CN103280393A - Cross position-sensitive anode and method for achieving photon counting integral imaging measurement with cross position-sensitive anode applied - Google Patents

Abstract

The invention provides a novel cross position-sensitive anode which is suitable for a micro-channel plate detector, and discloses a high-performance ultraviolet photon counting integral imaging detection system and a photon counting integral imaging measurement method, wherein the cross position-sensitive anode serves as a core detection component. The cross position-sensitive anode is divided into an upper layer and a lower layer, wherein each rectangular conductive strip on the upper layer is in overlap joint with each rectangular conductive strip on the lower layer, the rectangular conductive strips on the upper layer are parallel on the same plane, the rectangular conductive strips on the lower layer are parallel on the same plane, insulation layers correspond to the rectangular conductive strips on the upper layer in a one-to-one mode and are located in projection ranges of the corresponding rectangular conductive strips respectively, all the rectangular conductive strips on the upper layer and the lower layer integrally form a cross grid in the projection direction, and each rectangular conductive strip independently outputs an electric charge signal. The anode and the method can achieve the properties of high spatial resolution and high counting rate, solve the electrode conduction problems, reduce electrode crosstalk and accurately control the width of an insulation channel.

Description

Intersect position-sensitive anode and use the method that it realizes photon counting integration imaging measurement

Technical field

The invention belongs to multianode Detection Techniques field, be specifically related to a kind of position-sensitive anode that is applicable to microchannel plate sun detector, and use the method that this position-sensitive anode is realized photon counting integration imaging measurement.

Background technology

The ultraviolet detection mode mainly contains ultraviolet photometer (photometer), ultraviolet spectrometer (spectrometer), ultraviolet spectrograph (Spectrograph), ultraviolet imagery instrument (Imaging) etc. in the world, covers extreme ultraviolet, far ultraviolet, medium ultraviolet near ultraviolet band.Usually adopt wide bandgap semiconductor GaN, SiC, ZnO, diamond thin and AlGaN detector, ultraviolet CCD(UVCCD), ultraviolet enhancement CCD(UV-ICCD), the microchannel plate anode detector is (as the multianode detector array, MAMA, Multi-Anode Microchannel Array), wedge strip anode detector (WSA, Wedge and Strip Anode), delay line detector (Delay Line), intersection delay line detector (Cross Delay Line Detector), vernier anode detector (Vernier Anode), etc. electron bombard CCD(EBCCD)) multiple mode is carried out ultraviolet detection, but broad stopband GaN, SiC, ZnO, the present technology of ultraviolet detector such as diamond thin and AlGaN is immature; In addition, aspect the detection of ultraviolet space astronomy, the target that is studied usually than bright 4～8 orders of magnitude of ultraviolet band, when therefore using ultraviolet CCD to survey, needs to use narrow band pass filter at visible-range, has so just significantly reduced quantum efficiency.Microchannel plate sun detector utilization " day is blind " ultraviolet light photo negative electrode, quantum efficiency compares higher, work in photon counting mode, can realize the detection of the atomic weak ultraviolet target in the space of quiet mode, thus be at present in the world the space ultraviolet detection use at most, the most ripe, one of the most reliable detection mode.

The microchannel plate anode detector mainly consists of the following components: the ultraviolet light photo negative electrode (as CsI, Cs2Te, AlGaN etc.) that quantization efficiency is higher, microchannel plate, anode.Microchannel plate have the gain multiple big, noise is little, the spatial resolution height, premium properties such as counting rate height, anode generally adopts the charge division principle to survey.The microchannel plate anode detector mainly contains as WSA, Delay-line, cross-strip.

The design feature of WSA detector anode own, make that cross-coupling coefficient is bigger between W, S, three electrodes of Z, interelectrode capacitance reaches hundreds of pico farad (pF), therefore this detector spatial resolution and temporal resolution are limited, the spatial resolution of international report WSA detector can only reach 40 microns Limiting Level, and the maximum count rate can only reach about 100k.In addition, WSA detector effective area and resolution present certain contradictory relation, because the electrode periodic width of WSA anode detector is generally 1～1.5mm, when effective area requirements is bigger, periodicity is will changes persuing many so, area linear change rate between like this can only sacrificial electrode realizes, thereby causes detector size to become big, will reduce detector sensitivity.Therefore, requiring spatial resolution than higher and bigger imaging detection and the spectrographic detection field of photon flow, it is unable to do what one wishes that the WSA detector just seems, therefore the importance of the more high-resolution ultraviolet photon counting of development imaging detector is then self-evident.

The design feature of Delay Line detector own, be being connected with on the chip piece of a plurality of output electrodes, adopt higher dielectric coefficient and snakelike circuit to reduce the transmission speed of signal pulse, make the charge signal of all output electrodes produce delay, the real-time that signal is handled is relatively poor.

Summary of the invention

The present invention seeks to propose a kind of new intersection position-sensitive anode that is applicable to microchannel plate sun detector, and with this as the core exploring block, provide the method for a kind of high-performance ultraviolet counting integration imaging detection system and photon counting integration imaging measurement, can realize high spatial resolution, high count rate performance, solve electrode conduction, reduce the width difficult problem that electrode is crosstalked and accurately controlled insulated trenches.

Technical solution of the present invention is as follows:

A kind of intersection position-sensitive anode that is applicable to microchannel plate sun detector is divided into upper and lower two-layerly, and the upper and lower include measure-alike a plurality of rectangular conductive bars, and each rectangular conductive bar on upper strata is overlapped on each rectangular conductive bar of lower floor through insulating barrier; Each rectangular conductive bar on upper strata is parallel to each other in same plane, and each rectangular conductive bar of lower floor is parallel to each other in same plane; Described insulating barrier is corresponding one by one with each rectangular conductive bar on upper strata, and lay respectively in the drop shadow spread of corresponding rectangular conductive bar, on projecting direction, all rectangular conductive bars of upper strata and lower floor are whole to be formed and intersects grid, each rectangular conductive bar independence output charge signal.

Based on above-mentioned basic solution, the present invention also does following optimization and limits and improve:

All rectangular conductive bars of lower floor can be wholy set on the dielectric base; Also can discrete insulating barrier be set in the bottom surface of each rectangular conductive bar of lower floor, corresponding one by one with each rectangular conductive bar of lower floor.

Whole square crossing grid, the best results of forming of all rectangular conductive bars of upper strata and lower floor.

The preferred Cu-Ag alloy of the material of rectangular conductive bar, the material of insulating barrier are preferably quartzy.

If all rectangular conductive bars of lower floor are wholy set on the dielectric base, then the preferred aluminium oxide of the material of this dielectric base.

Preferable width with the straight line insulated trenches that forms between one deck adjacent rectangle bus is 0.1mm.

If the width of design straight line insulated trenches is 0.1mm, then the preferable width of all rectangular conductive bars is 0.4mm, and thickness is 2um; All insulating barriers adopt the rectangle insulation strip identical with rectangular conductive bar size.

With a kind of high-performance ultraviolet counting integration imaging detection system of above-mentioned intersection position-sensitive anode as the design of core exploring block, comprise detector and electronics read-out system, described detector comprises the vacuum envelope that sets gradually, the ultraviolet optics window, the ultraviolet light photo negative electrode, microchannel plate and above-mentioned intersection position-sensitive anode, described ultraviolet light photo negative electrode evaporation microchannel plate surface, microchannel plate adopts the cascade of V-type cascade system, described intersection position-sensitive anode is positioned at 2-5mm behind the microchannel plate exit facet, the output of detector is provided with corresponding interface and pin, and the charge signal that each rectangular conductive bar is independently exported inserts the electronics read-out system; Described electronics read-out system comprises charge-sensitive pre-amplification circuit, pulse bandwidth filtering shaping circuit, A/D change-over circuit and the Digital Image Processing circuit that connects successively.

Adopt above-mentioned intersection position-sensitive anode to realize the method for ultraviolet photon counting integration imaging measurement, may further comprise the steps:

(1) ultraviolet light incoming particle to be measured is beaten on the ultraviolet light photo negative electrode, produced electronics according to photoelectric effect;

(2) electronics of Chan Shenging enters V-type cascade microchannel plate after first accelerating field is accelerated, and makes electron multiplication, forms the electronics cloud cluster in the lower end of V-type cascade microchannel plate;

(3) the electronics cloud cluster is after second accelerating field is accelerated, and beats intersecting on the position-sensitive anode, and each rectangular conductive bar of intersection position-sensitive anode is exported the charge signal collected respectively to the electronics read-out system;

(4) all charge signals of exporting according to the electronics read-out system calculate the position of the electrode at maximum amount of charge place, carry out the coarse positioning of electric charge cloud cluster barycenter;

(5) draw the exact position coordinate of electronics cloud cluster barycenter with reference to the quantity of electric charge of adjacent rectangle bus output by fitting algorithm, namely represent the position of incoming particle; By recorded electronic read-out system charge pulse output time, survey the time of advent of incoming particle, finally realize ultraviolet photon counting integration imaging measurement.

The exact position coordinate of above-mentioned electronics cloud cluster barycenter can adopt the algorithm of following optimization to draw:

If each rectangular conductive bar on upper strata is parallel along the x direction, i quantity of electric charge Q that electrode is collected on the x direction _{8, i}Be maximum, i is also as the position of this electrode on the x direction; Each rectangular conductive bar of lower floor is parallel along the y direction, j quantity of electric charge Q that electrode is collected on the y direction _{9, j}Be maximum, j is also as the position of this electrode on the y direction; Then the exact position coordinate of electronics cloud cluster barycenter is

$x_0=i{P}_x-P_x\frac{\ln \left(Q_{8,i-1}\right)-\ln \left(Q_{8,i+1}\right)}{2(\ln \left(Q_{8,i-1}\right)+\ln \left(Q_{8,i+1}\right)-2\ln \left(Q_{8,i}\right))}$

$y_0={\mathrm{jP}}_y-P_y\frac{\ln \left(Q_{9,j-1}\right)-\ln \left(Q_{9,j+1}\right)}{2(\ln \left(Q_{9,j-1}\right)+\ln \left(Q_{9,j+1}\right)-2\ln \left(Q_{9,j}\right))}$

P wherein _xBe the periodicity of x direction, P _yIt is the periodicity of y direction.

The present invention has the following advantages:

1. intersection position-sensitive anode of the present invention, with respect to the position-sensitive anode structure of original WSA detector, interelectrode electric capacity is reduced to several pico farads (pF), so counting rate can reach about 1M, improves 10 times with respect to the WSA detector.And spatial resolution can reach several microns even sub-micron (the WSA detector can only reach 140 microns), and this external detector can also be accomplished large scale.

2. with respect to original Delay-line detector, take the output in real time simultaneously of all charge signals, improved temporal resolution greatly.

3. do not have the restriction of positive plate face design area, evenly distribute by the measurement aspect because each strip electrodes is collected the electric charge area, so there is not the restriction of charge-trapping design area.

4, use the present invention, can the atomic weak ultraviolet in implementation space, the imaging detection of extreme ultraviolet waveband, can be widely used in fields such as military affairs, astronomy, high-energy physics, chemistry, quantum electronics, ultraweak bioluminescence detection.

Description of drawings

Fig. 1 is based on the principle schematic of the high-performance ultraviolet counting integration imaging detector of intersection position-sensitive anode design of the present invention.

Fig. 2 is the structure chart according to the high-performance ultraviolet counting integration imaging detector of principle design shown in Figure 1.

Fig. 3 is the structural representation of intersection position-sensitive anode of the present invention.

Fig. 4 is the electric charge collecting region schematic diagram of intersection position-sensitive anode.

Fig. 5 is electric charge collecting region lead-in wire schematic diagram.

