CN207947381U - A kind of improved multifunctional active frequencies selection surface - Google Patents
A kind of improved multifunctional active frequencies selection surface Download PDFInfo
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- CN207947381U CN207947381U CN201820080137.6U CN201820080137U CN207947381U CN 207947381 U CN207947381 U CN 207947381U CN 201820080137 U CN201820080137 U CN 201820080137U CN 207947381 U CN207947381 U CN 207947381U
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Abstract
The utility model discloses a kind of improved multifunctional active frequencies to select surface, includes the metal periodic array being made of the metal unit in periodic arrangement of medium substrate and Orthogonally arrangement in medium substrate both sides；Metal unit is square, including two metal fine structures, two slotted metal T-shaped structures and a PIN diode；Slotted metal T-shaped structure includes horizontal edge and T-shaped structure；The setting of two metal fine parallelism structurals, the horizontal edge of two slotted metal T-shaped structures and the horizontal edge of T-shaped structure are arranged in parallel, and the vertical edge of T-shaped structure is drawn a straight line by PIN diode.In adjacent metal unit varactor is loaded between the horizontal edge of two slotted metal T-shaped structures.The utility model integrates three kinds of electromagnetic switch, Polarization selection and frequency tuning function solenoids, more can actively manipulate electromagnetic wave, multifunctional equipment in intelligent building and communication system etc. has important application prospect.
Description
Technical field
The utility model is related to electromagnetism Meta Materials technical fields, and in particular to a kind of improved multifunctional active frequencies selection
Surface.
Background technology
Frequency-selective surfaces（Frequency Selective Surface, FSS）It is to be pasted by the metal of periodic arrangement
Piece or gap composition, have good spa-tial filter properties, can be reflected with outer electromagnetic wave while electromagnetic wave in transmission belt.
Traditional passive FSS after the process, electromagnetic performance with regard to substantially stationary, can not with external environment variation and
Change.Active frequencies select surface（Active Frequency Selective Surface, AFSS）It can be outer by changing
Add excitation（Such as voltage swing, electric field strength and luminous intensity）Actively to change the electromagnetic performance of FSS.Automatically controlled AFSS can pass through
Load active device（Such as PIN diode, varactor）Realize restructural electromagnetic property, it is active in order to control these
The state of device, it usually needs add offset line in AFSS arrays.However, additional feeder line can greatly influence the electricity of AFSS
Magnetic characteristic（Such as frequency shift (FS), Insertion Loss increase and spurious signal response）, while manufacture difficulty and cost of manufacture can be increased.Pass through
The topological structure for rationally designing AFSS regard metal periodic structure itself as feeder line, can remove AFSS array built-in redundancies
Feeder line greatly reduces the negative effect that feed system is brought.Active device usually has two kinds of feeds of Series FPB and parallel FPB
Form.Tandem type feed simultaneously feeds row's active device, and applying bias voltage value can be with active device quantity
Increase and increases, more seriously, when the damage of some active device does not work, the active device of one entire row of place is just all
Cisco unity malfunction, to influence the electromagnetic property that entire active frequencies select surface.Therefore, it is necessary to study active with design
The parallelly feeding form of device.
Although having at present much, the AFSS with automatically controlled restructural characteristic is seen in report, since it has a single function, makes
These designs many times to cannot be satisfied external complex electromagnetic environment adjustable to the functional diversity and state of electronic equipment
The requirements such as property.Therefore, it is necessary to study integrate the more of a variety of function solenoids such as electromagnetic switch, Polarization selection and frequency tuning
Function AFSS provides important technical support for the design of electromagnetism stealth, electromagnetic compatibility and reconfigurable device, has important military affairs
With civilian value.
Utility model content
Technical problem to be solved in the utility model is to provide one kind for defect involved in background technology and change
Into type multifunctional active frequency-selective surfaces, for the first time by three kinds of function solenoid collection such as electromagnetic switch, Polarization selection and frequency tuning
At in same structure, the problems such as existing active frequencies selection function of surface is single can be effectively solved.
The utility model uses following technical scheme to solve above-mentioned technical problem：
A kind of improved multifunctional active frequencies select surface, including medium substrate, be arranged on the upside of medium substrate the
One metal periodic array and the second metal periodic array being arranged on the downside of medium substrate；
The first metal periodic array, the second metal periodic array include that several are in the gold that cyclic array is distributed
Belong to unit；
The square that the metal unit is centrosymmetric, including two metal fine structures, two slotted metal T shape knots
Structure and a PIN diode；
Described two slotted metal T-shaped structures include a horizontal edge and a T-shaped structure, and the T-shaped structure includes one
Long side and a short side perpendicular to the long side, the horizontal edge, short side are in the both sides of long side, and the horizontal edge and the long side
It is parallel；Wherein, the short side of T-shaped structure passes through the PIN diode and another slotted metal in a slotted metal T-shaped structure
The short side of T-shaped structure draws a straight line in T-shaped structure, the horizontal edge and metal unit square of two slotted metal T-shaped structures
The parallel side of two of which is parallel；
Described two metal fine structures are located between the long side of described two slotted metal T-shaped structures, are separately positioned on
On the parallel side of metal unit square two other；
Where PIN diode on the direction of straight line, be connected by varactor between adjacent metal unit, i.e. two phases
The midpoint of the horizontal edge of slotted metal T-shaped structure close to each other is connected by varactor in adjacent metal unit；
In the rectilinear direction of straight line where PIN diode, two slotted metal T-shaped structures of adjacent metal unit
Horizontal edge, long side correspond to be connected；
In the first metal periodic array, the second metal periodic array, all PIN diode loading directions are unanimously and simultaneously
Connection connection, independently applies forward bias voltage by the long side of each T-shaped structure；All varactor loading directions it is consistent and
It is connected in parallel, reverse bias voltage is independently applied by the horizontal edge of slotted metal T-shaped structure；
The first metal periodic array and the second orthogonal thereto arrangement of metal periodic array.
The invention also discloses the control methods that a kind of improved multifunctional active frequencies select surface, including with
Lower step：
It is operated in dual polarization band logical state if necessary to improved multifunctional active frequencies selection surface, then in medium substrate
It is not loaded with forward dc bias voltage on PIN diode on the downside of the PIN diode of upside, medium substrate；
It is operated in dual polarization masked state if necessary to improved multifunctional active frequencies selection surface, then in medium substrate
Forward dc bias voltage is loaded on PIN diode on the downside of the PIN diode of upside, medium substrate；
It is operated in TE polarized waves if necessary to improved multifunctional active frequencies selection surface and selects state, then in medium base
PIN diode on the upside of bottom loads forward dc bias voltage, is not loaded with forward direction directly on the PIN diode on the downside of medium substrate
Flow bias voltage；
It is operated in TM polarized waves if necessary to improved multifunctional active frequencies selection surface and selects state, then in medium base
It is straight that forward dc bias voltage, the PIN diode load forward direction on the downside of medium substrate are not loaded on PIN diode on the upside of bottom
Flow bias voltage.
The control method on surface is selected further to optimize as a kind of improved multifunctional active frequencies of the utility model
Scheme includes the following steps：
When improved multifunctional active frequencies selection surface is in dual polarization band logical state, by controlling in medium substrate
The additional reversed direct current biasing of the varactor of side changes the passband working frequency of TM polarized waves or by controlling medium substrate
The additional reversed direct current biasing of the varactor of downside changes the passband working frequency of TE polarized waves；
When improved multifunctional active frequencies selection surface is in dual polarization masked state, by controlling in medium substrate
The additional reversed direct current biasing of the varactor of side changes the stopband working frequency of TM polarized waves or by controlling medium substrate
The additional reversed direct current biasing of the varactor of downside changes the stopband working frequency of TE polarized waves；
When improved multifunctional active frequencies selection surface, which is in TE polarized waves, selects state, by controlling medium substrate
Upside or medium substrate on the downside of the additional reversed direct current biasing of varactor change the stopband working frequencies of TM polarized waves
With the passband working frequency of TE polarized waves；
When improved multifunctional active frequencies selection surface, which is in TM polarized waves, selects state, by controlling medium substrate
Upside or medium substrate on the downside of the additional reversed direct current biasing of varactor change the passband working frequencies of TM polarized waves
With the stopband working frequency of TE polarized waves.
The utility model has the following technical effects using above technical scheme is compared with the prior art：
1. three kinds of electromagnetic switch, Polarization selection and frequency tuning different function solenoids are integrated in one, the device junction
Structure is simple, and stability is preferable, can effectively reduce processing cost, overall weight and size.
2. the feed system of PIN diode and varactor is mutual indepedent so that different functions can be grasped independently
Control.By manipulating the additional forward dc biasing of upper layer and lower layer PIN diode, the independent working condition for changing PIN diode, energy
It is enough to realize two kinds of functions of electromagnetic switch and Polarization selection at a certain fixed working frequency points, including dual polarization band logical, dual polarization screen
It covers, the selection of TE polarized waves and TM polarized waves select four kinds of different states；By manipulating the additional of upper layer and lower layer varactor
Reversed direct current biasing, the independent working condition for changing varactor, can change the working frequency of device under different conditions.
Description of the drawings
Fig. 1 is the structural side view on the utility model improved multifunctional active frequencies selection surface；
Fig. 2（a）, Fig. 2（b）It is the first metal week respectively in the utility model improved multifunctional active frequencies selection surface
The structural schematic diagram of phase array, the second metal periodic array kind metal unit；
Fig. 3（a）, Fig. 3（b）, Fig. 3（c）, Fig. 3（d）It is the utility model improved multifunctional active frequencies selection table respectively
Face is in the case where dual polarization band logical, dual polarization shielding, the selection of TE polarized waves, TM polarized waves select four kinds of different working conditions into line frequency
The transmission coefficient result schematic diagram of tuning.
In figure：1- medium substrates, 2- the first metal periodic arrays, 3- the second metal periodic arrays, A1- the first metal periods
A metal fine structure of metal unit in array, another metal of metal unit is thin in A2- the first metal periodic arrays
Cable architecture, the T-shaped structure in B11- the first metal periodic arrays in a slotted metal T-shaped structure of metal unit, B12-
Horizontal edge in one metal periodic array in a slotted metal T-shaped structure of metal unit, in B21- the first metal periodic arrays
T-shaped structure in another slotted metal T-shaped structure of metal unit, metal unit is another in B22- the first metal periodic arrays
Horizontal edge in one slotted metal T-shaped structure, the PIN diode loaded in metal unit in C1- the first metal periodic arrays,
The varactor loaded between metal unit in D1- the first metal periodic arrays, metal in D2- the first metal periodic arrays
Another varactor loaded between unit, a metal fine structure of metal unit in A3- the second metal periodic arrays,
Another metal fine structure of metal unit in A4- the second metal periodic arrays, metal in B31- the first metal periodic arrays
T-shaped structure in one slotted metal T-shaped structure of unit, a metal of metal unit in B32- the first metal periodic arrays
Horizontal edge in T-shaped structure of slotting, in B41- the first metal periodic arrays in another slotted metal T-shaped structure of metal unit
T-shaped structure, the horizontal edge in B42- the first metal periodic arrays in another slotted metal T-shaped structure of metal unit, C2- second
The PIN diode loaded in metal unit in metal periodic array is loaded between metal unit in D3- the second metal periodic arrays
One varactor, another varactor loaded between metal unit in D4- the second metal periodic arrays.
Specific implementation mode
Illustrate the purpose of this utility model, technical solution and advantage in order to be more clearly understood, below in conjunction with attached drawing and
The utility model is further described in embodiment.It should be appreciated that specific embodiment described herein is only used to explain
The utility model is not used to limit the utility model.In addition, institute in the various embodiments of the present invention described below
The technical characteristic being related to can be combined with each other as long as they do not conflict with each other.
As shown in Figure 1, Figure 2（a）And Fig. 2（b）Shown, the utility model discloses a kind of selections of improved multifunctional active frequencies
Surface, which is characterized in that exist including medium substrate, the first metal periodic array being arranged on the upside of medium substrate and setting
The second metal periodic array on the downside of medium substrate.
First metal periodic array, the second metal periodic array include that several are in the metal list that cyclic array is distributed
Member.
The square that metal unit is centrosymmetric, including two metal fine structures, two slotted metal T-shaped structures and
One PIN diode；Two slotted metal T-shaped structures include a horizontal edge and a T-shaped structure, and T-shaped structure includes one
Long side and a short side perpendicular to the long side, horizontal edge, short side are in the both sides of long side, and horizontal edge is parallel with long side；Wherein, one
The short side of T-shaped structure passes through T-shaped structure in PIN diode and another slotted metal T-shaped structure in slotted metal T-shaped structure
Short side draws a straight line, and the side that the horizontal edge of two slotted metal T-shaped structures is parallel with metal unit square two of which is flat
Row；Two metal fine structures are located between the long side of two slotted metal T-shaped structures, are separately positioned on metal unit square
On the parallel side of two other.
Where PIN diode on the direction of straight line, be connected by varactor between adjacent metal unit, i.e. two phases
The midpoint of the horizontal edge of slotted metal T-shaped structure close to each other is connected by varactor in adjacent metal unit.
In the rectilinear direction of straight line where PIN diode, two slotted metal T-shaped structures of adjacent metal unit
Horizontal edge, long side correspond to be connected.
In first metal periodic array, the second metal periodic array, all PIN diode loading directions are consistent and parallel connection connects
It connects, forward bias voltage is independently applied by the long side of each T-shaped structure；All varactor loading directions are consistent and in parallel
Connection, independently applies reverse bias voltage by the horizontal edge of slotted metal T-shaped structure.
First metal periodic array and the second orthogonal thereto arrangement of metal periodic array.
In the utility model, the feed system for adopting PIN diode and varactor is mutual indepedent so that different functions
It can be by independent operation.It is independent to change PIN diode by manipulating the additional forward dc biasing of upper layer and lower layer PIN diode
Working condition, can realize two kinds of functions of electromagnetic switch and Polarization selection at a certain fixed working frequency points, including dual polarization
Band logical, dual polarization shielding, the selection of TE polarized waves and TM polarized waves select four kinds of different states；By manipulating upper layer and lower layer transfiguration
The additional reversed direct current biasing of diode, the independent working condition for changing varactor, can change device under different conditions
Working frequency, three kinds of electromagnetic switch, Polarization selection and frequency tuning different function solenoids are integrated in one, the device junction
Structure is simple, and stability is preferable, can effectively reduce processing cost, overall weight and size.
The specific working frequency range in surface, the material of medium substrate 1 is selected to may be selected according to improved multifunctional active frequencies
Polytetrafluoroethylene (PTFE), epoxy resin etc., the metal that good conductivity may be selected in structural metallic materials, property is stablized, such as copper, gold and aluminium
Deng varactor, PIN diode etc. may be selected in semiconductor element.
To make those skilled in the art more fully understand the utility model, with reference to specific embodiment to the utility model
Multifunctional active frequency-selective surfaces be described in detail.
In the present embodiment, improved multifunctional active frequencies selection surface is operated in microwave band, and medium substrate uses
F4B polytetrafluoroethylene (PTFE) high-frequency microwave plates, thickness are 0.8 mm, and 16 ' are made in medium substrate using standard PCB processing technologys
16 metal periodic array, total size are 300 ' 300 mm2, metal structure thickness is using the copper of 35 μ m thicks, semiconductor
Element uses the low-power consumption PIN diode of SOT-23 encapsulation, the varactor encapsulated using SC-79.
The control method that surface is selected based on the improved multifunctional active frequencies, is comprised the steps of：
The additional forward dc biasing for manipulating upper layer and lower layer PIN diode, independently changes the working condition of PIN diode,
It can realize two kinds of functions of electromagnetic switch and Polarization selection at a certain fixed working frequency points, including dual polarization band logical, dual polarization
Shielding, the selection of TE polarized waves and TM polarized waves select four kinds of different states, i.e., if necessary to improved multifunctional active frequencies
Selection surface is operated in dual polarization band logical state, then the PIN diode on the upside of medium substrate, the PIN bis- on the downside of medium substrate
Forward dc bias voltage is not loaded in pole pipe；It is operated in if necessary to improved multifunctional active frequencies selection surface bipolar
Change masked state, then the PIN diode on the upside of medium substrate, load is positive straight on the PIN diode on the downside of medium substrate
Flow bias voltage；It is operated in TE polarized waves if necessary to improved multifunctional active frequencies selection surface and selects state, is then being situated between
PIN diode on the upside of matter substrate loads forward dc bias voltage, is not loaded with just on the PIN diode on the downside of medium substrate
To DC offset voltage；It is operated in TM polarized waves if necessary to improved multifunctional active frequencies selection surface and selects state, then
Forward dc bias voltage is not loaded on the PIN diode on the upside of medium substrate, the PIN diode on the downside of medium substrate adds
Carry forward dc bias voltage.The additional reversed direct current biasing of upper layer and lower layer varactor is manipulated, it is independent to change two pole of transfiguration
The working condition of pipe can change the working frequency of device under different conditions, i.e., when being in dual polarization band logical state, pass through control
The additional reversed direct current biasing of upper layer and lower layer varactor processed can continuously change the logical of TE polarized waves and TM polarized waves respectively
Band working frequency；It is inclined by the additional reversed direct current for controlling upper layer and lower layer varactor when being in dual polarization masked state
It sets, can continuously change the stopband working frequency of TE polarized waves and TM polarized waves respectively；When being in TE polarized waves selection state,
By controlling the additional reversed direct current biasing of upper layer and lower layer varactor, it can continuously change the stopband work of TM polarized waves respectively
The passband working frequency of working frequency and TE polarized waves；When being in TM polarized waves selection state, passes through and control upper layer and lower layer transfiguration
The additional reversed direct current biasing of diode can continuously change the resistance of the passband working frequency and TE polarized waves of TM polarized waves respectively
Band working frequency.
Fig. 3（a）To Fig. 3（d）Improved multifunctional active frequencies selection surface is given respectively in dual polarization band logical, bipolar
Change shielding, the selection of TE polarized waves and TM polarized waves to select to carry out the transmission coefficient knot of frequency tuning under four kinds of different working conditions
Fruit.Wherein：
（a）Frequency tuning function of the surface under dual polarization band logical state is selected for improved multifunctional active frequencies；
（b）Frequency tuning function of the surface under dual polarization masked state is selected for improved multifunctional active frequencies；
（c）Frequency tuning function of the surface under TE polarized wave selection states is selected for improved multifunctional active frequencies；
（d）Frequency tuning function of the surface under TM polarized wave selection states is selected for improved multifunctional active frequencies.
When upper layer and lower layer PIN diode is all closed, improved multifunctional active frequencies selection surface is in dual polarization band
Logical state can continuously change TE polarized waves respectively by controlling the additional reversed direct current biasing of upper layer and lower layer varactor
With the passband working frequency of TM polarized waves；When upper layer and lower layer PIN diode is all opened, the selection of improved multifunctional active frequencies
When surface is in dual polarization masked state, by controlling the additional reversed direct current biasing of upper layer and lower layer varactor, Neng Goufen
The stopband working frequency of TE polarized waves and TM polarized waves is not changed not continuously；When upper layer PIN diode is opened and lower layer's PIN diode
When closing, when improved multifunctional active frequencies selection surface is in TE polarized waves selection state, become by controlling upper layer and lower layer
Hold the additional reversed direct current biasing of diode, the stopband working frequency and TE polarized waves for continuously changing TM polarized waves can be distinguished
Passband working frequency；When upper layer PIN diode is closed and lower layer's PIN diode is opened, the choosing of improved multifunctional active frequencies
Select surface be in TM polarized waves selection state when, pass through control upper layer and lower layer varactor additional reversed direct current biasing, energy
The stopband working frequency of enough passband working frequencies and TE polarized waves for changing TM polarized waves continuous respectively.
The result shows that selecting the outer of surface levels PIN diode by independent control improved multifunctional active frequencies
Add forward dc to bias, can realize two kinds of functions of electromagnetic switch and Polarization selection, realize dual polarization band logical, dual polarization shielding,
TE polarized waves select and TM polarized waves select four kinds of electromagnetic states；When improved multifunctional active frequencies selection surface be in it is above
In a kind of electromagnetic states, passes through independent control improved multifunctional active frequencies and select the additional of surface levels varactor
Reversed direct current biasing can realize frequency tuning function, be tuned to the working frequency of the state.It is new that this embodies this practicality
The improved multifunctional active frequencies selection surface of type has functional diversity and state adjustability, and the device architecture is simple,
Stability is preferable, can effectively reduce processing cost, overall weight and size.
The above is only the preferred embodiment of the utility model, is not intended to limit the utility model.It should be understood that：
It is all that any improvements and modifications are made within the spirit of the present invention and principle, it is regarded as the scope of protection of the utility model
Within.
Claims (1)
1. a kind of improved multifunctional active frequencies select surface, which is characterized in that including medium substrate, be arranged in medium substrate
First metal periodic array of upside and the second metal periodic array being arranged on the downside of medium substrate；
The first metal periodic array, the second metal periodic array include that several are in the metal list that cyclic array is distributed
Member；
The square that the metal unit is centrosymmetric, including two metal fine structures, two slotted metal T-shaped structures and
One PIN diode；
Described two slotted metal T-shaped structures include a horizontal edge and a T-shaped structure, and the T-shaped structure includes one long
Side and a short side perpendicular to the long side, the horizontal edge, short side are in the both sides of long side, and the horizontal edge and the long side are flat
Row；Wherein, the short side of T-shaped structure passes through the PIN diode and another slotted metal T in a slotted metal T-shaped structure
The short side of T-shaped structure draws a straight line in shape structure, horizontal edge and the metal unit squares of two slotted metal T-shaped structures its
In two parallel sides it is parallel；
Described two metal fine structures are located between the long side of described two slotted metal T-shaped structures, are separately positioned on metal
On the parallel side of unit square two other；
Where PIN diode on the direction of straight line, be connected by varactor between adjacent metal unit, i.e. two adjacent gold
The midpoint for belonging to the horizontal edge of slotted metal T-shaped structure close to each other in unit is connected by varactor；
In the rectilinear direction of straight line where PIN diode, the cross of two slotted metal T-shaped structures of adjacent metal unit
Side, long side, which correspond to, to be connected；
In the first metal periodic array, the second metal periodic array, all PIN diode loading directions are consistent and parallel connection connects
It connects, forward bias voltage is independently applied by the long side of each T-shaped structure；All varactor loading directions are consistent and in parallel
Connection, independently applies reverse bias voltage by the horizontal edge of slotted metal T-shaped structure；
The first metal periodic array and the second orthogonal thereto arrangement of metal periodic array.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321546A (en) * | 2018-01-18 | 2018-07-24 | 南京航空航天大学 | A kind of improved multifunctional active frequencies selection surface and its control method |
| CN109273860A (en) * | 2018-10-18 | 2019-01-25 | 哈尔滨工业大学 | Transmission line type broadband active frequency-selective surfaces |
| CN109451718A (en) * | 2018-12-04 | 2019-03-08 | 中国人民解放军国防科技大学 | Ultra-wideband energy selection surface |
| CN113224542A (en) * | 2021-04-25 | 2021-08-06 | 南京理工大学 | Dual-polarization broadband multifunctional active wave absorbing/reflecting device |
| CN114374097A (en) * | 2022-01-26 | 2022-04-19 | 西安电子科技大学 | Broadband, multifrequency and frequency conversion antenna coating |
-
2018
- 2018-01-18 CN CN201820080137.6U patent/CN207947381U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321546A (en) * | 2018-01-18 | 2018-07-24 | 南京航空航天大学 | A kind of improved multifunctional active frequencies selection surface and its control method |
| CN109273860A (en) * | 2018-10-18 | 2019-01-25 | 哈尔滨工业大学 | Transmission line type broadband active frequency-selective surfaces |
| CN109273860B (en) * | 2018-10-18 | 2020-11-13 | 哈尔滨工业大学 | Transmission line type broadband active frequency selective surface |
| CN109451718A (en) * | 2018-12-04 | 2019-03-08 | 中国人民解放军国防科技大学 | Ultra-wideband energy selection surface |
| CN113224542A (en) * | 2021-04-25 | 2021-08-06 | 南京理工大学 | Dual-polarization broadband multifunctional active wave absorbing/reflecting device |
| CN113224542B (en) * | 2021-04-25 | 2022-10-21 | 南京理工大学 | Dual-polarization broadband multifunctional active wave absorbing/reflecting device |
| CN114374097A (en) * | 2022-01-26 | 2022-04-19 | 西安电子科技大学 | Broadband, multifrequency and frequency conversion antenna coating |
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Granted publication date: 20181009 Termination date: 20210118 |