CN113314560B - Triode display based on VDMOS device and carrying image sensing function - Google Patents
Triode display based on VDMOS device and carrying image sensing function Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
The application discloses a triode display based on a VDMOS device and carrying an image sensing function, which comprises a plurality of pixels, wherein each pixel comprises three sub-pixel units and three image sensing units, a driving backboard carries the plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units. The pixel of the application comprises 3 image sensing units and 3 light emitting units, which can realize the display functions of high resolution, high brightness, high contrast and low response time, and can also realize the function of receiving external color images in real time.
Description
Technical Field
The application relates to a triode display based on a VDMOS device and carrying an image sensing function, belonging to the field of display manufacturing.
Background
Along with the continuous development of display technology, the application range of the display panel is wider and wider, and the requirements of people on the display panel are also higher and higher. For example, the display panel is applied to products such as mobile phones, computers, tablet computers, electronic books, information inquiry machines, wearable devices and the like. As the application range of display panels expands, there is an increasing demand for display technology and display devices. Conventional LED/OLED displays have certain limitations that have not met the current further requirements of people for visual experience.
Disclosure of Invention
In order to solve the defects in the prior art, the application provides the triode display based on the VDMOS device and carrying the image sensing function, a vertical oxide transistor (VDMOS) device is prepared on the surface of a driving backboard through a semiconductor process, intrinsic amplification is provided for carriers through the conductance gain of the transistor, and the electric noise in a micro display device can be remarkably reduced, so that high-gain driving is realized for a high-resolution micro display, the display functions of high resolution, high brightness, high contrast and low response time can be realized, and the function of receiving external color images in real time can be realized. .
The technical scheme adopted in the application is as follows:
a VDMOS device-based triode display carrying an image sensing function, comprising:
each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units which are respectively a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit, and the image sensing area comprises three image sensing units which are respectively a red image sensing unit, a green image sensing unit and a blue image sensing unit;
the driving backboard is provided with a plurality of through holes which are regularly arranged, the sub-pixel units and the image sensing units cover at least one through hole, the driving backboard bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the sub-pixel unit comprises an anode, a VDMOS device, an ITO/TiN film layer and an LED light-emitting unit, wherein the anode is positioned on the driving backboard and covers at least one via hole, the VDMOS device is positioned on one side of the anode away from the driving backboard, the VDMOS device comprises an NPN semiconductor layer, a grid and a grid insulating layer, the NPN semiconductor layer is positioned on one side of the anode away from the driving backboard, the grid insulating layer is coated on the NPN semiconductor layer and the outer side wall of the anode, the grid is coated on the side wall of the grid insulating layer, the ITO/TiN film layer is positioned on one side of the VDMOS device away from the driving backboard, and the LED light-emitting unit is positioned on one side of the ITO/TiN film layer away from the driving backboard;
the image sensing unit comprises an anode and a VDMOS device, wherein the anode is positioned on the driving backboard and covers at least one via hole, and the VDMOS device is positioned on one side of the anode away from the driving backboard;
the first film packaging layer packages and wraps the VDMOS device, the ITO/TiN film layer, the LED light-emitting unit and the upper surface of the driving backboard, and electrode grooves are formed in the sub-pixel units and on the corresponding first film packaging layer in the image sensing unit, the bottoms of the electrode grooves in the sub-pixel units are exposed out of the upper surface of the LED light-emitting unit, and the bottoms of the electrode grooves in the image sensing unit are exposed out of the upper surface of the VDMOS device;
the common cathode is arranged on one layer of the first film packaging layer far away from the driving backboard and covers the electrode groove, the common cathode is in contact with the upper surface of the VDMOS device through the electrode groove in the image sensing unit, and the common cathode is in contact with the upper surface of the LED light emitting unit through the electrode groove in the sub-pixel unit;
the second film packaging layer is positioned on one side of the common cathode far away from the driving backboard and covers the common cathode.
