CN111024226A - Detector for three-dimensional imaging and manufacturing method thereof - Google Patents
Detector for three-dimensional imaging and manufacturing method thereof Download PDFInfo
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- CN111024226A CN111024226A CN201911301044.7A CN201911301044A CN111024226A CN 111024226 A CN111024226 A CN 111024226A CN 201911301044 A CN201911301044 A CN 201911301044A CN 111024226 A CN111024226 A CN 111024226A
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
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- H01J40/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
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Abstract
The invention provides a detector for three-dimensional imaging and a manufacturing method thereof, and solves the problems that the existing potential-sensitive anode detector is easy to leak gas, so that the device cannot be used and the subsequent electronic processing difficulty is increased. The detector comprises a shell casing, a micro-channel plate assembly, a position-sensitive anode assembly and an input window with a photocathode, wherein the position-sensitive anode assembly comprises an upper anode receiving panel, a lower anode receiving panel and a lead electrode; the upper layer anode receiving panel and the lower layer anode receiving panel are arranged in parallel at intervals; the upper layer anode receiving panel comprises an upper layer insulating substrate and an upper layer metal electrode, and the upper layer insulating substrate area corresponding to the part between the micro-strip lines in the upper layer metal electrode collecting area is hollow; the lower anode receiving panel comprises a lower insulating substrate and a lower metal electrode, the microstrip line structure of the lower metal electrode and the microstrip line structure of the upper metal electrode are vertically crossed on a different layer plane, and the lead electrode comprises 2 upper lead electrodes and 2 lower lead electrodes.
Description
Technical Field
The invention belongs to the weak and extremely weak light detection technology, and particularly relates to a detector for three-dimensional imaging and a manufacturing method thereof, which have important application values in applications such as biological fluorescence, space astronomy, laser radar and the like.
Background
The photon counting imaging detector based on the readout of the microchannel plate and the position-sensitive anode has the advantages of high signal-to-noise ratio, good drift resistance, good time stability and the like, and simultaneously has good time and space resolution capability and high detection sensitivity. The photon counting imaging detector mainly adopts a pulse discrimination technology and a digital counting technology to identify and extract extremely weak signals, and is widely applied to the fields of astronomy, high-energy physics, biomedicine and the like.
The position-sensitive anode detector collects electron clouds output by the microchannel plate by adopting a position-sensitive anode, and decodes the position of an incident event according to electron signals collected by different electrodes of the anode. The position-sensitive Anode for collecting the electrons output by the microchannel plate mainly comprises a resistance Anode (Resistive Anode), a Multi-Anode microchannel array (MAMA/Multi-Anode microchannel array), a Wedge-shaped Anode (WSA/Wedge and Strip Anode), a Vernier Anode (Vernier), a Cross-stripe (Cross-Strip) and the like. Among them, the WSA position-sensitive anode has the advantages of simple manufacturing process, high spatial resolution and the most extensive application.
Although the WSA potential sensitive anode detector has the advantages of simple manufacture, good imaging performance and the like, the WSA anode belongs to a charge division type anode, and the cross coupling coefficient between electrodes is large (the capacitance between the electrodes reaches dozens or even hundreds of picofarads), so that the type of detector is causedThe performance is severely reduced at large size; meanwhile, the device does not have high counting rate performance, and the maximum counting rate can only reach 105Left and right. Therefore, the WSA charge split type anode detector cannot meet the requirements when the size is large or the photon flux is large and the requirements on spatial resolution and temporal resolution are high.
In chinese patent application No. cn201710438625.x, a position-sensitive anode detector and a manufacturing method thereof are introduced, wherein a receiving anode is collected by n × n independent anodes, and a signal of each discrete electrode block needs to be led out through an insulating substrate by a lead. With the increase of the detection area, the number of the divided anodes and the leads becomes huge, and the high-density potential-sensitive anodes and the high-density potential-sensitive leads are easy to leak gas during high-temperature baking to cause that the device cannot be used, so that the manufacturing difficulty is increased and the yield is reduced. Meanwhile, the space resolution is limited due to the serious charge sharing between the divided anodes. In addition, patent application No. 201910266130.2 uses a resistive film to collect the electron cloud output by the MCP, and a metal anode on the other side of the resistive film substrate for sensing readout. Because induction reading can lose a part of signals, and meanwhile, the area of each discrete electrode metal unit is small, the output signals are too small, and the subsequent electronic processing difficulty is increased.
Disclosure of Invention
The potential sensitive anode detector aims to solve the problems that the existing potential sensitive anode detector has huge quantity of segmented anodes and leads, and the device cannot be used due to easy air leakage; in addition, the technical problems that the signal loss part exists in the sensing reading of the resistance film, the output signal is too small and the subsequent electronic processing difficulty is increased are solved.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a detector for three-dimensional imaging comprises a shell, a micro-channel plate assembly, a position-sensitive anode assembly and an input window with a photocathode; the input window and the position-sensitive anode assembly are respectively arranged at openings at two sides of the shell of the tube shell to form a vacuum sealing cavity; the photocathode and the micro-channel plate assembly are positioned in the vacuum sealing cavity; it is characterized in that: the position-sensitive anode assembly comprises an upper anode receiving panel, a lower anode receiving panel and a lead electrode; the upper layer anode receiving panel and the lower layer anode receiving panel are arranged in parallel at intervals, and the interval is less than or equal to 0.5 mm; the upper anode receiving panel comprises an upper insulating substrate, an upper metal electrode arranged on the upper surface of the upper insulating substrate and an upper ground electrode arranged on the lower surface of the upper insulating substrate; the upper layer metal electrode is an electrode with a microstrip line structure, and the microstrip lines are arranged in a snake shape; 2 upper lead electrode holes for leading electrodes to pass through are formed in the upper-layer insulating substrate, and the upper-layer insulating substrate area corresponding to the part between the micro-strips in the upper-layer metal electrode collecting area is hollow;
the lower anode receiving panel comprises a lower insulating substrate, a lower metal electrode arranged on the upper surface of the lower insulating substrate and a lower ground electrode arranged on the lower surface of the lower insulating substrate; the lower layer metal electrode is an electrode with a microstrip line structure, the microstrip lines are arranged in a snake shape, and the microstrip line structure of the lower layer metal electrode and the microstrip line structure of the upper layer metal electrode are vertically crossed on a different layer plane; 4 lower lead electrode holes for leading electrodes to pass through are formed in the lower insulating substrate;
the width of the lower metal electrode of the lower anode receiving panel is larger than that of the upper metal electrode of the upper anode receiving panel, so that the number of electrons collected by the upper and lower electrodes is equal;
the lead electrodes comprise 2 upper lead electrodes and 2 lower lead electrodes; the 2 upper lead electrodes respectively penetrate through the 2 lower lead electrode holes and the 2 upper lead electrode holes and then are connected with the two output ends of the upper layer metal electrode; and 2 lower lead electrodes respectively penetrate through the rest 2 lower lead electrode holes and then are connected with two output ends of the lower metal electrode.
Furthermore, the thickness of the upper layer of insulating substrate is 0.1-0.2 mm, and the thickness of the lower layer of insulating substrate is 1-2 mm;
the interval is 0.1-0.3 mm.
Furthermore, the upper layer anode receiving panel and the lower layer anode receiving panel are connected in a positioning way through the anode positioning sealing ring assembly;
the upper surface of the lower insulating layer is provided with a first annular gap;
the anode positioning sealing ring assembly comprises an anode positioning sealing ring and an upper receiving anode pressure ring; the lower part of the anode positioning sealing ring is positioned in the first annular gap, the upper part of the inner wall of the anode positioning sealing ring is provided with a second annular gap along the circumferential direction, and the upper layer of insulating substrate is arranged in the second annular gap;
the upper layer receives the anode clamping ring and is arranged on the upper end face of the anode positioning sealing ring, and the upper layer insulating substrate is limited and fixed.
Further, the tube shell comprises an indium seal ring, a first ceramic ring, an MCP input electrode ring, a second ceramic ring, an MCP output electrode ring, a third ceramic ring and an anode seal ring which are coaxially and sequentially stacked;
an indium seal groove is formed in the indium seal ring, and the input window is fixed in the indium seal groove;
the microchannel plate assembly is arranged on the MCP output electrode ring, and an MCP pressure ring is arranged between the input surface of the microchannel plate assembly and the MCP input electrode ring;
the anode sealing ring and the anode positioning sealing ring are welded and fixed.
Furthermore, the material of the input window is an optical fiber panel or quartz or magnesium fluoride or K9 glass;
the photocathode is an S20 cathode or an S25 cathode or a CsTe cathode.
Furthermore, the distance between the cathode surface of the photocathode and the input surface of the microchannel plate assembly is 0.1-0.2 mm.
Further, the microchannel plate assembly includes two MCPs in a "V" type cascade or three MCPs in a "Z" type cascade.
Further, a getter is arranged inside the detector for three-dimensional imaging.
Further, the upper layer insulating substrate and the lower layer insulating substrate both adopt 95% of Al2O3A ceramic.
