CN113307611A - 一种采用煤泥制备SiC晶须的方法 - Google Patents
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Abstract
本发明公开了一种采用煤泥制备SiC晶须的方法，首先采用煤泥和石英砂为主要原料，随后采用球磨进行混料得到混合粉料；然后向混合粉料加入PVB造粒后进行半干压成型得到坯体；随后升温至高温利用煤泥中被还原的低熔点金属液滴作为催化剂制备得到SiC晶须。本发明方法实现了利用煤泥制备高技术陶瓷密度，从而减少煤泥对环境危害。
Description
技术领域
本发明属于SiC晶须制备领域，具体涉及一种采用煤泥制备SiC晶须的方法。
背景技术
煤泥是煤炭生产过程中产生的一类固体废弃物，大量煤泥堆积对环境带来了极大危害，目前国内对煤泥的研究利用集中在煤泥分选、型煤制备等方面，专利CN208886757U、CN111748395A和CN109731698A分别集中在煤泥处理系统、煤泥制备煤粉和煤泥分选方面，专利CN110436473A采用高温氯化焙烧法、酸浸漂白和还原漂白等组合工艺，达到去碳、活化高岭石、降低铁含量等目的，为煤泥制备高纯度分子筛提供了可能性。也有部分研究集中在采用煤泥制备生态缓释肥料、腐植酸、生物质型煤、分子筛、活性炭方面，也有部分研究集中在将煤泥作为原料添加成分制备烧结类制品，例如建筑用砖瓦、陶粒和蓄热陶瓷。宁东地区是我国13个亿吨级煤炭生产基地之一，也是煤泥堆积的主要区域之一。目前宁东地区煤泥的应用主要集中在火力发电方面，因而研发也主要集中在煤泥的选洗工艺，高新技术方面研究利用比较少。从元素组成来看宁东地区煤泥主要成分是SiO2、含碳成份和一定量重金属元素，高温氩气气氛反应生成的CO将重金属元素还原至低价，满足晶须生成的VLS机制条件，因而探求煤泥在SiC晶须方面应用无疑具有极大研究意义。
发明内容
本发明的目的在于提供一种采用煤泥制备SiC晶须的方法，以达到利用煤泥制备高性能陶瓷目的。
为达到上述目的，一种采用煤泥制备SiC晶须的方法，包括以下步骤：
步骤一：将煤泥、石英砂按照一定比例初步混合后放入行星球磨罐中，采用行星球磨机球磨1h；
步骤二：将浆料干燥后加入适量5%PVB水溶液造粒，采用粉末压片机压制成型，随后在氩气气氛下烧结，即可得到SiC晶须。
进一步地，步骤一中的添加石英砂和煤泥内部石英砂摩尔质量和与煤泥中碳摩尔含量占比接近1:1。
进一步地，步骤一中的行星式球磨机长时间球磨目的是为了进一步降低添加石英砂粒度，提高混料级别。
进一步地，步骤二中PVB水溶液加入量为混合粉料质量的5%。
进一步地，步骤二中成型压力为50MPa。
进一步地，步骤二中晶须生成温度大致在1600-1800°C范围之间。
与现有煤泥利用技术相比，本发明具有以下有益的技术效果：
本发明煤泥和石英砂作为原料制备碳化硅晶须，实现了利用煤泥制备高性能陶瓷材料目的；有效利用了煤泥内部重金属成份、有机质高温裂解形成的多孔碳和煤泥中粘土质矿物形成的SiO2成份；煤泥中多孔碳和高温形成的SiO2成份具有较高的混料级别，更容易制备SiC晶须。最后为煤泥类固废高技术含量利用提供了技术指导，减少了煤泥对环境危害。
附图说明
图1—5本发明不同实施例制备的样品形貌图。
具体实施方式
下面结合实施例3对本发明做进一步的详细说明，所述是对本发明的解释而不是限定。
步骤一：将煤泥、石英砂和去离子水按照一定比例初步混合后放入行星球磨罐中，采用行星球磨机球磨1h；
步骤二：将浆料干燥后加入适量5%PVB水溶液造粒，采用粉末压片机压制成型，随后在氩气气氛下烧结，烧结温度为1700ºC，保温时间为2h，即可得到SiC晶须。
随后分别在1600 ºC和1800 ºC保温2h，1700 ºC分别保温1和2h，制备SiC晶须，形成实施例1、5、2和4。
Claims (8)
1.一种采用煤泥制备SiC晶须的方法，其特征在于，包括以下步骤：
步骤一：将煤泥、石英砂按照一定比例初步混合后放入行星球磨罐中，采用行星球磨机球磨1h；
步骤二：将浆料干燥后加入适量5%PVB水溶液造粒，采用粉末压片机压制成型，随后在氩气气氛下烧结，即可得到SiC晶须。
2.根据权利要求1所述的一种煤泥制备SiC晶须的方法，其特征在于，步骤一中的煤泥选自宁夏灵武地区梅花井矿区，石英砂粒度小于100目。
3.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤一中的煤泥主要化学成分是SiO2和Al2O3，以粘土质矿物为主。
4.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤一中煤泥中含碳有机质主要以芳香环、脂肪族为主。
5.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤一中煤泥和石英砂质量比为1:1。
6.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤二中干压成型的成型压力为50MPa。
7.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤二中300-600°C要缓慢升温，以保证有机质裂解成多孔碳过程缓慢进行。
8.根据权利要求1所述的一种采用煤泥制备SiC晶须的方法，其特征在于，步骤二中晶须生成温度大致在1600-1800°C范围之间。
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| CN114149274A (zh) * | 2021-12-14 | 2022-03-08 | 中国建筑材料工业地质勘查中心宁夏总队 | 一种采用煤泥作为造孔剂制备定向多孔SiC陶瓷方法 |
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