CN113215529B

CN113215529B - Precise mask plate and mask plate assembly

Info

Publication number: CN113215529B
Application number: CN202110483364.XA
Authority: CN
Inventors: 肖志慧; 单为健; 王荣栋
Original assignee: Hefei Visionox Technology Co Ltd
Current assignee: Hefei Visionox Technology Co Ltd
Priority date: 2021-04-30
Filing date: 2021-04-30
Publication date: 2023-05-12
Anticipated expiration: 2041-04-30
Also published as: CN113215529A

Abstract

The application discloses accurate mask plate and mask plate assembly, accurate mask plate includes the mask plate main part, the mask plate main part includes a plurality of evaporation plating openings that are the range distribution and around each evaporation plating opening distribution cover the district, in the arbitrary cross-section of mask plate main part perpendicular to self thickness direction, lie in along the row direction, and/or, along the minimum distance of the cover district between the evaporation plating openings that the row direction is arranged adjacently at least including first minimum distance h1 and second minimum distance h2, h1 is not equal to h2, and along each cross-section in mask plate self thickness direction, the area of the cross-section that corresponds with the great one in first minimum distance h1 and the second minimum distance h2 is great; wherein the columns extend in a second direction when the rows extend in a first direction and the columns extend in the first direction when the rows extend in a second direction, the first direction and the second direction intersecting. The precise mask plate can reduce the risk of wrinkling during net tensioning and improve the evaporation yield.

Description

Precise mask plate and mask plate assembly

Technical Field

The application belongs to the technical field of display equipment, and particularly relates to a precise mask plate and mask plate assembly.

Background

At present, an evaporation coating mode is mainly adopted in the production of an OLED (Organic Light-Emitting Diode) display panel, and in the evaporation coating process, a precision mask plate is required to be adopted to form a film layer such as an R (red) sub-pixel, a G (green) sub-pixel, a B (blue) sub-pixel and the like by evaporation coating so as to ensure that a film material is evaporated at a specified position.

In the precision mask for vapor deposition to form the asymmetrically arranged pixels, since there is a difference in distance between the openings of the asymmetrically arranged pixels, there is a risk of occurrence of wrinkles in the precision mask when the expanded metal is stretched.

Disclosure of Invention

The embodiment of the application provides a precision mask plate and mask plate assembly, and the precision mask plate can reduce the risk of wrinkling during net tensioning and improve the evaporation yield.

In one aspect, the embodiment of the application provides a precision mask plate, which comprises a mask plate main body, wherein the mask plate main body comprises a plurality of evaporation openings distributed in rows and columns and a covering area distributed around each evaporation opening, the minimum distance of the covering area between the evaporation openings adjacently arranged along the row direction is at least a first minimum distance h1 and a second minimum distance h2, h1 is equal to h2 in any section of the mask plate main body vertical to the thickness direction of the mask plate main body, and the area of the section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger in each section along the thickness direction of the mask plate main body;

wherein the columns extend in a second direction when the rows extend in a first direction and the columns extend in the first direction when the rows extend in the second direction, the first and second directions intersecting.

According to one aspect of the application, the evaporation openings in the mask plate main body are distributed in n columns×m rows, in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance between the evaporation openings in the 2i-1 th row and the covering region between the evaporation openings in the 2i-1 th row is a first minimum distance h1, the minimum distance between the evaporation openings in the 2 i-th row and the covering region between the evaporation openings in the 2i+1 th row is a second minimum distance h2, h1 noteq h2, where m and n are integers greater than 1, and 1.ltoreq.i.ltoreq.m-1/2 is an integer.

According to one aspect of the application, the minimum distances of the mask zones between the vapor deposition openings adjacently arranged along the row direction are the first minimum distance h1 or the second minimum distance h2, and h1+.h2.

