CN110047912A - A kind of vertical heterojunction material and chemical vapor deposition unit - Google Patents
A kind of vertical heterojunction material and chemical vapor deposition unit Download PDFInfo
- Publication number
- CN110047912A CN110047912A CN201910438941.6A CN201910438941A CN110047912A CN 110047912 A CN110047912 A CN 110047912A CN 201910438941 A CN201910438941 A CN 201910438941A CN 110047912 A CN110047912 A CN 110047912A
- Authority
- CN
- China
- Prior art keywords
- cavity
- vapor deposition
- chemical vapor
- chamber body
- main chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 129
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 86
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 70
- 150000003624 transition metals Chemical class 0.000 claims abstract description 64
- 230000012010 growth Effects 0.000 claims abstract description 45
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 29
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 25
- 239000010439 graphite Substances 0.000 claims abstract description 25
- -1 graphite alkenes Chemical class 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims description 81
- 238000006243 chemical reaction Methods 0.000 claims description 70
- 239000007787 solid Substances 0.000 claims description 55
- 238000005234 chemical deposition Methods 0.000 claims description 54
- 229910021389 graphene Inorganic materials 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910052582 BN Inorganic materials 0.000 claims description 29
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 29
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 23
- 239000003054 catalyst Substances 0.000 claims description 23
- 239000005864 Sulphur Substances 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 239000011593 sulfur Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 8
- GRWZHXKQBITJKP-UHFFFAOYSA-L dithionite(2-) Chemical compound [O-]S(=O)S([O-])=O GRWZHXKQBITJKP-UHFFFAOYSA-L 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000011160 research Methods 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 113
- 239000000758 substrate Substances 0.000 description 31
- 239000012495 reaction gas Substances 0.000 description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 16
- 239000011669 selenium Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 238000005265 energy consumption Methods 0.000 description 8
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 7
- 229910052714 tellurium Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052798 chalcogen Inorganic materials 0.000 description 5
- 150000001787 chalcogens Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 150000003623 transition metal compounds Chemical class 0.000 description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 2
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- 229910003090 WSe2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
- H01L29/225—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to chemical vapor deposition fields, specifically disclosing a kind of vertical heterojunction material and chemical vapor deposition unit, disclosed vertical heterojunction material is the vertical heterojunction for at least double-layer structure being made of graphite alkenes material and two chalcogenide material of transition metal；Wherein, the graphite alkenes material and two chalcogenide material of the transition metal are all made of chemical vapour deposition technique preparation；The graphite alkenes material is the base material of two chalcogenide material of transition metal.Chemical vapor deposition unit provided by the invention can be realized the growth of the multi-heterostructure-layers comprising two chalkogenide of transition metal (TMDs), provide basis and support for the research of the multi-heterostructure-layers based on two chalkogenide of transition metal (TMDs).
Description
Technical field
The invention belongs to chemical vapor deposition field, especially a kind of vertical heterojunction material and chemical vapor deposition dress
It sets.
Background technique
CVD technology has become more and more important method, most typical example is just during growing two-dimensional material
It is CVD method growth graphene, boron nitride and two chalkogenide of transition metal (TMDs).The superpower electrical properties of graphene are
The confirmation of many experiments is obtained, but the characteristic of its zero band gap becomes the maximum obstruction that it is applied in terms of electronic device.
For boron nitride as class graphene-structured, lattice structure is similar with graphene, mismatch very little, and as smooth exhausted of atom level
Edge two-dimensional material, its surface is almost without dangling bonds, this is but also it becomes graphene and the ideal of other two-dimensional materials
Substrate and insulating layer.TMDs material is as brand-new material, chalcogen and transition metal composition can there are many multiplicity, so
It is the very big classification of family, and it has purposes in terms of optics, electricity more, but its electrical properties is by the shadow of the number of plies, substrate
It rings.The researching value of multi-heterostructure-layers based on two chalkogenide of transition metal (TMDs) is great.
Summary of the invention
The object of the present invention is to provide a kind of vertical heterojunction material and chemical vapor deposition units, to solve the prior art
In deficiency, it can be realized the growth of the multi-heterostructure-layers comprising two chalkogenide of transition metal (TMDs), for based on transition
The research of the multi-heterostructure-layers of metal dithionite race compound (TMDs) provides basis and support.
One aspect of the present invention provides a kind of vertical heterojunction material, and the vertical heterojunction material is by graphene
The vertical heterojunction of at least double-layer structure of class material and two chalcogenide material of transition metal composition；Wherein, the graphene
Class material and two chalcogenide material of the transition metal are all made of chemical vapour deposition technique preparation；The graphite alkenes material is
The base material of two chalcogenide material of transition metal.
Vertical heterojunction material as described above, wherein preferably, the graphite alkenes material be llowing group of materials it
One: graphene, boron nitride, the hetero-junctions formed by graphene and boron nitride.
Another aspect of the present invention provides a kind of chemical vapor deposition unit for growing above-mentioned vertical heterojunction material,
The chemical vapor deposition unit includes: the main cavity for being provided with chemical deposition reaction zone, is arranged at the chemical deposition reaction zone
Have for providing the first heater that chemical deposition reaction required temperature occurs to reaction gas；Gas source device, setting exist
Outside main chamber body, for providing the material for growing the graphite alkenes to the chemical deposition reaction zone；Secondary cavity, setting
It is golden to provide the growth transition to the chemical deposition reaction zone for holding simultaneously heating solid sources inside main chamber body
Belong to the material of two chalkogenides；It can be by controlling the on-off of the gas source device and the company of the secondary cavity and main chamber body
Understanding and considerate condition to obtain the graphite alkenes material by chemical deposition and obtains the transition metal by chemical deposition
The perpendicular heterojunction structure of two chalcogenide materials, and the graphite alkenes material is two chalkogenide of transition metal
The base material of material.
Chemical vapor deposition unit as described above, wherein preferably, the first heater includes setting perpendicular
The upward liftable upper heater relative to each other of histogram and liftable lower heater；The lower heater is towards on described
The side of heater is provided with the pallet for bearing basement material；The chemical deposition reaction zone is formed above the pallet.
Chemical vapor deposition unit as described above, wherein preferably, the liftable upper heater includes first
Motor shaft and primary heater；The first motor axis is mounted on the upper lid of main chamber body, and can be with respect to main chamber body
Top cover lifting；The primary heater is fixed at one end of the upper cover of the first motor axis far from main chamber body.
Chemical vapor deposition unit as described above, wherein preferably, the liftable lower heater includes second
Motor shaft and secondary heater；Second motor shaft is mounted on the bottom cover of main chamber body, and can be with respect to main chamber body
Bottom cover lifting；The secondary heater is fixed at one end of the bottom cover of second motor shaft far from main chamber body.
Chemical vapor deposition unit as described above, wherein preferably, the pair cavity includes first that sealing is connected
Secondary cavity and the second secondary cavity；Described first secondary cavity obtains gaseous state sulphur source for the solid-state sulphur source that holds and volatilize；Described second
Secondary cavity obtains gaseous transition source for the solid-state transition metal source that holds and volatilize；The described first intracorporal gas of secondary chamber
State sulphur source flows in the described second secondary cavity, and gives birth to the gaseous transition source effect generated in the described second secondary cavity
At two chalkogenide of gaseous transition, two chalkogenide of gaseous transition flows to the chemical deposition reaction zone and carries out
Chemical vapor deposition obtains two chalcogenide material of transition metal.
Chemical vapor deposition unit as described above, wherein preferably, be provided on the first secondary cavity first into
Port and the first gas outlet are provided with the second air inlet and the second gas outlet on the second secondary cavity；First air inlet
Place is sealedly connected with the first pipe of the first shut-off valve of band, and first gas outlet connects second air inlet by intermediate conduit
Mouthful, the second pipe of the second shut-off valve of band is sealedly connected at second gas outlet, the other end of the second pipe extends
To the chemical deposition reaction zone.
Chemical vapor deposition unit as described above, wherein preferably, the described first secondary cavity and the second secondary chamber
Body includes: seal cavity；Secondary heating mechanism is arranged in the seal cavity, for holding and heating corresponding solid-state
Source makes its volatilization.
Chemical vapor deposition unit as described above, wherein preferably, the secondary heating mechanism includes from inside to outside
Successively liner layer, heating element and the outer fixing layer of nested setting；The liner layer, which is formed, has open-topped the first container,
The first container is for holding corresponding Solid Source；The external side of the first container is arranged in heating element, for adding
The corresponding Solid Source of heat makes its volatilization.
Chemical vapor deposition unit as described above, wherein preferably, the secondary heating mechanism further includes galvanic couple member
Part；The galvanic couple element is arranged in the outer fixing layer, and is electrically connected the heating element, for measuring the heating element
Temperature.
Chemical vapor deposition unit as described above, wherein preferably, the chemical vapor deposition unit further includes hanging
Floating catalyst-assembly；The suspended catalyst device is used for anti-from chemical deposition described in the upper direction of the chemical deposition reaction zone
Area is answered to provide catalyst.
Chemical vapor deposition unit as described above, wherein preferably, the suspended catalyst device includes: support plate,
It which is provided with one or more for placing the perforation of catalyst；Third motor shaft, one end are fixedly connected with the support plate, the other end
It is rotatablely connected the upper cover of main chamber body.
Chemical vapor deposition unit as described above, wherein preferably, the chemical vapor deposition unit further includes taking out
Device of air；The air extractor connects main chamber body by the third pipeline with third shut-off valve, for main chamber body
Carrying out pumping makes main chamber body reach the first air pressure required for the growth graphite alkenes material.
Chemical vapor deposition unit as described above, wherein preferably, the chemical vapor deposition unit further includes filling
Device of air；The air charging system connects main chamber body by the 4th pipeline of the 4th shut-off valve of band, for main chamber body
Be inflated make main chamber body reach the second air pressure required for growth two chalcogenide material of transition metal, and/or
Reaction protection gas is provided into main chamber body.
Chemical vapor deposition unit as described above, wherein preferably, the chemical vapor deposition unit further includes gas
Pressure maintains device；The air pressure maintains device to connect main chamber body by the 5th pipeline of the 5th shut-off valve of band, for dimension
The intracorporal air pressure of main chamber is held equal to atmospheric pressure.
Compared with prior art, the dress of a kind of vertical heterojunction material and chemical vapor deposition hetero-junctions provided by the invention
It sets, it can be realized the growth of the multi-heterostructure-layers comprising two chalkogenide of transition metal (TMDs), for based on transition metal two
The research of the multi-heterostructure-layers of chalkogenide (TMDs) provides basis and support.Specifically, the above multilayer at least double-layer structure
Vertical heterojunction material, the number of plies for realizing hetero-junctions related to two chalkogenide of transition metal increase, and are the number of plies to transition gold
The performance for belonging to two chalkogenides influences research and provides the foundation.Furthermore by graphite alkenes as two chalcogenide of transition metal
The substrate of the chemical vapor deposition growth of object, influences research to the performance of two chalkogenide of transition metal for substrate and provides base
Plinth also ensure that electrical properties, the optical property of two chalkogenide of transition metal to a certain extent.
Detailed description of the invention
Fig. 1 is a direction structure schematic diagram of the cold wall chemical vapor deposition device that the embodiment of the application provides；
Fig. 2 is another direction structure signal for the cold wall chemical vapor deposition device that the embodiment of the application provides
Figure；
Fig. 3 is the structural schematic diagram of secondary cavity；
Fig. 4 is the concrete structure schematic diagram of the first secondary cavity；
Fig. 5 is the concrete structure schematic diagram of the second secondary cavity；
Description of symbols:
1- main cavity, 11- upper cover；
2- first heater, 21- upper heater, 211- first motor axis, 212- primary heater, 22- lower heater,
The second motor shaft of 221-, 222- secondary heater；
3- pair cavity, the first shut-off valve of 31-, the second shut-off valve of 32-, the secondary cavity of 33- first, the secondary cavity of 34- second, 331-
Seal cavity, 332- secondary heating mechanism, 3321- liner layer, 3322- heating element, the outer fixing layer of 3323-, 3324- galvanic couple member
Part；
4- suspended catalyst device, 41- support plate, 42- third motor shaft；
The first connecting hole of a-, the second connecting hole of b-, c- third connecting hole.
Specific embodiment
The embodiments described below with reference to the accompanying drawings are exemplary, for explaining only the invention, and cannot be construed to
Limitation of the present invention.
Two-dimentional two chalkogenide of transition metal (TMDs) has specific band gap and unique physical property, therefore in recent years
As most typical emerging two-dimensional material system.Two-dimentional two chalkogenide of transition metal is one group of material with chemical formula MX2,
Wherein M is metallic element, including Group IVB (titanium Ti, zirconium Zr, hafnium Hf), VB race (vanadium V, niobium Nb, tantalum Ta), VIB (molybdenum Mo, tungsten W etc.)
With IVA (tin Sn etc.), and X is chalcogen (sulphur S, selenium Se, tellurium Te).The metal chalcogenide compound studied in the world at present represents
Material is molybdenum disulfide MoS2, tungsten disulfide WS2, stannic disulfide SnS2, two selenizing molybdenum MoSe2, two tungsten selenide WSe2 etc..By not
The excellent photoelectric property of one-component can be inherited with hetero-junctions made of the few layer of two dimension, multilayer material longitudinal stack, it can also be with
Show unique device function.Strong covalent bond in every layer makes it have stability in plane, between layers with weaker
Van der Waals for is combined together.These artificial hetero-junctions have excellent optically and electrically performance, allow them to extensively
Using in optoelectronic devices: such as photodiode, photovoltaic cell and Light-emitting diode LED s.Due to two-dimensional semiconductor material
Material has excellent unique physical property, in following opto-electronic device, including transistor, optical detection, photoswitch and photovoltaic
There is immeasurable application prospect in the fields such as battery.They have important in following nanoelectronic and optoelectronic areas
Application value, therefore the growths preparation of the hetero-junctions as made of the few layers of different two dimensions, multilayer material longitudinal stacks and study at
For hot spot.
CVD technology has become more and more important method, most typical example is just during growing two-dimensional material
It is CVD method growth graphene, boron nitride and two chalkogenide of transition metal (TMDs).The superpower electrical properties of graphene are
The confirmation of many experiments is obtained, but the characteristic of its zero band gap becomes the maximum obstruction that it is applied in terms of electronic device.
For boron nitride as class graphene-structured, lattice structure is similar with graphene, mismatch very little, and as smooth exhausted of atom level
Edge two-dimensional material, its surface is almost without dangling bonds, this is but also it becomes graphene and the ideal of other two-dimensional materials
Substrate and insulating layer.TMDs material is as brand-new material, chalcogen and transition metal composition can there are many multiplicity, so
It is the very big classification of family.And it has purposes in terms of optics, electricity more, but its electrical properties is by the shadow of the number of plies, substrate
It rings.
The mainstream growth substrate of usual graphene and boron nitride is that metal, graphene and boron nitride are needed at 1000 degrees Celsius
Metal catalytic is wanted to reduce cracking energy, and TMDs material mainstream growth substrate is silicon wafer, there is no graphene and/or boron nitride
As the research of TMDs Material growth substrate, or being formed by graphene and/or boron nitride, TMDs includes at least the two of TMDs
The report of the vertical heterojunction of layer.However, it is possible to it is well established that if graphene, boron nitride and TMDs material are stacked up
As hetero-junctions, novel physical phenomenon can be generated in interface.
Around this original intention, present applicant analyze CVD method growth TMDs material, with CVD growth graphene and/
Or the difference that boron nitride has, discovery main difference concentrate on growth air pressure and presoma.Specifically, graphene and/or nitrogen
The presoma for changing boron is gas, and growth air pressure is vacuum pressure；And the presoma of TMDs material is solid, solid, which is heated, to be waved
It is dealt into the process of gas and during obtained gas carries out CVD growth, is required to normal pressure.But it is growing
The gas needs that its presoma heating volatilization obtains when TMDs material are transmitted to CVD reaction zone in several hundred degrees Celsius of high temperature.
Cold wall CVD is a novel CVD growth equipment that cooling equipment is arranged in CVD heating furnace periphery, due to cold wall
CVD is more advantageous to the stability and the growth conversion of later period industrial-scale of growth, and has relative to hot-wall cvd more flexible
It may modify, so cold wall system is the industrialized development trend of the following two-dimensional material.But in cold wall CVD, presoma supply dress
It installs outside CVD growth chamber, and often far from growth chamber, this point is unfavorable for growing TMDs using cold wall CVD
Realization；Meanwhile also increasing the design difficulty of cold wall system.Therefore, to two sulphur of graphene, boron nitride and transition metal
Race's compound (TMDs) three grows up to vertical structure hetero-junctions in situ, needs a kind of new equipment.
Embodiment 1:
The embodiment of the utility model provides a kind of cold wall chemical vapor deposition device, as depicted in figs. 1 and 2, the cold wall
Chemical vapor deposition unit includes: main cavity 1, the gas source device (not shown) being arranged in outside main chamber body 1 and setting
The secondary cavity 3 for serving as solid source device in main chamber body 1.
Wherein, it is provided with chemical deposition reaction zone in main cavity 1, is provided at the chemical deposition reaction zone for providing
The first heater 2 of required temperature is reacted in chemical deposition, and 1 periphery of main chamber body is provided with water-cooling system；Gas source device
It is gas first to reaction gas for providing presoma to the chemical deposition reaction zone；The pair cavity 3 is for heating
Solid Source is solid second to reaction gas to provide presoma to the chemical deposition reaction zone, serves as solid source to play
The effect of device.
Cold wall chemical vapor deposition device provided by the present application not only includes the main cavity for being provided with chemical deposition reaction zone
1, the gas source device outside main chamber body 1 is set, further includes the secondary cavity 3 being arranged in main chamber body 1, the pair
Cavity 3 is solid second to reaction gas to provide presoma to the chemical deposition reaction zone for heating solid sources.It should
In the process, because the pair cavity 3 is used for heating solid sources to provide presoma as solid to the chemical deposition reaction zone
Second to reaction gas, so secondary cavity 3 plays the role of solid-state source device.One provenance feedway is arranged the application
The spatial distribution for avoiding equipment existing for existing cold wall CVD in main cavity 1 to a certain extent is scattered, occupied space, inconvenience
In the defect and deficiency that minimize, be not easy to management.
In this process, the application is selective is only placed on solid-state source device inside main cavity 1, rather than and/or
Gas source device is placed on inside main cavity 1, is to have fully considered that solid-state source device is heavy to the chemistry in heating solid sources
Heat energy consumption, second needed for product reaction zone provides the second heating to the process of reaction gas that presoma is solid are wait react
Heat energy consumption needed for gas transport process and secondary cavity 3 carry out the energy consumption problem of gas bleed process.Specifically, working as
Solid-state source device is arranged inside main cavity 1, can be occurred to a certain extent using the heat power-assisted pair cavity 3 in main cavity 1
Solid Source heating process and second to reaction gas need high temperature transmission process, realize effective use of heat；
Furthermore solid-state source device is arranged inside main cavity 1, has shortened the second transmission path to reaction gas, has reduced second
To the transmission loss of reaction gas on the transmit path.In addition, main cavity 1 is at work, it is only necessary to be maintained inside secondary cavity 3 normal
Pressure need to be only placed in main cavity 1 at this time using secondary cavity 3 as an enclosed system, can't be to 1 band of main cavity
It adversely affects, and may be implemented solid-state source device facilitates heat preservation.In addition, when carrying out gas bleed cavity, it is only necessary to
Secondary cavity 3 is wanted to be connected to main cavity 1, the flushing of secondary cavity 3 can be realized in the gas for then rinsing main cavity 1, reduces gas consumption
And energy consumption.So secondary cavity 3 of the application in main chamber body 1 has the effect of achieving many things at one stroke.
During the work time, can be made by the on-off of the on-off and the solid source device that control the gas source device
Described first, which obtains the first material and described second by chemical deposition to reaction gas, passes through chemical deposition to reaction gas
Method obtains the perpendicular heterojunction structure of the second material, and first material is the base material of second material.
When specific setting, main cavity 1 and secondary cavity 3 are the airtight cavity of good airproof performance resistant to high temperature, simultaneously
In order to realize the placement of correlated parts inside 3 the two of main cavity 1 and secondary cavity, main cavity 1 and secondary cavity 3 is needed to be disposed as
The form that cover-type, i.e. chamber itself and lid mutually lid close, and sealing cover closes between chamber itself and lid.It is understood that
The chamber itself refers to that the open containers with cavity.
In addition, please continue to refer to shown in Fig. 1 and Fig. 2, the first heater 2 includes setting when specific setting
Set liftable upper heater 21 and liftable lower heater 22 relative to each other in the vertical direction；The lower heater
22 are provided with the pallet 23 for bearing basement material towards the side of the upper heater 21；Institute is formed above the pallet 23
State chemical deposition reaction zone.
The lower heater 22 and the upper heater 21 are used for the chemical vapor deposition reaction zone, i.e. lower heater
The region of 4 top of pallet, provides the growth temperature for being suitble to two-dimentional new material between 22 and upper heater 21.
In embodiment, lower heater 22 and upper heater 21 relative to each other liftable in the vertical direction is set
For two heaters of the certain distance that is separated from each other, the liftable of lower heater 22 and upper heater 21 for example can be by means of electricity
Arbor or other fixing pieces are realized.Underlying lower heater 22 for example for directly heating substrate, be located above upper plus
Thus hot device 21 provides in chemical vapor deposition reaction zone and is suitble to wait make for example for directly heating substrate and/or catalyst
The temperature of standby two dimension new material.Such as graphene and/or graphene hetero-junctions are 900~1200 DEG C in the temperature of grown on substrates
In the range of.It is provided with pallet 4 on underlying 22 surface of lower heater, is used to place substrate.Illustratively, substrate can
Think that silicon wafer or surface have the substrate etc. of hexagonal boron nitride coating.
Specifically, the liftable upper heater 21 includes first motor axis 211 please continue to refer to shown in Fig. 1 and Fig. 2
With primary heater 212；The first motor axis 211 is mounted in the upper cover 11 of main chamber body 1, and can be with respect to main chamber
The upper cover 11 of body 1 is gone up and down；The primary heater 212 is fixed at the first motor axis 211 far from main chamber body 1
One end of upper cover 11.
Specifically, the liftable lower heater 22 includes the second motor shaft 221 and secondary heater 222；Described
Two motor shafts 221 are mounted on the bottom cover of main chamber body 1, and can be gone up and down with respect to the bottom cover of main chamber body 1；Described second adds
Hot device 222 is fixed at one end of the bottom cover of the second motor shaft 221 far from main chamber body 1.
It is provided on the pair cavity 3 as the optimal technical scheme of the present embodiment please continue to refer to shown in Fig. 1 and Fig. 2
Air inlet and air outlet；The first pipe of the first shut-off valve of band 31 is sealedly connected at the air inlet, the first pipe
The other end can extend main cavity 1 and connect air charging system or hanging etc..It can by the first pipe of the first shut-off valve of band 31
One of protection gas, assisted reaction gas, driving gas, flushing gas etc. or a combination thereof are poured in secondary cavity 3 to realize.Described second
The second pipe of the second shut-off valve of band 32 is sealedly connected at gas outlet, the other end of the second pipe extends to the chemistry
Deposition reaction area, for by Solid Source be heated volatilization obtain be transmitted to chemical deposition reaction zone to reaction gas.
It should be noted that assisted reaction gas described in the present embodiment, which refers to, eliminates the gaseous state that Solid Source heating volatilization obtains
The gas of impurity in substance, driving gas described in the present embodiment are the gas that drives Solid Source heating volatilization to generate from secondary cavity 3
The gas of main cavity 1 is flowed to, protection gas and flushing gas can be interpreted as the gas for protecting reaction respectively according to literal meaning
With the gas for rinsing cavity.Above each gas type, which can according to need, to be configured, and the present embodiment is not particularly limited.
In addition, it is necessary to explanation, to realize the transmission in second pipe to reaction gas toward chemical deposition reaction zone
It controls, is provided with the second shut-off valve 32 on second pipe.In order to realize the control to the second shut-off valve 32 being located in main cavity 1
System, it is solenoid electric valve or butterfly valve or by by the make-and-break control switch of the second shut-off valve 32 that the second shut-off valve 32, which can be set,
It guides to outside main cavity 1 and control is facilitated to the second shut-off valve 32 to realize.
It, can be according to the type setting for forming the Solid Source to the growth gasses secondary cavity 3 when specific implementation
The sub- cavity 33 being connected including one or at least two.Specifically, when forming the type of the Solid Source to growth gasses only
When having a kind of, then the secondary cavity 3 is set and only includes a sub- cavity 33.And works as and form the Solid Source to growth gasses
When type includes two or more, then the secondary cavity 3 is set and only includes sub- cavity 33 that at least two are connected i.e.
It can.
To two chalkogenide of transition metal (TMDs) of the present embodiment pregrown, two sub- cavitys 33 being connected are needed,
First secondary cavity 33 and the second secondary cavity 34 i.e. shown in Fig. 3, are respectively used to heating volatilization sulfur family Solid Source and transition metal are solid
State source and.Transition metal element includes Group IVB (titanium Ti, zirconium Zr, hafnium Hf), VB race (vanadium V, niobium Nb, tantalum Ta), VIB (molybdenum Mo, tungsten W
Deng) and IVA (tin Sn etc.), and chalcogen includes sulphur S, selenium Se, tellurium Te etc., thus common transition metal Solid Source include but
It is not limited to tungstic acid, molybdenum trioxide, common sulfur family Solid Source includes but is not limited to solid-state tellurium, solid-state sulphur, solid-state selenium etc..
As shown in Figure 4 and Figure 5, above-described sub- cavity 33 includes seal cavity 331 and secondary heating mechanism 332, the
Two heating devices 332 are arranged in the seal cavity 331, make its volatilization for holding and heating the Solid Source placed in it.
It should be noted that every kind of Solid Source is placed on one when two sub- two kinds of Solid Sources of the heating of cavitys 33 are arranged
In sub- cavity 33, the temperature of every sub- cavity 33 is arranged according to the volatilization point of the Solid Source for the volatilization to be heated being arranged inside.Two
Air flow direction between a sub- cavity 33 is the gas of the high volatilization point of gas flow of low volatilization point, then common to flow to chemical gas
Phase deposition reaction area.
