CN113278948A - Tin sulfide/tin disulfide heterojunction material and preparation method thereof - Google Patents
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Abstract
The invention discloses a tin sulfide/tin disulfide heterojunction material and a preparation method thereof. The preparation method adopted by the invention is simple and convenient to operate and good in repeatability, and the optimal growth parameters in the high-quality mixed dimension heterojunction are obtained by simply adjusting the temperature of the sulfur powder temperature zone and the tin sulfide temperature zone. The one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction prepared by the invention has unique photoelectric characteristics and has potential application value in the fields of nano-electronics and photoelectronic devices.
Description
Technical Field
The invention belongs to the field of low-dimensional semiconductor heterojunction materials, and particularly relates to a mixed-dimension heterojunction material formed by quasi-one-dimensional (1D) tin sulfide and two-dimensional (2D) tin disulfide and a preparation method thereof.
Background
Tin-based chalcogenide material with rich earth content and high glossThe absorption coefficient, the adjustable band gap and other excellent photoelectric properties show huge application potential in the application of novel electronic and optoelectronic devices. Of these tin-based chalcogenide materials, tin sulfide (SnS) and tin disulfide (SnS)2) Are layered van der waals materials, enabling them to achieve two-dimensional thin layer structures by mechanical lift-off or vapor phase epitaxy methods. Wherein, SnS is a narrow gap semiconductor (the band gap value is about 1.1 eV), and the synthesized nano structure usually shows n-type characteristics; and SnS2Has relatively large forbidden band width (the band gap value is about 2.2 eV), high carrier mobility and high optical absorption coefficient, and the prepared nano structure is easy to show p-type characteristics. Thus, SnS/SnS composed of tin sulfide and tin disulfide2The heterostructure not only can form a natural p-n junction, but also can widen the spectrum absorption range of the heterostructure by utilizing the obvious difference of band gaps of two materials; further, narrow-bandgap SnS and wide-bandgap SnS2The formed heterojunction forms special type II band arrangement, so that photoproduction electrons and holes are effectively separated, and the photogeneration electrons and the holes can be further applied to the fields of photoelectric detectors, photovoltaic devices, photocatalysis and the like.
To realize the application of the method on photoelectric devices, the preparation of high-quality and shape-controllable SnS/SnS2Heterojunction materials are an important prerequisite. Most previous researches focused on two-dimensional SnS/SnS2Preparation of Van der Waals heterojunction, and is prepared from one-dimensional SnS nanowire and two-dimensional SnS2The mixed dimension heterojunction formed by the nanosheets has not been reported. Compare two-dimensional SnS/SnS2Van der Waals heterojunction, one-dimensional SnS/two-dimensional SnS2The mixed-dimension heterojunction can show the following advantages: (1) help to create a restriction in the planar spatial distribution of its carriers; (2) the energy band structure of the heterojunction composition material is beneficial to independently regulating and controlling the gate voltage; (3) easy planar contact of the electrodes. The characteristics and advantages of the properties enable one-dimensional SnS/two-dimensional SnS2The heterojunction has very wide application prospect in the aspects of electronic and optoelectronic devices. At present, SnS/SnS is prepared2The method of the heterojunction material mainly comprises the following steps: mechanical stripping and transferring method, hydrothermal synthesis, and step-by-step chemical vapor deposition. Wherein the mechanical peel transferThe method is that SnS and SnS are firstly2The heterojunction, which is formed by being peeled off from a single crystal sample and then stacked by a wet or dry transfer method, has advantages in that intrinsic properties of materials can be secured, but the method easily causes contamination of the surface interface of the heterojunction, and the yield is low. The hydrothermal synthesis method is based on the self-assembly of a solution, template-assisted growth and heat treatment processes, and is suitable for preparing a large batch of nano materials, but the obtained heterojunction material is small in size and difficult to control in appearance and structure; in addition, external impurities and the like in the solution adhere between the interfaces to seriously degrade the performance and stability of the heterojunction. The step-by-step Chemical Vapor Deposition (CVD) method is based on the CVD method that SnS and SnS are grown step by step2A material; in the growth process, the first material to be grown is generally taken as a substrate, and other materials are epitaxially grown on the side edge or the vertical direction of the first material; the method is beneficial to preparing large-area heterojunction, but the growth process is difficult to control, and single crystal and mixed crystal are easy to occur; meanwhile, the heterogeneous interface prepared by the step-by-step CVD method is easy to have defects, so that the quality of the heterogeneous crystal is low. Therefore, a new preparation method is developed to obtain high-quality and controllable-shape one-dimensional SnS/two-dimensional SnS2Mixed-dimension heterojunctions are particularly important for achieving their device applications.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a tin sulfide/tin disulfide heterojunction material and a preparation method thereof. The tin sulfide/tin disulfide heterojunction prepared by the invention is a mixed-dimension heterojunction formed by a one-dimensional tin sulfide nanowire and a two-dimensional tin disulfide nanosheet, and the preparation method provided by the invention is that the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction can be controllably grown on a mica substrate by a one-step chemical vapor deposition method; the method realizes the controllable and stable growth of the one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction, and effectively avoids the formation of independent one-dimensional nanowires and two-dimensional nanosheets in the growth process.
The technical method adopted by the invention comprises the following steps: the one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction material and the preparation method thereof are provided, and the preparation method comprises the following steps:
the method comprises the following steps: annealing the CVD tube furnace at the high temperature of 600 ℃, and flushing with high-purity argon of 500sccm during annealing;
step two: selecting sulfur (S) powder and tin sulfide (SnS) powder as reaction sources, placing a quartz boat filled with the S powder in a first temperature zone of a three-temperature-zone CVD (chemical vapor deposition) tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the downstream direction of the SnS powder;
step three: vacuumizing the CVD tube furnace to below 2Pa, and introducing high-purity argon (200-500 sccm) to the standard atmospheric pressure;
step four: simultaneously heating the S powder temperature zone and the SnS powder temperature zone, respectively heating to 160 ℃ and 660 ℃ at constant speed within 60min, and keeping the temperature for 10-30min, wherein argon with constant flow velocity is used as a carrying and protecting gas in the whole process;
step five: and (4) after the reaction is finished, naturally cooling the CVD tube furnace in an argon environment with constant flow rate.
In a preferred embodiment of the present invention, the mass of the S powder and the mass of the SnS powder weighed in the step two are 150mg and 50mg, respectively; the fluorophlogopite substrate was placed 6cm from the SnS powder in the downstream direction of the carrier gas flow.
In a preferred embodiment of the present invention, in the fourth step, the temperature of the S powder temperature zone and the SnS temperature zone is simultaneously raised to 140 ℃ and 660 ℃ respectively, and the temperature is maintained for 30 min.
In a preferred embodiment of the present invention, the gas flow rate in the tube furnace is maintained at 60-100sccm throughout the heating, maintaining and cooling processes.
Compared with the prior art, the invention has the following advantages:
(1) the controllable preparation of a high-quality one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction is realized, and the heterojunction is composed of a one-dimensional tin sulfide nanowire and a two-dimensional tin disulfide nanosheet, so that the space separation of a photon-generated carrier and the formation of a self-organized p-n junction are facilitated;
(2) the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction grown by the method has the characteristics of good crystallinity, high uniformity, good dispersibility and the like, and the introduction of independent one-dimensional tin sulfide and two-dimensional tin disulfide is effectively avoided;
(3) the invention selects simple sulfur powder and tin sulfide powder as reaction precursors, and adopts a one-step chemical vapor deposition method to obtain the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction.
Drawings
Figure 1 is an optical microscope image of the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction obtained in example 1.
Figure 2 is an atomic force microscope scan of the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction obtained in example 1.
FIG. 3 is a Raman spectrum of the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction obtained in example 1.
FIG. 4 is a high resolution TEM image of the one-dimensional Sn sulfide/two-dimensional Sn disulfide heterojunction obtained in example 1.
FIG. 5 is an optical microscope photograph of one-dimensional tin sulfide nanowires obtained in example 2.
FIG. 6 is an optical microscope photograph showing the coexistence of one-dimensional tin sulfide nanowires and heterocrystals obtained in example 3.
FIG. 7 is an optical microscope photograph showing the coexistence of two-dimensional tin disulfide nanosheets and heterocrystals obtained in example 4.
Figure 8 is an optical microscope photograph of the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction obtained in example 5.
Detailed Description
A one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction and a preparation method thereof comprise the following steps:
the method comprises the following steps: wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing;
step two: 150mg of sulfur powder (S) and 50mg of tin sulfide powder (SnS) are respectively weighed and placed in a quartz boat; placing the quartz boat filled with S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, and placing the quartz boat filled with SnS powder in a second temperature zone; simultaneously, placing the freshly peeled fluorophlogopite substrate in the downstream direction of the SnS powder, wherein the distance between the freshly peeled fluorophlogopite substrate and the SnS powder is 6cm;
step three: pumping the CVD tube furnace, firstly opening a mechanical pump to reduce the pressure in the furnace to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm;
step four: simultaneously heating the S powder temperature zone and the SnS powder temperature zone to 100-class 180 ℃ and 640-class 660 ℃ at constant speed within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process;
step five: after the reaction, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The invention is further illustrated by the following examples. The following method embodiment for controllably preparing the one-dimensional tin sulfide/two-dimensional tin disulfide mixed heterojunction adopts a three-temperature-zone CVD tube furnace (PECVD high vacuum tube furnace, HTL 1500-80A), absolute ethyl alcohol, sulfur powder (S, purity is more than or equal to 99.5%), tin sulfide (SnS, purity is more than or equal to 99.5%), and fluorophlogopite sheet (Ra is less than 0.1 nm).
Example 1
Wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing; respectively weighing 150mg of S powder and 50mg of SnS powder, and placing the powder in a quartz boat; placing the quartz boat filled with the S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the CVD tube furnace at a position 6cm away from the downstream direction of the SnS powder; after checking the airtightness of the CVD tube furnace, exhausting the CVD tube furnace, firstly opening a mechanical pump to reduce the air pressure to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm; simultaneously heating an S powder temperature zone and an SnS temperature zone to 140 ℃ and 660 ℃ within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process; after the reaction was completed, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The results of this example: the morphology was observed with an optical microscope as in figure 1,one-dimensional tin sulfide/two-dimensional tin disulfide heterojunctions are uniformly distributed on the fluorophlogopite substrate, the average size is 20-30 mu m, and all the heterojunctions have fixed crystal orientation. The embedded picture at the upper right corner is a high-power optical microscopic picture of the heterojunction, so that the tin sulfide nanowire positioned in the center of the heterojunction and the tin disulfide nanosheets symmetrically grown on two sides of the nanowire can be clearly identified, and the formation of the one-dimensional/two-dimensional mixed-dimension heterojunction is indicated. The atomic force microscope scanning image result of fig. 2 clearly shows that there is a regular boundary between one-dimensional tin sulfide and two-dimensional tin disulfide crystals in the heterojunction, indicating the formation of a high-quality one-dimensional/two-dimensional heterojunction. FIG. 3 is a test of the interface position of tin sulfide nanowires and tin disulfide nanoplatelets in a heterojunction using confocal micro-Raman spectroscopy with a wavelength of 532 nm, showing a one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction (SnS/SnS)2) The Raman peak position of the crystal has the Raman peaks of the tin disulfide and the tin sulfide at the same time, and the existence of two crystals in the heterojunction is illustrated. Fig. 4 is a transmission electron microscope test of the one-dimensional/two-dimensional heterocrystal, the high-resolution transmission electron microscope image on the right image can clearly distinguish the obvious crystal boundary, and two sides of the heterointerface respectively correspond to the crystal structures of tin sulfide and tin disulfide, further showing the formation of the high-quality one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction.
Example 2
Wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing; respectively weighing 150mg of S powder and 50mg of SnS powder, and placing the powder in a quartz boat; placing the quartz boat filled with the S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the CVD tube furnace at a position 6cm away from the downstream direction of the SnS powder; after checking the airtightness of the CVD tube furnace, exhausting the CVD tube furnace, firstly opening a mechanical pump to reduce the air pressure to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm; simultaneously heating an S powder temperature zone and an SnS temperature zone to 100 ℃ and 660 ℃ within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process; after the reaction was completed, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The results of this example: as shown in FIG. 5, when the morphology was observed by an optical microscope, it was observed that a large number of independent one-dimensional tin sulfide nanowires were formed on the fluorophlogopite substrate, and the average size was 30 to 50 μm. The top right inset is a high power optical microscope image of a one-dimensional tin sulfide nanowire. The result shows that at the low sulfur powder temperature, one-dimensional tin sulfide nanowires tend to be formed, and one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction cannot be prepared.
Example 3
Wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing; respectively weighing 150mg of S powder and 50mg of SnS powder, and placing the powder in a quartz boat; placing the quartz boat filled with the S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the CVD tube furnace at a position 6cm away from the downstream direction of the SnS powder; after checking the airtightness of the CVD tube furnace, exhausting the CVD tube furnace, firstly opening a mechanical pump to reduce the air pressure to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm; simultaneously heating an S powder temperature zone and an SnS temperature zone to 120 ℃ and 660 ℃ within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process; after the reaction was completed, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The results of this example: as shown in fig. 6, the morphology of the fluorophlogopite substrate is observed by using an optical microscope, and a small amount of independent one-dimensional tin sulfide nanowires and a large amount of one-dimensional/two-dimensional mixed heterojunction are observed to be generated on the fluorophlogopite substrate, wherein the average size is 20 μm. The embedded image at the upper right corner is a high-power optical microscope image of the heterojunction, so that the tin disulfide nanosheets positioned on two sides of the nanowire have no obvious crystal boundary and the heterojunction is not uniformly distributed. The result shows that the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction with high crystal quality and good uniformity can not grow at a lower sulfur powder temperature.
Example 4
Wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing; respectively weighing 150mg of S powder and 50mg of SnS powder, and placing the powder in a quartz boat; placing the quartz boat filled with the S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the CVD tube furnace at a position 6cm away from the downstream direction of the SnS powder; after checking the airtightness of the CVD tube furnace, exhausting the CVD tube furnace, firstly opening a mechanical pump to reduce the air pressure to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm; simultaneously heating an S powder temperature zone and an SnS temperature zone to 160 ℃ and 660 ℃ within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process; after the reaction was completed, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The results of this example: the morphology of the composite material is observed by using an optical microscope as shown in FIG. 7, and a small amount of one-dimensional/two-dimensional mixed heterojunction and a large amount of independent two-dimensional tin disulfide nanosheets with the size of 15-20 μm are observed to be generated on the fluorophlogopite substrate. The top right inset is a high power optical microscope image of a two-dimensional tin disulfide nanoplatelet. The result shows that at higher sulfur powder temperature, the two-dimensional selenium disulfide nanosheet tends to be formed, which is not beneficial to the growth of the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction.
Example 5
Wiping the three-temperature-zone CVD tubular furnace clean by absolute ethyl alcohol, annealing at the high temperature of 600 ℃ for 10min, and flushing by using high-purity argon of 500sccm during annealing; respectively weighing 150mg of S powder and 50mg of SnS powder, and placing the powder in a quartz boat; placing the quartz boat filled with the S powder in a first temperature zone in a three-temperature-zone CVD tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the CVD tube furnace at a position 6cm away from the downstream direction of the SnS powder; after checking the airtightness of the CVD tube furnace, exhausting the CVD tube furnace, firstly opening a mechanical pump to reduce the air pressure to 5Pa, and then opening a molecular pump to below 2 Pa; then, rapidly inflating the CVD tube furnace to the standard atmospheric pressure by using high-purity argon of 500 sccm; simultaneously heating an S powder temperature zone and an SnS temperature zone to 140 ℃ and 640 ℃ within 60min, and keeping the temperature for 30min, wherein 60sccm argon is used as a carrying and protecting gas in the whole process; after the reaction was completed, the CVD tube furnace was naturally cooled in an atmosphere of a constant flow rate of 60sccm argon gas.
The results of this example: as shown in fig. 8, the morphology of the fluorophlogopite substrate is observed by using an optical microscope, and the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction with the size of 15-20 μm exists on the fluorophlogopite substrate, but the growth orientation of the heterojunction is not completely consistent, the density is low, and the uniformity is poor. The top right inset is a high power optical microscope image of the heterojunction. The results show that at lower sulfur powder temperature, the nucleation rate of the heterojunction is reduced and the oriented growth of the heterojunction is influenced.
Claims (4)
1. A one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction and a preparation method thereof comprise the following steps:
the method comprises the following steps: annealing the CVD tube furnace at the high temperature of 600 ℃, and flushing with high-purity argon of 500sccm during annealing;
step two: selecting sulfur (S) powder and tin sulfide (SnS) powder as reaction sources, placing a quartz boat filled with the S powder in a first temperature zone of a three-temperature-zone CVD (chemical vapor deposition) tube furnace, placing the quartz boat filled with the SnS powder in a second temperature zone, and simultaneously placing a freshly peeled fluorophlogopite substrate in the downstream direction of the SnS powder;
step three: vacuumizing the CVD tube furnace to below 2Pa, and introducing high-purity argon (200-500 sccm) to the standard atmospheric pressure;
step four: simultaneously heating the S powder temperature zone and the SnS powder temperature zone, respectively heating to 160 ℃ and 660 ℃ at constant speed within 60min, and keeping the temperature for 10-30min, wherein argon with constant flow velocity is used as a carrying and protecting gas in the whole process;
step five: after the reaction is finished, naturally cooling the CVD tube furnace in an argon environment with constant flow rate;
the method is characterized in that the S powder and the SnS powder weighed in the second step are 150mg and 50mg respectively in mass; in the second step, the fluorophlogopite substrate is positioned at the position 6cm away from the SnS powder and is positioned in the downstream direction of the flow direction of the carrier gas; the gas flow rate in the tubular furnace in the fourth step and the fifth step is kept between 60 and 100 sccm.
2. The one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction material and the preparation method thereof as claimed in claim 1, wherein the optimal S powder temperature zone temperature of the one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction prepared by one-step chemical vapor deposition method is 140 ℃, and the optimal SnS powder temperature zone temperature is 660 ℃.
3. The one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction material and the preparation method thereof as claimed in claim 1, wherein the holding temperature time for preparing the one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction by one-step chemical vapor deposition method is 30 min.
4. A one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction is characterized in that: the method as claimed in any one of claims 1 to 3, wherein the one-dimensional tin sulfide/two-dimensional tin disulfide mixed dimension heterojunction material is grown on the surface of the fluorophlogopite substrate, and the one-dimensional tin sulfide/two-dimensional tin disulfide heterojunction has the characteristics of planar lateral growth structure and consistent crystal growth orientation.
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| CN114477270A (en) * | 2022-02-21 | 2022-05-13 | 福建师范大学 | Method for passivating and growing ultrathin stannous sulfide nanosheets by using sulfur |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681777A (en) * | 1986-05-05 | 1987-07-21 | Engelken Robert D | Method for electroless and vapor deposition of thin films of three tin sulfide phases on conductive and nonconductive substrates |
| CN102897827A (en) * | 2012-10-09 | 2013-01-30 | 东华大学 | Method for phased synthesis of SnS, SnS2 or SnS/SnS2 heterojunction nanocrystalline material by one-step process |
| WO2013160369A1 (en) * | 2012-04-26 | 2013-10-31 | Université Du Luxembourg | Method for manufacturing a semiconductor thin film |
| CN104167469A (en) * | 2014-08-12 | 2014-11-26 | 华中科技大学 | Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time |
| CN106006720A (en) * | 2016-05-30 | 2016-10-12 | 昆明理工大学 | Method for preparing SnS/SnS2 heterojunction material and application of SnS/SnS2 heterojunction material |
| US20170073809A1 (en) * | 2014-02-21 | 2017-03-16 | Lg Electronics Inc. | Method for manufacturing metal chalcogenide thin film and thin film manufactured thereby |
| CN108539175A (en) * | 2018-04-23 | 2018-09-14 | 中国计量大学 | A kind of molybdenum disulfide/stannic disulfide/graphene composite material and preparation method thereof |
| CN110047912A (en) * | 2019-05-24 | 2019-07-23 | 合肥本源量子计算科技有限责任公司 | A kind of vertical heterojunction material and chemical vapor deposition unit |
| CN111450813A (en) * | 2020-05-12 | 2020-07-28 | 陈艮 | SnS2-g-C3N4Heterojunction photocatalytic degradation material and preparation method thereof |
-
2021
- 2021-04-16 CN CN202110410386.3A patent/CN113278948B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681777A (en) * | 1986-05-05 | 1987-07-21 | Engelken Robert D | Method for electroless and vapor deposition of thin films of three tin sulfide phases on conductive and nonconductive substrates |
| WO2013160369A1 (en) * | 2012-04-26 | 2013-10-31 | Université Du Luxembourg | Method for manufacturing a semiconductor thin film |
| CN102897827A (en) * | 2012-10-09 | 2013-01-30 | 东华大学 | Method for phased synthesis of SnS, SnS2 or SnS/SnS2 heterojunction nanocrystalline material by one-step process |
| US20170073809A1 (en) * | 2014-02-21 | 2017-03-16 | Lg Electronics Inc. | Method for manufacturing metal chalcogenide thin film and thin film manufactured thereby |
| CN104167469A (en) * | 2014-08-12 | 2014-11-26 | 华中科技大学 | Method for manufacturing SnS2/SnS heterojunction thin-film solar cell at a time |
| CN106006720A (en) * | 2016-05-30 | 2016-10-12 | 昆明理工大学 | Method for preparing SnS/SnS2 heterojunction material and application of SnS/SnS2 heterojunction material |
| CN108539175A (en) * | 2018-04-23 | 2018-09-14 | 中国计量大学 | A kind of molybdenum disulfide/stannic disulfide/graphene composite material and preparation method thereof |
| CN110047912A (en) * | 2019-05-24 | 2019-07-23 | 合肥本源量子计算科技有限责任公司 | A kind of vertical heterojunction material and chemical vapor deposition unit |
| CN111450813A (en) * | 2020-05-12 | 2020-07-28 | 陈艮 | SnS2-g-C3N4Heterojunction photocatalytic degradation material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| CHENG, YC ET AL.: ""Sulfur-Driven Transition from Vertical to Lateral Growth of 2D SnS-SnS2 Heterostructures and Their Band Alignments"", 《JOURNAL OF PHYSICAL CHEMISTRY C》 * |
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