CN1988114A - Process for producing rectifier tube chip by one time coating source full spreading - Google Patents
Process for producing rectifier tube chip by one time coating source full spreading Download PDFInfo
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- CN1988114A CN1988114A CN 200610134895 CN200610134895A CN1988114A CN 1988114 A CN1988114 A CN 1988114A CN 200610134895 CN200610134895 CN 200610134895 CN 200610134895 A CN200610134895 A CN 200610134895A CN 1988114 A CN1988114 A CN 1988114A
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Abstract
This invention relates to a method for producing chips of rectifying tubes with one time of coating source total diffusion used in producing large power rectifying diodes, which reduces four procedures compared with the process of oxidation, single-face erosion, removing the oxidation layer to expand B and AL and expand P source and saves large amount of electric energy, manpower and chemical medicines, and the cost of this invented impurity source is only 0.1-0.3 yuan less than one-tenth of the paper source cost.
Description
Technical field
The present invention relates to a kind of process that is applied in the producing rectifier tube chip by one time coating source full spreading of power rectifier diode production.
Background technology
In the prior art, power rectifier diode production technology is complicated, except comprising silicon chip cleaning and diffusing procedure, also contains oxidation, single face burn into deoxidation layer expansion boron aluminium, deoxidation layer expand P source operation, wastes a large amount of electric energy, artificial and chemicals.The method that once spread in also useful paper source, the cost of every impurity source is a 3-10 unit, cost is higher.
Summary of the invention
The process that the purpose of this invention is to provide a kind of producing rectifier tube chip by one time coating source full spreading, this method and the similar or close technology cost of comparing is lower, diffuses into instinct and saves more than 50%, is fit to the production of rectifier diode in enormous quantities.
For achieving the above object, the present invention is achieved through the following technical solutions:
The process of producing rectifier tube chip by one time coating source full spreading is characterized in that this method may further comprise the steps:
1) silicon chip cleans; Silicon chip through the lacquer that reduces internal heat, shakeout, deoil, float oxide layer, go metal ion to handle after, the silicon chip of cleaning, it is stand-by to be put in the roaster oven dry;
2) perfect diffusion;
(1) preparation;
1. prepare impurity source;
A. the preparation of aluminum nitrate-diboron trioxide solution:
In 500ml top grade absolute ethyl alcohol, put into 50 gram high pure nitric acid aluminium and the high-purity diboron trioxides of 500mg;
B. the preparation of phosphorus pentoxide ethanolic solution:
Getting the high-purity phosphorus pentoxide of 10g fully is dissolved in and becomes dense phosphorus pentoxide solution in the 200g top grade absolute ethyl alcohol;
2. prepare copper-bath: CU
2SO
4: H
2It is stand-by that O-5ml:100ml splashes into several HF;
3. prepare corrosive liquid: press HNO
3: the preparation in 10: 1 of HF volume ratio;
4. the zinc sulfate of preparing electrolyte: 500g is dissolved in the high purity water of 2500ml;
5. clean quartzy grillage; Boil 1#.2# liquid each two times, hot and cold high purity water flushing is dried stand-by in the roaster;
6. open diffusion furnace, furnace temperature is set in 1250 ℃;
(2) be coated with impurity source; Impurity source is poured in the drop bottle, and silicon chip is placed on the interior filter paper of enamel tray; Coat 2-3 in the one side of silicon chip and drip the boron aluminum impurity source, evenly be deployed in baking (also can dry in the shade when temperature is high) 2min under the infrared lamp, the one side that will be coated with impurity source then stacks relatively; Another side is with the even boderizing of writing brush source, and the every back side all is coated with, and fitly overlays on the quartz plate boat after dried slightly, cuts or polish jade with an emery wheel compacting with silicon;
(3) diffusion; The deviation dial gauge is evenly got back to zero point gradually by negative terminal when furnace temperature rises to 1250 ℃ of given working temperatures, quartzy grillage is put into fire door gives hot 10min; Push flat-temperature zone diffusion 35-60h then, near the scheduled time, coupongs are surveyed the diffusion junction depth at any time;
(4) annealing; After junction depth reaches designing requirement, furnace temperature was reduced to 900 ℃ of constant temperature 2 hours, reduce to 300 ℃ naturally again after, quartzy grillage is pulled to fire door, take out cooling back, silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(5) the super sheet of HF; Cut off the temperature controller total power switch, treat that temperature reduces to below 300 ℃ naturally, quartzy grillage is pulled to fire door, and take out the cooling back, and silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(6) Pyrex are removed in electrolysis; Silicon chip is put into the enamel tray that fills 20% solution of zinc sulfate, energized, Push switch on the knot sheet, is just terminating at copper cash with the negative terminal of electrolysis apparatus, be immersed in the solution, Faradaic current 50-250mA, it is following for qualified to drop to 20mA gradually, two-sided one by one electrolysis, after the taking-up, high purity water flushing 2min;
(7) test; Through surface concentration R
sMeasurement, voltage characteristic are measured, junction depth is measured, and test passes is a finished product.
The invention has the beneficial effects as follows easier than existing technology, reduced technical process as comparing and lacked 4 procedures with oxidation, single face burn into deoxidation layer expansion boron aluminium, deoxidation layer expand P source technology, saved a large amount of electric energy, artificial and chemicals, not only energy-conservation but also environmental protection, cost is low, and the cost of the every impurity source of method that once spreads with the paper source is a 3-10 unit, and the impurity source cost that adopts this technology only for 0.1-0.3 unit less than 1/10th of paper source cost.
Embodiment
The process of producing rectifier tube chip by one time coating source full spreading is characterized in that this method may further comprise the steps:
One, silicon chip cleans;
1) lacquer that reduces internal heat: silicon chip packed into to be filled in the beaker of absolute ethyl alcohol, soaks 24h, high purity water flushing 1min;
2) shakeout: silicon chip is plugged quartzy rack for cleaning, put into quartzy case, splash into the 5ml remover in high purity water, use the ultrasonic cleaner ultrasonic cleaning, it is dirty that water becomes, and outwells, and pours high purity water again into, ultrasonic cleaning 4h repeatedly, and it is clear that water becomes; With the silicon chip on the quartzy frame, put into plastic spoon, pour into hydrofluoric acid ultrasonic cleaning 10min with high purity water towards 2min, again with ultrasonic cleaner repeatedly ultrasonic cleaning to water clear till the time be about 12h;
3) 1# liquid preparation: ammoniacal liquor: hydrogen peroxide: the volume ratio of high purity water is 1: 2: 5;
The preparation of 2# liquid: hydrochloric acid: hydrogen peroxide: the volume ratio of high purity water is 1: 2: 5;
4) deoil: the 1# liquid after will preparing is poured in the quartz ampoule, and its amount is flooded silicon chip and is as the criterion, and boils 10min on electric furnace, washes 1min with high purity water, boils high purity water flushing 2min as stated above two times;
5) float oxide layer: silicon chip is put into the container that fills hydrofluoric acid, soak 10min, wash 1min with high purity water, heating is boiled 2 times, and high purity water is towards 2min;
6) remove metal ion: the 2# liquid after will preparing is poured in the quartzy case that fills silicon chip, and amount was as the criterion to soak silicon chip, is put into to heat on the electric furnace to boil 10min, and high-purity washing 2min boils 2 times as stated above, last high purity water flushing 5min;
7) silicon chip of Xi Jinging is put into V shelves baking 1h in the roaster, dries stand-by;
Quality requirement: 1) the silicon chip surface light after the cleaning, anhydrous mark: 2) silicon chip percentage of head rice 〉=99%;
The method of inspection and inspection rule: surface state detects by an unaided eye.
Points for attention
1) in the silicon chip cleaning process, soup must cover silicon chip must not make silicon chip be exposed in the air, and during mobile silicon chip, being exposed to the airborne time should be short as far as possible;
2) boil 1# liquid, 2# liquid after, when leaping high pure water, after should earlier water being poured quartzy cleaning case and treating that temperature descends, the case herb liquid can be outwelled;
3) clean when changing water, solution keeps 100ml at most in the case;
4) 1# liquid 2# liquid is now transferred with existing, can not place for a long time, and usefulness again after shaking up after having joined, otherwise influence cleaning performance;
5) after silicon chip cleans, must dry;
6) bottle of preparation 1#, 2# liquid with after to build with lid, in order to next stand-by.
Two, perfect diffusion process
(1) preparation;
1. prepare impurity source;
A. the preparation of aluminum nitrate-diboron trioxide solution:
In 500ml top grade absolute ethyl alcohol, put into 50 gram high pure nitric acid aluminium and the high-purity diboron trioxides of 500mg;
B. the preparation of phosphorus pentoxide ethanolic solution:
Getting the high-purity phosphorus pentoxide of 10g fully is dissolved in and becomes dense phosphorus pentoxide solution in the 200g top grade absolute ethyl alcohol;
2. prepare copper-bath: CU
2SO
4: H
2It is stand-by that O-5ml:100ml splashes into several HF;
3. prepare corrosive liquid: press HNO
3: the preparation in 10: 1 of HF volume ratio;
4. the zinc sulfate of preparing electrolyte: 500g is dissolved in the high purity water of 2500ml;
5. clean quartzy grillage; Boil 1#.2# liquid each two times, hot and cold high purity water flushing is dried stand-by in the roaster;
6. open diffusion furnace, furnace temperature is set in 1250 ℃;
(2) be coated with impurity source; Impurity source is poured in the drop bottle, and silicon chip is placed on the interior filter paper of enamel tray; Coat 2-3 in the one side of silicon chip and drip the boron aluminum impurity source, evenly be deployed in baking (also can dry in the shade when temperature is high) 2min under the infrared lamp, the one side that will be coated with impurity source then stacks relatively; Another side is with the even boderizing of writing brush source, and the every back side all is coated with, and fitly overlays on the quartz plate boat after dried slightly, cuts or polish jade with an emery wheel compacting with silicon;
(3) diffusion; The deviation dial gauge is evenly got back to zero point gradually by negative terminal when furnace temperature rises to 1250 ℃ of given working temperatures, quartzy grillage is put into fire door gives hot 10min; Push flat-temperature zone diffusion 35-60h then, near the scheduled time, coupongs are surveyed the diffusion junction depth at any time;
(4) annealing; After junction depth reaches designing requirement, furnace temperature was reduced to 900 ℃ of constant temperature 2 hours, reduce to 300 ℃ naturally again after, quartzy grillage is pulled to fire door, take out cooling back, silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(5) the super sheet of HF; Cut off the temperature controller total power switch, treat that temperature reduces to below 300 ℃ naturally, quartzy grillage is pulled to fire door, and take out the cooling back, and silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(6) Pyrex are removed in electrolysis; Silicon chip is put into the enamel tray that fills 20% solution of zinc sulfate, energized, Push switch on the knot sheet, is just terminating at copper cash with the negative terminal of electrolysis apparatus, be immersed in the solution, Faradaic current 50-250mA, it is following for qualified to drop to 20mA gradually, two-sided one by one electrolysis, after the taking-up, high purity water flushing 2min;
(7) test; Through surface concentration R
sMeasurement, voltage characteristic are measured, junction depth is measured, and test passes is a finished product.
A) surface concentration R
sMeasure: energized, select (I
MA) 10 grades, puncture (V
Mv) 200 grades, current settings 0.453 expands silicon slice placed on support with one, falls naturally on the knot sheet by the decline key, surveys R
sValue is pressed lifting key again, takes off the knot sheet, and two-sided one by one measurement selects qualified to make hypotenuse;
B) voltage characteristic is measured: print is adhered on the glass plate with the paraffin wax heating, and the black glue protection of cyclotomy print double-coated is ground positive angle, with 10: 1-HNO on the drilling machine in bevelling post
3: the HF solution corrosion goes for 2 times black glue to clean up, and oven dry is put on the comprehensive parameter tester plate measuring voltage characteristic;
C) junction depth is measured: the print after will once spreading is put on the filter paper, with tweezers the neat dissection surface of section is chosen in the silicon chip crushing, picks up to put into colour developing liquid and dye; Then with deionized water rinsing once, filter paper blots, and will dye good print and adhere on the measured material, and section up;
Three, quality requirement
1) one expands the junction depth requirement:
| Sequence number parameter project | Silicon chip resistivity (Ω cm) | Silicon wafer thickness (mm) | Diffusion junction depth (μ m) |
| 1 | 30-50 | 0.40 | 115 |
| 2 | 50--70 | 0.40 | 90--100 |
| 3 | 50--70 | 0.45 | 115 |
| 4 | 60--80 | 0.40 | 90--95 |
| 5 | 80--100 | 0.50 | 105--110 |
2) requirement of expanding surface concentration Rs: 35-60 Ω/
3) voltage characteristic requires: non repetitive peak off state voltage V
DSMMore than or equal to 1000V
Off-state is the repetitive peak electric current I not
DSMMore than or equal to 0.1mA
Non-repetitive peak reverse voltage V
RSMMore than or equal to 1000V
Reverse repetitive peak electric current I not
DSMMore than or equal to 0.1mA
4) one expands the silicon chip percentage of head rice: 98%
5) silicon chip surface state: non-oxidation, no marking.
Four, the method for inspection and inspection rule
1) junction depth; Every batch of coupongs are measured at microscopically, and the shallow benefit of junction depth expands, and exceeding standard is waste product;
2) surface concentration R: in four point probe tester measure R, the standard of not meeting is done over again; The concentration height, single face is ground to qualified: the degree of depth is low, mends the two-sided inspection of expansion and presses the horizontal IIAQL-1.0% of general survey by general inspection;
3) voltage characteristic: comprehensive parameter tester, every batch of coupongs, defective is waste product;
4) silicon chip surface state: range estimation, oxidation is done over again, cut waste product, full inspection.
Five, points for attention
1) reinforcement cleannes idea, the diffusion instrument is special-purpose without exception, regularly handles, and silicon chip cleans should not have other operation interference crucial moment, avoids staiing;
2) after the electricity cooling is closed in diffusion, be pulled to fire door, if having a power failure the constant temperature 6h that to anneal midway;
3) according to once spreading junction depth, surface concentration and monocrystal material parameter are suitably adjusted the parameter that secondary spreads, and it is good to guarantee to spread back knot sheet parameter;
4) high purity water requires: more than the 14M Ω;
5) contact to wear masks during silicon chip, gloves; Join the source, must wear masks when being coated with the source, gloves.
Claims (1)
1, the process of producing rectifier tube chip by one time coating source full spreading is characterized in that this method may further comprise the steps:
1) silicon chip cleans; Silicon chip through the lacquer that reduces internal heat, shakeout, deoil, float oxide layer, go metal ion to handle after, the silicon chip of cleaning, it is stand-by to be put in the roaster oven dry;
2) perfect diffusion;
(1) preparation;
1. prepare impurity source;
A. the preparation of aluminum nitrate-diboron trioxide solution:
In 500ml top grade absolute ethyl alcohol, put into 50 gram high pure nitric acid aluminium and the high-purity diboron trioxides of 500mg;
B. the preparation of phosphorus pentoxide ethanolic solution:
Getting the high-purity phosphorus pentoxide of 10g fully is dissolved in and becomes dense phosphorus pentoxide solution in the 200g top grade absolute ethyl alcohol;
2. prepare copper-bath: CU
2SO
4: H
2It is stand-by that O-5ml: 100ml splashes into several HF:
3. prepare corrosive liquid: press HNO
3: the preparation in 10: 1 of HF volume ratio;
4. the zinc sulfate of preparing electrolyte: 500g is dissolved in the high purity water of 2500ml;
5. clean quartzy grillage; Boil 1#.2# liquid each two times, hot and cold high purity water flushing is dried stand-by in the roaster;
6. open diffusion furnace, furnace temperature is set in 1250 ℃;
(2) be coated with impurity source; Impurity source is poured in the drop bottle, and silicon chip is placed on the interior filter paper of enamel tray; Coat 2-3 in the one side of silicon chip and drip the boron aluminum impurity source, evenly be deployed in baking (also can dry in the shade when temperature is high) 2min under the infrared lamp, the one side that will be coated with impurity source then stacks relatively; Another side is with the even boderizing of writing brush source, and the every back side all is coated with, and fitly overlays on the quartz plate boat after dried slightly, cuts or polish jade with an emery wheel compacting with silicon;
(3) diffusion; The deviation dial gauge is evenly got back to zero point gradually by negative terminal when furnace temperature rises to 1250 ℃ of given working temperatures, quartzy grillage is put into fire door gives hot 10min; Push flat-temperature zone diffusion 35-60h then, near the scheduled time, coupongs are surveyed the diffusion junction depth at any time;
(4) annealing; After junction depth reaches designing requirement, furnace temperature was reduced to 900 ℃ of constant temperature 2 hours, reduce to 300 ℃ naturally again after, quartzy grillage is pulled to fire door, take out cooling back, silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(5) the super sheet of HF; Cut off the temperature controller total power switch, treat that temperature reduces to below 300 ℃ naturally, quartzy grillage is pulled to fire door, and take out the cooling back, and silicon chip is put into the hydrofluoric acid dips of plastic spoon, ultrasonic 1h, pure water rinsing 5min;
(6) Pyrex are removed in electrolysis; Silicon chip is put into the enamel tray that fills 20% solution of zinc sulfate, energized, Push switch on the knot sheet, is just terminating at copper cash with the negative terminal of electrolysis apparatus, be immersed in the solution, Faradaic current 50-250mA, it is following for qualified to drop to 20mA gradually, two-sided one by one electrolysis, after the taking-up, high purity water flushing 2min;
(7) test; Through surface concentration R
SMeasurement, voltage characteristic are measured, junction depth is measured, and test passes is a finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101348953A CN100424836C (en) | 2006-12-20 | 2006-12-20 | Process for producing rectifier tube chip by one time coating source full spreading |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101348953A CN100424836C (en) | 2006-12-20 | 2006-12-20 | Process for producing rectifier tube chip by one time coating source full spreading |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988114A true CN1988114A (en) | 2007-06-27 |
| CN100424836C CN100424836C (en) | 2008-10-08 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102074464A (en) * | 2010-12-09 | 2011-05-25 | 西安卫光科技有限公司 | Boron-aluminum process for high-power transistor chip |
| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102983078A (en) * | 2012-12-11 | 2013-03-20 | 鞍山市华辰电力器件有限公司 | Fabrication method of rectifier diode |
| CN103227106A (en) * | 2013-04-24 | 2013-07-31 | 江阴新顺微电子有限公司 | Technique of depositing and doping Pt on semiconductor silicon wafer |
| CN104392899A (en) * | 2014-10-08 | 2015-03-04 | 程德明 | Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6190947B1 (en) * | 1997-09-15 | 2001-02-20 | Zowie Technology Corporation | Silicon semiconductor rectifier chips and manufacturing method thereof |
| US6420768B1 (en) * | 2000-12-15 | 2002-07-16 | General Semiconductor, Inc. | Trench schottky barrier rectifier and method of making the same |
| CN1713358A (en) * | 2004-06-21 | 2005-12-28 | 朋程科技股份有限公司 | Production of power diode and device thereof |
| CN1599042A (en) * | 2004-08-02 | 2005-03-23 | 无锡华普微电子有限公司 | Manufacturing method of ion implantation voltage-regulator diode chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102214570A (en) * | 2010-04-04 | 2011-10-12 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102214570B (en) * | 2010-04-04 | 2015-06-24 | 如皋市易达电子有限责任公司 | Production method of high stability trigger diode |
| CN102074464A (en) * | 2010-12-09 | 2011-05-25 | 西安卫光科技有限公司 | Boron-aluminum process for high-power transistor chip |
| CN102074464B (en) * | 2010-12-09 | 2012-11-07 | 西安卫光科技有限公司 | Boron-aluminum dispersion process for high-power transistor chip |
| CN102983078A (en) * | 2012-12-11 | 2013-03-20 | 鞍山市华辰电力器件有限公司 | Fabrication method of rectifier diode |
| CN102983078B (en) * | 2012-12-11 | 2015-07-22 | 鞍山市华辰电力器件有限公司 | Fabrication method of rectifier diode |
| CN103227106A (en) * | 2013-04-24 | 2013-07-31 | 江阴新顺微电子有限公司 | Technique of depositing and doping Pt on semiconductor silicon wafer |
| CN103227106B (en) * | 2013-04-24 | 2016-03-09 | 江阴新顺微电子有限公司 | The process of deposit and doping Pt on semi-conductor silicon chip |
| CN104392899A (en) * | 2014-10-08 | 2015-03-04 | 程德明 | Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer |
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|---|---|
| CN100424836C (en) | 2008-10-08 |
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