Solid-state transition metal and solid-state sulfur family in conjunction with needed for TMDs are described as follows:
Transition metal Solid Source tungstic acid, molybdenum trioxide volatilization point be 750 DEG C to 850 DEG C, preferably 800 DEG C.Solid-state
Tellurium, solid-state sulphur, solid-state selenium volatilization point be 500 DEG C to 600 DEG C, preferably 550 DEG C.So at this point, solid-state sulphur source be placed on from
In the sub- cavity 33 of chemical vapor deposition reaction zone relatively far away from, it is denoted as the first secondary cavity 33.And solid-state transition metal compound
Object is placed in the sub- cavity 33 from chemical vapor deposition reaction zone relative close, is denoted as the second secondary cavity 34.First secondary cavity
33 heating temperature is set as 500 DEG C to 600 DEG C, preferably 550 DEG C, can measure and monitor by electroheat pair.Second secondary cavity
34 heating temperature is set as 750 DEG C to 850 DEG C, preferably 800 DEG C, can measure and monitor by electroheat pair.First secondary cavity
The secondary cavity 34 of sulphur source gas flow second that 33 heating volatilizations obtain, and the transition obtained with heating volatilization in the second secondary cavity 34
Metal compound gas combines and flows to chemical vapor deposition reaction zone jointly.
As the optimal technical scheme of the present embodiment, please continue to refer to shown in Fig. 4 and Fig. 5, the secondary heating mechanism 332
Including liner layer 3321, heating element 3322 and the outer fixing layer 3323 that successively nesting is arranged from inside to outside；The liner layer
3321 form with open-topped the first container, and the first container is for holding Solid Source；The setting of heating element 3322 exists
The external side of the first container makes its volatilization for heating solid sources.The galvanic couple element setting used by above exists
In the outer fixing layer, and it is electrically connected the heating element, for measuring the temperature of the heating element.
As the optimal technical scheme of the present embodiment, please continue to refer to shown in Fig. 1 and Fig. 2, the cold wall chemical vapor deposition
Product device further includes suspended catalyst device 4；The suspended catalyst device 4 is arranged above the chemical deposition reaction zone,
For providing catalyst to the chemical deposition reaction zone.
When specific implementation, the suspended catalyst device 4 includes support plate 41 and third motor shaft 42.On support plate 41
Equipped with one or more for placing the perforation of catalyst；One end of third motor shaft 42 is fixedly connected with the support plate 41, another
The upper cover 11 of end rotation connection main chamber body 1.
As the optimal technical scheme of the present embodiment, the cold wall chemical vapor deposition device further include air extractor (not
Diagram)；The air extractor connects main chamber body 1 by the third pipeline with third shut-off valve, for cutting in the third
Carrying out pumping to main chamber body 1 when only valve is opened makes air pressure in main chamber body 1 reach described first to reaction gas generation
First air pressure required for reacting.
When specific implementation, air extractor can be using mechanical pump, molecular pump etc.；In view of growth graphene and/
Or the air pressure environment needed in the practical application scene of boron nitride is vacuum, so air extractor can preferably fast implement vacuum
The molecular pump of air pressure environment.
As the optimal technical scheme of the present embodiment, the cold wall chemical vapor deposition device further include air charging system (not
Diagram)；The air charging system connects main chamber body 1 by the 4th pipeline of the 4th shut-off valve of band, at described 4th section
Being inflated when only valve is opened to main chamber body 1 makes air pressure in main chamber body 1 reach described second to reaction gas generation
Second air pressure required for reacting, and/or the offer reaction protection gas into main chamber body 1.
It is understood that the air charging system, that is, common compressed air source unit, it is including but not limited to common in be provided with
Gas source and top are provided with the gas cylinder structure of pressure valve.The type of gas source, which can according to need, to be configured, such as protection
The gas of gas can preferred argon gas.
As the optimal technical scheme of the present embodiment, described device further includes that air pressure maintains device (not shown)；The gas
Pressure maintains device to connect main chamber body 1 by the 5th pipeline of the 5th shut-off valve of band, for opening in the 5th shut-off valve
When maintain main chamber body 1 in air pressure be equal to atmospheric pressure.
When specific implementation, device can be maintained as air pressure using fluid-tight bottle, i.e., a liquid is set outside main cavity 1
Bottle is sealed, one end of the 5th pipeline is protruded into the liquid inside fluid-tight bottle, and the other end of the 5th pipeline is connected to main cavity 1, the 5th pipe
The 5th shut-off valve is provided on road.
By means of the air extractor of the third pipeline connection main chamber body 1 with third shut-off valve, pass through the 4th section of band
Described in only the air charging system of the 4th pipeline connection main chamber body 1 of valve is connected with the 5th pipeline by the 5th shut-off valve of band
The air pressure of main cavity 1 maintains device, and the change of the air pressure environment in main cavity 1 may be implemented, different to meet in main cavity 1
The demand of air pressure environment.
It should be noted that although gas source device, the air extractor, the air charging system and the gas described above
Though pressure maintains device not shown, these devices can pass through the first connecting hole a preset on main cavity 1, the second connection
Hole b, third connecting hole c connection main chamber body, gas source device, air extractor, air charging system and air pressure maintain device
It is used cooperatively relationship between the first connecting hole a, the second connecting hole b, third connecting hole c three, can according to need progress
Facility is not specifically limited herein.
Embodiment 2:
The present embodiment provides a kind of vertical heterojunction material, the vertical heterojunction material is by graphite alkenes material and mistake
Cross the vertical heterojunction of at least double-layer structure of metal dithionite race compound material composition；Wherein, the graphite alkenes material and institute
It states two chalcogenide material of transition metal and is all made of chemical vapour deposition technique preparation；The graphite alkenes material is the transition gold
Belong to the base material of two chalcogenide materials.
The graphite alkenes material is one of llowing group of materials: graphene, boron nitride, formed by graphene and boron nitride it is different
Matter knot.
Vertical heterojunction material provided in this embodiment can be double-layer structure, such as: two sulfur family of graphene-transition metal
Compound hetero-junctions, two chalkogenide hetero-junctions of boron nitride-transition metal；It may be three-decker, such as: graphene-transition
Metal dithionite race compound hetero-junctions-graphene, two chalkogenide hetero-junctions of graphene-transition metal-boron nitride, boron nitride-mistake
Cross metal dithionite race compound hetero-junctions-boron nitride, two chalkogenide hetero-junctions of boron nitride-transition metal-graphene, graphene-
Two chalkogenide hetero-junctions of boron nitride-transition metal, two chalkogenide hetero-junctions of boron nitride-graphene-transition metal；It can also be with
For four-layer structure even more multilayered structure, do not enumerate one by one herein.
The vertical heterojunction material of the above multilayer at least double-layer structure realizes related to two chalkogenide of transition metal different
The number of plies of matter knot increases, and influences research to the performance of two chalkogenide of transition metal for the number of plies and provides the foundation.Furthermore by
The substrate that graphite alkenes are grown up as the chemical vapor deposition of two chalkogenide of transition metal is substrate to two sulfur family of transition metal
The performance of compound influences research and provides the foundation, also ensure that a certain extent two chalkogenide of transition metal electrical properties,
Optical property.
Embodiment 3:
A kind of chemical vapor deposition unit for growing the vertical heterojunction material is present embodiments provided, such as Fig. 1 and Fig. 2
Shown, the chemical vapor deposition unit not only includes the main cavity 1 for being provided with chemical deposition reaction zone, is arranged in main chamber
Gas source device (not shown) outside body 1 further includes the secondary cavity 3 being arranged in main chamber body 1.Wherein: the chemistry
It is provided at deposition reaction area for providing the first heater 2 that chemical deposition reaction required temperature occurs to reaction gas；
The gas source device is arranged outside main chamber body 1, grows the graphite for providing to the chemical deposition reaction zone
The material of alkenes；The pair cavity 3 is arranged inside main chamber body 1, for holding and heating solid sources are with to the chemistry
Deposition reaction area provides the material for growing two chalkogenide of transition metal；The on-off of the control gas source device can be passed through
With the connection situation of the secondary cavity 3 and main chamber body 1 to obtain by chemical deposition the graphite alkenes material with
The perpendicular heterojunction structure of two chalcogenide material of transition metal, and the graphene are obtained by chemical deposition
Class material is the base material of two chalcogenide material of transition metal.
During being somebody's turn to do, because the pair cavity 3 is used to hold and heating solid sources to the chemical deposition reaction zone to mention
For growing the material of two chalkogenide of transition metal, so secondary cavity 3 plays the role of solid-state source device.The present embodiment
One provenance feedway is arranged in main cavity 1, avoids the space of equipment existing for existing cold wall CVD to a certain extent
It is distributed scattered, occupied space, is not easy to minimize, be not easy to the defect and deficiency of management.
Meanwhile in this process, the present embodiment is selective is only placed on solid-state source device inside main cavity 1, without
It is and/or gas source device is placed on inside main cavity 1, is to have fully considered solid-state source device in heating solid sources with to institute
Needed for the heating for stating the process that chemical deposition reaction zone provides the two chalcogenide material gas of transition metal that presoma is solid
Heat energy consumption, heat energy consumption needed for two chalcogenide material gas transport process of transition metal and secondary cavity 3 carry out gas
The energy consumption problem of body flushing process.Specifically, when solid-state source device is arranged inside main cavity 1, it can be sharp to a certain extent
The two chalcogenide material gas of Solid Source heating process and transition metal occurred with the heat power-assisted pair cavity 3 in main cavity 1
The process for the high temperature transmission that body needs, realizes effective use of heat；Furthermore solid-state source device is arranged in main cavity 1
Portion has shortened the transmission path of two chalcogenide material gas of transition metal, reduces two chalcogenide material gas of transition metal
The transmission loss of body on the transmit path.In addition, main cavity 1 is at work, it is only necessary to normal pressure is maintained inside secondary cavity 3,
It need to be only placed in main cavity 1 using secondary cavity 3 as an enclosed system at this time, it is unfavorable to bring to main cavity 1
It influences.In addition, when carrying out gas bleed cavity, it is only necessary to which secondary cavity 3 is connected to main cavity 1, then rinses main cavity 1
Gas the flushing of secondary cavity 3 can be realized, reduce gas consumption and energy consumption.So pair of the present embodiment in main chamber body 1
Cavity 3 has the effect of achieving many things at one stroke.
When specific setting, main cavity 1 and secondary cavity 3 are the airtight cavity of good airproof performance resistant to high temperature, simultaneously
In order to realize the placement of correlated parts inside 3 the two of main cavity 1 and secondary cavity, main cavity 1 and secondary cavity 3 is needed to be disposed as
The form that cover-type, i.e. chamber itself and lid mutually lid close, and sealing cover closes between chamber itself and lid.It is understood that
The chamber itself refers to that the open containers with cavity.
In addition, please continue to refer to shown in Fig. 1 and Fig. 2, the first heater 2 includes setting when specific setting
Set liftable upper heater 21 and liftable lower heater 22 relative to each other in the vertical direction；The lower heater
22 are provided with the pallet 23 for bearing basement material towards the side of the upper heater 21；Institute is formed above the pallet 23
State chemical deposition reaction zone.
The lower heater 22 and the upper heater 21 are used for the chemical vapor deposition reaction zone, i.e. lower heater
The region of 4 top of pallet, provides the growth temperature for being suitble to two-dimentional new material between 22 and upper heater 21.
In embodiment, lower heater 22 and upper heater 21 relative to each other liftable in the vertical direction is set
For two heaters of the certain distance that is separated from each other, the liftable of lower heater 22 and upper heater 21 for example can be by means of electricity
Arbor or other fixing pieces are realized.Underlying lower heater 22 for example for directly heating substrate, be located above upper plus
Hot device 21 provides the temperature for being suitble to two-dimentional new material to be prepared for directly heating substrate, thus in chemical vapor deposition reaction zone
Degree, such as graphene and/or graphene hetero-junctions are in the range of the temperature of grown on substrates is 900~1200 DEG C.Under being located at
It is provided with pallet 4 on 22 surface of lower heater of side, is used to place substrate.Illustratively, substrate can be silicon wafer or surface
There is the substrate etc. of hexagonal boron nitride coating.
Specifically, the liftable upper heater 21 includes first motor axis 211 please continue to refer to shown in Fig. 1 and Fig. 2
With primary heater 212；The first motor axis 211 is mounted in the upper cover 11 of main chamber body 1, and can be with respect to main chamber
The upper cover 11 of body 1 is gone up and down；The primary heater 212 is fixed at the first motor axis 211 far from main chamber body 1
One end of upper cover 11.
Specifically, the liftable lower heater 22 includes the second motor shaft 221 and secondary heater 222；Described
Two motor shafts 221 are mounted on the bottom cover of main chamber body 1, and can be gone up and down with respect to the bottom cover of main chamber body 1；Described second adds
Hot device 222 is fixed at one end of the bottom cover of the second motor shaft 221 far from main chamber body 1.
It as the optimal technical scheme of the present embodiment, please refers to shown in Fig. 1, Fig. 2 and Fig. 3, the pair cavity 3 includes sealing
The secondary cavity 33 of connected first and the second secondary cavity 34；Described first secondary cavity 33 obtains gas for the solid-state sulphur source that holds and volatilize
State sulphur source；Described second secondary cavity 34 obtains gaseous transition source for the solid-state transition metal source that holds and volatilize；Described
The gaseous sulfur source stream in one secondary cavity 33 into the described second secondary cavity 34, and with generate in the described second secondary cavity 34
The gaseous transition source effect generates two chalkogenide of gaseous transition, the two chalcogenide logistics of gaseous transition
Chemical vapor deposition, which is carried out, to the chemical deposition reaction zone obtains two chalcogenide material of transition metal.It needs to illustrate
Be, the above sealing be connected refer to connecting pipe between the first secondary cavity 33 and the second secondary cavity 34 and external pressure it
Between be sealing.
It should be noted that transition metal element includes Group IVB (titanium Ti, zirconium Zr, hafnium Hf), VB race (vanadium V, niobium Nb, tantalum
Ta), VIB (molybdenum Mo, tungsten W etc.) and IVA (tin Sn etc.), and chalcogen includes sulphur S, selenium Se, tellurium Te etc., so common transition
Metal Solid Source includes but is not limited to tungstic acid, molybdenum trioxide, and common sulfur family Solid Source includes but is not limited to solid-state tellurium, consolidates
State sulphur, solid-state selenium etc..
Further, it please refers to shown in Fig. 3, is provided with the first air inlet and the first outlet on the described first secondary cavity 33
Mouthful, the described second secondary cavity 34 is provided with the second air inlet and the second gas outlet；Band is sealedly connected at first air inlet
The first pipe of first shut-off valve 31, the other end of the first pipe can extend main cavity 1 connect air charging system or
It is hanging etc..By the first pipe of the first shut-off valve of band 31 may be implemented to pour in secondary cavity 3 protection gas, assisted reaction gas,
One of drive gas, rinse gas etc. or a combination thereof.First gas outlet connects second air inlet, institute by intermediate conduit
The second pipe that the second shut-off valve of band 32 is sealedly connected at the second gas outlet is stated, the other end of the second pipe extends to institute
Chemical deposition reaction zone is stated, for Solid Source to be heated the two chalcogenide material gas of transition metal to be reacted that volatilization obtains
Body is transmitted to chemical deposition reaction zone.
It should be noted that assisted reaction gas described in the present embodiment, which refers to, eliminates the gaseous state that Solid Source heating volatilization obtains
The gas of impurity in substance, driving gas described in the present embodiment are the gas that drives Solid Source heating volatilization to generate from secondary cavity 3
The gas of main cavity 1 is flowed to, protection gas and flushing gas can be interpreted as the gas for protecting reaction respectively according to literal meaning
With the gas for rinsing secondary cavity 3.Above each gas type, which can according to need, to be configured, and the present embodiment does not do specific limit
System.
In addition, it is necessary to explanation, to realize the transmission in second pipe to reaction gas toward chemical deposition reaction zone
It controls, is provided with the second shut-off valve 32 on second pipe.In order to realize the control to the second shut-off valve 32 being located in main cavity 1
System, it is solenoid electric valve or butterfly valve or by by the make-and-break control switch of the second shut-off valve 32 that the second shut-off valve 32, which can be set,
Guidance facilitates control to the second shut-off valve 32 to realize to main cavity 1 is outer.
It as the preferred embodiment of the present embodiment, please refers to shown in Fig. 4 and Fig. 5, the described first secondary cavity 33 and described second
Secondary cavity 34 includes seal cavity 331 and secondary heating mechanism 332, and secondary heating mechanism 332 is arranged in the seal cavity
In 331, make its volatilization for holding and heating corresponding Solid Source.
It should be noted that the operating temperature in 34 the two of the described first secondary cavity 33 and the second secondary cavity needs root
It is determined according to the volatilization point for the Solid Source being arranged inside.Specifically, the volatilization point of solid-state transition metal tungstic acid, molybdenum trioxide is
750 DEG C to 850 DEG C, preferably 800 DEG C.Solid-state tellurium, solid-state sulphur, solid-state selenium volatilization point be 500 DEG C to 600 DEG C, preferably 550 DEG C.
So the heating temperature of the first secondary cavity 33 is set as 500 DEG C to 600 DEG C, preferably 550 DEG C, can be measured simultaneously by electroheat pair
Monitoring.The heating temperature of described second secondary cavity 34 is set as 750 DEG C to 850 DEG C, preferably 800 DEG C, can be surveyed by electroheat pair
It measures and monitors.And in the discharge of spatial position, the distance of the described second opposite chemical vapor deposition reaction zone of secondary cavity 34 wants small
Distance in the described first opposite chemical vapor deposition reaction zone of secondary cavity 33.The sulphur that heating volatilization obtains in first secondary cavity 33
Source gas flows in the described second secondary cavity 34, and the transition metal compound obtained with heating volatilization in the described second secondary cavity 34
Object gas combines and flows to chemical vapor deposition reaction zone jointly.The galvanic couple element used by above is arranged described outer solid
In given layer, and it is electrically connected the heating element, for measuring the temperature of the heating element.
It as the optimal technical scheme of the present embodiment, please refers to shown in Fig. 4 and Fig. 5, the secondary heating mechanism 332 includes
Liner layer 3321, heating element 3322 and outer fixing layer 3323 that successively nesting is arranged from inside to outside；3321 shape of liner layer
At with open-topped the first container, the first container is for holding corresponding Solid Source；The setting of heating element 3322 exists
The external side of the first container makes its volatilization for heating corresponding Solid Source.
As the optimal technical scheme of the present embodiment, the secondary heating mechanism further includes galvanic couple element 3324；The electricity
Even element 3324 is arranged in the outer fixing layer 3323, and is electrically connected the heating element 3322, for measuring the heating
The temperature of element 3322.
As the optimal technical scheme of the present embodiment, please continue to refer to shown in Fig. 1 and Fig. 2, the chemical vapor deposition is filled
Setting further includes suspended catalyst device 4；The suspended catalyst device 4 is used for the upper direction institute from the chemical deposition reaction zone
It states chemical deposition reaction zone and catalyst is provided.
When specific implementation, the suspended catalyst device 4 includes support plate 41 and third motor shaft 42.On support plate 41
Equipped with one or more for placing the perforation of catalyst；One end of third motor shaft 42 is fixedly connected with the support plate 41, another
The upper cover 11 of end rotation connection main chamber body 1.
As the optimal technical scheme of the present embodiment, the chemical vapor deposition unit further includes that air extractor (is not schemed
Show)；The air extractor connects main chamber body 1 by third pipeline with third shut-off valve, for main chamber body 1 into
Row pumping makes main chamber body 1 reach the first air pressure required for the growth graphite alkenes material.
When specific implementation, air extractor can be using mechanical pump, molecular pump etc.；In view of growth graphene and/
Or the air pressure environment needed in the practical application scene of boron nitride is vacuum, so air extractor can preferably fast implement vacuum
The molecular pump of air pressure environment.
As the optimal technical scheme of the present embodiment, the chemical vapor deposition unit further includes that air charging system (is not schemed
Show)；The air charging system connects main chamber body 1 by the 4th pipeline of the 4th shut-off valve of band, for main chamber body 1 into
Row inflation make main chamber body 1 reach the second air pressure required for growth two chalcogenide material of transition metal, and/or to
Reaction protection gas is provided in main chamber body 1.
It is understood that the air charging system, that is, common compressed air source unit, it is including but not limited to common in be provided with
Gas source and top are provided with the gas cylinder structure of pressure valve.The type of gas source, which can according to need, to be configured, such as protection
Gas gas can preferred argon gas.
As the optimal technical scheme of the present embodiment, the chemical vapor deposition unit further includes that air pressure maintains device (not
Diagram)；Air pressure maintains device to connect main chamber body 1 by the 5th pipeline of the 5th shut-off valve of band, for the maintenance master
Air pressure in cavity 1 is equal to atmospheric pressure.
When specific implementation, device can be maintained as air pressure using fluid-tight bottle, i.e., a liquid is set outside main cavity 1
Bottle is sealed, one end of the 5th pipeline is protruded into the liquid inside fluid-tight bottle, and the other end of the 5th pipeline is connected to main cavity 1, the 5th pipe
The 5th shut-off valve is provided on road.
By means of the air extractor of the third pipeline connection main chamber body 1 with third shut-off valve, pass through the 4th section of band
Described in only the air charging system of the 4th pipeline connection main chamber body 1 of valve is connected with the 5th pipeline by the 5th shut-off valve of band
The air pressure of main cavity 1 maintains device, and the change of the air pressure environment in main cavity 1 may be implemented, different in main cavity to meet
The demand of air pressure environment.
It should be noted that although gas source device, the air extractor, the air charging system and the gas described above
Pressure maintains device not shown, but these devices can pass through the preset first connecting hole a of main cavity 1, the second connecting hole b, the
Three connecting hole c connection main chamber bodies, gas source device, air extractor, air charging system and air pressure maintain device and first
Connecting hole a, the second connecting hole b, relationship is used cooperatively between third connecting hole c three, can according to need carry out facility,
This is not specifically limited.
Embodiment 4:
The present embodiment provides a kind of methods using above mentioned chemical vapor deposition unit growth matter knot, specifically to borrow
Help chemical vapor deposition unit growing boron nitride described in embodiment 3-four layers of graphene-TMDs- boron nitride hetero-junctions in situ
Method is described below:
Step 1: the upper cover 11 of main cavity 1 is opened under atmospheric pressure, with the substrate on tray 4；And open secondary cavity 3
Upper cover, configure the Solid Source of secondary cavity 3.
Specifically, can first to entire cavity, (including main cavity 1 and/or the secondary cavity 3 be inflated, its air pressure inside is made
Reach atmospheric pressure), the upper cover 11 of main cavity 1 is then opened, and pass through mobile upper heater 21 and suspended catalyst device 4,
So that 4 top indwelling of pallet has space, then by the space, toward pallet 4 on place substrate, realize that the substrate on pallet 4 is matched
It sets.The type of substrate, which can according to need, to be configured, and can be metallic substrates, silicon material substrate etc..The preferred nitrogen of the present embodiment
Change the mainstream growth substrates metal substrate of boron.
The upper cover for opening secondary cavity 3, the detailed process for configuring the Solid Source of secondary cavity 3 can be described as: it is secondary to open first
The upper cover of cavity 33 places solid-state sulfur family substance in the secondary heating mechanism of the first secondary cavity 33, including but not limited to
Then solid tellurium powder seals the first secondary cavity 33；: the upper cover of the second secondary cavity 34 is opened, toward described the of the second secondary cavity 34
Solid-state transition metal oxide, including but not limited to tungstic acid are placed in two heating devices, then seal the second secondary cavity 34.
Step 2: sealing cover closes main chamber body 1 and the secondary cavity 3, and ensure that main cavity 1 is connected to secondary cavity 3.
Specific is after upper heater 21 and 4 position of suspended catalyst device are restored, main chamber body 1 and the secondary chamber
The equal sealing cover of body 3 altogether, and ensures that the second shut-off valve 32 on i.e. second pipe is located at opening state and makes main cavity 1 and pair
Cavity 3 is connected to.
Step 3: main chamber body and the intracorporal air pressure of the secondary chamber are alternately adjusted by air extractor and air charging system,
Realize the cleaning to main chamber body 1 and the secondary cavity 3.
Specifically, can be first evacuated by air extractor so that main chamber body and the secondary intracorporal air pressure of chamber reach true
Sky after about 1Pa, is being inflated by air charging system so that main chamber body and the secondary intracorporal air pressure of chamber reach normal pressure, about
1.01*105Pa；Then the above pumping, gas replenishment process are executed repeatedly, reach the cleaning effect of main chamber body 1 and the secondary cavity 3
Fruit；
Step 4: closing the company of main cavity 1 and secondary cavity 3 after main chamber body 1 and the secondary cavity 3 reach vacuum
Logical, then by air extractor adjusting main chamber body 1 to vacuum, and the temperature for adjusting gas-phase chemical reaction crystallizing field is
1000-1200 DEG C, growing boron nitride-graphene hetero-junctions gas is then filled with toward main chamber body 1 by gas source device
Source, and in gas-phase chemical reaction crystallizing field growing boron nitride-graphene hetero-junctions.
Specifically, boron nitride-graphene hetero-junctions growth actual temp, growth time, growth gas concentration can roots
According to needing to be configured, does not do detailed expansion herein and discuss.
Step 5: to the end of boron nitride-graphene hetero-junctions growth nearly or terminating, air extractor is closed, opening is filled
Device of air is filled with protection gas in main cavity 1, meanwhile, open the in the described first secondary cavity 33 and second 34 the two of secondary cavity
The heating power supply of two section thermals sets heating rate, reaches normal pressure to the air pressure in main chamber body 1, opens air pressure maintenance
The valve of device, and adjust 1 chemical deposition reaction zone of main cavity and reach 800 DEG C -900 DEG C, preferably 850 DEG C.
Step 6: volatilizing when the described first secondary cavity 33 generates the gaseous state that gaseous state sublimed sulfur and the second secondary cavity 34 generate
Metal is crossed, closes air charging system, simultaneously, it is ensured that main cavity 1 is connected to secondary cavity 3, and opens the first cut-off in first pipe
Valve 31 has both protection gas, assisted reaction gas and the gas for driving gas so that being passed through in the first secondary cavity from first pipe, at this
Under the driving of gas, in the second secondary cavity 34 described in the sulphur source gas flow that heating volatilization obtains in the first secondary cavity 33, and with
The transition metal source gas that heating volatilization obtains in described second secondary cavity 34 combines and flows to chemical vapour deposition reaction jointly
Area is grown to obtain the iso- tri- floor hetero-junctions of TMDs of boron nitride-graphene.
It should be noted that having both protection gas, assisted reaction gas and the preferred argon hydrogen mixture of gas for driving gas, argon hydrogen
The concentration and flow velocity of mixed gas, which can according to need, to be configured.In addition, it is necessary to explanation, the time of TMDs growth can be with
It is configured as needed.
Step 7: finishing to TMDs growth, disconnection main cavity 1 is connected to secondary cavity 3, meanwhile, it is secondary to close described first
The heating power supply of cavity 33 and the secondary heating mechanism in second 34 the two of secondary cavity maintains device closing air pressure, then opens
Air extractor is opened, the air pressure in adjusting main cavity 1 to vacuum, and be growth nitrogen by the temperature setting of chemical vapor deposition reaction zone
Change the temperature of boron, is then filled with the gas source of growing boron nitride toward main chamber body 1 by gas source device, and in gas chemistry
The iso- four floor hetero-junctions of TMDs- boron nitride of reactive deposition area growing boron nitride-graphene.
Step 8: finishing to the four layers of hetero-junctions growth of the iso- TMDs- boron nitride of boron nitride-graphene, Temperature fall is depressurized to
Room temperature normal pressure.
Then the upper cover 11 for opening main cavity 1 takes out four layers of the iso- TMDs- boron nitride of boron nitride-graphene being prepared
Four layers of hetero-junctions.
Structure, feature and effect of the invention, the above institute are described in detail based on the embodiments shown in the drawings
Only presently preferred embodiments of the present invention is stated, but the present invention does not limit the scope of implementation as shown in the drawings, it is all according to structure of the invention
Think made change or equivalent example modified to equivalent change, when not going beyond the spirit of the description and the drawings,
It should all be within the scope of the present invention.
Claims (16)
1. a kind of vertical heterojunction material, it is characterised in that: the vertical heterojunction material is by graphite alkenes material and transition
The vertical heterojunction of at least double-layer structure of metal dithionite race compound material composition；
Wherein, the graphite alkenes material and two chalcogenide material of the transition metal are all made of chemical vapour deposition technique system
It is standby；
The graphite alkenes material is the base material of two chalcogenide material of transition metal.
2. vertical heterojunction material according to claim 1, it is characterised in that: the graphite alkenes material is llowing group of materials
One of:
Graphene, boron nitride, the hetero-junctions formed by graphene and boron nitride.
3. a kind of chemical vapor deposition unit of vertical heterojunction material described in growth claim 1, which is characterized in that describedization
Learning vapor phase growing apparatus includes:
It is provided with the main cavity (1) of chemical deposition reaction zone, is provided at the chemical deposition reaction zone for providing wait react
The first heater (2) of chemical deposition reaction required temperature occurs for gas；
Gas source device, setting is external in main chamber body (1), grows the stone for providing to the chemical deposition reaction zone
The material of black alkenes；
Secondary cavity (3), setting is internal in main chamber body (1), for holding and heating solid sources are with anti-to the chemical deposition
Area is answered to provide the material for growing two chalkogenide of transition metal；
It can be made by the connection situation of the on-off of the control gas source device and the secondary cavity (3) and main chamber body (1)
It obtains and the graphite alkenes material is obtained by chemical deposition and two chalcogenide of transition metal is obtained by chemical deposition
The perpendicular heterojunction structure of object material, and the graphite alkenes material is the base of two chalcogenide material of transition metal
Bottom material.
4. chemical vapor deposition unit according to claim 3, which is characterized in that the first heater (2) includes setting
Set liftable upper heater (21) and liftable lower heater (22) relative to each other in the vertical direction；
The side of lower heater (22) towards the upper heater (21) is provided with the pallet for bearing basement material
(23)；
The chemical deposition reaction zone is formed above the pallet (23).
5. chemical vapor deposition unit according to claim 4, which is characterized in that liftable upper heater (21) packet
Include first motor axis (211) and primary heater (212)；
The first motor axis (211) is mounted on the upper lid of main chamber body (1), and can be upper with respect to main chamber body (1)
Lid lifting；
The primary heater (212) is fixed at upper cover of the first motor axis (211) far from main chamber body (1)
One end.
6. chemical vapor deposition unit according to claim 4, which is characterized in that liftable lower heater (22) packet
Include the second motor shaft (221) and secondary heater (222)；
Second motor shaft (221) is mounted on the bottom cover of main chamber body (1), and can be with respect to the bottom of main chamber body (1)
Lid lifting；
The secondary heater (222) is fixed at bottom cover of second motor shaft (221) far from main chamber body (1)
One end.
7. chemical vapor deposition unit according to claim 3, which is characterized in that the pair cavity (3) includes that sealing is connected
The first secondary cavity (33) and the second pair cavity (34)；
Described first secondary cavity (33) obtains gaseous state sulphur source for the solid-state sulphur source that holds and volatilize；
Described second secondary cavity (34) obtains gaseous transition source for the solid-state transition metal source that holds and volatilize；
The gaseous sulfur source stream in the first secondary cavity (33) into the described second secondary cavity (34), and with it is described second secondary
The gaseous transition source effect generated in cavity (34) generates two chalkogenide of gaseous transition, the gaseous state transition
Metal dithionite race compound flows to the chemical deposition reaction zone progress chemical vapor deposition and obtains two chalcogenide of transition metal
Object material.
8. chemical vapor deposition unit according to claim 7, which is characterized in that be provided on the described first secondary cavity (33)
First air inlet and the first gas outlet are provided with the second air inlet and the second gas outlet on the second secondary cavity (34)；
The first pipe of the first shut-off valve of band (31) is sealedly connected at first air inlet, during first gas outlet passes through
Between pipeline connect second air inlet, the second pipe of the second shut-off valve of band (32) is sealedly connected at second gas outlet
Road, the other end of the second pipe extend to the chemical deposition reaction zone.
9. chemical vapor deposition unit according to claim 7, which is characterized in that the first secondary cavity (33) and described the
Second mate's cavity (34) includes:
Seal cavity (331)；
Secondary heating mechanism (332), setting make in the seal cavity (331) for holding and heating corresponding Solid Source
It volatilizees.
10. chemical vapor deposition unit according to claim 9, which is characterized in that the secondary heating mechanism (332) includes
Liner layer (3321), heating element (3322) and outer fixing layer (3323) that successively nesting is arranged from inside to outside；
The liner layer (3321), which is formed, has open-topped the first container, and the first container is for holding corresponding solid-state
Source；
The external side of the first container is arranged in heating element (3322), makes its volatilization for heating corresponding Solid Source.
11. chemical vapor deposition unit according to claim 10, which is characterized in that the secondary heating mechanism further include:
Galvanic couple element (3324)；
Galvanic couple element (3324) setting is electrically connected the heating element (3322) in the outer fixing layer (3323),
For measuring the temperature of the heating element (3322).
12. according to any one of the claim 3-11 chemical vapor deposition unit, which is characterized in that the chemical vapor deposition
Device further include: suspended catalyst device (4)；
The suspended catalyst device (4) from chemical deposition reaction zone described in the upper direction of the chemical deposition reaction zone for mentioning
For catalyst.
13. chemical vapor deposition unit according to claim 12, which is characterized in that suspended catalyst device (4) packet
It includes:
Support plate (41) which is provided with one or more for placing the perforation of catalyst；
Third motor shaft (42), one end are fixedly connected the support plate (41), and the other end is rotatablely connected the upper of main chamber body (1)
Lid.
14. according to any one of the claim 3-11 chemical vapor deposition unit, which is characterized in that the chemical vapor deposition
Device further include: air extractor；
The air extractor connects main chamber body (1) by the third pipeline with third shut-off valve, for main chamber body
(1) carrying out pumping makes main chamber body (1) reach the first air pressure required for the growth graphite alkenes material.
15. according to any one of the claim 3-11 chemical vapor deposition unit, which is characterized in that the chemical vapor deposition
Device further include: air charging system；
The air charging system connects main chamber body (1) by the 4th pipeline of the 4th shut-off valve of band, for main chamber body
(1) be inflated make main chamber body (1) reach the second air pressure required for growth two chalcogenide material of transition metal,
And/or reaction protection gas is provided into main chamber body (1).
16. according to any one of the claim 3-11 chemical vapor deposition unit, which is characterized in that the chemical vapor deposition
Device further include: air pressure maintains device；
The air pressure maintains device to connect main chamber body (1) by the 5th pipeline of the 5th shut-off valve of band, for maintenance institute
The air pressure stated in main cavity (1) is equal to atmospheric pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910438941.6A CN110047912B (en) | 2019-05-24 | 2019-05-24 | Chemical vapor deposition device for vertical heterojunction material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910438941.6A CN110047912B (en) | 2019-05-24 | 2019-05-24 | Chemical vapor deposition device for vertical heterojunction material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110047912A true CN110047912A (en) | 2019-07-23 |
| CN110047912B CN110047912B (en) | 2024-06-14 |
Family
ID=67283445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910438941.6A Active CN110047912B (en) | 2019-05-24 | 2019-05-24 | Chemical vapor deposition device for vertical heterojunction material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110047912B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201726A (en) * | 2021-04-30 | 2021-08-03 | 浙江大学杭州国际科创中心 | Preparation method of two-dimensional material |
| CN113278948A (en) * | 2021-04-16 | 2021-08-20 | 中国计量大学 | Tin sulfide/tin disulfide heterojunction material and preparation method thereof |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62112781A (en) * | 1985-11-12 | 1987-05-23 | Hitachi Ltd | Chemical vapor deposition apparatus |
| CN103194729A (en) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | Method for preparing metal chalcogenide film |
| JP2013159798A (en) * | 2012-02-02 | 2013-08-19 | Mitsubishi Electric Corp | Plasma cvd device |
| KR20140029037A (en) * | 2012-08-31 | 2014-03-10 | 김기호 | Thermal chemical vapor deposition system for low temperature growth of oxide-based nanorods |
| CN104058458A (en) * | 2014-07-07 | 2014-09-24 | 中国科学技术大学 | Method for preparing high-quality single/double-layer controllable molybdenum disulfide |
| KR101469502B1 (en) * | 2013-07-16 | 2014-12-05 | 한국세라믹기술원 | High temperature chemical vapor deposition apparatus for growing single crystal |
| CN104233226A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| CN104894530A (en) * | 2015-06-09 | 2015-09-09 | 国家纳米科学中心 | Two-dimensional transition metal sulfur compound film and preparation method and application thereof |
| JP2016096178A (en) * | 2014-11-12 | 2016-05-26 | 古河機械金属株式会社 | Deposition method, semiconductor element manufacturing method and free-standing substrate manufacturing method |
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN106756871A (en) * | 2016-11-14 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | A kind of Transition-metal dichalcogenide two-dimensional material-Graphene heterojunction structure and its growth in situ method |
| CN107164739A (en) * | 2017-06-12 | 2017-09-15 | 中国科学技术大学 | The method and apparatus of CVD growth multi-heterostructure-layerses |
| CN107447200A (en) * | 2016-10-28 | 2017-12-08 | 北京大学 | A kind of method for preparing transient metal chalcogenide compound/two-dimensional layer material interlayer heterojunction structure using two step chemical vapour deposition techniques |
| CN107815664A (en) * | 2017-10-24 | 2018-03-20 | 中国科学技术大学 | Chemical vapor depsotition equipment, method and purposes |
| CN108048816A (en) * | 2017-12-08 | 2018-05-18 | 中国科学技术大学 | For closing on the apparatus and method of catalytic chemical gaseous phase deposition |
| CN108439382A (en) * | 2018-04-20 | 2018-08-24 | 清华大学 | A kind of method and device of controllable liquid carbon source preparing graphene through chemical vapor deposition |
| CN108666358A (en) * | 2017-03-29 | 2018-10-16 | 中国科学院大连化学物理研究所 | The preparation method of transient metal chalcogenide compound and boron nitride or graphene hetero-junctions |
| CN209929310U (en) * | 2019-05-24 | 2020-01-10 | 合肥本源量子计算科技有限责任公司 | Vertical heterojunction material and chemical vapor deposition device |
-
2019
- 2019-05-24 CN CN201910438941.6A patent/CN110047912B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62112781A (en) * | 1985-11-12 | 1987-05-23 | Hitachi Ltd | Chemical vapor deposition apparatus |
| JP2013159798A (en) * | 2012-02-02 | 2013-08-19 | Mitsubishi Electric Corp | Plasma cvd device |
| KR20140029037A (en) * | 2012-08-31 | 2014-03-10 | 김기호 | Thermal chemical vapor deposition system for low temperature growth of oxide-based nanorods |
| CN103194729A (en) * | 2013-03-27 | 2013-07-10 | 中国科学院物理研究所 | Method for preparing metal chalcogenide film |
| CN104233226A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| KR101469502B1 (en) * | 2013-07-16 | 2014-12-05 | 한국세라믹기술원 | High temperature chemical vapor deposition apparatus for growing single crystal |
| CN104058458A (en) * | 2014-07-07 | 2014-09-24 | 中国科学技术大学 | Method for preparing high-quality single/double-layer controllable molybdenum disulfide |
| JP2016096178A (en) * | 2014-11-12 | 2016-05-26 | 古河機械金属株式会社 | Deposition method, semiconductor element manufacturing method and free-standing substrate manufacturing method |
| CN104894530A (en) * | 2015-06-09 | 2015-09-09 | 国家纳米科学中心 | Two-dimensional transition metal sulfur compound film and preparation method and application thereof |
| CN107447200A (en) * | 2016-10-28 | 2017-12-08 | 北京大学 | A kind of method for preparing transient metal chalcogenide compound/two-dimensional layer material interlayer heterojunction structure using two step chemical vapour deposition techniques |
| CN106756871A (en) * | 2016-11-14 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | A kind of Transition-metal dichalcogenide two-dimensional material-Graphene heterojunction structure and its growth in situ method |
| CN106676498A (en) * | 2017-03-27 | 2017-05-17 | 中国科学技术大学 | Chemical vapor deposition system |
| CN108666358A (en) * | 2017-03-29 | 2018-10-16 | 中国科学院大连化学物理研究所 | The preparation method of transient metal chalcogenide compound and boron nitride or graphene hetero-junctions |
| CN107164739A (en) * | 2017-06-12 | 2017-09-15 | 中国科学技术大学 | The method and apparatus of CVD growth multi-heterostructure-layerses |
| CN107815664A (en) * | 2017-10-24 | 2018-03-20 | 中国科学技术大学 | Chemical vapor depsotition equipment, method and purposes |
| CN108048816A (en) * | 2017-12-08 | 2018-05-18 | 中国科学技术大学 | For closing on the apparatus and method of catalytic chemical gaseous phase deposition |
| CN108439382A (en) * | 2018-04-20 | 2018-08-24 | 清华大学 | A kind of method and device of controllable liquid carbon source preparing graphene through chemical vapor deposition |
| CN209929310U (en) * | 2019-05-24 | 2020-01-10 | 合肥本源量子计算科技有限责任公司 | Vertical heterojunction material and chemical vapor deposition device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113278948A (en) * | 2021-04-16 | 2021-08-20 | 中国计量大学 | Tin sulfide/tin disulfide heterojunction material and preparation method thereof |
| CN113201726A (en) * | 2021-04-30 | 2021-08-03 | 浙江大学杭州国际科创中心 | Preparation method of two-dimensional material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110047912B (en) | 2024-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11447858B2 (en) | System and method for fabricating perovskite film for solar cell applications | |
| CN104485425B (en) | The processing method of perovskite-type material preparation method and equipment and its photovoltaic device | |
| US11293101B2 (en) | Method based on multi-source deposition for fabricating perovskite film | |
| CN101620993B (en) | Substrate processing method and substrate processing apparatus | |
| CN102560431B (en) | Metal organic chemical vapor deposition device and chamber assembly thereof | |
| CN110047912A (en) | A kind of vertical heterojunction material and chemical vapor deposition unit | |
| US20080175993A1 (en) | Reel-to-reel reaction of a precursor film to form solar cell absorber | |
| CN105586641B (en) | Methylamine lead halide phosphate compounds monocrystalline micro flakes growing method and grower | |
| CN102224599A (en) | Dry cleaning of silicon surface for solar cell applications | |
| CN101379214A (en) | Epitaxial deposition process and apparatus | |
| EP2102898A2 (en) | Reel-to-reel reaction of precursor film to form solar cell absorber | |
| CN101958371B (en) | Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells | |
| CN110416065A (en) | Molybdenum disulfide/bis- tungsten selenide vertical heterojunctions preparation method | |
| CN113604873B (en) | Vapor phase epitaxy system and maintenance operation method thereof | |
| CN106811736A (en) | A kind of chemical vapor deposition unit | |
| CN209929310U (en) | Vertical heterojunction material and chemical vapor deposition device | |
| CN108203814A (en) | The device of dual cavity is pollution-free chemical vapor deposition two-dimensional material hetero-junctions | |
| US9478448B2 (en) | Thermal treatment system and method of performing thermal treatment and method of manufacturing CIGS solar cell using the same | |
| CN208008897U (en) | The device of dual cavity is pollution-free chemical vapor deposition two-dimensional material hetero-junctions | |
| CN212299942U (en) | Lifting structure for film coating equipment | |
| CN101240445A (en) | Heater rotating device used for silicon carbide epitaxy | |
| US20100139557A1 (en) | Reactor to form solar cell absorbers in roll-to-roll fashion | |
| CN104810249B (en) | The method of CdS film or CdS nanostructureds is grown in CdTe thin film | |
| CN113604875B (en) | Vapor phase epitaxy system and maintenance operation method thereof | |
| WO2010078088A1 (en) | Reactor to form solar cell absorbers in roll-to-roll fashion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 230008 6th floor, building E2, phase II, venture industrial park, high tech Zone, Hefei City, Anhui Province Applicant after: Benyuan Quantum Computing Technology (Hefei) Co.,Ltd. Address before: 230008 6th floor, building E2, phase II, venture industrial park, high tech Zone, Hefei City, Anhui Province Applicant before: ORIGIN QUANTUM COMPUTING COMPANY, LIMITED, HEFEI |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |