CN113228261A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN113228261A
CN113228261A CN201880100282.9A CN201880100282A CN113228261A CN 113228261 A CN113228261 A CN 113228261A CN 201880100282 A CN201880100282 A CN 201880100282A CN 113228261 A CN113228261 A CN 113228261A
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semiconductor
semiconductor chip
semiconductor device
insulating film
light
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CN201880100282.9A
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CN113228261B (zh
Inventor
佐藤弘
村上善则
谷泽秀和
佐藤伸二
加藤史树
御田村和宏
高桥佑衣
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Nissan Motor Co Ltd
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Nissan Motor Co Ltd
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

半导体装置具有：半导体芯片(1)，其在内部形成有pn结(13)；不透明的封装树脂(30)，其将半导体芯片(1)的表面覆盖；以及功能区域(15)、(20)，其配置于半导体芯片(1)与封装树脂(30)之间，用于抑制因顺向电流在pn结(13)中流动而产生的、具有使封装树脂(30)劣化的特定波长的光到达封装树脂(30)。

Description

半导体装置
技术领域
本发明涉及具有利用树脂将半导体芯片封装的树脂封装型安装构造的半导体装置。
背景技术
作为晶体管、二极管而起作用的半导体芯片的特性会受到表面的污染、静电的影响。另外，与在半导体芯片的表面配置的电极连接的细金属线在保持原样而露出的状态下对于振动等较弱。因此，通常，例如专利文献1记载的那样，主要利用树脂系的绝缘物对半导体芯片及其周围进行填充封装。
专利文献1：日本特开2013-062540号公报
专利文献2：日本特开2009-099784号公报
非专利文献1：田口常正，“白色LEDによる21世紀のあかり”，照明学会誌，第85卷，第7号，平成13年，p.496-501
非专利文献2：内山直己，“完全ドライプロセスのレーザダイシ
ング技術”，精密工学会誌，第76卷，第7号，2010年，p.747-750
发明内容
如果顺向电流在这种半导体芯片内的pn结中流动，则无论是直接迁移型还是间接迁移型都会产生在原理方面具有与形成pn结的半导体的带隙相当的能量的光。硅(Si)半导体的带隙为1.12eV，砷化镓(GaAs)半导体的带隙为1.43eV，从上述半导体发出的光的波长最短分别为1107nm及867nm，任一者都为红外光。因此，即使产生的光向封装树脂照射也仅产生热。
对此，如今，作为下一代半导体而开始使用的碳化硅(SiC)半导体的带隙在4H型的情况下为3.26eV，氮化镓(GaN)半导体的带隙为3.39eV。上述宽带隙半导体产生的光的波长最短分别为380nm及366nm，这些光是超出可见光的范围的紫外光。
上述紫外光具有将树脂的特定的分子键断开的能力，因此还能够想到各种特性在长期内根据对半导体芯片进行封装的树脂的种类而劣化。例如，关于以利用宽带隙半导体的发光二极管(LED)为光源的发光元件，考虑了如下对策，即，利用荧光物质将紫外光变换为可见光，且防止因未变换的紫外光造成的封装树脂的劣化(参照专利文献2。)。
另一方面，关于利用宽带隙半导体的功率半导体装置，并未考虑针对这种紫外光的应对，以往通过树脂封装而进行封装。其理由如下，即，最初要利用SiC半导体、GaN半导体实现实用化的晶体管为MOSFET等单极型装置，因此在通常的动作中顺向电流未在内部的pn结中流动而未产生紫外光。
然而，本发明的发明人首先发现了如下情况，即，即使在上述单极型装置中，也根据驱动方法的不同而使得顺向电流在内置于装置的寄生pn二极管中流动，频繁地产生紫外光。即，关于利用未留意这一点而设计的封装树脂的安装构造，在半导体芯片和封装树脂的紧贴性等特性方面，有可能因该紫外光而比预想更早劣化。另外，关于意图实现将来的实用化而研究的、基于宽带隙半导体的称为IGBT的双极型装置，在本来的动作时产生紫外光，因此有可能面临同样的问题。而且，与LED的安装构造不同，封装树脂在功率半导体的安装构造中不透明，因此不会使紫外光透过，对所有封装树脂的分子键都造成影响。
鉴于上述问题，本发明的目的在于提供具有能抑制因半导体芯片的pn结中产生的光造成的封装树脂的劣化、且能保证长期可靠性的安装构造的半导体装置。
本发明的一个方式所涉及的半导体装置的主旨在于，在半导体芯片与不透明的封装树脂之间配置有功能区域，该功能区域抑制因半导体芯片的pn结而产生且具有使封装树脂劣化的波长的光到达封装树脂。
发明的效果
根据本发明，能够提供如下半导体装置，其具有能够抑制因在半导体芯片的pn结产生的光导致的封装树脂的劣化、且能够确保长期可靠性的安装构造。
附图说明
图1是表示本发明的第1实施方式所涉及的半导体装置的构造的示意性的剖面图。
图2是表示本发明的第1实施方式所涉及的半导体装置的其他构造的示意性的剖面图。
图3是表示本发明的第1实施方式的第1变形例所涉及的半导体装置的构造的示意性的剖面图。
图4是表示本发明的第1实施方式的第2变形例所涉及的半导体装置的构造的示意性的剖面图。
图5是表示本发明的第1实施方式的第3变形例所涉及的半导体装置的构造的示意性的剖面图。
图6是表示本发明的第2实施方式所涉及的半导体装置的构造的示意性的剖面图。
图7是表示本发明的第3实施方式所涉及的半导体装置的构造的示意性的剖面图。
具体实施方式
下面，参照附图对本发明的实施方式进行说明。在下面的附图的记载中，对相同或相似的部分标注相同或相似的标号。此外，附图是示意性的图，各尺寸、图中的纵横比率等与实际不同。另外，附图彼此间也包含彼此的尺寸关系、比率不同的部分。
(第1实施方式)
图1是本发明的第1实施方式所涉及的半导体装置的示意性的剖面图。附图中，1为半导体芯片，这里，表示特别称为SiC、GaN的与其带隙对应的光的波长相当于紫外光的宽带隙半导体。此外，为了最简便地对本发明进行说明，这里将半导体芯片1设为立式pn二极管芯片。当然，本发明对于MOSFET、双极型晶体管、称为IGBT的半导体芯片也具有同样的效果。半导体芯片1在其基体即n型半导体区域11的表面形成p型半导体区域12而形成pn结13。并且，在背面具有作为阴极的第1主电极101。另外，在表面具有与p型半导体区域12连接的作为阳极的第2主电极102。此外，n型半导体区域11实际上仅在占据大半部分的高浓度区域以及p型半导体区域12的附近由形成为层状的低浓度区域构成，这里为了方便而不加区别地示出。
该半导体芯片1安装于在绝缘性的基板40之上形成的金属制配线上。附图中，第1配线图案41是在基板40的上表面配置的阴极配线。在与基板40的上表面相对的半导体芯片1的主面形成的第1主电极101，利用例如由焊料等金属构成的接合材料50而与第1配线图案41电连接且物理连接。另一方面，第2主电极102与形成于基板40上且和第1配线图案41分离的第2配线图案42之间通过金属线60而电连接。该金属线60例如是以铝为主体的合金，专门通过超声波焊接法而与构成第2主电极102的金属的表面以及构成第2配线图案42的金属的表面接合。
这样安装的构造体为了防止因来自外部的尘埃导致的半导体芯片1的性能劣化、确保金属线60的耐振性而如图1那样由封装树脂30覆盖。这里，封装树脂30通常为以黑色着色且不透明的环氧树脂等。并且，在图1中，在半导体芯片1与封装树脂30之间具有功能绝缘膜20。这是在本说明书的“用于解决问题的方法”这部分称为“功能区域”的一个方式。即，如果顺向电流在由宽带隙半导体构成的半导体芯片1中的pn结13流动，则会射出具有将由此构成封装树脂30的有机物的分子键断开的能力的紫外光(下面成为“生成光”)。作为所述“功能区域”的一种的功能绝缘膜20发挥抑制该分子键破坏的作用。
下面，对功能绝缘膜20的功能进行说明。
例如，作为功能绝缘膜20而利用含有荧光物质的树脂。如果荧光物质接收波长较短的光，则变为具有将其能量的一部分变换为热、且射出长波长的光的性质的物质。因此，作为功能绝缘膜20中含有的荧光物质，选择将半导体芯片1中的pn结13中产生的紫外光变换为对于封装树脂30无伤害的光、例如可见光的物质。这种荧光物质使用紫外LED或蓝色LED，是为了实现发出红光、绿光、黄光的LED、或者组合多种荧光物质射出多种波长的光而实现白色LED元件等而使用的材料。(参照非专利文献1)。
此外，对于功能绝缘膜20的基体选择对于生成光具有耐性的有机物、且如图1所示那样适合于将搭载于基板40的半导体芯片1的整体覆盖的材料。例如，从芳族聚酰亚胺中选择通过喷淋喷雾等而能够以图1那样的均匀的膜厚形成、且难以感应从pn结13发出的紫外光的材料。另外，关于通过紫外光的照射而产生聚合反应的紫外线硬化树脂，在聚合完毕之后持续照射了紫外光的情况下的劣化与其他树脂相比也更轻微，因此能够用作功能绝缘膜20的基体。另外，通常与硅相关的分子键的键合能量高于碳类材料，因此耐热硅等也能够用于功能绝缘膜20的基体。
另外，功能绝缘膜20的膜厚设定为充分大于生成光的波长。至少优选具有波长的数倍的厚度。
如以上说明，关于本发明的第1实施方式所涉及的半导体装置，在半导体芯片1与封装树脂30之间配置有抑制具有使封装树脂30劣化的特定的波长的光到达封装树脂30的功能绝缘膜20。因此，关于图1所示的半导体装置，即使例如由宽带隙半导体构成的半导体芯片1通过其动作而从内部发出紫外光，也能避免封装树脂30劣化或者减轻劣化。因此，在多种特性方面效果显著，在成本方面也将容易使用的当前的树脂用作封装树脂30，且能够以期望的长度确保安装有由宽带隙半导体构成的半导体芯片1的半导体装置的寿命。
但是，关于图1所示的半导体装置，示出了在半导体芯片1的上表面及侧面以大致均匀的厚度而形成有功能绝缘膜20的例子，但功能绝缘膜20并不局限于图1所示的形状。例如，如图2所示，可以将功能绝缘膜20以滴灌之类的液滴形状配置于基板40的上表面(在下面的变形例中也一样。)。
＜第1变形例＞
下面，利用图3对本实施的第1实施方式的第1变形例进行说明。在该图3中，形成为如下结构，即，功能绝缘膜20中含有大量由与构成半导体芯片1的半导体相比而带隙相同或狭窄的半导体构成的微晶粒子210的结构。
微晶粒子210的内部存在大量晶体缺陷，上述晶体缺陷在带隙中形成各种等级。其结果，与上述荧光物质相同地，如果生成光入射至微晶粒子210，则射出波长更长的光。因此，功能绝缘膜20的内部含有大量微晶粒子210而发挥与荧光物质相同的作用。
微晶粒子210的构成物质能使用与半导体芯片1相同的物质。或者，可以使用带隙更狭窄的材料、例如廉价且容易获得的Si的微晶。优选微晶粒子210的粒径充分大于从半导体芯片1产生的光的波长。另外，以使得生成光不照射到微晶粒子210且不从功能绝缘膜20通过的方式设计功能绝缘膜20内的微晶粒子210的密度。优选地，如图3所示，在功能绝缘膜20内形成多层微晶粒子210。
如上所述，利用含有微晶粒子210的功能绝缘膜20，能够获得与图1中说明的效果相同的效果。并且，根据图3的结构，荧光物质并非必不可少，可以灵活运用与半导体芯片1相同种类的半导体的微晶粒子或者廉价的Si等的微晶粒子。当然，功能绝缘膜20可以含有与图1相同的荧光物质。
另外，通常树脂与半导体相比热膨胀系数更大。因此，封装树脂30中含有由半导体构成的微晶粒子210使得因使用时的温度变化而在半导体芯片1与功能绝缘膜20之间产生的热应力缓和。因此，根据抑制由热应力引起的破损的观点，也优选图3所示的结构。
＜第2变形例＞
下面，利用图4对本实施的第1实施方式的第2变形例进行说明。图4是与图1相同的剖面图。图4中，功能绝缘膜20中至少含有由表面反射来自半导体芯片1的紫外光的物质构成的反射粒子220。这里也与图3相同地，以使得从半导体芯片1产生的光不照射到反射粒子220且不从功能绝缘膜20通过的方式将功能绝缘膜20内的反射粒子220的密度，设计为如图4所示那样在功能绝缘膜20内至少形成多层反射粒子220。
作为反射粒子220的构成物质，例如优选使用氧化锌、氧化钛等。其中，这些物质具有导电性，因此绝缘性的功能绝缘膜20的成分必定介于反射粒子220彼此之间。
此外，这里也与第1变形例相同地，在使得生成光不到达封装树脂30的范围内设计反射粒子220的粒径、层叠的厚度。另外，优选反射粒子220的粒径大于生成光的波长。
如上所述，利用含有反射生成光的反射粒子220的功能绝缘膜20，也能够获得不使生成光到达封装树脂30的效果。此外，含有反射粒子220的功能绝缘膜20中还可以含有荧光物质。
＜第3变形例＞
下面，利用图5对本实施的第1实施方式的第3变形例进行说明。图5是将半导体芯片1的附近的功能绝缘膜20的部分放大后的剖面图。图5所示的功能绝缘膜20中含有荧光微粒230，蛍光微粒230由近似球形的粒状基体232、以及将其表面覆盖的荧光物层231构成。
对于粒状基体232，选择具有与功能绝缘膜20相比更高的折射率的材料。由此，如图5中的虚线箭头所示，在生成光L以小角度入射至荧光微粒230的表面时，该生成光L在含有荧光物质的荧光物层231的内部且在界面反射多次而行进。因此，关于含有荧光微粒230的功能绝缘膜20，也能够有效地进行生成光L的波长的变换。
因此，优选地，与具有锐角部分的情况相比，粒状基体232的形状近似为球形。此外，只要粒状基体232的材料是将生成光L吸收而不会显著劣化的材料，则是任意的。此外，粒状基体232的材料可以与微晶粒子210、反射粒子220相同，也可以是其他物质。另外，优选荧光物层231的膜厚大于生成光L的波长。
并且，根据与图3的情况相同的热膨胀系数的观点，粒状基体232的材质优选为热膨胀系数较小的物质，例如混入功率半导体封装的封装树脂中而使用的低热膨胀石英玻璃等。通过形成为这种结构，能够由比图3中说明的微晶粒子210更廉价的材料形成功能区域。
(第2实施方式)
下面，利用图6对本发明的第2实施方式进行说明。图6是与图1相似的半导体装置的剖面图。不同点在于接合材料50在半导体芯片1的侧面且在与功能绝缘膜20之间延伸。
如果针对接合材料50而使用ZnAl材料，则在固态的ZnAl材料熔融时，在大于或等于ZnAl材料的熔点的温度下产生Zn的蒸气并附着于半导体芯片1的侧面。由此，熔融的ZnAl材料蔓延至半导体芯片1的侧面而凝固。其结果，如图6所示，在半导体芯片1的侧面形成有由接合材料50中使用的ZnAl材料构成的金属膜，其具有反射生成光的功能。
(第3实施方式)
下面，利用图7对本发明的第3实施方式进行说明。图7是仅将图1中的半导体芯片1的左侧面附近放大的剖面图。省略对封装树脂30等的说明。图7中示出的“×”符号是在与半导体芯片1的侧壁相邻的非活性区域形成的多晶区域15。这里，“非活性区域”是指在半导体芯片1动作时未变为电流路径的区域、且是在半导体芯片1的反向偏置时不会对耐压性造成影响的区域，具体而言，是指半导体芯片1的侧壁周围部。
该多晶区域15能够使用在称为激光隐形切割的方法中使用的聚光脉冲激光而形成。能够利用聚光脉冲激光在半导体中的任意位置且在局部形成多晶区域(参照非专利文献2)。激光隐形切割的目的在于，使用该技术将大量的缺陷区域形成为带状，并利用较弱的外力对半导体芯片进行切割，在本实施方式中，与图3中述及的微晶粒子210相同地，在半导体芯片1中且在局部形成能发挥与荧光物质相同的作用的晶体缺陷区域。因此，使激光输出汇聚而进一步在局部隔开适当的间隔而形成多层照射激光的区域，由此形成为能避免意外的机械强度劣化、且将从半导体芯片1的内侧射出的紫外光变换为无伤害的光的区域。如果预先在半导体芯片1内形成该多晶区域15，则不需要功能绝缘膜20、或者能够代替其作用的一部分，能够更简便地实现封装树脂30的劣化抑制效果。
(其他实施方式)
关于上述的利用各图说明的实施方式，可以单独实施，也可以同时使用多种技术。另外，如果是权利要求书中记载的范围，则除了这里公开的实施方式以外的实施方式也处于本发明的范畴内。
另外，如上所述，作为半导体芯片1，以宽带隙半导体的二极管芯片为例而反复进行了说明，如果内部包含pn结、且顺向电流能够在此处流动，则例如即使应用于MOSFET、JFET、双极型晶体管、IGBT、晶闸管的安装构造，本发明也能够有效地发挥功能。
工业实用性
本发明的半导体装置能够用于包含制造具有利用树脂将半导体芯片封装的树脂封装型安装构造的半导体装置的制造业的电子仪器产业。
标号的说明
1…半导体芯片
11…n型半导体区域
12…p型半导体区域
13…pn结
14…耗尽层
15…多晶区域
20…功能绝缘膜
30…封装树脂
40…基板
41…第1配线图案
42…第2配线图案
50…接合材料
60…金属线
101…第1主电极
102…第2主电极
210…微晶粒子
220…反射粒子
230…荧光微粒
231…荧光物层
232…粒状基体

Claims (9)

1.一种半导体装置，其特征在于，
所述半导体装置具有：
半导体芯片，其在内部形成有pn结；
不透明的封装树脂，其将所述半导体芯片的表面覆盖；以及
功能区域，其配置于所述半导体芯片与所述封装树脂之间，用于抑制因顺向电流在所述pn结中流动而产生且具有使所述封装树脂劣化的特定波长的光到达所述封装树脂。
2.根据权利要求1所述的半导体装置，其特征在于，
所述功能区域包含配置于所述半导体芯片与所述封装树脂之间的绝缘性的功能绝缘膜。
3.根据权利要求2所述的半导体装置，其特征在于，
所述功能绝缘膜含有将具有所述特定波长的光变换为长波长的光的荧光物质。
4.根据权利要求2所述的半导体装置，其特征在于，
所述功能绝缘膜含有如下荧光微粒，该荧光微粒构成为通过将具有所述特定波长的光变换为长波长的光的荧光物质将与所述功能绝缘膜相比折射率更高的粒状基体的表面覆盖。
5.根据权利要求4所述的半导体装置，其特征在于，
所述粒状基体的热膨胀系数小于所述功能绝缘膜的基体的热膨胀系数。
6.根据权利要求2所述的半导体装置，其特征在于，
所述功能绝缘膜含有与构成所述半导体芯片的半导体相比带隙相同或狭窄的半导体构成的微晶粒子。
7.根据权利要求2所述的半导体装置，其特征在于，
所述功能绝缘膜含有由至少表面对具有所述特定波长的光进行反射的物质构成的反射粒子。
8.根据权利要求1所述的半导体装置，其特征在于，
所述半导体装置还具有：
基板，其搭载所述半导体芯片；以及
接合材料，其由将配置于所述基板的上表面的配线图案、和在与所述基板的所述上表面相对的所述半导体芯片的主面形成的电极电连接的金属构成，
所述接合材料在所述半导体芯片的侧面延伸。
9.根据权利要求1所述的半导体装置，其特征在于，
所述功能区域包含在所述半导体芯片的侧面等处且在非活性区域的局部形成的多个晶体缺陷区域。
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