CN113270318A - Manufacturing process of unidirectional negative resistance type TVS chip - Google Patents
Manufacturing process of unidirectional negative resistance type TVS chip Download PDFInfo
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- CN113270318A CN113270318A CN202110584930.6A CN202110584930A CN113270318A CN 113270318 A CN113270318 A CN 113270318A CN 202110584930 A CN202110584930 A CN 202110584930A CN 113270318 A CN113270318 A CN 113270318A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000001259 photo etching Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 230000001502 supplementing effect Effects 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 6
- 238000005554 pickling Methods 0.000 claims description 25
- 238000001459 lithography Methods 0.000 claims description 20
- 239000000523 sample Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000000746 purification Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 7
- 239000002912 waste gas Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001883 metal evaporation Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001962 electrophoresis Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 230000002457 bidirectional effect Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 235000021110 pickles Nutrition 0.000 description 13
- 238000005406 washing Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention belongs to the field of TVS chip manufacturing, in particular to a manufacturing process of a unidirectional negative resistance type TVS chip, aiming at the problems that the existing unidirectional negative resistance type TVS chip does not have the advantages of low clamping voltage and low breakdown voltage of a bidirectional TVS diode and does not have the advantage of low unidirectional TVS negative surge clamping voltage, the following scheme is provided, and the manufacturing process comprises the following steps: s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process; s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process; s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region; s4, pre-expanding phosphorus: supplementing phosphorus on two sides; s5, removing the double-sided oxide layer; s6, boron is supplemented on the back side, and the bidirectional TVS diode has the advantages of low clamping voltage and low breakdown voltage of the bidirectional TVS diode and also has the advantage of low negative surge clamping voltage of the unidirectional TVS diode.
Description
Technical Field
The invention relates to the technical field of TVS chip manufacturing, in particular to a manufacturing process of a unidirectional negative resistance type TVS chip.
Background
A Transient Voltage Suppressor (TVS) is a protection device, and it plays a role of protecting a sensitive device by clipping a peak of a Transient Voltage which is generated by a lightning strike, a switch, etc. and appears at an input terminal and an output terminal of the sensitive device.
The existing unidirectional negative resistance type TVS chip has no advantages of low clamping voltage and low breakdown voltage of a bidirectional TVS diode and no advantage of low unidirectional TVS negative surge clamping voltage, so that a unidirectional negative resistance type TVS chip manufacturing process is provided for solving the problems.
Disclosure of Invention
The invention aims to solve the problems that a unidirectional negative resistance type TVS chip has no advantages of low clamping voltage and low breakdown voltage of a bidirectional TVS diode and has no advantage of low unidirectional TVS negative surge clamping voltage in the prior art, and the manufacturing process of the unidirectional negative resistance type TVS chip is provided.
In order to achieve the purpose, the invention adopts the following technical scheme:
a manufacturing process of a unidirectional negative resistance TVS chip comprises the following steps:
s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process;
s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process;
s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region;
s4, pre-expanding phosphorus: supplementing phosphorus on two sides;
s5, removing the double-sided oxide layer;
s6, supplementing boron to the back;
s7, phosphor main diffusion, contact area photoetching, metal evaporation, metal photoetching and testing.
Preferably, in S1, the monocrystalline silicon piece is soaked in an acid and SC3 solution for 5-10min, and then rinsed with deionized water, and dried after rinsing.
Preferably, in S3, the size and shape of the single crystal silicon wafer are scanned, 3D modeling is performed based on the scan data, the lithography area is determined, the lithography pattern is drawn on the model, the lithography process is previewed, and actual lithography is performed with reference to the process if the preview is not problematic.
Preferably, in S3, after the photolithography, the appearance of the workpiece is obtained, the obtained appearance is compared with a preset appearance, if the obtained appearance is consistent with the preset appearance, the next process is performed, and if the obtained appearance is inconsistent with the preset appearance, the difference portion is found, recorded, trimmed, and the difference portion is classified and counted.
Preferably, in the step S5, the silicon wafer is placed in an acid washing tank, and the silicon wafer is shaken for 1-5 min.
Preferably, be provided with heater and 3-6 temperature detect probe in the pickling bath, temperature detect probe measures the temperature of the pickle in the pickling bath, with measured data transmission to controller, compares with the temperature that the controller was preset, and when the temperature was less than preset data, the controller started the heater and heats the pickle.
Preferably, the data transmission controller for detecting the temperature detection probe compares the received 3-6 groups of data, and when the data are different, the controller controls the stirrer to start to stir the pickling solution.
Preferably, a purification mechanism is arranged above the pickling tank and used for purifying and discharging waste gas generated by the pickling tank.
Compared with the prior art, the invention has the beneficial effects that:
the bidirectional TVS diode has the advantages of low clamping voltage and breakdown voltage of the bidirectional TVS diode and low negative surge clamping voltage of the unidirectional TVS diode.
Drawings
Fig. 1 is a schematic structural diagram of a TVS chip of a unidirectional negative resistance TVS chip manufacturing process according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example one
Referring to fig. 1, a manufacturing process of a unidirectional negative resistance TVS chip includes the following steps:
s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process;
s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process;
s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region;
s4, pre-expanding phosphorus: supplementing phosphorus on two sides;
s5, removing the back oxide layer;
s6, supplementing boron to the back;
s7, phosphor main diffusion, contact area photoetching, metal evaporation, metal photoetching and testing.
In this embodiment, in S1, the silicon single crystal wafer is soaked in the acid and SC3 solution for 5min, and then rinsed with deionized water, and dried after rinsing.
In this embodiment, in S3, the size and shape of the single crystal silicon wafer are scanned, 3D modeling is performed according to the scan data, the lithography area is determined, the lithography pattern is drawn on the model, the lithography process is previewed, and actual lithography is performed with reference to the process if there is no problem in the previewing.
In this embodiment, in S3, after the photolithography, the appearance of the workpiece is obtained, the obtained appearance is compared with a preset appearance, the next process is performed if the obtained appearance is consistent with the preset appearance, and if the obtained appearance is inconsistent with the preset appearance, the difference portion is found out, recorded, trimmed, and the difference portion is classified and counted.
In this embodiment, in S5, the silicon wafer is placed in an acid washing tank, and the silicon wafer is shaken for 1 min.
In this embodiment, be provided with heater and 3 temperature detect probe in the pickling bath, temperature detect probe measures the temperature of the pickle in the pickling bath, with measured data transmission to controller, contrasts with the temperature that the controller was preset, and when the temperature was less than preset data, the controller started the heater and heats the pickle.
In this embodiment, the data transmission controller that the temperature detection probe detected, the controller contrasts 3 group data received, and when there was the difference in data, the controller control agitator started, stirs the pickle.
In this embodiment, the purification mechanism is arranged above the pickling tank, and the purification mechanism purifies and discharges the waste gas generated by the pickling tank.
Example two
Referring to fig. 1, a manufacturing process of a unidirectional negative resistance TVS chip includes the following steps:
s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process;
s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process;
s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region;
s4, pre-expanding phosphorus: supplementing phosphorus on two sides;
s5, removing the double-sided oxide layer;
s6, supplementing boron to the back;
s7, phosphor main diffusion, photoetching groove, electrophoresis glass, contact area photoetching, metal evaporation, metal photoetching and testing.
In this embodiment, in S1, the silicon single crystal wafer is soaked in the acid and SC3 solution for 7min, and then rinsed with deionized water, and dried after rinsing.
In this embodiment, in S3, the size and shape of the single crystal silicon wafer are scanned, 3D modeling is performed according to the scan data, the lithography area is determined, the lithography pattern is drawn on the model, the lithography process is previewed, and actual lithography is performed with reference to the process if there is no problem in the previewing.
In this embodiment, in S3, after the photolithography, the appearance of the workpiece is obtained, the obtained appearance is compared with a preset appearance, the next process is performed if the obtained appearance is consistent with the preset appearance, and if the obtained appearance is inconsistent with the preset appearance, the difference portion is found out, recorded, trimmed, and the difference portion is classified and counted.
In this embodiment, in S5, the silicon wafer is placed in an acid washing tank, and the silicon wafer is shaken for 3 min.
In this embodiment, be provided with heater and 4 temperature detect probe in the pickling bath, temperature detect probe measures the temperature of the pickle in the pickling bath, with measured data transmission to controller, contrasts with the temperature that the controller was preset, and when the temperature was less than preset data, the controller started the heater and heated the pickle for the reaction rate of oxide layer and acidizing fluid.
In this embodiment, the data transmission controller that the temperature detection probe detected, the controller contrasts 4 groups of data received, and when there was the difference in data, the controller control agitator started, stirs the pickle, makes each position temperature of pickle even.
In this embodiment, the top of pickling bath is equipped with purification mechanism, and purification mechanism purifies the discharge to the waste gas that the pickling bath produced, avoids waste gas pollution environment.
EXAMPLE III
Referring to fig. 1, a manufacturing process of a unidirectional negative resistance TVS chip includes the following steps:
s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process;
s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process;
s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region;
s4, pre-expanding phosphorus: supplementing phosphorus on two sides;
s5, removing the back oxide layer;
s6, supplementing boron to the back;
s7, phosphor main diffusion, contact area photoetching, metal evaporation, metal photoetching and testing.
In this embodiment, in S1, the silicon single crystal wafer is soaked in the acid and SC3 solution for 10min, and then rinsed with deionized water, and dried after rinsing.
In this embodiment, in S3, the size and shape of the single crystal silicon wafer are scanned, 3D modeling is performed according to the scan data, the lithography area is determined, the lithography pattern is drawn on the model, the lithography process is previewed, and actual lithography is performed with reference to the process if there is no problem in the previewing.
In this embodiment, in S3, after the photolithography, the appearance of the workpiece is obtained, the obtained appearance is compared with a preset appearance, the next process is performed if the obtained appearance is consistent with the preset appearance, and if the obtained appearance is inconsistent with the preset appearance, the difference portion is found out, recorded, trimmed, and the difference portion is classified and counted.
In this embodiment, in S5, the silicon wafer is placed in an acid washing tank, and the silicon wafer is shaken for 5 min.
In this embodiment, be provided with heater and-6 temperature detect probe in the pickling bath, temperature detect probe measures the temperature of the pickle in the pickling bath, with measured data transmission to controller, contrasts with the temperature that the controller was preset, and when the temperature was less than preset data, the controller started the heater and heated the pickle for the reaction rate of oxide layer and acidizing fluid.
In this embodiment, the data transmission controller that the temperature detection probe detected, the controller contrasts 6 groups of data received, and when there was the difference in data, the controller control agitator started, stirs the pickle, makes each position temperature of pickle even.
In this embodiment, the top of pickling bath is equipped with purification mechanism, and purification mechanism purifies the discharge to the waste gas that the pickling bath produced, avoids waste gas pollution environment.
The unidirectional negative resistance type TVS chip manufactured by the manufacturing process of the unidirectional negative resistance type TVS chip proposed in the first, second, and third embodiments has the advantages of low clamping voltage and low breakdown voltage of the bidirectional TVS diode, and also has the advantage of low clamping voltage of the unidirectional TVS negative surge, and the second embodiment is the best embodiment.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (8)
1. A manufacturing process of a unidirectional negative resistance TVS chip is characterized by comprising the following steps:
s1, diffusion pretreatment: adopting a P-type monocrystalline silicon wafer, and carrying out chemical treatment on the surface of the silicon wafer through an acid and SC3# formula cleaning process;
s2, primary oxygen: primary oxygen is completed by using a hydrogen-oxygen synthesis process;
s3, base region photoetching: photoetching a front base region and photoetching a back auxiliary region;
s4, pre-expanding phosphorus: supplementing phosphorus on two sides;
s5, removing the double-sided oxide layer;
s6, supplementing boron to the back;
s7, phosphor main diffusion, photoetching groove, electrophoresis glass, contact area photoetching, metal evaporation, metal photoetching and testing.
2. The manufacturing process of a unidirectional negative resistance TVS chip as claimed in claim 1, wherein in S1, the monocrystalline silicon piece is soaked in acid and SC3 solution for 5-10min, and then rinsed with deionized water, and finally dried after rinsing.
3. The manufacturing process of a unidirectional negative resistance TVS chip of claim 1, wherein in S3, the dimensions and shapes of the monocrystalline silicon wafer are scanned, 3D modeling is performed according to the scan data, the lithography area is determined, the lithography pattern is drawn on the model, the lithography process is previewed, and actual lithography is performed with reference to the process if the previewing is not problematic.
4. The manufacturing process of a unidirectional negative resistance TVS chip as claimed in claim 1, wherein in S3, after the photolithography, the appearance of the workpiece is obtained, the obtained appearance is compared with a predetermined appearance, if the obtained appearance is consistent with the predetermined appearance, the next process is performed, if the obtained appearance is inconsistent with the predetermined appearance, the difference is found out, the difference is recorded and trimmed, and the difference is classified and counted.
5. The manufacturing process of a unidirectional negative resistance TVS chip as claimed in claim 1, wherein in S5, the silicon wafer is placed into a pickling bath and shaken for 1-5 min.
6. The manufacturing process of the TVS chip of claim 5, wherein a heater and 3-6 temperature detection probes are arranged in the pickling tank, the temperature detection probes measure the temperature of the pickling solution in the pickling tank, the measured data is transmitted to the controller to be compared with the preset temperature of the controller, and when the temperature is lower than the preset data, the controller starts the heater to heat the pickling solution.
7. The manufacturing process of the unidirectional negative resistance TVS chip as claimed in claim 6, wherein the data transmission controller detected by the temperature detection probe compares the received 3-6 sets of data, and when there is a difference in data, the controller controls the stirrer to start to stir the pickling solution.
8. The manufacturing process of the unidirectional negative resistance TVS chip as claimed in claim 5, wherein a purification mechanism is arranged above the pickling tank, and the purification mechanism purifies and discharges the waste gas generated by the pickling tank.
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| CN202110584930.6A CN113270318A (en) | 2021-05-27 | 2021-05-27 | Manufacturing process of unidirectional negative resistance type TVS chip |
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| CN202110584930.6A CN113270318A (en) | 2021-05-27 | 2021-05-27 | Manufacturing process of unidirectional negative resistance type TVS chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114899091A (en) * | 2022-03-28 | 2022-08-12 | 江苏晟驰微电子有限公司 | Diffusion process for manufacturing voltage stabilizing tube and diffusion equipment thereof |
| CN115472605A (en) * | 2022-09-10 | 2022-12-13 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
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| CN115472605B (en) * | 2022-09-10 | 2023-11-28 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
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