Preferably, the LED light emitting unit includes a first bonding metal layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer and a second bonding metal layer, where the first bonding metal layer is grown on the side of the ITO/TiN thin film layer away from the driving back plate in a bonding manner, and the first semiconductor layer is located on the upper surface of the first bonding metal layer; the light-emitting layer is arranged on the upper surface of the first semiconductor layer; the second semiconductor layer is arranged on the upper surface of the light-emitting layer, and the second bonding metal layer is positioned on one side of the second semiconductor layer away from the driving backboard; the light-emitting layer in the red sub-pixel unit emits red light, the light-emitting layer in the green sub-pixel unit emits green light, and the light-emitting layer in the blue sub-pixel unit emits blue light.
Preferably, the LED light emitting unit is an OLED light emitting unit, the OLED light emitting unit includes an OLED white light layer, a drain electrode, a white light packaging layer, and a SiN protection sidewall, where the OLED white light layer is located on a side of the ITO/TiN thin film layer of the light emitting region away from the driving backplate and is in contact with the ITO/TiN thin film layer of the light emitting region, the drain electrode is located on a side of the OLED white light layer away from the driving backplate, the white light packaging layer is located on a side of the drain electrode away from the driving backplate, and the SiN protection sidewall is located on outer sidewalls of the OLED white light layer, the drain electrode, and the white light packaging layer.
Preferably, the liquid crystal display device further comprises an RGB filter layer, wherein the RGB filter layer is arranged on one side, far away from the driving backboard, of the second film packaging layer in the image sensing area, the RGB filter layer comprises a red filter unit R, a green filter unit G, a blue filter unit B and a black matrix, the red filter unit R, the green filter unit G and the blue filter unit B are sequentially arranged on the upper surface of the second film packaging layer at intervals, and the red filter unit R, the green filter unit G and the blue filter unit B are respectively overlapped with projection of an NPN type semiconductor layer in the image sensing unit on the driving backboard; the black matrix is disposed around the circumferences of the red, green, and blue filter units R, G, and B.
Preferably, the display device further comprises a first metal layer and a light filter layer, wherein the first metal layer is located on one side, far away from the driving backboard, of the second film packaging layer, and one light filter layer is arranged in each sub-pixel unit and each image sensing unit.
Preferably, the optical filter layer includes an insulating layer and a second metal layer, the insulating layer is located on a side of the first metal layer away from the driving back plate, the insulating layer overlaps with projection of the VDMOS device on the driving back plate, the second metal layer is located on a side of the insulating layer away from the driving back plate, and thicknesses of the insulating layers in each of the image sensing unit and the sub-pixel unit are set according to corresponding RGB colors.
Preferably, the glass packaging layer is adhered to one side, far away from the driving backboard, of the second film packaging layer through UV glue, and the UV glue is located in a frame area of the second film packaging layer.
Preferably, the driving back plate further comprises a glass packaging layer, wherein the glass packaging layer is adhered to one side, far away from the driving back plate, of the first metal layer through UV glue, and the UV glue is located in a frame area of the first metal layer.
The beneficial effects are that: the application provides a triode display based on a VDMOS device and provided with an image sensing function, wherein 3 image sensing units and 3 light emitting units are simultaneously arranged in one pixel, so that the display function of high resolution, high brightness, high contrast and low response time can be realized, and the function of receiving an external color image in real time can be realized.
Drawings
FIG. 1 is a schematic diagram of step S1 in example 1;
FIG. 2 is a schematic diagram of step S2 in example 1;
FIG. 3 is a schematic diagram of step S3 in example 1;
FIG. 4 is a schematic diagram of step S4 in example 1;
fig. 5 is a schematic diagram of step S5 in embodiment 1, namely, an overall structure schematic diagram of embodiment 1;
FIG. 6 is a schematic diagram of step S1 in example 2;
FIG. 7 is a schematic diagram of step S2 in example 2;
FIG. 8 is a schematic diagram of step S3 in example 2;
FIG. 9 is a schematic diagram of step S4 in example 2;
fig. 10 is a schematic diagram of step S5 in embodiment 2, namely, an overall structure schematic diagram of embodiment 2;
in the figure: the LED display panel comprises a red sub-pixel unit 1-1, a green sub-pixel unit 1-2, a blue sub-pixel unit 1-3, a red image sensing unit 1-4, a green image sensing unit 1-5, a blue image sensing unit 1-6, a driving back plate 2, a via hole 3, an anode 4, a VDMOS device 5, an NPN semiconductor layer 5-1, a grid 5-2, a grid insulating layer 5-3, an ITO/TiN film layer 6, an LED light emitting unit 7, a first bonding metal layer 7-1, a first semiconductor layer 7-2, a light emitting layer 7-3, a second semiconductor layer 7-4, a second bonding metal layer 7-5, an OLED white light layer 7-6, a drain electrode 7-7, a white light packaging layer 7-8, a SiN protective side wall 7-9, an RGB filter layer 8, a red filter unit R8-1, a green filter unit G8-2, a blue filter unit B8-3, a black matrix 8-4, a first film packaging layer 9, an electrode groove 9-1, a cathode 10, a co-packaging layer 11, a second glass packaging layer 12, a second metal layer 14, a UV (UV) insulating layer 15.
Detailed Description
In order to better understand the technical solutions of the present application for those skilled in the art, the following description of the technical solutions of the embodiments of the present application will be clearly and completely described, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
Example 1: as shown in fig. 5, a triode display based on a VDMOS device with an image sensing function includes:
each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units, namely a red sub-pixel unit 1-1, a green sub-pixel unit 1-2 and a blue sub-pixel unit 1-3, respectively, and the image sensing area comprises three image sensing units, namely a red image sensing unit 1-4, a green image sensing unit 1-5 and a blue image sensing unit 1-6, respectively;
the driving backboard 2 is provided with a plurality of through holes 3 which are regularly arranged, the sub-pixel units and the image sensing units cover at least one through hole 3, the driving backboard 2 carries a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the subpixel unit comprises an anode 4, a VDMOS device 5, an ITO/TiN film layer 6 and an LED light-emitting unit 7, wherein the anode 4 is positioned on the driving back plate 2 and covers at least one via hole, the VDMOS device 5 is positioned on one side of the anode 4 far away from the driving back plate 2, the ITO/TiN film layer 6 is positioned on one side of the VDMOS device 5 far away from the driving back plate 2, and the LED light-emitting unit 7 is positioned on one side of the ITO/TiN film layer 6 far away from the driving back plate 2; in this embodiment 1, the LED light emitting unit 7 includes a first bonding metal layer 7-1, a first semiconductor layer 7-2, a light emitting layer 7-3, a second semiconductor layer and 7-4 second bonding metal layers 7-5, wherein the first bonding metal layer 7-1 is grown on the side of the ITO/TiN thin film layer 6 away from the driving back plate 2 in a bonding manner, and the first semiconductor layer 7-2 is located on the upper surface of the first bonding metal layer 7-1; the light-emitting layer 7-3 is arranged on the upper surface of the first semiconductor layer 7-2; the second semiconductor layer 7-3 is disposed on the upper surface of the light emitting layer 7-3, and the second bonding metal layer 7-5 is located at one side of the second semiconductor layer 7-4 away from the driving back plate 2; the light-emitting layer 7-3 in the red sub-pixel unit emits red light, the light-emitting layer 7-3 in the green sub-pixel unit emits green light, and the light-emitting layer 7-3 in the blue sub-pixel unit emits blue light.
The image sensing unit comprises a VDMOS device 5 and an RGB optical filter layer, the structure of the VDMOS device is the same as that of the VDMOS device 5 in the light-emitting area, and the VDMOS device are both positioned on the driving backboard 2 and cover at least one via hole 3; the VDMOS device 5 in the image sensing unit and the light emitting region comprises an NPN type semiconductor layer 5-1, a grid electrode 5-2 and a grid electrode insulating layer 5-3, wherein the NPN type semiconductor layer 5-1 is positioned on one side of the anode 4 far away from the driving backboard 2, the grid electrode insulating layer 5-3 is coated on the outer side walls of the NPN type semiconductor layer 5-1 and the anode 4, and the grid electrode 5-2 is coated on the side wall of the grid electrode insulating layer 5-3;
the RGB optical filter layer is arranged on one side, far away from the driving backboard 2, of the second film packaging layer 11 in the image sensing area, the RGB optical filter 8 layer comprises a red optical filter unit R8-1, a green optical filter unit G8-2, a blue optical filter unit B8-3 and a black matrix 8-4, the red optical filter unit R8-1, the green optical filter unit G8-2 and the blue optical filter unit B8-3 are sequentially arranged on the upper surface of the second film packaging layer 11 at intervals, and the projection of the red optical filter unit R8-1, the green optical filter unit G8-2 and the blue optical filter unit B8-3 on the driving backboard 2 is overlapped with the projection of the NPN semiconductor layer 5-1 in the image sensing unit; the black matrix 8-4 is disposed around the periphery of the red filter unit R8-1, the green filter unit G8-2, and the blue filter unit B8-3.
The first film packaging layer 9 packages and wraps the VDMOS device 5, the ITO/TiN film layer 6, the LED light-emitting unit 7 and the upper surface of the driving backboard 2, and electrode grooves 9-1 are formed in the sub-pixel units and on the corresponding first film packaging layer 9 in the image sensing unit, part of the upper surface of the LED light-emitting unit (namely the second bonding metal layer 7-5) is exposed at the bottom of the electrode groove 9-1 in the sub-pixel unit, and part of the upper surface of the VDMOS device is exposed at the bottom of the electrode groove 9-1 of the image sensing unit;
the common cathode 10 is arranged on a layer of the first film packaging layer 9 far away from the driving backboard and covers the electrode groove 9-1, the common cathode 10 is in contact with the upper surface of the VDMOS device 5 through the electrode groove 9-1 in the image sensing unit, and the common cathode 10 is in contact with the upper surface of the LED light emitting unit 7 through the electrode groove 9-1 in the sub-pixel unit;
a second thin film encapsulation layer 11, the second thin film encapsulation layer 11 being located at a side of the common cathode 10 away from the driving back plate 2 and covering the common cathode 10;
the glass packaging layer 12 is adhered to one side, far away from the driving backboard 2, of the second film packaging layer 11 through UV (ultraviolet) glue 13, and the UV glue 13 is located in a frame area of the second film packaging layer 11.
The specific preparation steps of the triode display based on the VDMOS device with the image sensing function in the embodiment 1 are as follows:
s1: forming a plurality of regularly arranged through holes 3 on a driving backboard 2, filling conductive materials in the through holes 3, forming a plurality of anodes 4 on the upper surface of the driving backboard 2, covering at least one through hole 3 by each anode 4, growing and patterning an NPN type semiconductor layer 5-1 on the anodes 4, simultaneously carrying out patterning treatment on the NPN type semiconductor layer 5-1 so that the NPN type semiconductor layer 5-1 is positioned on one side of the anodes 4 far away from the driving backboard 2, sequentially plating a gate insulating layer 5-3 and a gate 5-2 on the outer surfaces of the NPN type semiconductor layer 5-1 and the anodes 4, and sequentially processing the gate 5-2 and the gate insulating layer 5-3 by adopting a Spacer technology to obtain a VDMOS device 5, wherein the gate insulating layer 5-3 is plated on the outer side walls of the NPN type semiconductor layer 5-1 and the anodes 4, and the gate 5-2 is covered on the side edges of the gate insulating layer 5-3;
s2: plating an ITO/TiN film layer 6 on the upper surface of the NPN semiconductor layer 5-1 of the light emitting region, and then depositing a growing part of a first film packaging layer 9 on the driving backboard 2, so that the first film packaging layer 9 is flush with the ITO/TiN film layer 6;
s3: RGB LED chips are bonded and grown on the ITO/TiN film layer 6 in the sub-pixel unit by adopting a huge transfer and vacuum low-temperature bonding technology to form an LED luminous unit 6;
s4, continuing to deposit and grow a first film packaging layer 9, enabling the first film packaging layer to cover the LED luminous unit 7, carrying out imaging treatment on the first film packaging layer to form a plurality of electrode grooves 9-1, then preparing a common cathode 10 on the upper surface of the first film packaging layer 9, enabling the common cathode 10 to cover the electrode grooves 9-1, and then filling and growing a second film packaging layer 11 on one side of the common cathode 10 far away from the driving backboard 2, wherein in the image sensing unit, the common cathode 10 is contacted with the upper surface of the NPN type semiconductor layer 5-1 through the electrode grooves 9-1, and in the sub-pixel unit, the common cathode 10 is contacted with the upper surface of the second semiconductor layer 7-4 through the electrode grooves 9-1;
s5: and then, preparing an RGB filter layer on the second film packaging layer 11 of the image sensing area by adopting a yellow light process, and finally, bonding the glass packaging layer 12 above the second film packaging layer 11 by adopting UV glue 13.
