CN113223937B - Method for detecting volatile formed by baking BARC hot plate - Google Patents
Method for detecting volatile formed by baking BARC hot plate Download PDFInfo
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- CN113223937B CN113223937B CN202110428514.7A CN202110428514A CN113223937B CN 113223937 B CN113223937 B CN 113223937B CN 202110428514 A CN202110428514 A CN 202110428514A CN 113223937 B CN113223937 B CN 113223937B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
The invention discloses a method for detecting volatile matters formed by baking a BARC hot plate, which is used for monitoring a first volatile matter formed by a first BARC material in the baking of the hot plate and comprises the following steps: step one, providing m first monitoring sheets with first BARC materials, and placing each first monitoring sheet on a hot plate of a hot plate baking cavity for primary baking at a first temperature; step two, providing n second monitoring wafers with second BARC materials, placing each second monitoring wafer on a hot plate of the hot plate baking cavity subjected to the step one, and performing secondary baking at a second temperature; thirdly, coating photoresist on each second monitoring sheet to amplify the defect particles; and step four, detecting the amplified defective particles to realize detection of the first volatile matter. The invention can detect the volatile defect formed by baking the BARC hot plate through the online detection equipment, and has simple process and low cost.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for detecting a first volatile substance formed by hot plate baking of a Bottom Anti-Reflective Coating (BARC).
Background
During chip fabrication, the BARC is a coating located between the substrate and the photoresist. Starting from a 248nm wavelength lithography process, BARCs are widely used. The method has the main function of eliminating the standing wave effect so as to ensure the verticality of the side wall of the photoresist and reduce the instability of the photoresist line width measurement; also to separate the photoresist from the substrate to avoid possible poisoning of the substrate to the photoresist.
However, when the BARC is baked after spin coating, the thermal acid generator needs to release acid at high temperature (the baking temperature of the BARC is about 200 ℃ in general), and then the polymer is crosslinked under the action of the acid. The higher the BARC baking temperature, the more volatiles are generated, and the different BARC materials and the different amounts of volatiles are different. After condensation, the volatile matters fall back to the surface of the wafer, and a special defect distribution pattern is formed through the subsequent gluing step. FIG. 1 is a schematic structural diagram of a hot plate baking chamber; a hot plate 102 is arranged in the hot plate baking cavity 101, proximity heating is adopted in fig. 1, and a wafer supporting column is further formed on the surface of the hot plate 102; a wafer 103 is placed on the wafer support posts and a BARC material 104 is coated on the wafer 103. When the BARC material 104 is baked, volatile gas is generated and is exhausted from the exhaust port 106 along the dotted line 105 with arrows, but due to the higher temperature of the volatile gas, the volatile gas is easy to condense on the wall of the hot plate baking chamber 101, such as the top panel, and form a volatile 107, i.e. a condensed liquid structure of the volatile gas; volatiles 107 located on the top panel of the top of the wafer 103 are also prone to fall along arrow lines 108 onto the surface of the wafer 103 during baking to form defect particles.
Typically, BARC processes produce defects having a size of 0.1-0.2 microns, which are difficult to detect with in-line defect inspection equipment and methods, and typically, the wafer undergoes multiple processing steps (e.g., film formation, etching, polishing, etc.) and the defects are magnified before they can be detected. The abnormality can not be found and monitored in time by the online equipment, and the product can be scrapped when the abnormality is serious.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for detecting volatile matters formed by baking a BARC hot plate, which can detect the defect of the volatile matters formed by baking the BARC hot plate through online detection equipment and has simple process and low cost.
In order to solve the technical problem, the method for detecting volatile matters formed by baking the BARC hot plate, which is provided by the invention, is used for monitoring the first volatile matters formed by the first BARC material in the baking of the hot plate, and comprises the following steps:
providing m first monitoring sheets with first BARC materials, placing each first monitoring sheet on a hot plate of a hot plate baking cavity, and baking at a first temperature to generate a first volatile matter in the hot plate baking cavity; the first temperature is a bake process temperature of the first BARC material.
And step two, providing n second monitoring wafers with second BARC materials, placing each second monitoring wafer on the hot plate of the hot plate baking cavity subjected to the step one, and performing second baking at a second temperature, wherein the second temperature is lower than the first temperature, and the first volatile matters are condensed on the surfaces of the second monitoring wafers in the second baking process to form defect particles.
And step three, coating photoresist on each second monitoring sheet, wherein the photoresist wraps the defect particles and amplifies the defect particles.
And step four, detecting the amplified defect particles to realize detection of the first volatile matter.
In a further improvement, the thicker the thickness of the first BARC material, the more the first volatiles, the greater the number of the first monitoring pads, the more the first volatiles, and the adjusting the thickness of the first BARC material and the number of the first monitoring pads to bring the number of the first volatiles above a first desired value.
In a further improvement, the first temperature is 200 ℃ or higher.
In a further refinement, the first temperature is 225 ℃.
In a further improvement, said first BARC material is applied to said first monitor wafer to a thickness of
The above.
In a further improvement, m is 10 or more.
In a further refinement, the thickness of said second BARC material is less than the thickness of said first BARC material;
and step two, controlling the amount of second volatile generated in the second baking in step two below a second required value by setting the thickness of the second BARC material and the second temperature, wherein the second required value is smaller than the first required value, so that the second volatile does not influence the detection of the first volatile.
In a further refinement, the second temperature is 205 ℃.
In a further improvement, said second BARC material coated on said second monitor wafer is
The further improvement is that n is 4-6.
In a further improvement, the photoresist in the third step is KrF photoresist.
In a further improvement, a dark field defect detector is adopted for detection in the fourth step.
In a further improvement, the size of the defect particles formed in step two cannot be detected by the dark field defect detector.
In a further improvement, the defect particles formed in step two have a size of 0.1 to 0.2 microns.
The further improvement is that the hot plate baking cavity is of a single-chip structure, in the step one, each first monitoring wafer is sequentially baked in the hot plate baking cavity for the first time, and in the step two, each second monitoring wafer is sequentially baked in the hot plate baking cavity for the second time.
The invention carries out primary baking through a plurality of first monitoring sheets formed with first BARC materials so as to generate first volatile matters in a hot plate baking cavity, then carries out secondary baking at lower temperature through a plurality of second monitoring sheets formed with second BARC materials so as to condense the first volatile matters on the second monitoring sheets and form defect particles, then coats photoresist on the second monitoring sheets so as to amplify the defect particles, then detects the amplified defect particles, and compared with the defect particles before amplification, the amplified defect particles can directly detect the volatile matter defect formed by baking the BARC hot plate through online detection equipment such as dark field defect detection equipment; in the detection method, defect particle amplification can be realized only by baking for multiple times and adding photoresist coating, and compared with the existing method which needs to adopt the processes of film forming, etching, grinding and the like to realize defect particle amplification, the method has the advantages of simple process and low cost.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic structural diagram of a hot plate baking chamber;
FIG. 2 is a flow chart of a method for detecting volatiles formed by the bake of a BARC hot plate in accordance with an embodiment of the present invention;
FIG. 3 is a defect distribution diagram of volatile defect detection in a prior art method using a dark field defect detection device;
FIG. 4 is a defect distribution diagram of volatile defect inspection using a dark field defect inspection apparatus in a method for inspecting volatile formed by baking a BARC hot plate according to an embodiment of the present invention.
Detailed Description
Referring to FIG. 1, FIG. 2 is a flow chart of a method for detecting volatiles formed during the baking of a BARC hot plate 102 according to an embodiment of the present invention; the method for detecting volatile matters formed by baking the BARC hot plate 102, provided by the embodiment of the invention, is used for monitoring the first volatile matters 107 formed by baking the first BARC material on the hot plate 102, and comprises the following steps:
providing m first monitoring wafers formed with a first BARC material, placing each first monitoring wafer on a hot plate 102 of a hot plate baking cavity 101 to perform first baking at a first temperature so as to generate a first volatile 107 in the hot plate baking cavity 101; the first temperature is a bake process temperature of the first BARC material.
When the first baking is performed, the wafer 103 in fig. 1 is replaced with the first monitoring wafer, and the BARC material 104 is replaced with the first BARC material. It can be seen that during the first baking process, the volatile gas baked out from the first BARC material is exhausted from the exhaust port 106 along the dotted line 105 with arrows, but due to the higher temperature of the volatile gas, the volatile gas hits the wall of the hot plate baking chamber 101 and is liable to condense on the wall of the hot plate baking chamber 101, such as the top panel, and form the first volatile 107; the first volatiles 107 on the top panel on top of the wafer 103 are also prone to fall along arrow lines 108 onto the surface of the wafer 103 during baking to form defect particles.
In the method of the embodiment of the present invention, the first volatile 107 is formed on the wall of the hot plate baking chamber 101 as much as possible by the first step. The thicker the thickness of the first BARC material the more the first volatiles 107, the more the number of the first monitoring sheets the more the first volatiles 107, and the thickness of the first BARC material and the number of the first monitoring sheets are adjusted such that the number of the first volatiles 107 is above the first desired value.
The first temperature is above 200 ℃. Preferably, the first temperature is 225 ℃.
The first BARC material coated on the first monitor wafer has a thickness of
The above.
m is 10 or more, for example, m is 10.
The hot plate baking cavity 101 is of a single-chip structure, and in the first step, each first monitoring chip sequentially performs the first baking in the hot plate baking cavity 101.
Step two, providing n second monitoring wafers with second BARC materials, placing each second monitoring wafer on the hot plate 102 of the hot plate baking cavity 101 subjected to the step one, and performing second baking at a second temperature, wherein the second temperature is lower than the first temperature, and the first volatile matter 107 is condensed on the surfaces of the second monitoring wafers in the second baking process to form defect particles.
The thickness of the second BARC material is less than the thickness of the first BARC material.
In step two, the thickness of the second BARC material and the second temperature are set so that the amount of second volatiles generated during the second bake in step two is controlled below a second desired value, which is less than the first desired value, so that the second volatiles do not affect the detection of the first volatiles 107.
Preferably, the second temperature is 205 ℃.
The second BARC material coated on the second monitoring wafer is
n is 4 to 6.
And the size of the defect particles formed in the second step cannot be detected by the dark field defect detector. And the size of the defect particles formed in the second step is 0.1-0.2 microns.
When the second baking is performed, the wafer 103 in fig. 1 is replaced with the second monitoring wafer, and the BARC material 104 is replaced with the second BARC material. It can be seen that, during the second baking process, the first volatile 107 formed in the first step on the top panel of the wafer 103 is also liable to fall along the arrow line 108 during the baking process to form defect particles on the surface of the wafer 103, i.e. the second monitor wafer.
In the second step, each of the second monitoring wafers is sequentially baked in the hot plate baking cavity 101 for the second time.
And step three, coating photoresist on each second monitoring sheet, wherein the photoresist wraps the defect particles and amplifies the defect particles.
Preferably, the photoresist in the third step is KrF photoresist.
And step four, detecting the amplified defect particles to realize detection of the first volatile matter 107.
And step four, detecting by using a dark field defect detector.
As shown in fig. 4, which is a defect distribution diagram of volatile defect detection performed by dark field defect detection equipment in the method for detecting volatile formed by baking BARC hot plate according to the embodiment of the present invention, it can be seen that fig. 4 is a defect distribution diagram formed by scanning the wafer 103, i.e., the second monitor wafer completing step three in the method according to the embodiment of the present invention, by using dark field defect detection equipment, and a plurality of defect particle patterns 201 are formed on the surface of the wafer pattern 103 b.
For comparison, fig. 3 is a defect distribution diagram of volatile defect detection in a prior art method using a dark field defect detection device; it can be seen that the defect particles cannot be detected on the surface of the wafer pattern 103a in fig. 3.
In the embodiment of the invention, a plurality of first monitoring sheets formed with first BARC materials are baked for the first time to generate a first volatile matter 107 in a hot plate baking cavity 101, then a plurality of second monitoring sheets formed with second BARC materials are baked for the second time at lower temperature to condense the first volatile matter 107 on the second monitoring sheets and form defect particles, then photoresist is coated on the second monitoring sheets to amplify the defect particles, then the amplified defect particles are detected, compared with the defect particles before amplification, the amplified defect particles can directly detect the volatile matter defect formed by baking the hot plate 102 through online detection equipment such as dark field defect detection equipment; in the detection method of the embodiment of the invention, defect particle amplification can be realized only by baking for multiple times and adding photoresist coating, and compared with the existing method which needs to adopt the processes of film forming, etching, grinding and the like to realize defect particle amplification, the method of the embodiment of the invention has the advantages of simple process and low cost.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications can be made by one skilled in the art without departing from the principles of the invention, which should also be considered as the scope of the invention.
Claims (15)
1. A method for detecting volatiles formed during hot plate baking of a BARC, for monitoring a first volatiles formed during hot plate baking of a first BARC material, comprising the steps of:
providing m first monitoring sheets with first BARC materials, placing each first monitoring sheet on a hot plate of a hot plate baking cavity, and baking at a first temperature to generate a first volatile matter in the hot plate baking cavity; the first temperature is the baking process temperature of the first BARC material;
step two, providing n second monitoring wafers with second BARC materials, placing each second monitoring wafer on the hot plate of the hot plate baking cavity subjected to the step one, and performing second baking at a second temperature, wherein the second temperature is lower than the first temperature, and the first volatile matter is condensed on the surfaces of the second monitoring wafers in the second baking process to form defect particles;
thirdly, coating photoresist on each second monitoring piece, wherein the photoresist wraps the defect particles and amplifies the defect particles;
and step four, detecting the amplified defect particles to realize detection of the first volatile matter.
2. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 1, wherein: the thicker the thickness of the first BARC material, the more the first volatiles, the greater the number of the first monitoring pads, the more the first volatiles, and the adjusting the thickness of the first BARC material and the number of the first monitoring pads such that the number of the first volatiles is above a first desired value.
3. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 2, wherein: the first temperature is above 200 ℃.
4. A method for detecting volatiles formed by hot plate bake of a BARC, as recited in claim 3, wherein: the first temperature was 225 ℃.
5. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 2, wherein: the first BARC material coated on the first monitor wafer has a thickness of
The above.
6. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 2, wherein: m is 10 or more.
7. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 1, wherein: the thickness of the second BARC material is less than the thickness of the first BARC material;
and step two, controlling the amount of second volatile generated in the second baking in step two below a second required value by setting the thickness of the second BARC material and the second temperature, wherein the second required value is smaller than the first required value, so that the second volatile does not influence the detection of the first volatile.
8. The method for detecting volatiles formed by baking a BARC hot plate according to claim 4 or 7, wherein: the second temperature was 205 ℃.
9. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 7, wherein: the second BARC material coated on the second monitor wafer has a thickness of
10. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 7, wherein: n is 4 to 6.
11. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 1, wherein: the photoresist in the third step is KrF photoresist.
12. The method for detecting volatiles formed by hot plate bake of a BARC as recited in claim 1, wherein: and step four, detecting by using a dark field defect detector.
13. A method for detecting volatiles formed by hot plate bake of a BARC, as recited in claim 12, wherein: and the size of the defect particles formed in the second step cannot be detected by the dark field defect detector.
14. A method for detecting volatiles formed by hot plate bake of a BARC, as recited in claim 12, wherein: and the size of the defect particles formed in the second step is 0.1-0.2 microns.
15. The method of detecting volatiles formed by BARC hot plate bake of claim 1, wherein: the hot plate baking cavity is of a single-chip structure, in the first step, the first monitoring pieces sequentially bake in the hot plate baking cavity for the first time, and in the second step, the second monitoring pieces sequentially bake in the hot plate baking cavity for the second time.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102087471A (en) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | Method for improving photoetching critical dimension in groove process |
| CN109037402A (en) * | 2018-07-25 | 2018-12-18 | 湘能华磊光电股份有限公司 | The lithographic method of graphical sapphire substrate |
| CN109143786A (en) * | 2018-09-25 | 2019-01-04 | 西安微电子技术研究所 | A method of reducing deep-submicron photoetching process spherical defect |
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| US6680252B2 (en) * | 2001-05-15 | 2004-01-20 | United Microelectronics Corp. | Method for planarizing barc layer in dual damascene process |
| US20040253551A1 (en) * | 2003-03-06 | 2004-12-16 | Tsuyoshi Shibata | Baking apparatus, substrate heat treatment method and semiconductor device manufacturing method for using baking apparatus, pattern forming method and semiconductor device manufacturing method for using pattern forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102087471A (en) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | Method for improving photoetching critical dimension in groove process |
| CN109037402A (en) * | 2018-07-25 | 2018-12-18 | 湘能华磊光电股份有限公司 | The lithographic method of graphical sapphire substrate |
| CN109143786A (en) * | 2018-09-25 | 2019-01-04 | 西安微电子技术研究所 | A method of reducing deep-submicron photoetching process spherical defect |
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