According to one aspect of the application, in any section of the mask plate main body perpendicular to the thickness direction thereof, among the vapor deposition openings adjacently arranged in the row direction, the minimum distance of the mask region between the vapor deposition opening of the 2j-1 th column and the vapor deposition opening of the 2 j-th column is a first extension distance h1, the minimum distance of the mask region between the vapor deposition opening of the 2 j-th column and the vapor deposition opening of the 2j+1 th column is a second extension distance h2, h1+.h2, 1+.j+.ltoreq.n-1/2 and is an integer, or,

in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a covering zone between the vapor deposition openings of the 2j-1 th row and the vapor deposition openings of the 2j-1 th row is a second extension distance h2, the minimum distance of the covering zone between the vapor deposition openings of the 2 j-th row and the vapor deposition openings of the 2j+1-th row is a first extension distance h1, h1 is not equal to h2, and 1 is not less than j not more than (n-1)/2 and is an integer.

According to one aspect of the application, the mask plate body comprises a vapor plating surface and a glass surface opposite to the vapor plating surface, each vapor plating opening comprises a first half-etching hole and a second half-etching hole which are arranged along the arrangement direction of the glass surface and the vapor plating surface, the first half-etching hole is communicated with the second half-etching hole, the first half-etching hole comprises a first opening positioned on the glass surface, and the second half-etching hole comprises a second opening positioned on the vapor plating surface.

According to one aspect of the application, when the first minimum extension distance h1 is greater than the second minimum extension distance h2, the thickness of the region corresponding to the minimum extension distance h1 in the mask body is greater than the thickness of the region corresponding to the minimum extension distance h2 in the mask body along the thickness direction of the mask body;

when the first minimum extension distance h1 is smaller than the second minimum extension distance h2, the thickness of the region corresponding to the minimum extension distance h1 in the mask body is smaller than the thickness of the region corresponding to the minimum extension distance h2 in the mask body along the thickness direction of the mask body.

According to one aspect of the application, the first half-engraving holes are gradually folded from one end, close to the glass surface, of the mask plate body to one end, far away from the glass surface, of the mask plate body, and the second half-engraving holes are gradually folded from one end, close to the evaporation surface, of the mask plate body to one end, far away from the evaporation surface, of the mask plate body and then are communicated with the first half-engraving holes.

According to one aspect of the application, the mask plate main body is made of iron-nickel alloy.

According to one aspect of the application, the thickness of the mask plate main body is 10-59 μm.

On the other hand, the application provides a mask assembly, including any one of the accurate mask that this application provided in the first aspect.

Compared with the prior art, in the accurate mask plate that this application provided, including the mask plate main part, the mask plate main part includes a plurality of evaporation plating openings and is located the mask zone between the mask plate opening, the evaporation plating opening is arranged along the range direction in the arbitrary cross-section of perpendicular to self thickness direction of mask plate main part, along the range direction, the minimum distance of the mask zone between the adjacent evaporation plating opening includes first minimum distance h1 and second minimum distance h2 at least, namely, in each row, the minimum distance of the mask zone between the evaporation plating openings that is located adjacent row respectively includes first minimum distance h1 and second minimum distance h2, and/or, in each row, the minimum distance of the mask zone that is located between the evaporation plating openings of adjacent row respectively includes first minimum distance h1 and second minimum distance h2, h1 not equal to h2, and in each cross-section along mask plate self thickness direction, the area of the cross-section that corresponds with the greater person in first minimum distance h1 and second minimum distance h2, thereby the large area of cross-section can be in the main part because of the stress concentration ratio is greater, thereby the stress concentration ratio can be improved in the main part can be in the main part and the mask plate, the stress concentration ratio is greatly improved, thereby the stress concentration ratio is greatly reduced in the main part, and the mask plate has been improved, and the stress concentration ratio is greatly reduced in the area.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic top view structure of a first precision mask provided in an embodiment of the present application;

FIG. 2 is a schematic cross-sectional view of A-A of FIG. 1;

fig. 3 is a schematic top view structure of a second precision mask provided in an embodiment of the present application;

fig. 4 is a schematic top view structure of a third precision mask according to an embodiment of the present application

Fig. 5 is a schematic top view structure of a fourth precision mask according to an embodiment of the present application

Fig. 6 is a partial enlarged view of the area B in fig. 2.

