CN117186462B - Polymer-based flexible film with oriented bridging structure, preparation and application - Google Patents
Polymer-based flexible film with oriented bridging structure, preparation and application Download PDFInfo
- Publication number
- CN117186462B CN117186462B CN202311474946.7A CN202311474946A CN117186462B CN 117186462 B CN117186462 B CN 117186462B CN 202311474946 A CN202311474946 A CN 202311474946A CN 117186462 B CN117186462 B CN 117186462B
- Authority
- CN
- China
- Prior art keywords
- polymer
- flexible film
- based flexible
- bridging structure
- dimensional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000002086 nanomaterial Substances 0.000 claims abstract description 25
- 239000002070 nanowire Substances 0.000 claims description 26
- 229910052714 tellurium Inorganic materials 0.000 claims description 23
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 23
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 22
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 22
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000010345 tape casting Methods 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 230000004044 response Effects 0.000 abstract description 7
- 230000005012 migration Effects 0.000 abstract description 4
- 238000013508 migration Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 230000036541 health Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 abstract description 2
- 238000007606 doctor blade method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002121 nanofiber Substances 0.000 description 3
- 239000002135 nanosheet Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal sulfur compound Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a polymer-based flexible film with an oriented bridging structure, and preparation and application thereof, and belongs to the technical field of flexible photoelectric materials. According to the invention, the polymer-based flexible film material containing the nano material orientation bridging is prepared through a solution doctor blade method, the bending stability of the film is enhanced by the orientation bridging structure, and a high-speed ordered carrier migration channel is formed in the film, so that the photoelectric detector containing the polymer-based flexible film has higher carrier migration rate, faster response time, better response sensitivity and detection rate, and therefore, the polymer-based flexible film and the corresponding photoelectric detector prepared by the invention have very wide application prospects in the fields of human health monitoring, flexible photoelectric imaging and the like.
Description
Technical Field
The invention belongs to the technical field of flexible photoelectric materials, and particularly relates to a polymer-based flexible film with an oriented bridging structure, and preparation and application thereof.
Background
The flexible photoelectric detector has wide application prospect in the fields of human health monitoring, portable optical devices, man-machine interaction, wearable visual sensing and the like. The commercial photoelectric detector mainly adopts a silicon photodiode, however, the inherent rigidity and fragility of the silicon material can not enable devices constructed by the silicon material to be well attached to human limbs, so that the accuracy of data is reduced, and the position of the wearable device on the body is limited. At present, the main strategy for preparing the flexible photoelectric detector is to transfer the photoelectric device to a flexible substrate with a special geometric structure (such as wave, snake shape and spring), but the method has the defects of complex process, poor structural reliability, insufficient deformation stability and the like.
The photoelectric semiconductor nano material is blended and filled into the polymer, and the performance of the photoelectric semiconductor material is further overlapped on the basis of keeping the intrinsic characteristics of the polymer, so that the method is a universal method for preparing the durable and stable flexible photoelectric detector. For example, zhang Ye blended black phosphorus with a polymer produced a flexible photodetector (adv. Funct. Mater. 2019, 29, 1906610) with a responsivity of 4.593 μ A W −1 The detection rate is 7.45 multiplied by 10 8 Jones; a stretchable photodetector (adv. Funct. Mater. 2021, 31, 2100136) was prepared by mixing graphene into polyionic liquid with a responsivity of 6.19 mA W −1 The detection rate was 0.33X10 9 Jones. However, in the reported system, two-dimensional semiconductor materials such as graphene, black phosphorus and the like are dispersed in a polymer in an unordered way, so that a transition energy barrier of carriers among semiconductor material domains is large, carrier mobility is low, and photoelectric performance is poor. Therefore, there is an urgent need to develop a high performanceA flexible photodetector.
Disclosure of Invention
Aiming at the problems of the existing polymer-based flexible photoelectric detector, the invention provides a polymer-based flexible film with an orientation bridging structure, and preparation and application thereof, and aims to obtain the polymer-based flexible photoelectric detector with high carrier mobility and photoelectric property by regulating and controlling the orientation distribution of two semiconductor nano materials in a polymer matrix to form compact bridging and constructing a high-speed ordered carrier migration channel.
The invention firstly provides a preparation method of a polymer-based flexible film with an oriented bridging structure, which comprises the following steps: (1) Mixing the double photoelectric semiconductor nano material with a polymer solution to prepare a mixed solution; (2) The mixed solution is coated on a horizontal substrate, and the polymer-based flexible film with an oriented bridge structure is prepared by a shear blade coating method.
According to one embodiment of the invention, the knife coating equipment used for the shear knife coating method is a knife coater, the included angle between a knife of the knife coater and a horizontal substrate is 30-90 degrees, the slit distance between the knife of the knife coater and the horizontal substrate is 0.05-0.2 cm, and the knife coating speed of the shear knife coating method is 0.5-2.5 mm/s.
According to one embodiment of the invention, the mixed solution comprises 5-20 parts by mass of the double photoelectric semiconductor nanomaterial and 80-95 parts by mass of the polymer solution.
According to one embodiment of the invention, the oriented bridging structure of the polymer-based flexible nano-film is an oriented bridging structure formed between two photoelectric semiconductor nanomaterials, wherein the two photoelectric semiconductor nanomaterials are one of one-dimensional nanomaterials and one-dimensional nanomaterials, one-dimensional nanomaterials and two-dimensional nanomaterials, two-dimensional nanomaterials and two-dimensional nanomaterials.
According to one embodiment of the invention, the one-dimensional nanomaterial is a photoelectric semiconductor nanowire or a nanofiber, the photoelectric semiconductor nanowire is one or more of a tellurium nanowire, a zinc oxide nanowire, a titanium dioxide nanowire and a perovskite nanowire, and the nanofiber is a poly-3-hexylthiophene nanofiber.
According to one embodiment of the invention, the two-dimensional nanomaterial is a two-dimensional optoelectronic semiconductor material that is a transition metal sulfur compound or black phosphorus.
According to one embodiment of the present invention, the polymer in the polymer solution is one of polyurethane, polyvinyl alcohol, and polyacrylonitrile.
According to another aspect of the present invention, there is also provided a polymer-based flexible film having an oriented bridge structure prepared using the above method.
According to another aspect of the present invention, there is also provided a photodetector comprising the above polymer-based flexible film having an oriented bridge structure.
In general, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
1. the invention realizes ordered orientation and compact bridging of the double photoelectric semiconductor nano material in the polymer by a shearing and knife coating method, and builds a high-speed ordered carrier migration channel in the polymer-based flexible film, and the preparation method is simple and suitable for large-scale preparation;
2. the responsivity of the flexible photoelectric detector containing the polymer-based flexible nano film can reach 11.32mA W at maximum −1 The highest detection rate can reach 1.12 multiplied by 10 10 Jones is remarkably higher than the prior literature report, and has wide application prospect in flexible imaging, human health monitoring and other aspects.
Drawings
Fig. 1 is a schematic diagram of a preparation process of the oriented bridged one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1.
Fig. 2 is an SEM cross-sectional view of the oriented bridged one-dimensional tellurium nanowires/two-dimensional molybdenum disulfide/polyvinyl alcohol film prepared in example 1.
FIG. 3 is an I-V plot of the oriented bridged one-dimensional tellurium nanowires/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1.
FIG. 4 is an I-t plot of the oriented bridged one-dimensional tellurium nanowires/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1.
Fig. 5 is a carrier mobility diagram of the oriented bridged one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol and the unordered distribution of one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1.
Fig. 6 is a graph of photo-response time, loudness, and detection rate contrast (optical power 2.13, mW, wavelength 532 nm) of the oriented bridged one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol and the unordered distribution of one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1.
FIG. 7I-t plot (optical power 2.13 mW, wavelength 532 nm) of the oriented bridged one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector prepared in example 1 at different bending angles.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1
Fig. 1 is a schematic view of a preparation process for preparing a polymer-based flexible film having an oriented bridge structure according to this embodiment. Firstly preparing a double photoelectric semiconductor nano material/polymer mixed solution, then preparing a polymer-based flexible film with an oriented bridging structure through a shearing blade coating method, wherein a blade coater is adopted by blade coating equipment, the angle between a scraper of the blade coater and a one-sided substrate is 30 degrees, the blade coating speed is 1 mm/s, and the slit distance is 0.05cm. The one-dimensional nano material is tellurium nano wires (Te NWs), and the dosage is 2 parts (mass parts); the two-dimensional nano material is a two-dimensional molybdenum nano sheet, and the dosage is 3 parts; the polymer solution used was a polyvinyl alcohol solution (solid content 8 wt%) in an amount of 95 parts by mass. Uniformly pouring the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol mixed solution in batches (2 milliliters each time) on a scraper of a blade coater, scraping and coating each batch of solution for 2 times by the scraper of the blade coater, and performing cyclic operation to obtain a one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible film; finally, printing conductive silver paste at two ends of the prepared film (the cutting size of the film is 2X 2 mm) as electrodes to construct the flexible photoelectric detector.
Example 2
Example 1 was repeated in the same manner as described except that the doctor blade was at an angle of 90℃to the substrate, the doctor blade speed was 1 mm/s, and the slit distance was 0.05cm.
Example 3
Example 1 was repeated in the same manner as described except that the doctor blade was at an angle of 30℃to the substrate, the doctor blade speed was 2.5mm/s, and the slit distance was 0.05cm.
Example 4
Example 1 was repeated in the same manner as described except that the doctor blade was at an angle of 30℃to the substrate, the doctor blade speed was 1 mm/s, and the slit distance was 0.2 cm.
Example 5
Example 1 was repeated with the same procedure described, except that zinc oxide nanowires were used as one-dimensional nanomaterial, black phosphorus nanoplatelets were used as two-dimensional nanomaterial, and polyurethane solution was used as the polymer solution.
Example 6
Example 5 was repeated in the same manner as described except that the doctor blade was at an angle of 60℃to the substrate, the doctor blade speed was 1 mm/s, and the slit distance was 0.05cm.
Analysis of experimental results
As can be observed from the cross-section SEM of fig. 2, the one-dimensional tellurium nanowires and the two-dimensional molybdenum disulfide nanosheets are in a 'brick-mud' -shaped alternate ordered arrangement structure in the polyvinyl alcohol matrix, and the one-dimensional tellurium nanowires with high length-diameter ratio are used as connecting bridges between the molybdenum disulfide nanosheets, so that the high-speed and ordered carrier transportation is facilitated.
As can be seen from the I-V curve of fig. 3, the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with an oriented bridging structure gradually increases with increasing optical power under the illumination of wavelength 532 nm.
From the I-t curve of fig. 4, it can be found that the photo-response time of the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with an oriented bridge structure is 0.78s.
As can be seen from the carrier mobility diagram in fig. 5, the carrier mobility of the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with the oriented bridging structure is improved by about 6 times compared with that of the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with unordered distribution, and one of the beneficial effects of the oriented bridging structure in the invention is proved to be that the carrier mobility is obviously improved.
As can be seen from FIG. 6, the response and detection rate of the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with the oriented bridge structure are respectively 11.32 mA/W and 1.12×1010Jones, while the response time, response and detection rate of the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with unordered distribution are respectively 3.32 s, 0.356 mA/W and 0.848×10 9 Jones, the photoelectric detector prepared by the invention has obvious performance advantages.
As can be seen from fig. 7, the one-dimensional tellurium nanowire/two-dimensional molybdenum disulfide/polyvinyl alcohol flexible photodetector with the oriented bridge structure can still maintain stable photodetection performance after 30 ° and 120 ° bending.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (3)
1. A method for preparing a polymer-based flexible film having an oriented bridging structure, comprising the steps of: (1) Mixing the double photoelectric semiconductor nano material with a polymer solution to prepare a mixed solution;
(2) Coating the mixed solution on a horizontal substrate, and preparing a polymer-based flexible film with an oriented bridging structure by a shear blade coating method;
the knife coating equipment adopted by the shearing knife coating method is a knife coating machine, the included angle between a scraper of the knife coating machine and a horizontal substrate is 30-90 degrees, the slit distance between the scraper of the knife coating machine and the horizontal substrate is 0.05-0.2 cm, and the knife coating speed of the shearing knife coating method is 0.5-2.5 mm/s;
the mixed solution is prepared from 5 parts by mass of double photoelectric semiconductor nano materials and 95 parts by mass of polymer solution, wherein the oriented bridging structure of the polymer-based flexible film is an oriented bridging structure formed between the double photoelectric semiconductor nano materials, the 5 parts by mass of double photoelectric semiconductor nano materials are 2 parts by mass of one-dimensional tellurium nano wires and 3 parts by mass of two-dimensional molybdenum disulfide, and the polymer in the polymer solution is polyvinyl alcohol.
2. A polymer-based flexible film having an oriented bridging structure prepared by the method of claim 1.
3. A photodetector comprising the polymer-based flexible film with oriented bridging structure of claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311474946.7A CN117186462B (en) | 2023-11-08 | 2023-11-08 | Polymer-based flexible film with oriented bridging structure, preparation and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311474946.7A CN117186462B (en) | 2023-11-08 | 2023-11-08 | Polymer-based flexible film with oriented bridging structure, preparation and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117186462A CN117186462A (en) | 2023-12-08 |
| CN117186462B true CN117186462B (en) | 2024-02-02 |
Family
ID=89003831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311474946.7A Active CN117186462B (en) | 2023-11-08 | 2023-11-08 | Polymer-based flexible film with oriented bridging structure, preparation and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117186462B (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035308A2 (en) * | 2007-09-13 | 2009-03-19 | Korea University Industrial & Academic Collaboration Foundation | Metal-polymer hybrid nanomaterials, method for preparing the same method for controlling optical property of the same and optoelectronic device using the same |
| CN103109391A (en) * | 2010-09-24 | 2013-05-15 | 加利福尼亚大学董事会 | Nanowire-polymer composite electrodes |
| CN104876179A (en) * | 2015-04-16 | 2015-09-02 | 华中科技大学 | Large-area assembling method for non-contact type one-dimensional nano material |
| CN106969860A (en) * | 2017-05-01 | 2017-07-21 | 苏州科技大学 | Intelligent Magnetic driving selfreparing flexible pressure-sensitive sensor and preparation method thereof |
| CN107342365A (en) * | 2017-06-26 | 2017-11-10 | 长江大学 | A kind of perovskite photodetector and preparation method thereof |
| CN111292874A (en) * | 2020-03-23 | 2020-06-16 | 智能容电(北京)科技有限公司 | High-conductivity yield electrode material and preparation method thereof |
| CN112930100A (en) * | 2021-01-20 | 2021-06-08 | 中国电子科技集团公司第三十三研究所 | Metal transparentized electromagnetic shielding material and preparation method thereof |
| CN113278948A (en) * | 2021-04-16 | 2021-08-20 | 中国计量大学 | Tin sulfide/tin disulfide heterojunction material and preparation method thereof |
| CN114497248A (en) * | 2021-12-08 | 2022-05-13 | 华南师范大学 | Photoelectric detector based on mixed-dimensional Sn-CdS/molybdenum telluride heterojunction and preparation method thereof |
| CN114958094A (en) * | 2022-06-09 | 2022-08-30 | 四川大学 | Water-based MXene nano cellulose-based functional ink and preparation method and application method thereof |
| CN115290230A (en) * | 2022-07-04 | 2022-11-04 | 安徽工程大学 | Full-fabric-based pressure and humidity sensor and preparation method thereof |
| CN115991947A (en) * | 2022-11-25 | 2023-04-21 | 东莞理工学院 | Layered bridging cross-linked heterostructure flexible nano coating and preparation method and application thereof |
| CN116314386A (en) * | 2022-12-05 | 2023-06-23 | 浙江芯科半导体有限公司 | Mixed-dimension van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN116768262A (en) * | 2023-06-15 | 2023-09-19 | 深圳大学 | SnO (tin oxide) 2 Se nanocomposite and preparation method and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200073688A (en) * | 2018-12-14 | 2020-06-24 | 한국과학기술원 | Flexible thin film transistor using two dimensional semicondoctor material |
-
2023
- 2023-11-08 CN CN202311474946.7A patent/CN117186462B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035308A2 (en) * | 2007-09-13 | 2009-03-19 | Korea University Industrial & Academic Collaboration Foundation | Metal-polymer hybrid nanomaterials, method for preparing the same method for controlling optical property of the same and optoelectronic device using the same |
| CN103109391A (en) * | 2010-09-24 | 2013-05-15 | 加利福尼亚大学董事会 | Nanowire-polymer composite electrodes |
| CN104876179A (en) * | 2015-04-16 | 2015-09-02 | 华中科技大学 | Large-area assembling method for non-contact type one-dimensional nano material |
| CN106969860A (en) * | 2017-05-01 | 2017-07-21 | 苏州科技大学 | Intelligent Magnetic driving selfreparing flexible pressure-sensitive sensor and preparation method thereof |
| CN107342365A (en) * | 2017-06-26 | 2017-11-10 | 长江大学 | A kind of perovskite photodetector and preparation method thereof |
| CN111292874A (en) * | 2020-03-23 | 2020-06-16 | 智能容电(北京)科技有限公司 | High-conductivity yield electrode material and preparation method thereof |
| CN112930100A (en) * | 2021-01-20 | 2021-06-08 | 中国电子科技集团公司第三十三研究所 | Metal transparentized electromagnetic shielding material and preparation method thereof |
| CN113278948A (en) * | 2021-04-16 | 2021-08-20 | 中国计量大学 | Tin sulfide/tin disulfide heterojunction material and preparation method thereof |
| CN114497248A (en) * | 2021-12-08 | 2022-05-13 | 华南师范大学 | Photoelectric detector based on mixed-dimensional Sn-CdS/molybdenum telluride heterojunction and preparation method thereof |
| CN114958094A (en) * | 2022-06-09 | 2022-08-30 | 四川大学 | Water-based MXene nano cellulose-based functional ink and preparation method and application method thereof |
| CN115290230A (en) * | 2022-07-04 | 2022-11-04 | 安徽工程大学 | Full-fabric-based pressure and humidity sensor and preparation method thereof |
| CN115991947A (en) * | 2022-11-25 | 2023-04-21 | 东莞理工学院 | Layered bridging cross-linked heterostructure flexible nano coating and preparation method and application thereof |
| CN116314386A (en) * | 2022-12-05 | 2023-06-23 | 浙江芯科半导体有限公司 | Mixed-dimension van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN116768262A (en) * | 2023-06-15 | 2023-09-19 | 深圳大学 | SnO (tin oxide) 2 Se nanocomposite and preparation method and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| Synthesis and characterization of Au-ZnO nanorods growth by CVD method;Mezher, SJ. et al.;《OPTICAL AND QUANTUM ELECTRONICS》;第55卷(第9期);466-483 * |
| 石墨烯银纳米线透明导电薄膜的制备进展;董明明;《有色金属材料与工程》;第20卷(第1期);51-57 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117186462A (en) | 2023-12-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | ZnO quantum dot decorated Zn2SnO4 nanowire heterojunction photodetectors with drastic performance enhancement and flexible ultraviolet image sensors | |
| Peng et al. | Synthesis and structures of morphology-controlled ZnO nano-and microcrystals | |
| Kung et al. | 20 μs photocurrent response from lithographically patterned nanocrystalline cadmium selenide nanowires | |
| Feng et al. | ⟨ 0001⟩-Preferential growth of CdSe nanowires on conducting glass: template-free electrodeposition and application in photovoltaics | |
| Yin et al. | High responsivity and external quantum efficiency photodetectors based on solution-processed Ni-doped CuO films | |
| Ladanov et al. | Structure and opto-electrochemical properties of ZnO nanowires grown on n-Si substrate | |
| Wang et al. | Inorganic–organic pn heterojunction nanotree arrays for a high-sensitivity diode humidity sensor | |
| Hwang et al. | High-efficiency, solid-state, dye-sensitized solar cells using hierarchically structured TiO2 nanofibers | |
| Ling et al. | A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode | |
| CN104807859B (en) | The method of low-temperature original position growth nanostructure metal oxide semiconductor and application | |
| Li et al. | ZnO quantum dot/MXene nanoflake hybrids for ultraviolet photodetectors | |
| Liu et al. | Valence-State Controllable Fabrication of Cu2–x O/Si Type-II Heterojunction for High-Performance Photodetectors | |
| Qian et al. | Architecture of CuS/PbS heterojunction semiconductor nanowire arrays for electrical switches and diodes | |
| CN105551810A (en) | Solvothermal preparation method for in-situ electrode | |
| Maiti et al. | Synthesis of a zinc oxide nanosheet–nanowire network complex by a low-temperature chemical route: Efficient UV detection and field emission property | |
| Yao et al. | Review on the properties of boron-doped diamond and one-dimensional-metal-oxide based PN heterojunction | |
| CN117186462B (en) | Polymer-based flexible film with oriented bridging structure, preparation and application | |
| Sarkar et al. | ZnO nanoparticles embedded silk fibroin—a piezoelectric composite for nanogenerator applications | |
| CN104828773B (en) | A kind of preparation method and purposes of polypyrrole/silver sulfuration silver nuclear shell structure nano line | |
| Kang et al. | High efficient photo detector by using ZnO nanowire arrays on highly aligned electrospun PVDF-TrFE nanofiber film | |
| Yahyaie et al. | Characterization of the electrical properties of individual p-Si microwire/polymer/n-Si microwire assemblies | |
| CN101824613B (en) | Method for growing zinc oxide nanowire array on zinc aluminum oxide conductive film | |
| Rahman et al. | Performance optimization of silicon-doped titanium dioxide and multiwalled carbon nanotubes tricomposite nanostructures for electrical and optical applications | |
| Das et al. | Effect of transition metal doping in the ZnO nanorod on the efficiency of the electron transport layer in semitransparent CsPbBr3 perovskite solar cells | |
| Yang et al. | Electron thermionic field emission and flow model of rapid-switching energy-saving electrochromic WO3/ZnO core-shell nanorod channels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |