CN113328023A - Light-emitting device, preparation method thereof and display device - Google Patents
Light-emitting device, preparation method thereof and display device Download PDFInfo
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- CN113328023A CN113328023A CN202110601365.XA CN202110601365A CN113328023A CN 113328023 A CN113328023 A CN 113328023A CN 202110601365 A CN202110601365 A CN 202110601365A CN 113328023 A CN113328023 A CN 113328023A
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- 239000000758 substrate Substances 0.000 claims abstract description 61
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- 229910002601 GaN Inorganic materials 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a light-emitting device, a preparation method thereof and a display device, wherein the light-emitting device comprises: a first substrate; the first reflecting layer is arranged on one side of the first substrate; the light emitting chip is arranged on one side, away from the first substrate, of the first reflecting layer, and the light emitting side of the light emitting chip faces the first reflecting layer; the first reflecting layer at least comprises a first sub reflecting layer and a second sub reflecting layer, the refractive index of the first sub reflecting layer is larger than that of the second sub reflecting layer, and at least one first sub reflecting layer is arranged between any one second sub reflecting layer and the first substrate. According to the invention, the first reflecting layer is additionally arranged to reflect the light rays facing the first reflecting layer, so that the light rays are emitted to the periphery, and the light emitting uniformity of the light emitting chips is improved, thereby being convenient for increasing the distance between the adjacent light emitting chips and reducing the distance between the light emitting chips and the optical diaphragm.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a preparation method thereof and a display device.
Background
With the increasing demand of the high-level Television (TV) market for image quality, the improvement of display image quality becomes a new demand of the high-level TV. At present, organic light-Emitting diodes (OLEDs) with 8K resolution are limited by the problems of compensation circuits, Indium Gallium Zinc Oxide (IGZO) backplane technology, and driving design, and still need to be developed. The Mini Light-emitting Diode (Mini LED) is a brand new display technology, and has advantages in brightness and power consumption compared with the OLED and the dual Cell.
The difference between the Mini LED backlight and the conventional backlight is: the Mini LED can achieve millions of contrasts by Local Dimming (Local Dimming). When the traditional backlight is started, all lamps are started, and areas which are not displayed on the panel are also irradiated by the backlight, so that the dark state is not black enough, and the contrast is low; and the Mini LED can be matched with the display picture of the panel to realize area-on backlight, and the area backlight which is not displayed on the panel is not turned on, so that a complete black state is realized, and the million-level contrast is achieved.
As TV products are made larger and thinner, the Optical Distance (OD) requirements for the backlight are also higher and higher, and a backlight with a smaller OD is required to meet the requirement of an ultra-thin TV. The Mini LED backlight consists of a plurality of LED lamps and optical diaphragms on a back plate, and the LEDs and the optical diaphragms have a minimum distance under the condition that the pitch and the optical diaphragms of the lamps are not changed, so that the display quality is not influenced in order not to form a lamp shadow. Limited by the LED emission angle and uniformity, the OD cannot be further reduced.
In summary, the display device in the prior art has a technical problem that the distance between the LED and the optical film is too large due to the requirement of ensuring the light emitting angle and the light emitting uniformity of the LED.
Disclosure of Invention
The embodiment of the invention provides a light-emitting device, a preparation method thereof and a display device, which are used for solving the technical problem that the distance between an LED and an optical diaphragm is too large due to the fact that the light-emitting angle and the light-emitting uniformity of the LED need to be ensured in the display device in the prior art. .
To solve the above problem, in a first aspect, the present invention provides a light emitting device comprising:
a first substrate;
the first reflecting layer is arranged on one side of the first substrate;
the light emitting chip is arranged on one side, far away from the first substrate, of the first reflecting layer;
the first reflecting layer at least comprises a first sub reflecting layer and a second sub reflecting layer, the refractive index of the first sub reflecting layer is larger than that of the second sub reflecting layer, and at least one first sub reflecting layer is arranged between any one second sub reflecting layer and the first substrate.
In some embodiments of the present invention, the first reflective layer includes a plurality of the first sub reflective layers and a plurality of the second sub reflective layers, and the second sub reflective layers are alternately arranged with the first sub reflective layers in a direction perpendicular to the first substrate.
In some embodiments of the present invention, when the first reflective layer includes three or more sub-reflective layers, at least one first sub-reflective layer is disposed between any one of the second sub-reflective layers and the light emitting chip.
In some embodiments of the present invention, the refractive index of the first sub-reflective layer is 1.7 to 2.4, the refractive index of the second sub-reflective layer is 1.2 to 1.6, and the optical thickness of each sub-reflective layer is equal to 1/4 of the central reflection wavelength of the first reflective layer.
In some embodiments of the present invention, a material of the first sub-reflective layer includes one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, and silicon nitride, and a material of the second sub-reflective layer includes one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, silicon nitride, and amorphous silicon.
In some embodiments of the present invention, the light emitting chip includes a first gallium nitride layer, a quantum well laser layer, and a second gallium nitride layer, which are sequentially stacked, the light emitting device further includes an insulating layer, a first electrode, and a second electrode, the insulating layer is disposed on one side of the second gallium nitride layer, which is far away from the quantum well laser layer, the second electrode and the insulating layer are disposed at an interval on the same layer, through holes are disposed in the insulating layer, the second gallium nitride layer, the quantum well laser layer, and the first gallium nitride layer, and the first electrode covers the insulating layer and contacts the first reflective layer through the through holes.
In a second aspect, the present invention provides a method for manufacturing a light emitting device, the method for manufacturing a light emitting device according to any one of the first aspect, comprising the steps of:
providing a first substrate, and preparing a first reflecting layer and a light emitting chip on the first substrate;
the light emitting side of the light emitting chip faces the first reflecting layer, the first reflecting layer at least comprises a first sub reflecting layer and a second sub reflecting layer, the refractive index of the first sub reflecting layer is larger than that of the second sub reflecting layer, and at least one first sub reflecting layer is arranged between the second sub reflecting layer and the first substrate.
In some embodiments of the present invention, the step of preparing the first reflective layer and the light emitting chip includes: preparing the first reflective layer on the first substrate by chemical vapor deposition, and preparing the light emitting chip on the first reflective layer.
In some embodiments of the present invention, the step of preparing the first reflective layer and the light emitting chip includes: providing an adhesive sealing film, depositing the first reflecting layer on the adhesive sealing film, bonding the adhesive sealing film and the light-emitting chip through mould pressing, and connecting the first reflecting layer and the first substrate.
In a third aspect, the present invention also provides a display device, including: a second substrate, wherein a plurality of light emitting devices as claimed in any one of claims 1 to 6 are disposed on the second substrate, a second reflective layer is disposed between two adjacent light emitting devices, and any one of the light emitting devices is electrically connected to the second substrate.
Compared with the existing light-emitting device, the manufacturing method thereof and the display device, the light-emitting device has the advantages that the first reflecting layer is additionally arranged, the first reflecting layer is positioned on the light-emitting side of the light-emitting chip and reflects the light rays facing the first reflecting layer, so that the light rays are emitted to the periphery, the light-emitting uniformity of the light-emitting chip is improved, the distance between the adjacent light-emitting chips is conveniently increased, the distance between the light-emitting chips and the optical membrane is reduced, and the production yield and the product quality are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a structure of a light emitting device in one embodiment of the present invention;
fig. 2 is a schematic structural diagram of a display device according to an embodiment of the invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The display device in the prior art has the technical problem that the distance between an LED and an optical diaphragm is too large due to the need of ensuring the luminous angle and the light-emitting uniformity of the LED.
Based on the above, the embodiment of the invention provides a light emitting device, a preparation method thereof and a display device. Each of which is described in detail below.
First, a light emitting device is provided in an embodiment of the present invention, as shown in fig. 1, and fig. 1 is a schematic structural diagram of the light emitting device in an embodiment of the present invention. The light emitting device includes:
a first substrate 101;
a first reflective layer 102 disposed on one side of the first substrate 101;
a light emitting chip 103 disposed on a side of the first reflective layer 102 away from the first substrate 101, wherein a light emitting side of the light emitting chip 103 faces the first reflective layer 102;
the first reflective layer 102 includes at least a first sub-reflective layer 102a and a second sub-reflective layer 102b, a refractive index n1 of the first sub-reflective layer 102a is greater than a refractive index n2 of the second sub-reflective layer 102b, and at least one first sub-reflective layer 102a is disposed between any one of the second sub-reflective layers 102b and the first substrate 101.
Compared with the existing light-emitting device, the manufacturing method thereof and the display device, the first reflection layer 102 is additionally arranged, the first reflection layer 102 is positioned on the light-emitting side of the light-emitting chip 103, and reflects the light rays towards the first reflection layer 102, so that the light rays are emitted to the periphery, the light-emitting uniformity of the light-emitting chip 103 is improved, the distance between the adjacent light-emitting chips 103 is conveniently increased, the distance between the light-emitting chips 103 and the optical membrane 108 is reduced, and the production yield and the product quality are improved.
On the basis of the above embodiments, the first reflective layer 102 includes a first sub-reflective layer 102a and a second sub-reflective layer 102b, the refractive index n1 of the first sub-reflective layer 102a is greater than the refractive index n2 of the second sub-reflective layer 102b, and at least one first sub-reflective layer 102a is disposed between any one of the second sub-reflective layers 102b and the first substrate 101. In this embodiment, the first reflective layer 102 is preferably a distributed bragg reflector, since light is reflected at the interface when passing through different media, and the reflectivity is related to the refractive index between the media, the first sub-reflective layer 102a and the second sub-reflective layer 102b with different refractive indexes are periodically stacked together, when light passes through these films with different refractive indexes, the light reflected by each layer interferes constructively due to the change of phase angle, and the reflectivity can reach over 99%. In other embodiments, the first reflective layer 102 may also be a metal reflective layer. However, compared with the reflective layer made of a metal material, in the aspect of improving the brightness of the light emitting chip, the distributed bragg reflective layer has no absorption problem and can adjust the position of the energy gap by changing the refractive indexes or thicknesses of the first sub-reflective layer 102a and the second sub-reflective layer 102 b.
The first reflective layer 102 includes a plurality of first sub-reflective layers 102a and a plurality of second sub-reflective layers 102b, and the second sub-reflective layers 102b are alternately arranged with the first sub-reflective layers 102a in a direction perpendicular to the first substrate 101.
In the present embodiment, the refractive index of the first sub-reflective layer 102a is n1, the refractive index of the second sub-reflective layer 102b is n2, and n1 > n 2. At least one first sub-reflective layer 102a is disposed between any one of the second sub-reflective layers 102b and the first substrate 101. That is, a film layer directly contacting the first substrate 101 or closest to the first substrate 101 in the first reflective layer 102 must be the first sub-reflective layer 102a having a larger refractive index.
In another embodiment of the present invention, the first reflective layer 102 includes three or more sub-reflective layers, and at least one first sub-reflective layer 102a is disposed between any one of the second sub-reflective layers 102 and the light emitting chip 103. In this embodiment, the number of the self-reflective layers included in the first reflective layer 102 is preferably an odd number, both outermost sides of the first reflective layer 102 are the first sub-reflective layers 102a with a larger refractive index, and the first sub-reflective layers 102a and the second sub-reflective layers 102b are alternately arranged to form a periodic structure, such as a three-layer structure 102a/102b/102a or a five-layer structure 102a/102b/102a/102b/102 a. At this time, the light reflected by the first reflective layer 102 is dispersed all around, so as to ensure the uniformity of the emitted light.
The refractive index n1 of the first sub-reflecting layer 102a is 1.7-2.4, the refractive index n2 of the second sub-reflecting layer 102b is 1.2-1.6, and the optical thickness of each sub-reflecting layer is equal to 1/4 of the central reflection wavelength of the first reflecting layer 102. In comparison with the examples, when the optical thickness of each sub-reflective layer is 1/4 of the central reflection wavelength, the total reflectance of the first reflective layer 102 is highest when the central reflection wavelength and the number of sub-reflective layers are constant.
The material of the first sub-reflective layer 102a includes one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, and silicon nitride, and the material of the second sub-reflective layer 102b includes one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, silicon nitride, and amorphous silicon. In a specific embodiment, the material of the first sub-reflective layer 102a includes silicon nitride and has a refractive index of about 1.8, and the material of the second sub-reflective layer 102b includes silicon oxide and has a refractive index of about 1.6.
The light emitting chip 103 comprises a first gallium nitride layer 103a, a quantum well laser layer 103b and a second gallium nitride layer 103c which are sequentially stacked, the light emitting device further comprises an insulating layer 104, a first electrode 105a and a second electrode 105b, the insulating layer 104 is arranged on one side, away from the quantum well laser layer 103b, of the second gallium nitride layer 103c, the second electrode 105b and the insulating layer 104 are arranged at intervals on the same layer, through holes are formed in the insulating layer 104, the second gallium nitride layer 103c, the quantum well laser layer 103b and the first gallium nitride layer 103a, and the first electrode 105a covers the insulating layer 104 and penetrates through the through holes to be in contact with the first reflecting layer 102. In this embodiment, the first gallium nitride layer 103a is an N-type channel, the second gallium nitride layer 103c is a P-type channel, and the quantum well laser layer 103b is an active layer, and since the quantum well laser layer 103b is an active layer of the light emitting chip 103, the light emitting chip 103 has great advantages in terms of threshold current, temperature characteristics, modulation characteristics, polarization characteristics, and the like.
The first substrate 101 is preferably a sapphire substrate, the material of the sapphire substrate mainly includes aluminum oxide (Al2O3), the optical transmission band of the first substrate 101 is very wide, and the first substrate has good light transmittance, and has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high melting point and the like, and is often used as a photoelectric element material for manufacturing LEDs.
Secondly, in order to better manufacture the light emitting device in the embodiment of the present invention, on the basis of the light emitting device, the embodiment of the present invention further provides a manufacturing method of the light emitting device, wherein the manufacturing method is used for manufacturing the light emitting device as described in any one of the above embodiments.
The invention provides a preparation method of a light-emitting device, which comprises the following steps:
s1, providing a first substrate 101, and preparing a first reflecting layer 102 and a light emitting chip 103 on the first substrate 101;
the first reflective layer 102 includes at least a first sub-reflective layer 102a and a second sub-reflective layer 102b, a refractive index n1 of the first sub-reflective layer 102a is greater than a refractive index n2 of the second sub-reflective layer 102b, and at least one first sub-reflective layer 102a is disposed between any one of the second sub-reflective layers 102b and the first substrate 101.
In one embodiment of the present invention, the step S1 of preparing the first reflective layer 102 and the light emitting chip 103 includes: the first reflective layer 102 is prepared on the first substrate 101 by Chemical Vapor Deposition (CVD), and the light emitting chip 103 is prepared on the first reflective layer 102. In this embodiment, the first reflective layer 102 is sequentially formed on the first substrate 101, and then the light emitting chip 103 is formed.
In another embodiment of the present invention, the step S1 of preparing the first reflective layer 102 and the light emitting chip 103 includes: providing an adhesive sealing film, depositing the first reflective layer 102 on the adhesive sealing film, adhering the adhesive sealing film to the light emitting chip 103 by molding, and connecting the first reflective layer 102 to the first substrate 101. In this embodiment, the first reflective layer 102 and the light emitting chip 103 are bonded together by the sealing adhesive to form an integrated structure, and then the integrated structure is connected to the first substrate 101.
Finally, an embodiment of the present invention further provides a display device, where the display device includes the light emitting device described in any one of the above embodiments. By employing the light emitting device as described in the above embodiments, the performance of the display device is further improved.
The present invention provides a display device, including: a second substrate 106, wherein a plurality of light emitting devices described in the above embodiments are disposed on the second substrate 106, an optical film 108 disposed opposite to the second substrate and a second reflective layer 107 is disposed between two adjacent light emitting devices, and any of the light emitting devices is electrically connected to the second substrate 106. In this embodiment, the display device adopts a flip-chip structure, the first substrate 101 and the second substrate 201 are disposed opposite to each other, the light emitting chip 103 is disposed between the first substrate 101 and the second substrate 201, and the optical film 108 is disposed on a side of the first substrate 101 away from the second substrate 106. Part light is through the reflection of first reflector 102, to keeping away from the direction outgoing of light-emitting side, through adjacent two set up between the luminescent device second reflector 103, second reflector 103 reflects light once more, light still to light-emitting side outgoing, and can have the optical uniformity concurrently simultaneously. So as to shorten the distance between the light emitting chip 103 and the optical film 108, which is beneficial to the preparation of ultra-thin display devices.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and specific implementations of each unit, structure, or operation may refer to the foregoing method embodiments, which are not described herein again.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A light emitting device, comprising:
a first substrate;
the first reflecting layer is arranged on one side of the first substrate;
the light emitting chip is arranged on one side, away from the first substrate, of the first reflecting layer, and the light emitting side of the light emitting chip faces the first reflecting layer;
the first reflecting layer at least comprises a first sub reflecting layer and a second sub reflecting layer, the refractive index of the first sub reflecting layer is larger than that of the second sub reflecting layer, and at least one first sub reflecting layer is arranged between any one second sub reflecting layer and the first substrate.
2. The light-emitting device according to claim 1, wherein the first reflective layer comprises a plurality of the first sub-reflective layers and a plurality of the second sub-reflective layers, and the second sub-reflective layers alternate with the first sub-reflective layers in a direction perpendicular to the first substrate.
3. The light-emitting device according to claim 1, wherein when the first reflective layer includes three or more sub-reflective layers, at least one first sub-reflective layer is provided between any one of the second sub-reflective layers and the light-emitting chip.
4. The light-emitting device according to claim 2, wherein the refractive index of the first sub-reflective layer is 1.7 to 2.4, the refractive index of the second sub-reflective layer is 1.2 to 1.6, and the optical thickness of each sub-reflective layer is equal to 1/4 of the central reflection wavelength of the first reflective layer.
5. The light-emitting device according to claim 2, wherein the material of the first sub-reflective layer comprises one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, and silicon nitride, and the material of the second sub-reflective layer comprises one of silicon oxide, titanium oxide, magnesium fluoride, zinc sulfide, silicon nitride, and amorphous silicon.
6. The light-emitting device according to claim 1, wherein the light-emitting chip comprises a first gallium nitride layer, a quantum well laser layer and a second gallium nitride layer which are sequentially stacked, the light-emitting device further comprises an insulating layer, a first electrode and a second electrode, the insulating layer is arranged on one side, away from the quantum well laser layer, of the second gallium nitride layer, the second electrode and the insulating layer are arranged at intervals, through holes are arranged in the insulating layer, the second gallium nitride layer, the quantum well laser layer and the first gallium nitride layer, and the first electrode covers the insulating layer and is in contact with the first reflecting layer through the through holes.
7. A method for manufacturing a light emitting device, comprising the steps of:
providing a first substrate, and preparing a first reflecting layer and a light emitting chip on the first substrate;
the light emitting side of the light emitting chip faces the first reflecting layer, the first reflecting layer at least comprises a first sub reflecting layer and a second sub reflecting layer, the refractive index of the first sub reflecting layer is larger than that of the second sub reflecting layer, and at least one first sub reflecting layer is arranged between the second sub reflecting layer and the first substrate.
8. The manufacturing method according to claim 7, wherein the steps of manufacturing the first reflective layer and the light emitting chip include: preparing the first reflective layer on the first substrate by chemical vapor deposition, and preparing the light emitting chip on the first reflective layer.
9. The manufacturing method according to claim 7, wherein the steps of manufacturing the first reflective layer and the light emitting chip include: providing an adhesive sealing film, depositing the first reflecting layer on the adhesive sealing film, bonding the adhesive sealing film and the light-emitting chip through mould pressing, and connecting the first reflecting layer and the first substrate.
10. A display device, comprising: a second substrate, wherein a plurality of light emitting devices as claimed in any one of claims 1 to 6 are disposed on the second substrate, a second reflective layer is disposed between two adjacent light emitting devices, and any one of the light emitting devices is electrically connected to the second substrate.
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