In the accompanying drawings:

1-a mask main body; 10-evaporating openings; 11-mask zone; 101-first half-engraving holes; 1011-first opening; 102-second half-engraving holes; 1021-a second opening; 12-glass surface; 13-steaming the surface.

Detailed Description

Features and exemplary embodiments of various aspects of the present application are described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by showing an example of the present application.

It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.

The inventors have found that precision masks for vapor deposition to form asymmetrically arranged pixels present a risk of wrinkling when stretched in a web because: the pixel openings of the pixels which are arranged asymmetrically are different in distance, so that in the precise mask plate for evaporating the pixels which are arranged asymmetrically, a large difference exists in a solid area (Rib) between evaporation openings which are in one-to-one correspondence with the pixels, stress distribution in the precise mask plate is uneven, the stress difference is amplified when the precise mask plate is stressed, the problem of stress concentration occurs in a part of the precise mask plate, the precise mask plate is deformed to generate wrinkles, and therefore evaporation color mixing is generated, and the product yield is seriously affected.

For a better understanding of the present application, a detailed description of the precision mask and mask assembly according to an embodiment of the present application is provided below in conjunction with fig. 1-6.

Referring to fig. 1, 2 and 3, the embodiment of the present application provides a precision mask, including a mask body 1, where the mask body 1 includes a plurality of vapor deposition openings 10 distributed in rows and columns and a mask zone 11 distributed around each vapor deposition opening 10, and in any section of the mask body perpendicular to the thickness direction of the mask body, a minimum distance between mask zones 11 located between vapor deposition openings 10 adjacently arranged in the row direction and/or in the column direction includes at least a first minimum distance h1 and a second minimum distance h2, h1+' h2, and in each section along the thickness direction of the mask body, an area of a section corresponding to a larger one of the first minimum distance h1 and the second minimum distance h2 is larger;

wherein the columns extend in a second direction when the rows extend in a first direction and the columns extend in the first direction when the rows extend in a second direction, the first direction and the second direction intersecting.

In the above-mentioned accurate mask plate that this application provided, including mask plate main part 1, mask plate main part 1 includes a plurality of evaporation plating openings 10 and is located mask plate opening between the cover zone 11, evaporation plating openings 10 arranges along the range direction, in the arbitrary cross-section of mask plate main part perpendicular to self thickness direction, along the range direction, the minimum distance of cover zone 11 between the adjacent evaporation plating openings 10 includes first minimum distance h1 and second minimum distance h2 at least, namely, in each row, the minimum distance of cover zone 11 between the evaporation plating openings 10 that is located adjacent row respectively includes first minimum distance h1 and second minimum distance h2, and/or, in each row, the minimum distance of cover zone 11 that is located between the evaporation plating openings 10 that is located adjacent row respectively includes first minimum distance h1 and second minimum distance h2, h1 not equal to h2, and in each cross-section along mask plate self thickness direction, with first minimum distance h1 and second minimum distance h2 in the relatively big person's that corresponds in the range, thereby the large cross-section of the stress concentration rate can be played in the main part in the area of the mask plate has improved, thereby the stress concentration rate can be played in the main part is more in the area of the mask plate is more than the main part is more influenced by the area, thereby the stress concentration rate is more than the main part is 1, and the stress concentration rate is more in the main part is more than the area is more influenced in the area is more than the main part is more than the area 11.

In a possible implementation manner, referring to fig. 1 and 2, the vapor deposition openings 10 in the mask body 1 are distributed in n columns×m rows, in any section of the mask body perpendicular to the thickness direction thereof, the vapor deposition openings 10 in the 2i-1 row and the masked region 11 between the vapor deposition openings 10 in the 2i row have a first minimum distance h1, and the masked region 11 between the vapor deposition openings 10 in the 2i row and the vapor deposition openings 10 in the 2i+1 row has a second minimum distance h2, h1+.h2, where m and n are integers greater than 1, and 1.ltoreq.i (m-1)/2.

