CN206322851U - A kind of parallelly feeding type multifunctional active frequency-selective surfaces - Google Patents
A kind of parallelly feeding type multifunctional active frequency-selective surfaces Download PDFInfo
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- CN206322851U CN206322851U CN201621474220.9U CN201621474220U CN206322851U CN 206322851 U CN206322851 U CN 206322851U CN 201621474220 U CN201621474220 U CN 201621474220U CN 206322851 U CN206322851 U CN 206322851U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 162
- 230000000737 periodic effect Effects 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 125000004122 cyclic group Chemical group 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 230000010287 polarization Effects 0.000 description 20
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 238000012913 prioritisation Methods 0.000 description 3
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- 230000005540 biological transmission Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model discloses a kind of parallelly feeding type multifunctional active frequency-selective surfaces, comprising medium substrate and Orthogonally arrangement medium substrate both sides metal periodic array；Metal periodic array includes the metal unit that several are in periodic arrangement；Metal unit is square, comprising two metal fine structures, two metal T-type structures and diode, wherein, two metal fine parallelism structurals are set, and the horizontal edge of two metal T-type structures is be arranged in parallel, and vertical edge is drawn a straight line by diode.In metal periodic array, diode is in opposite direction in the adjacent metal unit of same row, and the direction of diode is identical in the metal unit of same row.The metal periodic array loading varactor of media side, the metal periodic array loading PIN diode of opposite side.The utility model integrates frequency tuning and electromagnetic switch function, more can actively manipulate electromagnetic wave, there is important application prospect in terms of electromagnetism stealth, electromagnetic compatibility.
Description
Technical field
The utility model is related to electromagnetism Meta Materials technical field, more particularly to a kind of parallelly feeding type multifunctional active frequency
Select surface.
Background technology
Traditional frequency-selective surfaces are made up of the metal patch or gap of periodic arrangement, with good space filtering
Characteristic.
After the process, its electromagnetic performance is just substantially stationary, it is impossible to become again with external environment condition on passive frequencies selection surface
Change and change.Active frequencies selection surface can be by changing extrinsic motivated（Such as voltage swing, electric-field intensity and luminous intensity）
Actively to change the electromagnetic performance of frequency-selective surfaces.Automatically controlled active frequencies selection surface can be by loading active device（Such as
PIN diode, varactor etc.）To realize the electromagnetic property of restructural, in order to control the state of these active devices, generally
Need to add feeder system inside active frequencies selection surface array.However, extra feeder line can greatly influence active frequency
Rate selects the electromagnetic property on surface（Such as frequency shift (FS), Insertion Loss increase and spurious signal response）, while manufacture difficulty can be increased
And cost of manufacture.The topological structure on surface is selected by rationally designing active frequencies, using metal periodic structure in itself as feeder line,
The feeder line that active frequencies select surface array built-in redundancy can be removed, greatly reduces the negative effect that feed system is brought.
Active device generally has two kinds of feed forms of Series FPB and parallel FPB.Tandem type feed is simultaneously to the active device of a row
Part is fed, and its applying bias voltage value can increase with the increase of active device quantity, more seriously, when some has
When source device failure does not work, the active device of an entire row where it just all cisco unity malfunction, so as to influence whole active frequency
Rate selects the electromagnetic property on surface.Therefore, it is necessary to study and design the parallelly feeding form of active device.
Although in addition, active frequencies selection surface can meet the demand of practical application to a certain extent, due to it
Unitary function, can not many times meet functional diversity and state adjustability of the external complex electromagnetic environment to electronic equipment
Deng requirement.Surface is selected with multi-functional active frequencies therefore, it is necessary to study, is electromagnetism stealth, electromagnetic compatibility and can weigh
The design of structure device provides important technical support, is worth with important military and civilian.
Utility model content
Technical problem to be solved in the utility model be directed to defect involved in background technology there is provided it is a kind of simultaneously
Join feeding type multifunctional active frequency-selective surfaces, can effectively solve that existing active frequencies selection function of surface is single, feeder line is superfluous
Remaining the problems such as.
The utility model uses following technical scheme to solve above-mentioned technical problem：
A kind of parallelly feeding type multifunctional active frequency-selective surfaces, including medium substrate, be arranged on the upside of medium substrate
The first metal periodic array and the second metal periodic array for being arranged on the downside of medium substrate；
The first metal periodic array includes the first metal unit that several are in cyclic array distribution；
First metal unit is square, includes two metal fine structures, two metal T-type structures and a change
Hold diode, wherein, described two metal fine parallelism structurals are arranged on two sides of the first metal unit square；It is described
Two metal T-type structures include a horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint, and two metals are T-shaped
The horizontal edge of structure is set in parallel on the two other side of the first metal unit square, and the vertical edge of two metal T-type structures
Drawn a straight line by the varactor；
The first adjacent metal unit correspondence is connected in the first metal periodic array, and adjacent first gold medal of same row
Belong to unit in varactor direction on the contrary, the direction of varactor is identical in the first metal unit of same row；
The second metal periodic array includes the second metal unit that several are in cyclic array distribution；
Second metal unit is square, includes two metal fine structures, two metal T-type structures and one
PIN diode, wherein, described two metal fine parallelism structurals are arranged on two sides of the second metal unit square；Institute
State two metal T-type structures and include a horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint, two metal T
The horizontal edge of type structure is set in parallel on the two other side of the second metal unit square, and two metal T-type structures is perpendicular
While being drawn a straight line by the PIN diode；
The second adjacent metal unit correspondence is connected in the second metal periodic array, and adjacent second gold medal of same row
Belong to unit in PIN diode direction on the contrary, the direction of PIN diode is identical in the second metal unit of same row；
The orthogonal thereto arrangement of metal periodic array on the downside of metal periodic array and medium substrate on the upside of the medium substrate.
It is used as a kind of further prioritization scheme of parallelly feeding type multifunctional active frequency-selective surfaces of the utility model, institute
State medium substrate and use F4BME polytetrafluoroethylene (PTFE) high-frequency microwave plates.
It is used as a kind of further prioritization scheme of parallelly feeding type multifunctional active frequency-selective surfaces of the utility model, institute
State the copper that the first metal unit, the second metal unit use 35 μ m thicks.
It is used as a kind of further prioritization scheme of parallelly feeding type multifunctional active frequency-selective surfaces of the utility model, institute
State the varactor that varactor uses SC-79 to encapsulate, the PIN diode of PIN diode SOT-23 encapsulation.
The invention also discloses a kind of controlling party based on the parallelly feeding type multifunctional active frequency-selective surfaces
Method, is comprised the steps of：
Reverse parallel connection bias voltage is loaded on each varactor in the first metal periodic array on the upside of medium substrate,
Positive parallel offset voltage is loaded on each PIN diode in the second metal periodic array on the downside of medium substrate；
The frequency tuning function under TM polarization is realized if necessary to parallelly feeding type multifunctional active frequency-selective surfaces, then
Adjust the reverse parallel connection bias voltage of varactor in the first metal periodic array on the upside of medium substrate；If necessary to increase simultaneously
Join the working frequency of feeding type multifunctional active frequency-selective surfaces, then reduce on the upside of medium substrate in the first metal periodic array
The reverse parallel connection bias voltage of varactor, if necessary to reduce the work of parallelly feeding type multifunctional active frequency-selective surfaces
Working frequency, then increase the reverse parallel connection bias voltage of varactor in the first metal periodic array on the upside of medium substrate；
The electromagnetic switch function under TE polarization is realized if necessary to parallelly feeding type multifunctional active frequency-selective surfaces, then
Adjust the positive parallel offset voltage of PIN diode in the second metal periodic array on the downside of medium substrate；If necessary to feedback in parallel
Electric type multifunctional active frequency-selective surfaces realize that the electromagnetism under TE polarization closes function, then adjust the second metal on the downside of medium substrate
The positive parallel offset voltage of periodic array so that all PIN diodes are in the conduction state, if necessary to parallelly feeding type
Multifunctional active frequency-selective surfaces realize that the electromagnetism under TE polarization opens function, then adjust the second metal cycle on the downside of medium substrate
The positive parallel offset voltage of array so that all PIN diodes are off.
The utility model uses above technical scheme compared with prior art, with following technique effect：
1. parallelly feeding scheme is designed, to applying reverse parallel connection per a line varactor in the first metal periodic array
Bias voltage, applies positive parallel offset voltage to each row PIN diode in the second metal periodic array, can effectively subtract
Applying bias voltage value in small array needed for semiconductor element work, improves the stability and reliability of array electromagnetic property.
2. two T-shaped metal structures are connected as resonance structure by diode, the redundancy inside array is effectively reduced
Feeder line, reduces negative effect of the feed system to array electromagnetic property.
3. by controlling upper strata reverse parallel connection bias voltage, change the working condition of upper strata varactor, can realize
Frequency tuning function of the parallelly feeding type multifunctional active frequency-selective surfaces under TM polarization, by controlling lower floor positive in parallel
Bias voltage, changes the on off operating mode of lower floor's PIN diode, can realize parallelly feeding type multifunctional active frequency-selective surfaces
Electromagnetic switch function under TE polarization, the device architecture is simple, it is easy to process, stability is preferable.
Brief description of the drawings
Fig. 1 is the structural representation of parallelly feeding type multifunctional active frequency-selective surfaces；
Fig. 2（a）, Fig. 2（b）It is the first metal unit, in parallelly feeding type multifunctional active frequency-selective surfaces respectively
The structural representation of two metal units；
Fig. 3 is the array structure schematic diagram of parallelly feeding type multifunctional active frequency-selective surfaces；
Fig. 4（a）, Fig. 4（b）It is that frequency of the parallelly feeding type multifunctional active frequency-selective surfaces under TM polarization is adjusted respectively
The transmission coefficient result figure of humorous function and the electromagnetic switch function under TE polarization.
In figure：1- medium substrates, 2- the first metal periodic arrays, 3- the second metal periodic arrays, the metal units of A1- first
A metal fine structure, another metal fine structure of the metal units of A2- first, the metal T of the metal units of B1- first
Type structure, C1- varactors, a metal fine structure of the metal units of A3- second, the metal units of A4- second it is another
Individual metal fine structure, the metal T-type structure of the metal units of B2- second, C2- PIN diodes, the metal units of D1- first, D2-
Second metal unit, E1- upper stratas just connect feeder line, E2- upper stratas earth connection, and E3- lower floors just connect feeder line, E4- lower floors earth connection,
F1- upper stratas are every the straight radio frequency inductive of traffic, and F2- lower floors are every the straight radio frequency inductive of traffic.
Embodiment
The technical solution of the utility model is described in further detail below in conjunction with the accompanying drawings：
As depicted in figs. 1 and 2, the utility model discloses a kind of parallelly feeding type multifunctional active frequency-selective surfaces,
Including medium substrate, the first metal periodic array being arranged on the upside of medium substrate and be arranged on the downside of medium substrate
Two metal periodic arrays.
The first metal periodic array includes the first metal unit that several are in cyclic array distribution；Described first
Metal unit is square, comprising two metal fine structures, two metal T-type structures and a varactor, wherein, institute
Two metal fine parallelism structurals are stated to be arranged on two sides of the first metal unit square；Described two metal T-type structures
A horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint are included, the horizontal edge of two metal T-type structures is parallel
On the two other side for being arranged on the first metal unit square, and the vertical edge of two metal T-type structures passes through the transfiguration two
Pole pipe draws a straight line；The first adjacent metal unit correspondence is connected in the first metal periodic array, and same row
In adjacent first metal unit varactor direction on the contrary, in the first metal unit of same row varactor direction
It is identical.
The second metal periodic array includes the second metal unit that several are in cyclic array distribution；Described second
Metal unit is square, comprising two metal fine structures, two metal T-type structures and a PIN diode, wherein, institute
Two metal fine parallelism structurals are stated to be arranged on two sides of the second metal unit square；Described two metal T-type structures
A horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint are included, the horizontal edge of two metal T-type structures is parallel
On the two other side for being arranged on the second metal unit square, and the vertical edge of two metal T-type structures passes through the poles of PIN bis-
Pipe draws a straight line；The second adjacent metal unit correspondence is connected in the second metal periodic array, and the phase of same row
In adjacent second metal unit PIN diode direction on the contrary, in the second metal unit of same row PIN diode direction phase
Together.
The orthogonal thereto arrangement of metal periodic array on the downside of metal periodic array and medium substrate on the upside of the medium substrate.
As shown in figure 3, the utility model can also include external dc offset line.External dc offset line is included outside upper strata
Plus direct current biasing line and lower floor's external dc offset line, upper strata external dc offset line is just connecing feeder line including upper strata and upper strata is grounded
Feeder line, lower floor's external dc offset line is just connecing feeder line and lower floor's earth connection including lower floor, and parallelly feeding type multifunctional active is frequently
Also include between the first metal periodic array and upper strata external dc offset line on rate selection surface every the straight radio frequency inductive of traffic,
Also include between the lower arrays and lower floor's external dc offset line of parallelly feeding type multifunctional active frequency-selective surfaces every friendship
Logical straight radio frequency inductive.
In the utility model, using parallelly feeding scheme, to being applied in the metal periodic array of upper strata per a line varactor
Plus reverse parallel connection bias voltage, apply positive parallel offset voltage to each row PIN diode in lower metal periodic array,
The applying bias voltage value needed for semiconductor element work in array can be effectively reduced, the stability of array electromagnetic property is improved
And reliability.
Two T-shaped metal structures are connected by the utility model as resonance structure by diode, are effectively reduced in array
The redundant feeder in portion, reduces negative effect of the feed system to array electromagnetic property.By controlling upper strata reverse parallel connection biased electrical
Pressure, changes the junction capacity of upper strata varactor, parallelly feeding type multifunctional active frequency-selective surfaces can be realized in TM poles
Frequency tuning function under changing, by controlling the positive parallel offset voltage of lower floor, changes the on off operating mode of lower floor's PIN diode,
Electromagnetic switch function of the parallelly feeding type multifunctional active frequency-selective surfaces under TE polarization can be realized.
According to the specific working frequency range of parallelly feeding type multifunctional active frequency-selective surfaces, the material of medium substrate 1 can
Polytetrafluoroethylene (PTFE), epoxy resin etc. are selected, good conductivity, metal stable in properties, such as copper, Jin He may be selected in structural metallic materials
Varactor, PIN diode etc. may be selected in aluminium etc., semiconductor element.
In the present embodiment, parallelly feeding type multifunctional active frequency-selective surfaces are operated in microwave band, medium substrate
Using F4BME polytetrafluoroethylene (PTFE) high-frequency microwave plates, thickness is 0.8 mm, and metal structure thickness uses the copper of 35 μ m thicks, partly led
Volume elements part using SC-79 encapsulate varactor, SOT-23 encapsulation PIN diode and 0603 encapsulation every traffic direct projection frequently
Inductance.
In the present embodiment, using parallelly feeding scheme, the varactor in the metal array of upper strata with a line loading is same
To parallel connection, the varactor of adjacent lines loading reversely, by controlling upper strata reverse parallel connection bias voltage, changes upper strata transfiguration two
The junction capacity of pole pipe, can realize frequency tuning work(of the parallelly feeding type multifunctional active frequency-selective surfaces under TM polarization
Can, the PIN diode that same row is loaded in lower metal array is in parallel in the same direction, and the PIN diode of adjacent column loading reversely passes through
The positive parallel offset voltage of lower floor is controlled, changes the on off operating mode of lower floor's PIN diode, can realize that parallelly feeding type is multi-functional
Active frequencies select electromagnetic switch function of the surface under TE polarization.
Based on the control method of the parallelly feeding type multifunctional active frequency-selective surfaces, comprise the steps of：
Reverse parallel connection bias voltage is loaded on each varactor in the first metal periodic array on the upside of medium substrate,
Positive parallel offset voltage is loaded on each PIN diode in the second metal periodic array on the downside of medium substrate；
The frequency tuning function under TM polarization is realized if necessary to parallelly feeding type multifunctional active frequency-selective surfaces, then
Adjust the reverse parallel connection bias voltage of varactor in the first metal periodic array on the upside of medium substrate；If necessary to increase simultaneously
Join the working frequency of feeding type multifunctional active frequency-selective surfaces, then reduce on the upside of medium substrate in the first metal periodic array
The reverse parallel connection bias voltage of varactor, if necessary to reduce the work of parallelly feeding type multifunctional active frequency-selective surfaces
Working frequency, then increase the reverse parallel connection bias voltage of varactor in the first metal periodic array on the upside of medium substrate；
The electromagnetic switch function under TE polarization is realized if necessary to parallelly feeding type multifunctional active frequency-selective surfaces, then
Adjust the positive parallel offset voltage of PIN diode in the second metal periodic array on the downside of medium substrate；If necessary to feedback in parallel
Electric type multifunctional active frequency-selective surfaces realize that the electromagnetism under TE polarization closes function, then adjust the second metal on the downside of medium substrate
The positive parallel offset voltage of periodic array so that all PIN diodes are in the conduction state, if necessary to parallelly feeding type
Multifunctional active frequency-selective surfaces realize that the electromagnetism under TE polarization opens function, then adjust the second metal cycle on the downside of medium substrate
The positive parallel offset voltage of array so that all PIN diodes are off.
Fig. 4 gives frequency tuning function of the parallelly feeding type multifunctional active frequency-selective surfaces respectively under TM polarization
The transmission coefficient result of electromagnetic switch function under being polarized with TE.Wherein：
（a）For frequency tuning function of the parallelly feeding type multifunctional active frequency-selective surfaces under TM polarization；
（b）For electromagnetic switch function of the parallelly feeding type multifunctional active frequency-selective surfaces under TE polarization.
When the reverse parallel connection bias voltage that upper strata feeder line applies reduces, the junction capacity increase of varactor, parallel connection feedback
Resonant frequency of the electric type multifunctional active frequency-selective surfaces under TM polarization reduces；When lower floor's feeder line does not apply applied bias electricity
During pressure, PIN diode is operated in off-state, and parallelly feeding type multifunctional active frequency-selective surfaces polarize in 3 GHz to TE
Bandpass characteristics is presented, when lower floor's feeder line applies applying bias voltage, PIN diode is operated in conducting state, parallelly feeding type
Band-stop response, the choosing of parallelly feeding type multifunctional active frequency are presented to TE polarization in 3 GHz for multifunctional active frequency-selective surfaces
Select surface band logical state and with resistance state 3 GHz isolation be more than 24 dB.
As a result show, pass through the additional of independent control parallelly feeding type multifunctional active frequency-selective surfaces levels array
Direct current biasing state, can change its electromagnetic states, realize different functions, and this embodies parallelly feeding type of the present utility model
Multifunctional active frequency-selective surfaces have a functional diversity and state adjustability, and flexible design, conveniently.
Those skilled in the art of the present technique are it is understood that unless otherwise defined, all terms used herein（Including skill
Art term and scientific terminology）With the general understanding identical meaning with the those of ordinary skill in the utility model art
Justice.It should also be understood that those terms defined in such as general dictionary should be understood that with upper with prior art
The consistent meaning of meaning hereinafter, and unless defined as here, will not with idealization or excessively formal implication come
Explain.
Above-described embodiment, is entered to the purpose of this utility model, technical scheme and beneficial effect
One step is described in detail, be should be understood that and be the foregoing is only embodiment of the present utility model, is not used to limit
The utility model processed, all within spirit of the present utility model and principle, any modifications, equivalent substitutions and improvements done etc.,
It should be included within protection domain of the present utility model.
Claims (4)
1. a kind of parallelly feeding type multifunctional active frequency-selective surfaces, it is characterised in that including medium substrate, be arranged on medium
The first metal periodic array on the upside of substrate and the second metal periodic array being arranged on the downside of medium substrate；
The first metal periodic array includes the first metal unit that several are in cyclic array distribution；
First metal unit is square, includes two metal fine structures, two metal T-type structures and a transfiguration two
Pole pipe, wherein, described two metal fine parallelism structurals are arranged on two sides of the first metal unit square；It is described two
Metal T-type structure includes a horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint, two metal T-type structures
Horizontal edge be set in parallel on the two other side of the first metal unit square, and the vertical edge of two metal T-type structures passes through
The varactor draws a straight line；
The first adjacent metal unit correspondence is connected in the first metal periodic array, and the adjacent first metal list of same row
Varactor direction the on the contrary, direction of varactor is identical in the first metal unit of same row in member；
The second metal periodic array includes the second metal unit that several are in cyclic array distribution；
Second metal unit is square, includes two metal fine structures, two metal T-type structures and a PIN bis-
Pole pipe, wherein, described two metal fine parallelism structurals are arranged on two sides of the second metal unit square；It is described two
Metal T-type structure includes a horizontal edge and a vertical edge being vertically set on the horizontal edge midpoint, two metal T-type structures
Horizontal edge be set in parallel on the two other side of the second metal unit square, and the vertical edge of two metal T-type structures passes through
The PIN diode draws a straight line；
The second adjacent metal unit correspondence is connected in the second metal periodic array, and the adjacent second metal list of same row
PIN diode direction the on the contrary, direction of PIN diode is identical in the second metal unit of same row in member；
The orthogonal thereto arrangement of metal periodic array on the downside of metal periodic array and medium substrate on the upside of the medium substrate.
2. parallelly feeding type multifunctional active frequency-selective surfaces according to claim 1, it is characterised in that the medium
Substrate uses F4BME polytetrafluoroethylene (PTFE) high-frequency microwave plates.
3. parallelly feeding type multifunctional active frequency-selective surfaces according to claim 1, it is characterised in that described first
Metal unit, the second metal unit use the copper of 35 μ m thicks.
4. parallelly feeding type multifunctional active frequency-selective surfaces according to claim 1, it is characterised in that the transfiguration
Diode uses the varactor that SC-79 is encapsulated, the PIN diode of PIN diode SOT-23 encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621474220.9U CN206322851U (en) | 2016-12-30 | 2016-12-30 | A kind of parallelly feeding type multifunctional active frequency-selective surfaces |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621474220.9U CN206322851U (en) | 2016-12-30 | 2016-12-30 | A kind of parallelly feeding type multifunctional active frequency-selective surfaces |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785467A (en) * | 2016-12-30 | 2017-05-31 | 南京航空航天大学 | A kind of parallelly feeding type multifunctional active frequency-selective surfaces and its control method |
| CN108321546A (en) * | 2018-01-18 | 2018-07-24 | 南京航空航天大学 | A kind of improved multifunctional active frequencies selection surface and its control method |
| CN108738290A (en) * | 2018-04-20 | 2018-11-02 | 西北工业大学 | A kind of Meta Materials wave absorbing device and design method |
| CN110048237A (en) * | 2019-05-05 | 2019-07-23 | 电子科技大学 | The adjustable X-band absorbing material of electricity |
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2016
- 2016-12-30 CN CN201621474220.9U patent/CN206322851U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785467A (en) * | 2016-12-30 | 2017-05-31 | 南京航空航天大学 | A kind of parallelly feeding type multifunctional active frequency-selective surfaces and its control method |
| CN106785467B (en) * | 2016-12-30 | 2023-09-26 | 南京航空航天大学 | Parallel feed type multifunctional active frequency selection surface and control method thereof |
| CN108321546A (en) * | 2018-01-18 | 2018-07-24 | 南京航空航天大学 | A kind of improved multifunctional active frequencies selection surface and its control method |
| CN108738290A (en) * | 2018-04-20 | 2018-11-02 | 西北工业大学 | A kind of Meta Materials wave absorbing device and design method |
| CN108738290B (en) * | 2018-04-20 | 2019-10-22 | 西北工业大学 | A kind of Meta Materials wave absorbing device and design method |
| CN110048237A (en) * | 2019-05-05 | 2019-07-23 | 电子科技大学 | The adjustable X-band absorbing material of electricity |
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