In the LED light emitting unit 7, the material of the first bonding metal layer is P-pad, the material of the first semiconductor layer and the material of the second semiconductor layer are N-GaN, the material of the light emitting layer is MQW (multiple quantum well light emitting material), and the material of the second bonding metal layer is N-pad.
The ITO/TiN thin film layer in the application is an ITO thin film layer and a TiN thin film layer which are arranged up and down, and the TiN thin film layer is contacted with the NPN semiconductor layer. The ITO/TiN film layer is used for improving the work function ratio.
In the application, the gate insulating layer adopts SiO 2 SiN or Al 2 O 3 The preparation method comprises the steps of (1) preparing; the gate 5-2 is made of p-Si semiconductor. The application is thatThe plating grid insulating layer 5-3 can be prepared by adopting a chemical vapor deposition method or an atomic layer deposition method, and the grid electrode-2 can be prepared by adopting a molecular beam epitaxy technology.
In embodiment 1, the materials of the first thin film encapsulation layer 9 and the second thin film encapsulation layer 11 may be organic thin films, inorganic thin films, or organic thin films on which inorganic thin films are stacked.
Example 2: as shown in fig. 10, a triode display based on a VDMOS device with an image sensing function includes:
each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units, namely a red sub-pixel unit 1-1, a green sub-pixel unit 1-2 and a blue sub-pixel unit 1-3, respectively, and the image sensing area comprises three image sensing units, namely a red image sensing unit 1-4, a green image sensing unit 1-5 and a blue image sensing unit 1-6, respectively;
the driving backboard 2 is provided with a plurality of through holes 3 which are regularly arranged, the sub-pixel units and the image sensing units cover at least one through hole 3, the driving backboard 2 carries a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the subpixel unit comprises an anode 4, a VDMOS device 5, an ITO/TiN film layer 6 and an LED light-emitting unit 7, wherein the anode 4 is positioned on the driving backboard 2 and covers at least one via hole 3, the VDMOS device 5 is positioned on one side of the anode 4 away from the driving backboard 2, the ITO/TiN film layer 6 is positioned on one side of the VDMOS device 5 away from the driving backboard 2, and the LED light-emitting unit 7 is positioned on one side of the ITO/TiN film layer 6 away from the driving backboard 2; the LED light-emitting unit 7 is an OLED light-emitting unit, the OLED light-emitting unit comprises an OLED white light layer 7-6, a drain electrode 7-7, a white light packaging layer 7-8 and a SiN protection side wall 7-9, the OLED white light layer 7-6 is located on one side of the ITO/TiN thin film layer 6 of the light-emitting area far away from the driving backboard 2 and is in contact with the ITO/TiN thin film layer 6 of the light-emitting area, the drain electrode 7-7 is located on one side of the OLED white light layer 7-6 far away from the driving backboard 2, the white light packaging layer 7-8 is located on one side of the drain electrode 7-7 far away from the driving backboard 2, and the SiN protection side wall 7-9 is located on the outer side walls of the OLED white light layer 7-6, the drain electrode 7-7 and the white light packaging layer 7-8.
The image sensing unit comprises a VDMOS device 5, wherein the VDMOS device 5 is positioned on the driving backboard and covers at least one via hole 3; the image sensing unit and the VDMOS device in the light emitting area have the same structure, the VDMOS device comprises an NPN semiconductor layer 5-1, a grid electrode 5-2 and a grid electrode insulation layer 5-3, the NPN semiconductor layer 5-1 is positioned on one side of the anode 4 far away from the driving backboard 2, the grid electrode insulation layer 5-3 is coated on the outer side walls of the NPN semiconductor layer 5-1 and the anode 4, and the grid electrode 5-2 is coated on the side wall of the grid electrode insulation layer 5-3.
The first film packaging layer 9 is used for packaging and coating the VDMOS device 5, the ITO/TiN film layer 6, the LED light-emitting unit 7 and the upper surface of the driving backboard 2, an electrode groove 9-1 is formed in each of the sub-pixel units and the corresponding first film packaging layer 9 in the image sensing unit, the bottom of the electrode groove 9-1 in the light-emitting area is exposed out of the upper surface of the drain electrode 7-7 in the OLED light-emitting unit, and the bottom of the electrode groove 9-1 of the image sensing unit is exposed out of the upper surface of the VDMOS device 5;
and the common cathode 10 is arranged on a layer of the first film packaging layer 9 far away from the driving backboard 2 and covers the electrode groove 9-1, the common cathode 10 is contacted with the upper surface of the VDMOS device through the electrode groove 9-1 in the image sensing unit, and the common cathode 10 is contacted with the upper surface of the drain electrode 7-7 in the OLED light emitting unit through the electrode groove 9-1 in the sub-pixel unit.
And the second film packaging layer 11 is positioned on one side of the common cathode away from the driving backboard and covers the common cathode.
The first metal layer 14, the first metal layer 14 is located at a side of the second thin film encapsulation layer 11 away from the driving back plate.
The optical filter layer is arranged in each sub-pixel unit and each image sensing unit, the optical filter layer comprises an insulating layer 15 and a second metal layer 16, the insulating layer 15 and the second metal layer 16 are arranged on one side, far away from the driving backboard 2, of the first metal layer 14, the insulating layer 15 is overlapped with projection of the VDMOS device 5 on the driving backboard 2, the second metal layer 16 is arranged on one side, far away from the driving backboard 2, of the insulating layer 15, and the thickness of the insulating layer 15 in each image sensing unit and each sub-pixel unit is set according to corresponding RGB colors. In embodiment 2, the thickness of the insulating layer 15 of the red image sensing unit and the red sub-pixel unit is 28nm; the thickness of the insulating layer 15 of the green image sensing unit and the green sub-pixel unit is 15nm; the thickness of the insulating layer 15 of the blue image sensing unit and the blue subpixel unit is 9nm.
The glass packaging layer 12 is adhered to one side, away from the driving backboard 2, of the first metal layer 14 through the UV adhesive 13, and the UV adhesive is located in a frame area of the first metal layer 14.
In embodiment 2, the specific preparation steps of the triode display based on the VDMOS device with the image sensing function are as follows:
s1: as shown in fig. 6, a plurality of regularly arranged through holes 3 are formed on a driving backboard 2, conductive materials are filled in the through holes 3, then a plurality of anodes 4 are formed on the upper surface of the driving backboard 2, each anode 4 covers at least one through hole 3, then an NPN type semiconductor layer 5-1 is grown and patterned on the anodes 4, simultaneously patterning is carried out on the NPN type semiconductor layer 5-1, so that the NPN type semiconductor layer 5-1 is positioned on one side of the anodes 4 far away from the driving backboard 2, then a gate insulating layer 5-3 and a gate 5-2 are plated on the outer surfaces of the NPN type semiconductor layer 5-1 and the anodes 4 in sequence, and a Spacer etch process is adopted to process the gate 5-2 and the gate insulating layer 5-3 in sequence to obtain a VDMOS device, so that the gate insulating layer 5-3 is plated on the outer side walls of the NPN type semiconductor layer 5-1 and the anodes 4, and the gate 5-2 is covered on the side edges of the gate insulating layer 5-3;
s2: as shown in fig. 7, an ITO/TiN thin film layer 6 is plated on the upper surface of an NPN semiconductor layer 5-1 in a sub-pixel unit, and then a grown portion of a first thin film encapsulation layer 9 is deposited on a driving back plate such that the first thin film encapsulation layer 9 is flush with the ITO/TiN thin film layer 6;
s3: as shown in fig. 8, the OLED white light layer 7-6, the drain electrode 7-7 and the white light encapsulation layer 7-8 are sequentially evaporated on the side of the first thin film encapsulation layer 9 away from the driving back plate 2, and patterned, so that the OLED white light layer 7-6 covers only the first thin film encapsulation layer 9 of the light emitting region and contacts the ITO/TiN thin film layer 6 of the light emitting region, and then SiN protection sidewalls 7-9 are prepared on the sides of the OLED white light layer 7-6, the drain electrode 7-7 and the white light encapsulation layer 7-8;
s4, as shown in FIG. 9, continuing to deposit and grow a first film packaging layer 9 to cover the OLED white light unit, carrying out patterning treatment on the OLED white light unit, forming an electrode groove 9-1 on each image sensing unit and a light emitting area, then preparing a common cathode 10 on the upper surface of the first film packaging layer 9, enabling the common cathode 10 to cover the electrode groove 9-1 and one side of the first film packaging layer 9 away from the driving backboard 2, and then filling and growing a second film packaging layer 11 on one side of the common cathode 10 away from the driving backboard 2, wherein in the image sensing unit, the common cathode 10 is contacted with the upper surface of the NPN type semiconductor layer 5-1 through the electrode groove 9-1, and the common cathode 10 is contacted with a drain electrode 7-7 through the electrode groove 9-1 in the light emitting area;
s5: as shown in fig. 10, a first metal layer 14 is prepared on a second thin film encapsulation layer 11, then an insulating layer 15 with different thickness is prepared on the first metal layer 14 corresponding to each sub-pixel unit and the image sensing unit, a second metal layer 16 is prepared on the insulating layer 15, and finally a glass encapsulation layer 12 is adhered above the second metal layer 16 by using a UV glue 13.
In embodiment 2, the metal material used for the first metal layer 14 and the second metal layer 16 is Ag or Al, and the thickness of the first metal layer 14 and the second metal layer 16 is 20nm. The material of the insulating layer 15 may be amorphous silicon.
The ITO/TiN thin film layer in the application is an ITO thin film layer and a TiN thin film layer which are arranged up and down, and the TiN thin film layer is contacted with the NPN semiconductor layer 5-1. The ITO/TiN film layer is used for improving the work function ratio.
In embodiment 2, the materials of the first thin film encapsulation layer 9 and the second thin film encapsulation layer 11 may be organic thin films, inorganic thin films, or stacked inorganic thin films on organic thin films.
The foregoing is merely a preferred embodiment of the present application and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present application, which are intended to be comprehended within the scope of the present application.
Claims (8)
1. A VDMOS device-based triode display carrying an image sensing function, comprising:
each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units which are respectively a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit, and the image sensing area comprises three image sensing units which are respectively a red image sensing unit, a green image sensing unit and a blue image sensing unit;
the driving backboard is provided with a plurality of through holes which are regularly arranged, the sub-pixel units and the image sensing units cover at least one through hole, the driving backboard bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the sub-pixel unit comprises an anode, a VDMOS device, an ITO/TiN film layer and an LED light-emitting unit, wherein the anode is positioned on the driving backboard and covers at least one via hole, the VDMOS device is positioned on one side of the anode away from the driving backboard, the VDMOS device comprises an NPN semiconductor layer, a grid and a grid insulating layer, the NPN semiconductor layer is positioned on one side of the anode away from the driving backboard, the grid insulating layer is coated on the NPN semiconductor layer and the outer side wall of the anode, the grid is coated on the side wall of the grid insulating layer, the ITO/TiN film layer is positioned on one side of the VDMOS device away from the driving backboard, and the LED light-emitting unit is positioned on one side of the ITO/TiN film layer away from the driving backboard;
the image sensing unit comprises an anode and a VDMOS device, wherein the anode is positioned on the driving backboard and covers at least one via hole, and the VDMOS device is positioned on one side of the anode away from the driving backboard;
the first film packaging layer packages and wraps the VDMOS device, the ITO/TiN film layer, the LED light-emitting unit and the upper surface of the driving backboard, and electrode grooves are formed in the sub-pixel units and on the corresponding first film packaging layer in the image sensing unit, the bottoms of the electrode grooves in the sub-pixel units are exposed out of the upper surface of the LED light-emitting unit, and the bottoms of the electrode grooves in the image sensing unit are exposed out of the upper surface of the VDMOS device;
the common cathode is arranged on one layer of the first film packaging layer far away from the driving backboard and covers the electrode groove, the common cathode is in contact with the upper surface of the VDMOS device through the electrode groove in the image sensing unit, and the common cathode is in contact with the upper surface of the LED light emitting unit through the electrode groove in the sub-pixel unit;
the second film packaging layer is positioned on one side of the common cathode far away from the driving backboard and covers the common cathode.
