JP2010034074A - Display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device including a resonator structure, and in addition, including a structure and composition for further improving the efficiency of light extraction. <P>SOLUTION: The display device includes (A) a plurality of light emitting devices 10 formed by laminating a first electrode 21, an organic layer 23, and a second electrode 22, and resonating light emitted by a light emitting layer 23 between the first electrode 21 and the second electrode 22 and emitting from the second electrode 22, and (B) a transparent upper substrate 33 fixed above the second electrode 22. When a distance from a maximum light emitting position of the light emitting layer to a first interface is L<SB>1</SB>, an optical distance is OL<SB>1</SB>, a distance from the maximum light emitting position of the light emitting layer to a second interface is L<SB>2</SB>, and an optical distance is OL<SB>2</SB>, and m<SB>1</SB>and m<SB>2</SB>are integers, these satisfies predetermined expressions. A light reflecting part 40 is formed on the transparent upper substrate 33. A lens part 50 for passing the light emitted from the light emitting layer through the second electrode 22 is formed on a first surface of the transparent upper substrate 33. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a display device, and more particularly to a display device including a light emitting element having a resonator structure.

  In recent years, lighting devices and organic electroluminescence display devices (hereinafter simply referred to as organic EL display devices) using organic electroluminescence elements (hereinafter simply referred to as organic EL devices) as light emitting elements are becoming widespread. . In the organic EL display device, there is a strong demand for development of a technique for efficiently extracting light. This is because if the light extraction efficiency is low, the actual light emission amount in the organic EL element is not effectively utilized, which causes a large loss in terms of power consumption and the like.

  For this reason, in an organic EL display device, a technique for improving light extraction efficiency by providing a protrusion structure is disclosed in, for example, Japanese Patent Application Laid-Open No. 2003-077648. By providing a microlens, light extraction efficiency can be improved. Techniques for improvement are disclosed in, for example, JP-A-2002-184567 and JP-T-2005-531102. An organic EL display device having various reflectors including a structure of a compound parabolic concentrator (CPC) used as a concentrator of a solar cell is also disclosed in JP-T-2005-51102. ing.

  In addition, in an organic EL element, attempts have been made to control light generated in the light emitting layer, for example, by improving the color purity of the emitted color or increasing the light emission efficiency by introducing a resonator structure (for example, , International Publication No. 01/39554). Furthermore, the light emission intensity can be maximized by making the light generated in the resonator structure and the light reflected and returned by the respective reflection end portions mutually intensify each other. No. 3,703,028.

JP 2003-077648 A JP 2002-184567 A Special table 2005-51102 International Publication No. 01/39554 Japanese Patent No. 3703028

  In Patent Documents 1 to 3, the power consumption is reduced by effectively using light that is wasted due to total reflection in the light emitting element. There is no mention of optimizing the optical conditions, specifically, the organic layer including the light emitting layer of the organic EL element for improving the light extraction efficiency. In Patent Documents 4 to 5, the light extraction efficiency can be increased by introducing a resonator structure, but further improvement in the light extraction efficiency is strongly demanded.

  Accordingly, an object of the present invention is to provide a display device having a resonator structure and a structure and configuration that can further improve the light extraction efficiency.

In order to achieve the above object, a display device according to the first aspect or the second aspect of the present invention provides:
(A) a first interface, an organic layer having a light emitting layer made of an organic light emitting material, and a second electrode, and a first interface constituted by an interface between the first electrode and the organic layer; A plurality of light emitting elements that resonate light emitted from the light emitting layer and emit part of the light from the second electrode between the second interface constituted by the interface between the two electrodes and the organic layer; and
(B) a transparent upper substrate having a first surface facing the second electrode and a second surface facing the first surface and fixed above the second electrode;
Is a display device. Then, L ₁ the distance from the maximum light emission position of the light-emitting layer and the first interface, OL ₁ optical distance, the distance from the maximum light emission position of the light-emitting layer and the second interface L _2, the optical distance to the OL _2, m _{When 1} and m ₂ are integers, the following expressions (1-1), (1-2), (1-3), and (1-4) are satisfied.

  In the display device according to the first aspect of the present invention, a part of the light emitted from the light emitting layer through the second electrode and incident on the transparent upper substrate extends from the first surface of the transparent upper substrate. A light reflecting portion (reflector portion) that reflects and emits light from the second surface of the transparent upper substrate is formed.

  On the other hand, in the display device according to the second aspect of the present invention, the first surface of the transparent upper substrate is formed with a lens portion through which light emitted from the light emitting layer through the second electrode passes. Features.

_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (1-1)
0.7 {−Φ ₂ / (2π) + m ₂ } ≦ 2 × OL ₂ /λ≦1.2{−Φ ₂ / (2π) + m ₂ } (1-2)
L ₁ <L ₂ (1-3)
m ₁ <m ₂ (1-4)
here,
λ: Maximum peak wavelength of light spectrum generated in the light emitting layer (or a desired wavelength in the light generated in the light emitting layer)
Φ ₁ : Phase shift amount of reflected light generated at the first interface (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

The distance L ₁ from the maximum light emitting position of the light emitting layer to the first interface refers to the actual distance (physical distance) from the maximum light emitting position of the light emitting layer to the first interface, and from the maximum light emitting position of the light emitting layer. The distance L ₂ to the second interface refers to the actual distance (physical distance) from the maximum light emission position of the light emitting layer to the second interface. The optical distance is also called an optical path length, and generally indicates n × L when a light beam passes through a medium having a refractive index n by a distance L. The same applies to the following. Therefore, when the average refractive index of the organic layer is n _ave ,
OL ₁ = L ₁ × n _ave
OL ₂ = L ₂ × n _ave
There is a relationship. Here, the average refractive index n _ave is the sum of the products of the refractive index and thickness of each layer constituting the organic layer, and divided by the thickness of the organic layer.

  In the display device according to the first aspect of the present invention, the arrangement of the plurality of light emitting elements may be a stripe arrangement, and a plurality of light reflecting portions may be provided for one light emitting element. Alternatively, the arrangement of the plurality of light emitting elements may be a diagonal arrangement, a delta arrangement, or a rectangle arrangement, and one light reflecting portion may be provided for one light emitting element. The above technical matters can also be applied to a display device according to a third aspect of the present invention described later.

In the display device according to the first aspect of the present invention including the above-described preferred mode,
The light reflecting portion is composed of a part of the surface of the rotating body,
The lower end portion of the light reflecting portion is located in the first surface of the transparent upper substrate,
The upper end portion of the light reflecting portion is located inside the transparent upper substrate and is parallel to the second surface of the transparent upper substrate,
The axis of the light reflecting portion that is the rotation axis of the rotating body is the z axis, the radius of the lower end of the light reflecting portion is r _Ref-B , the radius of the upper end of the light reflecting portion is r _Ref-T , and the lower end of the light reflecting portion When the distance from the upper part to the upper end along the z-axis is L _Ref and the refractive index of the transparent upper substrate is n _Sub-T ,
(R _Ref-T + r _Ref-B ) / L _Ref ≦ (n _Sub-T ² −1) ^−1/2
It is desirable to satisfy And in this case
The cross-sectional shape of the light reflecting portion when the light reflecting portion is cut in a virtual plane including the z axis is a part of a parabola,
The perpendicular drawn from the focal point of the parabola to the quasi-line is tilted with respect to the z-axis,
When the distance from the intersection of the virtual plane and the lower end of the light reflecting portion when the light reflecting portion is cut at the virtual plane to the focal point of the parabola is L _Focus ,
0.1 ≦ r _Ref-B / L _Focus <0.5
In this way, it is possible to improve the luminance within the effective visual range, and to obtain a bright screen while further reducing the power consumption of the display device. Furthermore, the inclination angle θ _{Para with} respect to the z-axis of the perpendicular drawn from the parabolic focus to the quasi-line, when the refractive index of the transparent upper substrate is n _Sub-T ,
sin (θ _Para ) <1 / n _Sub-T
Preferably, the parabolic focus is included in the first surface of the transparent upper substrate. In addition, although two symmetrical shapes are obtained as the cross section of the light reflecting portion when the light reflecting portion is cut along the virtual plane including the z axis, the light reflection when the light reflecting portion is cut along the virtual plane including the z axis is obtained. When discussing the cross-sectional shape of the part, the discussion will be made on one of the two shapes. In addition, the above technical matters include “transparent upper substrate” as “transparent lower substrate”, “second electrode” as “first electrode”, and “n _Sub-T ” as “n _Sub-B ”. Can be applied to a display device according to a third aspect of the present invention described later.

Alternatively, in the display device according to the first aspect of the present invention,
The light reflecting portion is composed of a part of the surface of the rotating body,
The lower end portion of the light reflecting portion is located in the first surface of the transparent upper substrate,
The upper end portion of the light reflecting portion is located inside the transparent upper substrate and is parallel to the second surface of the transparent upper substrate,
The axis of the light reflecting portion, which is the rotation axis of the rotating body, is defined as the z axis, and the angle formed with the z axis on the second electrode side of the light emitted from the second electrode at the point where the z axis intersects the second electrode is θ _O−2 when the refractive index of the transparent top substrate and the n _Sub-T,
sin (θ _O-2 )> 1 / n _Sub-T
It can be set as the structure which satisfies these. In addition, the above technical matters include “transparent upper substrate” as “transparent lower substrate”, “second electrode” as “first electrode”, and “n _Sub-T ” as “n _Sub-B ”. By replacing “θ _O-2 ” with “θ _O-1 ”, the present invention can also be applied to a display device according to a third aspect of the present invention described later.

  On the other hand, in the display device according to the second aspect of the present invention, the arrangement of the plurality of light emitting elements may be a stripe arrangement, and a plurality of lens portions may be provided for one light emitting element. Alternatively, the arrangement of the plurality of light emitting elements may be a diagonal arrangement, a delta arrangement, or a rectangle arrangement, and one lens unit may be provided for one light emitting element. The above technical matters can also be applied to a display device according to a fourth aspect of the present invention described later.

