CN113299537A - Integrated narrow-frame photoelectric detector and manufacturing method thereof - Google Patents
Integrated narrow-frame photoelectric detector and manufacturing method thereof Download PDFInfo
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- CN113299537A CN113299537A CN202110459048.9A CN202110459048A CN113299537A CN 113299537 A CN113299537 A CN 113299537A CN 202110459048 A CN202110459048 A CN 202110459048A CN 113299537 A CN113299537 A CN 113299537A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/28—Vessels, e.g. wall of the tube; Windows; Screens; Suppressing undesired discharges or currents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/26—Sealing together parts of vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/32—Sealing leading-in conductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/4453—PMT
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Abstract
The invention discloses an integrated narrow-frame photoelectric detector and a manufacturing method thereof, which can be used in the fields of micro-light detection, particle detection, nuclear radiation detection and the like, and solves the technical problems that the effective detection area ratio is difficult to improve due to a circular structure of a vacuum photoelectric detector in the prior art, and the insulativity is poor due to the fact that an insulating gasket is too thin due to welding of a microchannel plate electron multiplier assembly. The integrated narrow-frame photoelectric detector comprises a cathode window, a photocathode, a microchannel plate electron multiplier, an insulating tube shell, a charge collection anode, an electrode lead and an indium seal groove. Meanwhile, the invention also provides a manufacturing method of the integrated narrow-frame photoelectric detector, which has the advantages of high detection efficiency, large effective detection area ratio, compact structure, easiness in processing and manufacturing and the like.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection imaging, and particularly relates to a microchannel plate type photoelectric detector which has a large effective detection area and is convenient to manufacture, and can be used in the fields of low-light-level detection, particle detection, nuclear radiation detection and the like.
Background
The photoelectric detection imaging technology is a technology for converting optical signals into electric signals for detection, and has wide application in various fields of national economy. The microchannel plate is composed of a plurality of micro channelsEach channel of the formed glass sheet is equivalent to an independent electron multiplier, and the glass sheet multiplies and amplifies electron signals, so that weak signals can be detected, and the glass sheet has quick time response and two-dimensional space resolution capability. Typical photo detectors, image intensifiers and fast response photomultiplier tubes, which are manufactured by using microchannel plates as core components, play an important role in the field of micro-light detection. The image intensifier and the photomultiplier are both electric vacuum devices, the electric vacuum process is complicated, and particularly, the high-airtightness sealing of ceramic and metal with small spacing is difficult (the welding leakage rate is usually less than 1E-11 Pa.m3S) to lower the survival rate and increase the cost. For some special-requirement square photomultiplier tubes with large effective area, the circular structure in the prior art is difficult to improve the effective detection area ratio.
Chinese patent CN107389187B discloses a position sensitive anode detector and its manufacturing method, wherein the tube shell of its microchannel plate type photomultiplier and image intensifier is made by sealing multilayer ceramic ring and metal ring, wherein the metal ring is connected with the electrode ring of the microchannel plate and the electrode ring of the cathode, anode/fluorescent screen by spot welding for supplying power to the microchannel plate and the cathode, anode/fluorescent screen, and the ceramic ring is used for insulating and separating each electrode ring. In order to obtain high space-time resolution, the thickness of the ceramic ring (i.e. the distance between the metal rings) should be as small as possible, but the thickness of the ceramic ring is limited by the difficulty of the process, and the ceramic ring can only be about 1mm at present, usually more than 2mm, and is easy to break when being processed too thin. In addition, when the ceramic ring is welded with the metal ring, two ends of the ceramic ring need to be metallized first, so that the insulativity of the ceramic ring is inevitably reduced, and the high-voltage resistance is poor. In order to detect as many signals as possible in the effective space, a large effective detection area ratio is required, that is, the widths of the end faces of the ceramic ring and the metal ring should be as narrow as possible, but the smaller the width, the more difficult the welding between the ceramic ring and the metal ring is, and the more difficult the airtightness is to be ensured. The photomultiplier has a larger number of microchannel plates than the image intensifier, accordingly, the sealing surface is increased, the leakage rate is higher, and the difficulty in manufacturing the square photomultiplier is higher.
Disclosure of Invention
The technical problem that the effective detection area ratio is difficult to improve due to the circular structure of a vacuum photoelectric detector in the prior art, and the insulativity is poor due to the fact that an insulating gasket is too thin due to welding of a microchannel plate electron multiplier assembly is solved; the invention provides an integrated narrow-frame photoelectric detector and a manufacturing method thereof. The invention has the advantages of high detection efficiency, large effective detection area ratio, compact structure, easy processing and manufacturing, and the like.
The technical solution of the invention is as follows:
an integrated narrow-frame photoelectric detector comprises a cathode window 1, a photocathode 2, a microchannel plate electron multiplier 3, an insulating tube shell 4, a charge collection anode 5, an electrode lead 6 and an indium seal groove 7;
the cathode window 1 is arranged at the upper end of the insulating tube shell 4 and forms a vacuum sealing chamber with the insulating tube shell 4; the photoelectric cathode 2 is arranged on the lower surface of the cathode window 1; the microchannel plate electron multiplier 3 is positioned in the vacuum sealed cavity and is fixedly connected with the insulating tube shell 4;
the method is characterized in that:
the charge collecting anode 5 is arranged on the bottom surface 401 of the insulating tube shell 4, and an anode pin 502 of the charge collecting anode extends out of the insulating tube shell 4 through an anode pin hole 501 arranged on the bottom surface 401;
one end of the electrode lead 6 is connected with the microchannel plate electron multiplier 3, and the other end penetrates through the bottom surface 401, extends out of the vacuum chamber and is connected with an external power supply; the electrode lead 6 is sealed and connected with the electrode lead hole 601 on the bottom surface 401 in a vacuum sealing way;
the insulating tube shell 4 is a groove-shaped cuboid or cube or cylinder, and an integrated structure is formed by a bottom surface 401 and a side surface 402; a clamping groove 403 is formed in the side surface 402, and the microchannel plate electron multiplier 3 is connected with the insulating tube shell 4 in a clamping mode through the clamping groove 403;
the cross section of the microchannel plate electron multiplier 3 is rectangular, square or round, and the shape of the cross section is matched with that of the insulating tube shell 4;
the indium sealing groove 7 is arranged between the cathode window 1 and the upper end face of the insulating tube shell 4 and is sealed and connected with the insulating tube shell 4 in a vacuum sealing mode.
Further, the upper end face of the side face 402 of the insulating tube shell 4 is soldered and sealed with the indium sealing groove 7;
the insulating tube shell 4 is made of ceramic or glass material, and the wall thickness of the side face 402 is 0.2mm-3 mm.
Further, the microchannel plate electron multiplier 3 comprises one or more layers of microchannel plate assemblies;
each layer of the microchannel plate assembly comprises a metal electrode thin sheet ring 302, a microchannel plate 301 and a metal electrode thin sheet ring 302 which are sequentially stacked; one or more insulating gaskets 303 are arranged between the micro-channel plate assembly and the cathode window 1 and between the micro-channel plate assembly and the bottom surface 401;
the electrode lead 6 is welded on the metal electrode thin sheet ring 302;
the inner surface of the cathode window 1 is a plane or a convex surface;
the thickness of the insulating gasket 303 is 0.2mm-2 mm;
the thickness of the metal electrode thin sheet ring (302) is 0.02mm-1 mm;
the distance between the upper-layer microchannel plate 301 and the cathode window 1 is 0.1mm-5 mm;
the distance between the lower microchannel plate 301 and the charge collecting anode 5 is 0.5mm to 10 mm.
Further, the electrode lead 6 is in braze sealing with the electrode lead hole 601 on the bottom surface 401;
the photocathode 2 is attached to the inner surface of the cathode window 1 in an evaporation mode; the thickness of the photocathode 2 is 10nm-1 μm; the photocathode 2 is a CsKNaSb multi-alkali cathode responding to visible light, or CsK2Sb double-alkali cathode, or Cs responsive to ultraviolet light2Te，CsI，Rb2Te or K2A TeCs cathode, or a gold cathode, or an AgOCs, GaAs (Cs), or InGaAs (Cs) cathode responsive to infrared light;
the charge collection anode 5 is attached to the bottom surface 401 in a film coating mode; the anode pin 502 and the anode pin hole 501 are soldered and sealed;
the cathode window 1 is made of borosilicate glass, purple glass, quartz glass or magnesium fluoride and sapphire materials;
the insulating spacer 303 is made of ceramic or mica.
Further, the charge collecting anode 5 is a single anode or a position sensitive anode; the position sensitive anode is a charge division type anode, a delay line anode, a wedge strip type anode or a cross strip anode; the thickness of the charge collecting anode 5 is 0.1mm-5 mm;
the welding leakage rate of the brazing is less than or equal to 1E-11 Pa.m3/s。
Meanwhile, the invention provides a manufacturing method of the integrated narrow-frame photoelectric detector, which is characterized by comprising the following steps of:
the anode pin 502 is welded and sealed with the anode pin hole 501, and the other end of the anode pin 502 extends out of the insulating tube shell 4;
manufacturing a charge collection anode 5 on the bottom surface 401 of the insulating tube shell 4;
step 6, placing the cathode window 1, the cathode material and the insulating tube shell 4 in a cathode preparation chamber, electronically scouring the microchannel plate 301, evaporating the photocathode 2 on the inner surface of the cathode window 1 by using the cathode material, monitoring the photocurrent change in the evaporation process until the sensitivity reaches an optimal value, and stopping evaporation;
and 7, transferring the cathode window 1 to an electron multiplier cavity, heating the indium to a molten state, placing the cathode window 1 at the upper end of the insulating tube shell 4, and cooling and solidifying to finish sealing.
Further, in step 5, the microchannel plate electron multiplier 3 may stack one or more sets of microchannel plate assemblies, where the microchannel plate assemblies include a metal electrode thin sheet ring 302, a microchannel plate 301, and a metal electrode thin sheet ring 302, which are stacked in sequence;
one or more insulating gaskets 303 are arranged between the micro-channel plate assembly and the cathode window 1 and between the micro-channel plate assembly and the bottom surface 401;
and step 7, before the microchannel plate 301 is subjected to electronic washing, performing vacuum high-temperature baking and exhausting on each part of the insulating tube package 4 which is provided with the microchannel plate electron multiplier 3 and sealed with the indium seal groove 7.
Further, in step 3, the charge collecting anode 5 is a single anode or a position sensitive anode; the position sensitive anode is a charge division type anode, a delay line anode, a wedge strip type anode or a cross strip anode; the thickness of the charge collection anode (5) is 0.1mm-5 mm;
the manufacturing of the charge collecting anode 5 on the bottom surface 401 of the insulating tube shell 4 specifically comprises the following steps: welding a charge collecting anode 5 on the bottom surface 401 of the insulating tube shell 4;
or, a high-resistance film is plated on the bottom surface 401 of the insulating tube 4, and the surface resistance of the plated film is 250kohm/m2—10Mohm/m2；
In step 5, insulating spacers 303 are placed between each set of microchannel plate assemblies.
Further, in step 2, the electrode lead 6 and the electrode lead hole 601 are sealed by brazing; the anode pin 502 and the anode pin hole 501 are sealed by brazing;
in the step 3, the charge collecting anode 5 and the insulating tube shell 4 are sealed by brazing;
in step 4, the insulating tube shell 4 is Al2O3Ceramic or glass material with content not less than 95%; if the insulating tube shell 4 is made of ceramic, the insulating tube shell and the indium sealing groove 7 are sealed by brazing; if the insulating tube shell 4 is made of glass, laser welding is adopted between the insulating tube shell and the indium seal groove 7;
the welding leakage rate of the brazing is less than or equal to 1E-11 Pa.m3/s；
And the step of testing the sealing performance of the welding position is also included after the brazing.
Further, in step 1, the insulating tube housing 4 with an integrated structure is manufactured by mold forming, 3D printing or welding the side surface 402 and the bottom surface 401 into an integrated structure.
Compared with the prior art, the invention has the following beneficial effects:
1) the insulating tube shell of the integrated narrow-frame photoelectric detector can be manufactured into a square shape through die forming, 3D printing or welding of the side surface and the bottom surface into an integrated structure, so that the integrated narrow-frame photoelectric detector can be spliced into an array format, the effective detection area is increased, the dead zone problem caused by gaps in the array splicing process is avoided, and the detection efficiency is improved.
2) The insulating tube shell of the integrated narrow-frame photoelectric detector is of an integrated structure, and only the insulating shell and the cathode window need to be sealed and connected for one time, so that the rejection rate of the detector caused by multiple sealing and connection is reduced, the processing difficulty is reduced, the sealing and connecting survival rate is improved, and the manufacturing cost of an electric vacuum device is reduced.
3) According to the manufacturing method of the integrated narrow-frame photoelectric detector, the welding can be completed without the requirement that the width size of the sealing end face of the insulating shell is large enough, and the wall thickness of the insulating shell is reduced, so that the effective detection area is increased, and the detection efficiency is improved.
4) The power supply electrode lead of the integrated narrow-frame photoelectric detector is led out from the bottom of the detector, the side size is not additionally occupied like the electrode lead of the existing detector, and the electrode lead of the existing detector is not required to be subjected to insulating encapsulation to avoid dead zone increase, so that the effective detection area is further increased.
5) According to the integrated narrow-frame photoelectric detector manufacturing method, the insulating tube shell can be manufactured in a 3D printing mode, and a new manufacturing mode is brought to a traditional electric vacuum process.
6) The microchannel plate electron multiplier assembly in the integrated narrow-frame photoelectric detector manufacturing method is fixed by the clamping groove, welding is not needed, the technical problem that insulation performance is poor due to the fact that the insulation gasket is too thin is not needed to be considered, the thickness of the insulation gasket is reduced, close-to-close distance is reduced, the number of microchannel plate electron multipliers is increased flexibly, and performance of the detector is improved.
7) In the manufacturing method of the integrated narrow-frame photoelectric detector, the cathode window and the insulating tube shell are sealed through the indium sealing groove, so that the sealing survival rate is improved.
Drawings
Fig. 1 is a schematic structural diagram of an integrated narrow-bezel photodetector according to the present invention.
Fig. 2 is a schematic structural diagram of an insulating tube and a charge collecting anode of the integrated narrow-frame photodetector of the present invention.
Description of reference numerals:
1-cathode window, 2-photocathode, 3-microchannel plate electron multiplier, 301-microchannel plate, 302-metal electrode thin sheet ring, 303-insulating gasket, 4-insulating tube shell, 401-bottom surface, 402-side surface, 403-clamping groove, 5-charge collecting anode, 501-anode pin hole, 502-anode pin, 6-electrode lead, 601-electrode lead hole and 7-indium sealing groove.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
As shown in fig. 1, the integrated narrow-frame photodetector of the present invention includes a cathode window 1, a photocathode 2, a microchannel plate electron multiplier 3, an insulating tube 4, a charge collecting anode 5, an electrode lead 6, and an indium-sealed groove 7.
The insulating case 4 of the present invention is formed by a groove-shaped bottom surface 401 and a side surface 402, and may be a cylindrical, rectangular or square structure. The upper end surface of the side surface 402 of the insulating tube shell 4 is sealed with the cathode window 1 through an indium sealing groove 7 to form a vacuum sealing chamber; the electrode lead hole 601 and the anode pin hole 501 are disposed on the bottom surface 401; the locking groove 403 is arranged on the side face 402 of the insulating housing 4, the wall thickness of the side face 402 being 0.2mm to 3 mm.
In order to increase the effective detection area, the electron multiplier 3 of the microchannel plate is disposed inside the insulating housing 4, and in order to improve the temporal and spatial resolution and reduce the distance between the photocathode 2 and the microchannel plate 301, the inner surface of the cathode window 1 may also be convex, and in this embodiment, the inner surface of the cathode window 1 is a plane. The embodiment is a two-layer microchannel plate electron multiplier, which comprises an insulating gasket 303, a metal electrode thin sheet ring 302, a microchannel plate 301, a metal electrode thin sheet ring 302, an insulating gasket 303, a metal electrode thin sheet ring 302, a microchannel plate 301, a metal electrode thin sheet ring 302 and an insulating gasket 303 which are stacked in sequence, wherein the number of stacked layers of the microchannel plate assembly can be one or more, and one or more insulating gaskets 303 are arranged between the microchannel plate assembly and a cathode window 1 and between the microchannel plate assembly and a bottom surface 401. As shown in fig. 2, the microchannel plate electron multiplier 3 is fixed in the insulating case 4 by a card slot 403; the thickness of the insulating gasket 303 is 0.2mm-2 mm; the thickness of the metal electrode thin sheet ring 302 is 0.02mm-1 mm; the distance between the upper-layer microchannel plate 301 and the cathode window 1 is 0.1mm-5 mm; the distance between the lower microchannel plate 301 and the charge collecting anode 5 is 0.5mm to 10 mm.
One end of the electrode lead 6 is connected with the metal electrode thin sheet ring 302, and the other end penetrates through the bottom surface 401, extends out of the vacuum chamber and is connected with an external power supply; the electrode lead 6 is sealed and connected with the electrode lead hole 601 on the bottom surface 401 in a vacuum sealing way; the charge collecting anode 5 is a charge dividing type anode collector and is attached to the bottom surface 401 in a film coating mode; the anode pin 502 on the charge collecting anode 5 is soldered and sealed with the anode pin hole 501, and a signal is led out. Wherein the charge collecting anode 5 can be a single anode or a position sensitive anode; the position sensitive anode can be any one of a charge division anode, a delay line anode, a wedge-bar anode or a cross-bar anode.
The integrated narrow-frame photoelectric detector is in a cuboid shape (can also be a cylinder, a cube or other shapes); the cathode window 1 is made of quartz glass (quartz glass is not limited, and borosilicate glass, purple glass, magnesium fluoride, sapphire or other materials can be used); the photocathode 2 is attached to the inner surface of the cathode window 1 in an evaporation mode; the photocathode 2 is a thin film material with the thickness of 10nm-1 mu m; CsKNaSb polybase cathode or CsK responsive to visible light2Sb double-alkali cathode or Cs responding to ultraviolet light2Te，CsI，Rb2Te，K2TeCs cathode or gold cathode or AgOCs responsive to infrared light,GaAs (Cs), InGaAs (Cs) cathodes.
The insulating tube 4 is Al2O3The ceramic material with the content of not less than 95 percent can also be glass or other materials; the charge collecting anode 5 is made of metal material; the insulating spacer 303 is a ceramic or mica material.
For a tube shell with an outer frame of 51mm × 51mm, the wall thickness of the tube shell can be currently 1.5 mm. The transverse width occupied by the electrode lead 6 and the electron multiplier 3 of the microchannel plate can be 2.5mm, namely the effective detection size is 47mm multiplied by 47mm, and the effective detection area is more than 92 percent.
The manufacturing method of the integrated narrow-frame photoelectric detector comprises the following steps:
one end of an anode pin 501 is soldered and sealed with the charge collecting anode 5, the other end of the anode pin passes through an anode pin hole 502 on the insulating tube shell 4, the anode pin 502 is soldered and sealed with the anode pin hole 501, and the other end of the anode pin 502 extends out of the insulating tube shell 4;
the welding leakage rate of brazing is less than and less than 1E-11 Pa.m3/s。
welding a charge collecting anode 5 on the bottom surface 401 of the insulating tube shell 4;
or, a high-resistance film is plated on the bottom surface 401 of the insulating tube 4, and the surface resistance of the plated film is 250kohm/m2—10Mohm/m2；
After the insulating tube shell 4 and the charge collecting anode 5 are manufactured, a tightness test is carried out; the sealing performance test is qualified and then the next step is carried out;
the microchannel plate electron multiplier 3 can stack one or more sets of microchannel plate assemblies, and the microchannel plate assemblies comprise metal electrode thin sheet rings 302, microchannel plates 301 and metal electrode thin sheet rings 302 which are sequentially stacked;
insulating gaskets 303 are arranged between each group of micro-channel plate assemblies; one or more insulating gaskets 303 are arranged between the micro-channel plate assembly and the cathode window 1 and between the micro-channel plate assembly and the bottom surface 401;
step 6, putting the cathode window 1, the cathode material and the sealed insulating tube shell 4 into a cathode preparation chamber, carrying out vacuum high-temperature baking and exhausting on each part of the insulating tube shell 4 which is provided with the microchannel plate electron multiplier 3 and sealed with the indium seal groove 7, carrying out electronic scouring on the microchannel plate 301, adopting a current heating cathode source thermal evaporation mode to sequentially and alternately evaporate Cs, K, Na and Sb in the photocathode 2 on the inner surface of the cathode window 1, monitoring the change of photocurrent in the evaporation process until the sensitivity reaches an optimal value, and stopping evaporation;
and 7, transferring the cathode window 1 to an electron multiplier cavity, heating the indium to a molten state, placing the cathode window 1 at the upper end of the insulating tube shell 4, and cooling and solidifying to finish sealing.
The above disclosure is only for the specific embodiment of the present invention, but the embodiment of the present invention is not limited thereto, and any variations that can be made by those skilled in the art should fall within the scope of the present invention.
Claims (10)
1. An integrated narrow-frame photoelectric detector comprises a cathode window (1), a photocathode (2), a microchannel plate electron multiplier (3), an insulating tube shell (4), a charge collection anode (5), an electrode lead (6) and an indium seal groove (7);
the cathode window (1) is arranged at the upper end of the insulating tube shell (4) and forms a vacuum sealing chamber with the insulating tube shell (4); the photoelectric cathode (2) is arranged on the lower surface of the cathode window (1); the microchannel plate electron multiplier (3) is positioned in the vacuum sealed cavity and is fixedly connected with the insulating tube shell (4);
the method is characterized in that:
the charge collecting anode (5) is arranged on the bottom surface (401) of the insulating tube shell (4), and an anode pin (502) of the charge collecting anode extends out of the insulating tube shell (4) through an anode pin hole (501) arranged on the bottom surface (401);
one end of an electrode lead (6) is connected with the microchannel plate electron multiplier (3), and the other end of the electrode lead passes through the bottom surface (401), extends out of the vacuum chamber and is connected with an external power supply; the electrode lead (6) is sealed and connected with the electrode lead hole (601) on the bottom surface (401) in a vacuum sealing way;
the insulating tube shell (4) is a groove-shaped cuboid or cube or cylinder, and an integrated structure is formed by a bottom surface (401) and a side surface (402); a clamping groove (403) is formed in the side face (402), and the micro-channel plate electron multiplier (3) is connected with the insulating tube shell (4) in a clamping mode through the clamping groove (403);
the cross section of the micro-channel plate electron multiplier (3) is rectangular, square or circular, and the shape of the cross section is matched with that of the insulating tube shell (4);
the indium sealing groove (7) is arranged between the cathode window (1) and the upper end face of the insulating tube shell (4) and is sealed and connected with the insulating tube shell (4) in a vacuum sealing mode.
2. The integrated narrow-bezel photodetector of claim 1, wherein:
the upper end surface of the side surface (402) of the insulating tube shell (4) is in braze welding and sealing with the indium sealing groove (7);
the insulating tube shell (4) is made of ceramic or glass materials, and the wall thickness of the side face (402) of the insulating tube shell is 0.2mm-3 mm.
3. The integrated narrow-bezel photodetector of claim 2, wherein:
the microchannel plate electron multiplier (3) comprises one or more microchannel plate assemblies;
each layer of the microchannel plate assembly comprises a metal electrode thin sheet ring (302), a microchannel plate (301) and a metal electrode thin sheet ring (302) which are sequentially stacked; one or more insulating gaskets (303) are arranged between the micro-channel plate assembly and the cathode window (1) and between the micro-channel plate assembly and the bottom surface (401);
the electrode lead (6) is welded on the metal electrode thin sheet ring (302);
the inner surface of the cathode window (1) is a plane or a convex surface;
the thickness of the insulating gasket (303) is 0.2mm-2 mm;
the thickness of the metal electrode thin sheet ring (302) is 0.02mm-1 mm;
the distance between the upper-layer microchannel plate (301) and the cathode window (1) is 0.1mm-5 mm;
the distance between the lower microchannel plate (301) and the charge collecting anode (5) is 0.5mm-10 mm.
4. The integrated narrow-bezel photodetector of claim 3, wherein:
the electrode lead (6) is in braze welding and sealing with the electrode lead hole (601) on the bottom surface (401);
the photoelectric cathode (2) is attached to the inner surface of the cathode window (1) in an evaporation mode; the thickness of the photocathode (2) is 10nm-1 mu m; the photocathode (2) is a CsKNaSb multi-alkali cathode responding to visible light, or CsK2Sb double-alkali cathode, or Cs responsive to ultraviolet light2Te，CsI，Rb2Te or K2A TeCs cathode, or a gold cathode, or an AgOCs, GaAs (Cs), or InGaAs (Cs) cathode responsive to infrared light;
the charge collection anode (5) is attached to the bottom surface (401) in a film coating mode; the anode pin (502) is soldered and sealed with the anode pin hole (501);
the cathode window (1) is made of borosilicate glass, purple glass, quartz glass or magnesium fluoride and sapphire materials;
the insulating gasket (303) is made of ceramic or mica material.
5. An integrated narrow-bezel photodetector as claimed in any one of claims 1 to 4, wherein:
the charge collection anode (5) is a single anode or a position sensitive anode; the position sensitive anode is a charge division type anode, a delay line anode, a wedge strip type anode or a cross strip anode; the thickness of the charge collection anode (5) is 0.1mm-5 mm;
the welding leakage rate of the brazing is less than or equal to 1E-11 Pa.m3/s。
6. A manufacturing method of an integrated narrow-frame photoelectric detector is characterized by comprising the following steps:
step 1, manufacturing an insulating tube shell (4) with an integrated structure, wherein an electrode lead hole (601) and an anode pin hole (501) are formed in the bottom surface (401) of the insulating tube shell (4); a clamping groove (403) is arranged on the side surface (402) of the insulating tube shell (4);
step 2, metalizing the electrode lead hole (601) and the anode pin hole (501), welding and sealing the electrode lead (6) and the electrode lead hole (601), and extending the other end of the electrode lead (6) out of the insulating tube shell (4);
the anode pin (502) is welded and sealed with the anode pin hole (501), and the other end of the anode pin (502) extends out of the insulating tube shell (4);
step 3, manufacturing a charge collection anode (5):
manufacturing a charge collection anode (5) on the bottom surface (401) of the insulating tube shell (4);
step 4, metalizing the upper end surface of the insulating tube shell (4) and welding the upper end surface with the indium seal groove (7);
step 5, the microchannel plate electron multiplier (3) is arranged in an insulating tube shell (4) and is connected to the side surface (402) of the insulating tube shell (4) through a clamping groove (403), and the metal electrode thin sheet ring (302) is fixedly connected with the electrode lead (6) in a welding manner;
step 6, placing the cathode window (1), the cathode material and the insulating tube shell (4) in a cathode preparation chamber, electronically scouring the microchannel plate (301), evaporating the photocathode (2) on the inner surface of the cathode window (1) by using the cathode material, monitoring the change of photocurrent in the evaporation process until the sensitivity reaches an optimal value, and stopping evaporation;
and 7, transferring the cathode window (1) to an electron multiplier cavity, heating indium to a molten state, placing the cathode window (1) at the upper end of the insulating tube shell (4), and cooling and solidifying to finish sealing.
7. The method according to claim 6, wherein the step of manufacturing the integrated narrow-bezel photodetector comprises:
in the step 5, one or more groups of microchannel plate assemblies can be stacked on the microchannel plate electron multiplier (3), wherein each microchannel plate assembly comprises a metal electrode thin sheet ring (302), a microchannel plate (301) and a metal electrode thin sheet ring (302) which are sequentially stacked; one or more insulating gaskets (303) are arranged between the micro-channel plate assembly and the cathode window (1) and between the micro-channel plate assembly and the bottom surface (401);
and step 7, before the microchannel plate (301) is subjected to electronic washing, carrying out vacuum high-temperature baking and exhausting on each part of the insulating tube package (4) which is provided with the microchannel plate electron multiplier (3) and sealed with the indium sealing groove (7).
8. The method according to claim 7, wherein the step of manufacturing the integrated narrow-bezel photodetector comprises:
in the step 3, the charge collecting anode (5) is a single anode or a position sensitive anode; the position sensitive anode is a charge division type anode, a delay line anode, a wedge strip type anode or a cross strip anode; the thickness of the charge collection anode (5) is 0.1mm-5 mm;
the method for manufacturing the charge collection anode (5) on the bottom surface (401) of the insulating tube shell (4) specifically comprises the following steps: welding a charge collecting anode (5) on the bottom surface (401) of the insulating tube shell (4);
or, a high-resistance film is plated on the bottom surface (401) of the insulating tube shell (4), and the surface resistance of the plated film is 250kohm/m2—10Mohm/m2；
In step 5, insulating spacers (303) are placed between each group of microchannel plate assemblies.
9. The method according to claim 8, wherein the step of manufacturing the integrated narrow-bezel photodetector comprises:
in the step 2, the electrode lead (6) and the electrode lead hole (601) are sealed by brazing; the anode pin (502) and the anode pin hole (501) are sealed by brazing;
in the step 3, the charge collecting anode (5) and the insulating tube shell (4) are sealed by brazing;
in step 4, the insulating tube shell (4) is Al2O3Ceramic or glass material with content not less than 95%; if the insulating tube shell (4) is made of ceramic, the insulating tube shell and the indium sealing groove (7) are sealed by brazing; if the insulating tube shell (4) is made of glass, laser welding is adopted between the insulating tube shell and the indium seal groove (7);
the welding leakage rate of the brazing is less than or equal to 1E-11 Pa.m3/s；
And the step of testing the sealing performance of the welding position is also included after the brazing.
10. The method for manufacturing an integrated narrow-bezel photodetector as claimed in any one of claims 6 to 9, wherein: in the step 1, the insulating tube shell (4) with the integrated structure is manufactured by adopting die forming, 3D printing or a mode that the side surface (402) and the bottom surface (401) are welded into an integrated structure.
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