CN113284973B - 一种高响应度的雪崩光电二极管结构 - Google Patents
一种高响应度的雪崩光电二极管结构 Download PDFInfo
- Publication number
- CN113284973B CN113284973B CN202110526831.2A CN202110526831A CN113284973B CN 113284973 B CN113284973 B CN 113284973B CN 202110526831 A CN202110526831 A CN 202110526831A CN 113284973 B CN113284973 B CN 113284973B
- Authority
- CN
- China
- Prior art keywords
- layer
- gaas
- multiplication
- absorption layer
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 69
- 238000003780 insertion Methods 0.000 claims abstract description 61
- 230000037431 insertion Effects 0.000 claims abstract description 61
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 36
- 239000002070 nanowire Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 10
- 230000001965 increasing effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 2
- 238000005036 potential barrier Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 16
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000004888 barrier function Effects 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract description 4
- 230000005524 hole trap Effects 0.000 abstract description 4
- 239000006096 absorbing agent Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 130
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
一种高响应度的雪崩光电二极管结构涉及雪崩二极管技术领域,解决了低噪声和高倍增增益难以同时实现的问题,二极管结构为纳米线型,包括从下至上顺次设置的GaAs倍增层、窄带隙插入层和吸收层;插入层的材料为GaAs1‑xSbx,吸收层的材料为GaAs1‑ySby;或者;插入层的材料为IniGa1‑iAs,吸收层的材料为InjGa1‑jAs;i和x为固定值,吸收层的In或Sb组分由下至上线性递增。且x>ymin,i>jmin。本发明通过窄带隙插入层在价带形成空穴阱,捕获空穴,并在插入层和倍增层之间形成强空穴势垒以阻挡空穴,增强了雪崩区的电场强度,提高了倍增因子,降低了噪声。
Description
技术领域
本发明涉及雪崩光电二极管技术领域,具体涉及一种高响应度的雪崩光电二极管结构。
背景技术
雪崩光电二极管(APD)由于其由于光生载流子的倍增而具有极高的增益,被认为是高性能光电探测器代表,其依靠光生载流子的雪崩倍增作用,使光生载流子按指数倍增。此外,纳米线雪崩光电二极管可以突破光子探测效率极限,也有助于降低阈值电压。到目前为止,虽然纳米线雪崩光电二极管的研究已经取得了重要的进展,但其性能仍然不能满足商业应用的要求。
一般来讲,为了获得高倍增增益,必须同时满足两个条件:充足的光生载流子和强大的电场,通过设计分离吸收倍增结构最大化光子吸收区域和最小化倍增区域可以同时实现这两个条件。但是,强的电场也将带来高的噪声电流,雪崩光电二极管低的噪声和高的倍增增益特性难以同时实现是目前面临的难题。
发明内容
为了解决上述问题,本发明提供一种高响应度的雪崩光电二极管结构。
本发明为解决技术问题所采用的技术方案如下:
一种高响应度的雪崩光电二极管结构,其特征在于,所述雪崩光电二极管结构为纳米线型,包括从下至上顺次设置的GaAs倍增层、窄带隙插入层和吸收层;
所述窄带隙插入层的材料为GaAs1-xSbx,吸收层的材料为GaAs1-ySby,x为固定值且0<x<1,0<y<1,吸收层的Sb组分由下至上线性递增,窄带隙插入层的Sb组分大于吸收层Sb组分的最小值;
