CN113299594B - Post-processing method for blue film sticking of TVS chip - Google Patents
Post-processing method for blue film sticking of TVS chip Download PDFInfo
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- CN113299594B CN113299594B CN202110572123.2A CN202110572123A CN113299594B CN 113299594 B CN113299594 B CN 113299594B CN 202110572123 A CN202110572123 A CN 202110572123A CN 113299594 B CN113299594 B CN 113299594B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
The invention provides a processing method for a TVS chip after being pasted with a blue film, which comprises the following steps: s1, preparing a wafer: taking the ground wafer for later use; s2, laser half-cutting through: the wafer is cut through along the scribing channel by a laser cutting machine; s3, pasting a blue film: pasting a blue film on the uncut surface of the wafer; s4, primary baking: placing the wafer pasted with the blue film into a constant-temperature oven for baking, wherein the side, pasted with the blue film, of the wafer is arranged upwards; s5, splitting: rolling the wafer by using a roller and cracking the wafer into core particles; s6, crystal expansion: placing the core particles with the blue films on a crystal expanding machine for crystal expansion; s7, stretching the blue film; placing the core particles with the blue films on a heating platform of a crystal expanding machine, wherein the blue film surfaces of the core particles are downward, and simultaneously drawing and baking the periphery of the core particles; and S8, ending the operation. Through eight processing steps that set gradually, help improving the homogeneity and the regularity of core grain arrangement, and help reducing the condition emergence that the core grain scatters, and then help improving post-processing encapsulation efficiency and quality.
Description
Technical Field
The invention relates to the technical field of chip processing, in particular to a processing method for a TVS chip after being pasted with a blue film.
Background
At present, a common processing technology of a blue film chip is that a blade is used for cutting through a blue film after a GPP (glass passivation) chip is pasted with the blue film, the blade is in a loose particle state due to large mechanical stress damage, the GPP chip uses glass as a passivation layer, the GPP chip is poor in brittleness, crystal grains are easy to generate internal damage under stress, and meanwhile, the damage is not found in time due to compactness between the crystal grains and the blue film, and finally the crystal grains at a terminal are damaged, so that the product quality is reduced.
The existing Chinese patent with publication number CN111092045A discloses a novel GPP chip blue film processing method, which comprises the following steps: 1.1 Laser half-cut through; the wafer is cut through along the etching path in a half-cutting mode, the cutting speed is 100-300mm/s, the cutting frequency is 30-90Khz, the cutting power is 75% +/-15%, the cutting depth is 1/4-2/3, and the width of a cutting mark is 20-60 um;1.2 A wafer, which is half-cut through, is broken into a particle along the cutting trace; coating IPA protective solution on the P/N surfaces of the wafer, covering a cracking protective film on the P/N surfaces, and cracking the wafer into particles along the half-cut through mark by using a nylon rolling rod; 1.3 N-face lift-off sheet protective film; uncovering the N surface of the film plate to enable the P surfaces of the crystal grains to be regularly distributed on the P surface of the film plate, and airing; 1.4 Attaching a blue film; and pasting the N surface of the crystal grain on the blue film, and uncovering the P surface film plate to obtain a finished product of the laser-cut blue film delivery product.
The inventor thinks that the core particles are easy to scatter before the blue film is pasted, the arrangement is irregular after the blue film is pasted, the core particle corners are easy to damage in the gapless carrying and taking processes, and the chip blue film processing method in the prior art has a part to be improved.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a processing method for a TVS chip after a blue film is attached.
The processing method for the TVS chip after being pasted with the blue film, provided by the invention, comprises the following steps of: s1, preparing a wafer: taking the ground wafer for later use; s2, laser half-cutting through: using a laser cutting machine to cut the wafer through along the scribing channel; s3, pasting a blue film: pasting a blue film on the uncut surface of the wafer; s4, primary baking: placing the wafer pasted with the blue film into a constant-temperature oven for baking, wherein the side, pasted with the blue film, of the wafer is arranged upwards; s5, splitting: rolling the wafer by using a roller and cracking the wafer into core particles; s6, crystal expansion: placing the core particles with the blue films on a crystal expanding machine for crystal expansion; s7, stretching the blue film; placing the core particles with the blue films on a heating platform of a crystal expanding machine, wherein the blue film surfaces of the core particles are downward, and simultaneously drawing and baking the periphery of the core particles; and S8, ending the operation.
Preferably, aiming at the step S2 of laser half-cutting, the cutting speed of the laser cutting machine is 125-150mm/S, the cutting frequency is 35-45KHz, the cutting power is 45% -66%, the cutting depth is 1/2-2/3, and the width of a cutting mark is 38-53um.
Preferably, aiming at the step S2 of laser half-cutting through, the cutting speed of the laser cutting machine is 150mm/S, the cutting frequency is 45KHz, the cutting power is 58%, the cutting depth is 90um, and the cutting trace width is 43 +/-5 um.
Preferably, for step S2 laser half-cut through, two cutting steps are included; cutting for the first time: the cutting speed of the laser cutting machine is 125mm/s, the cutting frequency is 35KHz, and the cutting power is 66%; and (3) cutting for the second time: the cutting speed of the laser cutting machine is 150mm/s, the cutting frequency is 45KHz, and the cutting power is 45 percent; the cutting depth was 110um and the kerf width was 43 + -5 um.
Preferably, for the preliminary baking in step S4, the baking temperature is 80 degrees celsius, and the baking time is 5 minutes.
Preferably, step S5.1 cleaning and step S5.2 baking again are provided in sequence between step S5 and step S6.
Preferably, step S5.1, cleaning: and (4) placing the core particles with the blue films on a cleaning machine for cleaning.
Preferably, step S5.2, baking again: and (3) putting the cleaned core particles with the blue films into a constant-temperature oven for baking, wherein the surface of the core particles with the blue films faces downwards, the baking time is 30 minutes, and the baking temperature is 80 ℃.
Preferably, for the crystal expansion in step S6, the crystal expansion temperature is 60 degrees, and the crystal expansion time is 2.5 minutes.
Preferably, the blue film is stretched for step S7: and (3) pasting the steel ring on the pasting surface of the core particle with the blue film in the middle, wherein the film drawing temperature is 60 ℃, and the film drawing time is 3-5 minutes.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the steps of preparing the wafer, semi-cutting through the laser, pasting the blue film, primarily baking, splitting, expanding the crystal and stretching the blue film are sequentially arranged, so that the uniformity and regularity of the arrangement of the core particles are improved, the scattering of the core particles is reduced, and the post-processing packaging efficiency and quality are improved;
2. according to the invention, through the cleaning step and the secondary baking step, silicon dust attached to the cracked core particles is cleaned, which is beneficial to improving the quality of the processed chip;
3. according to the invention, through laser cutting, the quality problems of low cutting speed, stress damage and the like of the blade are solved, the processing efficiency and quality of the chip are improved, and the stress damage is reduced.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic flow chart showing the overall steps of a post-processing method for attaching a blue film to a chip according to the present invention;
FIG. 2 is a schematic diagram of a wafer after laser half-cut according to the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
As shown in fig. 1 and fig. 2, the method for post-processing a TVS chip blue film according to the present invention includes the following steps:
s1, preparing a wafer: and taking the ground wafer for later use.
S2, laser half-cutting through: and a laser cutting machine is used for half-cutting the wafer along the scribing track, the cutting speed of the laser cutting machine is 125-150mm/s, the cutting frequency is 35-45KHz, the cutting power is 45-66%, the cutting depth is 1/2-2/3, and the width of a cutting trace is 38-53um.
S3, pasting a blue film: and placing the wafer after the laser half-cutting through on a film sticking machine, and sticking a blue film on the uncut surface of the wafer.
S4, primary baking: and (3) baking the wafer pasted with the blue film in a constant-temperature oven, wherein the surface of the wafer pasted with the blue film is arranged upwards, the baking temperature is 80 ℃, and the baking time is 5 minutes.
S5, splitting: and (3) placing the wafer with the blue film on the splinter protection film, enabling the side of the wafer with the blue film to face upwards, rolling the wafer by using a nylon rolling rod and a scribing channel in parallel, and splitting the wafer into core particles.
S5.1, cleaning: and (3) cleaning the core particles with the blue films on a cleaning machine, so that the silicon dust attached to the core particles is cleaned.
S5.2, baking again: and (3) putting the cleaned core particles with the blue films into a constant-temperature oven for baking, wherein the surfaces of the core particles with the blue films are arranged downwards, the baking time is 30 minutes, and the baking temperature is 80 ℃.
S6, crystal expansion: and placing the core particles with the blue films on a crystal expanding machine for crystal expansion, wherein the crystal expanding temperature is 60 ℃, the crystal expanding time is 2.5 minutes, and the crystal expanding machine is a wafer expanding machine.
S7, stretching the blue film; the steel ring is pasted on the veneering of the core particles with the blue films in the middle, then the core particles with the blue films are placed on a heating platform of a crystal expanding machine, the core particles with the blue films face downwards, the film drawing temperature is 60 ℃, the periphery of the core particles are baked while drawing, the tension is uniform, the blue films are prevented from retracting, the films in the steel ring are leveled and have no wrinkles, and the film drawing time is controlled within 3-5 minutes.
And S8, ending the operation.
This application has solved core grain arrangement irregularity, scattered scheduling problem through a series of processing of laser half cut-through back pad pasting, has reached the effect that improves postprocessing encapsulation efficiency and quality.
Modification example 1
Aiming at step S2, laser half-cutting through: the wafer is cut through along the scribing way by the laser cutting machine, the cutting speed of the laser cutting machine is 150mm/s, the cutting frequency is 45KHz, the cutting power is 58%, the cutting depth is 90um, and the width of the cutting mark is 43 +/-5 um.
Modification 2
Aiming at the step S2 of laser half-cutting through, the method comprises two cutting steps: cutting for the first time: the cutting speed of the laser cutting machine is 125mm/s, the cutting frequency is 35KHz, and the cutting power is 66%. And (3) cutting for the second time: the cutting speed of the laser cutting machine is 150mm/s, the cutting frequency is 45KHz, and the cutting power is 45 percent; the cutting depth was 110um and the kerf width was 43 + -5 um.
Principle of operation
In the work, a wafer preparation step, a laser half-cutting step, a blue film pasting step, a primary baking step, a splitting step, a cleaning step, a secondary baking step, a crystal expansion step and a blue film stretching step are sequentially carried out; firstly, taking a ground wafer for standby, cutting the wafer through along a scribing way by using a laser cutting machine, then pasting a blue film on the uncut surface of the wafer, then putting the wafer pasted with the blue film into a constant-temperature oven for baking, then rolling the wafer by using a rolling rod and cracking the wafer into core particles, then putting the core particles with the blue film on a cleaning machine for cleaning, then putting the cleaned core particles with the blue film into the constant-temperature oven for baking, then putting the core particles with the blue film on a crystal expanding machine for crystal expansion, then putting the core particles with the blue film on a heating platform of the crystal expanding machine for stretching the blue film, and finally finishing the operation; through a series of processing of the film after the laser half-cutting through, the problems of irregular arrangement, scattering and the like of core particles are solved, and the effect of improving the post-processing packaging efficiency and quality is achieved.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (7)
1. A processing method for a TVS chip after being pasted with a blue film is characterized by comprising the following steps:
s1, preparing a wafer: taking the ground wafer for later use;
s2, laser half-cutting through: the wafer is cut through along the scribing channel by a laser cutting machine;
s3, pasting a blue film: pasting a blue film on the uncut surface of the wafer;
s4, primary baking: placing the wafer pasted with the blue film into a constant-temperature oven for baking, wherein the side, pasted with the blue film, of the wafer is arranged upwards;
s5, splitting: rolling the wafer by using a roller and cracking the wafer into core particles;
s6, crystal expansion: placing the core particles with the blue films on a crystal expanding machine for crystal expansion;
s7, stretching the blue film; placing the core particles with the blue films on a heating platform of a crystal expanding machine, wherein the blue film surfaces of the core particles are downward, and simultaneously drawing and baking the periphery of the core particles;
s8, ending the operation;
step S5.1 cleaning and step S5.2 secondary baking are sequentially arranged between step S5 and step S6;
step S5.1, cleaning: placing the core particles with the blue films on a cleaning machine for cleaning;
step S5.2, baking again: and (3) putting the cleaned core particles with the blue films into a constant-temperature oven for baking, wherein the surface of the core particles with the blue films faces downwards, the baking time is 30 minutes, and the baking temperature is 80 ℃.
2. The method for processing the TVS chip with the blue film as claimed in claim 1, wherein aiming at the step S2 of laser half-cut through, the cutting speed of the laser cutting machine is 125-150mm/S, the cutting frequency is 35-45KHz, the cutting power is 45% -66%, the cutting depth is 1/2-2/3, and the width of the cutting mark is 38-53um.
3. The method as claimed in claim 1, wherein for the step S2 of laser half-cutting, the cutting speed of the laser cutting machine is 150mm/S, the cutting frequency is 45KHz, the cutting power is 58%, the cutting depth is 90um, and the cutting trace width is 43 ± 5um.
4. The method for post-processing the TVS chip with the blue film as claimed in claim 1, wherein the step S2 of laser half-cutting comprises two cutting steps;
cutting for the first time: the cutting speed of the laser cutting machine is 125mm/s, the cutting frequency is 35KHz, and the cutting power is 66%;
and (3) cutting for the second time: the cutting speed of the laser cutting machine is 150mm/s, the cutting frequency is 45KHz, and the cutting power is 45 percent; the cutting depth is 110um and the width of the cutting trace is 43 + -5 um.
5. The method as claimed in claim 1, wherein the baking temperature is 80 ℃ and the baking time is 5 minutes for the primary baking in step S4.
6. The method for processing the TVS chip with the blue film attached thereon according to claim 1, wherein for the step S6 of crystal expansion, the crystal expansion temperature is 60 degrees, and the crystal expansion time is 2.5 minutes.
7. The TVS chip blue tape post-processing method of claim 1, wherein the step S7 of stretching the blue film comprises: and (3) pasting the steel ring on the pasting surface of the core particle with the blue film in the middle, wherein the film drawing temperature is 60 ℃, and the film drawing time is 3-5 minutes.
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