CN113314559A - LED micro-display with image sensing function - Google Patents
LED micro-display with image sensing function Download PDFInfo
- Publication number
- CN113314559A CN113314559A CN202110578773.8A CN202110578773A CN113314559A CN 113314559 A CN113314559 A CN 113314559A CN 202110578773 A CN202110578773 A CN 202110578773A CN 113314559 A CN113314559 A CN 113314559A
- Authority
- CN
- China
- Prior art keywords
- layer
- image sensing
- driving
- sub
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims description 89
- 229910052751 metal Inorganic materials 0.000 claims description 89
- 239000010409 thin film Substances 0.000 claims description 75
- 238000004806 packaging method and process Methods 0.000 claims description 62
- 238000002955 isolation Methods 0.000 claims description 61
- 238000005538 encapsulation Methods 0.000 claims description 36
- 239000010408 film Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 239000003292 glue Substances 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 239000002096 quantum dot Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000002265 prevention Effects 0.000 description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an LED micro-display with an image sensing function, which comprises a plurality of pixels, wherein each pixel comprises three sub-pixel units and three image sensing units, a driving back plate bears the plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units. According to the invention, the LED display units on the backboard are driven by the semiconductor process through the semiconductor process preparation, and 3 image sensing units are carried, so that the display functions of high resolution, high brightness, high contrast and low response time can be realized, the external color image can be received in real time, and the image sensing function is provided for the external image.
Description
Technical Field
The invention relates to an LED micro-display based on a mounted image sensing function, and belongs to the field of display manufacturing.
Background
With the continuous development of display technology, the application range of display panels is wider and wider, and the requirements of people on the display panels are higher and higher. For example, the display panel is applied to products such as mobile phones, computers, tablet computers, electronic books, information query machines, wearable devices and the like. As the application range of display panels is expanded, higher and higher requirements are put on display technologies and display devices. The traditional LED/OLED display has certain limitations and cannot meet more requirements of people on visual experience at present.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides the LED micro-display with the image sensing function, which not only can realize the display functions of high resolution, high brightness, high contrast and low response time, but also can receive an external color image in real time and has the image sensing function on the external color image.
The invention mainly adopts the technical scheme that:
an LED micro-display with image sensing function, comprising:
the pixel structure comprises a plurality of pixels, a light source and a light source, wherein each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units which are respectively a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit, and the image sensing area comprises three image sensing units which are respectively a red image sensing unit, a green image sensing unit and a blue image sensing unit;
the driving back plate is provided with a plurality of regularly arranged through holes, and the sub-pixel unit and the image sensing unit cover at least one through hole; the driving back plate bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the image sensing unit comprises a sensing electrode, a first isolation layer and an image sensing layer, wherein the sensing electrode is arranged on the upper surface of the driving backboard and is in contact with the via hole, the first isolation layer grows on the upper surface of the driving backboard and covers the sensing electrode, a first notch is formed in the first isolation layer on the sensing electrode, part of the sensing electrode is exposed, and the image sensing layer is arranged on one side, away from the driving backboard, of the first isolation layer and is in contact with the sensing electrode through the first notch.
The three sub-pixel units of the light emitting area respectively comprise an anode and an LED light emitting unit, the anode is arranged on the upper surface of the driving backboard and is in contact with the via hole, and the LED light emitting unit is arranged on one side, far away from the driving backboard, of the anode.
Preferably, the liquid crystal display device further comprises a first thin film packaging layer, the first thin film packaging layer is arranged on one side, far away from the driving back plate, of the first isolation layer and covers the image sensing layer in the image sensing unit and the LED light-emitting units in the sub-pixel units, electrode grooves are formed in the first thin film packaging layer corresponding to the image sensing layer in the image sensing unit to expose partial image sensing layer, and electrode grooves are formed in the first thin film packaging layer corresponding to the LED light-emitting units in the light-emitting area to expose partial top layers of the LED light-emitting units.
Preferably, the liquid crystal display further comprises a common cathode, the common cathode is arranged on one side of the first film packaging layer far away from the driving back plate, in the image sensing unit, the common cathode is in contact with the image sensing layer through an electrode groove, and in the sub-pixel unit, the common cathode is in contact with the top layer of the LED light-emitting unit through the electrode groove.
Preferably, the driving back plate further comprises a second thin film encapsulation layer, and the second thin film encapsulation layer is grown on one side of the common cathode, which is far away from the driving back plate.
Preferably, the LED light-emitting unit includes a bonding metal layer, a first semiconductor layer, a light-emitting layer and a second semiconductor layer, the bonding metal layer is grown on a side of the anode away from the driving backplane; the first semiconductor layer is located on one side, away from the driving backboard, of the bonding metal layer and is bonded with the bonding metal layer; the light emitting layer is arranged on one side, away from the driving backboard, of the first semiconductor layer; the second semiconductor layer is arranged on one side of the light-emitting layer far away from the driving backboard; the first isolation layer is positioned on one side, far away from the driving back plate, of the second semiconductor layer, the first isolation layer covers the driving back plate, the anode and the LED light-emitting units of the light-emitting area, notches corresponding to the electrode grooves in the light-emitting area are formed in the first isolation layer, part of the second semiconductor layer is exposed, and the light-emitting layers in the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit emit blue light.
Preferably, the LED light emitting unit includes a first bonding metal layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a second bonding metal layer, the first bonding metal layer being grown on an upper surface of the anode; the first semiconductor layer is positioned on one side, far away from the driving backboard, of the first bonding metal layer; the light emitting layer is arranged on one side, away from the driving backboard, of the first semiconductor layer; the second semiconductor layer is arranged on one side, away from the driving backboard, of the light emitting layer, the second bonding metal layer is arranged on one side, away from the driving backboard, of the second semiconductor layer, the light emitting layer in the red sub-pixel unit is made of a red multi-quantum well structure material, and the light emitting layer in the green sub-pixel unit is made of a green multi-quantum well structure material; and the light emitting layer in the blue sub-pixel unit is made of a blue multi-quantum well structure material.
Preferably, the LED light emitting unit is an OLED light emitting region, the OLED light emitting region includes a white OLED, a cathode and a SiN sidewall, the white OLED covers the anode in the light emitting region and the upper surface of the driving back plate, the cathode is located on one side of the white OLED far away from the driving back plate, and the SiN sidewall is located on the side of the white OLED, the cathode and the anode.
Preferably, each image sensing unit further includes a grating layer, the grating layer is disposed on a side of the second thin film encapsulation layer away from the driving backplane, and a projection of the grating layer and a projection of the image sensing layer on the driving backplane are overlapped; the red sub-pixel unit and the green sub-pixel unit further comprise color conversion layers, the color conversion layers of the red sub-pixel unit comprise red quantum dots, the color conversion layers of the green sub-pixel unit comprise green quantum dots, first grooves are arranged on second film packaging layers in the red sub-pixel unit and the green sub-pixel unit, the color conversion layers are located in the first grooves, the first grooves are overlapped with projections of the light emitting layers on the driving back plate, second grooves are further arranged on the second film packaging layers, vertical projections of the second grooves on the driving back plate are located between vertical projections of the adjacent sub-pixel units on the driving back plate, a second isolation layer is arranged on one side, far away from the driving back plate, of the second film packaging layers, and the color conversion layers and the second grooves are covered by the second isolation layers, the anti-crosstalk layer is located in the second groove and covers the bottom of the second groove and the second isolation layer on the side wall of the second groove, one side, far away from the driving back plate, of the second film packaging layer is connected with the glass packaging layer through UV glue, and the UV glue is located in a frame area of the second film packaging layer.
Preferably, the image sensing area further includes a first metal layer, an insulating layer, a second metal layer and a glass packaging layer, the first metal layer is disposed on one side of the second thin film packaging layer, which is far away from the driving backboard, the insulating layer is disposed on one side of the first metal layer, which is far away from the driving backboard, the second metal layer is disposed on one side of the insulating layer, which is far away from the driving backboard, the insulating layer and the sensing electrode in each image sensing unit are overlapped in projection on the driving backboard, the thickness of the insulating layer in each image sensing unit is set according to the corresponding RGB colors, one side of the second thin film packaging layer, which is far away from the driving backboard, is bonded to the glass packaging layer through UV glue, and the UV glue is disposed in a frame region of the second thin film packaging layer.
Preferably, the display panel further comprises a first metal layer, an insulating layer, a second metal layer and a glass packaging layer, the first metal layer is arranged on one side, far away from the driving backboard, of the second thin film packaging layer, the insulating layer is arranged on one side, far away from the driving backboard, of the first metal layer, the second metal layer is arranged on one side, far away from the driving backboard, of the insulating layer, the insulating layer and the sensing electrode in each image sensing unit are in projection overlapping on the driving backboard, the insulating layer and the anode in each sub-pixel unit are in projection overlapping on the driving backboard, the thickness of the insulating layer in each image sensing unit and each sub-pixel unit is set according to the corresponding RGB color, the glass packaging layer is bonded to one side, far away from the driving backboard, of the first metal layer through UV glue, and the UV glue is arranged in a frame area of the first metal layer.
Has the advantages that: the invention provides an LED micro-display with an image sensing function and a preparation method thereof, wherein a semiconductor process is used for preparing an LED display unit on a driving back plate through the semiconductor process, and 3 image sensing units are simultaneously carried, so that the display function of high resolution, high brightness, high contrast and low response time can be realized, an external color image can be received in real time, and the LED micro-display has the image sensing function on the external color image.
Drawings
FIG. 1 is a schematic view of step S1 in example 1;
FIG. 2 is a schematic view of step S2 in example 1;
FIG. 3 is a schematic view of step S3 in example 1;
FIG. 4 is a schematic view of step S4 in example 1;
FIG. 5 is a schematic view of step S5 in example 1;
FIG. 6 is a schematic view of step S6 in example 1;
FIG. 7 is a schematic view of step S7 in example 1;
FIG. 8 is a schematic view of step S8 in example 1;
fig. 9 is a schematic view of step S9 in embodiment 1, that is, a schematic view of the entire structure of embodiment 1;
fig. 10 is a circuit diagram in one structural unit of embodiment 1.
FIG. 11 is a schematic view of step S1 in example 2;
FIG. 12 is a view showing step S2 in example 2;
FIG. 13 is a view showing step S3 in example 2;
fig. 14 is a schematic view of step S4 in embodiment 2, that is, a schematic view of the entire structure of embodiment 2;
FIG. 15 is a schematic view of step S1 in example 3;
FIG. 16 is a view showing step S2 in example 3;
FIG. 17 is a schematic view of step S3 in example 3;
fig. 18 is a schematic view of step S4 in embodiment 3, that is, a schematic view of the entire structure of embodiment 3;
in the figure: the pixel structure comprises a red sub-pixel unit 1-1, a green sub-pixel unit 1-2, a blue sub-pixel unit 1-3, a red image sensing unit 1-4, a green image sensing unit 1-5, a blue image sensing unit 1-6, a driving back plate 2, a via hole 3, an anode 4, an LED light emitting unit 5, a bonding metal layer 5-1, a first semiconductor layer 5-2, a light emitting layer 5-3, a second semiconductor layer 5-4, a substrate 5-5, a first bonding metal layer 5-6, a second bonding metal layer 5-7, a white OLED5-8, a cathode 5-9, an SiN side wall 5-10, a color conversion layer 6, a sensing electrode 7, an image sensing layer 8, a grating layer 9, a first Al thin film layer 9-1, a ZnSe thin film layer 9-2, a second Al thin film layer 9-3, a first electrode layer and a second electrode layer 9-3, The device comprises a first isolation layer 10, a first notch 10-1, a first thin film packaging layer 11, an electrode groove 11-1, a common cathode 12, a second thin film packaging layer 13, a first groove 13-1, a second groove 13-2, a second isolation layer 14, a crosstalk prevention layer 15, a glass packaging layer 16, UV glue 17, a first metal layer 18, an insulation layer 19 and a second metal layer 20.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Example 1: as shown in fig. 9, an LED microdisplay with an image sensing function mounted thereon includes:
the pixel comprises a plurality of pixels, wherein each pixel comprises three sub-pixel units and three image sensing units, namely a red sub-pixel unit 1-1, a green sub-pixel unit 1-2, a blue sub-pixel unit 1-3, a red image sensing unit 1-4, a green image sensing unit 1-5 and a blue image sensing unit 1-6;
the driving back plate 2 is provided with a plurality of regularly arranged through holes 3, and the sub-pixel unit and the image sensing unit cover at least one through hole 3; the driving back plate 2 bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the image sensing unit comprises a sensing electrode 7, an image sensing layer 8, a grating layer 9 and a first isolation layer 10, wherein the sensing electrode 7 is arranged on the upper surface of the driving backboard 2 and is in contact with the via hole 3, the first isolation layer 10 grows on the upper surface of the driving backboard 2 and covers the sensing electrode 7, first notches 10-1 are formed in the first isolation layers 10 on the sensing electrode 7 to expose part of the sensing electrode 7, the image sensing layer 8 is arranged on one side, far away from the driving backboard 2, of the first isolation layers 10 and is in contact with the sensing electrode 7 through the first notches 10-1, the grating layer 9 is arranged on one side, far away from the driving backboard 2, of the second thin film packaging layer 13, and the projections of the grating layer 10 and the image sensing layer 8 on the driving backboard are overlapped;
the three sub-pixel units of the light emitting area respectively comprise an anode 4 and an LED light emitting unit 5, the anode 4 is arranged on the upper surface of the driving backboard 2 and covers at least one through hole 3, and the LED light emitting unit 5 is arranged on one side, far away from the driving backboard 2, of the anode 4. In this embodiment 1, the LED light emitting unit 5 includes a bonding metal layer 5-1, a first semiconductor layer 5-2, a light emitting layer 5-3 and a second semiconductor layer 5-4, where the bonding metal layer 5-1 is grown on a side of the anode 4 away from the driving backplane 2; the first semiconductor layer 5-2 is located on one side, away from the driving backboard, of the bonding metal layer 5-1 and is bonded with the bonding metal layer 5-1; the light emitting layer 5-3 is arranged on one side of the first semiconductor layer 5-2 far away from the driving backboard 2; the second semiconductor layer 5-4 is arranged on one side of the light emitting layer 5-3 far away from the driving backboard 2; the first isolation layer 10 is located on one side, far away from the driving back plate 2, of the second semiconductor layer 5-2, the driving back plate 2, the anode 4 and the LED light-emitting unit 5 of the light-emitting region are respectively covered with the first isolation layer 10, a first notch 10-1 corresponding to an electrode groove in the light-emitting region is formed in the first isolation layer 10, a part of the second semiconductor layer 5-4 is exposed, and the light-emitting layers 5-3 in the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit emit blue light.
The red sub-pixel unit 1-1 and the green sub-pixel unit 1-2 further comprise a color conversion layer 6, the color conversion layer 6 of the red sub-pixel unit 1-1 comprises red quantum dots, the color conversion layer 6 of the green sub-pixel unit 1-2 comprises green quantum dots, a first groove 13-1 is arranged on a second film packaging layer 13 in the red sub-pixel unit 1-1 and the green sub-pixel unit 1-2, the color conversion layer 6 is positioned in the first groove 13-1, the first groove 13-1 is overlapped with a projection of the light emitting layer 5-2 on the driving back plate 2, a second groove 13-2 is further arranged on the second film packaging layer 13, a vertical projection of the second groove 13-2 on the driving back plate 2 is positioned between vertical projections of adjacent sub-pixel units on the driving back plate 2, a second isolation layer 14 is arranged on one side, away from the driving back plate 2, of the second film encapsulation layer 13, the second isolation layer 14 covers the color conversion layer 6 and the second groove 13-2, the crosstalk prevention layer 15 is located in the second groove 13-2 and covers the bottom of the second groove 13-2 and the second isolation layer 14 on the side wall, one side, away from the driving back plate 2, of the second film encapsulation layer 13 is bonded with a glass encapsulation layer 16 through UV glue 17, and the UV glue 17 is located in a frame area of the second film encapsulation layer 13.
In embodiment 1, the specific preparation steps of the LED microdisplay with the image sensing function are as follows:
s1, as shown in figure 1, forming a plurality of via holes 3 regularly arranged on the driving backboard 2, filling the via holes 3 with conductive materials, and then forming a plurality of anodes 4 and sensing electrodes 7 on the upper surface of the driving backboard 2 and contacting with the upper surfaces of the via holes 3;
s2, as shown in FIG. 2, directly bonding the anode 4 and the upper surface of the sensing electrode 7 with a bonding metal layer 5-1 on an LED light-emitting substrate, and completing the peeling of the substrate 5-5, wherein the LED light-emitting substrate comprises a substrate 5-5, a bonding metal layer 5-1, a first semiconductor layer 5-2, a light-emitting layer 5-3 and a second semiconductor layer 5-4, and the second semiconductor layer 5-4 is arranged on the substrate 5-5; the light emitting layer 5-3 is arranged on one side, far away from the substrate 5-5, of the second semiconductor layer 5-4, the first semiconductor layer 5-2 is arranged on one side, far away from the substrate 5-5, of the light emitting layer 5-3, and the bonding metal layer 5-1 is arranged on one side, far away from the substrate 5-5, of the first semiconductor layer 5-2; in this embodiment 1, the second semiconductor layer, the light emitting layer and the first semiconductor layer in the LED light emitting unit are made of n-GaN, multiple quantum well material and p-GaN, respectively.
S3, as shown in FIG. 3, patterning the bonding metal layer 5-1, the first semiconductor layer 5-2, the light emitting layer 5-3 and the second semiconductor layer 5-4 to form LED light emitting units 5 on the anodes 4 of the sub-pixel units, respectively; in the invention, the material of the first semiconductor layer 5-2 can be p-GaN, the material of the light emitting layer 5-3 can be a material with a multi-quantum well structure, and the material of the second semiconductor layer 5-4 can be n-GaN.
S4: as shown in fig. 4, a first isolation layer 10 is grown on the upper surface of the driving backplane 2, covers the sensing electrode 7 and the LED light-emitting unit 5, and is patterned to form a first notch 10-1 on the sensing electrode 7 and the LED light-emitting unit 5, respectively; in the present invention, the first isolation layer material may be SiN.
S5, as shown in FIG. 5, growing the image sensing layer 8 on the first isolation layer 10 corresponding to the sensing electrode 7 of the image sensor unit, and the image sensing layer 8 contacts with the sensing electrode 7 through the first notch 10-1; in the present invention, the material of the image sensing layer 8 may be a-Si, p-Si, or reduced graphene oxide.
S6, as shown in FIG. 6, growing a first film encapsulation layer 11 on the side of the first isolation layer 10 away from the driving backplane 2, and opening an electrode slot 11-1 on the first film encapsulation layer 13 of the image sensing unit, and opening a notch corresponding to the first notch 10-1 on the first film encapsulation layer 11 of the sub-pixel unit;
s7, preparing a common cathode 12 on the side of the first thin film encapsulation layer 11 far away from the driving back plate 2, growing a second thin film encapsulation layer 13 on the upper surface of the common cathode 12, and performing a patterning process on the common cathode to form a first groove 13-1 and a second groove 13-2 on the second thin film encapsulation layer 13, wherein the common cathode 12 is in contact with the upper surface of the image sensing layer 8 through an electrode slot 11-1, and the common cathode 12 is in contact with the second semiconductor layer 5-4 of the LED light-emitting unit 5 through a first notch 10-1 (i.e. an electrode slot) in the sub-pixel unit;
s8: as shown in fig. 8, red quantum dots and green quantum dots are respectively applied to the first grooves 13-1 of the red sub-pixel units 1-4 and the green sub-pixel units 1-5 by using an electrofluid printing technique to form the color conversion layers 6, and then the second isolation layers 14 are grown on the upper surfaces of the second thin film encapsulation layers 13 in the sub-pixel units, wherein the second isolation layers 14 cover the second grooves 13-2 and the color conversion layers 6; then, a crosstalk prevention layer 15 is grown on the bottom and the sidewalls in the second groove 13-2, and the crosstalk prevention layer 15 covers the second isolation layer 14. In the invention, the second isolation layer 14 may be an alumina thin film layer (with a thickness of 50 nm) to protect the quantum dot material, and the crosstalk prevention layer may be an Al thin film layer (with a thickness of 100 nm) to prevent crosstalk between pixels.
S9: as shown in fig. 9, a first Al thin film layer 9-1, a ZnSe thin film layer 9-2, and a second Al thin film layer 9-3 are sequentially grown on a second thin film encapsulation layer 13 of the image sensing unit, and are subjected to patterning processing to form a grating layer; and finally, bonding the glass packaging layer above the second film packaging layer 13 by adopting UV glue. In the invention, the thickness of the first Al thin film layer 9-1 and the second Al thin film layer 9-3 is 40nm, the thickness of the ZnSe thin film layer 9-2 is 100nm, and the distances among gratings in the grating layers in the three image sensing units are 230nm, 270nm and 360nm in sequence, which correspond to blue, green and red filter layers (grating layers) respectively to filter out P-type polarized light. In this embodiment 1, the grating layer is an Al/ZnSe/Al grating layer, and includes a first Al thin film layer, a ZnSe thin film layer, and a second Al thin film layer from bottom to top in sequence.
Fig. 10 is a circuit diagram of one structural unit (pixel) in this embodiment 1.
Example 2: as shown in fig. 14, an LED microdisplay with an image sensing function mounted thereon includes:
the pixel comprises a plurality of pixels, wherein each pixel comprises three sub-pixel units and three image sensing units, namely a red sub-pixel unit 1-1, a green sub-pixel unit 1-2, a blue sub-pixel unit 1-3, a red image sensing unit 1-4, a green image sensing unit 1-5 and a blue image sensing unit 1-6;
the driving back plate 2 is provided with a plurality of regularly arranged through holes 3, and the sub-pixel unit and the image sensing unit cover at least one through hole 3; the driving back plate 2 bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the image sensing unit comprises a sensing electrode 7, an image sensing layer 8, a first isolation layer 10, a first metal layer 18, an insulation layer 19 and a second metal layer 20, wherein the sensing electrode 7 is arranged on the upper surface of the driving backboard 2 and is in contact with the via hole 3, the first isolation layer 10 grows on the upper surface of the driving backboard 2 and covers the sensing electrode 7, first notches 10-1 are formed in the first isolation layer 10 on the sensing electrode 7 to expose part of the sensing electrode 7, and the image sensing layer 8 is arranged on one side, far away from the driving backboard 2, of the first isolation layer 10 and is in contact with the sensing electrode 7 through the first notches 10-1; the first metal layer 18 is disposed on the second thin film encapsulation layer 13 at a side far away from the driving backplate 2, the insulation layer 19 is disposed on the first metal layer 18 at a side far away from the driving backplate 2, the second metal layer 20 is disposed on the insulation layer 19 at a side far away from the driving backplate 2, the insulation layer 19 and the sensing electrode 7 in each image sensing unit are projected and overlapped on the driving backplate 2, and the thickness of the insulation layer 19 in each image sensing unit is set according to the corresponding RGB colors. In this embodiment 2, the thickness of the insulating layer 12 in the red image sensing unit is 28nm, and the thickness of the insulating layer 12 in the green image sensing unit is 15 nm; the insulating layer 12 in the blue image sensing unit was 9nm thick.
The three sub-pixel units of the light emitting area respectively comprise an anode 4 and an LED light emitting unit 5, the anode 4 is arranged on the upper surface of the driving backboard 2 and is in contact with the via hole 3, and the LED light emitting unit 5 is arranged on one side, far away from the driving backboard, of the anode 4. The LED light-emitting unit 5 comprises a first bonding metal layer 5-6, a first semiconductor layer 5-2, a light-emitting layer 5-3, a second semiconductor layer 5-4 and a second bonding metal layer 5-7, wherein the first bonding metal layer 5-6 grows on the upper surface of the anode 4; the first semiconductor layer 5-2 is positioned on one side of the first bonding metal layer 5-6 far away from the driving backboard 2; the light emitting layer 5-3 is arranged on one side of the first semiconductor layer 5-2 far away from the driving backboard 2; the second semiconductor layer 5-4 is arranged on one side, away from the driving backboard 2, of the light emitting layer 5-3, the second bonding metal layer 5-7 is arranged on one side, away from the driving backboard 2, of the second semiconductor layer 5-4, the light emitting layer 5-3 in the red sub-pixel unit 1-1 is made of a red multi-quantum well structure material, and the light emitting layer in the green sub-pixel unit 1-2 is made of a green multi-quantum well structure material; and the light emitting layer in the blue sub-pixel unit 1-3 is made of a blue multi-quantum well structure material.
The first thin film packaging layer 11 is arranged on one side, far away from the driving back plate 2, of the first isolation layer 10 and covers the image sensing layer 8 in the image sensing unit and the LED light-emitting unit 5 in the sub-pixel unit, an electrode groove 11-1 is formed in the first thin film packaging layer 11 corresponding to the image sensing layer 8 in the image sensing unit to expose a part of the image sensing layer, an electrode groove 11-1 is formed in the first thin film packaging layer 11 corresponding to the LED light-emitting unit in the light-emitting area to expose a part of the top layer (namely, the second bonding metal layer 5-7) of the LED light-emitting unit 5.
And the common cathode 12 is arranged on one side of the first thin film packaging layer 11 far away from the driving back plate 2, in the image sensing unit, the common cathode 12 is in contact with the image sensing layer 8 through an electrode groove 11-1, and in the sub-pixel unit, the common cathode 12 is in contact with the top layer of the LED light-emitting unit 5 through the electrode groove 11-1.
A second thin film encapsulation layer 13, wherein the second thin film encapsulation layer 13 is grown on one side of the common cathode 12 far away from the driving backboard 2
The glass packaging layer 16 is adhered to one side, far away from the driving back plate 2, of the second film packaging layer 13 through UV glue 17, and the UV glue is located in the frame area of the second film packaging layer 13.
In embodiment 2, the specific steps of manufacturing the LED microdisplay with an image sensing function are as follows:
s1: as shown in fig. 11, a plurality of regularly arranged via holes 3 are formed on the driving backplate 2, a conductive material is filled in the via holes 3, then a plurality of sensing electrodes 7 are formed on the upper surface of the driving backplate 2 in the image sensing area, a plurality of anodes 4 are formed on the upper surface of the driving backplate 2 in the light emitting area, the anodes 4 and the sensing electrodes 7 cover at least one via hole 3, a first isolation layer 10 is formed on the driving backplate 2 in the image sensing area and covers the sensing electrodes 7, a first notch 10-1 is formed on the first isolation layer 10, then an image sensing layer 8 is formed on the side of the first isolation layer 10 away from the driving backplate, and the image sensing layer 8 contacts the sensing electrodes 7 through the first notch 10-1; in this embodiment 2, the image sensing layer is used for identifying a biological pattern, the material of the image sensing layer may be one or more of polysilicon, amorphous silicon, or reduced graphene oxide, and the first isolation layer is an SiN layer.
S2: as shown in fig. 12, an LED light emitting unit 5 is fabricated on an anode 4 of a light emitting region using a bulk transfer and low temperature vacuum bonding technique, wherein the LED light emitting unit 5 includes a first bonding metal layer 5-6, a first semiconductor layer 5-2, a light emitting layer 5-3, a second semiconductor layer 5-4, and a second bonding metal layer 5-7, and the first bonding metal layer 5-6 is grown on an upper surface of the anode 4; the first semiconductor layer 5-2 is positioned on one side of the first bonding metal layer 5-6 far away from the driving backboard 2; the light emitting layer 5-3 is arranged on one side of the first semiconductor layer 5-2 far away from the driving backboard 2; the second semiconductor layer 5-4 is arranged on the side, away from the driving backboard 2, of the light emitting layer 5-3, the second bonding metal layer 5-7 is arranged on the side, away from the driving backboard 2, of the second semiconductor layer 5-4, then the first thin film packaging layer 11 is grown in the image sensing area and the light emitting area and is subjected to imaging processing, and the corresponding electrode groove 11-1 is formed on the first thin film packaging layer 11;
s3, as shown in FIG. 3, preparing a common cathode 12 on the side of the first film packaging layer 11 away from the driving back plate 2, wherein the common cathode 12 covers the electrode slot 11-1, and then preparing a second film packaging layer 13 on the side of the common cathode 12 away from the driving back plate 2;
s4: as shown in fig. 4, a first metal layer 18 is grown on the side of the second thin film encapsulation layer 13 away from the driving backplane 2 and patterned to cover the second thin film encapsulation layer 13 in the image sensing area, then an insulating layer 19 of different thickness is grown and patterned in the image sensing area, then a second metal layer 20 is grown and patterned on the insulating layer 19, and finally a glass encapsulation layer 16 is bonded above the second thin film encapsulation layer 13 by using UV glue 17.
In this embodiment 2, the metal material used for the first metal layer and the second metal layer is Ag or Al, and the thickness of the first metal layer and the second metal layer is 20 nm. In the present invention, the material of the insulating layer may be amorphous silicon.
In this embodiment 2, in the LED light-emitting unit, the material of the first bonding metal layer is P-pad, the materials of the first semiconductor layer and the second semiconductor layer are N-GaN, the material of the light-emitting layer is MQW (multiple quantum well light-emitting material), and the material of the second bonding metal layer is N-pad.
In this embodiment 2, the material of the first thin film encapsulation layer and the second thin film encapsulation layer may be an organic thin film, an inorganic thin film, or an inorganic thin film stacked on an organic thin film.
Example 3: as shown in fig. 18, an LED microdisplay with an image sensing function mounted thereon includes:
the pixel comprises a plurality of pixels, wherein each pixel comprises three sub-pixel units and three image sensing units, namely a red sub-pixel unit 1-1, a green sub-pixel unit 1-2, a blue sub-pixel unit 1-3, a red image sensing unit 1-4, a green image sensing unit 1-5 and a blue image sensing unit 1-6;
the driving back plate 2 is provided with a plurality of regularly arranged through holes 3, and the sub-pixel unit and the image sensing unit cover at least one through hole 3; the driving back plate 2 bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the image sensing unit comprises a sensing electrode 7, an image sensing layer 8 and a first isolation layer 10, wherein the sensing electrode 7 is arranged on the upper surface of the driving backboard 2 and is in contact with the via hole 3, the first isolation layer 10 grows on the upper surface of the driving backboard 2 and covers the sensing electrode 7, first notches 10-1 are formed in the first isolation layer 10 on the sensing electrode 7, part of the sensing electrode 7 is exposed, and the image sensing layer 8 is arranged on one side, far away from the driving backboard 2, of the first isolation layer 10 and is in contact with the sensing electrode 7 through the first notches 10-1.
The three sub-pixel units of the light emitting area respectively comprise an anode 4 and an LED light emitting unit 5, the anode 5 is arranged on the upper surface of the driving backboard 2 and is in contact with the via hole 3, and the LED light emitting unit 5 is arranged on one side, far away from the driving backboard 2, of the anode 4. The LED light emitting unit 5 is an OLED light emitting area, the OLED light emitting area comprises white OLEDs 5-8, cathodes 5-9 and SiN side walls 5-10, the white OLEDs 5-8 cover the upper surfaces of the anodes 4 and the driving back plate 2 in the light emitting area, the cathodes 5-9 are located on one side, away from the driving back plate 2, of the white OLEDs 5-8, and the SiN side walls 5-10 are located on the side edges of the white OLEDs 5-8, the cathodes 5-9 and the anodes 4.
The driving back plate comprises a first thin film packaging layer 11, wherein the first thin film packaging layer 11 is arranged on one side, far away from the driving back plate, of the first isolation layer 10 and covers the image sensing layer 8 in the image sensing unit and the LED light-emitting unit 5 in the sub-pixel unit, an electrode groove 11-1 is formed in the first thin film packaging layer 11 corresponding to the image sensing layer 8 in the image sensing unit to expose part of the image sensing layer 8, an electrode groove 11-1 is formed in the first thin film packaging layer 11 corresponding to the LED light-emitting unit 5 in the light-emitting area to expose part of the top layer (namely, a cathode 5-9) of the LED light-emitting unit 5.
And the common cathode 12 is arranged on the first film packaging layer 11 at the side far away from the driving back plate 2, in the image sensing unit, the common cathode 12 is in contact with the image sensing layer 8 through the electrode slot 11-1, and in the sub-pixel unit, the common cathode 12 is in contact with the top layer (namely, the cathode 5-9) of the LED light-emitting unit through the electrode slot 11-1.
And a second thin film encapsulation layer 13, wherein the second thin film encapsulation layer 13 is grown on one side of the common cathode 12 far away from the driving back plate 2.
The first metal layer 18 is arranged on one side, far away from the driving back plate 2, of the second thin film packaging layer 13;
an insulating layer 19, wherein the insulating layer 19 is positioned on the first metal layer 18 at the side far away from the driving back plate 2, the insulating layer 19 in each image sensing unit is projected to overlap with the sensing electrode 7 on the driving back plate 2, the insulating layer 19 in each sub-pixel unit is projected to overlap with the anode 4 on the driving back plate 2, and the thickness of the insulating layer in each image sensing unit and each sub-pixel unit is set according to the corresponding RGB color;
a second metal layer 20, wherein the second metal layer 20 is located on one side of the insulating layer 19 far away from the driving back plate 2;
and the glass packaging layer 16 is adhered to one side, far away from the driving back plate 2, of the first metal layer 18 through UV glue 17.
In embodiment 3, the specific steps of preparing an LED microdisplay with an image sensing function are as follows:
s1, as shown in fig. 15, forming a plurality of regularly arranged via holes 3 on the driving backplate 2, filling the via holes 3 with conductive material, forming a plurality of sensing electrodes 7 on the driving backplate 2 of the image sensing area, forming a plurality of anodes 4 on the driving backplate 2 of the light emitting area, the anodes 4 and the sensing electrodes 7 covering at least one via hole 3, preparing a first isolation layer 10 in the image sensing area to cover the sensing electrodes 7 and the driving backplate 2 of the image sensing area, and forming a plurality of first notches 10-1 on the first isolation layer 10, so that the first isolation layer 10 in each image sensing unit exposes part of the sensing electrodes 7, and forming an image sensing layer 8 on the side of the first isolation layer 10 away from the driving backplate, so that the image sensing layer 8 contacts the sensing electrodes 7 through the first notches 10-1;
s2, as shown in FIG. 16, evaporating white OLED5-8, cathode 5-9 and part of first film packaging layer 11 on the driving back plate in sequence, etching the white OLED to cover the anode 4 and the driving back plate 2 in the light emitting region, and then growing SiN side wall 5-10 to form LED light emitting unit 5; in embodiment 3, the cathode may be an Al thin film.
S3, as shown in fig. 17, the first thin film encapsulation layer 11 continues to be filled and grown on the driving backplane 2, and is patterned. Producing an electrode groove 11-1 in each image sensing unit and each OLED light emitting area, and then forming a common cathode 12 on the first thin film packaging layer 11 at the side far away from the driving back plate, wherein the common cathode 12 covers the electrode groove 11-1; in embodiment 3, the common cathode 12 is an ITO thin film layer.
S4, as shown in FIG. 18, continuing to grow a second thin film encapsulation layer 13 on the side of the common cathode 12 away from the driving back plate 2, then sequentially growing a first metal layer 18 and an insulation layer 19 on the second thin film encapsulation layer 13, and performing patterning treatment to form insulation layers 19 with different thicknesses, and then growing a second metal layer 20 on the insulation layer 19; finally, the glass packaging layer 16 is adhered to the upper surface of the first metal layer 18 by using UV glue 17. In this embodiment 3, the thickness of the insulating layer of the red image sensing unit 1-4 and the red sub-pixel unit 1-1 is 28 nm; the thickness of the insulating layer of the green image sensing unit 1-5 and the green sub-pixel unit 1-2 is 15 nm; the thickness of the insulating layer of the blue image sensing units 1 to 6 and the blue sub-pixel units 1 to 3 is 9 nm.
In this embodiment 3, the first isolation layer 10 is a SiN layer, and the metal material of the first metal layer 18 and the second metal layer 20 may be Ag or Al.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. An LED micro-display with an image sensing function, comprising:
the pixel structure comprises a plurality of pixels, a light source and a light source, wherein each pixel comprises a light emitting area and an image sensing area, the light emitting area comprises three sub-pixel units which are respectively a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit, and the image sensing area comprises three image sensing units which are respectively a red image sensing unit, a green image sensing unit and a blue image sensing unit;
the driving back plate is provided with a plurality of regularly arranged through holes, and the sub-pixel unit and the image sensing unit cover at least one through hole; the driving back plate bears a plurality of pixels and drives the sub-pixel units to emit light, and the sub-pixel units emit light according to the configured image sensing units;
the image sensing unit comprises a sensing electrode, a first isolation layer and an image sensing layer, the sensing electrode is arranged on the upper surface of the driving backboard and is in contact with the via hole, the first isolation layer grows on the upper surface of the driving backboard and covers the sensing electrode, first notches are formed in the first isolation layer on the sensing electrode to expose part of the sensing electrode, and the image sensing layer is arranged on one side, far away from the driving backboard, of the first isolation layer and is in contact with the sensing electrode through the first notches;
the three sub-pixel units of the light emitting area respectively comprise an anode and an LED light emitting unit, the anode is arranged on the upper surface of the driving backboard and is in contact with the via hole, and the LED light emitting unit is arranged on one side, far away from the driving backboard, of the anode.
2. The LED microdisplay with the image sensing function according to claim 1, further comprising a first thin film encapsulation layer, the first thin film encapsulation layer is disposed on the first isolation layer at a side away from the driving backplane and covers the image sensing layer in the image sensing unit and the LED light-emitting units in the sub-pixel units, the first thin film encapsulation layer corresponding to the image sensing layer in the image sensing unit is provided with electrode grooves to expose a part of the image sensing layer, and the first thin film encapsulation layer corresponding to the LED light-emitting units in the light-emitting area is provided with electrode grooves to expose a part of the top layer of the LED light-emitting units.
3. The LED microdisplay with the image sensing capability of claim 2 further comprising a common cathode disposed on the first thin film encapsulation layer on the side away from the driving backplane, and in the image sensing unit the common cathode is in contact with the image sensing layer through an electrode slot, and in the subpixel unit the common cathode is in contact with the top layer of the LED light emitting unit through an electrode slot.
4. The image sensing function-mounted LED micro-display according to claim 3, further comprising a second thin film encapsulation layer grown on the side of the common cathode away from the driving backplane.
5. The LED micro-display with the image sensing function as claimed in claim 4, wherein the LED light emitting unit comprises a bonding metal layer, a first semiconductor layer, a light emitting layer and a second semiconductor layer, the bonding metal layer is grown on the side of the anode far away from the driving back plate; the first semiconductor layer is located on one side, away from the driving backboard, of the bonding metal layer and is bonded with the bonding metal layer; the light emitting layer is arranged on one side, away from the driving backboard, of the first semiconductor layer; the second semiconductor layer is arranged on one side of the light-emitting layer far away from the driving backboard; the first isolation layer is positioned on one side, far away from the driving back plate, of the second semiconductor layer, the first isolation layer covers the driving back plate, the anode and the LED light-emitting units of the light-emitting area, notches corresponding to the electrode grooves in the light-emitting area are formed in the first isolation layer, part of the second semiconductor layer is exposed, and the light-emitting layers in the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit emit blue light.
6. The image sensing function-mounted LED micro-display according to claim 4, wherein the LED light emitting unit comprises a first bonding metal layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer and a second bonding metal layer, the first bonding metal layer is grown on the upper surface of the anode; the first semiconductor layer is positioned on one side, far away from the driving backboard, of the first bonding metal layer; the light emitting layer is arranged on one side, away from the driving backboard, of the first semiconductor layer; the second semiconductor layer is arranged on one side, away from the driving backboard, of the light emitting layer, the second bonding metal layer is arranged on one side, away from the driving backboard, of the second semiconductor layer, the light emitting layer in the red sub-pixel unit is made of a red multi-quantum well structure material, and the light emitting layer in the green sub-pixel unit is made of a green multi-quantum well structure material; and the light emitting layer in the blue sub-pixel unit is made of a blue multi-quantum well structure material.
7. The LED micro-display with the image sensing function according to claim 4, wherein the LED light emitting unit is an OLED light emitting area, the OLED light emitting area comprises a white OLED, a cathode and SiN side walls, the white OLED covers the anode in the light emitting area and the upper surface of the driving backboard, the cathode is located on one side of the white OLED, which is far away from the driving backboard, and the SiN side walls are located on the sides of the white OLED, the cathode and the anode.
8. The LED micro-display with the image sensing function according to claim 5, wherein each image sensing unit further comprises a grating layer, the grating layer is arranged on the second thin film packaging layer on the side away from the driving back plate, and the grating layer and the projection of the image sensing layer on the driving back plate are overlapped; the red sub-pixel unit and the green sub-pixel unit further comprise color conversion layers, the color conversion layers of the red sub-pixel unit comprise red quantum dots, the color conversion layers of the green sub-pixel unit comprise green quantum dots, first grooves are arranged on second film packaging layers in the red sub-pixel unit and the green sub-pixel unit, the color conversion layers are located in the first grooves, the first grooves are overlapped with projections of the light emitting layers on the driving back plate, second grooves are further arranged on the second film packaging layers, vertical projections of the second grooves on the driving back plate are located between vertical projections of the adjacent sub-pixel units on the driving back plate, a second isolation layer is arranged on one side, far away from the driving back plate, of the second film packaging layers, and the color conversion layers and the second grooves are covered by the second isolation layers, the anti-crosstalk layer is located in the second groove and covers the bottom of the second groove and the second isolation layer on the side wall of the second groove, one side, far away from the driving back plate, of the second film packaging layer is connected with the glass packaging layer through UV glue, and the UV glue is located in a frame area of the second film packaging layer.
9. The LED micro-display with the image sensing function according to claim 6, wherein the image sensing area further comprises a first metal layer, an insulating layer, a second metal layer and a glass packaging layer, the first metal layer is disposed on the second thin film packaging layer on the side away from the driving back plate, the insulating layer is disposed on the first metal layer on the side away from the driving back plate, the second metal layer is disposed on the insulating layer on the side away from the driving back plate, the insulating layer in each image sensing unit and the sensing electrode are projected and overlapped on the driving back plate, the thickness of the insulating layer in each image sensing unit is set according to the corresponding RGB color, the side of the second thin film packaging layer away from the driving back plate is bonded to the glass packaging layer through UV glue, and the UV glue is disposed on the frame region of the second thin film packaging layer.
10. The LED micro-display with image sensing function according to claim 7, further comprising a first metal layer, an insulating layer, a second metal layer and a glass encapsulation layer, the first metal layer is arranged on one side of the second thin film packaging layer far away from the driving backboard, the insulating layer is arranged on one side of the first metal layer far away from the driving backboard, the second metal layer is positioned on one side of the insulating layer far away from the driving backboard, the insulating layer in each image sensing unit and the sensing electrode are projected and overlapped on the driving backboard, the insulating layer in each sub-pixel unit and the anode are projected and overlapped on the driving backboard, the thickness of the insulating layer in each image sensing unit and each sub-pixel unit is set according to the corresponding RGB color, one side of the first metal layer, which is far away from the driving back plate, is connected with the glass packaging layer through UV glue, and the UV glue is located in the frame area of the first metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110578773.8A CN113314559B (en) | 2021-05-26 | 2021-05-26 | LED micro-display with image sensing function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110578773.8A CN113314559B (en) | 2021-05-26 | 2021-05-26 | LED micro-display with image sensing function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113314559A true CN113314559A (en) | 2021-08-27 |
| CN113314559B CN113314559B (en) | 2024-08-23 |
Family
ID=77375037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110578773.8A Active CN113314559B (en) | 2021-05-26 | 2021-05-26 | LED micro-display with image sensing function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113314559B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115867090A (en) * | 2023-03-02 | 2023-03-28 | 季华实验室 | Display panel and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007033789A (en) * | 2005-07-26 | 2007-02-08 | Sony Corp | Display device |
| US20090201229A1 (en) * | 2007-03-08 | 2009-08-13 | Seiko Epson Corporation | Light-emitting apparatus, method for producing light-emitting apparatus, and electronic apparatus |
| CN111580269A (en) * | 2020-06-08 | 2020-08-25 | 昆山梦显电子科技有限公司 | Display panel based on eyeball tracking technology, preparation method thereof and display device |
| CN111580270A (en) * | 2020-06-08 | 2020-08-25 | 昆山梦显电子科技有限公司 | Display panel based on eyeball tracking technology, preparation method thereof and display device |
| CN111611952A (en) * | 2020-05-27 | 2020-09-01 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| CN111710655A (en) * | 2020-06-18 | 2020-09-25 | 昆山梦显电子科技有限公司 | Display panel based on biological identification technology, manufacturing method thereof and display device |
| CN111880308A (en) * | 2020-07-06 | 2020-11-03 | 昆山梦显电子科技有限公司 | Display panel based on biological recognition technology, preparation method thereof and micro-display |
| CN212515218U (en) * | 2020-06-08 | 2021-02-09 | 昆山梦显电子科技有限公司 | Carry on silica-based OLED microdisplay of following up eye function |
-
2021
- 2021-05-26 CN CN202110578773.8A patent/CN113314559B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007033789A (en) * | 2005-07-26 | 2007-02-08 | Sony Corp | Display device |
| US20090201229A1 (en) * | 2007-03-08 | 2009-08-13 | Seiko Epson Corporation | Light-emitting apparatus, method for producing light-emitting apparatus, and electronic apparatus |
| CN111611952A (en) * | 2020-05-27 | 2020-09-01 | 深圳市汇顶科技股份有限公司 | Fingerprint identification device and electronic equipment |
| CN111580269A (en) * | 2020-06-08 | 2020-08-25 | 昆山梦显电子科技有限公司 | Display panel based on eyeball tracking technology, preparation method thereof and display device |
| CN111580270A (en) * | 2020-06-08 | 2020-08-25 | 昆山梦显电子科技有限公司 | Display panel based on eyeball tracking technology, preparation method thereof and display device |
| CN212515218U (en) * | 2020-06-08 | 2021-02-09 | 昆山梦显电子科技有限公司 | Carry on silica-based OLED microdisplay of following up eye function |
| CN111710655A (en) * | 2020-06-18 | 2020-09-25 | 昆山梦显电子科技有限公司 | Display panel based on biological identification technology, manufacturing method thereof and display device |
| CN111880308A (en) * | 2020-07-06 | 2020-11-03 | 昆山梦显电子科技有限公司 | Display panel based on biological recognition technology, preparation method thereof and micro-display |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115867090A (en) * | 2023-03-02 | 2023-03-28 | 季华实验室 | Display panel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113314559B (en) | 2024-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110634937B (en) | Display substrate, preparation method thereof and display device | |
| EP2888729B1 (en) | Display device using semiconductor light emitting devices | |
| KR101957147B1 (en) | Organic electro luminescent device and method of fabricating the same | |
| WO2020233284A1 (en) | Display panel and preparation method therefor, and display device | |
| US7714507B2 (en) | Organic electroluminescence display device having red, green, blue and white pixels | |
| US7656085B2 (en) | System and method for differentiating pictures and texts | |
| US12108647B2 (en) | Display substrate with light-transmitting display region | |
| CN207781652U (en) | Double face display panel and display device | |
| WO2021189475A1 (en) | Display substrate and manufacturing method therefor, and display apparatus | |
| US11563068B2 (en) | Substantially transparent display substrate, substantially transparent display apparatus, and method of fabricating substantially transparent display substrate | |
| CN113327987B (en) | Triode display with image sensing function | |
| CN110034158A (en) | Display device | |
| JP2004004811A (en) | Organic electroluminescent device and method of manufacturing the same | |
| CN113327986B (en) | Gate electrode luminous triode display | |
| CN113314559B (en) | LED micro-display with image sensing function | |
| CN112349745B (en) | Micro-LED display panel and Micro-LED display device | |
| EP4418840A1 (en) | Display substrate and display device | |
| CN113314560B (en) | Triode display based on VDMOS device and carrying image sensing function | |
| WO2019085078A1 (en) | Oled display panel and manufacturing method therefor | |
| US20210225960A1 (en) | Display device | |
| CN110376781B (en) | Substrate, preparation method thereof and display panel | |
| CN113327988B (en) | Triode display with VDMOS device structure | |
| KR102097865B1 (en) | light emitting diodes | |
| WO2024065313A1 (en) | Display panel and manufacturing method therefor, and display device | |
| CN110224010A (en) | The preparation method of oled display substrate, display panel, oled display substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |