CN113231705A - Method for compounding chromium target and copper back plate for sputtering coating - Google Patents

Method for compounding chromium target and copper back plate for sputtering coating Download PDF

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CN113231705A
CN113231705A CN202110548651.4A CN202110548651A CN113231705A CN 113231705 A CN113231705 A CN 113231705A CN 202110548651 A CN202110548651 A CN 202110548651A CN 113231705 A CN113231705 A CN 113231705A
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chromium target
temperature
back plate
nickel
copper
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CN113231705B (en
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杨懿
杨荣春
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Shanghai Boyi Metal Co ltd
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Shanghai Boyi Metal Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3033—Ni as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The application relates to the technical field of sputtering target welding, and particularly discloses a method for compounding a chromium target and a copper back plate for sputtering coating. The technical key points are as follows: a method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps: laying a nickel-based amorphous strip between a chromium target and a copper back plate; putting the chromium target material and the copper back plate into a brazing furnace, and vacuumizing to 5 x 10‑3Pa, brazing; the melting point of the nickel-based amorphous ribbon is 950 ℃; the brazing step comprises the following steps: uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, then heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, and finally uniformly cooling to room temperature within 4 h. Composite binding provided by the applicationThe target assembly obtained by the method is not easy to miss, high in bonding rate and small in appearance defect.

Description

Method for compounding chromium target and copper back plate for sputtering coating
Technical Field
The application relates to the technical field of sputtering target welding, in particular to a method for compounding a chromium target and a copper back plate for sputtering coating.
Background
Sputtering coating is a technique of bombarding the surface of a target material by using charged particles in vacuum to deposit the bombarded particles on a substrate.
In general, a target assembly is composed of a target (target blank) having a composite sputtering performance and a backing plate bonded to the target and having a certain strength. The backing plate plays a supporting role in assembling the target assembly into the sputtering base station and has the effect of conducting heat. While the targetThe welding between the material and the back plate is a very critical process in the production process of the target assembly, and different targets need different welding modes for welding. Taking the welding between the chromium target and the copper backing plate as an example, the expansion coefficient of copper is 17.7 x 10- 8M/deg.C, the coefficient of expansion of chromium is 6.2X 10-6M/DEG C, the difference between the two is very large, if the two are directly compounded, bound and welded, the bonding and sealing part between the two is easy to crack, so that the connection and sealing are damaged, and particularly under the condition of high temperature and high pressure, serious accidents are caused by the crack leakage.
In the related technology, indium is adopted as an intermediate substance for composite binding, but the melting point of indium is low (156 ℃), and when the indium is subjected to composite binding, heat conduction is easily blocked due to slight air bubbles between the target material and the back plate, the surface temperature of the target material is rapidly increased, and the indium is melted to cause off-target. The normal working temperature of the target surface is generally 300-400 ℃, and the extreme temperature can reach 850 ℃. Because the cooling water flows under the copper back plate, the copper back plate can be used reluctantly. However, if the water flow of the cooling water is slightly slow or the temperature of the target surface is excessively fast, the target is easy to miss, and the indium is a rare metal and is expensive, so that the production cost is greatly increased.
In view of the above-mentioned related technologies, the inventors believe that indium is used as an intermediate solder to perform composite binding of the chromium target and the copper backing plate, and the obtained target assembly is prone to miss due to overhigh temperature of the use environment during use.
Disclosure of Invention
In order to ensure that the target assembly is not easy to miss in the using process and make up the defect of easy miss due to low indium melting point, the application provides a method for compounding the chromium target for sputtering coating and the copper back plate.
The application provides a method for compounding a chromium target and a copper back plate for sputtering coating, which adopts the following technical scheme:
a method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
a method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
laying a nickel-based amorphous strip between a chromium target and a copper back plate;
putting the chromium target material and the copper back plate into a brazing furnace, and vacuumizing to 5 x 10-3Pa, brazing;
the melting point of the nickel-based amorphous ribbon is 950 ℃;
the brazing step comprises the following steps: uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, then heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, and finally uniformly cooling to room temperature within 4 h.
By adopting the technical scheme, because the melting point of indium is low, the indium is used as intermediate solder for carrying out composite binding of the chromium target and the copper back plate, the obtained target assembly is used in a high-temperature environment, and is easy to cause off-target.
In addition, chromium can be evaporated at high temperature and under vacuum, argon is filled when the furnace temperature reaches 500-800 ℃, the argon is filled until the pressure in the furnace is balanced with the atmosphere, and then the temperature is raised to 950 ℃, so that the process suppresses the trace evaporation of copper at the temperature, ensures that the product quality is not lost, and improves the product percent of pass.
Further preferably, the chromium target and the copper back plate are subjected to surface cleaning by alcohol before the nickel-based amorphous ribbon is laid.
By adopting the technical scheme, the surfaces of the target and the back plate are cleaned by adopting alcohol, so that oil stains on the surfaces of the target and the back plate can be removed, the surfaces of the target and the back plate are kept clean, and the normal operation of the subsequent brazing step is facilitated.
Further preferably, the nickel-based amorphous strip is cut before being laid, the shape of the nickel-based amorphous strip is the same as that of the chromium target, and the chromium target is circular, elliptical, square, triangular or irregular in shape.
By adopting the technical scheme, the nickel-based amorphous belt is trimmed to adapt to the shape and size of the chromium target, and after the chromium target is combined and bound with the copper back plate, gaps are not easy to appear on the periphery of the chromium target, so that heat can be quickly and uniformly conducted when the target is subjected to sputtering coating.
More preferably, the thickness of the nickel-based amorphous ribbon is 0.04 to 0.08 mm.
By adopting the technical scheme, the thickness of the nickel-based amorphous ribbon is controlled within a certain range, after brazing, gaps are not easy to appear at the peripheries of the chromium target and the copper back plate, no air bubbles exist in the middle of the chromium target, the bonding strength between the chromium target and the copper back plate is high, and heat can be conducted quickly and uniformly during use.
More preferably, in the brazing step, after the temperature is reduced to 950 ℃, the temperature is maintained for 30min, and then the temperature is reduced to room temperature.
By adopting the technical scheme, the expansion coefficient of copper is 17.7 x 10-8M/DEG C, the coefficient of expansion of chromium is 6.2 x 10-6M/DEG C, the difference between the two is great, when the temperature rises to 1062 ℃, the temperature is directly reduced to room temperature, the peripheral gap is easily generated due to expansion and contraction after the chromium and the copper are combined, the temperature is reduced to 950 ℃ firstly, the temperature is kept for 30min when the solder is not completely solidified, and the copper expanded and extended out when the copper back plate is at 1062 ℃ is waited to slowly and gradually shrink back, so that the generation of the peripheral gap after the chromium and the copper are combined is avoided.
More preferably, in the brazing step, the temperature is raised to 1062 ℃, and part of argon is uniformly pumped out within 2min of heat preservation, so that the vacuum degree is 0.002 MPa.
By adopting the technical scheme, the molten nickel-based amorphous ribbon solder is positioned between the chromium target material and the copper back plate, and the solder positioned in the middle is not easy to flow under the condition of no external factor interference, so that bubbles between the chromium target material and the copper back plate are not easy to escape. This application is through when rising to 1062 ℃, keeping warm for 2min, evenly takes off partial argon for the bubble is slowly extruded, thereby makes between chromium target and the copper backplate bubble-free production.
In summary, the present application has the following beneficial effects:
(1) according to the method, a nickel-based amorphous band with a melting point of 950 ℃ is adopted to replace indium to serve as an intermediate solder, so that the target material assembly after composite binding can not miss a target after continuously working for more than 8 hours in an environment of 950 ℃;
(2) according to the method, the heat is preserved for 30min in the cooling stage, so that the target and the back plate with greatly different expansion coefficients do not have gaps at the periphery after the target and the back plate are combined and bound, the defects of a target assembly are reduced, and the qualified rate is improved;
(3) this application is through keeping warm in the intensification stage and extracting partial argon gas for target and backplate are after compound binding, and wherein the difficult bubble gap that appears reduces the defect of target subassembly, improves the qualification rate.
Drawings
FIG. 1 shows the vacuum degree of 5 x 10 for the red copper backing plate and the chromium target in the first test of the present application-3An appearance diagram of a vacuum furnace with Pa after heating at 1068 ℃;
FIG. 2 is an external view of a red copper backing plate and a chromium target material heated to 1072 ℃ in a vacuum furnace with a vacuum degree according to a first test of the present application;
FIG. 3 is a graph of the temperature increase in the brazing step in examples 1 to 3 of the present application, wherein the abscissa is time in units of: h, ordinate is temperature, unit: DEG C;
fig. 4 is an appearance diagram of a chromium target and a copper backing plate after being compositely bound in embodiment 3 of the present application;
fig. 5 is an appearance diagram of a welding surface of a chromium target after the chromium target is combined and bound with a copper backing plate and then cut in example 3 of the present application;
FIG. 6 is a graph of temperature increase in the brazing step of examples 4 to 5 of the present application, wherein the abscissa is time in units of: h, ordinate is temperature, unit: DEG C;
fig. 7 is an appearance diagram of a chromium target and a copper backing plate after being compositely bound in embodiment 4 of the present application;
fig. 8 is an appearance diagram of the chromium target and the copper backing plate after being compositely bound in embodiment 5 of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples.
The nickel-based amorphous ribbon solder in the application is purchased from a Shanghai Dahua novel fiber welding material factory, the grade of the nickel-based amorphous ribbon solder is DHNi-C, and the nickel-based amorphous ribbon solder is equivalent to the domestic grade of BNi82CrSiBFe, and comprises the following chemical components: less than or equal to 1 percent of Co, 6-8 percent of Cr, 4-5 percent of Si, 2.75-3.5 percent of B, 2.5-3.5 percent of Fe2, less than or equal to 0.06 percent of C, less than or equal to 0.02 percent of P, and the balance of Ni.
Testing one: melting point test of red copper back plate in vacuum
Placing the red copper back plate and the chromium target material which are combined and bound into a vacuum degree of 5 x 10-3Pa, was heated to 1068 ℃ in a vacuum furnace, and the temperature was observed as shown in FIG. 1, and was then heated to 1078 ℃ and the temperature was observed as shown in FIG. 2.
As can be seen from fig. 1, when the temperature reaches 1068 ℃, the red copper back plate starts to melt; as can be seen from fig. 2, when the temperature reaches 1078 ℃, the red copper backing plate is completely melted, so that it can be determined that the maximum temperature of the composite binding between the copper backing plate and the chromium target material is not higher than 1068 ℃.
And (2) testing: fluidity test of nickel-based amorphous ribbon solder
And (3) putting the nickel-based amorphous ribbon solder into a vacuum furnace, heating to 950 ℃, and melting the nickel-based amorphous ribbon solder with good repeatability. Therefore, the melting point of the nickel-based amorphous ribbon solder can be determined to be 950 ℃.
Examples
Example 1
A method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
s1, taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target with the diameter of 300 mm and the thickness of 12mm, trimming and splicing a nickel-based amorphous strip with the thickness of 0.03mm into a size with the diameter of 312mm, and uniformly paving the nickel-based amorphous strip between the copper back plate and the chromium target;
s2, placing the copper back plate and the chromium target material which are clamped with the nickel-based amorphous ribbon into a vacuum brazing furnace, closing the furnace door, and vacuumizing to 5 x 10-3Pa；
S3, uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the temperature of the furnace at positive pressure, heating to 950 ℃ within 1h, keeping the temperature for 30min, heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, uniformly cooling to 20 ℃ within 4h along with the temperature of the furnace, and keeping the temperature rise curve as shown in figure 3;
and S4, opening the furnace door after the temperature in the vacuum brazing furnace is reduced to 20 ℃ at room temperature, and taking out the chromium target and the copper back plate after composite binding.
Example 2
A method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
s1, taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target with the diameter of 300 mm and the thickness of 12mm, trimming and splicing a nickel-based amorphous strip with the thickness of 0.04mm into a nickel-based amorphous strip with the diameter of 310mm, and uniformly paving the nickel-based amorphous strip between the copper back plate and the chromium target;
s2, placing the copper back plate and the chromium target material which are clamped with the nickel-based amorphous ribbon into a vacuum brazing furnace, closing the furnace door, and vacuumizing to 5 x 10-3Pa；
S3, uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure in the furnace, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, uniformly cooling to 20 ℃ within 4h with the temperature in the furnace, and keeping the temperature rise curve as shown in figure 3;
and S4, opening the furnace door after the temperature in the vacuum brazing furnace is reduced to 20 ℃ at room temperature, and taking out the chromium target and the copper back plate after composite binding.
Example 3
A method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
s1, taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target with the diameter of 300 mm and the thickness of 12mm, trimming and splicing a nickel-based amorphous strip with the thickness of 0.06mm into a size of 38mm, and uniformly paving the nickel-based amorphous strip between the copper back plate and the chromium target;
s2, placing the copper back plate and the chromium target material which are clamped with the nickel-based amorphous ribbon into a vacuum brazing furnace, closing the furnace door, and vacuumizing to 5 x 10-3Pa；
S3, uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure in the furnace, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, uniformly cooling to 20 ℃ within 4h with the temperature in the furnace, and keeping the temperature rise curve as shown in figure 3;
and S4, opening the furnace door after the temperature in the vacuum brazing furnace is reduced to 20 ℃ at room temperature, and taking out the chromium target and the copper back plate after composite binding.
Observing and photographing the appearances of the chromium target and the copper back plate after the composite binding to obtain a picture 4; and separating the chromium target material and the chromium target material by using a cutting machine, and observing and photographing the compounded surface of the chromium target material to obtain a picture 5.
As can be seen from fig. 4, although the chromium target and the copper backing plate can be compositely bonded, the chromium target and the copper backing plate have different expansion coefficients, so that a gap is formed around the chromium target and the copper backing plate after the chromium target and the copper backing plate are compositely bonded.
As can be seen from fig. 5, although the chromium target and the copper backing plate can be compositely bound, bubbles cannot escape because the nickel-based amorphous ribbon solder cannot flow between the chromium target and the copper backing plate after melting, and bubble gaps are generated between the chromium target and the copper backing plate after compositing.
Example 4
A method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
s1, taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target material with the diameter of 300 mm and the thickness of 12mm, cleaning and airing the surfaces of the copper back plate and the chromium target material by adopting ethanol, trimming and splicing a nickel-based amorphous belt with the thickness of 0.08mm into a size with the diameter of 306mm, and uniformly paving the nickel-based amorphous belt between the copper back plate and the chromium target material;
s2, placing the copper back plate and the chromium target material which are clamped with the nickel-based amorphous ribbon into a vacuum brazing furnace, closing the furnace door, and vacuumizing to 5 x 10-3Pa；
S3, uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the temperature of the furnace at positive pressure, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, keeping the temperature for 30min, uniformly cooling to 20 ℃ within 4h along with the temperature of the furnace, and keeping the temperature curve as shown in figure 6;
and S4, opening the furnace door after the temperature in the vacuum brazing furnace is reduced to 20 ℃ at room temperature, and taking out the chromium target and the copper back plate after composite binding.
And observing and photographing the appearances of the chromium target and the copper back plate after the composite binding to obtain a picture 7.
As can be seen from FIG. 7, in the cooling stage, the solder is kept for 30min when not completely solidified, and after the copper backboard expands at 1062 ℃, the extended copper gradually shrinks back, and after the two are combined and bound, no gap is generated around the backboard.
Example 5
A method for compounding a chromium target and a copper back plate for sputtering coating comprises the following steps:
s1, taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target material with the diameter of 300 mm and the thickness of 12mm, cleaning and airing the surfaces of the copper back plate and the chromium target material by adopting ethanol, trimming and splicing a nickel-based amorphous belt with the thickness of 0.08mm into a size with the diameter of 306mm, and uniformly paving the nickel-based amorphous belt between the copper back plate and the chromium target material;
s2, placing the copper back plate and the chromium target material which are clamped with the nickel-based amorphous ribbon into a vacuum brazing furnace, closing the furnace door, and vacuumizing to 5 x 10-3Pa；
S3, uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure in the furnace, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, then heating to 1062 ℃ within 30min, keeping the temperature for 2min, uniformly pumping partial argon to ensure that the vacuum degree in the furnace is 0.002MPa, then cooling to 950 ℃ within 28min, keeping the temperature for 30min, finally uniformly cooling to 20 ℃ within 4h along with the temperature of the furnace, and keeping the temperature curve as shown in FIG. 6;
and S4, opening the furnace door after the temperature in the vacuum brazing furnace is reduced to 20 ℃ at room temperature, and taking out the chromium target and the copper back plate after composite binding.
And observing and photographing the appearances of the chromium target and the copper back plate after the composite binding to obtain a picture 8.
As can be seen from FIG. 8, since the temperature in the furnace is increased to 1062 ℃ and kept for 2min, the positive pressure is applied in the furnace, the fluidity of the content of the nickel-based amorphous band is the best, at this time, the furnace is gradually vacuumized to 0.002MPa, the bubbles in the solder gradually escape, and after the two are compositely bound, the effect is good, and no bubble is generated.
Comparative example
Comparative example 1
Taking a copper back plate with the diameter of 330mm and the thickness of 6mm and a chromium target with the diameter of 300 mm and the thickness of 12mm, carrying out chemical nickel plating treatment on the welding surface of the copper back plate and the chromium target, then carrying out brazing on the treated copper back plate and the chromium target at the temperature of 210 ℃, wherein the solder adopts indium solder.
In the chemical nickel plating treatment, hydrochloric acid with the mass concentration of 11% is adopted for activation for 22s, the pH value of nickel plating is 4.7, the temperature is 88 ℃, the nickel plating time is 32min, and the thickness of the nickel plating layer is 9 mu m. The nickel plating solution is a mixed aqueous solution consisting of SYC300A and SYC300B, the volume ratio of SYC300A to SYC300B is 1:2, and the concentration of nickel ions in the nickel plating solution is 4.5 g/L.
Performance testing
The target assemblies prepared in examples 1 to 5 and comparative example 1 were subjected to temperature resistance tests, respectively.
The test method comprises the following steps: erecting the chromium target and the copper back plate after the compound binding on a vacuum degree of 5 x 10 by adopting a tungsten sheet-3And (3) heating to 165 ℃ in a Pa high-temperature brazing furnace, preserving heat for 10min, observing the separation condition of the target material assembly, heating to 950 ℃ again, preserving heat for 8h, and observing the separation condition of the target material assembly. The test results of each example and comparative example are shown in table 1 below.
Table 1 results of performance testing
Figure BDA0003074527770000071
And (3) testing results: as can be seen from the test results in Table 1, in comparative example 1, indium is used as the intermediate solder, and when the test temperature reaches 165 ℃, the separation phenomenon occurs between the chromium target and the copper back plate, and the melting phenomenon occurs in the indium solder. In examples 1 to 5, a nickel-based amorphous ribbon was used as an intermediate solder, and when the test temperature reached 165 ℃ and the temperature was maintained for 10min, the chromium target did not separate from the copper backing plate and the solder did not melt, and when the test temperature reached 950 ℃ and the temperature was maintained for 8h, the chromium target did not separate from the copper backing plate and the solder did not melt. And the melting point of the nickel-based amorphous ribbon in the first bonding test is 950 ℃, so that in the process of brazing the chromium target and the copper back plate, the nickel-based amorphous ribbon is melted and then bonded with chromium and copper to generate a new alloy, and the melting point of the new alloy is higher than 950 ℃, so that the chromium target and the copper back plate can continuously work at 950 ℃ without off-target after being bonded in a composite manner.
The above description is only a preferred embodiment of the present application, and the protection scope of the present application is not limited to the above embodiments, and all technical solutions belonging to the idea of the present application belong to the protection scope of the present application. It should be noted that several improvements and modifications to the present application without departing from the principles of the present application will occur to those skilled in the art, and such improvements and modifications should also be considered within the scope of the present application.

Claims (6)

1. A method for compounding a chromium target and a copper back plate for sputtering coating is characterized by comprising the following steps:
laying a nickel-based amorphous strip between a chromium target and a copper back plate;
putting the chromium target material and the copper back plate into a brazing furnace, and vacuumizing to 5 x 10-3Pa, brazing;
the melting point of the nickel-based amorphous ribbon is 950 ℃;
the brazing step comprises the following steps: uniformly heating to 500 ℃ within 0.65h, introducing argon, uniformly heating to 800 ℃ within 0.35h, keeping the positive pressure, uniformly heating to 950 ℃ within 1h, keeping the temperature for 30min, then heating to 1062 ℃ within 30min, keeping the temperature for 2min, then cooling to 950 ℃ within 28min, and finally uniformly cooling to room temperature within 4 h.
2. The method of claim 1, wherein the chromium target and the copper backing plate are further subjected to surface cleaning with alcohol before the nickel-based amorphous ribbon is laid.
3. The method for compounding the chromium target and the copper backing plate for sputter coating according to claim 1, wherein the nickel-based amorphous ribbon is cut before being laid, the shape of the nickel-based amorphous ribbon is the same as that of the chromium target, and the chromium target is circular, elliptical, square, triangular or irregular in shape.
4. The method of claim 1, wherein the thickness of the nickel-based amorphous ribbon is 0.04-0.08 mm.
5. The method for compounding the chromium target and the copper backing plate for sputter coating according to claim 1, wherein in the brazing step, after the temperature is reduced to 950 ℃, the temperature is maintained for 30min, and then the temperature is reduced to room temperature.
6. The method for compounding the chromium target and the copper backing plate for sputter coating according to claim 1, wherein in the brazing step, the temperature is raised to 1062 ℃, and part of argon gas is uniformly pumped out within 2min of heat preservation, so that the vacuum degree is 0.002 MPa.
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Citations (8)

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