Alternatively, in the display device according to the second aspect of the present invention including the above-described preferred mode,
The axis of the lens unit is an optical axis and z-axis, z-axis angle theta _O-2 formed by the z-axis at the second electrode side of the light emitted from the second electrode at the point of intersection with the second electrode, the transparent upper substrate _Where n _Sub-T is the refractive index of
sin (θ _O-2 )> 1 / n _Sub-T
It is desirable to satisfy In addition, the above technical matters include “second electrode” as “first electrode”, “θ _O-2 ” as “θ _O-1 ”, and “n _Sub-T ” as “n _Sub- ” _. by read as _B "may be applied to the display device according to a fourth aspect of the present invention to be described later.

  In the display device according to the first aspect or the second aspect of the present invention including the preferred embodiment and configuration described above, the average light reflectance of the first electrode is 50% or more, preferably 80% or more. The average light transmittance of the two electrodes is 50% to 90%, preferably 60% to 90%. In addition, the above technical matter is that the “second electrode” is read as “first electrode”, and the “second electrode” is read as “first electrode”. The present invention can also be applied to the display device according to the fourth aspect.

In the display device according to the first aspect or the second aspect of the present invention, the first electrode is made of a light reflecting material, the second electrode is made of a semi-light transmitting material, and the light extraction efficiency can be maximized. can be ₁ = 0, m ₂ = ₁ in a form. In the display device according to the first aspect or the second aspect of the present invention, or the display device according to the fifth aspect to be described later, an electron transport layer (hole supply layer) rather than a hole transport layer (hole supply layer). By increasing the thickness of the electron supply layer, it becomes possible to supply electrons to the light emitting layer necessary and sufficient for high efficiency with a low driving voltage. In other words, the hole transport layer is disposed between the first electrode corresponding to the anode electrode and the light emitting layer, and the film is formed with a film thickness thinner than that of the electron transport layer, thereby increasing the supply of holes. It becomes possible. As a result, there is no excess or deficiency of holes and electrons, and a carrier balance with a sufficiently large amount of carrier supply can be obtained, so that high luminous efficiency can be obtained. In addition, since there is no excess or deficiency of holes and electrons, carrier balance is not easily lost, driving deterioration is suppressed, and the light emission life can be extended.

Furthermore, in the display device according to the first aspect or the second aspect of the present invention including the preferred embodiment and configuration described above, a protection is provided between the second electrode and the transparent upper substrate from the second electrode side. It can be set as the form in which the film | membrane and the contact bonding layer are formed. Here, as a material constituting the protective film, it is preferable to use a material that is transparent to the light emitted from the light emitting layer, is dense, and does not transmit moisture. Specifically, for example, amorphous silicon (α- Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si _1-x N _x ), amorphous silicon oxide (α-Si _1-y O _y ), amorphous carbon (α-C), amorphous oxide -Silicon nitride (α-SiON), Al ₂ O ₃ can be mentioned, and as the material constituting the adhesive layer, acrylic adhesive, epoxy adhesive, urethane adhesive, silicone adhesive, cyanoacrylate Examples thereof include thermosetting adhesives such as system adhesives and ultraviolet curable adhesives. In the display device according to the third to fifth aspects of the present invention described later, a second substrate is disposed above the second electrode, and the first electrode and the second substrate are From the first electrode side, the above-described protective film and adhesive layer can be formed.

In order to achieve the above object, a display device according to the third aspect or the fourth aspect of the present invention provides:
(A) a transparent lower substrate having a first surface and a second surface facing the first surface; and
(B) a first electrode, an organic layer having a light emitting layer made of an organic light emitting material, and a second electrode provided on the first surface of the transparent lower substrate or above the first surface of the transparent lower substrate; Light emitted from the light emitting layer between the first interface formed by the interface between the first electrode and the organic layer and the second interface formed by the interface between the second electrode and the organic layer. A plurality of light emitting elements that resonate and emit part of the light from the first electrode,
Is a display device. The distance from the maximum light emission position of the light emitting layer to the first interface is L ₁ , the optical distance is OL ₁ , the distance from the maximum light emission position of the light emitting layer to the second interface is L ₂ , and the optical distance is OL ₂ , m _{When 1} and m ₂ are integers, the following expressions (2-1), (2-2), (2-3), and (2-4) are satisfied.

  In the display device according to the third aspect of the present invention, a part of the light emitted from the light emitting layer through the first electrode and incident on the transparent lower substrate extends from the first surface of the transparent lower substrate. A light reflecting portion (reflector portion) that reflects and emits from the second surface of the transparent lower substrate is formed.

  On the other hand, in the display device according to the fourth aspect of the present invention, the first surface of the transparent lower substrate is formed with a lens portion through which light emitted from the light emitting layer through the first electrode passes. Features.

_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (2-1)
_{0.7 {-Φ 2 / (2π)} + m 2} ≦ 2 × OL 2 /λ≦1.2{-Φ 2 / (2π) + m 2} (2-2)
L ₁ > L ₂ (2-3)
m ₁ > m ₂ (2-4)
here,
λ: Maximum peak wavelength of light spectrum generated in the light emitting layer (or a desired wavelength in the light generated in the light emitting layer)
Φ ₁ : Phase shift amount of reflected light generated at the first interface (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

In the display device according to the third aspect or the fourth aspect of the present invention, the first electrode is made of a semi-light transmitting material, the second electrode is made of a light reflecting material, and m ₁ = which can maximize the light extraction efficiency. 1, m ₂ = 0. Even in the display device according to the third aspect or the fourth aspect of the present invention, by making the electron transporting layer thicker than the hole transporting layer, the light emitting layer is necessary and sufficient for high efficiency with a low driving voltage. Can be supplied. That is, the hole transport layer is disposed between the second electrode corresponding to the anode electrode and the light emitting layer, and the film is formed with a film thickness thinner than that of the electron transport layer, thereby increasing the supply of holes. It becomes possible. As a result, there is no excess or deficiency of holes and electrons, and a carrier balance with a sufficiently large amount of carrier supply can be obtained, so that high luminous efficiency can be obtained. In addition, since there is no excess or deficiency of holes and electrons, carrier balance is not easily lost, driving deterioration is suppressed, and the light emission life can be extended.

In order to achieve the above object, a display device according to a fifth aspect of the present invention is formed by laminating a first electrode, an organic layer having a light emitting layer made of an organic light emitting material, and a second electrode. The light emitted from the light emitting layer is resonated between the first interface constituted by the interface between the one electrode and the organic layer and the second interface constituted by the interface between the second electrode and the organic layer, A display device comprising a plurality of light emitting elements, each of which is emitted from the second electrode,
The distance from the maximum light emission position of the light emitting layer to the first interface is L ₁ , the optical distance is OL ₁ , the distance from the maximum light emission position of the light emitting layer to the second interface is L ₂ , the optical distance is OL ₂ , m ₁ and When m ₂ is an integer, the following formula (3-1), formula (3-2), formula (3-3), and formula (3-4) are satisfied.

_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (3-1)
_{0.7 {-Φ 2 / (2π)} + m 2} ≦ 2 × OL 2 /λ≦1.2{-Φ 2 / (2π) + m 2} (3-2)
L ₁ <L ₂ (3-3)
m ₁ <m ₂ (3-4)
here,
λ: Maximum peak wavelength of light spectrum generated in the light emitting layer (or a desired wavelength in the light generated in the light emitting layer)
Φ ₁ : Phase shift amount of reflected light generated at the first interface (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

  In the display device according to the fifth aspect of the present invention, the average light reflectance of the first electrode is 50% or more, preferably 80% or more, and the average light transmittance of the second electrode is 50% to 90%, preferably Is preferably 60% to 90%.

In the display device according to a fifth aspect of the present invention including the preferred embodiment described above, the first electrode made of a light reflecting material, the second electrode is made of a semi-light-transmissive material, m ₁ capable of increasing the most light extraction efficiency = 0, m ₂ = 1.

  A first electrode in the display device according to the first, second, or fifth aspect of the present invention (these display devices may be collectively referred to as “top-emitting display device”), Alternatively, the second electrodes (these devices) in the display devices according to the third to fourth embodiments of the present invention (these display devices may be collectively referred to as “bottom emission type display devices”). In the case where the light reflecting electrode functions as an anode electrode as a material (light reflecting material) constituting the electrode (sometimes referred to as “light reflecting electrode” for convenience), for example, platinum (Pt), gold (Au), High work function metals or alloys such as silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), tantalum (Ta) (for example, Mainly composed of silver, 0.3 layer % To 1 wt% of palladium (Pd), it may be mentioned 0.3% to 1% by weight copper (Cu) Ag-Pd-Cu alloy and, Al-Nd alloy containing). Furthermore, when a conductive material with a small work function such as aluminum (Al) and an aluminum-containing alloy and a high light reflectance is used, an appropriate hole injection layer is provided to inject holes. By improving the property, it can be used as an anode electrode. Examples of the thickness of the light reflecting electrode include 0.1 μm to 1 μm. Alternatively, it has excellent hole injection characteristics such as indium and tin oxide (ITO) and indium and zinc oxide (IZO) on a highly light reflective reflective film such as a dielectric multilayer film or aluminum (Al). It is also possible to have a structure in which transparent conductive materials are laminated. On the other hand, when the light reflecting electrode functions as a cathode electrode, it is desirable to use a conductive material having a small work function and a high light reflectance. It can also be used as a cathode electrode by improving electron injection properties by providing an appropriate electron injection layer.

On the other hand, the second electrode in the display device (top emission type display device) according to the first, second, or fifth aspect of the present invention, or the third to fourth aspects of the present invention. As a material (semi-light transmissive material) constituting the first electrode (these electrodes may be referred to as “semi-light transmissive electrodes” for convenience) in the display device (bottom emission type display device) according to the embodiment, When the light transmitting electrode functions as a cathode electrode, it is desirable that the light transmitting electrode is made of a conductive material having a small work function value so that the emitted light can be transmitted and electrons can be efficiently injected into the organic layer. Aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), alloy of magnesium and silver (Mg-Ag alloy), alloy of aluminum (Al) and lithium (Li) (Al-L) Alloy) or other metal or alloy having a low work function, among which Mg-Ag alloy is preferable, and Mg: Ag = 5: 1 to 30: 1 is exemplified as the volume ratio of magnesium to silver. Can do. Examples of the thickness of the semi-transmissive electrode include 4 nm to 50 nm, preferably 4 nm to 20 nm, and more preferably 6 nm to 12 nm. Alternatively, the semi-transparent electrode is formed from the organic layer side with the material layer described above and a so-called transparent electrode made of, for example, ITO or IZO (for example, a thickness of 3 × 10 ⁻⁸ m to 1 × 10 ⁻⁶ m). A laminated structure may also be used. Alternatively, a bus electrode (auxiliary electrode) made of a low-resistance material may be provided for the semi-light transmissive electrode to reduce the resistance of the entire semi-light transmissive electrode. On the other hand, in the case where the semi-light transmissive electrode functions as an anode electrode, it is desirable that the semi-light transmissive electrode is made of a conductive material that transmits luminescent light and has a large work function value.

  As a method for forming the first electrode and the second electrode, for example, an electron beam vapor deposition method, a hot filament vapor deposition method, a vapor deposition method including a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition method (CVD method), or an ion plating method. Various methods such as screen printing, ink jet printing, and metal mask printing; plating methods (electroplating and electroless plating methods); lift-off methods; laser ablation methods; sol-gel methods, etc. Can be mentioned. According to various printing methods and plating methods, it is possible to directly form the first electrode and the second electrode having a desired shape (pattern). When the first electrode and the second electrode are formed after the organic layer is formed, a film forming method with particularly low energy of film forming particles such as a vacuum evaporation method or a film forming method such as an MOCVD method is used. The formation is preferable from the viewpoint of preventing damage to the organic layer. When the organic layer is damaged, there is a possibility that a non-light emitting pixel (or non-light emitting sub-pixel) called a “dark spot” is generated due to generation of a leak current. In addition, it is preferable to execute the formation from the formation of the organic layer to the formation of these electrodes without exposure to the atmosphere from the viewpoint of preventing the deterioration of the organic layer due to moisture in the atmosphere.

The first electrode and the second electrode absorb a part of the incident light and reflect the rest. Therefore, a phase shift occurs in the reflected light. The phase shift amounts Φ ₁ and Φ ₂ are calculated based on the values of the real part and the imaginary part of the complex refractive index of the material constituting the first electrode and the second electrode, for example, using an ellipsometer. (See, for example, “Principles of Optic”, Max Born and Emil Wolf, 1974 (PERGAMON PRESS)). In addition, an organic layer and other refractive indexes can also be calculated | required by measuring using an ellipsometer.

  The light reflecting portion in the display device according to the first aspect or the third aspect of the present invention is composed of, for example, a light reflecting layer formed on the transparent upper substrate or the transparent lower substrate. Here, as the light reflecting layer, an aluminum (Al) layer, an aluminum alloy layer (for example, an Al—Nd layer), a chromium (Cr) layer, a silver (Ag) layer, a silver alloy layer (for example, an Ag—Pd—Cu layer) Ag-Sm-Cu layer), for example, electron beam evaporation method, hot filament evaporation method, evaporation method including vacuum evaporation method, sputtering method, CVD method or ion plating method; plating method (electroplating) And lift-off method; laser ablation method; sol-gel method and the like. The transparent upper substrate or the transparent lower substrate provided with the light reflecting portion depends on the material to be formed. For example, a concave portion is formed on the first surface using a stamper, or the concave portion is cut on the first surface. After forming the light reflecting layer on the exposed surface of the recess, the recess can be embedded.

In the display device according to the first aspect or the third aspect of the present invention, for example, the planar shape of the light-emitting region of the light emitting element is rectangular, the length of one side of such a light-emitting region L _p, orthogonal to the one side When the length of the other side is α × L _p (where the coefficient α> 1), the specific number of the plurality of light reflecting portions provided for one light emitting element is the integer part of the coefficient α, or , (Integer part −1 of coefficient α).

  In the display device according to the first aspect or the third aspect of the present invention, the light reflecting portion is constituted by a part of the surface of the rotating body, and the axis of the light reflecting portion that is the rotation axis of the rotating body is defined as the z axis. The cross-sectional shape of the light reflecting part when the light reflecting part is cut in a virtual plane including the z axis is preferably composed of a part of a parabola, but may be composed of other parts. As a rotator, for example, it can be a spherical surface, a spheroid, a paraboloid, a third-order or higher polynomial, a two-leaf line, a three-leaf line, a four-leaf line, a continuous bead, a cochlear line, a regular leaf line, Raids, sprints, likelihood curves, arc lines, catenary lines, saddles, saddles, star-shaped, semi-cubic parabola, Lissajous curves, Arnessy curves, outer cycloids, heart shapes, inner cycloids, clothoid curves, A curved surface obtained by rotating a part of a curve exemplified by a spiral. It is also possible. Moreover, depending on the case, it can also be set as the surface obtained by rotating one line segment, the combination of several line segments, and the combination of a line segment and a curve.

  Examples of the material constituting the lens portion in the display device according to the second aspect or the fourth aspect of the present invention include polymethyl methacrylate resin (PMMA), polycarbonate resin (PC), polyarylate resin (PAR), and polyethylene. Examples thereof include plastics such as terephthalate resin (PET), acrylic resin, and ABS resin, and glass. When the lens unit is composed of a convex lens, the convex lens constituting the lens unit may be a spherical lens, but is more preferably an aspherical lens. The convex lens can be composed of a plano-convex lens, a biconvex lens, and a meniscus convex lens. The lens portion can be formed based on a known method.

In the display device according to the second aspect or the fourth aspect of the present invention, for example, the planar shape of the light emitting region of the light emitting element is rectangular, and the length of one side of the light emitting region is L _p , which is orthogonal to the one side. When the length of the other side is α × L _p (where the coefficient α> 1), as a specific number of a plurality of lens portions provided for one light emitting element, an integer part of the coefficient α, or (Integer part-1 of coefficient α) can be exemplified.

In the display devices according to the first to fifth embodiments of the present invention (hereinafter collectively referred to simply as the display device of the present invention), the plurality of light emitting elements are disposed on the first substrate. Is formed. Here, as the first substrate or as the second substrate, a high strain point glass substrate, soda glass (Na ₂ O · CaO · SiO ₂ ) substrate, borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ). ₂ ) Substrate, forsterite (2MgO · SiO ₂ ) substrate, lead glass (Na ₂ O · PbO · SiO ₂ ) substrate, various glass substrates with an insulating layer formed on the surface, quartz substrate, insulating layer formed on the surface Quartz substrate, silicon substrate with an insulating layer formed on the surface, polymethyl methacrylate (polymethyl methacrylate, PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide, polycarbonate, Organic polymer exemplified by polyethylene terephthalate (PET) (with flexibility composed of polymer material) Plastic films and plastic sheets, the form of polymeric material such as a plastic substrate) may be mentioned. However, in the bottom emission type display device, the first substrate is required to be transparent to light emitted from the light emitting element. In the bottom emission type display device, the first substrate may also serve as the transparent lower substrate. In the case where the first substrate does not also serve as the transparent lower substrate, examples of the material constituting the transparent lower substrate include the materials described above. Moreover, in the display device according to the first aspect to the second aspect of the present invention, examples of the material constituting the transparent upper substrate include the materials described above. The constituent materials of the first substrate and the second substrate, the transparent upper substrate, and the transparent lower substrate may be the same or different.

  Examples of the display device of the present invention include an organic electroluminescence display device (abbreviated as an organic EL display device). When the organic EL display device is a color display organic EL display device, the organic EL display device is configured. A subpixel is constituted by each of the organic EL elements. Here, one pixel is composed of, for example, three types of subpixels: a red light emitting subpixel that emits red light, a green light emitting subpixel that emits green light, and a blue light emitting subpixel that emits blue light. Therefore, in this case, when the number of organic EL elements constituting the organic EL display device is N × M, the number of pixels is (N × M) / 3. Alternatively, examples of the display device of the present invention include a lighting device including a backlight device for a liquid crystal display device and a planar light source device.

  The organic layer includes a light emitting layer made of an organic light emitting material. Specifically, for example, a stacked structure of a hole transport layer, a light emitting layer, and an electron transport layer, and also serves as a hole transport layer and an electron transport layer. It can be comprised from the laminated structure with a light emitting layer, the laminated structure of a positive hole injection layer, a positive hole transport layer, a light emitting layer, an electron carrying layer, and an electron injection layer. As a method for forming an organic layer, a physical vapor deposition method (PVD method) such as a vacuum deposition method; a printing method such as a screen printing method or an ink jet printing method; a lamination of a laser absorption layer and an organic layer formed on a transfer substrate Examples of the laser transfer method and various coating methods include separating the organic layer on the laser absorption layer by irradiating the structure with laser and transferring the organic layer. When the organic layer is formed based on a vacuum evaporation method, for example, a so-called metal mask is used, and the organic layer can be obtained by depositing a material that has passed through an opening provided in the metal mask.

The light reflecting electrode is provided on, for example, an interlayer insulating layer. The interlayer insulating layer covers the light emitting element driving unit formed on the first substrate. The light emitting element driving unit is composed of one or a plurality of thin film transistors (TFTs), and the TFT and the first electrode are electrically connected via a contact plug provided in the interlayer insulating layer. As a constituent material of the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; insulation, such as polyimide Resins can be used alone or in appropriate combination. For the formation of the interlayer insulating layer, known processes such as a CVD method, a coating method, a sputtering method, and various printing methods can be used. In the bottom emission type display device, the interlayer insulating layer needs to be made of a material transparent to the light from the light emitting element, and the light emitting element driving unit does not block the light from the light emitting element. Need to form.

  As described above, it is preferable to provide an insulating or conductive protective film above the organic layer for the purpose of preventing moisture from reaching the organic layer. Forming the protective film based on a film forming method having a low energy of film forming particles, such as a vacuum deposition method, or a film forming method, such as an MOCVD method, can reduce the influence on the base. Therefore, it is preferable. Alternatively, in order to prevent a decrease in luminance due to deterioration of the organic layer, the film forming temperature is set to room temperature, and further, in order to prevent the protective film from peeling off, the protective film is used under the condition that the stress of the protective film is minimized. It is desirable to form a film. In addition, the protective film is preferably formed without exposing the already formed electrode to the atmosphere, whereby the organic layer can be prevented from being deteriorated by moisture or oxygen in the atmosphere. Furthermore, when the display device is a top emission type, it is desirable that the protective film is made of a material that transmits, for example, 80% or more of the light generated in the organic layer, and specifically, an inorganic amorphous insulating property. Examples of materials include the materials described above. Since such an inorganic amorphous insulating material does not generate grains, it has low water permeability and constitutes a good protective film. When the protective film is made of a conductive material, the protective film may be made of a transparent conductive material such as ITO or IZO.