Based on the detector, the invention provides a method for manufacturing the detector for three-dimensional imaging, which is characterized by comprising the following steps of:
step one, machining parts
Processing a required input window, an indium seal ring, a first ceramic ring, an MCP input electrode ring, a second ceramic ring, an MCP output electrode ring, a third ceramic ring and an anode seal ring according to the effective detection area to form a shell of the tube shell;
step two, sealing the shell and the shell
Sequentially sealing the indium seal ring, the first ceramic ring, the MCP input electrode ring, the second ceramic ring, the MCP output electrode ring, the third ceramic ring and the anode seal ring;
step three, preparing a position-sensitive anode assembly
3.1) preparing an upper layer insulating substrate and a lower layer insulating substrate, and arranging corresponding lead electrode holes on the upper layer insulating substrate and the lower layer insulating substrate;
3.2) evaporating metal conductive films on the upper surface and the lower surface of the upper-layer insulating substrate respectively, and forming an upper-layer metal electrode pattern on the upper surface of the upper-layer insulating substrate through etching;
removing the upper insulating substrate area corresponding to the part between the microstrip lines in the upper metal electrode collecting area to finish the preparation of the upper anode receiving panel;
3.3) sealing the lower layer insulating substrate with the anode positioning sealing ring, and simultaneously sealing the lead electrode with the lower layer insulating substrate;
the upper end surfaces of the 2 upper lead electrodes extend out of the upper surface of the lower insulating substrate, and the upper end surfaces of the 2 lower lead electrodes are coplanar with the upper surface of the lower insulating substrate;
3.4) respectively evaporating metal conductive films on the upper surface and the lower surface of the lower insulating substrate, forming a lower metal electrode pattern on the upper surface of the lower insulating substrate by etching, ensuring that 2 lower lead electrodes are connected with two output ends of the lower metal electrode, and completing the preparation of a lower anode receiving panel;
3.5) assembling the upper layer anode receiving panel and the anode sealing and positioning ring;
the distance between the upper layer anode receiving panel and the lower layer anode receiving panel is ensured by the anode sealing positioning ring; meanwhile, the microstrip line structure of the lower metal electrode and the microstrip line structure of the upper metal electrode are ensured to be vertically crossed on a different layer plane through the lead electrode, and then the upper receiving anode compression ring is connected with the anode positioning sealing ring, so that the upper anode receiving panel is fixed;
3.6) the upper ends of the 2 upper lead electrodes are respectively connected with the two output ends of the upper layer metal electrode, thus finishing the manufacture of the potential-sensitive anode assembly;
step four, shell casing indium
Placing the shell of the tube in a vacuum furnace, premelting a proper amount of indium material in an indium seal groove of the shell of the tube, taking out the indium material, and scraping off a part of surface indium for later use;
step five, evaporating and plating the input window
Evaporating a metal film layer in the peripheral sealing area on the input window;
sixthly, assembling the detector assembly
Assembling and welding the shell of the tube shell and the position-sensitive anode assembly, and performing leak detection after the assembly is finished; then sequentially assembling the micro-channel plate assembly and the MCP compression ring on the shell and shell casing to complete the assembly of the detector assembly;
step seven, preparing the photocathode
Filling the alkali source for preparing the input window and the cathode processed in the step five into a cathode preparation chamber in an ultrahigh vacuum transfer system, filling a detector assembly into an indium sealing chamber, then carrying out vacuum high-temperature baking and exhausting on the whole part of the detector, and carrying out electronic scouring on the MCP after baking is finished to remove residual gas in the MCP;
finally, monitoring the change condition of the photocurrent of the photocathode, and adjusting the evaporation capacity of the alkali source according to the change condition to obtain the photocathode;
step eight, the indium seal of the detector
And after the photoelectric cathode is manufactured, transferring the input window with the photocathode from the cathode preparation chamber of the vacuum transfer system to an indium sealing chamber, and sealing the input window with the photocathode and an indium sealing groove of the detector assembly by adopting a hot indium sealing method to finish the manufacture of the detector.
Compared with the prior art, the invention has the advantages that:
1. the detector adopts an upper-layer and lower-layer structure, and the middle part of the upper-layer anode receiving panel is hollowed out, so that the upper-layer and lower-layer metal receiving electrodes can simultaneously collect electron clouds output by the MCP; meanwhile, the crosstalk between the two receiving electrodes is eliminated or reduced as much as possible;
2. the detector adopts a position-sensitive anode for reading, the anode adopts an impedance matching design, the signal output pulse is narrow, the oscillation is small, and the time resolution capability and the space resolution capability are high. The two layers of collecting anodes can directly collect the electron cloud output by the MCP, and compared with induction reading, the strength of anode output signals is greatly improved.
3. The detector is high vacuum inside, the position-sensitive anode assembly consists of an upper part and a lower part, and has the advantages of good space resolution and time resolution performance, and two-dimensional position information and arrival time information of incident photons can be determined simultaneously. The method has important application value in the aspects of photon counting laser radar, biological fluorescence imaging, space astronomical observation and the like.
4. The detector only needs 4 electrode leads, thereby greatly reducing the number of leads penetrating through the substrate and enabling the detector to have a large area; meanwhile, the process difficulty of manufacturing the detector is reduced, and the reliability of the detector is improved.
Drawings
FIG. 1 is a schematic diagram of a detector configuration for three-dimensional imaging according to the present invention;
FIG. 2a is a top view of the upper anode receiving panel in the detector for three-dimensional imaging according to the present invention;
FIG. 2b is a cross-sectional view of the upper anode receiving panel (equipped with lead electrodes) in the detector for three-dimensional imaging of the present invention;
FIG. 3 is a top view of the lower anode receiving panel of the detector for three-dimensional imaging according to the present invention;
wherein the reference numbers are as follows:
01-a shell case, 02-an upper anode receiving panel, 03-a lower anode receiving panel, 1-an input window, 2-an indium sealing groove, 3-an indium sealing ring, 4-a first ceramic ring, 5-an MCP input electrode ring, 6-a second ceramic ring, 7-an MCP output electrode ring, 8-a third ceramic ring, 9-an anode sealing ring, 10-an anode positioning sealing ring, 11-a lower insulating substrate, 12-an upper lead electrode, 13-a lower metal electrode, 14-a lower ground electrode, 15-a lower lead electrode, 16-an upper metal electrode, 17-an upper insulating substrate, 18-an upper ground electrode, 19-an upper receiving anode clamping ring, 20-a getter, 21-a microchannel plate assembly, 22-an MCP clamping ring and 23-hollow, 24-photocathode.
Detailed Description
The invention is described in further detail below with reference to the figures and specific embodiments.
As shown in fig. 1 to 3, a detector for three-dimensional imaging includes an input window 1, a microchannel plate assembly 21(MCP), an MCP pressure ring 22, a potential sensitive anode assembly, a package case 01, and a getter 20.
The tube shell 01 consists of an indium seal ring 3, a first ceramic ring 4, an MCP input electrode ring 5, a second ceramic ring 6, an MCP output electrode ring 7, a third ceramic ring 8 and an anode seal ring 9;
the potential sensitive anode assembly consists of an upper anode receiving panel 02, a lower anode receiving panel 03, an anode positioning sealing ring 10 and an upper receiving anode compression ring 19; the upper-layer anode receiving panel 02 and the lower-layer anode receiving panel 03 are arranged in parallel at an interval of 0.1-0.3 mm;
as shown in fig. 2a and 2b, the upper anode receiving panel 02 includes an upper insulating substrate 17, an upper metal electrode 16 disposed on an upper surface of the upper insulating substrate 17, and an upper ground electrode 18 disposed on a lower surface of the upper insulating substrate 17; the width, the electrode thickness and the insulating substrate thickness of the metal electrode need to meet microstrip line impedance matching conditions, and the impedance is 50 omega; the upper surface of the upper layer insulating substrate 17 is etched with an electrode with a microstrip line structure, namely an upper layer metal electrode 16 is formed, the microstrip line is arranged in a snake shape and has certain electrode width and electrode thickness, wherein the middle spacing part of the electrode line in the collecting area of the upper layer metal electrode 16 is removed in a laser processing mode to form a hollow 23 structure; the upper layer insulating substrate 17 is provided with 2 upper lead electrode holes for lead electrodes to pass through;
the lower anode receiving panel 03 comprises a lower insulating substrate 11, a lower metal electrode 13 arranged on the upper surface of the lower insulating substrate 11, and a lower ground electrode 14 arranged on the lower surface of the lower insulating substrate 11; the lower metal electrode 13 is an electrode of a lower microstrip line structure, the microstrip lines are arranged in a snake shape, the electrode of the lower microstrip line structure and the electrode of the upper microstrip line structure are vertically crossed on a different layer plane, and 4 lower lead electrode holes for leading electrodes to pass through are arranged on the lower insulating substrate 11; electrons passing through the hollow 23 part of the upper insulating substrate 17 can be received by the lower anode receiving panel 03, and the width of the electrode of the lower receiving panel is slightly wider than that of the upper receiving panel, so that the uniformity of the two layers of received electrons can be ensured.
The upper anode receiving panel 02 and the lower anode receiving panel 03 are connected in a positioning way, specifically, a first annular gap is formed in the upper surface of the lower insulating substrate; the anode positioning sealing ring assembly comprises an anode positioning sealing ring 10 and an upper receiving anode pressure ring 19; a second annular gap is formed in the upper portion of the inner wall of the anode positioning sealing ring 10 along the circumferential direction, and the upper-layer insulating substrate 17 is arranged in the second annular gap; the upper layer receiving anode pressure ring 19 is arranged on the upper end face of the anode positioning sealing ring 10 and used for limiting and fixing the upper layer insulating substrate 17.
The lead electrodes comprise 2 upper lead electrodes 12 and 2 lower lead electrodes 15; 2 upper lead electrodes 12 are connected with two output ends of an upper metal electrode 16 after respectively penetrating through 2 lower lead electrode holes and 2 upper lead electrode holes, and 2 lower lead electrodes 15 are connected with two output ends of a lower metal electrode 13 after respectively penetrating through the rest 2 lower lead electrode holes, so that MCP electronic signals received by the position-sensitive anode assembly are led out through the lead electrodes.
The thickness of the upper insulating substrate 17 is 0.1-0.2 mm, and the thickness of the lower insulating substrate 11 is 1-2 mm. The anode can bear high-temperature baking at 400 ℃, and is well compatible with the manufacturing process of vacuum photoelectric devices.
The input window 1 is specifically selected according to a detection waveband and can be an optical fiber panel, quartz, magnesium fluoride, K9 glass and the like; the input window 1 is provided with a photocathode 24, and different types of photocathodes are selected according to different detection wave bands. Specifically, the detection waveband is visible light, an S20 or S25 cathode can be selected, near ultraviolet light can be detected, a CsTe cathode can be selected, and the like.
The distance between the cathode surface of the input window 1 and the upper surface of the micro-channel plate component 21 is 0.1-0.2 mm.
The microchannel plate assembly 21 is a V-type cascade of two MCPs or a Z-type cascade of three MCPs.
The position-sensitive anode assembly (receiving anode) of the detector of the embodiment adopts a crossed serpentine structure, the anode is compact in form and structure, and the transmission time of electrons in a delay line is generally in ns magnitude, so that the detector has the capability of high counting rate and high time resolution performance.
The receiving area of the anode is 25mm multiplied by 25mm, the period width of the anode is about 0.4-1 mm, and the anode substrate adopts 95% Al2O3For example, the detector is made by the following steps:
firstly, processing required parts according to an effective detection area, and mainly comprising an input window 1, an indium seal assembly, a first ceramic ring 4, an MCP input electrode ring 5, a second ceramic ring 6, an MCP output electrode ring 7, a third ceramic ring 8 and an anode seal ring 9;
step two, manufacturing a packaging mould: the indium seal assembly, the first ceramic ring 4, the MCP input electrode ring 5, the second ceramic ring 6, the MCP output electrode ring 7, the third ceramic ring 8 and the anode seal ring 9 are coaxially and sequentially sealed and connected to form a shell 01 of the tube shell, and the shell is used after leak detection is finished;
step three, manufacturing a position-sensitive anode assembly,
3.1, preparing substrate materials of an upper anode receiving panel 02 and a lower anode receiving panel 03 according to the design, wherein the thickness of the upper insulating base 17 is 0.2mm, and the thickness of the lower insulating base 11 is 1.8 mm. 2 upper lead electrode holes for leading electrodes to penetrate are processed at the positions of leading electrodes of an upper-layer insulating substrate 17 according to design and assembly requirements, and 4 lower lead electrode holes are processed at corresponding design positions on a lower-layer insulating substrate 11. And calculating the electrode line width and the electrode thickness of the snakelike microstrip line of the upper anode receiving panel 02 and the lower anode receiving panel 03 according to the transmission impedance matching requirement of the signal in the microstrip line.
And 3.2, respectively evaporating metal conducting films made of Au or Cu or Ni or Al on two surfaces of the upper-layer insulating substrate 17, etching to obtain a required receiving electrode pattern, and forming electrodes of a microstrip line structure on the upper surface of the upper-layer insulating substrate 17, wherein the microstrip lines are distributed in a snake shape.
By adopting the laser processing technology, the ceramic substrate which needs the hollow 23 part in the area of 0225mm multiplied by 25mm of the upper anode receiving panel is removed, so that the section of the middle part of the upper anode receiving panel 02 is a comb-shaped pattern, and thus, electrons emitted from the MCP can be collected by the electrode of the upper receiving panel, and meanwhile, a part of the electrons passes through the hollow 23 part between the electrodes of the upper anode receiving panel 02 to reach the lower anode receiving panel 03.
3.3, sealing the lower insulating substrate 11 with the anode positioning sealing ring 10 and 4 solid lead electrodes, and detecting leakage. Specifically, 4 electrode leads are sealed with the lower receiving panel by a brazing method, and the lower insulating substrate 11 is sealed with the anode positioning sealing ring 10. 4 solid lead electrodes respectively penetrate through 4 lead electrode holes, the lower end faces of the 4 solid lead electrodes extend out of the lower surface of the lower insulating substrate 11, and the upper end faces of 2 lead electrodes are ensured to be coplanar with the upper surface of the lower insulating substrate 11; the upper end surfaces of the other 2 lead electrodes are coplanar with the upper surface of the upper-layer insulating substrate 17; or the lead electrode can be slightly higher than the receiving surface, but a corresponding small hole is processed at the corresponding position of the upper receiving panel, so that the lower lead electrode is prevented from being contacted with the upper receiving panel.
And 3.4, respectively evaporating metal conductive films on two surfaces of the lower-layer insulating substrate 11, wherein the materials are Au or Cu or Ni or Al, are consistent with the materials of the upper-layer insulating substrate 17, and etching electrodes with a microstrip line structure on the lower-layer insulating substrate 11 by an etching process to obtain a required receiving electrode pattern. Meanwhile, the reliable electric connection of the 2 lead electrodes and the two ends of the electrodes is ensured;
and 3.5, installing the upper anode receiving panel 02 on the inner surface of the upper end of the anode positioning sealing ring, and finishing the positioning and packaging of the upper anode receiving panel 02 and the anode positioning sealing ring.
The distance between the upper anode receiving panel 02 and the lower anode receiving panel 03 is ensured by the anode sealing and positioning ring 10. Meanwhile, the upper metal electrode 16 of the upper anode receiving panel 02 and the lower metal electrode 13 of the lower anode receiving panel 03 are ensured to be vertically crossed on the different layer plane, and then the upper receiving anode press ring 19 is connected with the anode positioning sealing ring 10, so that the upper anode receiving panel 02 is fixed.
And 3.6, connecting the two output ends of the upper layer metal electrode 16 with the two corresponding lead electrodes through metal wires, wherein the specific connection mode adopts a bonding process to ensure that the lead connection can resist high-temperature baking at 400 ℃. Thus, the fabrication of the position-sensitive anode assembly is completed.
Step four, the shell of the tube 01
And (3) placing the sealed tube shell 01 in a vacuum furnace, premelting a proper amount of indium material in the indium sealing groove 2 of the tube shell 01, taking out, and scraping off a part of surface indium for later use.
And fifthly, evaporating a metal film layer at the sealing position around the input window 1 to ensure good sealing between the input window 1 and the shell, specifically evaporating and plating a plurality of metal films on the cathode window indium cover.
Sixthly, the getter 20 is assembled in the metal ceramic tube shell 01 of the detector, the position-sensitive anode assembly is connected with the anode positioning sealing ring, a welding process is specifically adopted, and the anode sealing ring 9 and the anode positioning sealing ring 10 are welded and fixed. And after the assembly is finished, leak detection is carried out. And then sequentially assembling the lower-layer MCP, the middle-layer MCP, the upper-layer MCP, the MCP compression ring 22 and the position-sensitive anode assembly in the detector tube body. Because the MCP has a chamfered angle, the Z-shaped cascade of small holes in the MCP is ensured in assembly, and the input and output surfaces of each MCP are correctly placed. If two MCPs are adopted, the two MCPs are guaranteed to be V-type cascade connection. Meanwhile, the MCP pressure ring 22 is pressed on the input face of the upper MCP.
And step seven, an input window 1 and an alkali source for manufacturing a cathode are arranged in a cathode preparation chamber in the ultrahigh vacuum transfer system, a detector assembly (an indium seal ring, a first ceramic ring, an MCP input electrode ring, a second ceramic ring, an MCP output electrode ring, a third ceramic ring, an anode seal ring and an anode assembly) is arranged in the indium seal chamber, then the whole components of the detector are baked at high temperature in vacuum for exhausting, the MCP is electronically washed after baking is finished, and residual gas in the MCP is removed. And then manufacturing a photocathode, monitoring the change condition of the photocurrent of the photocathode, and adjusting the evaporation capacity of the alkali source according to the change condition to enable the sensitivity of the photocathode to reach an optimal value, thereby obtaining the photocathode 24.
And step eight, after the photoelectric cathode is manufactured, transferring the input window 1 with the photoelectric cathode 24 from a cathode preparation chamber of a vacuum transfer system to an indium sealing chamber, and sealing the input window 1 with the photoelectric cathode 24 and the indium sealing groove 2 of the detector assembly by adopting a hot indium sealing method to finish the manufacture of the detector.
The above description is only for the purpose of describing the preferred embodiments of the present invention and does not limit the technical solutions of the present invention, and any known modifications made by those skilled in the art based on the main technical concepts of the present invention fall within the technical scope of the present invention.
Claims (10)
1. A detector for three-dimensional imaging comprises a shell-and-tube shell (01), a micro-channel plate assembly (21), a position-sensitive anode assembly and an input window (1) with a photocathode (24); the input window (1) and the position-sensitive anode assembly are respectively arranged at openings on two sides of the shell (01) of the tube shell to form a vacuum sealing cavity; the photocathode (24) and the micro-channel plate assembly (21) are positioned in the vacuum sealed cavity; the method is characterized in that:
the position-sensitive anode assembly comprises an upper anode receiving panel (02), a lower anode receiving panel (03) and a lead electrode;
the upper layer anode receiving panel (02) and the lower layer anode receiving panel (03) are arranged in parallel at intervals, and the interval is less than or equal to 0.5 mm;
the upper anode receiving panel (02) comprises an upper insulating substrate (17), an upper metal electrode (16) arranged on the upper surface of the upper insulating substrate (17), and an upper ground electrode (18) arranged on the lower surface of the upper insulating substrate (17);
the upper layer metal electrode (16) is an electrode with a microstrip line structure, and the microstrip lines are distributed in a snake shape;
2 upper lead electrode holes for leading electrodes to pass through are formed in the upper-layer insulating substrate (17), and the area of the upper-layer insulating substrate (17) corresponding to the part between the micro-strip lines in the collection area of the upper-layer metal electrode (16) is hollow (23);
the lower anode receiving panel (03) comprises a lower insulating substrate (11), a lower metal electrode (13) arranged on the upper surface of the lower insulating substrate (11), and a lower ground electrode (14) arranged on the lower surface of the lower insulating substrate (11);
the lower layer metal electrode (13) is an electrode with a microstrip line structure, microstrip lines are distributed in a snake shape, and the microstrip line structure of the lower layer metal electrode (13) and the microstrip line structure of the upper layer metal electrode (16) are vertically crossed on a different layer plane;
the lower layer insulating substrate (11) is provided with 4 lower lead electrode holes for lead electrodes to pass through;
the width of a lower metal electrode (13) of the lower anode receiving panel (03) is larger than that of an upper metal electrode (16) of the upper anode receiving panel (02);
the lead electrodes comprise 2 upper lead electrodes (12) and 2 lower lead electrodes (15);
2 upper lead electrodes (12) respectively penetrate through the 2 lower lead electrode holes and the 2 upper lead electrode holes and are connected with two output ends of the upper layer metal electrode (16);
and 2 lower lead electrodes (15) respectively penetrate through the rest 2 lower lead electrode holes and are connected with two output ends of the lower metal electrode (13).
2. The detector for three-dimensional imaging according to claim 1, characterized in that: the thickness of the upper layer insulating substrate (17) is 0.1-0.2 mm, and the thickness of the lower layer insulating substrate (11) is 1-2 mm;
the interval is 0.1-0.3 mm.
3. The detector for three-dimensional imaging according to claim 2, characterized in that: the upper layer anode receiving panel (02) and the lower layer anode receiving panel (03) are connected in a positioning way through an anode positioning sealing ring assembly;
the upper surface of the lower insulating substrate (11) is provided with a first annular gap;
the anode positioning sealing ring assembly comprises an anode positioning sealing ring (10) and an upper receiving anode pressure ring (19), the lower part of the anode positioning sealing ring (10) is positioned in the first annular notch, a second annular notch is formed in the upper part of the inner wall of the anode positioning sealing ring (10) along the circumferential direction, and an upper insulating substrate (17) is arranged in the second annular notch;
the upper layer receives the anode compression ring (19) and is arranged on the upper end face of the anode positioning sealing ring (10) to limit and fix the upper layer insulating substrate (17).
4. The detector for three-dimensional imaging according to claim 1, characterized in that: the tube shell (01) comprises an indium seal ring (3), a first ceramic ring (4), an MCP input electrode ring (5), a second ceramic ring (6), an MCP output electrode ring (7), a third ceramic ring (8) and an anode seal ring (9) which are coaxially and sequentially stacked;
an indium seal groove (2) is formed in the indium seal ring (3), and the input window (1) is fixed in the indium seal groove (2);
the microchannel plate assembly (21) is arranged on the MCP output electrode ring (7), and an MCP pressure ring (22) is arranged between the input surface of the microchannel plate assembly (21) and the MCP input electrode ring (5);
the anode sealing ring (9) and the anode positioning sealing ring (10) are welded and fixed.
5. The detector for three-dimensional imaging according to any one of claims 1 to 4, wherein: the material of the input window (1) is an optical fiber panel or quartz or magnesium fluoride or K9 glass;
the photocathode (24) is an S20 cathode or an S25 cathode or a CsTe cathode.
6. The detector for three-dimensional imaging according to claim 5, characterized in that: the distance between the cathode surface of the photocathode (24) and the input surface of the microchannel plate assembly (21) is 0.1-0.2 mm.
7. The detector for three-dimensional imaging according to claim 6, characterized in that: the microchannel plate assembly (21) includes two MCPs in a "V" type cascade or three MCPs in a "Z" type cascade.
8. The detector for three-dimensional imaging according to claim 4, characterized in that: and a getter (20) is arranged in the third ceramic ring (8).
9. The detector for three-dimensional imaging according to claim 1, characterized in that: the upper layer insulating substrate (17) and the lower layer insulating substrate (11) both adopt 95% Al2O3A ceramic.
10. A method of fabricating a detector for three-dimensional imaging, comprising the steps of:
step one, machining parts
Processing a required input window (1), an indium seal ring (3), a first ceramic ring (4), an MCP input electrode ring (5), a second ceramic ring (6), an MCP output electrode ring (7), a third ceramic ring (8) and an anode seal ring (9);
step two, sealing the shell (01) of the tube
Sequentially sealing an indium seal ring (3), a first ceramic ring (4), an MCP input electrode ring (5), a second ceramic ring (6), an MCP output electrode ring (7), a third ceramic ring (8) and an anode seal ring (9) to form a tube shell (01);
step three, preparing a position-sensitive anode assembly
3.1) preparing an upper-layer insulating substrate (17) and a lower-layer insulating substrate (11), and forming corresponding lead electrode holes on the upper-layer insulating substrate (17) and the lower-layer insulating substrate (11);
3.2) evaporating metal conductive films on the upper surface and the lower surface of the upper-layer insulating substrate (17) respectively, and forming an upper-layer metal electrode (16) pattern on the upper surface of the upper-layer insulating substrate (17) by etching;
removing the corresponding upper insulating substrate (17) region between the microstrip lines in the upper metal electrode (16) collecting region to complete the preparation of the upper anode receiving panel (02);
3.3) sealing the lower layer insulating substrate (11) with the anode positioning sealing ring (10), and simultaneously sealing the lead electrode with the lower layer insulating substrate (11);
the upper end surfaces of the 2 upper lead electrodes (12) extend out of the upper surface of the lower insulating substrate (11), and the upper end surfaces of the 2 lower lead electrodes (15) are coplanar with the upper surface of the lower insulating substrate (11);
3.4) respectively evaporating metal conductive films on the upper surface and the lower surface of the lower-layer insulating substrate (11), forming a lower-layer metal electrode (13) pattern on the upper surface of the lower-layer insulating substrate (11) through etching, ensuring that 2 lower lead electrodes (15) are connected with two output ends of the lower-layer metal electrode (13), and completing the preparation of the lower-layer anode receiving panel (03);
3.5) assembling the upper anode receiving panel (02) and the anode sealing-in positioning ring (10);
the distance between the upper layer anode receiving panel (02) and the lower layer anode receiving panel (03) is ensured by the anode sealing and positioning ring (10); meanwhile, the microstrip line structure of the lower metal electrode (13) and the microstrip line structure of the upper metal electrode (16) are ensured to be vertically crossed on a different layer plane through the lead electrode (12), and then the upper receiving anode compression ring (19) is connected with the anode positioning sealing ring (10), so that the upper anode receiving panel (02) is fixed;
3.6) the upper ends of the 2 upper lead electrodes (12) are respectively connected with two output ends of an upper layer metal electrode (16) to finish the manufacture of the position-sensitive anode assembly;
step four, indium is converted into the shell (01) of the tube shell
Placing the tube shell (01) in a vacuum furnace, premelting a proper amount of indium material in an indium seal groove (2) of the tube shell (01), taking out and scraping off a part of surface indium for later use;
step five, evaporation input window (1)
A metal film layer is evaporated in the peripheral sealing area on the input window (1);
sixthly, assembling the detector assembly
Assembling and welding the shell (01) of the tube shell and the position-sensitive anode assembly, and performing leak detection after the assembly is finished; then sequentially assembling a micro-channel plate assembly (21) and an MCP pressure ring (22) on the shell and shell (01) to complete the assembly of the detector assembly;
step seven, preparing the photocathode
Filling the input window (1) and the alkali source for cathode preparation processed in the fifth step into a cathode preparation chamber in an ultrahigh vacuum transfer system, filling a detector assembly into an indium sealing chamber, then carrying out vacuum high-temperature baking and exhausting on the whole part of the detector, and carrying out electronic scouring on the MCP after baking is finished to remove residual gas in the MCP;
monitoring the change condition of the photocurrent of the photocathode, and adjusting the evaporation capacity of the alkali source according to the change condition to obtain the photocathode (24);
step eight, the indium seal of the detector
And after the photoelectric cathode is manufactured, transferring the input window (1) with the photocathode (24) from a cathode preparation chamber of a vacuum transfer system to an indium sealing chamber, and sealing the input window (1) with the photocathode (24) and an indium sealing groove (2) of the detector assembly by adopting a hot indium sealing method to finish the manufacture of the detector.
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