CN104392899A - Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer - Google Patents
Sand-blasting-free diffusion nickel plating technology of rectification monocrystalline silicon wafer Download PDFInfo
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- CN104392899A CN104392899A CN201410553398.1A CN201410553398A CN104392899A CN 104392899 A CN104392899 A CN 104392899A CN 201410553398 A CN201410553398 A CN 201410553398A CN 104392899 A CN104392899 A CN 104392899A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Abstract
Provided in the invention is a sand-blasting-free diffusion nickel plating technology of a rectification monocrystalline silicon wafer. According to the invention, the oxidation technology, the electrolysis technology, and the ultra sand coarsening technology technology are used for replacing the traditional sand blasting technology. The provided technology has advantages of energy conservation and power consumption reduction, good noise-free and dust-free properties, low production cost, and high product quality and the like and thus is the preferred one for technical transformation of the ectification monocrystalline silicon wafer diffusion nickel plating enterprise.
Description
Technical field
Rectification monocrystalline silicon piece exempts from sandblasting diffusion nickel plating technology technology, belongs in " the high-technology field catalogue that state key is supported ", electron trade green manufacturing, pollution emission reduction key technology area.
Background technology
Rectifier diode and bridge rectifier are the basic devices of electron trade, China market annual requirement tens billion of.The raw material manufacturing this series products are monocrystalline silicon pieces, adopt diffusion technology in monocrystalline silicon piece, form a PN junction, namely monocrystalline silicon piece is provided with unilateal conduction performance, defines rectification monocrystalline silicon piece, rectification monocrystalline silicon piece is cut into required area and shape, the processing process of Zai Jinghou road.Just can produce the rectifying component product of all size.
At present, the domestic master operation flow process generally manufacturing rectification monocrystalline silicon piece technique is as follows: (diameter 3 inches or 4 inches) monocrystalline silicon piece (two-sided lapping)---cleaning, one side phosphorus deposition---transoid is gone in sandblasting---cleaning, one side boron diffusion---sandblasting alligatoring---nickel plating---rectification monocrystalline silicon piece.From technological process, sandblasting operation occupies very large proportion in the technique of production rectification monocrystalline silicon piece.
Through years development, sandblast technology is also reformed, from initial artificial hand-held sand-blasting gun sandblasting, develops into and uses sand spray machine sand spray now.The main energy consumption of current domestic conventional separate unit sand-blasting machine is as follows: compressed air pressure 0.7MPa, compressed air require 10m
3/ minute; Air compressing acc power 40 kilowatts, negative-pressure air fan power 20 kilowatts, dedusting power of motor 5.5 kilowatts, conveying power of motor 0.75 kilowatt, screw motor power 0.4 kilowatt, oscillating motor power 0.4 kilowatt, counts about energy consumption 70 kilowatts.
Except the fragment that causes after huge energy consumption and monocrystalline silicon piece impact by mechanical force and stress, the vibration after air compressor starts and noise huge, all affect by it in 1 kilometer of distance; Though the sand dust of sand-blasting machine ejection is through reclaiming, the still severe overweight of the dust in ambient air, especially size at all cannot with the elimination of existing physics cleaner at the grit of below PM10, and severe contamination environment and threaten the healthy of operator.
Innovation one exempts from blasting craft, the diffusion nickel plating of rectification monocrystalline silicon piece is produced and reaches: energy-conservation, noiseless, higher without dust, product quality and full wafer rate, is original intention of the present invention.
Summary of the invention
Known from the description of background technology, removing blasting craft from has two operations to transform, comprising the sandblasting operation before the sandblasting operation after (1) phosphorus deposition procedures and (2) nickel plating process.Hereby adopt the Technical Analysis of the reason of blasting craft and transformation as follows these two operations:
(1) phosphorus deposition procedures object is thickness 12 ~ 15 microns on a deposited on silicon of n type single crystal silicon sheet, and concentration reaches 1 × 10
20/ centimetre
3phosphorous layer, for rear operation performs technique place mat in the another face diffused with boron of non-sedimentary phosphor.But, facts have proved that phosphorus deposition procedures is difficult to do perfect, non-coating cover phosphorus source another on the surface after phosphorus deposition procedures, also deposition has gone up one deck phosphorus.The reason producing this problem is under about 1200 degree of high temperature deposition conditions, phosphorus atoms gas can ooze and diffuse into another surface formation, and be edge the closer to monocrystalline silicon piece, this " transoid " phenomenon is more serious, though through adopting multiple corrective measure still can not head it off.
If do not removed the residual phosphorous layer on another surface of monocrystalline silicon piece, this surface is in rear road boron diffusion technology, boron and phosphorus these two kinds produces the contrary substance source of conduction property in same expression to monocrystalline silicon piece diffusion inside, and cannot form complete PN junction, namely product can be scrapped.So, must increase by a procedure after phosphorus deposition procedures, remain inversion layer with the phosphorus removed on non-phosphorus depositional plane.Remove phosphorus and remain that inversion layer is common three kinds of methods: polishing, etch, sand-blast.
Polishing refers to monocrystalline silicon wafer lapping machines, and the grinding of non-phosphorus depositional plane is gone 15 ~ 20 microns, and phosphorus remains inversion layer and is removed.This method is because relate to phosphorus depositional plane is pasted onto the uppity difficult problem of thickness on grinder, and some monocrystalline silicon piece amount of grinding are very large, have because of amount of grinding little, still leave phosphorus and remain inversion layer and also relate to the broken and speed of production of monocrystalline silicon piece and cross the problem such as slowly.The method is almost stopped using at home.
Etch refers to and is bonded together by the phosphorus depositional plane of two monocrystalline silicon pieces, to the method corrosion 15 ~ 20 microns of exposed two non-phosphorus depositional plane chemical corrosions, remains inversion layer to remove phosphorus.The method work efficiency is high, fragment rate is few, and shortcoming is that the lapped face that non-phosphorus depositional plane is original after chemical corrosion becomes light smoothly, and cause the boron in rear road to spread and be difficult to take source, diffusion parameter disperses, and is unfavorable for the nickel plating adhesion on this surface.The method is domestic at present also has a small amount of enterprise in use.
Sand-blast refers to and enters on the conveyer belt of sand-blasting machine by monocrystalline silicon piece, and non-phosphorus depositional plane is upward facing to blast nozzle direction, and the spray of non-phosphorus depositional plane is gone 15 ~ 20 microns by the Buddha's warrior attendant sand flow of ejection at a high speed, remains inversion layer to remove phosphorus.Because spray goes the quality of monocrystalline silicon piece more, sometimes monocrystalline silicon piece needs repeatedly to repeat through sand-blasting machine, work efficiency is also comparatively slow, and serious problem is: it is healthy that big energy-consuming, noise and vibration are large, fragment rate is high, monocrystalline silicon piece creates internal stress, serious environment pollution and threat workman by External Force Acting.The method is still adopted by most enterprise at present at home.
The present invention propose a kind of oxidation technology method substitute get rid of the post-depositional sandblasting operation of phosphorus, technological principle is: the n type single crystal silicon sheet of two-sided lapping is carried out two-sided oxidation, obtain the oxide layer of about 2 microns, then the oxide layer of any surface is removed, sedimentary phosphor in non-oxidation aspect, though under 1200 degree of high temperature deposition conditions, phosphorus atoms gas can ooze and diffuse into another surface, but because this has covering of oxide layer on the surface, phosphorus can not form deposition on this surface, after phosphorus deposition procedures terminates, oxide layer is steeped with hydrofluoric acid, just obtaining one side has phosphorus to deposit, one side is original N-type monocrystalline, two-sided still keep grind time physical state monocrystalline silicon piece, meet the quality requirement of process node.
Cover unsuccessfully for what avoid oxide layer, oxidated layer thickness after reply oxidation operation is tested, light interference method can be used, its principle is: in oxide layer, drip a upper droplet hydrofluoric acid, acid solution is constantly to surrounding flushing and to oxide layer generation corrosiveness, intermediate point loses logical at first, periphery loses the most shallow, dry after washing away fluoric acid with water, under ordinary ray, concentric irregular black and white interference fringe can be observed, every a pair black and white is an interference of light thickness, when observing 10 ~ 11 pairs of interference fringes, oxidated layer thickness is 1.9 ~ 2.0 microns, can judge that oxidated layer thickness is qualified.Interference fringe image can see Figure of description 1.
The post-depositional sandblasting operation of phosphorus is substituted by oxidation technology, every sheet monocrystalline silicon piece is by saving thickness about 20 microns, the thickness of full wafer monocrystalline silicon piece is selected between 200 ~ 260 microns according to product difference, monocrystalline silicon piece materials 7.7 ~ 10% can be saved after this just means technological innovation, not only reduce enterprise product production cost, and saved a large amount of material resources for social, meet the requirement of national energy-saving consumption reduction.
(2) after boron diffusing procedure, defined a PN junction in monocrystalline silicon lamellar body, be provided with rectification characteristic, but monocrystalline silicon piece externally to be connected, also must plate layer of metal nickel on monocrystalline silicon piece two surfaces, internal and monocrystalline silicon piece forms ohmic contact, external welding electrode lead-in wire.
Before not carrying out nickel plating process, surface treatment must be carried out to the monocrystalline silicon piece spread, after removing boron diffusion, be retained in the Pyrex on surface, and " alligatoring " process is carried out to two surfaces of monocrystalline silicon piece, make its surface presentation fresh activity, be combined better with nickel.
At present, domestic most enterprise, to removing monocrystalline silicon sheet surface Pyrex and alligatoring work before nickel plating process, all adopt blasting craft, 4 microns are about sprayed to Pyrex face, 2 microns are about sprayed to phosphorus face, monocrystalline silicon piece after sandblasting, through cleaning, enters nickel plating process.This procedure blasting craft, its shortcoming as previously mentioned.In addition, the PN layer concentration distribution features that diffusion technology is formed internally progressively reduces from the surface of monocrystalline silicon piece, the superficial layer that sandblasting is removed is all the maximum concentration layers after phosphorus, boron diffusion, the ohm resistance be combined with nickel can be increased after removal, reduce the ability that product bears surge current.
The present invention proposes a kind of electrolysis process and ultrasonic coarsing process substitutes the sandblasting operation before getting rid of nickel plating process, technological principle is: the monocrystalline silicon piece hydrofluoric acid after boron diffusion is soaked monolithic, insert in electrolysis tank, access DC power supply, monocrystalline silicon piece connects positive pole, electrolyte connects negative pole, electrolysis tank precipitation is entered after Pyrex electrolysis on monocrystalline silicon piece, obtain a boron diffusion face without Pyrex, used for electrolyte is zinc sulfate solution, in neutral, nontoxic, odorlessness during electrolysis, energy consumption about tens of watts.
Surface coarsening technique before nickel plating process, can come by the method for the water slug monocrystalline silicon piece of the super dynamic band diamond dust of ultrasonic wave, work is simple, loses surface thickness hardly, does not produce stress to monocrystalline silicon piece, can meet mass production.
In sum, rectification monocrystalline silicon piece provided by the invention exempts from sandblasting diffusion nickel plating technology, go to get replaced traditional blasting craft by oxidation technology, electrolysis process, super coarsening technique, having energy-saving and cost-reducing, noiseless, high quality low without dust, production cost, is the first-selected technique that rectification monocrystalline silicon piece diffusion nickel plating enterprise undergoes technological transformation.
Accompanying drawing explanation
Fig. 1, monocrystalline silicon piece after oxidation, drips the interference fringe picture that upper hydrofluoric acid produces.
Fig. 2, rectification monocrystalline silicon piece exempts from sandblasting diffusion nickel plating technology flow chart.
Embodiment
The technical process that rectification monocrystalline silicon piece of the present invention exempts from sandblasting diffusion nickel plating technology is: two-sided lapping n type single crystal silicon sheet (raw material), and---------open pipe phosphorus deposits, and---another face boron spreads---electrolysis Pyrex---ultrasonic coarsing---double side nickel-plated---rectification monocrystalline silicon piece (product) to go one side oxide layer in two-sided oxidation.Its technological process block-diagram is shown in Figure of description 2.This specification is only discussed emphatically to be increased or has transformed the enforcement of new technology, still needs the operation retained not to be described in traditional handicraft.
The execution mode of " two-sided oxidation technology ": the monocrystalline silicon piece of two-sided lapping, after cleaning, carry out two-sided oxidation operation, oxidizing temperature gets 1160 degrees Celsius, oxygen-supply quantity 0.8 liter/min.Logical oxygen mode: logical dry oxygen 1 hour---logical wet oxygen 4 hours---logical dry oxygen 1 hour---logical wet oxygen 4 hours---logical dry oxygen 2 hours.After oxidization time terminates, monocrystalline silicon piece cools to 500 degrees Celsius with stove, pulls out stove soon, is shaped to 10 ~ 11 through interference fringe, proves that oxidated layer thickness is 1.9 ~ 2.0 microns, belongs to qualified.
The execution mode " removing one side oxide coating process ": monocrystalline silicon piece one side is applied protecting glue, is placed in hydrofluoric acid: ammonium acid fluoride: water is the solution of weight ratio 30: 80: 100, removes oxide layer in non-protective surface in about 5 minutes.Protecting glue can take multiple material, such as vacuum wax sealing, the even common glue of acidproof glue.
The execution mode of " open pipe phosphorus depositing operation ": rotary coating phosphorus source liquid on the face of the own oxide layer of monocrystalline silicon piece, phosphorus source formula of liquid ammonium dihydrogen phosphate: pure water is weight ratio 20: 100, amounting to painting amount is phosphors coating source, every 3 inches of monocrystalline silicon pieces every face liquid 0.3 milliliter, and rotary coating speed is 30 revs/min.The monocrystalline silicon piece in phosphors coating source can be dried with hot plate or infrared lamp.Phosphorus deposition deposited tube is two end opening quartz round tube or carborundum pipe, the face, phosphorus source that has of monocrystalline silicon piece coincides, inactive face coincides, anemostat home position is placed in by built on stilts for monocrystalline silicon piece with bar type quartz boat, cvd furnace is rapidly heated from room temperature, pure air is passed in turn from deposited tube two end, throughput is 600 liters/min, two ends interval times of ventilating in turn is 10 minutes, after depositing temperature rises to 1100 degrees Celsius, throughput is adjusted to 300 liters/min, when depositing temperature rises to 1200 degrees Celsius, start phosphorus deposition maintenance 1200 degrees Celsius 2 hours, between phosphorus depositional stage, throughput progressively reduces, from 300 liters/min linearly drop to phosphorus deposition terminate 0 liter/min, two ends are constant for interval time of ventilating in turn.Phosphorus deposition terminates, and monocrystalline silicon piece cools to 500 degrees Celsius with stove, pulls out stove soon, by the oxide layer on hydrofluoric acid bubble dephosphorization silex glass and non-depositional plane.
The execution mode of " another face boron diffusion technology ": with traditional common process, illustrates slightly.
The execution mode of " electrolysis Pyrex technique ": be stained with coherent monocrystalline silicon piece after boron diffusion, monolithic is bubbled open in hydrofluoric acid, running water washes away acid solution, be placed on the tungsten bar of electrolysis tank, tungsten bar connects the positive pole of DC power supply, in groove, electrolyte connects the negative pole of DC power supply, direct voltage gets 6 ~ 12 volts, electric current is pressed the every sheet of diameter 3 inches of monocrystalline silicon pieces 10 milliamperes and is equipped with control, electrolysis time is 0.2 ~ 2 hour, the clean boron diffusingsurface of electrolysis is uniform canescence, and the formula system zinc sulfate of electrolyte: water, weight ratio is 20: 100.After electrolysis process terminates, only need wash down electrolysis and cross, lower operation can be entered.
The execution mode of " ultrasonic coarsing technique ": treat that the monocrystalline silicon piece of nickel plating is housed in fixture stand with interval, be placed in ultrasonic vibration groove, in groove, alligatoring liquid should flood monocrystalline silicon piece, the formula system M14 silicon carbide silicon carbide of alligatoring liquid: water, weight ratio is 5: 100, ultrasonic coarsing 10 minutes, the monocrystalline silicon piece pure water ultrasonic cleaning that alligatoring terminates is clean.
The execution mode of " double side nickel-plated technique ": with traditional common process, illustrates slightly.
Specification is finished.
Claims (1)
1. rectification monocrystalline silicon piece exempts from a sandblasting diffusion nickel plating technology, it is characterized in that increasing or having transformed following processing step:
Two-sided oxidation technology: the monocrystalline silicon piece of two-sided lapping, two-sided oxidation operation is carried out after cleaning, oxidizing temperature gets 1160 degrees Celsius, oxygen-supply quantity 0.8 liter/min, leads to oxygen mode: logical dry oxygen 1 hour, and------logical dry oxygen 1 hour---logical wet oxygen 4 hours---leads to dry oxygen 2 hours to logical wet oxygen 4 hours, after oxidization time terminates, monocrystalline silicon piece cools to 500 degrees Celsius with stove, pulls out stove soon, is shaped to 10 ~ 11 through interference fringe, prove that oxidated layer thickness is 1.9 ~ 2.0 microns, belong to qualified;
Remove one side oxide coating process: monocrystalline silicon piece one side is applied protecting glue, is placed in hydrofluoric acid: ammonium acid fluoride: water is the solution of weight ratio 30: 80: 100, within about 5 minutes, removes oxide layer in non-protective surface;
Open pipe phosphorus depositing operation: rotary coating phosphorus source liquid on the face of the own oxide layer of monocrystalline silicon piece, phosphorus source formula of liquid ammonium dihydrogen phosphate: pure water is weight ratio 20: 100, amounting to painting amount is phosphors coating source, every 3 inches of monocrystalline silicon pieces every face liquid 0.3 milliliter, rotary coating speed is 30 revs/min, the monocrystalline silicon piece in phosphors coating source can be dried with hot plate or infrared lamp, phosphorus deposition deposited tube is two end opening quartz round tube or carborundum pipe, the face, phosphorus source that has of monocrystalline silicon piece coincides, inactive face coincides, anemostat home position is placed in by built on stilts for monocrystalline silicon piece with bar type quartz boat, cvd furnace is rapidly heated from room temperature, pure air is passed in turn from deposited tube two end, throughput is 600 liters/min, two ends interval times of ventilating in turn is 10 minutes, after depositing temperature rises to 1100 degrees Celsius, throughput is adjusted to 300 liters/min, when depositing temperature rises to 1200 degrees Celsius, start phosphorus deposition maintenance 1200 degrees Celsius 2 hours, between phosphorus depositional stage, throughput progressively reduces, from 300 liters/min linearly drop to phosphorus deposition terminate 0 liter/min, two ends are constant for interval time of ventilating in turn, phosphorus deposition terminates, monocrystalline silicon piece cools to 500 degrees Celsius with stove, fast pull-out stove, by the oxide layer on hydrofluoric acid bubble dephosphorization silex glass and non-depositional plane,
Electrolysis Pyrex technique: be stained with coherent monocrystalline silicon piece after boron diffusion, monolithic is bubbled open in hydrofluoric acid, running water washes away acid solution, be placed on the tungsten bar of electrolysis tank, tungsten bar connects the positive pole of DC power supply, in groove, electrolyte connects the negative pole of DC power supply, direct voltage gets 6 ~ 12 volts, electric current is pressed the every sheet of diameter 3 inches of monocrystalline silicon pieces 10 milliamperes and is equipped with control, electrolysis time is 0.2 ~ 2 hour, the clean boron diffusingsurface of electrolysis is uniform canescence, the formula system zinc sulfate of electrolyte: water, and weight ratio is 20: 100;
Ultrasonic coarsing technique: treat that the monocrystalline silicon piece of nickel plating is housed in fixture stand with interval, be placed in ultrasonic vibration groove, in groove, alligatoring liquid should flood monocrystalline silicon piece, the formula system M14 silicon carbide silicon carbide of alligatoring liquid: water, weight ratio is 5: 100, ultrasonic coarsing 10 minutes, the monocrystalline silicon piece pure water ultrasonic cleaning that alligatoring terminates is clean.
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| CN107146757A (en) * | 2016-08-26 | 2017-09-08 | 扬州杰盈汽车芯片有限公司 | A kind of attached phosphorus technique of atomizing wafer |
| CN109360788A (en) * | 2018-09-19 | 2019-02-19 | 捷捷半导体有限公司 | A method of removing boron spot by the way of plasma etching |
| CN109360784A (en) * | 2018-09-13 | 2019-02-19 | 安徽钜芯半导体科技有限公司 | A method of removal chip surface Pyrex |
| CN110880449A (en) * | 2019-09-30 | 2020-03-13 | 王偲偲 | Silicon wafer cleaning method |
| CN113161230A (en) * | 2020-12-14 | 2021-07-23 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
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| CN113161230A (en) * | 2020-12-14 | 2021-07-23 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
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