In the above embodiment, i.gtoreq.1, the even numbered row of the 2i th row, the 2i-1 th row and the 2i+1 th row are located in the odd numbered rows on both sides of the 2i th row, in any section of the mask body perpendicular to the thickness direction of the mask body, the vapor deposition openings 10 adjacently arranged in the column direction are located, the masked region 11 between the vapor deposition openings 10 of the 2i-1 th row and the vapor deposition openings 10 of the 2i th row has the first minimum distance h1, the masked region 11 between the vapor deposition openings 10 of the 2i th row and the vapor deposition openings 10 of the 2i+1 th row has the second minimum distance h2, that is, in each section along the thickness direction of the mask body at each column position as shown in fig. 1 and 2, the covering areas 11 between the vapor deposition openings 10 arranged along the column direction are alternately distributed at the first minimum distance h1 and the second minimum distance h2, the h1 and the h2 are unequal, the area of the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger, and the larger cross section area can play a main supporting role because larger stress can be borne, so that the stress transmission is transmitted along the part corresponding to the larger one of the h1 and the h2 in the covering area 11 in the net stretching process, the stress influence on the part corresponding to the smaller one of the h1 and the h2 in the covering area 11 is weakened, the phenomenon of fold caused by the concentration of the net surface stress in the net stretching process can be effectively improved, the vapor deposition color mixing is prevented, and the yield is greatly improved.

Since the columns extend in the second direction y when the rows extend in the first direction x and the columns extend in the first direction x when the rows extend in the second direction y, the first direction and the second direction intersect, in one possible embodiment the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x, in another possible embodiment the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x.

In the above embodiment, when the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x, one possible embodiment is: the minimum distances of the mask zones 11 between the vapor deposition openings 10 adjacently arranged in the row direction are the first minimum distance h1 or the second minimum distance h2, and h1+noteh2, specifically, the first minimum distance h1 may be greater than the second minimum distance h2, or the first minimum distance h1 may be less than the second minimum distance h2.

In a possible implementation manner, the rows extend along the first direction x, the columns extend along the second direction y perpendicular to the first direction x, the vapor deposition openings 10 in the mask plate main body 1 are distributed in n columns×m rows, in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the vapor deposition openings 10 adjacently arranged along the column direction are located, a first minimum distance h1 is formed between the vapor deposition openings 10 of the 2i-1 th row and the vapor deposition openings 10 of the 2 i-th row in a masking zone 11, a second minimum distance h2 is formed between the vapor deposition openings 10 of the 2 i-th row and the vapor deposition openings 10 of the 2i+1-th row in a masking zone 11, wherein m and n are integers greater than 1, 1.ltoreq.i (m-1)/2 are integers, and h1+.h2; the minimum distances of the mask regions 11 between the vapor deposition openings 10 adjacently arranged in the row direction are the second minimum distances h2. Because the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 is larger in each cross section along the thickness direction of the mask plate, the larger cross section area can play a main supporting role because of being capable of bearing larger stress, and in the embodiment, fig. 1 shows a schematic structural diagram when h1> h2, so that the minimum distance between the minimum distances of the shielding areas between adjacent rows of the precision mask plate shown in fig. 1 is the first minimum distance h1 in the process of stretching, the condition that the stress is concentrated in a small range in the process of stretching can be effectively improved, and the probability of wrinkles in the precision mask plate after stretching is reduced; the same applies to the above embodiments when h1 < h2, and the description thereof is omitted.

In another possible implementation manner, the rows extend along the first direction x, the columns extend along the second direction y perpendicular to the first direction x, the vapor deposition openings 10 in the mask plate main body 1 are distributed in n columns×m rows, in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the vapor deposition openings 10 adjacently arranged along the column direction are located, a first minimum distance h1 is formed between the vapor deposition openings 10 of the 2i-1 th row and a covering region 11 between the vapor deposition openings 10 of the 2 i-th row and the vapor deposition openings 10 of the 2i+1-th row, and a second minimum distance h2 is formed between the vapor deposition openings 10 of the 2 i-th row and the covering region 11 between the vapor deposition openings 10 of the 2i+1-th row, wherein m and n are integers greater than 1, 1.ltoreq.i (m-1)/2 are integers, and h1.noteq.h2; the minimum distances of the mask regions 11 between the vapor deposition openings 10 adjacently arranged in the row direction are the first minimum distances h1. Because the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 is larger in each cross section along the thickness direction of the mask plate, the larger cross section area can play a main supporting role because of being capable of bearing larger stress, and fig. 4 shows a schematic structural diagram when h1> h2 in the embodiment, in the process of stretching the mask plate, the stress is mainly transmitted along the position where the minimum distance of the shielding area between the adjacent rows and the adjacent columns is the first minimum distance h1, so that the condition that the stress is concentrated in a small range in the process of stretching the mask plate can be effectively improved, and the probability of wrinkling in the precision mask plate after stretching the mask plate is reduced; the same applies to the above embodiments when h1 < h2, and the description thereof is omitted.

The above-mentioned cases of extending the rows along the first direction x and extending the columns along the second direction y perpendicular to the first direction x in fig. 1 and fig. 4 are illustrated, and the arrangement mode of the evaporation openings 10 is also applicable when the rows extend along the second direction y and the columns extend along the first direction x perpendicular to the second direction y, which is not repeated herein.

When the rows extend in a first direction x and the columns extend in a second direction y perpendicular to the first direction x, another possible embodiment is: the vapor deposition openings 10 in the mask plate main body 1 are distributed in n columns and m rows, in any section of the mask plate main body vertical to the thickness direction of the mask plate main body, the first minimum distance h1 is reserved between the vapor deposition openings 1010 of the 2i-1 th row and the vapor deposition openings 10 of the 2 i-th row in a covering area 11, the second minimum distance h2 is reserved between the vapor deposition openings 10 of the 2 i-th row and the vapor deposition openings 10 of the 2i+1-th row in the covering area 11, and m and n are integers larger than 1, and i is not smaller than 1/2 and is an integer; in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, in the vapor deposition openings 10 adjacently arranged along the row direction, the minimum distance of the covering region 11 between the vapor deposition openings 10 of the 2j-1 th row and the vapor deposition openings 10 of the 2 j-th row is a first extension distance h1, the minimum distance of the covering region 11 between the vapor deposition openings 10 of the 2 j-th row and the vapor deposition openings 10 of the 2j+1 th row is a second extension distance h2, h1 is not equal to h2, and 1 is not less than j nor more than (n-1)/2 and is an integer; fig. 3 shows a schematic structural diagram of the above embodiment when h1> h2, and the same applies to the above embodiment when h1 < h2, which is not repeated herein.

When the rows extend in a first direction x and the columns extend in a second direction y perpendicular to the first direction x, another possible embodiment is: the vapor deposition openings 10 in the mask plate main body 1 are distributed in n columns and m rows, in any section of the mask plate main body vertical to the thickness direction of the mask plate main body, the first minimum distance h1 is reserved in a covering area 11 between the vapor deposition openings 10 of the 2i-1 th row and the vapor deposition openings 10 of the 2 i-th row, the second minimum distance h2 is reserved in the covering area 11 between the vapor deposition openings 10 of the 2 i-th row and the vapor deposition openings 10 of the 2i+1-th row, and m and n are integers larger than 1, and i is not smaller than 1 (m-1)/2 and is an integer; in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, in the vapor deposition openings 10 adjacently arranged along the row direction, the minimum distance of the covering region 11 between the vapor deposition openings 10 of the 2j-1 th row and the vapor deposition openings 10 of the 2 j-th row is a second extension distance h2, the minimum distance of the covering region 11 between the vapor deposition openings 10 of the 2 j-th row and the vapor deposition openings 10 of the 2j+1 th row is a first extension distance h1, h1 is not equal to h2, and 1 is not less than j (n-1)/2 and is an integer; fig. 5 shows a schematic structural diagram when h1> h2 in one of the above embodiments.

In the above two embodiments, in the cross section of the mask body 1 along the thickness direction of the mask body, the masked areas 11 between the adjacent vapor deposition openings 10 arranged along the column direction are alternately distributed with the first minimum distance h1 and the second minimum distance h2, and in the cross section of the mask body 1 along the thickness direction of the mask body at each row position, the masked areas 11 between the adjacent vapor deposition openings 10 arranged along the row direction are alternately distributed with the first minimum distance h1 and the second minimum distance h2, h1 and h2 are not equal, and since the area of the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger in each cross section along the thickness direction of the mask body, the larger cross section area can play a main supporting role because of bearing larger bridge stress, thereby ensuring the strength of the masked areas 11 corresponding to the larger one of the h1 and h2 between the rows and the columns, and transmitting the stress areas 11 as the main stress areas along the masked areas h1 and h2 when the main stress areas 11 are transmitted along the larger one of the mask body.

The above-mentioned embodiments in fig. 3 and fig. 5 are both illustrated by the case that the rows extend along the first direction x and the columns extend along the second direction y perpendicular to the first direction x, and the arrangement manner of the evaporation openings 10 is also applicable when the rows extend along the second direction y and the columns extend along the first direction x perpendicular to the second direction y, which are not repeated herein.

In the above precise mask, when the total number m of rows included is an even number, the first minimum distance h1 between the first row and the second row can be set to be greater than the second minimum distance h2 between the second row and the third row in any section of the mask body perpendicular to the thickness direction of the mask body, so that the total area of the position with greater supporting force in the whole mask area can be increased, the situation that the stress concentration causes wrinkles on the mask body 1 is avoided, and the vapor deposition yield is improved.

In the above precise mask, when the total number n of columns included is an even number, in any section of the mask body perpendicular to the thickness direction of the mask body, the first minimum distance h1 between the first column and the second column is set to be greater than the second minimum distance h2 between the second row and the third row in the vapor plating openings 10 adjacently arranged along the row direction, so that the total area of the position with greater supporting force in the whole mask region can be increased, the situation that the stress concentration causes wrinkles on the mask body 1 is avoided, and the vapor plating yield is improved.

In one possible embodiment, as shown in fig. 6, the mask body 1 includes a vapor deposition surface 13 and a glass surface 12 opposite to the vapor deposition surface 13, each vapor deposition opening 10 includes a first half-etched hole 101 and a second half-etched hole 102 aligned along an alignment direction of the glass surface 12 and the vapor deposition surface 13, the first half-etched hole 101 communicates with the second half-etched hole 102, the first half-etched hole 101 includes a first opening 1011 located on the glass surface 12, and the second half-etched hole 102 includes a second opening 1021 located on the vapor deposition surface 13.

In each of the above possible embodiments, any of the arbitrary cross sections perpendicular to the thickness direction of the mask body 1 may be the glass surface 12, as shown in fig. 2; the vapor deposition surface 13 may be, as shown in fig. 6; or any cross section which is positioned between the deposition surface 13 and the glass surface 12 and is perpendicular to the thickness direction of the mask body 1 itself.

In the above embodiment, the glass surface 12 is the surface of the mask body 1 away from the vapor deposition source, the vapor deposition surface 13 is the surface of the mask body 1 close to the vapor deposition source, each vapor deposition opening 10 is formed by two half etching from the glass surface 12 and the vapor deposition surface 13, and the two half etching processes are adopted to form the vapor deposition opening 10, so that the edge of the formed vapor deposition opening 10 can be ensured to be smoother, the vapor deposition material passing through the vapor deposition opening 10 is not easy to adhere in the vapor deposition opening 10, thereby saving the vapor deposition material, and the vapor deposition effect is better. In one possible embodiment, the first half-engraving hole 101 is gradually folded from one end of the mask body 1 close to the glass surface 12 to one end far away from the glass surface 12, and the second half-engraving hole 102 is communicated with the first half-engraving hole 101 after being gradually folded from one end of the mask body 1 close to the steaming surface 13 to one end far away from the steaming surface 13.

In the above embodiment, the second opening 1021 of the second half-etched hole 102 is sized to cover the first opening 1011 of the first half-etched hole 101, so as to ensure that the vapor deposition material entering from the second half-etched hole 102 can fill the first half-etched hole 101.

In a possible embodiment, when the first minimum distance h1 is greater than the second minimum distance h2, in the evaporation surface 13 perpendicular to the thickness direction of the mask body, h1 is greater than or equal to 2 μm, and h2 is greater than or equal to 0 μm, as shown in fig. 6, a schematic diagram of h2 being equal to 0 μm in the evaporation surface 13; or alternatively, the process may be performed,

when the first minimum distance h1 is smaller than the second minimum distance h2, h2 is greater than or equal to 2 μm and h1 is greater than or equal to 0 μm in the evaporation surface 13.

In the above embodiment, the smaller one of the first minimum distance h1 and the second minimum distance h2 located in the plating surface 13 is made to be 0 μm or more and the larger one is made to be 2 μm or more, so that the material strength of the shielding region corresponding to the larger one is ensured, and the part is used as a stress main transmission bridge, thereby preventing wrinkles from being generated due to uneven stress during the net stretching.

In a possible implementation manner, not only is the shielding area designed to be arranged in a width-to-width manner in the direction perpendicular to the vapor deposition surface 13 and the glass surface 12 of the mask body 1, namely, the shielding area comprises a part corresponding to a first minimum distance h1 and a part corresponding to a second minimum distance h2, h1 and h2 are not equal, but also different manufacturing is performed on the thickness of the mask body 1, the thickness of the area corresponding to the minimum distance h1 in the mask body 1 is set to be greater than or less than the thickness of the area corresponding to the minimum distance h2 in the mask body 1, specifically, as shown in fig. 6, when the first minimum distance h1 is greater than the second minimum distance h2, the thickness of the area corresponding to the first minimum distance h1 in the mask body 1 is greater than the thickness of the area corresponding to the second minimum distance h2 in the mask body 1 along the thickness direction of the mask body 1;

when the first minimum distance h1 is smaller than the second minimum distance h2, the thickness of the region corresponding to the first minimum distance h1 in the mask body 1 is smaller than the thickness of the region corresponding to the second minimum distance h2 in the mask body 1 along the thickness direction of the mask body 1, so that the area of each section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 in the thickness direction of the mask body is larger, the material strength of the shielding region corresponding to the larger one of the h1 and the h2 is ensured, and the part is used as a stress main transmission bridge, and wrinkles caused by uneven stress during the stretching of the net are prevented.

In a feasible implementation mode, the mask plate main body 1 is made of iron-nickel alloy, and the strength of the mask plate is guaranteed by adopting the iron-nickel alloy, meanwhile, the mask plate is convenient to process and manufacture, and on the other hand, the material is simple and easy to obtain and low in cost.

In one possible embodiment, the mask body 1 has a thickness of 10 μm to 59 μm to ensure a good supporting effect when vapor deposition is performed.

The application also provides a mask plate assembly, including, mask plate frame, support bar and this application apply the arbitrary accurate mask plate that provides in the above-mentioned technical scheme, support bar fixed connection is in mask plate frame, and accurate mask plate sets up on the support bar, and with mask plate frame fixed connection.

After the mask plate assembly is used for evaporation, the evaporation yield is greatly improved, the phenomenon of color mixing of evaporation is avoided, the material utilization rate is improved, and the manufacturing cost is saved.

In the foregoing, only the specific embodiments of the present application are described, and it will be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the systems, modules and units described above may refer to the corresponding processes in the foregoing method embodiments, which are not repeated herein. It should be understood that the scope of the present application is not limited thereto, and that any equivalent modifications or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and are intended to be included in the scope of the present application.

It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, the present application is not limited to the order of the above-described steps, that is, the steps may be performed in the order mentioned in the embodiments, may be different from the order in the embodiments, or several steps may be performed simultaneously.

Claims

1. The precise mask plate is characterized by comprising a mask plate main body, wherein the mask plate main body comprises a plurality of evaporation openings distributed in rows and columns and a covering zone distributed around each evaporation opening, the minimum distance of the covering zone between the evaporation openings adjacently distributed along the row direction and/or along the column direction in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body at least comprises a first minimum distance h1 and a second minimum distance h2, h1 is not equal to h2, and the area of the section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 in each section along the thickness direction of the mask plate is larger;

when the first minimum distance h1 is greater than the second minimum distance h2, the thickness of the region corresponding to the first minimum distance h1 in the mask body 1 is greater than the thickness of the region corresponding to the second minimum distance h2 in the mask body 1 along the thickness direction of the mask body 1;

when the first minimum distance h1 is smaller than the second minimum distance h2, the thickness of the region corresponding to the first minimum distance h1 in the mask body 1 is smaller than the thickness of the region corresponding to the second minimum distance h2 in the mask body 1 along the thickness direction of the mask body 1;

2. The precision mask plate according to claim 1, wherein the vapor deposition openings in the mask plate body are distributed in n columns×m rows, and in any section of the mask plate body perpendicular to the thickness direction thereof, the minimum distance between the vapor deposition openings in the 2i-1 th row and the mask region between the vapor deposition openings in the 2i-1 th row is a first minimum distance h1, and the minimum distance between the vapor deposition openings in the 2 i-th row and the mask region between the vapor deposition openings in the 2i+1 th row is a second minimum distance h2, h1+.h2, wherein m and n are integers greater than 1, and 1+.i (m-1)/2 are integers.

3. The precision mask plate according to claim 2, wherein the minimum distances of the mask areas between the vapor deposition openings adjacently arranged in the row direction are each a first minimum distance h1 or a second minimum distance h2, and h1+.h2.

4. The precision mask plate according to claim 2, wherein, in an arbitrary section of the mask plate main body perpendicular to the own thickness direction, a minimum distance of a mask region between vapor deposition openings of a 2j-1 th column and vapor deposition openings of a 2j-1 th column is a first extension distance h1, a minimum distance of a mask region between vapor deposition openings of a 2 j-th column and vapor deposition openings of a 2j+1-th column is a second extension distance h2, h1+.h2, 1+.j+.ltoreq.n-1/2 and is an integer, or,

in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a covering zone between the vapor deposition openings of the 2j-1 th row and the vapor deposition openings of the 2j-1 th row is a second extension distance h2, the minimum distance of the covering zone between the vapor deposition openings of the 2 j-th row and the vapor deposition openings of the 2j+1-th row is a first extension distance h1, h1 is not equal to h2, and 1 is not less than j (n-1)/2 and is an integer.

5. The precision mask plate according to claim 1, wherein the mask plate body comprises a vapor deposition surface and a glass surface opposite to the vapor deposition surface, each vapor deposition opening comprises a first half-etched hole and a second half-etched hole which are arranged along the arrangement direction of the glass surface and the vapor deposition surface, the first half-etched hole is communicated with the second half-etched hole, the first half-etched hole comprises a first opening positioned on the glass surface, and the second half-etched hole comprises a second opening positioned on the vapor deposition surface.

6. The precision mask plate according to claim 5, wherein the first half-engraving hole is gradually folded from one end of the mask plate main body close to the glass surface to one end far away from the glass surface, and the second half-engraving hole is communicated with the first half-engraving hole after being gradually folded from one end of the mask plate main body close to the evaporation surface to one end far away from the evaporation surface.

7. The precision mask plate according to claim 1, wherein the mask plate main body is made of iron-nickel alloy.

8. The precision mask plate according to claim 7, wherein the thickness of the mask plate body is 10 μm to 59 μm.

9. A mask assembly comprising a precision mask as claimed in any one of claims 1 to 8.