2. The triode display based on a VDMOS device with image sensing function according to claim 1, wherein the LED light emitting unit comprises a first bonding metal layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer and a second bonding metal layer, wherein the first bonding metal layer is grown on one side of the ITO/TiN film layer far away from the driving backboard in a bonding way, and the first semiconductor layer is positioned on the upper surface of the first bonding metal layer; the light-emitting layer is arranged on the upper surface of the first semiconductor layer; the second semiconductor layer is arranged on the upper surface of the light-emitting layer, and the second bonding metal layer is positioned on one side of the second semiconductor layer away from the driving backboard; the light-emitting layer in the red sub-pixel unit emits red light, the light-emitting layer in the green sub-pixel unit emits green light, and the light-emitting layer in the blue sub-pixel unit emits blue light.
3. The triode display based on a VDMOS device with image sensing function according to claim 1, wherein the LED light emitting unit is an OLED light emitting unit, the OLED light emitting unit includes an OLED white light layer, a drain electrode, a white light encapsulation layer and a SiN protection sidewall, the OLED white light layer is located at a side of the light emitting area where the ITO/TiN thin layer is far away from the driving back plate and is in contact with the ITO/TiN thin layer of the light emitting area, the drain electrode is located at a side of the OLED white light layer where the OLED white light layer is far away from the driving back plate, the white light encapsulation layer is located at a side of the drain electrode where the drain electrode is far away from the driving back plate, and the SiN protection sidewall is located at an outer sidewall of the OLED white light layer, the drain electrode and the white light encapsulation layer.
4. The triode display based on a VDMOS device with image sensing function according to claim 2, further comprising an RGB filter layer, wherein the RGB filter layer is arranged on one side of the second film packaging layer far away from the driving backboard in the image sensing area, the RGB filter layer comprises a red filter unit R, a green filter unit G, a blue filter unit B and a black matrix, the red filter unit R, the green filter unit G and the blue filter unit B are sequentially arranged on the upper surface of the second film packaging layer at intervals, and the red filter unit R, the green filter unit G and the blue filter unit B are respectively overlapped with projection of an NPN type semiconductor layer in the image sensing unit on the driving backboard; the black matrix is disposed around the circumferences of the red, green, and blue filter units R, G, and B.
5. The VDMOS device-based triode display with image sensing function according to claim 3, further comprising a first metal layer and a filter layer, wherein the first metal layer is located at a side of the second thin film encapsulation layer far away from the driving back plate, and one filter layer is disposed in each sub-pixel unit and each image sensing unit.
6. The VDMOS device-based triode display with image sensing function according to claim 5, wherein the optical filter layer comprises an insulating layer and a second metal layer, the insulating layer is located on one side of the first metal layer away from the driving back plate, the insulating layer overlaps with projection of the VDMOS device on the driving back plate, the second metal layer is located on one side of the insulating layer away from the driving back plate, and thickness of the insulating layer in each image sensing unit and each sub-pixel unit is set according to corresponding RGB colors.
7. The VDMOS device-based triode display with image sensing function according to claim 4, further comprising a glass encapsulation layer, wherein the glass encapsulation layer is adhered to a side of the second thin film encapsulation layer far away from the driving back plate through UV glue, and the UV glue is located in a frame area of the second thin film encapsulation layer.
8. The VDMOS device-based triode display with image sensing function according to claim 6, further comprising a glass encapsulation layer, wherein the glass encapsulation layer is adhered to a side of the first metal layer far away from the driving back plate by UV glue, and the UV glue is located in a frame area of the first metal layer.
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