CN113308673A - 一种高亮银色多介质薄膜真空磁控溅射制备工艺 - Google Patents
一种高亮银色多介质薄膜真空磁控溅射制备工艺 Download PDFInfo
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 21
- 239000004332 silver Substances 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 239000011241 protective layer Substances 0.000 claims abstract description 11
- 238000005477 sputtering target Methods 0.000 claims abstract description 11
- 238000004804 winding Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 93
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 48
- 238000007747 plating Methods 0.000 claims description 48
- 239000010410 layer Substances 0.000 claims description 47
- 229910052786 argon Inorganic materials 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000012788 optical film Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229910003087 TiOx Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 6
- 125000000864 peroxy group Chemical group O(O*)* 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001361 White metal Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
本发明公开了一种高亮银色多介质薄膜真空磁控溅射制备工艺，属于真空镀膜领域。本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺，采用真空磁控溅射卷绕式镀膜机，以金属铌靶(NbOx)、硅靶(Si)、铟靶(In)、钛靶(Ti)作为溅射靶材，采用特定的溅射膜层叠层顺序和膜层厚度，实现高亮银色多介质薄膜的生产，提升薄膜的金属质感和银白色亮度效果，其中增加的金属保护层还能增加本发明的一种高亮银色多介质薄膜的耐腐蚀、耐高温高湿、耐低温等功能性效果，扩展其应用场景，并延长其使用寿命。
Description
技术领域
本发明涉及真空镀膜领域，更具体地说，涉及一种高亮银色多介质薄膜真空磁控溅射制备工艺。
背景技术
现有运用磁控溅射方式制备银白色金属效果的薄膜产品多为单一介质或双层介质，较常运用的金属材质有银(Ag)、铝(Al)、铟(In)等，其膜层结构简单，制备方法简单，易实现工业量产。但近年随着市场发展的需求，产品外观要求更具特色，性能要求更严格。普通银白色产品，亮度效果及金属质感相对较弱，不能达到要求。且双层以下的介质薄膜在耐高温高湿、耐低温检测、UV老化测试、耐腐蚀方面效果较弱。本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺从外观上、结构上、功能上对现有效果进行技术改进，运用多介质膜结构，不仅有效的提升了多介质薄膜的银白色、纯白度效果和金属质感，也极大了提升了多介质膜的耐高温高湿、耐低温、耐腐蚀等功能性效果，极大的扩展了多介质膜的应用领域并增加了其使用寿命。
发明内容
1.发明要解决的技术问题
本发明的目的在于提供了一种高亮银色多介质薄膜真空磁控溅射制备工艺，通过真空磁控溅射方式，设计使用特定的溅射靶材和膜层厚度，实现耐高温高湿、耐腐蚀的高亮银色多介质薄膜生产。
2.技术方案
为达到上述目的，本发明提供的技术方案为：
一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，包括以下步骤：
步骤一：将膜料放置于磁控溅射镀膜机的真空室中，膜料与镀膜阴极表面间距为5～10cm，将真空室抽至真空，且各镀膜室压强不高于3.0E-3Pa，随后向各镀膜室充入氩气和氧气混合气；
步骤二：镀制表面光学膜层；
步骤三：镀制金属层；
步骤四：镀制金属保护层；
优选地，所述的步骤一中镀制的表面光学膜层采用Nb2O5和SiO2作为溅射靶材，首先镀制Nb2O5，膜层厚度为35～50nm，随后镀制SiO2，膜层厚度为 85～100nm。
优选地，所述步骤三中镀制的金属层采用In作为溅射靶材，膜层厚度为 25～40nm。
优选地，所述步骤四中镀制的金属保护层镀膜采用TiOx作为溅射靶材，膜层厚度为50～70nm。
优选地，所述步骤二中镀制Nb2O5薄膜时，氩气与氧气体积比为6:1～8:1。
优选地，所述步骤二中镀制SiO2薄膜时，电源电压情况需控制在350～450V 之间，氩气与氧气体积比为4:1～2:1，使SiO2分子环境处于过氧态
优选地，所述步骤三中镀制In层薄膜时，采用DC电源，工作功率为5～8kW.
优选地，所述步骤四种镀制TiOx薄膜时，氩气与氧气体积比为6:1～8:1。
优选地，所述的真空磁控镀膜使用真空磁控溅射卷绕式镀膜机，具备4靶位以上镀膜腔室结构，且镀膜腔室都为独立腔室结构，镀制过程中各独立镀膜室真压强维持在5.0E-1PA～1.0E-1PA之间。
3.有益效果
采用本发明提供的技术方案，与已有的公知技术相比，具有如下有益效果：
(1)本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺，采用真空磁控溅射方式进行膜层镀造，能够有效提升多介质薄膜的银白色、纯白度效果和金属质感；
(2)本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺，通过溅射金属保护层，有效的增强了多介质薄膜的高温、高湿、低温、UV、腐蚀耐受性。
具体实施方式
为进一步了解本发明的内容，结合实施例对本发明作进一步的描述。本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺，包括以下步骤：
步骤一：将膜料放置于磁控溅射镀膜机的真空室中，膜料与镀膜阴极表面间距为5～10cm，将真空室抽至真空，且各镀膜室压强不高于3.0E-3Pa，随后向各镀膜室充入氩气和氧气混合气；
步骤二：镀制表面光学膜层；
步骤三：镀制金属层；
步骤四：镀制金属保护层；
以上所述的步骤一中镀制的表面光学膜层采用Nb2O5和SiO2作为溅射靶材，首先镀制Nb2O5，膜层厚度为35～50nm，随后镀制SiO2，膜层厚度为85～100nm。
以上所述步骤三中镀制的金属层采用In作为溅射靶材，膜层厚度为25～40nm。
以上所述步骤四中镀制的金属保护层镀膜采用TiOx作为溅射靶材，膜层厚度为50～70nm。
以上所述步骤二中镀制Nb2O5薄膜时，氩气与氧气体积比为6:1～8:1。
以上所述步骤二中镀制SiO2薄膜时，电源电压情况需控制在350～450V之间，氩气与氧气体积比为4:1～2:1，使SiO2分子环境处于过氧态。
以上所述步骤三中镀制In层薄膜时，采用DC电源，工作功率为5～8kW.
以上所述步骤四种镀制TiOx薄膜时，氩气与氧气体积比为6:1～8:1。
以上所述的真空磁控镀膜使用真空磁控溅射卷绕式镀膜机，具备4靶位以上镀膜腔室结构，且镀膜腔室都为独立腔室结构，镀制过程中各独立镀膜室真压强维持在5.0E-1PA～1.0E-1PA之间。
本发明的一种高亮银色多介质薄膜真空磁控溅射制备工艺，有效增加了金属质感薄膜产品的纯白度和银白色亮度效果，提升了产品银色金属质感，不仅如此，增加的金属保护层也能够提升薄膜的耐高温高湿、耐低温、耐UV照射和耐腐蚀功能性，极大的扩展了产品应用领域，延长了其使用寿命。
实施例1：
使用具备4靶位以上镀膜腔室结构的真空磁控溅射卷绕式镀膜机。将膜料放置于真空室中，与阴极表面间距5cm。随后将真空室抽气至压强为3.0E-3Pa，充入氩气和氧气混合气。膜层镀制过程中，维持真空室内压强为5.0E-1Pa。
首先镀制表面光学膜，Nb2O5膜层厚度为35nm，镀制时氩气与氧气体积比为6:1；SiO2膜层厚度为85nm，镀制时电源电压控制为350V，氩气与氧气体积比为2:1，保持SiO2分子环境处于过氧态。
随后镀制金属层薄膜，In膜层厚度为25nm，镀制时采用DC电源，工作功率为5kW。
最后镀制金属保护层薄膜，TiOx厚度为50nm，镀制时氩气与氧气体积比为 6:1。
实施例2：
本实施例与实施例1基本一致，不同的是放置于真空室中的膜料与阴极表面间距7.5随后将真空室抽气至压强为3.0-4Pa，再充入氩气、氧气混合气。膜层镀制过程中，维持真空室内压强为4.0E-1Pa。
首先镀制表面光学膜，Nb2O5膜层厚度为45nm，镀制时氩气与氧气体积比为7:1；SiO2膜层厚度为90nm，镀制时电源电压控制为380V，氩气与氧气体积比为3:1，保持SiO2分子环境处于过氧态。
随后镀制金属层薄膜，In膜层厚度为35nm，镀制时采用DC电源，工作功率为7kW。
最后镀制金属保护层薄膜，TiOx厚度为60nm，镀制时氩气与氧气体积比为 7:1。
实施例3：
本实施例与实施例1基本一致，不同的是放置于真空室中的膜料与阴极表面间距10cm。随后将真空室抽气至压强为5.0E-4Pa，再充入氩气、氧气混合气。膜层镀制过程中，维持真空室内压强为1.0E-1Pa。
首先镀制表面光学膜，Nb2O5膜层厚度为50nm，镀制时氩气与氧气体积比为8:1；SiO2膜层厚度为100nm，镀制时电源电压控制为450V，氩气与氧气体积比为4:1，保持SiO2分子环境处于过氧态。
随后镀制金属层薄膜，In膜层厚度为40nm，镀制时采用DC电源，工作功率为8kW。
最后镀制金属保护层薄膜，TiOx厚度为70nm，镀制时氩气与氧气体积比为 8:1。
以上示意性的对本发明及其实施方式进行了描述，该描述没有限制性，所示的也只是本发明的实施方式之一，实际的结构并不局限于此。所以，如果本领域的普通技术人员受其启示，在不脱离本发明创造宗旨的情况下，不经创造性的设计出与该技术方案相似的结构方式及实施例，均应属于本发明的保护范围。
Claims (9)
1.一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，包括以下步骤：
步骤一：将膜料放置于磁控溅射镀膜机的真空室中，膜料与镀膜阴极表面间距为5～10cm，将真空室抽至真空，且各镀膜室压强不高于3.0E-3Pa，随后向各镀膜室充入氩气和氧气混合气；
步骤二：镀制表面光学膜层；
步骤三：镀制金属层；
步骤四：镀制金属保护层。
2.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述的步骤一中镀制的表面光学膜层采用Nb2O5和SiO2作为溅射靶材，首先镀制Nb2O5，膜层厚度为35～50nm，随后镀制SiO2，膜层厚度为85～100nm。
3.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤三中镀制的金属层采用In作为溅射靶材，膜层厚度为25～40nm。
4.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤四中镀制的金属保护层镀膜采用TiOx作为溅射靶材，膜层厚度为50～70nm。
5.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤二中镀制Nb2O5薄膜时，氩气与氧气体积比为6∶1～8∶1。
6.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤二中镀制SiO2薄膜时，电源电压情况需控制在350～450V之间，氩气与氧气体积比为4∶1～2∶1，使SiO2分子环境处于过氧态。
7.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤三中镀制In层薄膜时，采用DC电源，工作功率为5～8kW。
8.根据权利要求1所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述步骤四种镀制TiOx薄膜时，氩气与氧气体积比为6∶1～8∶1。
9.根据权利要求1～8所述的一种高亮银色多介质薄膜真空磁控溅射制备工艺，其特征在于，所述的真空磁控镀膜使用真空磁控溅射卷绕式镀膜机，具备4靶位以上镀膜腔室结构，且镀膜腔室都为独立腔室结构，镀制过程中各独立镀膜室真压强维持在5.0E-1PA～1.0E-1PA之间。
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