或者;
所述窄带隙插入层的材料为IniGa1-iAs,吸收层的材料为InjGa1-jAs,i为固定值且0<i<1,0<j<1,吸收层的In组分由下至上线性递增,窄带隙插入层的In组分大于吸收层In组分的最小值。
一种高响应度的雪崩光电二极管结构的制备方法,所述窄带隙插入层的材料为GaAs1-xSbx,吸收层的材料为GaAs1-ySby,所述制备方法包括如下步骤:在衬底上生长所述GaAs倍增层,在GaAs倍增层的生长过程中,温度保持在620℃,V/III束流比为25;在GaAs倍增层上生长窄带隙插入层,在窄带隙插入层的生长过程中Sb/Ga束流比为5;在窄带隙插入层上生长吸收层,生长吸收层时,Sb/Ga束流比从0到5线性增加,吸收层生长结束后保持Sb束流源开启直至降温完成。
本发明的有益效果是:
本发明一种高响应度的雪崩光电二极管结构通过结构设计在保障高倍增因子的同时降低噪声,将禁带宽度较小的窄带隙插入层插入GaAs倍增层和吸收层之间,在价带形成空穴阱,捕获空穴,并在窄带隙插入层和GaAs倍增层之间形成强空穴势垒以阻挡空穴,从而增强了雪崩区的电场强度,倍增因子得到提高,同时由于窄带隙插入层的空穴捕获效应,可以降低雪崩光电二极管的暗电流,降低其噪声。本发明还提供了的上述一种高响应度的雪崩光电二极管结构的简单的、制备效果好的制备方法。
附图说明
图1为本发明的一种高响应度的雪崩光电二极管结构的能带结构图。
图2为本发明的一种高响应度的雪崩光电二极管结构的结构图。
图3为本发明的一种高响应度的雪崩光电二极管结构的IV曲线图。
图4为本发明的一种高响应度的雪崩光电二极管结构的能带结构图。
图5为本发明的一种高响应度的雪崩光电二极管结构的部分电场强度分布图。
图6为本发明的一种高响应度的雪崩光电二极管结构在10V偏压下的噪声电流谱。
具体实施方式
下面结合附图和实施例对本发明做进一步详细说明。
一种高响应度的雪崩光电二极管结构,雪崩光电二极管结构为纳米线型,如图1,图1中纳米线型从左至右设置,其中EC表示导带能级,EV表示价带能级,下面具体实施方式中按照从下至上的方式描述,雪崩光电二极管结构包括GaAs倍增层、设置在GaAs倍增层上的窄带隙插入层和设置在窄带隙插入层上的吸收层,即窄带隙插入层插入在GaAs倍增层和吸收层间。窄带隙插入层的材料为GaAs1-xSbx,称为GaAs1-xSbx插入层,吸收层的材料为GaAs1- ySby,称为GaAs1-ySby吸收层;或者,窄带隙插入层的材料为IniGa1-iAs,称为IniGa1-iAs插入层,吸收层的材料为InjGa1-jAs,称为InjGa1-jAs吸收层。若窄带隙插入层的材料为GaAs1- xSbx,吸收层的材料为GaAs1-ySby,则x为固定值,0<x<1,0<y<1,GaAs1-ySby吸收层的Sb组分由下至上线性递增,GaAs1-xSbx插入层的Sb组分大于GaAs1-ySby吸收层Sb组分的最小值。GaAs1-ySby吸收层包括至少2层Sb组分由下至上逐渐增加的GaAsSb子吸收层,由下至上设置的GaAsSb子吸收层的Sb组分逐渐增加且线性递增,任意两个GaAsSb子吸收层的Sb组分不同,且位于上侧的GaAsSb子吸收层的Sb组分大于位于下侧的GaAsSb子吸收层的Sb组分,也就是GaAs1-ySby吸收层包括若干自下至上Sb组分逐渐增加的组分渐增层(GaAsSb子吸收层)。GaAs1-xSbx插入层的Sb组分大于位于GaAs1-ySby吸收层最下侧的GaAsSb子吸收层的Sb组分,即GaAs1-xSbx插入层的Sb组分大于与其相邻的GaAsSb子吸收层的Sb组分。若窄带隙插入层的材料为IniGa1-iAs,吸收层的材料为InjGa1-jAs,则i为固定值,0<i<1,0<j<1,InjGa1-jAs吸收层的In组分由下至上线性递增,IniGa1-iAs插入层的In组分大于InjGa1-jAs吸收层In组分的最小值。InjGa1-jAs吸收层包括至少2层In组分由下至上逐渐增加的InGaAs子吸收层,由下至上设置的InGaAs子吸收层的In组分逐渐增加且线性递增,任意两个InGaAs子吸收层的In组分不同,且位于上侧的InGaAs子吸收层的In组分大于位于下侧的InGaAs子吸收层的In组分,也就是InjGa1-jAs吸收层包括若干自下至上In组分逐渐增加的组分渐增层(InGaAs子吸收层)。IniGa1-iAs插入层的In组分大于位于InjGa1-jAs吸收层最下侧的InGaAs子吸收层的In组分,即IniGa1-iAs插入层的In组分大于与其相邻的InGaAs子吸收层的In组分。
下面以具有GaAs1-xSbx插入层和GaAs1-ySby吸收层的雪崩光电二极管进行详述,下述制备方法、雪崩光电二极管的特征等均适用于具有IniGa1-iAs插入层和InjGa1-jAs吸收层的雪崩光电二极管。
一种高响应度的雪崩光电二极管结构的制备方法,具体为:取Si衬底,将Si衬底在HF溶液中腐蚀以部分除去SiO2,随后用乙醇超声清洗5min。将处理后的衬底转移到MBE(分子束外延)腔室进行预处理后开始生长。在衬底上生长GaAs倍增层,GaAs倍增层的生长时间为10min,在GaAs倍增层的生长过程中,温度保持在620℃,V/III束流比为25。在GaAs倍增层上生长GaAs1-xSbx插入层,生长时间为1min,使Sb/Ga束流比保持为5。生长GaAs1-ySby吸收层的生长时间为10min,生长GaAs1-ySby吸收层时,Sb/Ga束流比从0到5线性增加,在生长结束后的降温过程中保持Sb束流源开启,起到保护作用,直至完成降温生长停止。整根纳米线的高度(即图1中的长度)约为1000nm左右,第一段高为620nm,第二段高为80nm,第三段高为300nm。
将生长好的纳米线制备电极。将生长好的纳米线采用机械剥离的方式从Si衬底上剥离,然后转移到的表面带有100nm厚SiO2的p+-Si衬底上。采用电子束光刻技术制备正负电极,正电极连接GaAs倍增层,负电极连接GaAs1-ySby吸收层,得到的一种高响应度的雪崩光电二极管结构的结构图如图2,其暗场下的I-V曲线如图3所示,可知当加反向电压时,电流很小且几乎不变,直到达到一定值之后,电流突然急剧增加,发生雪崩击穿,根据图3的曲线可知本发明的器件是雪崩二极管。
由于GaAs1-ySby吸收层从下至上(即图1中从左至右)的Sb组分逐渐增加时,GaAs1- ySby吸收层从下至上的禁带宽度逐渐减小。纳米线第二段GaAs1-xSbx插入层的Sb组分高于第三段的Sb组分,实质上是在纳米线第一段GaAs倍增层和第三段GaAs1-ySby吸收层之间插入一段禁带宽度比较小的GaAs1-xSbx插入层,形成图1的能带结构。本实施方式中具有高Sb组分GaAsSb插入层和梯度组分GaAsSb吸收层的雪崩二极管在51.3mW/cm2光功率密度下在18V反向偏压时的响应度可以达到103A/W量级,最大的倍增因子可以达到104。
图4为雪崩光电二极管能带结构(GaAsSb体系或InGaAs体系的能带结构均如图4所示意的),横坐标的位置对应纳米线的高度/长度,图4上侧部分是没有施加电压即0V时的能带结构,图4下侧部分是施加反向18V电压时的能带结构,从两个能带结构可以看到在GaAs1-xSbx插入层中形成了空穴势阱,同时在GaAs1-xSbx插入层和GaAs倍增层界面处形成了空穴势垒,空穴势垒阻挡了空穴从插入层向倍增层运动,从而提高了倍增层的电场强度,从而得到高响应度的雪崩光电二极管,也就是GaAs1-xSbx插入层可以提高倍增因子和响应度。图5为雪崩光电二极管结构的部分电场强度分布图,为倍增层、插入层和吸收层交界部分的电场强度分布图,由图5可知倍增层得到了高的电场强度。基于上述图4和图5,表明GaAs1- xSbx插入层改变了APD的能带结构并增加了倍增区的电场强度,这是因为GaAs1-xSbx插入层可用作空穴阱以捕获空穴,并在插入层和倍增区之间形成强势垒以阻挡空穴,从而增强了雪崩区的电场强度。因此,通过设置GaAs1-xSbx插入层,器件的倍增因子和响应度都得到了改善。
表征本发明雪崩二极管的噪声特性,测试了-10V偏压下的噪声电流谱,如图6所示。该曲线斜率为1/f,f表示频率,表明本发明的一种高响应度的雪崩光电二极管结构噪声由1/f噪声主导,电压10V时噪声电流密度达到1023A2/Hz,具有低的噪声电流。通过在GaAs倍增层和GaAs1-ySby吸收层之间插入GaAs1-xSbx插入层,提高GaAs倍增层雪崩区电场强度,提高雪崩二极管的响应度,同时降低噪声,获得了高响应度、低噪声的GaAsSb纳米线雪崩探测器。
本发明一种高响应度的雪崩光电二极管结构通过结构设计在保障高倍增因子的同时降低噪声,将禁带宽度较小的窄带隙插入层插入GaAs倍增层和吸收层之间,在价带形成空穴阱,捕获空穴,并在窄带隙插入层和GaAs倍增层之间形成强空穴势垒以阻挡空穴,从而增强了雪崩区的电场强度。因此,本发明设计了一种带有特殊能带结构的纳米线雪崩探测器,倍增因子得到提高,同时由于窄带隙插入层的空穴捕获效应,可以降低雪崩光电二极管的暗电流,降低其噪声。本发明的一种高响应度的雪崩光电二极管结构的制备方法具有操作简单、制备效果好的优点。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (6)
1.一种高响应度的雪崩光电二极管结构,其特征在于,所述雪崩光电二极管结构为纳米线型,包括从下至上顺次设置的GaAs倍增层、窄带隙插入层和吸收层;
所述窄带隙插入层的材料为GaAs1-xSbx,吸收层的材料为GaAs1-ySby,x为固定值且0<x<1,0<y<1,吸收层的Sb组分由下至上线性递增,窄带隙插入层的Sb组分大于吸收层Sb组分的最小值;
或者;
所述窄带隙插入层的材料为IniGa1-iAs,吸收层的材料为InjGa1-jAs,i为固定值且0<i<1,0<j<1,吸收层的In组分由下至上线性递增,窄带隙插入层的In组分大于吸收层In组分的最小值。
2.如权利要求1所述的一种高响应度的雪崩光电二极管结构,其特征在于,所述雪崩光电二极管结构还包括连接GaAs倍增层的正电极和连接吸收层的负电极。
3.如权利要求1所述的一种高响应度的雪崩光电二极管结构,其特征在于,所述插入层的高度为80nm,吸收层的高度为300nm。
4.如权利要求1所述的一种高响应度的雪崩二极管结构,其特征在于,在所述插入层中形成了空穴势阱,在插入层与GaAs倍增层界面处形成了空穴势垒。
5.如权利要求1至4中任意一项所述的一种高响应度的雪崩光电二极管结构的制备方法,其特征在于,所述窄带隙插入层的材料为GaAs1-xSbx,吸收层的材料为GaAs1-ySby,所述制备方法包括如下步骤:在衬底上生长所述GaAs倍增层,在GaAs倍增层的生长过程中,温度保持在620℃,V/III束流比为25;在GaAs倍增层上生长窄带隙插入层,在窄带隙插入层的生长过程中Sb/Ga束流比为5;在窄带隙插入层上生长吸收层,生长吸收层时,Sb/Ga束流比从0到5线性增加,吸收层生长结束后保持Sb束流源开启直至降温完成。
6.如权利要求5所述的一种高响应度的雪崩光电二极管结构的制备方法,其特征在于,所述GaAs倍增层的生长时间为10min,插入层的生长时间为1min,吸收层的生长时间为10min。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110526831.2A CN113284973B (zh) | 2021-05-14 | 2021-05-14 | 一种高响应度的雪崩光电二极管结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110526831.2A CN113284973B (zh) | 2021-05-14 | 2021-05-14 | 一种高响应度的雪崩光电二极管结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113284973A CN113284973A (zh) | 2021-08-20 |
CN113284973B true CN113284973B (zh) | 2022-07-05 |
Family
ID=77279327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110526831.2A Active CN113284973B (zh) | 2021-05-14 | 2021-05-14 | 一种高响应度的雪崩光电二极管结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113284973B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3995303A (en) * | 1975-06-05 | 1976-11-30 | Bell Telephone Laboratories, Incorporated | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
CN103050498A (zh) * | 2012-12-28 | 2013-04-17 | 中山大学 | 一种微纳米线阵列结构紫外雪崩光电探测器及其制备方法 |
WO2016081476A1 (en) * | 2014-11-18 | 2016-05-26 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
CN109148636A (zh) * | 2018-07-06 | 2019-01-04 | 上海交通大学 | 一种单光子探测器及其制备方法 |
CN111834489A (zh) * | 2019-04-17 | 2020-10-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 硅基深紫外雪崩光电二极管及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9000353B2 (en) * | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US9691933B2 (en) * | 2014-03-26 | 2017-06-27 | University Of Houston System | Radiation and temperature hard multi-pixel avalanche photodiodes |
-
2021
- 2021-05-14 CN CN202110526831.2A patent/CN113284973B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3995303A (en) * | 1975-06-05 | 1976-11-30 | Bell Telephone Laboratories, Incorporated | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
CN103050498A (zh) * | 2012-12-28 | 2013-04-17 | 中山大学 | 一种微纳米线阵列结构紫外雪崩光电探测器及其制备方法 |
WO2016081476A1 (en) * | 2014-11-18 | 2016-05-26 | Shih-Yuan Wang | Microstructure enhanced absorption photosensitive devices |
CN109148636A (zh) * | 2018-07-06 | 2019-01-04 | 上海交通大学 | 一种单光子探测器及其制备方法 |
CN111834489A (zh) * | 2019-04-17 | 2020-10-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 硅基深紫外雪崩光电二极管及其制备方法 |
Non-Patent Citations (1)
Title |
---|
InGaAs–GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode;Alan C. Farrell等;《Nano Lett.》;20181205;第19卷;第582-590页 * |
Also Published As
Publication number | Publication date |
---|---|
CN113284973A (zh) | 2021-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8912432B2 (en) | Photovoltaic device including an intermediate layer | |
EP2398062A2 (en) | High efficiency InGaAsN solar cell and method of making the same | |
KR20110073493A (ko) | 나노구조 포토다이오드 | |
US20210249545A1 (en) | Optoelectronic devices having a dilute nitride layer | |
JP7224560B1 (ja) | 半導体受光素子及び半導体受光素子の製造方法 | |
Baranov et al. | Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures | |
TW201438264A (zh) | 化合物半導體太陽能電池及其製造方法 | |
JP2009026887A (ja) | 太陽電池 | |
CN106298990B (zh) | 一种利用自发极化电场的非极性太阳能电池 | |
JP2011077293A (ja) | 多接合型太陽電池 | |
JP7024918B1 (ja) | アバランシェフォトダイオード | |
CN210349846U (zh) | 一种吸收、倍增层分离结构的ⅲ族氮化物半导体雪崩光电探测器 | |
CN113284973B (zh) | 一种高响应度的雪崩光电二极管结构 | |
MANZOOR et al. | Carrier Density and Thickness Optimization of In | |
JP2011077295A (ja) | 接合型太陽電池 | |
Hwang et al. | Preserving voltage and long wavelength photoresponse in GaSb/GaAs quantum dot solar cells | |
JP7389457B2 (ja) | 太陽電池 | |
RU2605839C2 (ru) | Фотоэлектрический преобразователь | |
JP2013172072A (ja) | 2接合太陽電池 | |
JP2016028413A (ja) | 化合物半導体太陽電池、及び、化合物半導体太陽電池の製造方法 | |
JPH0955522A (ja) | トンネルダイオード | |
CN113284972B (zh) | 一种量子阱雪崩光电二极管 | |
Rakpaises et al. | Demonstration of photovoltaic effects in hybrid type-I InAs/GaAs quantum dots and type-II GaSb/GaAs quantum dots | |
CN113193089B (zh) | 基于掺杂(Si)GeSn有源区的CMOS技术兼容硅基光源器件及其制备方法 | |
CN110518085B (zh) | 锑化物超晶格雪崩光电二极管及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |