CN113231727A - Electron beam multi-filament in-situ additive manufacturing component uniformity control method - Google Patents

Electron beam multi-filament in-situ additive manufacturing component uniformity control method Download PDF

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CN113231727A
CN113231727A CN202110413547.4A CN202110413547A CN113231727A CN 113231727 A CN113231727 A CN 113231727A CN 202110413547 A CN202110413547 A CN 202110413547A CN 113231727 A CN113231727 A CN 113231727A
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electron beam
beam splitting
additive manufacturing
deflection
deflection voltage
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CN113231727B (en
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都东
李自祥
张昊宇
梁志跃
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Tsinghua University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/0046Welding
    • B23K15/0086Welding welding for purposes other than joining, e.g. built-up welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

The invention relates to the technical field of additive manufacturing, and provides a method for controlling uniformity of electron beam multi-wire in-situ additive manufacturing components, which comprises the following steps: applying deflection voltage signals to an X-axis deflection coil and a Y-axis deflection coil in an electron gun to deflect the whole electron beam to form an electron beam main beam and an electron beam splitting beam which work alternately; adjusting beam splitting parameters of electron beam by controlling deflection voltage signalR≥TK(ii) a Wherein the beam splitting parameters of the electron beam include beam splitting number N, deflection distance D of each beam splitting and energy W, T of each beam splittingRFor times above the melting point of the alloy being prepared during additive manufacturing, TKThe diffusion time required for the metal droplets of each wire for preparing the alloy to completely and uniformly diffuse from mutual initial contact. The invention effectively ensures the full diffusion among metal drops of each wire, eliminates the phenomenon of macroscopic unevenness of components, and improves the forming quality of the prepared partsAmount and mechanical properties.

Description

Electron beam multi-filament in-situ additive manufacturing component uniformity control method
Technical Field
The invention relates to the technical field of additive manufacturing, in particular to a method for controlling uniformity of electron beam multi-wire in-situ additive manufacturing components.
Background
As an advanced processing mode, the additive manufacturing technology has the advantages of short production period, high material utilization rate and high design flexibility, and the technology is rapidly developed in the past decades. Additive manufacturing techniques are classified into laser additive manufacturing techniques, electron beam additive manufacturing techniques, and arc additive manufacturing techniques according to a difference in heat source. The electron beam additive manufacturing technology is an additive manufacturing mode which takes high-energy electron beams as a heat source and takes wire materials as consumables, and the principle is that electrons bombard the surface of metal under the action of an accelerating electric field, so that the huge kinetic energy of the electrons is converted into heat energy, and the purpose of melting the wire materials is achieved. Compared with other additive manufacturing technologies, the electron beam additive manufacturing technology has the advantages of good mechanical property, high deposition efficiency and high energy utilization rate, and has great application prospect in the field of aerospace.
In recent years, as the technology of electron beam single fuse forming prealloying is matured, the technology of in-situ additive manufacturing based on electron beam double fuses or even multiple fuses has shown great advantages in the in-situ preparation of gradient materials and multi-component alloys. The basic principle is that in the additive manufacturing process, elements of a multi-element alloy or gradient material to be prepared are respectively sent into a molten pool in a pure wire material or alloy mode, and the purpose of in-situ preparation of the material is achieved by coordinating the wire feeding speed ratio of each wire material. The technology can realize the integration of in-situ preparation of materials and part structure manufacturing, so that the processing period can be shortened to a great extent and the processing cost can be reduced, and the technology is particularly suitable for the traditional hard-to-process brittle materials, namely hard-to-filamentation additive manufacturing.
However, the fast cooling speed in the additive manufacturing technology makes it difficult for the metal droplets of each wire to fully react in a short time under the natural diffusion condition to produce the alloy to be prepared, i.e. the metal droplets are not fully reacted but are cooled and formed. Therefore, the additive manufacturing in-situ prepared alloy often has the phenomenon of macro-unevenness of components, and the macro-unevenness of the components easily causes stress concentration in the alloy, so that the poor mechanical property is caused, and the service life of the prepared part is further reduced.
Disclosure of Invention
The invention provides a component uniformity control method for electron beam multi-wire in-situ additive manufacturing, which is used for solving the problem of macro-non-uniform component in an alloy prepared in the prior art so as to improve the forming quality and mechanical property of in-situ additive manufacturing parts.
The invention provides a method for controlling the uniformity of electron beam multi-filament in-situ additive manufacturing components, which comprises the following steps:
s1, applying deflection voltage signals to the X-axis deflection coil and the Y-axis deflection coil in the electron gun to deflect the whole electron beam to form an electron beam main beam and an electron beam splitting beam which work alternately;
s2, adjusting beam splitting parameters by controlling the deflection voltage signal to enable TR≥TK(ii) a Wherein the beam splitting parameters include beam splitting number N and deflection distance D (D)1,D2…DN) And each split energy W (W)1,W2…WN),TRFor times above the melting point of the alloy being prepared during additive manufacturing, TKThe diffusion time required for the metal droplets of each wire for preparing the alloy to completely and uniformly diffuse from mutual initial contact.
According to the method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing components, the step of adjusting beam splitting parameters of the electron beam by controlling the deflection voltage signal specifically comprises the following steps:
the number of deflection voltage values in a single period in the deflection voltage signal corresponds to the beam splitting number N, the magnitude of the deflection voltage value corresponds to the beam splitting deflection distance D of the corresponding electron beam splitting, and the duty ratio of the deflection voltage value corresponds to the beam splitting energy W of the corresponding electron beam splitting.
According to the method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing components, the step that the duty ratio of the deflection voltage value corresponds to the beam splitting energy W of the corresponding electron beam splitting specifically comprises the following steps:
heating each electron beam split by adjusting duty cycle of each deflection voltage value in the deflection voltage signalThe input energy is distributed in the following mode: the total electron beam energy of the heat input is Va*IbIf the period of the deflection voltage signal is T, the beam splitting energy W of the Nth electron beam is:
W=Va*Ib*TN/T,
wherein, VaAcceleration voltage for the entire electron beam, IbFor the beam current of the whole electron beam, TNThe deflection voltage value time length of the beam splitting of the Nth electron beam.
According to the method for controlling the uniformity of the components in the electron beam multi-filament in-situ additive manufacturing, when the beam splitting number N is infinite, the beam splitting of the electron beam is in a line scanning mode, the deflection voltage signal is a continuous voltage signal, and the time T is regulated and controlled in the line scanning modeR
According to the electron beam multi-filament in-situ additive manufacturing component uniformity control method provided by the invention, the frequency f of the deflection voltage signal satisfies f >100 Hz.
According to the electron beam multi-filament in-situ additive manufacturing component uniformity control method provided by the invention, the proportion of the energy of the electron beam main beam in the whole electron beam energy is more than 50%.
According to the method for controlling the component uniformity in the electron beam multi-filament in-situ additive manufacturing, the beam splitting deflection distance D of the beam splitting of the electron beam is +/-5-30 mm.
According to the electron beam multi-filament in-situ additive manufacturing component uniformity control method provided by the invention, the deflection voltage signal is a pulse signal.
According to the method for controlling the component uniformity in electron beam multi-wire in-situ additive manufacturing, provided by the invention, the multi-wire specifically comprises double-wire, three-wire and more than three wire materials, the wire materials are pure metal wire materials or alloy wire materials, and the diameter range of the wire materials is 0.8-3.0 mm.
According to the method for controlling the component uniformity in the electron beam multi-wire in-situ additive manufacturing, provided by the invention, the in-situ additive manufacturing refers to the in-situ generation of a target alloy in the same molten pool by utilizing a plurality of different wires.
According to the method for controlling the uniformity of the electron beam multi-wire in-situ additive manufacturing components, the deflection voltage signal is applied to generate electron beam splitting, the deflection voltage signal is adjusted to adjust three parameters of the number N of the electron beam splitting, the beam splitting deflection distance D and the beam splitting energy W, the temperature field distribution in the additive manufacturing process can be further adjusted, and the temperature time T above the melting point of the prepared alloy is prolongedRWindow of TRGreater than the actual diffusion time TKThe method effectively ensures the sufficient diffusion among metal drops of each wire, eliminates the phenomenon of macroscopic unevenness of components, and improves the forming quality and the mechanical property of the prepared part.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
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In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an electron beam additive manufacturing apparatus provided by the present invention;
FIG. 2 is a schematic view of the deflection of an electron beam provided by the present invention;
FIG. 3 is a flow chart of a method for controlling uniformity of components in electron beam multi-filament in situ additive manufacturing provided by the present invention;
FIG. 4 is one of temperature cycle graphs of the electron beam multi-filament in-situ additive manufacturing composition uniformity control method provided by the present invention;
FIG. 5 is a second temperature cycle graph of the electron beam multi-filament in-situ additive manufacturing composition uniformity control method provided by the present invention;
FIG. 6 is a third temperature cycle plot of the electron beam multi-filament in-situ additive manufacturing composition uniformity control method provided by the present invention;
FIG. 7 is a waveform diagram of a deflection voltage signal of an electron beam provided by the present invention;
reference numerals:
1: an electron gun; 2: a filament; 3: a biasing cup; 4: an anode; 5: a focusing coil; 6: an X-axis deflection coil; 7: a Y-axis deflection coil; 8: a wire feeder; 9: splitting the electron beam; 10: a main beam of electron beams; 11: forming a part; 12: a work table; 13: a vacuum chamber; 14: a waveform generator; 15: and (5) controlling the system.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. Specific meanings of the above terms in the embodiments of the present invention can be understood in specific cases by those of ordinary skill in the art.
In embodiments of the invention, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of an embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
In order to better understand the technical solution of the method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing composition according to the present invention, first, a corresponding electron beam additive manufacturing apparatus is described, and since the electron beam additive manufacturing apparatus is a conventional device in the art, the following generally describes the composition thereof with reference to fig. 1. The electron beam additive manufacturing apparatus mainly includes a vacuum chamber 13, an electron gun 1, a wire feeder, a waveform generator 14, a control system 15, and the like. Wherein, a workbench 12 is arranged in the vacuum chamber 13 and is used for providing a vacuum environment for preparing alloy by additive manufacturing and forming; an electron gun 1 is disposed at an upper portion of the vacuum chamber 13, and the electron gun 1 mainly includes a filament 2, a bias cup 3, an anode 4, a focus coil 5, an X-axis deflection coil 6, and a Y-axis deflection coil 7. The filament 2 generates a large amount of free electrons to form an electron beam after being applied with a high-voltage power supply, the generated electron beam enters the focusing coil 5 after passing through the bias cup 3 and the anode 4, and the focusing coil 5 focuses the electron beam to a molten pool of the additive manufacturing part.
The wire feeder mainly comprises two wire feeders 8, associated accessories and wires. In addition, the substrate of the formed part 11 is mounted on the table 12 by bolts, and the whole additive manufacturing process is performed in the vacuum chamber 13, and the formed part 11 may be a multi-component alloy or a gradient material.
The waveform generator 14 is respectively connected with the X-axis deflection coil 6 and the Y-axis deflection coil 7, the control system 15 is connected with the waveform generator 14, the waveform generator 14 controlled by the control system 15 can apply corresponding deflection voltage signals to the X-axis deflection coil 6 and the Y-axis deflection coil 7, the beam splitting deflection distance D can be adjusted by adjusting the deflection voltage value in the deflection voltage signals, the beam splitting energy W can be adjusted by adjusting the duty ratio of related deflection voltage values, and the beam splitting quantity N can be adjusted by adjusting the number of related deflection voltage values. The whole electron beam in the electron gun 1 can be deflected under the action of the X-axis deflection coil 6 and the Y-axis deflection coil 7 to form a main beam 10 and a beam splitting beam 9. It should be understood that when no deflection voltage signal is applied, the entire electron beam is the main electron beam 10, and when a deflection voltage signal is applied, it is equivalent to deflecting the initial main electron beam 10 to form the main electron beam 10 and the electron beam splitter 9 which operate alternately.
As shown in fig. 2, when the whole electron beam is deflected, the electron beam splitting 9 is offset from, e.g. behind, the position of the electron beam main beam 10, and it is understood that the beam splitting deflection distance D is the distance between the electron beam main beam 10 and the scanning point of the electron beam splitting 9.
The electron beam multi-filament in-situ additive manufacturing composition uniformity control method provided by the invention is described below, and the control method described below and the manufacturing equipment described above can be correspondingly referred to each other. The multi-wire in-situ additive manufacturing means that a plurality of different wire materials are used for generating a multi-element target alloy to be prepared in situ in the same molten pool, and a gradient material can also be manufactured. Moreover, the method is not limited to the number of wire materials, and can be used for double-wire, three-wire or even multi-wire electron beam in-situ additive manufacturing. As shown in fig. 3, the method for controlling uniformity of components in electron beam multi-filament in-situ additive manufacturing provided by the present invention mainly includes the following steps.
And S1, applying deflection voltage signals to the X-axis deflection coil and the Y-axis deflection coil in the electron gun to deflect the whole electron beam to form an electron beam main beam and an electron beam splitting beam which work alternately.
S2, adjusting by controlling the deflection voltage signalSaving beam splitting parameters to let TR≥TKWherein the beam splitting parameters include beam splitting number N and deflection distance D (D)1,D2…DN) And each split energy W (W)1,W2…WN),TRFor times above the melting point of the alloy being prepared during additive manufacturing, TKThe diffusion time required for the metal droplets of each wire for preparing the alloy to completely and uniformly diffuse from mutual initial contact.
The invention generates electron beam splitting by applying a deflection voltage signal, adjusts three parameters of the number N of the electron beam splitting, the beam splitting deflection distance D and the beam splitting energy W by controlling the deflection voltage signal, can further adjust the temperature field energy distribution in the additive manufacturing process, and prolongs the temperature time T above the melting point of the prepared alloyRWindow of TRGreater than the actual diffusion time TKThe method effectively ensures the sufficient diffusion among metal drops of each wire, eliminates the phenomenon of macroscopic unevenness of components, and improves the forming quality and the mechanical property of the prepared part.
Specifically, the step of adjusting beam splitting parameters of the electron beam by controlling the deflection voltage signal comprises: the number of deflection voltage values in a single period in the deflection voltage signal corresponds to the number N of beam splitting, i.e. the number of beam splitting matches the number of deflection voltage values in the deflection voltage signal the same, and when the number of beam splitting needs to be adjusted, the number of deflection voltage values in the deflection voltage signal is correspondingly adjusted.
The deflection voltage value corresponds to the beam splitting deflection distance D of the corresponding electron beam splitting, the deflection principle of the electron beam is that Lorentz force action of electrons in a magnetic field is utilized, so the deflection voltage value of a deflection voltage signal represents the deflection distance of the electron beam, when the deflection voltage value is zero, the electron beam does not deflect, the actual deflection voltage value is determined according to the actual beam splitting deflection distance, and the calculation process of the deflection voltage value and the deflection distance is the conventional technology in the field.
The duty cycle of the deflection voltage value corresponds to the beam splitting energy W of the corresponding electron beam splitting, and specifically comprises the following steps: by adjusting deflection voltage signalsThe duty ratio of each deflection voltage value can distribute heat input energy to each electron beam splitting, and the distribution mode is as follows: the total electron beam energy of the heat input is Va*IbIf the period of the deflection voltage signal is T, the beam splitting energy W of the Nth electron beam is:
W=Va*Ib*TN/T,
wherein, VaAcceleration voltage for the entire electron beam, IbFor the beam current of the whole electron beam, TNThe deflection voltage value time length of the beam splitting of the Nth electron beam.
Therefore, the beam splitting parameters of the electron beams can be adjusted correspondingly by adjusting the deflection voltage signals, in other words, when the material additive manufacturing is carried out, a correspondingly matched deflection voltage signal waveform can be designed according to the beam splitting parameters of the electron beams.
It should be noted that, when the beam splitting parameters: after the beam splitting quantity N, the beam splitting deflection distance D and the beam splitting energy W are determined, simulation software can be adopted to simulate the temperature time T which is above the melting point of the prepared alloy in the actual additive manufacturing processRThe simulation process is a technique in the art and will not be described in detail here.
In one embodiment, the temperature field simulation is carried out by ABAQUS finite element software according to actually selected electron beam splitting parameters, the stacking layer number of a specific simulation forming part is ten layers, when no deflection voltage signal is applied, namely electron beam splitting is not adopted, the thermal cycle of a certain point of the ten layers is shown in figure 4, and due to the remelting effect in the additive manufacturing process, when the current layer is printed, the next layer can be remelted, namely, when the temperature of the point of the current layer and the temperature of the next layer are above the melting point, element diffusion and metallurgical reaction can occur, so that the time T when the temperature of the point of the current layer is above the melting pointRValue of Δ t1And Δ t2And the sum, as shown in fig. 5. However, due to the extremely high cooling speed in the additive manufacturing process, the metal liquid drops of the wire are not fully reacted and are cooled and formed, and T is formed when electron beam splitting is not adoptedRThe values are difficult to satisfy:
TR≥TK
the components of the parts prepared at this time are often non-uniform, resulting in poor mechanical properties of the formed parts.
The specific thermal cycle at this point when applying a deflection voltage signal to produce electron beam splitting is shown in FIG. 6, and comparing FIGS. 5 and 6 yields Δ t1And Δ t2Is significantly lengthened, thereby increasing TRI.e. the cooling time of the melt pool in the additive manufacturing process is extended. Therefore, the invention can adjust the energy distribution of the temperature field in the additive manufacturing process by adjusting the beam splitting quantity N, the beam splitting energy W and the beam splitting deflection distance D, and prolong the temperature time T above the melting point of the prepared alloyRWindow, can completely make TRA value greater than the diffusion time T required for the alloy to be preparedKThereby ensuring the uniformity of the alloy composition.
The diffusion time T isKCan be determined from empirical values of actual tests or simulation values of simulation software, ABAQUS finite element software, and simulation process, wherein the diffusion time T is known in the artKThe method is mainly comprehensively influenced by the wire feeding speed, the physical properties of the alloy and the scanning speed, and particularly, the wire feeding speed and the scanning speed are high, the diffusion time is long, the physical coefficient of the alloy is mainly the diffusion coefficient of alloy elements, the diffusion coefficient is larger, the diffusion is faster, and the diffusion time is shorter, which is not described in detail herein.
It is understood that when the diffusion time T is obtainedKThen, the diffusion time T can be usedKSelecting the condition satisfying T through ABAQUS finite element software simulationR≥TKConditioned deflection voltage signal and then adjusting the corresponding beam splitting parameters. The simulation process is well known in the art and mainly comprises the following steps: according to diffusion time TKSimulating and determining the total energy of the temperature field in the additive manufacturing process, performing beam splitting distribution of electron beams according to the total energy of the temperature field, wherein the distribution requirements of specific numerical values of the beam splitting quantity N, the beam splitting deflection distance D and the beam splitting energy W related to the total energy of the temperature field are as follows: the sum of the total energy of the electron beam and the energy of the main beam of the electron beam is equal to the total energy of the temperature field and is full ofFoot TR≥TK. For example, T when the total energy of the temperature field is 100kJR≥TKAt this time, the energy of the main beam of the electron beam may be allocated to 60kJ or other values, the total beam splitting energy of the electron beam is allocated to 40kJ, and then the total beam splitting energy of the electron beam is allocated, for example, the total beam splitting energy of the electron beam may be divided into four beams, each beam being 10kJ, or may be divided into five beams, each beam being 8kJ, and the specific allocation is not particularly limited, so that the total beam splitting energy of the electron beam is satisfied.
In one embodiment, when the number of beam splitting N is infinite, the electron beam splitting is in a continuous scanning mode, i.e., a line scanning mode, and the deflection voltage signal is a continuous voltage signal, and the deposited layer is line-scanned by applying a continuous deflection voltage value through the electron beam splitting, so that the time T can be prolongedR. It is understood that, within the allowed deflection range, when the number of split beams N is infinite, the deflection voltage signal is a sine wave signal or a cosine wave signal.
In one embodiment, the selected beam splitting is a dual electron beam, comprising a main electron beam and a split electron beam, and the deflection voltage signal is a pulse signal, in particular a dc pulse voltage signal, as shown in fig. 7, wherein the base voltage V isbThe value is zero, i.e. the deflection voltage value is zero, the base voltage duty cycle represents the ratio of the energy of the main beam of the electron beam to the total beam energy, and the peak voltage value VpThe peak voltage duty ratio represents the ratio of the beam splitting energy of the electron beam to the total electron beam energy, which is determined according to the beam splitting deflection distance D.
According to the embodiment of the invention, on the basis that the whole electron beam meets the heat input energy in the additive manufacturing process, the frequency f of deflection voltage signals applied to the X-axis deflection coil and the Y-axis deflection coil needs to meet f >100Hz so as to avoid the wire sticking phenomenon that the wire is not melted into a molten pool.
According to the embodiment of the invention, the ratio of the main beam energy of the electron beam to the total electron beam energy is more than 50% to ensure the normal melting of the wire. And the beam splitting deflection distance D of the electron beam splitting is +/-5-30 mm, wherein +/-represents the direction deflected forwards or backwards by taking the electron beam main beam as a starting point, and the actual selection needs to be expanded according to the requirementScattering time TKAnd (4) determining.
According to the embodiment of the invention, the wire is a pure metal wire or an alloy wire, and the diameter range of the wire is 0.8-3.0 mm.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. The method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing components is characterized by comprising the following steps of:
s1, applying deflection voltage signals to the X-axis deflection coil and the Y-axis deflection coil in the electron gun to deflect the whole electron beam to form an electron beam main beam and an electron beam splitting beam which work alternately;
s2, adjusting beam splitting parameters by controlling the deflection voltage signal to enable TR≥TK(ii) a Wherein the beam splitting parameters include beam splitting number N and deflection distance D (D)1,D2…DN) And each split energy W (W)1,W2…WN),TRFor times above the melting point of the alloy being prepared during additive manufacturing, TKThe diffusion time required for the metal droplets of each wire for preparing the alloy to completely and uniformly diffuse from mutual initial contact.
2. The method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing composition according to claim 1, wherein the step of adjusting beam splitting parameters of the electron beam by controlling the deflection voltage signal comprises:
the number of deflection voltage values in a single period in the deflection voltage signal corresponds to the beam splitting number N, the magnitude of the deflection voltage value corresponds to the beam splitting deflection distance D of the corresponding electron beam splitting, and the duty ratio of the deflection voltage value corresponds to the beam splitting energy W of the corresponding electron beam splitting.
3. The method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing composition according to claim 2, wherein the step of the duty cycle of the deflection voltage value corresponding to the beam splitting energy W of the corresponding electron beam splitting specifically comprises:
heat input energy distribution is carried out on each electron beam split by adjusting the duty ratio of each deflection voltage value in the deflection voltage signal, and the distribution mode is as follows: the total electron beam energy of the heat input is Va*IbIf the period of the deflection voltage signal is T, the beam splitting energy W of the Nth electron beam is:
W=Va*Ib*TN/T,
wherein, VaAcceleration voltage for the entire electron beam, IbFor the beam current of the whole electron beam, TNThe deflection voltage value time length of the beam splitting of the Nth electron beam.
4. The method according to claim 1, wherein the electron beam is split into line scan mode when the number of split beams is infinite, and the deflection voltage signal is a continuous voltage signal, and the time T is adjusted and controlled by the line scan modeR
5. The method of claim 1, wherein the frequency f of the deflection voltage signal satisfies f >100 Hz.
6. The method of claim 1, wherein the ratio of the main beam energy of the electron beam to the total electron beam energy is greater than 50%.
7. The method for controlling the uniformity of the electron beam multi-filament in-situ additive manufacturing components according to claim 1, wherein a beam splitting deflection distance D of the electron beam splitting is in a range of ± (5-30) mm.
8. The method of claim 1, wherein the deflection voltage signal is a pulse signal.
9. The method for controlling the uniformity of components in electron beam multi-wire in-situ additive manufacturing of claim 1, wherein the multi-wire comprises two, three or more wires, wherein the wires are pure metal wires or alloy wires, and the diameter of the wires ranges from 0.8 mm to 3.0 mm.
10. The method for controlling the uniformity of components in electron beam multi-wire in-situ additive manufacturing according to any one of claims 1-9, wherein the in-situ additive manufacturing refers to in-situ generation of a target alloy in a same molten pool by using a plurality of different wires.
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CN114273768A (en) * 2022-01-19 2022-04-05 哈尔滨工业大学 Electron beam multi-filament collaborative additive manufacturing device and method
CN115383273A (en) * 2022-08-19 2022-11-25 清华大学 Metallurgy time length closed-loop control method and system for electron beam multi-fuse in-situ additive manufacturing
CN115533120A (en) * 2022-10-17 2022-12-30 南京联空智能增材研究院有限公司 Material increasing method for titanium alloy double-beam electron beam double-wire with bionic structure

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