  If necessary, a color filter or a light shielding film (black matrix) may be formed on the transparent upper substrate or the first substrate (transparent lower substrate) through which light from the light emitting element passes.

In the display device according to the first to fourth aspects of the present invention, the problem of a decrease in light extraction efficiency due to total reflection in the light emitting element is solved by including a light reflecting portion and a lens portion, Moreover, in the display devices according to the first to fifth aspects of the present invention, the light interference condition or resonance condition formed by the organic layer, the first electrode, and the second electrode of the light emitting element is set as desired. By satisfying the conditions, L ₁ <L ₂ and m ₁ <m ₂ , that is, by making the maximum light emitting position of the light emitting layer closer to the light reflecting electrode than to the semi-light transmitting electrode, the light extraction efficiency is greatly improved. be able to.

FIG. 1 is a schematic partial cross-sectional view of the display device according to the first embodiment. FIG. 2 is a schematic diagram of a light reflecting portion in the display device according to the first embodiment. 3A is a schematic diagram of an organic layer and the like in the display device of Example 1, and FIG. 3B is a schematic diagram of the organic layer and the like in the display device of Comparative Example 1. FIG. 4 is a conceptual diagram of a light reflecting portion in the display device according to the first embodiment. FIG. 5 is a schematic layout diagram of a light reflecting portion in the display device according to the first embodiment and a lens portion in the display device according to the second embodiment. FIG. 6 is a schematic partial cross-sectional view of the display device according to the second embodiment. FIG. 7 is a schematic diagram of a lens unit in the display device according to the second embodiment. FIG. 8 is a schematic partial cross-sectional view of the display device according to the third embodiment. FIG. 9 is a schematic view of an organic layer and the like in the display device of Example 3. FIG. 10 is a schematic partial cross-sectional view of the display device according to the fourth embodiment. FIG. 11 is a graph showing calculation of light emission energy distribution in the protective film made of silicon nitride (Si _1-x N _x ) in each case of Example 1 and Comparative Example 1. FIG. 12 is a graph obtained by calculating the emission energy distribution of light emitted from the protective film into the adhesive layer in each of Example 1 and Comparative Example 1. FIGS. 13A and 13B are graphs showing the viewing angle dependence of relative luminance in Example 1 and Comparative Example 1, respectively. 14A, 14 </ b> B, and 14 </ b> C are schematic partial end views of the first substrate and the like for explaining the outline of the manufacturing method of the organic electroluminescence display device of Example 1. FIG. FIGS. 15A and 15B are schematic partial views of the first substrate and the like for explaining the outline of the manufacturing method of the organic electroluminescence display device of Example 1 following FIG. 14C. It is an end view. FIG. 16 is a schematic partial end view of the first substrate and the like for explaining the outline of the manufacturing method of the organic electroluminescence display device of Example 1 following FIG. 17A to 17D are schematic partial end views of a glass substrate and the like for explaining an outline of a method for manufacturing a transparent upper substrate having a light reflecting portion.

  Hereinafter, the present invention will be described based on examples with reference to the drawings.

  Example 1 relates to a display device according to the first and fifth aspects of the present invention, specifically, an organic EL display device. FIG. 1 shows a schematic partial cross-sectional view of the display device of Example 1 (hereinafter sometimes referred to as an organic EL display device), FIG. 2 shows a schematic diagram of a light reflecting portion, and a schematic diagram of an organic layer and the like. The figure is shown in FIG. The organic EL display device of Example 1 is an active matrix color display organic EL display device, which is a top emission type. That is, light is emitted through the second electrode corresponding to the upper electrode.

  The organic EL display device of Example 1 or the organic EL display devices of Examples 2 to 4 to be described later includes a plurality of light emitting elements (specifically, organic EL elements) 10 (for example, N × M = 2880 × 540). One light emitting element 10 constitutes one subpixel. Accordingly, the organic EL display device has (N × M) / 3 pixels. Here, one pixel includes three types of sub-pixels: a red light-emitting subpixel that emits red light, a green light-emitting subpixel that emits green light, and a blue light-emitting subpixel that emits blue light.

As shown in FIG. 1 and FIG. 3A, the organic EL display device of Example 1 or Example 2 described later is a display according to the first, second, and fifth aspects of the present invention. If expressed along the device,
(A) The first electrode 21, the organic layer 23 including the light emitting layer 23 </ b> A made of an organic light emitting material, and the second electrode 22 are laminated, and are configured by the interface between the first electrode 21 and the organic layer 23. The light emitted from the light emitting layer 23A is resonated between the first interface 21A and the second interface 22A formed by the interface between the second electrode 22 and the organic layer 23, and a part of the light is emitted from the second electrode 22. A plurality of light emitting elements 10 emitted from
Is a display device.

And if expressed along the display device according to the first aspect or the second aspect of the present invention,
(B) a transparent upper substrate 33 having a first surface 33A facing the second electrode 22 and a second surface 33B facing the first surface 33A and fixed above the second electrode 22;
It has.

More specifically, each light emitting element (organic EL element) 10 in the organic EL display device of Example 1 or Example 2 to Example 4 to be described later is:
(A) the first electrode 21,
(B) an insulating layer 24 having an opening 25 and the first electrode 21 exposed at the bottom of the opening 25;
(C) an organic layer 23 provided at least on the portion of the first electrode 21 exposed at the bottom of the opening 25 and having a light emitting layer made of an organic light emitting material; and
(D) the second electrode 22,
It has.

  In Example 1 or Example 2 described later, the first electrode 21 is used as an anode electrode, and the second electrode 22 is used as a cathode electrode. The first electrode 21 is made of a light reflecting material, specifically, an Al—Nd alloy, and the second electrode 22 is a semi-light transmitting material, specifically, a conductive material containing magnesium (Mg), more specifically. Is made of a Mg-Ag alloy having a thickness of 10 nm. The first electrode 21 is formed based on a combination of a vacuum deposition method and an etching method. The second electrode 22 is formed by a film forming method in which the energy of film forming particles is small, such as a vacuum evaporation method. Table 1 below shows the refractive index measurement results of the first electrode 21 and the second electrode 22, the light reflectance measurement results of the first electrode 21, and the light transmittance measurement results of the second electrode 22. The measurement is a result obtained at a wavelength of 530 nm.

  In Example 1 or Examples 2 to 4 to be described later, the insulating layer 24 is excellent in flatness and has a water absorption rate in order to prevent deterioration of the organic layer 23 due to moisture and maintain light emission luminance. It is made of a low insulating material, specifically, a polyimide resin. Furthermore, although the organic layer 23 is comprised from the laminated structure of the light emitting layer which served as the positive hole transport layer and the electron carrying layer, for example, it may represent with one layer in drawing.

In Example 1 or Examples 2 to 4 to be described later, the first electrode 21 constituting the organic EL element is composed of an interlayer insulating layer 16 (more specifically, an upper layer) made of SiO ₂ formed based on the CVD method. It is provided on the interlayer insulating layer 16B). The interlayer insulating layer 16 covers the organic EL element driving unit formed on the first substrate 11. The organic EL element driving unit is composed of a plurality of TFTs, and the TFT and the first electrode 21 include a contact plug 18 provided in an interlayer insulating layer (more specifically, an upper interlayer insulating layer 16B), a wiring 17, electrically connected via a contact plug 17A. In the drawing, one TFT is shown for one organic EL element driving unit. The TFT includes a gate electrode 12 formed on the first substrate 11, a gate insulating film 13 formed on the first substrate 11 and the gate electrode 12, and a source provided on a semiconductor layer formed on the gate insulating film 13. The portion of the semiconductor layer located between the / drain region 14 and the source / drain region 14 and above the gate electrode 12 is constituted by a corresponding channel forming region 15. In the illustrated example, the TFT is a bottom gate type, but may be a top gate type. The gate electrode 12 of the TFT is connected to a scanning circuit (not shown).

In Example 1 or Examples 2 to 4 to be described later, silicon nitride (Si _1-x N) is formed on the second electrode 22 on the basis of vacuum deposition for the purpose of preventing moisture from reaching the organic layer 23. _An insulating protective film 31 made of _x ) is provided. A transparent upper substrate (second substrate in the fifth aspect of the present invention) 33 is disposed on the protective film 31. The protective film 31 and the transparent upper substrate 33 are made of an adhesive layer made of an acrylic adhesive. 32 is adhered. The refractive index measurement results of the protective film 31 and the adhesive layer 32 are shown in Table 1 below. The refractive index is a measurement result at a wavelength of 530 nm.

[Table 1]
Refractive index of first electrode 21 Real part: 0.755
Imaginary part: 5.466
Refractive index of second electrode 22 Real part: 0.617
Imaginary part: 3.904
Light reflectance of the first electrode 21: 85
Light transmittance of second electrode 22: 57%
Refractive index of protective film 31 Real part: 1.87
Imaginary part: 0
Refractive index of adhesive layer 32 Real part: 1.53
Imaginary part: 0

  In Example 1 or Examples 2 to 4 described later, the first substrate 11, the transparent upper substrate 33, the second substrate, or the transparent lower substrate 35 described later is made of soda glass.

In Example 1 or Example 2 to be described later, as shown in FIG. 3A, the distance from the maximum light emission position of the light emitting layer 23A to the first interface 21A is L ₁ , the optical distance is OL ₁ , and light emission. distance L ₂ from the maximum emission position of the layer 23A to the second surface 22A, the optical distance to the OL _2, when the m ₁ and m ₂ is an integer, the following formulas (1-1), the formula (1-2 ), Formula (1-3) and formula (1-4) [or formula (3-1), formula (3-2), formula (3-3) and formula (3-4)].

0.7 {−Φ ₁ / (2π) + m ₁ } ≦ 2 × OL ₁ /λ≦1.2{−Φ ₁ / (2π) + m ₁ } (1-1), (3-1)
_{0.7 {-Φ 2 / (2π)} + m 2} ≦ 2 × OL 2 /λ≦1.2{-Φ 2 / (2π) + m 2} (1-2), (3-2)
L ₁ <L ₂ (1-3), (3-3)
m ₁ <m ₂ (1-4), (3-4)

here,
λ: Maximum peak wavelength of the spectrum of light generated in the light emitting layer 23A (Alternatively, a desired wavelength of light generated in the light emitting layer 23A)
Φ ₁ : Phase shift amount of reflected light generated at the first interface 21A (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface 22A (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

In the organic EL display device of Example 1, the light is emitted from the first surface 33A of the transparent upper substrate 33 through the second electrode 22 through the first surface 33A and is incident on the transparent upper substrate 33. A light reflecting portion (reflector portion) 40 that reflects part of the light and emits from the second surface 33B of the transparent upper substrate 33 is formed. As shown in a schematic layout diagram in FIG. 5, the arrangement of the plurality of light emitting elements 10 is a stripe arrangement, and a plurality of light reflecting portions 40 are provided for one light emitting element 10. Specifically, the planar shape of the light emitting region of the light emitting element 10 is a rectangle, the length of one side of the light emitting region is L _p , and the length of the other side orthogonal to the one side is α × L _p (where When the coefficient α> 1, and in the first embodiment, α = 3), the specific number of the plurality of light reflecting portions 40 provided for one light emitting element 10 is expressed by the coefficient α. The integer part, that is, “3” was used.

  Specifically, the light reflecting portion 40 is composed of a light reflecting layer made of an Al—Nd layer. The light reflecting portion 40 is formed, for example, by forming a recess 41 on the first surface 33A of the transparent upper substrate 33 based on cutting, and a light reflecting layer is formed on the exposed surface of the recess 41 based on, for example, a vacuum deposition method. Thereafter, the concave portion 41 can be manufactured by a method of embedding with a filling material 42 made of an acrylic resin, for example. Instead of using the filling material 42, the concave portion 41 may be embedded at the same time as the transparent upper substrate 33 is bonded by the adhesive layer 32.

In the organic EL display device of Example 1, as shown in the schematic diagram of the light reflecting portion in FIG. 2 and the conceptual diagram in FIG. 4, the light reflecting portion 40 is configured from a part of the surface of the rotating body. Has been. The lower end portion 40A of the light reflecting portion 40 is located in the first surface 33A of the transparent upper substrate 33, the upper end portion 40B of the light reflecting portion 40 is located inside the transparent upper substrate 33, and the transparent upper substrate. 33 is parallel to the second surface 33B. Here, the axis of the light reflecting portion 40 that is the rotation axis of the rotating body is the z axis, the radius of the lower end portion 40A of the light reflecting portion 40 is r _Ref-B , and the radius of the upper end portion 40B of the light reflecting portion 40 is r _{Ref. -T} , when the distance along the z-axis from the lower end 40A to the upper end 40B of the light reflecting portion 40 is L _Ref and the refractive index of the transparent upper substrate is n _Sub-T ,
(R _Ref-T + r _Ref-B ) / L _Ref ≦ (n _Sub-T ² −1) ^−1/2
Is satisfied. Specific numerical values of L _Ref , r _Ref-T , and r _Ref-B are illustrated in Table 2 below.

In this case, the cross-sectional shape of the light reflecting portion 40 when the light reflecting portion 40 is cut along a virtual plane including the z axis is a part of a parabola. Here, the perpendicular drawn from the focal point of the parabola to the quasi-line is inclined with respect to the z axis, and when the light reflecting portion 40 is cut at this virtual plane, the virtual plane and the lower end portion 40A of the light reflecting portion 40 are separated. When the distance from the intersecting point to the focal point of the parabola is L _Focus ,
0.1 ≦ r _Ref-B / L _Focus <0.5
Is satisfied. Furthermore, the inclination angle θ _{Para with} respect to the z-axis of the perpendicular drawn from the parabolic focus to the quasi-line, when the refractive index of the transparent upper substrate 33 is n _Sub-T ,
sin (θ _Para ) <1 / n _Sub-T
Is satisfied. The focal point of the parabola is included in the first surface 33A of the transparent upper substrate 33. Here, assuming a Gaussian coordinate with the perpendicular drawn from the parabolic focus to the quasi-line as the Y ′ axis and the vertical bisector of the line segment perpendicular to the quasi-line from the parabolic focus as the X ′ axis, The parabola equation is, for example, when the pixel pitch is 100 μm.
y ′ = 3.57 × 10 ⁻³ · x ′ ²
Can be expressed as

In addition, when the shape of the light reflecting portion 40 is analyzed, even when the value of y ′ varies within a range of ± 5 μm from the parabolic equation y ′ = k · x ′ ² (where k is a constant), Such a shape is included in the parabola. The same applies to Example 3 described later.

Alternatively, in the organic EL display device according to the first embodiment, the light reflecting portion 40 is configured by a part of the surface of the rotating body, and the lower end portion 40A of the light reflecting portion 40 is within the first surface 33A of the transparent upper substrate 33. The upper end portion 40 </ b> B of the light reflecting portion 40 is positioned inside the transparent upper substrate 33 and is parallel to the second surface 33 </ b> B of the transparent upper substrate 33. The axis of the light reflecting portion 40 that is the rotation axis of the rotating body is the z axis, and the z axis is formed on the second electrode 22 side of the light emitted from the second electrode 22 at the point where the z axis intersects the second electrode 22. When the angle is θ _O-2 and the refractive index of the transparent upper substrate 33 is n _Sub-T ,
sin (θ _O-2 )> 1 / n _Sub-T
Satisfied.

[Table 2]
L _Ref : 81 (μm)
r _Ref-T : 50 (μm)
r _Ref-B : 30.6 (μm)
L _Focus : 42 (μm)
theta _Para: 41.8 degrees θ _O-2: 41.8 degrees n _Sub-T: 1.5

  In Example 1 or Example 2 to be described later, each organic layer 23 specifically includes a red light-emitting organic layer in a red light-emitting organic EL element constituting a red light-emitting subpixel and a green light-emitting organic material constituting a green light-emitting subpixel. It is comprised from the green light emitting organic layer in an EL element, and the blue light emitting organic layer in the blue light emitting organic EL element which comprises a blue light emission subpixel.

Specifically, the red light emitting organic layer is from the first electrode side,
[Hole injection layer] (thickness 10 nm): LG Chemical manufactured by LG Chemical
[Hole transport layer] (thickness 26 nm): HT320 manufactured by Idemitsu Kosan Co., Ltd.
[Light emitting layer] (thickness 50 nm): RH001 manufactured by Idemitsu Kosan Co., Ltd.
D125 (0.5% dope) manufactured by Toray Industries, Inc.
[Electron transport layer] (thickness 220 nm): ET085 manufactured by Idemitsu Kosan Co., Ltd.
It is composed of The maximum light emission position exists at the interface between the electron transport layer and the light emitting layer.

The green light emitting organic layer is from the first electrode side,
[Hole injection layer] (thickness 10 nm): LG Chemical manufactured by LG Chemical
[Hole transport layer] (thickness 35 nm): HT320 manufactured by Idemitsu Kosan Co., Ltd.
[Light emitting layer] (thickness 30 nm): BH232 manufactured by Idemitsu Kosan Co., Ltd. and
GD206 (10% dope)
[Electron transport layer] (thickness 175 nm): ETS085 manufactured by Idemitsu Kosan Co., Ltd.
It is composed of The maximum light emission position exists at the interface between the hole transport layer and the light emitting layer.

Furthermore, the blue light emitting organic layer is from the first electrode side,
[Hole injection layer] (thickness 10 nm): LG Chemical manufactured by LG Chemical
[Hole transport layer] (thickness 24 nm): HT320 manufactured by Idemitsu Kosan Co., Ltd.
[Light emitting layer] (thickness 30 nm): BH232 manufactured by Idemitsu Kosan Co., Ltd. and
BD218 (10% dope)
[Electron transport layer] (thickness 141 nm): ET085 manufactured by Idemitsu Kosan Co., Ltd.
It is composed of The maximum light emission position exists at the interface between the hole transport layer and the light emitting layer.

Λ, L ₁ , OL ₁ , 2OL ₁ / λ, L ₂ , OL ₂ , 2OL ₂ / λ, n _ave , {−2Φ ₁ / (2π) in the red light emitting organic layer, green light emitting organic layer and blue light emitting organic layer The values of + m ₁ }, {−2Φ ₂ / (2π) + m ₂ } are illustrated in Table 3 below. However, m ₁ = 0 and m ₂ = 1.

[Table 3]

Hereinafter, the detail regarding the light emitting element 10 of the organic electroluminescence display of Example 1 is demonstrated. Here, in order to compare with the conditions of m ₁ = 0 and m ₂ = 1 in Example 1, a light emitting element having conditions of m ₁ = 1 and m ₂ = 0 is considered as Comparative Example 1. A schematic diagram of an organic layer and the like of the light emitting element of Comparative Example 1 is shown in FIG. That is, as shown in FIGS. 3A and 3B, in Example 1, light is emitted near the first interface, and in Comparative Example 1, light is emitted near the second interface.

FIG. 11 shows the calculation result of the light emission energy distribution in the protective film 31 made of silicon nitride (Si _1-x N _x ) in each case of Example 1 and Comparative Example 1 in the green light emitting device. The emission energy distribution obtained in Example 1 is indicated by a curve “A”, and the emission energy distribution obtained in Comparative Example 1 is indicated by a curve “B”. Note that the horizontal axis of FIG. 11 is an angle formed with the normal of the top surface of the protective film 31 when light traveling in the protective film 31 collides with the top surface of the protective film 31. For convenience, this angle is referred to as “advancing angle in the protective film”. The light emission energy distribution is calculated for each wavelength after calculating the light extraction efficiency into the desired medium due to resonance (interference) for each wavelength and multiplying the light emission intensity in the medium to obtain the light intensity in the desired medium. It can be obtained by integrating over a range and calculating the total energy at a specific angle.

Incidentally, the refractive index of silicon nitride (Si _1-x N _x ) is about 1.8, and the refractive index of the transparent upper substrate 33 is about 1.45. Accordingly, from FIG. 11, light having a traveling angle of up to about 34 degrees in the protective film is emitted from the protective film 31 to the air via the transparent upper substrate 33 without providing a light reflecting portion or a lens portion described later. It can be light. On the other hand, light with a traveling angle of 34 to 53 degrees in the protective film is incident on the adhesive and the transparent upper substrate 33 from the protective film 31, but causes total reflection at the interface between the transparent upper substrate 33 and air. This is light that cannot be emitted into the air. Further, the light of 53 degrees or more causes total reflection at the interface between the protective film and the adhesive and cannot enter the adhesive and the transparent upper substrate 33. Therefore, the light whose path is bent by the light reflecting portion or the lens portion described later and contributes to the improvement of the light extraction efficiency is light having a traveling angle of 34 degrees to 53 degrees in the protective film.

From FIG. 11, in the case of light with a traveling angle in the protective film ranging from 34 degrees to 53 degrees, the light emission energy distribution of Example 1 is significantly higher than that of Comparative Example 1. . Accordingly, the provision of the light reflecting portion and the lens portion increases the amount of the light emitted from the transparent upper substrate 33 (the energy of light that can be extracted) in the first embodiment compared to the first comparative example. When considering the overall cavity effect, the interference effect (order m ₁ ) on the first interface side and the interference effect (order m ₂ ) on the second interface side, as well as m = 1 cavity effect at both ends of the reflective interface. It was found that it is necessary to consider that the three modes are overlapped. That is, when the interference orders m ₁ and m ₂ are 0, the light is intensified only in the normal direction, and there is no condition for intensifying in the other directions. On the other hand, when m ₁ and m ₂ are 1, in addition to the normal direction, the conditions are intensifying even in an oblique direction of 62 ° to 64 °, and the light reflecting portion (reflector portion) cannot be taken out into the air. Light energy will increase. Since the effect of interference increases as the reflectance increases, the amount of light that can be extracted by the light reflecting portion (reflector portion) can be increased by lowering the order of interference on the high reflectance side.

  FIG. 12 shows the result of calculating the emission energy distribution of the light emitted from the protective film 31 into the adhesive layer (refractive index about 1.5) 32 for accurate estimation. The emission energy distribution obtained in Example 1 is indicated by a curve “A”, and the emission energy distribution obtained in Comparative Example 1 is indicated by a curve “B”. When it is assumed that all the light emitted from the adhesive layer 32 by the light reflecting portion or the lens portion can be emitted into the air, the first embodiment is about 1.4 times as large as the first comparative example. The light energy of can be taken out.

  Therefore, when an organic EL light emitting device is configured in combination with a light reflecting portion or a lens portion that improves light extraction efficiency, light is emitted on the side closer to the light reflecting electrode having a high reflectivity, and an appropriate resonance or interference condition is selected. As a result, the extracted light energy can be significantly increased, and the power consumption can be reduced. Alternatively, as shown in FIGS. 13A and 13B, an organic EL display device having excellent viewing angle characteristics can be realized even though the luminance in the normal direction (the luminance at a viewing angle of 0 degrees) is the same. it can. 13A shows the relative luminance in Example 1. In FIG. 13A, the curve “A” is data of the organic EL display device including the light reflecting portion 40, and the curve “A ′” indicates data of an organic EL display device that does not include the light reflecting portion 40 for reference. 13B shows the relative luminance in Comparative Example 1. In FIG. 13B, the curve “B” is data of the organic EL display device including the light reflecting portion 40, and the curve “B ′” indicates data of an organic EL display device that does not include the light reflecting section 40 for reference. The graphs of FIGS. 13A and 13B perform the tracking simulation of the light ray incident on the light reflecting portion according to the emission energy distribution obtained in FIG. 12, and finally pass through the light reflecting portion. It is the graph obtained by calculating energy angle distribution radiate | emitted in the air, and converting into brightness | luminance.

For comparison, a prototype organic EL display device having a light reflecting portion is _{r Ref-B = L Focus /} 2 ( Comparative Example 2). A light reflecting portion that satisfies such a condition is called a compound parabolic concentrator (CPC). In addition, an organic EL display device having a light reflecting portion in which a perpendicular drawn from a parabolic focus to a quasi-line coincides with the z-axis was manufactured (Comparative Example 3). The values of L _Ref , r _Ref-T , and r _Ref-B in Comparative Example 2 and Comparative Example 3 were the same as those in Example 1. The light extraction energy in Example 1, the value of front luminance (luminance at a viewing angle of 0 degree), and the values of Comparative Example 2 and Comparative Example 3 when the luminance at a viewing angle of 45 degrees is set to 1.00 are as follows. Table 4 shows.

[Table 4]
Example 1 Comparative Example 2 Comparative Example 3
Light extraction energy 1.00 0.88 0.75
Luminance at a viewing angle of 0 degree 1.00 0.84 0.95
Luminance at a viewing angle of 45 degrees 1.00 0.95 0.75

  Example 2 relates to a display device according to the second and fifth aspects of the present invention, specifically, an organic EL display device. A schematic partial cross-sectional view of the organic EL display device of Example 2 is shown in FIG. 6, and a schematic diagram of the lens portion is shown in FIG. The conceptual diagram of the organic layer is the same as that shown in FIG. The organic EL display device of Example 2 is also an active matrix color display organic EL display device and is a top emission type. That is, light is emitted through the second electrode corresponding to the upper electrode.

In the organic EL display device of Example 2, the lens unit 50 through which the light emitted from the light emitting layer 23A through the second electrode 22 passes is formed on the first surface 33A of the transparent upper substrate 33. . Similarly to the schematic layout shown in FIG. 5, the arrangement of the plurality of light emitting elements 10 is a stripe arrangement, and a plurality of lens portions 50 are provided for one light emitting element 10. Specifically, the planar shape of the light emitting region of the light emitting element 10 is a rectangle, the length of one side of the light emitting region is L _p , and the length of the other side orthogonal to the one side is α × L _p (where When the coefficient α> 1 and α = 3) in the first embodiment, the specific number of the plurality of lens portions 50 provided for one light emitting element 10 is an integer of the coefficient α. Part, ie, “3”. The lens unit 50 is composed of a plano-convex lens (aspheric lens), and is formed by a known method. The same applies to Example 4 to be described later.

In the organic EL display device of Example 2, as shown in the schematic diagram of the light reflecting portion in FIG. 7, the lens portion 50 is formed of a convex lens. The angle formed with the z-axis on the second electrode 22 side of the light emitted from the second electrode 22 at the point where the z-axis intersects with the second electrode 22 is defined as θ _O where the axis of the lens unit 50 that is the optical axis is the z-axis. _-2 , When the refractive index of the transparent upper substrate 33 is n _Sub-T ,
sin (θ _O-2 )> 1 / n _Sub-T
Is satisfied. Incidentally, theta _O-2 values, and the value of n _Sub-T is as shown in Table 2.

  Example 3 relates to a display device according to the third aspect of the present invention, specifically, an organic EL display device. FIG. 8 shows a schematic partial cross-sectional view of the organic EL display device of Example 3, and FIG. 9 shows a conceptual diagram of the organic layer and the like. The organic EL display device of Example 3 is also an active matrix color display organic EL display device, but is a bottom emission type. That is, light is emitted through the first electrode corresponding to the lower electrode.

The organic EL display device of Example 3 or Example 4 to be described later is
(A) a first lower surface 11A and a transparent lower substrate having a second surface 11B opposite to the first surface 11A (in Example 3, the first substrate 11 also serves), and
(B) A first electrode 21, an organic layer 23 including a light emitting layer 23A made of an organic light emitting material, and a second electrode 22 are stacked on the first surface 11A of the transparent lower substrate (first substrate 11). Light emission between the first interface 21A constituted by the interface between the first electrode 21 and the organic layer 23 and the second interface 22A constituted by the interface between the second electrode 22 and the organic layer 23. A plurality of light-emitting elements 10 that resonate the light emitted from the layer 23A and emit part of the light from the first electrode 21;
Is a display device.

  In the bottom emission type display device of Example 3 or Example 4 to be described later, the interlayer insulating layer 16 needs to be made of a material that is transparent to the light from the light emitting element 10 and emits light. The element driving unit needs to be formed so as not to block light from the light emitting element 10. 8 and 10, the light emitting element driving unit is not shown. Further, the protective film 31 and the second substrate 34 are bonded by an adhesive layer 32 made of an acrylic adhesive.

  In Example 3 or Example 4 described later, the second electrode 22 is used as an anode electrode, and the first electrode 21 is used as a cathode electrode. The second electrode 22 is made of a light reflecting material, specifically, an Al—Nd alloy, and the first electrode 21 is a semi-light transmitting material, specifically, a conductive material containing magnesium (Mg), more specifically. Is made of a Mg-Ag alloy having a thickness of 10 nm. The second electrode 22 is formed by a film forming method in which the energy of film forming particles is small, such as a vacuum vapor deposition method. The first electrode 21 is formed based on a combination of a vacuum deposition method and an etching method. The refractive index measurement results of the first electrode 21 and the second electrode 22, the average light reflectance measurement result of the first electrode 21, and the average light transmittance measurement result of the second electrode 22 are the same as those shown in Table 1. However, in Table 1, “first electrode 21” is read as “second electrode 22”, and “second electrode 22” is read as “first electrode 21”.

In Example 3 or Example 4 to be described later, as shown in FIG. 9, the distance from the maximum light emission position of the light emitting layer 23A to the first interface 21A is L ₁ , the optical distance is OL ₁ , and the maximum of the light emitting layer 23A is reached. the distance from the emission position to the second surface 22A L _2, the optical distance to the OL _2, when the m ₁ and m ₂ is an integer, the following formulas (2-1), (2-2), the formula ( 2-3) and formula (2-4) are satisfied.

_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (2-1)
_{0.7 {-Φ 2 / (2π)} + m 2} ≦ 2 × OL 2 /λ≦1.2{-Φ 2 / (2π) + m 2} (2-2)
L ₁ > L ₂ (2-3)
m ₁ > m ₂ (2-4)
here,
λ: Maximum peak wavelength of the spectrum of light generated in the light emitting layer 23A (Alternatively, a desired wavelength of light generated in the light emitting layer 23A)
Φ ₁ : Phase shift amount of reflected light generated at the first interface 21A (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface 22A (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

In the organic EL display device of Example 3, the transparent lower substrate (first substrate 11) is emitted from the first surface 11A to the inside, emitted from the light emitting layer 23A via the first electrode 21, and the transparent lower substrate. A light reflecting portion (reflector portion) 60 is formed that reflects part of the light incident on the substrate (first substrate 11) and emits the light from the second surface 11B of the transparent lower substrate (first substrate 11). Similarly to the schematic layout shown in FIG. 5, the arrangement of the plurality of light emitting elements 10 is a stripe arrangement, and a plurality of light reflecting portions 60 are provided for one light emitting element 10. Specifically, the planar shape of the light emitting region of the light emitting element 10 is a rectangle, the length of one side of the light emitting region is L _p , and the length of the other side orthogonal to the one side is α × L _p (where When the coefficient α> 1 and in the third embodiment, α = 3), the specific number of the plurality of light reflecting portions 60 provided for one light emitting element 10 is expressed by the coefficient α. The integer part, that is, “3” was used.

  Specifically, the light reflecting portion 60 is composed of a light reflecting layer made of an Al—Nd layer. For example, the light reflecting portion 60 is formed by forming a recess 61 on the eleventh first surface 11A based on cutting, and after forming a light reflecting layer on the exposed surface of the recess 61 based on, for example, a vacuum deposition method. The concave portion 61 can be manufactured by, for example, a method of filling with the filling material 62 made of acrylic resin or the gate insulating film 13.

In the organic EL display device according to the third embodiment, the light reflecting unit 60 is configured by a part of the surface of the rotating body. And the lower end part 60A of the light reflection part 60 is located in the 1st surface 11A of a transparent lower substrate (1st board | substrate 11), and the upper end part 60B of the light reflection part 60 is a transparent lower board | substrate (1st board | substrate 11). It is located inside and is parallel to the second surface 11B of the transparent lower substrate (first substrate 11). Here, the axis of the light reflecting portion 60 that is the rotation axis of the rotating body is the z axis, the radius of the lower end portion 60A of the light reflecting portion 60 is r _Ref-B , and the radius of the upper end portion 60B of the light reflecting portion 60 is r _{Ref. -T} , when the distance along the z-axis from the lower end 60A to the upper end 60B of the light reflecting portion 60 is L _Ref and the refractive index of the transparent upper substrate is n _Sub-T ,
(R _Ref-T + r _Ref-B ) / L _Ref ≦ (n _Sub-T ² −1) ^−1/2
Is satisfied. Specific numerical values of L _Ref , r _Ref-T , and r _Ref-B are as shown in Table 2.

In this case, as shown in FIG. 4, the cross-sectional shape of the light reflecting portion 60 when the light reflecting portion 60 is cut in a virtual plane including the z axis is a part of a parabola. Here, the perpendicular drawn from the focal point of the parabola to the quasi-line is inclined with respect to the z axis, and the virtual plane and the lower end portion 60A of the light reflection unit 60 when the light reflection unit 60 is cut in this virtual plane. When the distance from the intersecting point to the focal point of the parabola is L _Focus ,
0.1 ≦ r _Ref-B / L _Focus <0.5
Is satisfied. Furthermore, the inclination angle θ _{Para with} respect to the z-axis of the perpendicular drawn from the parabolic focus to the quasi-line, when the refractive index of the transparent lower substrate (first substrate 11) is n _Sub-B ,
sin (θ _Para ) <1 / n _Sub-B
Is satisfied. The focal point of the parabola is included in the first surface 11A of the transparent lower substrate (first substrate 11). Here, assuming a Gaussian coordinate with the perpendicular drawn from the parabolic focus to the quasi-line as the Y ′ axis and the vertical bisector of the line segment perpendicular to the quasi-line from the parabolic focus as the X ′ axis, The parabola equation is, for example, when the pixel pitch is 100 μm.
y ′ = 3.57 × 10 ⁻³ · x ′ ²
Can be expressed as

Alternatively, in the organic EL display device according to the third embodiment, the light reflecting portion 60 is configured by a part of the surface of the rotating body, and the lower end portion 60A of the light reflecting portion 60 is the transparent lower substrate (first substrate 11). Located in the first surface 11A, the upper end portion 60B of the light reflecting portion 60 is located inside the transparent lower substrate (first substrate 11), and the second surface 11B of the transparent lower substrate (first substrate 11). Parallel. The axis of the light reflecting portion 60 that is the rotation axis of the rotating body is defined as the z axis, and the z axis is formed on the first electrode 21 side of the light emitted from the first electrode 21 at the point where the z axis intersects the first electrode 21. When the angle is θ _O-1 and the refractive index of the transparent lower substrate (first substrate 11) is n _Sub-B ,
sin (θ _O-1 )> 1 / n _Sub-B
Satisfied.

  Also in Example 3 or Example 4 to be described later, each organic layer 23, specifically, the red light emitting organic EL element constituting the red light emitting subpixel and the green light emitting constituting the green light emitting subpixel. It is comprised from the green light emission organic layer in the organic EL element, and the blue light emission organic layer in the blue light emission organic EL element which comprises a blue light emission subpixel. The red light-emitting organic layer, the green light-emitting organic layer, and the blue light-emitting organic layer are stacked in the reverse order except that the red light-emitting organic layer, the green light-emitting organic layer, and the blue light-emitting organic layer are described in Example 1. Since it can be the same as the layered structure of the layers, detailed description is omitted.

Λ, L ₁ , OL ₁ , 2OL ₁ / λ, L ₂ , OL ₂ , 2OL ₂ / λ, n _ave , {−2Φ ₁ / (2π) in the red light emitting organic layer, green light emitting organic layer and blue light emitting organic layer The values of + m ₁ }, {−2Φ ₂ / (2π) + m ₂ } are as shown in Table 3. However, m ₁ = 1 and m ₂ = 0.

  Example 4 relates to a display device according to the fourth aspect of the present invention, specifically, an organic EL display device. A schematic partial cross-sectional view of the organic EL display device of Example 4 is shown in FIG. The conceptual diagram of the organic layer is the same as that shown in FIG. The organic EL display device of Example 4 is also an active matrix color display organic EL display device, and is a bottom emission type. That is, light is emitted through the first electrode corresponding to the lower electrode.

In the organic EL display device according to the fourth embodiment, unlike the third embodiment, the first substrate 11 and the transparent lower substrate 35 are bonded via an adhesive layer 36, and the light emitting element 10 includes the transparent lower substrate. 35 is provided above the first surface 35A. A lens portion 70 through which light emitted from the light emitting layer 23A through the first electrode 21 passes is formed on the first surface 35A of the transparent lower substrate 35. Similarly to the schematic layout shown in FIG. 5, the arrangement of the plurality of light emitting elements 10 is a stripe arrangement, and a plurality of lens portions 70 are provided for one light emitting element 10. Specifically, the planar shape of the light emitting region of the light emitting element 10 is a rectangle, the length of one side of the light emitting region is L _p , and the length of the other side orthogonal to the one side is α × L _p (where When the coefficient α> 1 and α = 3) in the first embodiment, the specific number of the plurality of lens portions 70 provided for one light emitting element 10 is an integer of the coefficient α. Part, ie, “3”.

In the organic EL display device according to the fourth embodiment, the lens unit 70 includes an aspherical convex lens. An axis formed by the z axis on the first electrode 21 side of the light emitted from the first electrode 21 at the point where the z axis is the z axis is the axis of the lens unit 70 that is an optical axis, and θ _{O -1} , When the refractive index of the transparent lower substrate 35 is n _Sub-B ,
sin (θ _O-1 )> 1 / n _Sub-B
Is satisfied. The values of θ _O-1 and n _Sub-B are as shown in Table 2.

  Hereinafter, the outline of the manufacturing method of the organic EL display device of Example 1 will be described with reference to FIGS. 14A to 14C, FIGS. 15A to 15B, and FIG.

[Step-100]
First, a TFT for each subpixel is formed on the first substrate 11 by a known method. The TFT includes a gate electrode 12 formed on the first substrate 11, a gate insulating film 13 formed on the first substrate 11 and the gate electrode 12, and a source provided on a semiconductor layer formed on the gate insulating film 13. The portion of the semiconductor layer located between the / drain region 14 and the source / drain region 14 and above the gate electrode 12 is constituted by a corresponding channel forming region 15. In the illustrated example, the TFT is a bottom gate type, but may be a top gate type. The gate electrode 12 of the TFT is connected to a scanning circuit (not shown). Next, a lower interlayer insulating layer 16A made of SiO _{2 is} formed on the first substrate 11 so as to cover the TFT by the CVD method, and then the lower interlayer insulating layer 16A is formed based on the photolithography technique and the etching technique. An opening 16 ′ is formed (see FIG. 14A).

[Step-110]
Next, a wiring 17 made of aluminum is formed on the lower interlayer insulating layer 16A based on a combination of a vacuum deposition method and an etching method. The wiring 17 is electrically connected to the source / drain region 14 of the TFT via a contact plug 17A provided in the opening 16 ′. The wiring 17 is connected to a signal supply circuit (not shown). Then, an upper interlayer insulating layer 16B made of SiO _{2 is} formed on the entire surface by the CVD method. Next, an opening 18 ′ is formed on the upper interlayer insulating layer 16B based on the photolithography technique and the etching technique (see FIG. 14B).

[Step-120]
Thereafter, a first electrode 21 made of an Al—Nd alloy is formed on the upper interlayer insulating layer 16B based on a combination of a vacuum deposition method and an etching method (see FIG. 14C). The first electrode 21 is electrically connected to the wiring 17 via the contact plug 18 provided in the opening 18 ′.

[Step-130]
Next, an insulating layer 24 having an opening 25 and having the first electrode 21 exposed at the bottom of the opening 25 is formed on the interlayer insulating layer 16 including the first electrode 21 (see FIG. 15A). . Specifically, an insulating layer 24 made of polyimide resin having a thickness of 1 μm is formed on the interlayer insulating layer 16 and on the periphery of the first electrode 21 based on a spin coating method and an etching method. The insulating layer 24 surrounding the opening 25 preferably forms a gentle slope.

[Step-140]
Next, the organic layer 23 is formed over the portion of the insulating layer 24 surrounding the opening 25 from the portion of the first electrode 21 exposed at the bottom of the opening 25 (see FIG. 15B). Note that the organic layer 23 is formed by sequentially laminating, for example, a hole transport layer made of an organic material and a light emitting layer that also serves as an electron transport layer. Specifically, the insulating layer 24 is used as a kind of spacer, and a metal mask (not shown) for forming the organic layer 23 constituting each subpixel is formed on the insulating layer 24 on the protruding portion of the insulating layer 24. The organic material is vacuum-deposited based on resistance heating in a state where it is placed on the substrate. The organic material passes through the opening provided in the metal mask, and from above the portion of the first electrode 21 exposed at the bottom of the opening 25 constituting the subpixel, above the portion of the insulating layer 24 surrounding the opening 25. Accumulate over time.

[Step-150]
Thereafter, the second electrode 22 is formed over the entire display area (see FIG. 16). The second electrode 22 covers the entire surface of the organic layer 23 constituting the N × M organic EL elements. However, the second electrode 22 is insulated from the first electrode 21 by the organic layer 23 and the insulating layer 24. The second electrode 22 is formed on the basis of a vacuum deposition method, which is a film forming method in which the energy of the film forming particles is small enough not to affect the organic layer 23. Further, the second electrode 22 is continuously formed in the same vacuum deposition apparatus as the formation of the organic layer 23 without exposing the organic layer 23 to the atmosphere, whereby the organic layer 23 due to moisture or oxygen in the atmosphere. Can be prevented. Specifically, the second electrode 22 can be obtained by forming a co-deposited film of Mg—Ag (volume ratio 10: 1) to a thickness of 10 nm.

[Step-160]
Next, an insulating protective film 31 made of silicon nitride (Si _1-x N _x ) is formed on the second electrode 22 based on a vacuum deposition method. The formation of the protective film 31 is continuously performed in the same vacuum deposition apparatus as the formation of the second electrode 22 without exposing the second electrode 22 to the atmosphere, so that the organic layer 23 due to moisture or oxygen in the atmosphere. Can be prevented. Thereafter, the protective film 31 and the transparent upper substrate 33 are bonded by an adhesive layer 32 made of an acrylic adhesive. Finally, an organic EL display device can be completed by connecting to an external circuit.

  The organic EL display devices in Examples 2 to 4 can also be manufactured by substantially the same method.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to this Example. The configurations and structures of the organic EL display device and the organic EL element in the examples, the materials constituting the organic EL display device and the organic EL element are examples, and can be appropriately changed. In the third embodiment, a transparent lower substrate may be provided separately from the first substrate 11, and in the fourth embodiment, the first substrate 11 may also serve as the transparent lower substrate.

  Another manufacturing method of the transparent upper substrate 33 having the light reflecting portion 40 will be described below with reference to FIG. Specifically, first, a stamper (female die) 63 having a shape complementary to the light reflecting portion 40 is formed using a known technique such as electroforming, etching, or other cutting. Then, for example, an ultraviolet curable resin composition 64 is applied onto a light-transmitting glass substrate 33 ′ (see FIG. 17A), and this resin composition 64 is applied using a stamper 63. Shape. Specifically, the resin composition 64 is irradiated with ultraviolet rays in a state where the stamper 63 is pressed to obtain a cured resin composition 64A (see FIG. 17B), and then the stamper 63 is removed. Thus, an uneven portion having the shape of the light reflecting portion 40 can be formed on the surface of the cured resin composition 64A. Thereafter, a metal reflective layer (or multilayer thin film) 40C having a high light reflectivity such as Al or Ag is formed on the surface of the resin composition cured product 64A by, for example, a vacuum deposition method. Then, a part (convex portion) of the cured resin composition 64A on which the metal reflective layer 40C is laminated is cut and deleted by, for example, lapping (see FIG. 17D). Thereafter, the concave portion 41 is embedded with the filling material 62 or the adhesive layer 32, whereby the transparent upper substrate 33 having the light reflecting portion 40 can be obtained.

DESCRIPTION OF SYMBOLS 10 ... Light emitting element (Organic electroluminescence element, 11 ... 1st substrate, 11A ... 1st surface of 1st substrate, 11B ... 2nd surface of 1st substrate, 12 ... Gate electrode , 13 ... Gate insulating film, 14 ... Source / drain region, 15 ... Channel forming region, 16 ... Interlayer insulating layer, 16A ... Lower interlayer insulating layer, 16 ', 18' ... Opening, 16B ... upper interlayer insulating layer, 17 ... wiring, 17A, 18 ... contact plug, 21 ... first electrode, 21A ... first interface, 22 ... second electrode , 22A ... second interface, 23 ... organic layer, 23A ... light emitting layer, 24 ... insulating layer, 25 ... auxiliary wiring, 26 ... opening, 31 ... protective film 32, 36 ... adhesive layer, 33 ... transparent upper substrate, 33A ... transparent upper substrate 1 surface, 33B ... 2nd surface of transparent upper substrate, 33 '... glass substrate, 34 ... 2nd substrate, 35 ... transparent lower substrate, 35A ... 1st surface of transparent lower substrate , 35B: the second surface of the transparent lower substrate, 40, 60: a light reflecting portion, 40A, 60A: a lower end portion of the light reflecting portion, 40B, 60B: an upper end portion of the light reflecting portion, 40C ... Metal reflection layer (multilayer thin film), 41, 61 ... recess, 42, 62 ... filling material, 50, 70 ... lens part, 63 ... stamper (female), 64 ...・ Resin composition, 64A ... cured resin composition

Claims (7)

(A) The 1st electrode, the organic layer provided with the light emitting layer, and the 2nd electrode are laminated | stacked, the 1st interface comprised by the interface of a 1st electrode and an organic layer, the 2nd electrode, and an organic layer A plurality of light emitting elements that resonate light emitted from the light emitting layer and emit part of the light from the second electrode, and a second interface constituted by the interface with
(B) a transparent upper substrate having a first surface facing the second electrode and a second surface facing the first surface and fixed above the second electrode;
A display device comprising:
L ₁ and the distance from the maximum light emission position of the light-emitting layer and the first interface, OL ₁ optical distance, the distance from the maximum light emission position of the light-emitting layer and the second interface and L _2, the optical distance between OL _2, m ₁ and When m ₂ is an integer, the following formula (1-1), formula (1-2), formula (1-3) and formula (1-4) are satisfied,
A display device, wherein a lens portion through which light emitted from a light emitting layer through a second electrode passes is formed on a first surface of a transparent upper substrate.
_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (1-1)
0.7 {−Φ ₂ / (2π) + m ₂ } ≦ 2 × OL ₂ /λ≦1.2{−Φ ₂ / (2π) + m ₂ } (1-2)
L ₁ <L ₂ (1-3)
m ₁ <m ₂ (1-4)
here,
λ: Maximum peak wavelength of the spectrum of light generated in the light emitting layer Φ ₁ : Phase shift amount of reflected light generated at the first interface (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is. The arrangement of the plurality of light emitting elements is a stripe arrangement,
The display device according to claim 1, wherein a plurality of lens portions are provided for one light emitting element. The axis formed by the lens portion, which is the optical axis, is the z axis, and the angle formed with the z axis on the second electrode side of the light emitted from the second electrode at the point where the z axis intersects the second electrode is θ _O-2 , the transparent upper substrate _Where n _Sub-T is the refractive index of
sin (θ _O-2 )> 1 / n _Sub-T
The display device according to claim 1, wherein: The average light reflectance of the first electrode is 50% or more,
The display device according to claim 1, wherein an average light transmittance of the second electrode is 50% to 90%. The first electrode is made of a light reflecting material, the second electrode is made of a semi-light transmissive material,
The display device according to claim 1, wherein m ₁ = 0 and m ₂ = 1.   The display device according to claim 1, wherein a protective film and an adhesive layer are formed between the second electrode and the transparent upper substrate from the second electrode side. (A) a transparent lower substrate having a first surface and a second surface facing the first surface; and
(B) A first electrode, an organic layer provided with a light emitting layer, and a second electrode are provided on the first surface of the transparent lower substrate or above the first surface of the transparent lower substrate, and are stacked. Resonating the light emitted from the light emitting layer between the first interface constituted by the interface between the first electrode and the organic layer and the second interface constituted by the interface between the second electrode and the organic layer, A plurality of light emitting elements, each of which emits from the first electrode,
A display device comprising:
The distance from the maximum light emission position of the light emitting layer to the first interface is L ₁ , the optical distance is OL ₁ , the distance from the maximum light emission position of the light emitting layer to the second interface is L ₂ , the optical distance is OL ₂ , m ₁ and When m ₂ is an integer, the following formula (2-1), formula (2-2), formula (2-3) and formula (2-4) are satisfied,
A display device, wherein a lens portion through which light emitted from a light emitting layer through a first electrode passes is formed on a first surface of a transparent lower substrate.
_{0.7 {-Φ 1 / (2π)} + m 1} ≦ 2 × OL 1 /λ≦1.2{-Φ 1 / (2π) + m 1} (2-1)
_{0.7 {-Φ 2 / (2π)} + m 2} ≦ 2 × OL 2 /λ≦1.2{-Φ 2 / (2π) + m 2} (2-2)
L _1> L ₂ (2-3)
m ₁ > m ₂ (2-4)
here,
λ: Maximum peak wavelength of the spectrum of light generated in the light emitting layer Φ ₁ : Phase shift amount of reflected light generated at the first interface (unit: radians)
However, -2π <Φ ₁ ≦ 0
Φ ₂ : Phase shift amount of reflected light generated at the second interface (unit: radians)
However, -2π <Φ ₂ ≦ 0
It is.

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