrosion according to being parallel to compared with minor face of ground floor frequency-selective surfaces (4), wherein passage one, passage two and passage three are connected, described passage four, passage five and passage six are connected, described passage one is not connected with passage six and is symmetrical and be parallel to the longer sides of ground floor frequency-selective surfaces (4), passage two and passage five symmetrical and be parallel to ground floor frequency-selective surfaces (4) compared with minor face, passage three is not connected with passage four and is symmetrical and be parallel to the longer sides of ground floor frequency-selective surfaces (4), described passage one and passage three are about the axis symmetry that is parallel to longer sides, passage six and passage four are about the axis symmetry that is parallel to longer sides, the size of second layer frequency-selective surfaces (5) and structure are identical with ground floor frequency-selective surfaces (4), it is characterized in that:
Two groups of overarm wall type mems switches are at least set in the hollow out passage of ground floor frequency-selective surfaces (4), each group overarm wall type mems switch comprises two about being parallel to compared with the axis of minor face symmetrically arranged overarm wall type mems switch, feeding network is set on ground floor frequency-selective surfaces (4) and is connected with overarm wall type mems switch; The hollow out passage of second layer frequency-selective surfaces (5) at least arranges two groups of overarm wall type mems switches, and the position of each group overarm wall type mems switch is corresponding with the position of the overarm wall type mems switch on ground floor frequency-selective surfaces (4); Ground floor frequency-selective surfaces (4) with on second layer frequency-selective surfaces (5), be provided with feeding network and be connected with overarm wall type mems switch.
2. the logical active frequency-selective surfaces of saltus step of band according to claim 1, is characterized in that: three groups of overarm wall type mems switches are set respectively on the hollow out passage of ground floor frequency-selective surfaces (4) and second layer frequency-selective surfaces (5);
First group of overarm wall type mems switch is arranged at passage one and passage six is interior near being parallel to ground floor frequency-selective surfaces (4) compared with the position of the axis of minor face, second group of overarm wall type mems switch is arranged in passage one and passage six away from being parallel to ground floor frequency-selective surfaces (4) compared with the position of the axis of minor face, and the 3rd group of overarm wall type mems switch is arranged in passage three and passage four; The 4th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces (5) and is corresponding with the position of first group of overarm wall type mems switch, the 5th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces (5) and is corresponding with the position of second group of overarm wall type mems switch, and the 6th group of switch is arranged in the hollow out passage of second layer frequency-selective surfaces (5) and is corresponding with the position of the 3rd group of overarm wall type mems switch.
3. the logical active frequency-selective surfaces of saltus step of band according to claim 1, is characterized in that: dielectric substrate is glue, and its thickness is 0.127mm.
4. the logical active frequency-selective surfaces of saltus step of band according to claim 1; it is characterized in that: the first protective layer (1) second protective layer (2) and the 3rd protective layer (3) are by foam-filled; the thickness of the first protective layer (1) is 2 ~ 12mm; and dielectric constant is 1.5; the thickness of the second protective layer (2) and the 3rd protective layer (3) is 8 ~ 20mm, and dielectric constant is 1.25.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410251547.9A CN104051825B (en) | 2014-06-09 | 2014-06-09 | Band-pass hop active frequency selective surface |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783712A (en) * | 2019-10-27 | 2020-02-11 | 山西大学 | Ultra-wideband strong electromagnetic field protection device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170207A (en) * | 2007-11-12 | 2008-04-30 | 杭州电子科技大学 | Three-frequency bad high-performance frequency selection surface based on adjacent unit micro interference |
| WO2010092390A1 (en) * | 2009-02-13 | 2010-08-19 | University Of Kent | Tuneablefrequency selective surface |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170207A (en) * | 2007-11-12 | 2008-04-30 | 杭州电子科技大学 | Three-frequency bad high-performance frequency selection surface based on adjacent unit micro interference |
| WO2010092390A1 (en) * | 2009-02-13 | 2010-08-19 | University Of Kent | Tuneablefrequency selective surface |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783712A (en) * | 2019-10-27 | 2020-02-11 | 山西大学 | Ultra-wideband strong electromagnetic field protection device |
| CN110783712B (en) * | 2019-10-27 | 2020-11-06 | 山西大学 | Ultra-wideband strong electromagnetic field protection device |
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Inventor after: Dai Yongsheng Inventor after: Pan Hang Inventor after: Li Yongshuai Inventor after: Xu Xinying Inventor after: Deng Liang Inventor after: Zhu Dan Inventor after: Luo Ming Inventor after: Chen Xiangzhi Inventor after: Yang Maoya Inventor after: Zhou Wei Inventor after: Zhou Yanfang Inventor after: Zhang Chao Inventor before: Deng Liang Inventor before: Pan Hang Inventor before: Li Yongshuai Inventor before: Xu Xinying Inventor before: Zhu Dan Inventor before: Luo Ming Inventor before: Chen Xiangzhi Inventor before: Dai Yongsheng Inventor before: Yang Maoya Inventor before: Zhou Wei Inventor before: Zhou Yanfang Inventor before: Zhang Chao |
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Free format text: CORRECT: INVENTOR; FROM: DENG LIANG ZHU DAN LUO MING CHEN XIANGZHI DAI YONGSHENG YANG MAOYA ZHOU WEI ZHOU YANFANG ZHANG CHAO PAN HANG LI YONGSHUAI XU XINYING TO: DAI YONGSHENG DENG LIANG ZHU DAN LUO MING CHEN XIANGZHI YANG MAOYA ZHOU WEI ZHOU YANFANG ZHANG CHAO PAN HANG LI YONGSHUAI XU XINYING |
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