Fig. 6 is the decoding algorithm flow chart of intersection position-sensitive anode.

The drawing reference numeral explanation:

1-ultraviolet light photo negative electrode, 2-V type cascade microchannel plate, 3-intersect position-sensitive anode, the last conductive layer of 4-, and 5-is arranged on the insulating barrier between conductive layer and the lower conductiving layer, 6-lower conductiving layer, 7-dielectric base; The rectangular conductive bar of 8-last (conduction) layer; The rectangular conductive bar of (conduction) layer under the 9-; The 10-detector, 11-ultraviolet optics window, 12-detector vacuum envelope, 13-ultraviolet light photo negative electrode, 14-V type cascade microchannel plate, 15-intersects position-sensitive anode, 16-electronics read-out system, 17-charge-sensitive pre-amplification circuit, 18-pulse bandwidth filtering shaping circuit, the 19-A/D change-over circuit, 20-Digital Image Processing circuit.

Embodiment

As shown in Figure 3, the structural representation of intersection position-sensitive anode of the present invention.This intersection position-sensitive anode utilizes the charge division principle to be designed to upper and lower two conductive layers and middle insulating barrier, last conductive layer and lower conductiving layer include measure-alike a plurality of rectangular conductive bars, insulating barrier is made up of the rectangle insulation strip identical with arrangement with the rectangular conductive bar size of last conductive layer, and each rectangular conductive bar of last conductive layer vertically is overlapped on each rectangular conductive bar of lower conductiving layer through insulating barrier; Each rectangular conductive bar of last conductive layer is parallel to each other in same plane, and each rectangular conductive bar of lower conductiving layer is parallel to each other in same plane; Described insulating barrier is corresponding one by one with each rectangular conductive bar of last conductive layer, and lays respectively in the drop shadow spread of corresponding rectangular conductive bar, on projecting direction, and the whole square crossing grid that forms of all rectangular conductive bars of last conductive layer and lower conductiving layer.Therefore when the electric charge cloud cluster covered on these two conductive layers, as shown in Figure 4, according to these two electric charges that each electrode of conductive layer is collected, the algorithm flow of employing Fig. 6 can calculate the position of electric charge cloud cluster barycenter.

Position-sensitive anode pattern of the present invention shown in Figure 4 has 16 rectangular conductive bars as output electrode, the link relation of each rectangular conductive bar such as Fig. 3, and the place, crosspoint is not communicated with, and the rear end of each electrode shown in Figure 5 is provided with lead-in wire, the output charge signal.

Based on this intersection position-sensitive anode, can design a kind of high-performance ultraviolet counting integration imaging detection system, comprise detector and electronics read-out system.The front end of detector is the ultraviolet optics window, is embedded in a vacuum envelope front end, and the ultraviolet light photo negative electrode is with the parallel placement of ultraviolet window and near the ultraviolet window.The detector rear end is provided with special purpose interface and pin, connect the charge-sensitive pre-amplification circuit, charge-sensitive pre-amplification circuit rear end connects pulse shaper, the pulse shaper rear end connects the A/D change-over circuit, and A/D change-over circuit signal output part is connected DSP+FPGA Digital Image Processing circuit and carries out the view data processing.

As shown in Figure 1.This detector operation process is as follows: ultraviolet light incoming particle to be measured is by the ultraviolet optics window, enter detector, ultraviolet light photo negative electrode in the detector produces electronics according to photoelectric effect, after the accelerating field between ultraviolet light photo negative electrode and the V-type cascade microchannel plate is accelerated electronics, enter V-type cascade microchannel plate, V-type cascade microchannel plate makes electron multiplication to 10 ⁵-10 ⁶Form the electronics cloud cluster, V-type cascade microchannel plate with intersect between the position-sensitive anode apart from 2-5mm, electric field strength intensity is 110V/mm, after described electronics cloud cluster accelerated, beat on the intersection position-sensitive anode, on the intersection position-sensitive anode, each two-layer rectangular conductive bar is collected charge signal respectively down, export the charge-sensitive pre-amplification circuit in the electronics read-out system to, after the charge-sensitive pre-amplification circuit amplifies processing to the initial charge signal of importing, signal output port input pulse shaping circuit by the rear end, signal is carried out filter shape, by the signal output port of pulse shaper rear end signal is imported the A/D change-over circuit then, obtain digital signal after signal is sampled, this digital signal is input in the DSP+FPGA Digital Image Processing circuit by A/D change-over circuit signal output part.DSP+FPGA Digital Image Processing circuit calculates the position of the electrode at maximum amount of charge place according to the algorithm in the claim 9 to all charge signals of output, carries out the coarse positioning of electric charge cloud cluster barycenter; Draw the exact position coordinate of electronics cloud cluster barycenter with reference to the quantity of electric charge of adjacent rectangle bus output by fitting algorithm again, namely represent the position of incoming particle; By recorded electronic read-out system charge pulse output time, survey the time of advent of incoming particle, finally realize ultraviolet photon counting integration imaging measurement.

The decoding algorithm of intersection position-sensitive anode, resolve according to following process reasoning:

A. the electric charge cloud cluster is beaten on intersection position-sensitive anode 3, and each rectangular conductive bar 8 on upper strata is to the charge signal Q of electronics read-out system output _8i, each rectangular conductive bar 9 of lower floor is to the charge signal Q of electronics read-out system output _9j

B. from the electron cloud regimental of V-type cascade microchannel plate 2 lower end outgoing from accurate Gaussian Profile because intersect position-sensitive anode 3 at x, the quantity of electric charge of collecting on the y direction is separate, then has

$Q\left(x\right)=\frac{Q_{\mathrm{total}}}{\sqrt{{2\mathrm{\π\δ}}_x}}\exp (-\frac{1}{2}{\left(\frac{x-x_0}{{\mathrm{\δ}}_x}\right)}^2)---\left(1\right)$

$Q\left(y\right)=\frac{Q_{\mathrm{total}}}{\sqrt{2\mathrm{\π}{\mathrm{\δ}}_y}}\exp (-\frac{1}{2}{\left(\frac{y-y_0}{{\mathrm{\δ}}_y}\right)}^2)---\left(2\right)$

X wherein ₀Be that the electronics cloud cluster is at the center of x direction, y ₀Be that the electronics cloud cluster is at the center of y direction, Q _TotalIt is the total amount of electric charge that intersection position-sensitive anode 3 is collected.δ _x, δ _yBe electronics cloud cluster x, the distributed constant on the y direction.And for example the quantity of electric charge that i electrode collected on the direction of x described in a is Q _8i, j quantity of electric charge Q that electrode is collected on the y direction _9j, then the barycenter decoding algorithm of electronics cloud cluster on intersection position-sensitive anode 3 can be expressed as:

$x_0=\frac{P_x\underset{i=1}{\overset{N}{\mathrm{\Σ}}}i*\max [0,(Q_{8i}-\mathrm{Th})]}{\underset{i=1}{\overset{N}{\mathrm{\Σ}}}\max [0,(Q_{8i}-\mathrm{Th})]}---\left(3\right)$

$y_0=\frac{P_y\underset{j=1}{\overset{N}{\mathrm{\Σ}}}j*\max [0,(Q_{9j}-\mathrm{Th})]}{\underset{j=1}{\overset{N}{\mathrm{\Σ}}}\max [0,(Q_{9j}-\mathrm{Th})]}---\left(4\right)$

Wherein, P _xAnd P _yBe the periodicity of x direction and y direction, Th is the noise signal threshold value.From the described charge signal Q of a _8iAnd Q _9jThe maximum amount of charge that the rectangular conductive bar 9 that can draw the rectangular conductive bar 8 of conductive layer 4 and conductive layer 6 is collected respectively in x and y direction and the position at rectangular conductive bar place thereof, the note maximum amount of charge is Q _8maxAnd Q _9maxSuppose the charge Q that i electrode of x direction collected _8iBe maximum, i.e. Q _8i=Q _8max, adjacent electrode quantity of electric charge Q just near i electrode, is got in the exact position of electron cloud so _{8, i-1}, Q _{8, i}, Q _{8, i+1}From equation (1) as can be known, be Q the accurate Gaussian function Q(x of Cloud Distribution) _Total, δ _x, and x ₀The function of three parameters is therefore with three data Q _{8, i-1}, Q _{8, i}, Q _{8, i+1}, just can obtain Q _Total, δ _x, and x ₀But, the just centre coordinate x of electron cloud that in fact we be concerned about ₀So, can simplify and find the solution, taken the logarithm simultaneously in equation (1) both sides, have:

$\ln \left(Q\left(x\right)\right)=-[{x_0}^2-2x_{0}x+x^2+2{{\mathrm{\δ}}_x}^2\ln \left(\frac{\sqrt{2\mathrm{\π}{\mathrm{\δ}}_x}}{Q_{\mathrm{total}}}\right)]/2{{\mathrm{\δ}}_x}^2---\left(5\right)$

Equation (5) the right is the quadratic equation about x, at x=x ₀The time, conic section (parabola) reaches maximum.Therefore can use ln (Q _{8, i-1}), ln (Q _{8, i}), ln (Q _{8, i+1}) find the solution x ₀

$x_0={\mathrm{iP}}_x-P_x\frac{\ln \left(Q_{8,i-1}\right)-\ln \left(Q_{8,i+1}\right)}{2(\ln \left(Q_{8,i-1}\right)+\ln \left(Q_{8,i+1}\right)-2\ln \left(Q_{8,i}\right))}---\left(6\right)$

P wherein _xBe the periodicity of x direction, i is Q on the x direction _8maxThe position of place rectangular conductive striped.

In like manner have:

$y_0=j{P}_y-P_y\frac{\ln \left(Q_{9,j-1}\right)-\ln \left(Q_{9,j+1}\right)}{2(\ln \left(Q_{9,j-1}\right)+\ln \left(Q_{9,j+1}\right)-2\ln \left(Q_{9,j}\right))}---\left(7\right)$

P wherein _yBe the periodicity of y direction, j is Q on the y direction _9maxThe position of place rectangular conductive striped.

Use the present invention, can accurately survey position and the time of advent of incoming particle, this technology can be widely used in fields such as survey of deep space, nuclear radiation, ion detection, biological ultraweak imaging.

Claims (10)

1. intersection position-sensitive anode that is applicable to micro-channel plate detector, it is characterized in that: be divided into upper and lower two-layer, the upper and lower include measure-alike a plurality of rectangular conductive bars, and each rectangular conductive bar on upper strata is on insulating barrier cross-lapping each rectangular conductive bar in lower floor; Each rectangular conductive bar on upper strata is parallel to each other in same plane, and each rectangular conductive bar of lower floor is parallel to each other in same plane; Described insulating barrier is corresponding one by one with each rectangular conductive bar on upper strata, and lay respectively in the drop shadow spread of corresponding rectangular conductive bar, on projecting direction, all rectangular conductive bars of upper strata and lower floor are whole to be formed and intersects grid, each rectangular conductive bar independence output charge signal.

2. intersection position-sensitive anode according to claim 1, it is characterized in that: all rectangular conductive bars of lower floor are wholy set on the dielectric base; Perhaps the bottom surface of each rectangular conductive bar of lower floor arranges discrete insulating barrier, and is corresponding one by one with each rectangular conductive bar of lower floor.

3. intersection position-sensitive anode according to claim 1 is characterized in that: the whole square crossing grid that forms of all rectangular conductive bars of upper strata and lower floor.

4. intersection position-sensitive anode according to claim 1, it is characterized in that: the material of rectangular conductive bar is Au or Cu-Ag alloy, the material of insulating barrier is quartzy or ceramic.

5. intersection position-sensitive anode according to claim 4, it is characterized in that: all rectangular conductive bars of lower floor are wholy set on the dielectric base, and the material of this dielectric base is aluminium oxide ceramics or fused silica glass.

6. intersection position-sensitive anode according to claim 1, it is characterized in that: the width with the straight line insulated trenches that forms between one deck adjacent rectangle bus is 0.1mm.

7. intersection position-sensitive anode according to claim 6, it is characterized in that: the width of all rectangular conductive bars is 0.4mm, and thickness is 2 μ m; All insulating barriers adopt the rectangle insulation strip identical with rectangular conductive bar size.

8. high-performance ultraviolet is counted the integration imaging detection system, comprise detector and electronics read-out system, it is characterized in that: described detector comprises the vacuum envelope that sets gradually, the ultraviolet optics window, the ultraviolet light photo negative electrode, microchannel plate and intersection position-sensitive anode as claimed in claim 1, described ultraviolet light photo negative electrode evaporation microchannel plate surface, microchannel plate adopts the cascade of V-type cascade system, described intersection position-sensitive anode is positioned at 2-5mm behind the microchannel plate exit facet, the output of detector is provided with corresponding interface and pin, and the charge signal that each rectangular conductive bar is independently exported inserts the electronics read-out system; Described electronics read-out system comprises charge-sensitive pre-amplification circuit, pulse bandwidth filtering shaping circuit, A/D change-over circuit and the Digital Image Processing circuit that connects successively.

9. adopt and intersect position-sensitive anode according to claim 1 and realize may further comprise the steps the method for ultraviolet photon counting integration imaging measurement:

Ultraviolet light incoming particle to be measured is beaten on the ultraviolet light photo negative electrode, produced electronics according to photoelectric effect;

The electronics that produces enters V-type cascade microchannel plate after first accelerating field is accelerated, make electron multiplication, forms the electronics cloud cluster in the lower end of V-type cascade microchannel plate;

The electronics cloud cluster is beaten and is being intersected on the position-sensitive anode after second accelerating field is accelerated, and each rectangular conductive bar of intersection position-sensitive anode is exported the charge signal collected respectively to the electronics read-out system;

Calculate the position of the electrode at maximum amount of charge place according to all charge signals of electronics read-out system output, carry out the coarse positioning of electric charge cloud cluster barycenter;

Draw the exact position coordinate of electronics cloud cluster barycenter with reference to the quantity of electric charge of adjacent rectangle bus output by fitting algorithm, namely represent the position of incoming particle; By recorded electronic read-out system charge pulse output time, survey the time of advent of incoming particle, finally realize ultraviolet photon counting integration imaging measurement.

10. the method for realization ultraviolet photon counting integration imaging measurement according to claim 9 is characterized in that, the exact position following algorithm of coordinate employing of electronics cloud cluster barycenter draws:

If each rectangular conductive bar on upper strata is parallel along the x direction, i quantity of electric charge Q that electrode is collected on the x direction _{8, i}Be maximum, i is also as the position of this electrode on the x direction; Each rectangular conductive bar of lower floor is parallel along the y direction, j quantity of electric charge Q that electrode is collected on the y direction _{9, j}Be maximum, j is also as the position of this electrode on the y direction; Then the exact position coordinate of electronics cloud cluster barycenter is

$x_0={\mathrm{iP}}_x-P_x\frac{\ln \left(Q_{8,i-1}\right)-\ln \left(Q_{8,i+1}\right)}{2(\ln \left(Q_{8,i-1}\right)+\ln \left(Q_{8,i+1}\right)-2\ln \left(Q_{8,i}\right))}$

$y_0={\mathrm{jP}}_y-P_y\frac{\ln \left(Q_{9,j-1}\right)-\ln \left(Q_{9,j+1}\right)}{2(\ln \left(Q_{9,j-1}\right)+\ln \left(Q_{9,j+1}\right)-2\ln \left(Q_{9,j}\right)}$

P wherein _xBe the periodicity of x direction, P _yIt is the periodicity of y direction.

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