CN113337894A - 一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构及其制备方法 - Google Patents

一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构及其制备方法 Download PDF

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CN113337894A
CN113337894A CN202110557849.9A CN202110557849A CN113337894A CN 113337894 A CN113337894 A CN 113337894A CN 202110557849 A CN202110557849 A CN 202110557849A CN 113337894 A CN113337894 A CN 113337894A
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cerium
aluminum garnet
yttrium aluminum
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孔钒宇
滕召权
邵建达
晋云霞
曹红超
张益彬
王勇禄
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Abstract

一种在掺铈钇铝石榴石闪烁晶体表面使用反应离子束刻蚀的具有二维周期阵列的蛾眼式微结构,微结构参数包括周期、深度以及占空比,由闪烁体的中心发射波长决定。本发明的表面蛾眼式微结构能够有效提升掺铈钇铝石榴石晶体的光提取效率,增强闪烁体的光输出,本发明涉及工艺成熟,在辐射探测领域中具有重要应用价值。

Description

一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构及其制备 方法
技术领域
本发明属于晶体表面加工领域,具体涉及一种应用于射线探测的掺铈钇铝石榴石(Ce:YAG)晶体表面蛾眼式微结构的制备方法。
背景技术
掺铈钇铝石榴石(Ce:YAG)晶体是一种具有优良闪烁性能的闪烁晶体,在高能射线探测成像、安检、医疗和军事等领域都有重要应用,但由于晶体的高折射率使得界面处存在全反射,出射角度大于临界角的光子被限制在晶体内,从而导致光提取效率低下,降低器件探测效率。
为改善传统闪烁体的光提取效率低下问题,本发明借助反应离子束刻蚀技术在晶体表面制备蛾眼式微结构,有效提升闪烁体的光提取效率。
发明内容
本发明针对上述问题,在闪烁晶体掺铈钇铝石榴石表面制备增透微结构。根据发射中心波长设计相应微结构参数,通过双光束干涉曝光和反应离子束刻蚀制备结构,从而提高掺铈钇铝石榴石晶体的光提取效率。
本发明的技术方案具体如下:
一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构,其特征在于,表面蛾眼式微结构通过刻蚀基底形成,该表面微结构具有二维周期性阵列结构,该结构的周期、深度以及占空比应满足0度出射时在中心发射波长及附近光谱范围内具有高透射率。
所述的周期阵列结构的周期为600-900nm。
所述的周期阵列结构的深度为90-270nm。
所述的周期阵列占空比为0.4-0.6。
一种掺铈钇铝石榴石表面蛾眼式微结构制备方法,其特征在于,该方法包括如下步骤:
步骤1)清洁掺铈钇铝石榴石晶体,并在该掺铈钇铝石榴石表面旋涂均匀厚度的光刻胶;
步骤2)采取双光束干涉系统进行首次曝光,再将掺铈钇铝石榴石晶体的曝光面转动90°进行二次曝光;
步骤3)显影操作得到符合设计要求的掩膜图形;
步骤4)借助反应离子束刻蚀技术将制备的掩膜图形转移至掺铈钇铝石榴石晶体基底上;
步骤5)清除表面残留物,得到表面二维周期阵列结构。
本发明的有益效果在于:
在掺铈钇铝石榴石闪烁晶体表面刻蚀蛾眼式微结构从而提高晶体的光提取效率,表面的二维周期微结构,能够有效提高发射中心波长一定谱宽范围内的透过率,增强光输出,这种在基底上制备的微结构不易脱落并且能够得到较大面积的均匀结构,对于闪烁体探测系统具有重要应用价值。
附图说明
图1是具有表面蛾眼式微结构的闪烁体示意图。
图2是表面蛾眼式微结构在原子力显微镜下的测试图像。
图3是表面蛾眼式微结构的理论透射曲线。
图4是平板结构与表面蛾眼式微结构的X射线激发光谱对比图。
图中:Λ是微结构周期,H是微结构深度,微结构占空比f=D/Λ。
具体实施方案
下面结合具体实施例对本发明作进一步描述。
由于掺铈钇铝石榴石中心发射波长为550nm,本发明将针对400nm-700nm波段的透射率作为实施例。该微结构为在基底上直接制备的二维周期阵列的蛾眼式微结构,微结构参数有周期、深度以及占空比等。
本实施例中,图1是本发明实施例中掺铈钇铝石榴石闪烁体表面微结构示意图,图中Λ是微结构周期,H是微结构深度,微结构占空比f=D/Λ。
掺铈钇铝石榴石晶体折射率为n=1.82,光子沿Z轴方向0度出射,根据设计,微结构参数如下:周期Λ=670nm,深度H=90nm,占空比f=0.55。
具体的,本实施例的二维周期阵列的蛾眼式微结构制备包括如下步骤:
(1)将双面抛光的掺铈钇铝石榴石晶体用无水乙醇擦拭;
(2)采用旋涂法将光刻胶均匀涂在掺铈钇铝石榴石晶体表面;
(3)采用双光束干涉曝光系统进行首次曝光,后将掺铈钇铝石榴石晶体的曝光面旋转90度进行二次曝光,通过改变双光束干涉角控制微结构周期;
(4)使用NaOH溶液显影,调节显影时间,至充分露底后用去离子水冲洗并使用高压气枪吹干;
(5)采用反应离子束刻蚀技术将掩膜图形转移至掺铈钇铝石榴石晶体基底上,通过改变刻蚀气体比和时间制备符合设计要求的深度和形状;
(6)采用氧等离子体灰化工艺清除表面残留物质,得到掺铈钇铝石榴石晶体表面二维周期阵列的蛾眼式微结构。
图2是制备的掺铈钇铝石榴石表面蛾眼式微结构在原子力显微镜下测试图像,图3是该实施例中掺铈钇铝石榴石晶体表面二维周期阵列的蛾眼式微结构在400-700nm的理论透射曲线。本发明的表面二维周期阵列的蛾眼式微结构能够有效提高掺铈钇铝石榴石晶体在发射中心波长550nm附近的光提取效率,图4是平板结构与表面蛾眼式微结构的X射线激发光谱对比图,与普通平板式闪烁体相比,本实施例中蛾眼结构使得中心波长光提取效率提高约25%,对于闪烁体探测射线具有重要应用价值。
Figure BDA0003077971780000041
从上表可以看出,采用本发明中的表面蛾眼式微结构,在发射中心波长550nm附近较宽光谱范围内具有高透过率,同时周期性结构的衍射效应使得大于临界角的光束出射,从而提升闪烁晶体的光提取效率。
以上实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。本领域的普通技术人员可以在不脱离本发明构思的前提下,对本发明的技术方案进行修改或者等同替换,这些都属于本发明的保护范围。本发明的保护范围应以权利要求所述为准。

Claims (5)

1.一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构,其特征在于,表面蛾眼式微结构通过刻蚀基底形成,具有二维周期性阵列结构,该结构的周期、深度以及占空比应满足0度出射时在中心发射波长及附近光谱范围内具有高透射率。
2.如权利要求1所述的掺铈钇铝石榴石表面蛾眼式微结构,其特征在于,所述的周期阵列结构的周期为600-900nm。
3.如权利要求1所述的掺铈钇铝石榴石表面蛾眼式微结构,其特征在于,所述的周期阵列结构的深度为90-270nm。
4.如权利要求1所述的掺铈钇铝石榴石表面蛾眼式微结构,其特征在于,所述的周期阵列占空比为0.4-0.6。
5.如权利要求1-4所述的掺铈钇铝石榴石表面蛾眼式微结构制备方法,其特征在于,该方法包括:
步骤1)清洁掺铈钇铝石榴石晶体,并在该掺铈钇铝石榴石表面旋涂均匀厚度的光刻胶;
步骤2)采取双光束干涉系统进行首次曝光,再将掺铈钇铝石榴石晶体的曝光面转动90°进行二次曝光;
步骤3)显影操作得到符合设计要求的掩膜图形;
步骤4)借助反应离子束刻蚀技术将制备的掩膜图形转移至掺铈钇铝石榴石晶体基底上;
步骤5)清除表面残留物,得到表面二维周期阵列结构。
CN202110557849.9A 2021-05-21 2021-05-21 一种掺铈钇铝石榴石闪烁晶体表面蛾眼式微结构及其制备方法 Pending CN113337894A (zh)

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